Datasheet M63836FP, M63836KP Datasheet (MITSUBISHI)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63836FP/KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION

The M63836FP/KP 8-channel sinkdriver, consists of 8 PNP
and 16 NPN transistors connected to from eight high current
gain driver pairs.

FEATURES

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (IC(max) = 500mA)

●

3V micro computer compatible input

●

“L” active level input

●

With input diode

●

With clamping diodes

●

Wide operating temperature range (Ta = –40 to +85°C)

APPLICATION

Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.

FUNCTION

The M63836FP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage micro­computer series. A resistor of 3.5kΩ is connected between
the input and the base of PNP transistors. A clamp diode for
inductive load transient suppression is connected for the
output pin (collector) and COM pin. The input diode is in­tended to prevent the flow of current from the input to the
Vcc. without this diode, the current flows from “H” input to the
Vcc and the “L” input circuit is activated, in such a case
where one of the inputs of the 8 circuit is “H” and the other
are “L” to save power consumption. The diode is inserted to
prevent such mis-operation. The outputs are capable of driv­ing 500mA and are rated for operation with output voltage up
to 50V.

PIN CONFIGURATION

INPUT

NC

IN1

IN2

IN3

IN4

IN5

IN6

IN7

IN8

GND

1

2

3

4

5

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

20P2N-A(FP)

Package type

20P2E-A(KP)

CIRCUIT DIAGRAM

20K

INPUT

3.5K

The eight circuits share the Vcc, COM and GND

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

1.05K

7.2K 3K

COM COMMON

O1

O2

O3

O4

OUTPUT

O5

O6

O7

O8

V

CC

NC : No connection

V

CC

COM

OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCC

VCEO

IC

VI

IF

VR

Pd

Topr

Tstg

Supply voltage

Collector-emitter voltage

Collector current

Input voltage

Clamping diode forward current

Clamping diode reverse voltage

Power dissipation

Operating temperature

Storage temperature

Output, H

Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

7

–0.5 ~ +50

500

CC

–0.5 ~ V

500

50

1.10(FP)/0.68(KP)

–40 ~ +85

–55 ~ +125

V

V

mA

V

mA

V

W

°C
°C

Sep. 2001

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol

VCC Supply voltage

Collector current (Current per

C

I

1 circuit when 8 circuits are
coming on simultaneously)

VIH

VIL

“H” input voltage

“L” input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

V

CE(sat)

II

VF

IR

ICC

hFE

✽ : Typical values are at Ta = 25°C

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current
Clamping diode forward volltage

Clamping diode reverse current
Supply current (AN only Input)

DC amplification factor

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Parameter

Duty Cycle
FP : no more than 4%
KP : no more than 2%

Duty Cycle
FP : no more than 15%
KP : no more than 6%

I

CEO = 100µA

V

CC = 2.7V, VI = 0.5V, IC = 400mA
CC = 2.7V, VI = 0.5V, IC = 200mA

V

V

I = VCC-2.2V

F = 400mA

I

V

R = 50V
CC = 3.6V, VI = 0.5V

V

CC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C

V

M63836FP/KP

Limits

min typ max

2.7

V

CC-0.5

min typ max

—
—

—
—
—

—

2000

50

3.0

0

—

0

—

—
—

0

Limits

✽

—

1.15

0.93

–220

1.4

0.1

2.6

10000

3.6

400

200

VCC

VCC-2.2

—

2.4

1.6

–600

2.4

100

4.0

—

Unit

V

mA

V

V

V

V

µA

V

µA

mA

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t

on

toff

NOTE 1 TEST CIRCUIT

Turn-on time

Turn-off time

INPUT V

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω

I

= 0.5 ~ 2.7V

V
(2)Input-output conditions : R
(3)Electrostatic capacity C

at connections and input capacitance at probes

CC

Measured
device

OPEN

L

= 30Ω, Vo = 10V, Vcc = 2.7V

L

includes floating capacitance

CL = 15pF (note 1)

O

V

R

L

OUTPUT

L

C

TIMING DIAGRAM

min typ max

—

—

INPUT

50% 50%

OUTPUT

50% 50%

ton toff

Limits

120

4500

—

—

ns

ns

Sep. 2001

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63836FP/KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

2.0

1.5

M63836FP

1.10

1.0

M63836KP

0.68

0.5

Power dissipation Pd(max) (W)

0

0 25 50 75 100

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

500

(M63836FP)

400

300

85

0.572

0.354

Output Saturation Voltage

Collector Current Characteristics

500

Vcc=2.7V
VI=0.5V

400

300

200

Collector current Ic (mA)

100

Ta= 85°C

0

0 0.5 1.0 1.5 2.0

Output saturation voltage V

Ta= 25°C

Ta= –20°C

CE(sat)

(V)

Duty Cycle-Collector Characteristics

500

(M63836GFP)

1

400

2

300

1

200

•The collector
cu

rrent values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Vcc = 3V •Ta = 25°C

0

0 10020 40 60 80

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

(M63836KP)

400

300

200

•

The collector
current values

Collector current Ic (mA)

represent the

100

current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the value of the
simultaneously-operated circuit.

0

0

Duty cycle (%)

•

Vcc = 3V •Ta = 25°C

3
4

5
6

7

8

200

•

The collector
current values

Collector current Ic (mA)

represent the

100

current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the value of the
simultaneously-operated circuit.

0

0

•

Vcc = 3V •Ta = 85°C

2
3

4

5

6

7

8

10020 40 60 80

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

400

1

2

3
4

5

6

7

8

10020 40 60 80

300

200

Collector current Ic (mA)

100

0

0

(M63836KP)

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle

represents the value
of the simultaneously­operated circuit.

•Vcc = 3V

•Ta = 85°C

1

2
3
4

5

6

7

8

10020 40 60 80

Duty cycle (%)

Sep. 2001

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

DC Amplification Factor

Collector Current Characteristics

5

10

7

VCE=2V

5

3

FE

2

4

10

7
5

3
2

3

10

7
5

DC amplification factor h

3
2

2

10

1

10

3257

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63836FP/KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Output Current Characteristics

500

VCE=2V

Ta=85°C

2

10

Ta =–40°C

Ta=25°C

3257

3

10

400

(mA)

C

300

200

Collector current I

100

0

0 0.4 0.8 1.2 2.01.6

Ta=85°C

Ta=25°C

Ta =–40°C

–0.6

VCC=3V

–0.5

–0.4

(mA)

I

–0.3

–0.2

Input Current I

–0.1

0

Clamping Diode Characteristics

500

400

(mA)

F

300

C

Collector current I

(mA)

Input Characteristics

Ta=85°C

Ta=25°C

Ta =–40°C

1023

Input voltage Vcc-V

I

(V)

Input voltage Vcc-V

I

(V)

Driver Supply Characteristics

20.0

VI=0.5V

16.0

12.0

8.0

Supply Current Icc (mA)

4.0

0

0246810

Ta=25°C

Ta =–40°C

Supply voltage Vcc (V)

Ta=85°C

200

100

Forward bias current I

Ta=85°C

0

0 0.5 1.0 1.5 2.0

Forward bias voltage V

Ta=25°C

Ta =–40°C

F

(V)

Sep. 2001