Datasheet M63813P, M63813FP, M63813GP, M63813KP Datasheet (MITSUBISHI)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63813P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M63813P/FP/GP/KP are seven-circuit Single transistor ar­rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per­form high-current driving with extremely low input-current
supply.

FEATURES

●

Four package configurations (P, FP, GP and KP)

●

Medium breakdown voltage (BVCEO ≥ 35V)

●

Synchronizing current (IC(max) = 300mA)

●

With clamping diodes

●

Low output saturation voltage

●

Wide operating temperature range (Ta = –40 to +85 °C)

APPLICATION

Driving of digit drives of indication elements (LEDs and
lamps) with small signals

PIN CONFIGURATION

→

IN1

→

IN2

→

INz3

→

IN4

INPUT

→

IN5

→

IN6

→

IN7

GND

Package type

CIRCUIT DIAGRAM

INPUT

2.7k

→

16

1
2
3
4

5
611

7

8

O1

→

15

O2

→

14

O3

→

13

O4

12

→O5
→

O6

→

10

O7

9

→

COM COMMOM

OUTPUT

16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)

COM
OUTPUT

10k

GND

FUNCTION

The M63813P/FP/GP/KP each have seven circuits consist-

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

ing of NPN transistor. A spike-killer clamping diode is pro­vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI
IF
VR

Pd

Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage

Power dissipation

Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted
on board

The seven circuits share the COM and GND.

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +35

300

–0.5 ~ +35

300

35
M63813P
M63813FP
M63813GP
M63813KP

1.47

1.00

0.80

0.78

–40 ~ +85

–55 ~ +125

Unit: Ω

V

mA

V

mA

V

W

°C
°C

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63813P/FP/GP/KP

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol UnitParameter Test conditions

VO V0

IC

Output voltage

Collector current
(Current per 1 cir­cuit when 7 circuits
are coming on si­multaneously)

M63813P

M63813FP

M63813GP

M63813KP

Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%

VIN Input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V
VIN(on)

VF
IR
hFE

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor

I

CEO = 10µA
IN = 1mA, IC = 10mA

I

IN = 2mA, IC = 150mA

I

IN = 1mA, IC = 10mA

I

F = 250mA

I

R = 35V

V

CE = 10V, IC = 10mA

V

7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Limits

min typ max

—

0
0
0
0
0
0
0
0
0

—

—

—

—

—

—

—

—

—

35
250
160
250
130
250
120
250
120

20

Limits

min typ max

35
—
—

2.4
—
—
50

1.2

—
—
—
35

—
—

—

0.2

0.8

4.2

2.0
10
—

mA

V

V
V

V

V
µA
—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

NOTE 1 TEST CIRCUIT

Turn-on time
Turn-off time

INPUT

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C

connections and input capacitance at probes

OPEN

L

= 220Ω, Vo = 35V

L

includes floating capacitance at

CL = 15pF (note 1)

Vo

R

L

OUTPUT

L

C

IH

= 3V

TIMING DIAGRAM

INPUT

OUTPUT

50%

ton toff

Limits

min typ max

—
—

125
250

—
—

50%

ns
ns

50%50%

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63813P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

2.0

M63813P

1.5

M63813FP

1.0

M63813GP
M63813KP

0.5

Power dissipation Pd (W)

0

0 25 50 75 10085

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

(M63813P)

400

300

200

•The collector current values

100

Collector current Ic (mA)

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80

0

0.744

0.520

0.418

0.406

100

1~4
5

6
7

Input Characteristics

8

Ta = –40°C

6

(mA)

I

4

Input current I

2

0

02015105

Input voltage V

Duty Cycle-Collector Characteristics

(M63813P)

400

300

200

•The collector current values

100

represent the current per circuit.

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Ta = 25°C

Ta = 85°C

I

(V)

100

1~2

3
4
5

6
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

400

(M63813FP)

300

200

•The collector current values

100

Collector current Ic (mA)

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80

0

Duty cycle (%)

100

1~3

4
5
6
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

400

(M63813FP)

300

200

•The collector current values

represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Duty cycle (%)

100

1

2

3
4

5
6
7

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63813P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Duty Cycle-Collector Characteristics

400

(M63813GP/KP)

300

200

•The collector current values

100

Collector current Ic (mA)

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80

Duty cycle (%)

Output Saturation Voltage

Collector Current Characteristics

250

Ta = 25°C
IB = 3mA

200

150

100

Collector current Ic (mA)

50

IB = 2mA

I

B

= 0.5mA

I

B

= 1.5mA

I

B

= 1mA

100

1~2

3
4

5
6
7

Duty Cycle-Collector Characteristics

400

(M63813GP/KP)

300

200

•The collector current values

100

Collector current Ic (mA)

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Duty cycle (%)

Output Saturation Voltage

Collector Current Characteristics

100

Ta = 25°C

80

V

I

V

I

= 6V

= 7V

60

40

20

Collector current Ic (mA)

V

V

I

= 2V

I

= 3V

VI = 5V

V

I

= 4V

100

1

2

3
4
5

6

7

0

0 0.2 0.4 0.6 0.8

Output saturation voltage V

Output Saturation Voltage

Collector Current Characteristics

100

II = 2mA

80

Ta = –40°C

60

40

20

Collector current Ic (mA)

0

0 0.05 0.10 0.15 0.20

Output saturation voltage V

CE(sat)

Ta = 25°C

Ta = 85°C

CE(sat)

(V)

(V)

0

0 0.05 0.10 0.15 0.20

Output saturation voltage V

DC Amplification Factor

Collector Current Characteristics

3

10

VCE 10V

7

Ta = 25°C

5

FE

3
2

2

10

7
5

3

DC amplification factor h

2

1

10

0

2357 2357

10

10

1

10

Collector current Ic (mA)

CE(sat)

2

23 57

(V)

10

3

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63813P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

Grounded Emitter Transfer Characteristics

50

VCE = 4V

40

Ta = 25°C

Ta = 85°C

0 0.4 0.8 1.2 1.6 2.0

Input voltage V

I

Collector current Ic (mA)

30

20

10

0

Clamping Diode Characteristics

250

200

(mA)

F

150

Ta = 85°C

Ta = –40°C

(V)

Grounded Emitter Transfer Characteristics

250

VCE = 4V

200

Ta = 85°C

150

Ta = 25°C

100

Collector current Ic (mA)

50

0

012345

Input voltage V

Ta = –40°C

I

(V)

100

Ta = 25°C

50

Forward bisa current I

0

0 0.4 0.8 1.2 1.6 2.0

Forward bias voltage V

Ta = –40°C

F

(V)

Jan. 2000