5V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable
■ ULTRA LOW DATA RETENTION CURRENT
–10nA (typical)
– 2.0µA (max)
■ OPERATION VOLTAGE: 5V ±10%
■ 128Kb x 8 VERY FAST SRAM with OUTPUT
ENABLE
■ EQUAL CYCLE and ACC ESS TIMES: 55ns
■ LOW V
■ TRI-STATE COMMON I/O
■ LOW ACTIVE and STAN DB Y POWER
■ AUTOMATIC POWER-DOWN WHEN
DESELECTED
■ INTENDED FOR USE WITH ST
ZEROPOWER
CONTROLLERS
DATA RETENTION: 2V
CC
®
AND TIMEKEEPER®
TSOP32 (N)
8 x 20mm
Figure 1. Logic Diagram
DESCRIPTION
The M68Z128 is a 1 Mbit (1,048,576 bit) CMOS
SRAM, organized as 131,072 words by 8 bits. The
device features fully static operat ion requiring no
external clocks or timing strobes, with equal address access and cycle times. It requires a single
5V ±10% supply, and all inputs and outputs are
TTL compatible.
Table 1. Signal Names
A0-A16Address Inputs
DQ0-DQ7Data Input/Output
E1
E2Chip Enable 2
G
W
V
CC
V
SS
Chip Enable 1
Output Enable
Write Enable
Supply Voltage
Ground
A0-A16
W
E1
E2
V
CC
17
M68Z128
G
V
SS
8
DQ0-DQ7
AI00647
NCNot Connected Internally
1/12March 2000
Page 2
M68Z128
Table 2. Absolute Maximum Ratings
SymbolParameterValueUnit
T
A
T
STG
(2)
V
IO
V
CC
(3)
I
O
P
D
Note: 1. Except for the ratin g " Operating Temperature Range", stresses abo ve those listed in the T able "Abs ol ute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indi cated in the Operating sections of this s pecification is not impli ed. Exposure to Absolute M aximum Rating conditions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ity docum en ts .
2. Up to a m aximum op erating V
3. One out put at a time, not to exceed 1 s econd durat i on.
Ambient Operating Temperature
Storage Temperature–65 to 150 °C
Input or Output Voltage
Supply Voltage–0.3 to 7.0V
Output Current20mA
Power Dissipation1W
of 5.5V only.
CC
Figure 2. TSOP Connection s
(1)
READ MODE
0 to 70°C
–0.3 to V
CC
+ 0.3
V
The M68Z128 is in the Read mode whenever
Write Ena ble (W
Low, and both Chip Enables (E1
) is High with Output Enable (G)
and E2) are asserted. This provides acc ess to dat a fr om eight of
the 1,048,576 locations in the static memory array,
A11G
1
32
A9
A8
A13
W
E2
A15
V
CC
NC
8
9
M68Z128
25
24
A16
A14
A12
A7
A6
A5
A4A3
1617
AI00657
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
V
SS
DQ2
DQ1
DQ0
A0
A1
A2
specified by the 17 address inputs. Val id dat a wi ll
be available at the eight output pins within t
AVQV
after the last stable address, providing G is Low,
E1
is Low and E2 is High. If Chip Enable or Output
Enable access times are not met, data access will
be measured from the limiting parameter (t
E2HQV
, or t
t
may be indeterminate at t
) rather than the address. Data out
GLQV
E1LQX
, t
E2HQX
but data lines will always be valid at t
and t
AVQV
E1LQV
GLQX
.
WRITE MODE
The M68Z128 is in the Write mode whenever the
and E1 pins are Low, with E2 High. Either the
W
Chip Enable input s (E1
able input (W
) must be de-asserted during Ad-
and E2) or the Write En-
dress transitions for subsequent write cycles.
Write begins with the concurrence of both Chip
Enables being active with W
low. Therefore, address setup time is r eferenced to Write Enable and
both Chip Enables as t
AVWL
, t
AVE1L
and t
AVE2H
respectively, and is determined by the latter occurring edge.
The Write cycle can be terminated by the earlier
, W, or the falling edge of E2.
= Low, E2 = High and
of its falling edge. Care must
WLQZ
DVWH
or for t
DVE2L
DVE1H
before the
before
be-
This device has an automatic power-down feature,
reducing the power consumption by over 99%
when deselected.
The M68Z128 is available in TSOP32 (8 x 20mm)
package.
rising edge of E1
If the Output is enabled (E1
= Low), then W will return the outputs to high im-
G
pedance within t
be taken to avoid bus contention in this type of operation. Data input must be valid for t
the rising edge of Write E nable, o r for t
fore the rising edge of E1
,
,
2/12
Page 3
Table 3. Operating Modes
OperationE1E2WGDQ0-DQ7Power
Read
Read
Write
Deselect
DeselectX
Note: 1. X = VIH or VIL.
V
IL
V
IL
V
IL
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
XX
V
IL
X
V
IH
V
IL
X
Data Output
Data InputActive
X
X
Hi-ZActive
Hi-ZStandby
Hi-ZStandby
M68Z128
Active
Table 4. AC Measurement Conditions
Figure 3. AC Testing Load Circuit
Input Rise and Fall Times≤ 15ns
Input Pulse Voltages0 to 3V
5.0V
Input and Output Timing Ref. Voltages1.5V
Note: O ut put H i-Z is defin ed as t he poi nt w here da ta is no lo nger
driven.
falling edge of E2, whi chever occurs f irst, and remain v a lid for t
WHDX
, t
E1HDX
or t
E2LDX
.
OPERATIONAL MODE
The M68Z128 has a Chip Enable power down fea-
DEVICE
UNDER
TEST
990Ω
1800Ω
CL = 50pF or 5pF
ture which invokes an automatic standby mode
whenever either Chip Enable is de-asserted (E1
High or E2 = Low). An Output Enable (G
provides a high speed tri-state control, allowing
fast read/write cycles to be achieved with the com-
=
) signal
CL includes JIG capacitance
mon I/O data bu s. Operational mo des are determined by device control inputs W
, E1, and E2 as
summarized in the Operating Modes table.
Table 5. Capacitance
SymbolParameterTest ConditionMinMaxUnit
C
IN
(2)
C
OUT
Note: 1. Sampled only, not 100% tested.
2. Outputs desele cted.
(1)
(TA = 25 °C, f = 1 MHz)
Input Capacitance on all pins (except DQ)
Output Capacitance
V
V
OUT
= 0V
IN
= 0V
9pF
9pF
OUT
AI00658B
3/12
Page 4
M68Z128
Figure 4. Block Diagram
A
A
CHIP ENABLE.
(9)
ROW
DECODER
MEMORY
ARRAY
V
CC
V
SS
E1
E2
DQ
(8)
DQ
CHIP
ENABLE
W
G
INPUT
DATA
CTRL
CHIP ENABLE.
I/O CIRCUITS
COLUMN
DECODER
(8)
AA
AI00665
Table 6. DC Characteristics
(T
= 0 to 70°C; VCC = 5V ±10%)
A
SymbolParameterTest ConditionMinTypMaxUnit
I
Input Leakage Current
LI
I
I
CC1
I
CC2
I
CC3
V
V
V
V
Note: 1. Average AC current, Ou t puts open, cycling at t
Output Leakage Current
LO
(1)
Supply Current
(2)
Supply Current (Standby) TTL
(3)
Supply Current (Standby) CMOS
Input Low Voltage–0.30.8V
IL
Input High Voltage2.2
IH
Output Low Voltage
OL
Output High Voltage
OH
2. All other Inputs at V
3. All other Inputs at V
≤ 0.8V or VIH ≥ 2.2V.
IL
≤ 0.3V or VIH ≥ VCC –0.3V.
IL
0V ≤ V
0V
V
V
CC
V
= 5.5V , E1 ≥ V
CC
or E2 ≤ 0.3V, f = 0
minimum.
AVAV
≤ V
IN
CC
≤ V
≤ V
OUT
CC
= 5.5V, (-55)
CC
= 5.5V, E1 = VIH or
E2 = V
I
I
= 2.1mA
OL
= –1mA
OH
IL
, f =0
CC
– 0.3V
±1µA
±1µA
3070mA
0.12mA
0.420µA
V
+ 0.3
CC
0.4V
2.4V
V
4/12
Page 5
M68Z128
Table 7. Read and Standby Modes AC Characteristics
(TA = 0 to 70°C; VCC = 5V ±10%)
SymbolParameter
t
AVAV
t
AVQV
t
E1LQV
t
E2HQV
t
GLQV
t
E1LQX
t
E2HQX
t
GLQX
t
E1HQZ
t
E2LQZ
t
GHQZ
t
AXQX
t
PU
t
PD
Note: 1. CL = 100pF.
2. C
3. At any given temperature and voltage condition, t
Read Cycle Time55ns
(1)
Address Valid to Output Valid55ns
(1)
Chip Enable 1 Low to Output Valid55ns
(1)
Chip Enable 2 High to Output Valid55ns
(1)
Output Enable Low to Output Valid20ns
(3)
Chip Enable 1 Low to Output Transition5ns
(3)
Chip Enable 2 High to Output Transition5ns
(3)
Output Enable Low to Output Transition0ns
(2,3)
Chip Enable 1 High to Output Hi-Z20ns
(2,3)
Chip Enable 2 Low to Output Hi-Z20ns
(2,3)
Output Enable High to Output Hi-Z20ns
(1)
Address Transition to Output Transition5ns
Chip Enable 1 Low or Chip Enable 2 High to Power Up0ns
Chip Enable 1 High or Chip Enable 2 Low to Power Down55ns
= 5pF.
L
given devic e.
EIHQZ
+ t
EZHQZ
is less than t
EILQX
and t
M68Z128
MinMax
, t
EZLQX
is less than t
GHQZ
GLQX
Unit-55
for any
Figure 5. Address Controlled, Read Mode AC Waveforms
tAVAV
A0-A16
tAVQVtAXQX
DQ0-DQ7
Note: E1 = Low, E2 = High, G = Low, W = High.
VALID
DATA VALID
AI01078
5/12
Page 6
M68Z128
Figure 6. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms.
tAVAV
A0-A16
tAVQVtAXQX
tE1LQV
E1
tE1LQX
tE2HQV
E2
tE2HQX
G
tGLQX
DQ0-DQ7
Note: Write Enable (W) = High.
Figure 7. Standby Mode AC Waveforms
tGLQV
VALID
tE1HQZ
tE2LQZ
tGHQZ
VALID
AI00805
6/12
E1
E2
I
CC1
I
CC2
tPU
50%
tPD
AI00806B
Page 7
Table 8. Write Mode AC Characteristics
(T
= 0 to 70°C; VCC = 5V ±10%)
A
M68Z128
M68Z128
SymbolParameter
t
AVAV
t
AVWL
t
AVWH
t
AVE1H
t
AVE2L
t
WLWH
t
WHAX
t
WHDX
t
WHQX
t
WLQZ
t
AVE1L
t
AVE2H
t
E1LE1H
t
E2HE2L
t
E1HAX
t
E2LAX
t
DVWH
t
DVE1H
t
DVE2L
Note: 1. CL = 5pF.
2. At any gi ven temperature and voltage con di tion, t
Write Cycle Time55ns
Address Valid to Write Enable Low0ns
Address Valid to Write Enable High45ns
Address Valid to Chip Enable 1 High45ns
Address Valid to Chip Enable 2 Low45ns
Write Enable Pulse Width 45ns
Write Enable High to Address Transition0ns
Write Enable High to Input Transition0ns
(2)
Write Enable High to Output Transition5ns
(1,2)
Write Enable Low to Output Hi-Z20ns
Address Valid to Chip Enable 1 Low0ns
Address Valid to Chip Enable 2 High0ns
Chip Enable 1 Low to Chip Enable 1 High45ns
Chip Enable 2 High to Chip Enable 2 Low45ns
Chip Enable 1 High to Address Transition0ns
Chip Enable 2 Low to Address Transition0ns
Input Valid to Write Enable High25ns
Input Valid to Chip Enable 1 High25ns
Input Valid to Chip Enable 2 Low25ns
WHQX
is less than t
for any given device.
WLQZ
Unit-55
MinMax
7/12
Page 8
M68Z128
Figure 8. Write Enable Controlled, Write AC Waveforms
tAVAV
A0-A16
tAVE1L
E1
tAVE2H
E2
tAVWL
W
tWLQZ
DQ0-DQ7
Note: Output E nable (G) = Low.
VALID
tAVWH
tWLWH
Figure 9. Chip Enable Controlled, Write AC Waveforms
tAVAV
tDVWH
(1, 2)
tWHAX
tWHQX
tWHDX
DATA INPUT
AI00807
A0-A16
E1
E2
W
DQ0-DQ7
Note: 1. Output Enable (G) = High.
2. If E1
goes High or E2 goes Low simultaneously with W high, the out put remain s i n a hi gh-impedance state.
VALID
tAVE1H
tAVE1L
tAVE2HtE2HE2L
tAVWL
tE1LE1H
tAVE2L
tDVE1H
tDVE2L
tE1HAX
tE2LAX
tE1HDX
tE2LDX
DATA INPUT
AI00808
8/12
Page 9
M68Z128
Table 9. Low VCC Data Retention Characteristics
(T
= 0 to 70°C)
A
SymbolParameterTest ConditionMinTypMaxUnit
= 3V, E1 ≥ V
V
E1
E1
CC
E2 ≤ 0.3V, f = 0
≥ V
– 0.3V or E2 ≤ 0.3V, f = 0
CC
≥ V
– 0.3V or E2 ≤ 0.3V, f = 0
CC
I
CCDR
V
t
CDR
t
ER
Note: 1. See Figure 10 for measuremen t points. Gu aranteed but not tested. t
Supply Current (Data Retention)
Supply Voltage (Data Retention)
DR
Chip Disable to Power Down
(1)
Operation Recovery Time
Figure 10. Low VCC Data Retention AC Waveforms
5V
VCC 3V
V
> 2.0V
DR
E1 2.2V
tCDR
DATA RETENTION MODE
E1 ≥ V
DR
– 0.3V or
CC
is Read cycl e time.
AVAV
– 0.3V
0.012µA
2V
0ns
t
AVAV
tER
ns
E2 0.8V
E2 ≤ 0.3V
AI00659
9/12
Page 10
M68Z128
Table 10. Ordering Information Scheme
Example:M68Z128-55 N1
Device Type
M68Z
Speed
-55 = 55ns
Package
N = TSOP32 (8 x 20mm)
Temperature Range
1 = 0 to 70 °C
For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 11. Revision History
DateRevision Details
May 1999First Issue
03/20/00TSOP32 Package Mechanical Data changed (Table 12)
10/12
Page 11
M68Z128
Table 12. TSOP32 (Type I) - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Mechanical Data
Figure 11. TSOP32 (Type I) - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1α
11/12
Page 12
M68Z128
Information furnished is believed to be accurate and reliable. However, STMicroelec tronics as sumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or o th erwise u nder any pat ent or pat ent righ ts of STMicroelectron i cs. Specifications m entioned i n this publication are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as c ritical components in li f e support dev i ces or systems without express writ t en approval of STMicroel ectronics.
The ST log o i s registered trademark of STMic roelectronics
2000 STMicroel e ctronics - All Ri ghts Rese rved
All other names are the property of their respective owners.
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Singapor e - Spain - Sweden - Switz erl and - Unit ed K i ngdom - U.S.A.
STMicroelect ro n ics GRO UP OF COMPANI ES
http://www.st.com
12/12
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