Datasheet M68Z128W Datasheet (SGS Thomson Microelectronics)

Page 1
M68Z128W
3V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
LOW VOLTAGE: 3.0V (+0.6V / –0.3V)
128Kb x 8 LOW POWER SRAM with OUTPUT
ENABLE
EQUAL CYCLE and ACC ESS TIMES: 70ns
LOW V
TRI-STATE COMMON I/O
LOW ACTIVE and STAN DB Y POWER
INTENDED for USE with ST ZEROPOWER
and TIMEKEEPER
DESCRIPTION
The M68Z128W is a 1 Mbit (1,048,576 bi t) Fast CMOS SRAM, organized as 131,072 words by 8 bits. The device features fully static opera tion re­quiring no external clocks or timing strobes, with equal address access and cycle times. It requires
a single 3.0V (+0.6V / –0.3V) supply, and all inputs and outputs are TTL compatible. This device has an automatic power-down feature, reducing the power consumption by over 99% when desel ect­ed. The M68Z128 W is available in the sta ndard 450mil-wide TSOP type 1 package.
DATA RETENTION: 1.4V
®
CONTROLLERS
®
TSOP32 (N)
8 x 20mm
Figure 1. Logic Diagram
V
CC
Table 1. Signal Names
A0-A16 Address Inputs DQ0-DQ7 Data Input/Output
E1 E2 Chip Enable 2
G
W V
CC
V
SS
NC Not Connected Internally
Chip Enable 1
Output Enable
Write Enable
Supply Voltage
Ground
A0-A16
W
E1
E2
17
M68Z128W
G
V
SS
8
DQ0-DQ7
AI01878B
1/12March 2000
Page 2
M68Z128W
Table 2. Absolute Maximum Ratings
Symbol Parameter Value Unit
T
A
T
STG
(2)
V
IO
V
CC
(3)
I
O
P
D
Note: 1. Except for the ratin g " Operati ng Temperat ure Range" , stresses above th ose listed i n the Tab l e "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indi cated in the Operating sections of this s pecification is not i mplied. Exposu re to Ab solute Ma xi m um Rati ng condi­tions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ­ity docum en ts .
2. Up to a m aximum op erating V
3. One out put at a time, not to exceed 1 s econd durat i on.
Ambient Operating Temperature
Storage Temperature –65 to 150 °C Input or Output Voltage Supply Voltage –0.5 to 4.6 V Output Current 20 mA Power Dissipation 1 W
of 3.6V only.
CC
Figure 2. TSOP Connection s
(1)
0 to 70 °C
–0.5 to V
CC
+ 0.5
V
the 1,048,576 locations in the static memory array, specified by the 17 address inputs. Val id dat a wi ll be available at the eight output pins within t
AVQV
after the last stable address, providing G is Low,
is Low and E2 is High. If Chip Enable or Output
A11 G
1 A9 A8
A13
W
E2
A15
V
CC NC
8
9
M68Z128W
A16 A14 A12
A7 A6 A5 A4 A3
16 17
32
25 24
AI00698B
A10 E1 DQ7 DQ6 DQ5 DQ4 DQ3 V
SS
DQ2 DQ1 DQ0 A0 A1 A2
READ MODE
The M68Z128W is in the Read mode whenever Write Ena ble (W Low, and both Chip Enables (E1
) is High with Output Enable (G)
and E2) are as-
serted. This provides acc ess to dat a fr om eight of
E1 Enable access times are not met, data access will be measured from the limiting parameter (t
E2HQV
, or t
t may be indeterminate at t
) rather than the address. Data out
GLQV
E1LQX
, t
E2HQX
but data lines will always be valid at t
and t
AVQV
E1LQV
GLQX
.
WRITE MODE
The M68Z128W is in the Write mode whenever
and E1 pins are Lo w, with E2 High. Either
the W the Chip Enable input s (E1 Enable input (W
) must be de-asserted during Ad-
and E2) or the Write
dress transitions for subsequent write cycles. Write begins with the concurrence of both Chip Enables being active with W
low. Therefore, ad­dress setup time is r eferenced to Write Enable and both Chip Enables as t
AVWL
, t
AVE1L
and t
AVE2H
re­spectively, and is determined by the latter occur­ring edge.
The Write cycle can be terminated by the earlier rising edge of E1
If the Output is enabled (E1
= Low), then W will return the outputs to high im-
G pedance within t
, W, or the falling edge of E2.
= Low, E2 = High and
of its falling edge. Care must
WLQZ
be taken to avoid bus contention in this type of op­eration. Data input must be valid for t the rising edge of Write E nable, o r for t fore the rising edge of E1
or for t
DVE2L
before
DVWH
DVE1H
before the
be-
falling edge of E2, whi chever occurs f irst, and re­main v a lid for t
WHDX
, t
E1HDX
or t
E2LDX
.
, ,
2/12
Page 3
Table 3. Operating Modes
Operation E1 E2 W G DQ0-DQ7 Power
Read Read Write Deselect Deselect X
Note: 1. X = VIH or VIL.
V
IL
V
IL
V
IL
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
XX
V
IL
X
V
IH
V
IL
X
Data Output
Data Input Active X X
Hi-Z Active
Hi-Z Standby Hi-Z Standby
M68Z128W
Active
Table 4. AC Measurement Conditions
Input Rise and Fall Times 15ns Input Pulse Voltages 0 to 3V Input and Output Timing Ref. Voltages 1.5V
Note: O ut put H i-Z is defin ed as t he poi nt w here da ta is no lo nger
driven.
OPERATIONAL MODE
The M68Z128W has a Chip Enable power down feature which invokes an automatic standby mode whenever either Chip Enable is de-asserted (E1 High or E2 = Low). An Output Enable (G
=
) signal provides a high speed tri-state control, allowing fast read/write cycles to be achieved with the com­mon I/O data bu s. Operational mo des are deter­mined by device control inputs W
, E1, and E2 as
summarized in the Operating Modes table.
Table 5. Capacitance
Symbol Parameter
C
IN
(2)
C
OUT
Note: 1. Sampled only, not 100% tested.
2. Outputs deselected.
(1)
(TA = 25 °C, f = 1 MHz)
Input Capacitance on all pins (except DQ) Output Capacitance
Figure 3. AC Testing Load Circuit
3.3V
1213
DEVICE UNDER
TEST
1378
CL includes JIG capacitance
Test
Condition
V
= 0V
IN
V
= 0V
OUT
Min Max Unit
CL = 50pF or 5pF
6pF 8pF
OUT
AI00697
3/12
Page 4
M68Z128W
Figure 4. Block Diagram
A
A
CHIP ENABLE.
(9)
ROW
DECODER
MEMORY
ARRAY
V
CC
V
SS
E1 E2
DQ
(8)
DQ
CHIP
ENABLE
W
G
INPUT
DATA CTRL
CHIP ENABLE.
I/O CIRCUITS
COLUMN
DECODER
(8)
A A
AI00665
Table 6. DC Characteristics
(T
= 0 to 70°C; VCC = 3.0V + 0.6V / –0.3V)
A
Symbol Parameter Test Condition Min Typ Max Unit
I
Input Leakage Current
LI
I
I
CC1
I
CC2
I
CC3
V
V V V
Note: 1. Average AC current, Ou tputs open, c ycling at t
Output Leakage Current
LO
(1)
Supply Current
(2)
Supply Current (Standby) TTL
(3)
Supply Current (Standby) CMOS Input Low Voltage –0.5 0.8 V
IL
Input High Voltage 2
IH
Output Low Voltage
OL
Output High Voltage
OH
2. All other Inputs at V
3. All other Inputs at V
0.8V or VIH 2.0V.
IL
0.2V or VIH VCC –0.2V.
IL
0V V
0V
V
V
CC
= 3.6V , E1 V
V
CC
or E2 0.2V, f =0
minimum.
AVAV
V
IN
CC
V
≤ V
OUT
= 3.6V, (-70)
CC
CC
= 3.6V, E1 = VIH or E2 = V
I I
= 2.1mA
OL
= –1mA
OH
IL
, f =0
CC
– 0.2V
±1 µA ±1 µA
20 40 mA 15 300 µA
0.4 15 µA
V
+ 0.5
CC
0.4 V
2.4 V
V
4/12
Page 5
M68Z128W
Table 7. Read and Standby Modes AC Characteristics (TA = 0 to 70°C; VCC = 3.0V + 0.6V / –0.3V)
Symbol Parameter
t
AVAV
t
AVQV
t
E1LQV
t
E2HQV
t
GLQV
t
E1LQX
t
E2HQX
t
GLQX
t
E1HQZ
t
E2LQZ
t
GHQZ
t
AXQX
t
PU
t
PD
Note: 1. CL = 50pF (see Figure 3).
2. C
3. At any given temperature and voltage condition, t
Read Cycle Time 70 ns
(1)
Address Valid to Output Valid 70 ns
(1)
Chip Enable 1 Low to Output Valid 70 ns
(1)
Chip Enable 2 High to Output Valid 70 ns
(1)
Output Enable Low to Output Valid 35 ns
(3)
Chip Enable 1 Low to Output Transition 10 ns
(3)
Chip Enable 2 High to Output Transition 10 ns
(3)
Output Enable Low to Output Transition 10 ns
(2,3)
Chip Enable 1 High to Output Hi-Z 0 25 ns
(2,3)
Chip Enable 2 Low to Output Hi-Z 0 25 ns
(2,3)
Output Enable High to Output Hi-Z 0 25 ns
(1)
Address Transition to Output Transition 10 ns Chip Enable 1 Low or Chip Enable 2 High to Power Up 0 ns
Chip Enable 1 High or Chip Enable 2 Low to Power Down 70 ns
= 5pF (see Figure 3).
L
given devic e.
EIHQZ
+ t
EZHQZ
is less than t
EILQX
and t
M68Z128W
Min Max
, t
EZLQX
is less than t
GHQZ
GLQX
Unit-70
for any
Figure 5. Address Controlled, Read Mode AC Waveforms
tAVAV
A0-A16
tAVQV tAXQX
DQ0-DQ7
Note: E1 = Low, E2 = High, G = Low, W = High.
VALID
DATA VALID
AI01078
5/12
Page 6
M68Z128W
Figure 6. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms.
tAVAV
A0-A16
E1
E2
G
DQ0-DQ7
Note: Write Enable (W) = High.
VALID
tAVQV tAXQX
tE1LQV
tE1LQX
tE2HQV
tE2HQX
tGLQX
tGLQV
tGHQZ
VALID
tE1HQZ
tE2LQZ
AI00805
Figure 7. Standby Mode AC Waveforms
E1
E2
I
CC1
I
CC2
tPU
50%
tPD
AI00806B
6/12
Page 7
Table 8. Write Mode AC Characteristics
(T
= 0 to 70°C; VCC = 3.0V + 0.6V / –0.3V)
A
M68Z128W
M68Z128W Unit
Symbol Parameter
t
AVAV
t
AVWL
t
AVWH
t
AVE1H
t
AVE2L
t
WLWH
t
WHAX
t
WHDX
t
WHQX
t
WLQZ
t
AVE1L
t
AVE2H
t
E1LE1H
t
E2HE2L
t
E1HAX
t
E2LAX
t
DVWH
t
DVE1H
t
DVE2L
Note: 1. CL = 5pF.
2. At any gi ven temperature and voltage condition, t
Write Cycle Time 70 ns Address Valid to Write Enable Low 0 ns Address Valid to Write Enable High 60 ns Address Valid to Chip Enable 1 High 60 ns Address Valid to Chip Enable 2 Low 60 ns Write Enable Pulse Width 55 ns Write Enable High to Address Transition 0 ns Write Enable High to Input Transition 0 ns
(2)
Write Enable High to Output Transition 0 ns
(1,2)
Write Enable Low to Output Hi-Z 25 ns Address Valid to Chip Enable 1 Low 0 ns
Address Valid to Chip Enable 2 High 0 ns Chip Enable 1 Low to Chip Enable 1 High 60 ns Chip Enable 2 High to Chip Enable 2 Low 60 ns Chip Enable 1 High to Address Transition 0 ns Chip Enable 2 Low to Address Transition 0 ns Input Valid to Write Enable High 30 ns Input Valid to Chip Enable 1 High 30 ns Input Valid to Chip Enable 2 Low 30 ns
WHQX
is less than t
for any given device.
WLQZ
-70
Min Max
7/12
Page 8
M68Z128W
Figure 8. Write Enable Controlled, Write AC Waveforms
tAVAV
A0-A16
tAVE1L
E1
tAVE2H
E2
tAVWL
W
tWLQZ
DQ0-DQ7
Note: Output E nable (G) = Low.
VALID
tAVWH
tWLWH
Figure 9. Chip Enable Controlled, Write AC Waveforms
tDVWH
(1,2)
tWHAX
tWHQX
tWHDX
DATA INPUT
AI00807
A0-A16
E1
E2
W
DQ0-DQ7
Note: 1. Output Enable (G) = High.
goes High or E2 goes Low si m ul t aneously wi th W high, th e out put remains in a high-impedance st ate.
2. If E1
tAVAV VALID
tAVE1H
tAVE1L
tAVE2H tE2HE2L
tAVWL
tE1LE1H
tAVE2L
tDVE1H
tDVE2L
tE1HAX
tE2LAX
tE1HDX
tE2LDX
DATA INPUT
AI00808
8/12
Page 9
M68Z128W
Table 9. Low VCC Data Retention Characteristics
(T
= 0 to 70°C)
A
Symbol Parameter Test Condition Min Typ Max Unit
V
= 3V, E1 V
E1
E1
CC
E2 0.2V, f = 0
V
– 0.2V, E2 0.2V, f= 0
CC
V
– 0.2V, E2 0.2V, f=0
CC
(1)
I
CCDR
V
DR
t
CDR
t
R
Note: 1. All other Inputs at VIH V
Supply Current (Data Retention)
(1)
Supply Voltage (Data Retention)
(1,2)
Chip Disable to Power Down
(2)
Operation Recovery Time
– 0.2V or VIL 0.2V .
2. See Fi gure 10 for m easuremen t p oi nts. Guara nteed but not tested.
CC
Figure 10. Low VCC Data Retention AC Waveforms
– 0.2V,
CC
t
is Read cycl e time.
AVAV
0.01 2 µA
1.4 V 0ns
t
AVAV
ns
3.6V
VCC 3V
V
> 1.4V
DR
E1 2.2V
E2 0.8V
tCDR
DATA RETENTION MODE
E1 V
– 0.2V
DR
E2 0.2V
tR
AI00664
9/12
Page 10
M68Z128W
Table 10. Ordering Information Scheme
Example: M68Z128W -70 N 1 T
Device Type
M68Z
Device Function
128 = 1 Mbit (128Kb x8)
Operating Voltage
W = 3V +0.6/–0.3V
Speed
-70 = 70 ns
Package
N = TSOP32 type 1 (8 x 20mm)
Temperature Range
1 = 0 to 70 °C
Shipping Method
T = Tape & Reel Packing
For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this de­vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 11. Revision History
Date Revision Details
November 1999 First Issue 03/20/00 TSOP32 Package Mechanical Data changed (Table 12)
10/12
Page 11
M68Z128W
Table 12. TSOP32 (Type I) - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Mechanical Data
Symbol
Typ Min Max Typ Min Max
A 1.200 0.0472 A1 0.050 0.150 0.0020 0.0059 A2 0.950 1.050 0.0374 0.0413
B 0.150 0.270 0.0059 0.0106
C 0.100 0.210 0.0039 0.0083
D 19.800 20.200 0.7795 0.7953 D1 18.300 18.500 0.7205 0.7283
e 0.500 0.0197
E 7.900 8.100 0.3110 0.3189
L 0.500 0.700 0.0197 0.0276
α
CP 0.100 0.0039
N32 32
mm inch
Figure 11. TSOP32 (Type I) - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline
A2
1 N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1 α
11/12
Page 12
M68Z128W
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