Datasheet M63834FP, M63834KP Datasheet (MITSUBISHI)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63834FP/KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

DESCRIPTION

The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP
and 16 NPN transistors connected to from eight high current
gain driver pairs.

FEATURES

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (IC(max) = 500mA)

●

3V micro computer compatible input

●

“L” active level input

●

With input diode

●

Wide operating temperature range (Ta = –40 to +85°C)

APPLICATION

Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.

FUNCTION

The M63834GP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage micro­computer series. A resistor of 3.5kΩ is connected between
the input and the base of PNP transistors. The input diode is
intended to prevent the flow of current from the input to the
Vcc. Without this diode, the current flows from “H” input to
the Vcc and the “L” input circuit is activated, in such a case
where one of the inputs of the 8 circuit is “H” and the other
are “L” to save power consumption. The diode is inserted to
prevent such mis-operation. The outputs are capable of driv­ing 500mA and are rated for operation with output voltage up
to 50V.

PIN CONFIGURATION

1

NC

2

IN1

3

IN2

4

IN3

5

INPUT OUTPUT

IN4

IN5

IN6

IN7

IN8

GND

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

20P2N-A(FP)

Package type

20P2E-A(KP)

CIRCUIT DIAGRAM

20K

INPUT

3.5K

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

1.05K

7.2K 3K

The eight circuits share the Vcc and GND

NC

O1

O2

O3

O4

O5

O6

O7

O8

V

CC

NC : No connection

V

OUTPUT

GND

Unit : Ω

CC

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCC

VCEO

IC

VI

Pd

Topr

Tstg

Supply voltage

Collector-emitter voltage

Collector current

Input voltage

Power dissipation

Operating temperature

Storage temperature

Output, H

Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

7

–0.5 ~ +50

500

CC

–0.5 ~ V

1.10(FP)/0.68(KP)

–40 ~ +85

–55 ~ +125

V

V

mA

V

W

°C
°C

Sep. 2001

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol

VCC Supply voltage

Collector current (Current per

C

I

1 circuit when 8 circuits are
coming on simultaneously)

VIH

VIL

“H” input voltage

“L” input voltage

Parameter

Duty Cycle
FP : no more than 4%
KP : no more than 2%

Duty Cycle
FP : no more than 15%
KP : no more than 6%

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V

II

ICC
hFE

✽ : Typical values are at Ta = 25°C

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current
Supply current (AN only Input)

DC amplification factor

CEO = 100µA

I

V

CC = 2.7V, VI = 0.5V, IC = 400mA
CC = 2.7V, VI = 0.5V, IC = 200mA

V

V

I = VCC-2.2V
CC = 3.6V, VI = 0.5V

V

V

CC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

M63834FP/KP

Limits

min typ max

2.7

V

CC-0.5

min typ max

50

—
—

—
—

2000

3.0

0

—

0

—

—
—

0

Limits

✽

—

1.15

0.93

–220

2.6

10000

3.6

400

200

VCC

VCC-2.2

—

2.4

1.6

–600

4.0

—

Unit

V

mA

V

V

V

V

µA

mA

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t

on

toff

NOTE 1 TEST CIRCUIT

Turn-on time

Turn-off time

INPUT

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω

V

I

= 0.5 ~ 2.7V
(2)Input-output conditions : R
(3)Electrostatic capacity C

at connections and input capacitance at probes

V

CC

Measured
device

L

= 30Ω, Vo = 10V, Vcc = 2.7V

L

includes floating capacitance

CL = 15pF (note 1)

V

O

R

L

OUTPUT

C

L

TIMING DIAGRAM

min typ max

—

—

INPUT

50% 50%

OUTPUT

50% 50%

ton toff

Limits

120

4500

—

—

ns

ns

Sep. 2001

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63834FP/KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

Thermal Derating Factor Characteristics

2.0

1.5

M63834FP

1.10

1.0

M63834KP

0.68

0.5

Power dissipation Pd(max) (W)

0

0 25 50 75 85 100

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

500

(M63834FP)

400

300

0.572

0.354

Output Saturation Voltage

Collector Current Characteristics

500

Vcc=2.7V

I

=0.5V

V

400

300

200

Collector current Ic (mA)

100

Ta=85°C

0

0

0.5

Output saturation voltage V

Ta=25°C

Ta =–20°C

1.0 1.5 2.0

CE(sat)

(V)

Duty Cycle-Collector Characteristics

500

(M63834FP)

1

400

2

300

1

200

•The collector
current values represent

Collector current Ic (mA)

the current per circuit.

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Vcc = 3V •Ta = 25°C

0

0 20 40 60 80 100

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

(M63834KP)

400

300

200

•

The collector
current values
represent the

100

Collector current Ic (mA)

current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the value of the
simultaneously-operated circuit.

0

0 20 40 60 80 100

•

Vcc = 3V •Ta = 25°C

Duty cycle (%)

3
4

5
6

7

8

200

•

The collector
current values

Collector current Ic (mA)

represent the

100

current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the value of the
simultaneously-operated circuit.

0

0 20 40 60 80 100

•

Vcc = 3V •Ta = 85°C

2

3
4

5

6

7

8

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

400

1

2

3
4

5

6

7

8

300

200

100

Collector current Ic (mA)

0

0 20 40 60 80 100

(M63834KP)

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents

the value of the
simultaneously-operated circuit.

•Vcc = 3V

•Ta = 85°C

1

2
3
4

5

6

7

8

Duty cycle (%)

Sep. 2001

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

DC Amplification Factor

Collector Current Characteristics

5

10

7

VCE=2V

5

3

FE

2

4

10

7
5

3
2

3

10

7
5

DC amplification factor h

3
2

2

10

1

10

3257

Ta=85°C

2

10

Ta =–40°C

Ta=25°C

3257

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63834FP/KP

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

Output Current Characteristics

500

VCE=2V

400

(mA)

C

300

200

Collector current I

100

3

10

0

0 0.4 0.8 1.2 2.01.6

Ta=85°C

Ta=25°C

Ta =–40°C

C

Collector current I

(mA)

Input Characteristics

–0.6

VCC=3V

–0.5

–0.4

(mA)

I

–0.3

Ta=85°C

–0.2

Input Current I

–0.1

Ta=25°C

Ta =–40°C

0

0123

Input voltage Vcc-V

I

(V)

Input voltage Vcc-V

I

(V)

Driver Supply Characteristics

20.0

VI=0.5V

16.0

12.0

8.0

Supply Current Icc (mA)

4.0

0

0246810

Ta=25°C

Ta =–40°C

Supply voltage Vcc (V)

Ta=85°C

Sep. 2001