Datasheet M63823P, M63823FP, M63823GP Datasheet (MITSUBISHI)

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION

M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir­cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex­tremely low input-current supply.
Production lineup has been newly expanded with the addi­tion of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.

FEATURES

●

Three package configurations (P, FP and GP)

● Pin connection Compatible with M54523P and M54523FP

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (IC(max) = 500mA)

●

With clamping diodes

●

PMOS Compatible input

●

Wide operating temperature range (Ta = –40 to +85 °C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and MOS-bipolar logic IC inter­faces

FUNCTION

The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kΩ between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en­abling space-saving design.

PIN CONFIGURATION

IN1→

1

IN2→

2

IN3→

3

IN4→
IN5→
IN6
IN7→
GND

4
5

→

6

7
8

INPUT OUTPUT

→

16

O1

→

15

O2

→

14

O3

→

13

O4

→

12

O5

→O6

11

→O7

10

→COM COMMON

9

16P4(P)
16P2N-A(FP)
16P2S-A(GP)Package type

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

2.7k

7.2k

3k

The seven circuits share the COM and GND

COM
OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI
IF
VR
Pd
Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +50

500

–0.5 ~ +30

500

50

1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85

–55 ~ +125

V

mA

V

mA

V

W

°C
°C

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

3.4

Limits

0

—

0

—

50

400

V

mA

0

—

—
—
—

0

200

25
25

0.6

V
V

Symbol Unit

Parameter

min typ max

VO Output voltage

Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%

Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%

C ≤ 400mA

I

C ≤ 200mA

I

3.85

IC

VIH
VIL

Collector current
(Current per 1 cir­cuit when 7 circuits
are coming on si­multaneously)

“H” input voltage
“L” input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V

II
VF
IR
hFE

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor

I

CEO = 100µA
I = 500µA, IC = 350mA

I

I = 350µA, IC = 200mA

I

I = 250µA, IC = 100mA

I

I = 3.85V

V

F = 350mA

I

R = 50V

V

CE = 4V, IC = 350mA

V

M63823P/FP/GP

Limits

min typ max

50
—
—
—
—
—
—

1000

—

1.2

1.0

0.9

0.9

1.4

—

2000

—

1.6

1.3

1.1

1.4

2.0

100

—

V

V

mA

V
µA
—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

NOTE 1 TEST CIRCUIT

Turn-on time
Turn-off time

INPUT

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω

P = 3.85VP-P

V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity C

at connections and input capacitance at probes

OPEN

L includes floating capacitance

CL = 15pF (note 1)

Vo

RL

OUTPUT

L

C

TIMING DIAGRAM

INPUT

OUTPUT

min typ max

50%

ton toff

Limits

—
—

15

350

50%

ns

—

ns

—

50%50%

Jan. 2000

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

2.0

M63823P

1.5

M63823FP

1.0

M63823GP

0.5

Power dissipation Pd(max) (W)

0

0 25 50 75 85 100

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

500

(M63823P)

400

300

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequencyy ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80

0.744

0.520

0.418

100

Output Saturation Voltage

Collector Current Characteristics

500

II = 500µA

400

300

200

Collector current Ic (mA)

100

Ta = 85°C

0

0

0.5

Output saturation voltage V

Ta = 25°C

Ta = –40°C

1.0 1.5 2.0

CE(sat)

(V)

Duty Cycle-Collector Characteristics

1

500

(M63823P)

400

2

1

300

3
4

5
6
7

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

100

2

3
4
5
6
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

(M63823FP)

400

300

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80

0

Duty cycle (%)

100

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

1

400

300

2

3
4

5

6

7

200

•

The collector current values

Collector current Ic (mA)

100

represent the current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the
value of the simultaneously-operated circuit.

0

0

(M63823FP)

20 40 60 80

•

Ta = 85°C

100

1

2
3

4
5

6

7

Duty cycle (%)

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Duty Cycle-Collector Characteristics

500

(M63823GP)

400

300

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80

0

Duty cycle (%)

DC Amplification Factor

Collector Current Characteristics

4

10

VCE = 4V

7

FE

DC amplification factor h

10

10

5
3
2

3

7
5

3
2

2

1

2 3 57 2 3 57

10

Ta = 85°C

10

2

Ta = –40°C

Ta= 25°C

10

100

Duty Cycle-Collector Characteristics

500

(M63823GP)

400

1

300

100

1

2
3

4

5

6

7

2

3
4

5

6

7

Collector current Ic (mA)

200

•

The collector current values

100

represent the current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the
value of the simultaneously-operated circuit.

0

20 40 60 80

0

•Ta = 85°C

Duty cycle (%)

Grounded Emitter Transfer Characteristics

500

400

300

200

Ta = 85°C

Collector current Ic (mA)

100

3

0

0

1 234

Ta = 25°C

Ta = –40°C

5

Collector current IcC (mA)

16

12

(mA)

I

8

Input Current I

4

0

0510

Input Characteristics

Ta = –40°C

Ta = 25°C

15 25

I

Input voltage V

(V)

Ta = 85°C

20

Clamping Diode Characteristics

500

400

(mA)

F

300

200

100

Forward bias current I

0

Ta = 85°C

0

Forward bias voltage V

Input voltage V

0.5

1.0 1.5 2.0

I

(V)

Ta = 25°C
Ta = –40°C

F

(V)

Jan. 2000