Datasheet M63954P Datasheet (Mitsubishi)

MITSUBISHI SEMICONDUCTORS <HVIC>

M63954P

HIGH VOLTAGE HALF BRIDGE DRIVER

DESCRIPTION

M63954P is high voltage integrated circuit designed for
electronic ballast, Power MOSFET and IGBT module driver
for half bridge applications.

FEATURES

¡FLOATING SUPPLY VOLTAGE ................................. 600V

¡OUTPUT CURRENT .............................................±500mA

¡HALF BRIDGE DRIVER
¡BUILT-IN OSCILLATOR
¡DIP_16 PACKAGE
¡BUILT-IN REGULATOR

APPLICATIONS

The M63954P can be used for fixed or continuous lamp con­trol of fluorescent lamp inverter.

BLOCK DIAGRAM

RVCOCVCO

4

3

VCO

2

+
–

0.652✽VREG

–
+

+
–

0.773✽VREG

SQ
R

Q

PIN CONFIGURATION (TOP VIEW)

1

VREG

2

VCO

3

CVCO

4

RVCO

5

AB

6

ABTH

7

LNTH

8

LN

PACKAGE TYPE 16P4

Dead
Time

Level

Shift

SQ
R

M63954P

11

HVCC

10

HO

9

HGND

16
15
14
13
12
11
10

9

CNT
OV
GND
LO
VCC
HVCC
HO
HGND

VREG

LN

LNTH

VCC

CNT

13

1

8
7

12

16

–
+

UV

+
–

VREG

VREG START

DELAY

DELAY

DELAY

S

Q

R

SQ
R

DELAY

DELAY

1/2VREG

LO

5

+

AB

–

6

ABTH

15

OV

+
–

14

GND

Sep. 2000

MITSUBISHI SEMICONDUCTORS <HVIC>

M63954P

HIGH VOLTAGE HALF BRIDGE DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Conditions Ratings Unit
HGND
HVCC
VCC
VOV
VAB
IAB
VABTH
VLN
ILN
VLNTH
VVCO
IHO
ILO
Pt
K q
Rth(j-c)
Tj
Topr
Tstg

High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side Fixed Supply Voltage
OV Input Voltage
AB Input Voltage
AB Input Current
ABTH Input Voltage
LN Input Voltage
LN Input Current
LNTH Input Voltage
VCO Input Voltage
High Side Output Current
Low Side Output Current
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation T emperature
Storage Temperature

HGND=GND

Ta = 25°C, On Board
Ta > 25°C, On Board

600
–0.5~+20
–0.5~+20

–0.5 ~ VCC+0.5
–0.5 ~ VCC+1.0

2
–0.5 ~ VCC+0.5
–0.5 ~ VCC+1.0

2
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5

±500
±500

1.56

12.5
25

150

–20 ~ +80

–40 ~ +125

V
V
V
V
V

mA

V
V

mA

V

V
mA
mA

W

mW/°C

°C/W

°C
°C
°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)

Symbol UnitParameter Test conditions

HVCC
VCC
VREG
ICC1
ICC2
ICC3
ICC4
VUVr
VUVt
tUV
VOV
tOV
IOV
fVCO
fO
VVCO
IVCO
VCVCO
ICVCO
IrRVCO
VSRVCO

High Side Floating Supply Voltage
Low Side Fixed Supply Voltage
Internal Supply Voltage
Standby Current
ON Suspension Oscillate Current
ON Oscillation Current (50Hz)
ON Oscillation Current (115kHz)
VCC UV Reset Voltage
VCC UV Trip Voltage
VCC Supply UV Filter Time
OV Protection Vth
OV Filter Time
OV Input Leak Current
VCO Frequency Set Up Limit
Output Frequency Set Up Limit
VCO Input Voltage Limit
VCO Input Leak Current
CVCO Input Voltage
CVCO Input Leak Current
RVCO Leak Current
RVCO Saturation Voltage

HVCC-HGND

VCC=15V, NO Load
VCC=15V, CNT=5V, OV=5V
VCC=15V, CNT=0V
VCC=15V, RVCO1=15kΩ, VVCO=0.33VREG
RVCO2=39kΩ, CVCO=100pF, VVCO=0.42VREG

VOV=0V

LO, HO

VVCO=0V
VREG=7.2V
VCVCO=0V, VVCO >VCVCO
VCVCO=0V, VREG=7.2V, VRVCO=10V
VCVCO=6V, VREG=7.2V, IRVCO=10mA

Min. Typ. Max.

13
13

6.9
—
—

2.0

2.0

9.0

5.5
14

3.4
30

–0.5

—
—

1.5
–2

5.5
–2
—
—

Limits

15
15

7.2

0.75

2.0

5.0
8

10

6.5

—

3.6

—

–0.08

—
—
—

–0.66

5.55

–0.66

—
—

17
17

7.5

1.0

4.0

8.0
12
11

7.5

100

3.8

150

—

250
125

VREG–1.5

—

5.6
—

0.5

500

V
V

V
mA
mA
mA
mA

V

V

µs

V

µs

µA

kHz
kHz

V

µA

V

µA
µA

mV

Sep. 2000

MITSUBISHI SEMICONDUCTORS <HVIC>

HIGH VOLTAGE HALF BRIDGE DRIVER

ELECTRICAL CHARACTERISTICS (Ta=25°C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)

Symbol UnitParameter Test conditions

VLN
VLNTH
VLNIO
ILN
ILNTH
ILNTHh
tLN
VAB
VABTH
VABIO
IAB
IABTH
tAB
VCNT
VCNTh
ICNT
tCNT
IRFC
tDEAD
VHOH1
VHOH2
VHOH3
VHOL1
VHOL2
VHOL3
VLOH1
VLOH2
VLOH3
VLOL1
VLOL2
VLOL3
tr
tf

LN Input Voltage Limit
LNTH Input Voltage Limit
LN Offset Voltage
LN Input Leak Current
LNTH Input Leak Current
LNTH Input Hysteresis Current
LN Filter Time
AB Input Voltage Limit
ABTH Input Voltage Limit
AB Offset Voltage
AB Input Leak Current
ABTH Input Leak Current
AB Filter Time
CNT Input Threshold Voltage
CNT Input Hysteresis Voltage
CNT Input Leak Current
CNT Filter Time
Floating Supply Leak Current
Dead Time

HO Output Voltage

LO Output Voltage

Output Rise Time
Output Fall Time

VLN>VLNTH
VLN>VLNTH, VCC<VUVr
VLN > VLNTH, VLNTH=5V

VAB<VABTH
VAB>VABTH

VCNT=0V

VHGND=600V
C=1000pF
IHO=0mA
IHO=–20mA
IHO=–200mA
IHO=0mA
IHO=20mA
IHO=200mA
ILO=0mA
ILO=–20mA
ILO=–200mA
ILO=0mA
ILO=20mA
ILO=200mA
Amplitude 10% 90%, C=1000pF
Amplitude 90% 10%, C=1000pF

Min. Typ. Max.

1.0

1.0

–50

–1
–1
20
14

0
0

–50
–0.5
–0.5

30

3.4

0.8

–0.5

30
—

1.0
14
10

1.0
—
—
—
14
10

1.0
—
—

←
←

—
—
—

Limits

—
—

—
–0.22
–0.22

40

—

—

—

—
–0.08
–0.08

—

3.6

1.0

–0.08

—

—

—

14.4
13

5.5
5

0.5
6

14.4
13

5.5
5

0.5
6

50
50

M63954P

VCC–1.5
VCC–1.5

50
—
—
80

100
VREG–1.5
VREG–1.5

50
—
—

150

3.8

1.2
—

150

1.0

1.9
—
—
—

100

1.0
12
—
—
—

100

1.0
12

120
120

V
V

mV

µA
µA
µA
µs

V
V

mV

µA
µA
µs

V
V

µA
µs
µA
µs

V
V
V

mV

V
V
V
V
V

mV

V

V
ns
ns

OUTPUT FREQUENCY (RVCO1=15kΩ, RVCO2=15kΩ, CVCO=100pF)

Oscillation Frequency VCO Input Voltage Min.

50kHz
60kHz

0.33VREG

0.42VREG

—
—

Typ.

50
60

Max.

—
—

Unit
kHz

kHz

Sep. 2000

DEAD TIME

MITSUBISHI SEMICONDUCTORS <HVIC>

M63954P

HIGH VOLTAGE HALF BRIDGE DRIVER

90%

HO

LO

OUTPUT RISE TIME

FALL TIME

HO, LO

90%

10%

tDEADtDEAD

10%

90% 90%

10%

tr tf

10%

Sep. 2000

PERFORMANCE CURVES

MITSUBISHI SEMICONDUCTORS <HVIC>

M63954P

HIGH VOLTAGE HALF BRIDGE DRIVER

Thermal Derating Factor Characteristic ICC–VCC Characteristic

2

1.5
On Board

1

0.5

Power Dissipation Pt (W)

0

025 7550 150125100 8 13 18 23

Ambient Temperature Ta (°C)

8.0

7.5

7.0

VREG (V)

VREG–VCC Characteristic tDEAD–VCC Characteristic

Non Board

Oscillation
suspended

Frequency=50kHz

6

5

4

3

ICC (mA)

2

1

0

1.5

1.4

1.3

1.2

tDEAD (µs)

Frequency=115kHz

Frequency=50kHz

VCC (V)

Oscillation
suspended

Standby

tDEAD1

tDEAD2

6.5

6.0

8 13 18 23 8 13 18 23

VCC (V)

20

15

10

VLOH (V)

VLOH–VCC Characteristic VLOL–VCC Characteristic

ILO=0mA

ILO=–20mA

ILO=–200mA

5

0

8 13 18 23 8 13 18 23

VCC (V)

1.1

1

10

8

6

VLOL (V)

4

2

0

VCC (V)

VCC (V)

ILO=200mA

ILO=20mA

ILO=0

Sep. 2000

MITSUBISHI SEMICONDUCTORS <HVIC>

M63954P

HIGH VOLTAGE HALF BRIDGE DRIVER

6

5

4

3

ICC (mA)

2

1

0
–50 0 50 100 150 –50 0 50 150100

12

10

8

6

VUV (V)

4

2

0
–50 0 50 100 150 –50 500 100 150

ICC–Ta Caracteristic VREG–Ta Characteristic

ICC4

ICC3

ICC2
ICC1

Ta (°C)

VUV–Ta Characteristic tDEAD–Ta Characteristic

VUVr

VUVt

7.35

7.30

7.25

7.20

7.15

VREG (V)

7.10

7.05

7.00

1.90

1.80

1.70

1.60

1.50

1.40

tDEAD (µs)

1.30

1.20

1.10

1.00

Oscillation
suspended

Frequency=50kHz

Ta (°C)

tDEAD1

tDEAD2

Ta (°C)

16
14

12
10

VLOH (V)

VLOH–Ta Characteristic VLOL–Ta Characteristic

ILO=0mA

ILO=–20mA

8
6
4
2

0
–50 0 50 100 150 –50 0 50 100 150

Ta (°C)

ILO=–200mA

10

9
8
7
6
5

VLOL (V)

4
3
2
1

0

Ta (°C)

ILO=200mA

ILO=20mA

ILO=0mA

Ta (°C)

Sep. 2000

DIP16-P-300-2.54

Weight(g)

–

JEDEC Code

1.0

EIAJ Package Code

Lead Material

Alloy 42/Cu Alloy

16P4

Plastic 16pin 300mil DIP

Symbol

Min Nom Max

A

A

2

b

b

1

b

2

c

E

D

L

Dimension in Millimeters

A

1

0.51 – –
–3.3–

0.4 0.5 0.6

1.4 1.5 1.8

0.9 1.0 1.3

0.22 0.27 0.34

18.8 19.0 19.2

6.15 6.3 6.45
–2.54–
–7.62–

3.0 – –

0° –15°

– – 4.5

e

e

1

16

9

8

1

E

c

e

1

D

A2

A1

b2

b

b

1

e

L

A

SEATING PLANE

PACKAGE OUTLINE

MITSUBISHI SEMICONDUCTORS <HVIC>

M63954P

HIGH VOLTAGE HALF BRIDGE DRIVER

Sep. 2000