Datasheet M63815P, M63815FP, M63815KP Datasheet (MITSUBISHI)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63815P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M63815P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis­tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.

FEATURES

●

Three package configurations (P, FP, and KP)

●

Medium breakdown voltage (BVCEO ≥ 35V)

●

Synchronizing current (IC(max) = 300mA)

●

With clamping diodes

●

With zener diodes

●

Low output saturation voltage

●

Wide operating temperature range (Ta = –40 to +85 °C)

APPLICATION

Driving of digit drives of indication elements (LEDs and
lamps) with small signals

FUNCTION

The M63815P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be­tween each output pin (collector) and COM pin. The transis­tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi­mum of 35V voltage can be applied between the collector
and emitter.

PIN CONFIGURATION

1

IN1→

→

IN2

2

→

3

IN3

→

4

IN4

INPUT

→

5

IN5

→

613

IN6

→

IN7

7
8

→

IN8
GND

9

Package type

1

→

2

IN1

→

IN2

3

→

4

IN3

→

5

IN4

INPUT OUTPUT

IN5
IN6
IN7
IN8

GND

→

6

→

7

→

8

→

9

10

18

17
16

15
14

12
11
10

18P4G(P)

20

19

18
17

16

15

14

13
12

11

20P2N-A(FP)

Package type

CIRCUIT DIAGRAM

20P2E-A(KP)

→

O1

→

O2

→

O3

→

O4

OUTPUT

→

O5

→

O6

→

O7

→

O8

→COM

COMMOM

NCNC

→

O1

→

O2

→

O3

→

O4

→

O5

→

O6

→

O7

→

O8

→

COMMOM

COM

NC : No connection

COM
OUTPUT

Vz=7V

INPUT

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

10.5K
10K

GND

The eight circuits share the COM and GND.

Unit: Ω

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI
IF
VR

Pd

Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage

Power dissipation

Operating temperature
Storage temperature

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol UnitParameter Test conditions

VO V0

C

I

VIN Input voltage

Output voltage
Collector current

(Current per 1 cir­cuit when 8 circuits
are coming on si­multaneously)

M63815P

M63815FP

M63815KP

Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%

8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Output, H
Current per circuit output, L

M63815P
Ta = 25°C, when mounted
on board

M63815FP

M63815KP

M63815P/FP/KP

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +35

300

–0.5 ~ +35

300

35

1.79

1.10

0.68

–40 ~ +85

–55 ~ +125

Limits

min typ max

—
0
0
0
0
0
0
0

—

—

—

—

—

—

—

250
170
250
130
250
100

mA

mA

35

mA

30

V

V

V

W

°C
°C

V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V
VIN(on)

VF
IR
hFE

Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage

Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor

I

CEO = 10µA
IN = 1mA, IC = 10mA

I

IN = 2mA, IC = 150mA

I

IN = 1mA, IC = 10mA

I

F = 250mA

I
V
V

R = 35V
CE = 10V, IC = 10mA

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

Turn-on time
Turn-off time

CL = 15pF (note 1)

Limits

min typ max

35
—
—
13
—
—
50

min typ max

—
—

—

—

—

19

1.2
—
—

Limits

140
240

—

0.2

0.8
23

2.0
10
—

—
—

V
V

V

V
µA
—

ns
ns

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63815P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

NOTE 1 TEST CIRCUIT

INPUT

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C

connections and input capacitance at probes

TYPICAL CHARACTERISTICS

Thermal Derating Factor Characteristics

2.0

M63815P

1.5

M63815FP

1.0

M63815KP

0.5

Power dissipation Pd (W)

Vo

R

C

IH

L

OUTPUT

L

= 18V

0.931

0.572

0.354

OPEN

L

= 220Ω, Vo = 35V

L

includes floating capacitance at

TIMING DIAGRAM

50%

INPUT

OUTPUT

(mA)

I

Input current I

50%

ton toff

4

3

2

1

50%

50%

Input Characteristics

Ta = –40°C

Ta = 25°C

Ta = 85°C

0

0

25 50 75 10085

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

(M63815P)

400

300

200

•The collector current values

100

Collector current Ic (mA)

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80

0

Duty cycle (%)

100

1~5
6
7
8

0

030252015105

Input voltage V

Duty Cycle-Collector Characteristics

(M63815P)

400

300

200

•The collector current values

100

represent the current per circuit.

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Duty cycle (%)

I

(V)

100

1~3

4
5

6
7

8

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63815P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

400

300

200

100

Collector current Ic (mA)

400

300

200

100

Collector current Ic (mA)

Duty Cycle-Collector Characteristics

(M63815FP)

•The collector current values

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80

Duty cycle (%)

Duty Cycle-Collector Characteristics

(M63815KP)

•The collector current values

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80

100

100

1~3
4

5
6
7
8

1~2

3
4

5
6

7

8

400

300

200

100

Collector current Ic (mA)

400

300

200

100

Collector current Ic (mA)

Duty Cycle-Collector Characteristics

(M63815FP)

•The collector current values

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Duty cycle (%)

Duty Cycle-Collector Characteristics

(M63815KP)

•The collector current values

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

100

100

1
2

3

4
5
6

7

8

1

2

3
4

5
6

7

8

Duty cycle (%)

Output Saturation Voltage

Collector Current Characteristics

250

200

Ta = 25°C
IB = 3mA

B

= 2mA

I

150

100

Collector current Ic (mA)

50

0

0 0.2 0.4 0.6 0.8

Output saturation voltage V

I

I

B

= 0.5mA

CE(sat)

B

= 1.5mA

I

B

= 1mA

(V)

Duty cycle (%)

Output Saturation Voltage

Collector Current Characteristics

100

Ta = 25°C

80

V

V

I

I

= 32V

= 28V

60

40

20

Collector current Ic (mA)

0

0 0.05 0.10 0.15 0.20

Output saturation voltage V

V

V

I

= 16V

V

V

I

= 12V

CE(sat)

I

= 24V

I

= 20V

(V)

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63815P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Output Saturation Voltage

Collector Current Characteristics

100

II = 2mA

80

Ta = –40°C

60

40

20

Collector current Ic (mA)

0

0 0.05 0.10 0.15 0.20

Output saturation voltage V

Grounded Emitter Transfer Characteristics

50

VCE = 4V

40

Collector current Ic (mA)

30

20

10

Ta = 25°C

Ta = 85°C

Ta = 25°C

Ta = 85°C

CE(sat)

Ta = –40°C

(V)

DC Amplification Factor

Collector Current Characteristics

3

10

V

CE

10V

7

Ta = 25°C

5

FE

3
2

2

10

7
5

3

DC amplification factor h

2

1

10

0

10

2357 2357

10

1

Collector current Ic (mA)

Grounded Emitter Transfer Characteristics

250

VCE = 4V

200

150

100

Ta = 85°C

Collector current Ic (mA)

50

2

10

23 57

Ta = 25°C

Ta = –40°C

10

3

0

02468 1210

Input voltage V

I

Clamping Diode Characteristics

250

200

(mA)

F

150

Ta = 85°C

100

Ta = 25°C

50

Forward bisa current I

0

0 0.4 0.8 1.2 1.6 2.0

Forward bias voltage V

(V)

Ta = –40°C

F

(V)

0

048121620

I

Input voltage V

(V)

Jan. 2000