3V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
■ LOW VOLTAGE: 3.0V (+0.6V / –0.3V)
■ 128Kb x 8 LOW POWER SRAM with OUTPUT
ENABLE
■ EQUAL CYCLE and ACC ESS TIMES: 70ns
■ LOW V
■ TRI-STATE COMMON I/O
■ LOW ACTIVE and STAN DB Y POWER
■ INTENDED for USE with ST ZEROPOWER
and TIMEKEEPER
DESCRIPTION
The M68Z128W is a 1 Mbit (1,048,576 bi t) Fast
CMOS SRAM, organized as 131,072 words by 8
bits. The device features fully static opera tion requiring no external clocks or timing strobes, with
equal address access and cycle times. It requires
a single 3.0V (+0.6V / –0.3V) supply, and all inputs
and outputs are TTL compatible. This device has
an automatic power-down feature, reducing the
power consumption by over 99% when desel ected. The M68Z128 W is available in the sta ndard
450mil-wide TSOP type 1 package.
DATA RETENTION: 1.4V
CC
®
CONTROLLERS
®
TSOP32 (N)
8 x 20mm
Figure 1. Logic Diagram
V
CC
Table 1. Signal Names
A0-A16Address Inputs
DQ0-DQ7Data Input/Output
E1
E2Chip Enable 2
G
W
V
CC
V
SS
NCNot Connected Internally
Chip Enable 1
Output Enable
Write Enable
Supply Voltage
Ground
A0-A16
W
E1
E2
17
M68Z128W
G
V
SS
8
DQ0-DQ7
AI01878B
1/12March 2000
Page 2
M68Z128W
Table 2. Absolute Maximum Ratings
SymbolParameterValueUnit
T
A
T
STG
(2)
V
IO
V
CC
(3)
I
O
P
D
Note: 1. Except for the ratin g " Operati ng Temperat ure Range" , stresses above th ose listed i n the Tab l e "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indi cated in the Operating sections of this s pecification is not i mplied. Exposu re to Ab solute Ma xi m um Rati ng conditions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ity docum en ts .
2. Up to a m aximum op erating V
3. One out put at a time, not to exceed 1 s econd durat i on.
Ambient Operating Temperature
Storage Temperature–65 to 150 °C
Input or Output Voltage
Supply Voltage–0.5 to 4.6V
Output Current20mA
Power Dissipation1W
of 3.6V only.
CC
Figure 2. TSOP Connection s
(1)
0 to 70°C
–0.5 to V
CC
+ 0.5
V
the 1,048,576 locations in the static memory array,
specified by the 17 address inputs. Val id dat a wi ll
be available at the eight output pins within t
AVQV
after the last stable address, providing G is Low,
is Low and E2 is High. If Chip Enable or Output
A11G
1
A9
A8
A13
W
E2
A15
V
CC
NC
8
9
M68Z128W
A16
A14
A12
A7
A6
A5
A4A3
1617
32
25
24
AI00698B
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
V
SS
DQ2
DQ1
DQ0
A0
A1
A2
READ MODE
The M68Z128W is in the Read mode whenever
Write Ena ble (W
Low, and both Chip Enables (E1
) is High with Output Enable (G)
and E2) are as-
serted. This provides acc ess to dat a fr om eight of
E1
Enable access times are not met, data access will
be measured from the limiting parameter (t
E2HQV
, or t
t
may be indeterminate at t
) rather than the address. Data out
GLQV
E1LQX
, t
E2HQX
but data lines will always be valid at t
and t
AVQV
E1LQV
GLQX
.
WRITE MODE
The M68Z128W is in the Write mode whenever
and E1 pins are Lo w, with E2 High. Either
the W
the Chip Enable input s (E1
Enable input (W
) must be de-asserted during Ad-
and E2) or the Write
dress transitions for subsequent write cycles.
Write begins with the concurrence of both Chip
Enables being active with W
low. Therefore, address setup time is r eferenced to Write Enable and
both Chip Enables as t
AVWL
, t
AVE1L
and t
AVE2H
respectively, and is determined by the latter occurring edge.
The Write cycle can be terminated by the earlier
rising edge of E1
If the Output is enabled (E1
= Low), then W will return the outputs to high im-
G
pedance within t
, W, or the falling edge of E2.
= Low, E2 = High and
of its falling edge. Care must
WLQZ
be taken to avoid bus contention in this type of operation. Data input must be valid for t
the rising edge of Write E nable, o r for t
fore the rising edge of E1
or for t
DVE2L
before
DVWH
DVE1H
before the
be-
falling edge of E2, whi chever occurs f irst, and remain v a lid for t
WHDX
, t
E1HDX
or t
E2LDX
.
,
,
2/12
Page 3
Table 3. Operating Modes
OperationE1E2WGDQ0-DQ7Power
Read
Read
Write
Deselect
DeselectX
Note: 1. X = VIH or VIL.
V
IL
V
IL
V
IL
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
XX
V
IL
X
V
IH
V
IL
X
Data Output
Data InputActive
X
X
Hi-ZActive
Hi-ZStandby
Hi-ZStandby
M68Z128W
Active
Table 4. AC Measurement Conditions
Input Rise and Fall Times≤ 15ns
Input Pulse Voltages0 to 3V
Input and Output Timing Ref. Voltages1.5V
Note: O ut put H i-Z is defin ed as t he poi nt w here da ta is no lo nger
driven.
OPERATIONAL MODE
The M68Z128W has a Chip Enable power down
feature which invokes an automatic standby mode
whenever either Chip Enable is de-asserted (E1
High or E2 = Low). An Output Enable (G
=
) signal
provides a high speed tri-state control, allowing
fast read/write cycles to be achieved with the common I/O data bu s. Operational mo des are determined by device control inputs W
, E1, and E2 as
summarized in the Operating Modes table.
Table 5. Capacitance
SymbolParameter
C
IN
(2)
C
OUT
Note: 1. Sampled only, not 100% tested.
2. Outputs deselected.
(1)
(TA = 25 °C, f = 1 MHz)
Input Capacitance on all pins (except DQ)
Output Capacitance
Figure 3. AC Testing Load Circuit
3.3V
1213Ω
DEVICE
UNDER
TEST
1378Ω
CL includes JIG capacitance
Test
Condition
V
= 0V
IN
V
= 0V
OUT
MinMaxUnit
CL = 50pF or 5pF
6pF
8pF
OUT
AI00697
3/12
Page 4
M68Z128W
Figure 4. Block Diagram
A
A
CHIP ENABLE.
(9)
ROW
DECODER
MEMORY
ARRAY
V
CC
V
SS
E1
E2
DQ
(8)
DQ
CHIP
ENABLE
W
G
INPUT
DATA
CTRL
CHIP ENABLE.
I/O CIRCUITS
COLUMN
DECODER
(8)
AA
AI00665
Table 6. DC Characteristics
(T
= 0 to 70°C; VCC = 3.0V + 0.6V / –0.3V)
A
SymbolParameterTest ConditionMinTypMaxUnit
I
Input Leakage Current
LI
I
I
CC1
I
CC2
I
CC3
V
V
V
V
Note: 1. Average AC current, Ou tputs open, c ycling at t
Output Leakage Current
LO
(1)
Supply Current
(2)
Supply Current (Standby) TTL
(3)
Supply Current (Standby) CMOS
Input Low Voltage–0.50.8V
IL
Input High Voltage2
IH
Output Low Voltage
OL
Output High Voltage
OH
2. All other Inputs at V
3. All other Inputs at V
≤ 0.8V or VIH ≥ 2.0V.
IL
≤ 0.2V or VIH ≥ VCC –0.2V.
IL
0V ≤ V
0V
V
V
CC
= 3.6V , E1 ≥ V
V
CC
or E2 ≤ 0.2V, f =0
minimum.
AVAV
≤ V
IN
CC
≤ V
≤ V
OUT
= 3.6V, (-70)
CC
CC
= 3.6V, E1 = VIH or
E2 = V
I
I
= 2.1mA
OL
= –1mA
OH
IL
, f =0
CC
– 0.2V
±1µA
±1µA
2040mA
15300µA
0.415µA
V
+ 0.5
CC
0.4V
2.4V
V
4/12
Page 5
M68Z128W
Table 7. Read and Standby Modes AC Characteristics
(TA = 0 to 70°C; VCC = 3.0V + 0.6V / –0.3V)
SymbolParameter
t
AVAV
t
AVQV
t
E1LQV
t
E2HQV
t
GLQV
t
E1LQX
t
E2HQX
t
GLQX
t
E1HQZ
t
E2LQZ
t
GHQZ
t
AXQX
t
PU
t
PD
Note: 1. CL = 50pF (see Figure 3).
2. C
3. At any given temperature and voltage condition, t
Read Cycle Time70ns
(1)
Address Valid to Output Valid70ns
(1)
Chip Enable 1 Low to Output Valid70ns
(1)
Chip Enable 2 High to Output Valid70ns
(1)
Output Enable Low to Output Valid35ns
(3)
Chip Enable 1 Low to Output Transition10ns
(3)
Chip Enable 2 High to Output Transition10ns
(3)
Output Enable Low to Output Transition10ns
(2,3)
Chip Enable 1 High to Output Hi-Z025ns
(2,3)
Chip Enable 2 Low to Output Hi-Z025ns
(2,3)
Output Enable High to Output Hi-Z025ns
(1)
Address Transition to Output Transition10ns
Chip Enable 1 Low or Chip Enable 2 High to Power Up0ns
Chip Enable 1 High or Chip Enable 2 Low to Power Down70ns
= 5pF (see Figure 3).
L
given devic e.
EIHQZ
+ t
EZHQZ
is less than t
EILQX
and t
M68Z128W
MinMax
, t
EZLQX
is less than t
GHQZ
GLQX
Unit-70
for any
Figure 5. Address Controlled, Read Mode AC Waveforms
tAVAV
A0-A16
tAVQVtAXQX
DQ0-DQ7
Note: E1 = Low, E2 = High, G = Low, W = High.
VALID
DATA VALID
AI01078
5/12
Page 6
M68Z128W
Figure 6. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms.
tAVAV
A0-A16
E1
E2
G
DQ0-DQ7
Note: Write Enable (W) = High.
VALID
tAVQVtAXQX
tE1LQV
tE1LQX
tE2HQV
tE2HQX
tGLQX
tGLQV
tGHQZ
VALID
tE1HQZ
tE2LQZ
AI00805
Figure 7. Standby Mode AC Waveforms
E1
E2
I
CC1
I
CC2
tPU
50%
tPD
AI00806B
6/12
Page 7
Table 8. Write Mode AC Characteristics
(T
= 0 to 70°C; VCC = 3.0V + 0.6V / –0.3V)
A
M68Z128W
M68Z128WUnit
SymbolParameter
t
AVAV
t
AVWL
t
AVWH
t
AVE1H
t
AVE2L
t
WLWH
t
WHAX
t
WHDX
t
WHQX
t
WLQZ
t
AVE1L
t
AVE2H
t
E1LE1H
t
E2HE2L
t
E1HAX
t
E2LAX
t
DVWH
t
DVE1H
t
DVE2L
Note: 1. CL = 5pF.
2. At any gi ven temperature and voltage condition, t
Write Cycle Time70ns
Address Valid to Write Enable Low0ns
Address Valid to Write Enable High60ns
Address Valid to Chip Enable 1 High60ns
Address Valid to Chip Enable 2 Low60ns
Write Enable Pulse Width 55ns
Write Enable High to Address Transition0ns
Write Enable High to Input Transition0ns
(2)
Write Enable High to Output Transition0ns
(1,2)
Write Enable Low to Output Hi-Z25ns
Address Valid to Chip Enable 1 Low0ns
Address Valid to Chip Enable 2 High0ns
Chip Enable 1 Low to Chip Enable 1 High60ns
Chip Enable 2 High to Chip Enable 2 Low60ns
Chip Enable 1 High to Address Transition0ns
Chip Enable 2 Low to Address Transition0ns
Input Valid to Write Enable High30ns
Input Valid to Chip Enable 1 High30ns
Input Valid to Chip Enable 2 Low30ns
WHQX
is less than t
for any given device.
WLQZ
-70
MinMax
7/12
Page 8
M68Z128W
Figure 8. Write Enable Controlled, Write AC Waveforms
tAVAV
A0-A16
tAVE1L
E1
tAVE2H
E2
tAVWL
W
tWLQZ
DQ0-DQ7
Note: Output E nable (G) = Low.
VALID
tAVWH
tWLWH
Figure 9. Chip Enable Controlled, Write AC Waveforms
tDVWH
(1,2)
tWHAX
tWHQX
tWHDX
DATA INPUT
AI00807
A0-A16
E1
E2
W
DQ0-DQ7
Note: 1. Output Enable (G) = High.
goes High or E2 goes Low si m ul t aneously wi th W high, th e out put remains in a high-impedance st ate.
2. If E1
tAVAV
VALID
tAVE1H
tAVE1L
tAVE2HtE2HE2L
tAVWL
tE1LE1H
tAVE2L
tDVE1H
tDVE2L
tE1HAX
tE2LAX
tE1HDX
tE2LDX
DATA INPUT
AI00808
8/12
Page 9
M68Z128W
Table 9. Low VCC Data Retention Characteristics
(T
= 0 to 70°C)
A
SymbolParameterTest ConditionMinTypMaxUnit
V
= 3V, E1 ≥ V
E1
E1
CC
E2 ≤ 0.2V, f = 0
≥ V
– 0.2V, E2 ≤ 0.2V, f= 0
CC
≥ V
– 0.2V, E2 ≤ 0.2V, f=0
CC
(1)
I
CCDR
V
DR
t
CDR
t
R
Note: 1. All other Inputs at VIH ≥ V
Supply Current (Data Retention)
(1)
Supply Voltage (Data Retention)
(1,2)
Chip Disable to Power Down
(2)
Operation Recovery Time
– 0.2V or VIL ≤ 0.2V .
2. See Fi gure 10 for m easuremen t p oi nts. Guara nteed but not tested.
CC
Figure 10. Low VCC Data Retention AC Waveforms
– 0.2V,
CC
t
is Read cycl e time.
AVAV
0.012µA
1.4V
0ns
t
AVAV
ns
3.6V
VCC 3V
V
> 1.4V
DR
E1 2.2V
E2 0.8V
tCDR
DATA RETENTION MODE
E1 ≥ V
– 0.2V
DR
E2 ≤ 0.2V
tR
AI00664
9/12
Page 10
M68Z128W
Table 10. Ordering Information Scheme
Example:M68Z128W-70 N1T
Device Type
M68Z
Device Function
128 = 1 Mbit (128Kb x8)
Operating Voltage
W = 3V +0.6/–0.3V
Speed
-70 = 70 ns
Package
N = TSOP32 type 1 (8 x 20mm)
Temperature Range
1 = 0 to 70 °C
Shipping Method
T = Tape & Reel Packing
For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 11. Revision History
DateRevision Details
November 1999First Issue
03/20/00TSOP32 Package Mechanical Data changed (Table 12)
10/12
Page 11
M68Z128W
Table 12. TSOP32 (Type I) - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Mechanical Data
Figure 11. TSOP32 (Type I) - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1α
11/12
Page 12
M68Z128W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or o therwise under any patent or patent ri ghts of ST M i croelectr onics. Sp ecifications menti oned in th i s publicati on ar e subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as c ri t i cal components in life support dev i ces or systems wi thout exp ress written approval of STM i croelectronics.
The ST log o i s registered tradem ark of STMicroelectronics
2000 STMicroel e ctronics - All Ri ghts Reserved
All other names are the property of their resp ective owners.
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Singapor e - Spain - Sweden - Switz erl and - Unit ed Kingdom - U.S.A.
STMicroelect ro n ics GRO UP OF COMPANI ES
http://www.st.com
12/12
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