The M68AW064F is a 1 Mbit (1,048,576 bit)
CMOS SRAM, organized as 65,536 words by 16
bits. The device features fully static opera tion requiring no external clocks or timing strobes, with
equal address access and cycle times. It requires
tomatic power-down feature, redu cing the power
consumption by over 99% when deselected.
The M68AW064F is available in TFBGA48 (0.75
mm pitch) package.
a single 2.7 to 3.6V supply. This device has an au-
Figure 3. TFBGA Connections (Top view through package)
654321
A
B
C
D
E
F
G
H
DQ8
DQ9
V
SS
V
CC
DQ14
DQ15
UB
DQ10
DQ11
DQ12
DQ13
NC
A0GLB
NC
NCV
A14
A9
A1
A4E
A6A5
A7
NC
A15
A13
A10
A2NC
DQ3
DQ4
DQ5
DQ0A3
DQ2DQ1
V
CC
SS
DQ6
DQ7WA12
NCA11A8NC
4/18
AI04874
Figure 4. Block Diagram
A15
A7
ROW
DECODER
MEMORY
ARRAY
M68AW064F
V
CC
V
SS
DQ15
UB
DQ0
LBLB
W
UB
LB
E
G
MAXIMUM RATI NG
Stressing the device ab ove the rating listed in t he
Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions ab ove those i ndicated in t he
Operating sections of this specificat ion is not im-
(8)
(8)
(8)
UB
(8)
LB
I/O CIRCUITS
COLUMN
DECODER
A0A6
AI04875
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and ot her relevant quality documents.
Table 2. Absolute Maximum Ratings
SymbolParameterValueUnit
(1)
I
O
T
A
T
STG
V
CC
(2)
V
IO
P
D
Note: 1. One out put at a time, not to exceed 1 second durat i on.
2. Up to a maxim um operating V
Output Current20mA
Ambient Operating Temperature –55 to 125°C
Storage Temperature–65 to 150 °C
Supply Voltage–0.5 to 4.6V
Input or Output Voltage
–0.5 to V
CC
+0.5
Power Dissipation1W
of 3.6V only.
CC
V
5/18
M68AW064F
DC AND AC PARAMETERS
This section summarizes the operat ing and measurement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the M easure-
Table 3. Operating and AC Measurement Conditions
ParameterM68AW064F
Supply Voltage
V
CC
Ambient Operating Temperature–40 to 85°C
Load Capacitance (C
Output Circuit Protection Resis tance (R
Load Resistance (R
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
Input and Output Transition Timing Ref. Voltages
)
L
)
1
)
2
ment Conditions listed in the rel evant tables. Designers should check that the operating conditions
in their projects match the measurement conditions when using the quoted parameters.
2.7 to 3.6V
30 or 5pF
1.10k
1.55k
4ns
≤
0 to V
V
CC
V
= 0.3VCC; VOH = 0.7V
OL
Ω
Ω
CC
/2
CC
Figure 5. AC Measurement I/O WaveformFigure 6. AC Measurement Load Circuit
V
CC
I/O Timing Reference Voltage
V
CC
0V
I/O Transition Timing Reference Voltage
V
CC
0V
VCC/2
0.7V
0.3V
AI04831
CC
CC
DEVICE
UNDER
TEST
R
2
CL includes JIG capacitance
1N914
R
1
OUT
C
L
AI03853
6/18
Table 4. Capacitance
Symbol
C
C
OUT
Note: 1. Sampled only, not 100% tested.
2. At T
3. Outputs desel ected.
Input Capacitance on all pins (except DQ)
IN
(3)
Output Capacitance
= 25°C, f = 1 MHz, VCC = 3.0V.
A
Table 5. DC Characteristics
Parameter
(1,2)
Test
Condition
V
= 0V
IN
V
= 0V
OUT
M68AW064F
M68AW064F
MinMaxUnit
6pF
8pF
SymbolParameterTest Condition
= 3.6V, f = 1/t
V
AVAV
CC
I
OUT
= 3.6V, f = 1MHz,
V
CC
I
OUT
V
CC
E
≥ V
–0.15V, f = 0
CC
0V ≤ V
V
0V
≤
OUT
V
CC
V
CC
V
CC
I
= –1.0mA
OH
V
CC
I
= 2.1mA
OL
minimum.
= 0mA
= 0mA
= 3.6V,
≤ V
IN
≤ V
= 2.7V
= 2.7V
= 2.7V,
= 2.7V,
CC1
I
CC2
I
SB
I
V
V
V
V
Note: 1. Aver age AC curre nt, cycling at t
Current
Operating Supply
Current
Standby Supply Current
(2)
CMOS
I
Input Leakage Curren t
LI
Output Leakage Current
LO
Input High Voltage
IH
Input Low Voltage
IL
Output High Voltage
OH
Output Low Voltage
OL
2. All other Inputs at V
3. Output disabled.
≤ 0.15V or VIH ≥ VCC –0.15V.
IL
Operating Supply
(1)
I
CC
CC
MinTypMaxMinTypMax
,
AVAV
72015mA
1212mA
0.5150.515µA
–11–11µA
(3)
–11–11µA
V
2.0
CC
+ 0.3
2.0
–0.30.4–0.30.4V
2.22.2V
0.40.4V
Unit5570
V
CC
+ 0.3
V
7/18
M68AW064F
OPERATION
The M68AW064F has a Chip Enable power down
feature which invokes an automatic standby mode
whenever either Chip Enable is de-asserted
a high speed tri-state control, allowing fast read/
write cycles to be achieved with the common I/O
data bus. Operational modes are determined by
device control inputs W
, E, LB and UB as summa-
rized in the Operating Modes table (see Table 6).
V
IH
IL
IL
IL
X
IH
IH
IL
IL
IH
V
IH
V
IH
XHi-ZHi-Z
V
IL
V
IL
V
IL
V
IL
V
IL
Hi-ZHi-Z
Data OutputHi-Z
Data InputHi-Z
Hi-ZHi-Z
Hi-ZData Output
Hi-ZData Input
Data OutputData Output
Data InputData Input
Standby (I
Standby (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
CC
CC
CC
CC
CC
CC
CC
CC
SB
SB
)
)
)
)
)
)
)
)
)
)
Read Mode
The M68AW064F is in the Read mode whenev er
Write Ena ble (W
Low, and Chip Enable (E
) is High with Output Enable (G)
) is asserted. This provides access to data from eight or sixteen, depending on the status of the signal UB
and LB, of
the 1,048,576 locations in the static memory array,
specified by the 16 address inputs. Val id dat a wi ll
within t
ing G
Enable access times are not met, data access will
be measured from the l imiting parameter (t
t
GLQV
may be indeterminate at t
but data lines will always be valid at t
be available at the eight or sixteen output pins
Figure 7. Address Controlled, Read Mode AC Waveforms
tAVAV
A0-A15
tAVQVtAXQX
DQ0-DQ15
Note: E = Low, G = Low, W = High, UB = Low and/or LB = Low.
VALID
after the last stable address , provid-
AVQV
is Low and E is Low. If Chip Enable or Output
and t
.
ELQV
BLQX
or t
BLQV
DATA VALID
) rather than the address. Data out
, t
ELQX
GLQX
AVQV
AI04876
,
8/18
Figure 8. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms.
tAVAV
M68AW064F
A0-A15
tAVQVtAXQX
tELQV
E
tELQX
tGLQV
G
tGLQX
DQ0-DQ15
tBLQV
UB, LB
tBLQX
Note: Write Enable (W) = High.
VALID
VALID
Figure 9. Chi p E nable or UB/LB Controlled, Standby Mode AC Waveforms
tEHQZ
tGHQZ
tBHQZ
AI04877
E, UB, LB
I
CC
I
SB
tPU
50%
tPD
AI03856
9/18
M68AW064F
Table 7. Read and Standby Mode AC Characteristics
SymbolParameter
t
AVAV
t
AVQV
t
AXQX
t
BHQZ
t
BLQV
t
BLQX
t
EHQZ
t
ELQV
t
ELQX
t
GHQZ
t
GLQV
t
GLQX
t
PD
t
PU
Note: 1. At any given temperature and voltage condi tion, t
2. C
Read Cycle Time5570ns
Address Valid to Output Valid5570ns
Data hold from address change1010ns
(1, 2)
Upper/Lower Byte Enable High to Output Hi-Z2025ns
Upper/Lower Byte Enable Low to Output Valid2535ns
Upper/Lower Byte Enable Low to Output Transition55ns
(1, 2)
Chip Enable High to Output Hi-Z2025ns
Chip Enable Low to Output Valid5570ns
Chip Enable Low to Output Transition1010ns
(1, 2)
Output Enable High to Output Hi-Z2025ns
Output Enable Low to Output Valid2535ns
Output Enable Low to Output Transition55ns
Chip Enable or UB/LB High to Power Down5570ns
Chip Enable or UB/LB Low to Power Up00ns
is less than t
any given de vice.
= 5pF.
L
GHQZ
GLQX
, t
BHQZ
M68AW064F
Min.Max.Min.Max.
is less than t
BLQX
and t
is less than t
EHQZ
Unit5570
ELQX
for
10/18
Write Mode
The M68AW 064F is in the Write mode whenever
the W
and E are Low. Either the Chip Enable input
(E
) or the Write Enable input (W) must be deasserted during Address transitions for
subsequent write cycles. When E
UB
or LB is Low, write cycle begins on the W (E)’s
(W) is Low, and
falling edge. Therefore, address setup time is
referenced to Write Enable as t
Enable as t
and is determined by the latter
AVEL
AVWL
and to Chip
occurring edge.
The Write cycle can be terminated by the earlier
rising edge of E
If the Output is enabled ( E
UB
= Low), then W will return the ou tputs to high
impedance within t
must be taken to avoid bus content ion in this type
of operation. Data input must be valid for t
before the rising edge of Write Enable, or for t
before the rising edge of E, whichever occurs first,
and remain valid for t
Figure 10. Write Enable Controlled, Write AC Waveforms
tAVAV
or W.
WLQZ
M68AW064F
= Low, G = Low, LB or
of its falling edge. Care
WHDX
and t
respectively.
EHDX
DVWH
DVEH
A0-A15
E
W
DQ0-DQ15
UB, LB
tAVEL
tAVWL
tWLQZ
VALID
tAVWH
tWHAX
tWLWH
tWHQX
tWHDX
DATA INPUT
tDVWH
tBLWH
AI04878
11/18
M68AW064F
Figure 11. Chip Enable Controlled, Write AC Waveforms
tAVAV
A0-A15
E
W
DQ0-DQ15
UB, LB
tAVEL
tAVWL
VALID
tAVEH
tBLEH
tELEH
tEHAX
tEHDX
DATA INPUT
tDVEH
AI04879
12/18
Table 8. Write Mode AC Characteristics
SymbolParameter
t
AVAV
t
AVEH
t
AVEL
t
AVWH
t
AVWL
t
BLEH
t
BLWH
t
DVEH
t
DVWH
t
EHAX
t
EHDX
t
ELEH
t
WHAX
t
WHDX
t
WHQX
(1,2)
t
WLQZ
t
WLWH
Note: 1. At any given temperature and v ol t age conditi on, t
2. C
Write Cycle Time5570ns
Address Valid to Chip Enable High4560ns
Address valid to Chip Enable Low00ns
Address Valid to Write Enable High4560ns
Address Valid to Write Enable Low 00ns
LB, UB Low to Chip Enable High4560ns
LB, UB Low to Write Enable High4560ns
Input Valid to Chip Enable High2530ns
Input Valid to Write Enable High2530ns
Chip Enable High to Address Transition00ns
Chip enable High to Input Transition00ns
Chip Enable Low to Chip Enable High4560ns
Write Enable High to Address Transition00ns
Write Enable High to Input Transition00ns
(1)
Write Enable High to Output Transition55ns
Write Enable Low to Output Hi-Z2525ns
Write Enable Low to Write Enable High 4050ns
= 5pF.
L
is less than t
WLQZ
M68AW064F
MinMa xMinMax
for any given device.
WHQX
M68AW064F
Unit557 0
13/18
M68AW064F
Figure 12. Low VCC Data Retention AC Waveforms
DATA RETENTION MODE
E ≥ V
DR
– 0.2V
tR
AI04885
VCC 3.3V
V
> 2.0V
DR
E
Table 9. Low V
3.6V
tCDR
Data Retention Characteristics
CC
SymbolParameterTest ConditionMinTypMaxUnit
(1)
I
CCDR
t
CDR
t
R
V
DR
Note: 1. All other Inputs at VIH ≥ V
Supply Current (Data Retention)
Chip Deselected to Data
(1,2)
Retention Time
(2)
Operation Recovery Time
(1)
Supply Voltage (Data Retention)
–0.2V or VIL ≤ 0.2V.
2. See Figure 12 for measur em ent points. Guaranteed but not tested.
3. No input may exceed V
CC
CC
+0.3V.
V
= 2.0V, E ≥ V
CC
E
E
–0.3V, f = 0
CC
≥ V
–0.3V, f = 0t
CC
≥ V
–0.3V, f = 0
CC
t
AVAV
is Read cycl e time.
(3)
AVAV
0.515µA
0ns
2.03.6V
ns
14/18
PACKAGE MECHANICAL
Figure 13. TFBGA48 - 6 x 8 ball array, 0.75 mm pitch, Bottom View Package Outline
D
M68AW064F
FE
BALL "A1"
E1E
Note: Drawing is not to scale.
FD
D1
SD
SE
eb
A
ddd
e
A2
A1
BGA-Z26
Table 10. TFBGA48 - 6 x 8 ball array, 0.75 mm pitch, Package Mechanical Data
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the STMicroelectronics Sales Office nearest to you.
16/18
REVISION HIST ORY
Table 12. Document Revision History
DateVersionRevision Details
July 2001-01First Issue
Revision numbering modified: a minor revision will be indicated by incrementing the
09-Oct-20021.1
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 01 equals 1.0).
Part number modified.
M68AW064F
23-Apr-20031.2
55ns speed class added. Maximum Standby Supply Current I
certain AC Characteristics modified.
modified. Values of
SB
17/18
M68AW064F
Information furnished is believed to be accurate an d rel i able. Howev er, STMicroel ectronics assumes no resp onsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent ri ghts of STM i croelectr onics. Specifications mentioned in th i s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in lif e support devi ces or systems wi thout exp ress written approval of STM i croelectronics.
The ST log o i s registered trademark of STMicroelectronics
All other nam es are the pro perty of their respect ive owners