Datasheet M58WR064ET, M58WR064EB Datasheet (SGS Thomson Microelectronics)

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64 Mbit (4Mb x 16, Multiple Bank, Burst)

FEATURES SUMMARY

■ SUPPLY VOLTAGE

= 1.65V to 2.2V for Program, Erase and

–V

Read –V –V

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read

– Random Access: 70, 80, 100 ns

■ PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bott o m location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up – Any combination of blocks can be locked –WP

■ SECURITY

– 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

= 1.65V to 3.3V for I/O Buffers

DDQ

= 12V for fast Program (optional)

mode

others

for Block Lock-Down

M58WR064ET

M58WR064EB

1.8V Supply Flash Memory

Figure 1. Package

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h – Top Device Code, M58WR064ET: 8810h – Bottom Device Code, M58WR064EB: 8811h

1/82February 2003

M58WR064ET, M58WR064EB

SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 3. VFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 2. Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 4. Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Address Inputs (A0-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Latch Enable (L). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Clock (K).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Wait (WAIT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

DDQ

Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

SSQ

BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Address Latch.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Table 3. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Table 4. Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

COMMAND INTERFACE - STANDARD COMMANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Read Array Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Read Electronic Signature Comma nd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Clear Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Program/Erase Suspend Comm and . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/82

M58WR064ET, M58WR064EB

Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Set Configuration Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Block Lock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Block Unlock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Block Lock-Down Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Table 5. Standard Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 6. Electronic Signature Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 5. Security Block and Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS. . . . . . . . . . . . . . . . . . . . . . . . . 18

Bank Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Quadruple Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Enhanced Factory Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Program Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Exit Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Quadruple Enhanced Factory Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Load Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Program and Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Exit Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Table 7. Factory Program Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

STATUS REGISTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Program/Erase Controller Status Bit (SR7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Erase Suspend Status Bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Erase Status Bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Program Status Bit (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Status Bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Program Suspend Status Bit (SR2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

Block Protection Status Bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Bank Write/Multiple Word Program Status Bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 8. Status Register Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

CONFIGURATION REGISTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5

Read Select Bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

X-Latency Bits (CR13-CR11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Wait Polarity Bit (CR10). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Data Output Configuration Bit (CR9). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Wait Configuration Bit (CR8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Burst Type Bit (CR7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Valid Clock Edge Bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Wrap Burst Bit (CR3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Burst length Bits (CR2-CR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 9. Configuration Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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M58WR064ET, M58WR064EB

Table 10. Burst Type Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Figure 6. X-Latency and Data Output Configuration Exampl e . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 7. Wait Configuration Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29

READ MODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Asynchronous Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Synchronous Burst Read Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Single Synchronous Read Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31

DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 11. Dual Operations Allowed In Other Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 12. Dual Operations Allowed In Same Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

BLOCK LOCKING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Lock-Down State. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Table 13. Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 14. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . 34

MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Table 15. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Table 16. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 8. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 9. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Table 17. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Table 18. DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Table 19. DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38

Figure 10. Asynchronous Random Access Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . 39

Figure 11. Asynchronous Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40

Table 20. Asynchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Figure 12. Synchronous Burst Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Figure 13. Single Synchronous Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Figure 14. Clock input AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

Table 21. Synchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

Figure 15. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 22. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Figure 16. Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Table 23. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48

Figure 17. Reset and Power-up AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Table 24. Reset and Power-up AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

4/82

M58WR064ET, M58WR064EB

PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

Figure 18. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch , Bottom View Package Out line. . . 50

Table 25. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Packa ge Mechan ical Data . . . . . . 50

Figure 19. VFBGA56 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 51

Figure 20. VFBGA56 Daisy Chain - PCB Connection Proposal (Top view through package) . . . . 52

PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Table 26. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Table 27. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 28. Top Boot Block Addresses, M58WR064ET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 29. Bottom Boot Block Addresses, M58WR064EB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

APPENDIX B. COMMON FLASH INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 30. Query Structure Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Table 31. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Table 32. CFI Query System Interface Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Table 33. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59

Table 34. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

Table 35. Protection Register Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61

Table 36. Burst Read Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 37. Bank and Erase Block Region Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 38. Bank and Erase Block Region 1 Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Table 39. Bank and Erase Block Region 2 Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Figure 21. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Figure 22. Double Word Program Flowchart and Pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . 66

Figure 23. Quadruple Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . 67

Figure 24. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 68

Figure 25. Block Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

Figure 26. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 70

Figure 27. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Figure 28. Protection Register Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . 72

Figure 29. Enhanced Factory Program Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73

Enhanced Factory Program Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Figure 30. Quadruple Enhanced Factory Program Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Quadruple Enhanced Factory Program Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

APPENDIX D. COMMAND INTERFACE STATE TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

Table 40. Command Interface States - Modify Table, Next State. . . . . . . . . . . . . . . . . . . . . . . . . . 77

Table 41. Command Interface States - Modify Table, Next Output. . . . . . . . . . . . . . . . . . . . . . . . . 78

Table 42. Command Interface States - Lock Table, Next State . . . . . . . . . . . . . . . . . . . . . . . . . . .79

Table 43. Command Interface States - Lock Table, Next Output . . . . . . . . . . . . . . . . . . . . . . . . . . 80

REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

Table 44. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .81

5/82

M58WR064ET, M58WR064EB

SUMMARY DESCRIPTION

The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V V supply for the circuitry and a 1.65V to 3.3V V supply for the Input/Output pins. An opt ional 12V V

power supply is provided to speed up custom-

er programming. The device features an asymmet rical block archi-

tecture. M58WR06 4E has a n array of 135 blocks, and is divided into 4 Mbit banks. There are 15 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 parameter blocks of 4 KWords and 7 m ain blocks of 32 KWords. The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2, and the memory maps are shown in Figure 4. The Parameter Blocks are located at the top of the memory address space for the M58WR064ET, and at the bottom for the M58WR064EB.

Each block can be erased separately. Erase can be suspended, in order to perform program in any other block, and then resum ed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage V

. There are two Enhanced Factory

programming commands available to speed up programming.

Program and Erase command s are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in t he Status Register. The command set required to

DDQ

control the memory is consistent with JEDEC standards.

The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 54MHz.

The device features an Aut oma tic Standby m ode. When the bus is inactive during Asynchronous Read operations, the device aut oma tically switches to the Automatic Standby m ode. In this condition the power consumption is reduced to the standby value I

and the outputs are still driven.

DD4

The M58WR064E features an instant, individual block locking scheme that allo ws any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP ≤ V

all blocks are protected against

PPLK

program or erase. All blocks are locked at PowerUp.

The device includes a Protection Register and a Security Block to increase the protec tion of a s ys-

tem’s design. The Protection Register is divided into two segments: a 64 bit segm ent containin g a unique device number written by ST, and a 128 bit segment One-Time-Programmable (OTP) by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Figure 5, shows the Security Block and Protection Register Memory Map.

The memory is offered in a VFBGA56, 7.7 x 9 mm

0.75 mm ball pitch package and is supplied with all the bits erased (set to ’1’).

6/82

M58WR064ET, M58WR064EB

Figure 2. Logic Diagram Table 1. Signal Names

A0-A21 Address Inputs

A0-A21

Data Input/Outputs, Command Inputs

Chip Enable Output Enable

DDQVPP

DQ0-DQ15

E G

DQ0-DQ15

W RP

M58WR064ET M58WR064EB

WAIT

WP KClock L WAIT Wait V

DDQ

SSQ

AI05587

V V

SSQ

Write Enable Reset Write Protect

Latch Enable

Supply Voltage Supply Voltage for Input/Output

Buffers Optional Supply Voltage for

Fast Program & Erase Ground Ground Input/Output Supply

NC Not Connected Internally

7/82

M58WR064ET, M58WR064EB

Figure 3. VFBGA Connections (To p view thro ugh packa ge)

87654321

C A2

D A1

A13

A15

DDQ

DQ7 V

A8A11

A9A12

A10

A14 WAIT A16 WP

DQ15

DQ14 DQ11 DQ10 DQ9 DQ0 G

SSQ

A20

A21

DQ6

DQ13

DQ5 V

K RP

L W

DQ4 DQ2 E A0

DQ12

DQ3

A18

DQ1

DDQ

A5A17

A7A19

DQ8

SSQ

Table 2. Bank Architecture

Number Bank Size Parameter Blocks Main Blocks

Parameter Bank 4 Mbits 8 blocks of 4 KWords 7 blocks of 32 KWords

Bank 1 4 Mbits - 8 blocks of 32 KWords Bank 2 4 Mbits - 8 blocks of 32 KWords Bank 3 4 Mbits - 8 blocks of 32 KWords

----

Bank 14 4 Mbits - 8 blocks of 32 KWords Bank 15 4 Mbits - 8 blocks of 32 KWords

8/82

----

AI06189

----

Figure 4. Me m ory Map

M58WR064ET, M58WR064EB

Bank 15

Bank 3

Bank 2

Bank 1

Parameter

Bank

M58WR064ET - Top Boot Block

Address lines A21-A0

000000h

007FFFh

038000h

03FFFFh

300000h

307FFFh

338000h

33FFFFh

340000h

347FFFh

378000h

37FFFFh

380000h

387FFFh

3B8000h

3BFFFFh

3C0000h

3C7FFFh

3F0000h 3F7FFFh 3F8000h

3F8FFFh

3FF000h

3FFFFFh

32 KWord

4 KWord

8 Main Blocks

7 Main Blocks

8 Parameter

Blocks

Parameter

Bank

Bank 1

Bank 2

Bank 3

Bank 15

M58WR064EB - Bottom Boot Block

Address lines A21-A0

000000h

000FFFh

007000h

007FFFh

008000h

00FFFFh

038000h

03FFFFh

040000h

047FFFh

078000h

07FFFFh

080000h

087FFFh

0B8000h 0BFFFFh 0C0000h

0C7FFFh

0F8000h

0FFFFFh

3C0000h

3C7FFFh

3F8000h

3FFFFFh

4 KWord

4KWord

32 KWord

8 Parameter

Blocks

7 Main Blocks

8 Main Blocks

AI06971b

9/82

M58WR064ET, M58WR064EB

SIGNAL DESCRIPTIONS

See Figure 2 Logic Diagram and Table 1,Signal Names, for a brief overview of the signals connected to this device.

Address Inputs (A0-A21). The Address Inputs select the cells i n the memory array to a ccess during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine.

Data Input/Output (DQ0-DQ15). The Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Bus Write operation.

Chip Enable (E

vates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is

and Reset is at VIH the device is in active

at V

mode. When Chi p E nable i s at V deselected, the outputs are high impedan ce and the power consumption is reduced to the stand-by level.

Output Enable (G

data outputs during the Bus Read operation of the memory.

Write Enable (W

Bus Write operation of the memory’s Command Interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable whichever occurs first.

Write Protect (WP

that gives an additional hardware protection for each block. When Write Protect is at V Down is enabled and the prote ction status of t he Locked-Down blocks cannot be changed. When Write Protect is at V and the Locked-Down blocks can be locked or unlocked. (refer to Table 13, Lock Status).

Reset (RP

ware reset of the memory. W hen Reset is at V the memory is in reset mode: the outputs are high impedance and the current consumption is reduced to the Reset Supply Current I Table 2, DC Characteristics - Currents for the value of I

DD2.

state and the Configuration Register is reset. When Reset is at V eration. Exiting reset mode the device enters asynchronous read mod e, but a negative transition of Chip Enable or Lat ch E nable is required to ensure valid data outputs.

The Reset pin can be interfaced with 3V logic without any additional circuitry . It can be tied to V (refer to Table 19, DC Characteristics).

Latch Enable (L

dress bits on its rising edge. The address latch is transparent when Latch Enable is at

). The Chip Enable input acti-

the memory is

). The Output Enable controls

). The Write Enable controls the

). Write Protect is an input

, the Loc k-

, the Lock-Down is disabled

). The Reset input provides a hard-

. Refer to

DD2

After Reset all blocks are in the Locked

, the device is in normal op-

RPH

). Latch Enable l atches the ad -

and it is inhibited whe n Latch Enable is at

. Latch Enable can be kept Low (also at

board level) when t he Latch Enable func tion is not required o r sup ported.

Clo c k (K). The clock input synchronizes the memory to the microcontroller during synchronous read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at V don't care during asynchronous read and in write operations.

Wait (WAIT). Wai t is an output signal used during synchronous read to indicate whether the dat a on the output bus are valid. This output is high impedance when Chip Enable is at V

or Reset is at VIL.

It can be configured to be active during the wait cycle or one clock cycle in advance. The WAIT signal is not gated by Output Enable.

Supply Voltage . VDD provides the power

supply to the internal core of the memory device. It is the main power supply for all operations (Read, Program and Erase).

Supply Voltage. V

DDQ

provides the power

DDQ

supply to the I/O pins and enables all Outputs to be powered independently from V tied to V

Program Supply Vol t age . VPP is both a

or can use a separate supply.

. V

control input and a power supply pin. The two functions are selected by the voltage range applied to the pin.

is kept in a low voltage range (0V to V

If V

is seen as a control input. In this case a volt-

age lower than V against program or erase, whi le V

gives an absolute protection

PPLK

ables these functions (see Tables 18 and 19, DC Characteristics for the relevant values). V sampled at the beginning of a program or erase; a change in its value after the operation has started does not have any effect and program or erase op-

erations continue.

is in the rang e of V

If V

supply pin. In this condition V

it acts as a power

PPH

must be stable un-

til the Program/Erase algorithm is completed.

Ground. VSS ground is the reference for t he

core supply. It must be connected to the system ground.

SSQ

Ground. V

ground is the reference for

SSQ

the input/output circuitry driven by V must be connected to V

Note: Each device in a system should have V

DD, VDDQ

and VPP decoupled wi th a 0.1 µF ce-

ramic capacitor close to the pin (high frequency, inherently low inductance capacitors should be as close as possible to the pack-

. Clock is

DDQ

> V

DDQ

can be

DDQ

en-

PP1

is only

. V

SSQ

)

10/82

M58WR064ET, M58WR064EB

age). See Figure 9, AC Measurement Load Circuit. The PCB trace widths should be sufficient

BUS OPERATIONS

There are six standard bus operations that control the device. These are Bus Read , Bus Write, Address Latch, Output Disable, Standby and Reset. See Table 3, Bus Operations, for a summary.

Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect Bus Write operations.

Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at V

in order to perform a

read operation. The Chip Enable input s hould be used to enable the device. Out put Enable should be used to gate data onto the output. The data read depends on the previous command written to the memory (see Command Interface section). See Figures 10, 1 1, 12 and 13 Read AC Waveforms, and Tables 20 and 21 Read AC Characteristics, for details of when the output becomes valid.

Bus Write. Bus Write operations write Commands to the memory or latch Input Data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at V Output Enable at V

. Commands, Input Data and

with

Addresses are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. The addresses can also be latched prior to the write operation by toggling Latc h Enable. In this case

to carry the re quired VPP program and erase currents.

the Latch Enable shoul d be t ied to V

during the

bus write operation. See Figures 15 and 16, Write AC Waveforms, and

Tables 22 and 23, Write AC Characteristics, for details of the timing requirements.

Address Latch. Address latch operations input valid addresses. Both Chip enable and Latch Enable must be at V

during address latch opera-

tions. The addresses are latched on the rising edge of Latch Enable.

Output Disa bl e . The outputs are high impedance when the Output Enable is at V

Standby. Standby di sables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by when Chip Enable and Reset are at V

. The pow-

er consumption is reduced to the stand-by level and the outputs are s et to high impedan ce, independently from the Output Enable or Write Enable inputs. If Chip Enable switches to V

during a pro-

gram or erase operation, the device enters Standby mode when finished.

Reset. During Reset mode the memory is deselected and the outputs are high impedance. The memory is in Reset mode when Reset is at V

The power consumption is reduced to the Standby level, independently from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to V

during a Program or Erase, this operation is

aborted and the memory content is no longer valid.

Table 3. Bus Operations

Operation E G W L RP

Bus Read Bus Write Address Latch

Output Disable Standby Reset X X X X

Note: 1. X = Don’t care.

2. L

can be tied to VIH if the valid address has been previo usly latched.

3. Depends on G

4. WAIT signal pol arity is conf i gured usi ng t he Set Confi guration Regi ster comm and.

XXX

(2)

WAIT

(4)

Hi-Z Hi-Z Hi-Z Hi-Z

DQ15-DQ0

Data Output

Data Input

Data Output or Hi-Z

Hi-Z

(3)

11/82

M58WR064ET, M58WR064EB

COMMAND INTERFACE

All Bus Write operations t o the me mory are in terpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution of the Program and Erase commands. The Program/Erase Controller provides a S tatus Register whose output may be read at any ti me to monitor the progress or the result of the operation.

The Command Interface is reset to read mode when power is first applied, when exiting from Reset or whenever V

is lower than V

mand sequences must be followed exactly. Any invalid combination of commands will be ignored.

Refer to Table 4, Command Codes and Appendix D, Tables 40, 41, 42 and 43, Command I nterface States - Modify and Lock Tables, for a summary of the Command Interface.

The Command Interface is split into two type s of commands: Standard commands and Factory Program commands. The following sections explain in detail how to perform each command.

LKO

. Com-

Table 4. Command C odes

Hex Code Command

01h Block Lock Confirm 03h Set Configuration Register Confirm 10h Alternative Program Setup 20h Block Erase Setup 2Fh Block Lock-Down Confirm 30h Enhanced Factory Program Setup 35h Double Word Program Setup 40h Program Setup 50h Clear Status Register 56h Quadruple Word Program Setup

60h

70h Read Status Register

75h

80h Bank Erase Setup

Block Lock Setup, Block Unlock Setup, Block Lock Down Setup and Set Configuration Register Setup

Quadruple Enhanced Factory Program Setup

90h Read Electronic Signature 98h Read CFI Query B0h Program/Erase Suspend

C0h Protection Register Program

Program/Erase Resume, Block Erase

D0h

FFh Read Array

Confirm, Bank Erase Confirm, Block Unlock Confirm or Enhanced Factory Program Confirm

12/82

COMMAND INTERFACE - STANDARD COMMANDS

The following commands are the basic commands used to read, write to and configure the device. Refer to Table 5, Standard Commands, in conjunction with the following text descriptions.

Read Array Command

The Read Array comm and returns the addressed bank to Read Array mode. One Bus Write cycle is required to issue the Read Array command and return the addressed bank to Read Array mode. Subsequent read operations will read the addressed location and output t he data. A Read Array command can be issued in one bank while programming or erasing in another bank. However if a Read Array command is issued to a bank currently executing a Program or Erase operation the command will be e xecuted but t he output da ta is not guaranteed.

Read Status Register Command

The Status Register indi cates when a Program or Erase operation is complete and the success or failure of operation itself. Issue a Read Status Register command to read the Status Register content. The Read Status Register com man d c an be issued at any time, even during Program or Erase operations.

The following read operations output the content of the Status Register of the addressed bank. The Status Register is latched on the falling edge of E or G signals, and can be read until E or G returns

. Either E or G must be toggled to update the

to V

latched data. See Table 8 for the description of the Status Register Bits. This mode supports asynchronous or single synchronous reads only.

Read Electronic Signature Command

The Read Electronic Signature command reads the Manufacturer and Device Codes, the Block Locking Status, the Protection Register, and the Configuration Register.

The Read Electronic Signature command consists of one write cycle to an address within one o f the banks. A subsequent Read ope ra tion in the same bank will output the Manufacturer Code, the Device Code, the protection Status of the blocks in the targeted bank, the Protection Register, or the Configuration Register (see Table 6).

If a Read Electronic Signature command is issued in a bank that is executing a Program or Erase operation the bank will go into Read Electronic Signature mode, subsequent Bus Read cycles will output the Electronic Sign ature data an d the Pr ogram/Erase controller will continue t o program or erase in the background. This mode supports asynchronous or single synchronous reads only, it does not support page mode or synchronous burst reads.

M58WR064ET, M58WR064EB

Read CFI Query Command

The Read CFI Query command is used to read data from the Common Flash Interface (CFI). The Read CFI Query Command consists of one Bus Write cycle, to an address within one of the banks. Once the command is issued subsequent Bus Read operations in the s ame bank read from the Common Flash Interface.

If a Read CFI Query command is issued in a bank that is executing a Program or Erase operation the bank will go into Read CFI Query mo de, subsequent Bus Read cycles will output the CFI data and the Program/Erase con troller will continue to Program or Erase in the background. This m ode supports asynchronous or single synchronous reads only, it does not support page mode or synchronous burst reads.

The status of the other banks is not affected by the command (see Table 11). After issuing a Read CFI Query command, a Read Array command should be issued to t he address ed bank to return the bank to Read Array mode.

See Appendix C, Common Flash Interface, Tables 30, 31, 32, 33, 34, 36, 37, 38 and 39 for details on the information contained in the Common Flash Interface memory area.

Clear Status Register Command

The Clear Status Register comm and c an b e us ed

to reset (set to ‘0’) error bits 1, 3, 4 and 5 in the Status Register. One bus write cycle is required to issue the Clear Status Register command. The Clear Status Register com man d do es not c ha nge the Read mode of the bank.

The error bits in the Status Regi ster do not automatically return to ‘0’ when a new command is issued. The error bits i n the Stat us Register should be cleared before attempting a new Program or Erase command.

Block Erase Command

The Block Erase com mand can be used to erase a block. It sets all the bits within the selected block to ’1’. All previous d ata in th e block is lost. If th e block is protected then the Erase operation will abort, the data in the block will not be changed and the Status Register will output the error. The Block Erase command can be issued at any moment, regardless of whether the block has been programmed or not.

Two Bus Write cycles are required to issue the command.

■ The first bus cycle sets up the Erase command.

■ The second latches the block address in the

internal state machine and starts the Program/ Erase Controller.

13/82

M58WR064ET, M58WR064EB

If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits 4 and 5 are set and the command aborts. Erase aborts if Reset turns to

. As data integrity cannot be guaranteed when

the Erase operation is aborted, the block must be erased again.

Once the command is issued the device outputs the Status Register data when any address within the bank is read. At the end o f the operation the bank will remain in Read Status Register mode until a Read A rray, Read CFI Query o r Read Electronic Signature command is issued.

During Erase operations the bank containing the block being erased will only accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend command, all other commands will be ignored. Refer to Dual Operations section for detailed information about simultaneous operations allowed in banks not being e rased. Typical Erase times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

See Appendix C, Figure 25, Block Erase Flowchart and Pseudo Code, for a suggested flowchart for using the Block Erase command.

Program Command

The memory array can be programmed word-byword. Only one Word in one bank can be programmed at any one time. Two bus write cycles are required to issue the Program Command.

■ The first bus cycle sets up the Program

command.

■ The second latches the Address and the Data to

be written and starts the Program/Erase Controller.

After programming has started, read operations in the bank being programmed output the Status Register content.

During Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend command. Refer to Dual Operations section for detailed information about simultaneous operations allowed in banks not bei ng programmed. Typical Program times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles .

Programming aborts if Reset goe s to V

. As data

integrity cannot be guaranteed when the program operation is aborted, the memory location must be reprogrammed.

See Appendix C, Figure 21, Program Flowchart and Pseudo Code, for the f lowchart for using the Program command.

Program/Erase Suspend Command

The Program/Erase Suspend command is used to pause a Program or Block Erase operation. A Bank Erase operation cannot be suspended.

One bus write cycle is required to issue t he Program/Erase command. O nce the Program/Erase Controller has paused bits SR7, SR6 and/ or SR2

of the Statu s Regist er will be s et to ‘1’. Th e command can be addressed to any bank.

During Program/Erase Suspend the Command Interface will accept the Program/Erase Resume, Read Array (cannot read the erase-suspended block or the program-suspended Word), Read Status Register, Read Electronic Signature and Read CFI Query commands. Additionally, if the suspend operation was E rase then the Clear status Register, Program, Block Lock, Block LockDown or Block Unlock commands will also be accepted. The block being erased may be protected by issuing the Block Lock, Block Lock-Down or Protection Register Program commands. Only the blocks not being erased may be read or programmed correctly. When the Program/Erase Resume command is issued the operation will complete. Refer to the Dual Operations section for detailed information about simultaneous operations allowed during Program/Erase Suspend.

During a Program/Erase Suspend, the device can be placed in standby mode by taking Chip Enable

. Program/Erase is aborted if Reset turns to

to V

See Appendix C, Figure 24 , Program Suspend & Resume Flowchart and Pseudo Code, and Figure 26, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/ Erase Suspend command.

Program/Erase Resu me Command

The Program/Erase Resume command can be used to restart the Program/Erase Controller after a Program/Erase Suspen d command has paused it. One Bus Write cycle is required to issue the command. The command can be written to any address.

The Program/Erase R esume command d oes not change the read m ode of the banks. If the s uspended bank was in Read Status Register, Read Electronic signature or Read CFI Query mode the bank remains in that m ode and outputs the corresponding data. If the bank was in Read Array mode subsequent read operations will output invalid data.

If a Program command is issued during a Block Erase Suspend, then the erase cannot be resumed until the programming operation has completed. It is possible to accumulate suspend operations. For example: su spend an erase operation, start a programming operation, suspend the

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M58WR064ET, M58WR064EB

programming operation then read the array. See Appendix C, Figure 24, Program Su spend & Resume Flowchart and Pseudo Code, and Figure 26, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/Erase Resume command.

Protectio n R egist er Progr am C om m and

The Protection Register Program command is used to Program the 128 bit user O ne-Time-Programmable (OTP) segment of the Protection Register and the Protection Register Lock. The segment is programmed 16 bits at a time. When

shipped all bits in the segment are set to ‘1’. The user can only program the bits to ‘0’.

Two write cycles are required to issue the Protection Register Program command.

■ The first bus cycle sets up the Protection

■ The second latches the Address and the Data to

be written to the Protection Register and starts the Program/Erase Controller.

Read operations output the Status Register content after the programming has started.

The segment can be protected by programming bit 1 of the Protection Lock Register. Bit 1 of the Protection Lock Register also protects bit 2 of the Protection Lock Register. Programming bit 2 of the Protection Lock Register will result in a permanent protection of Parameter Block #0 (see Figure 5, Security Block and Protection Register Memory Map). Attempting to program a previously protected Protection Register will result in a Status Register error. The protection of the Protection Register and/or the Security Block is not reversible.

The Protection Register Program cannot be suspended. See Appendix C, Figure 28, Protection Register Program Flowchart and Pseudo Code, for a flowchart for using the Protection Register Program command.

Set Conf ig uration Regi s te r C om m and

The Set Configuration Register command is used to write a new value to the Burst Configuration Control Register which defines the burst length, type, X latency, Synchronous/Asynchronous Read mode and the valid Clock edge configuration.

Two Bus Writ e cycles a re required to i ssue the Set Configuration Register command.

■ The first cycle writes the setup command and

the address corresponding to the Configuration Register content.

■ The second cycle writes the Configuration

The Read mode of the banks is not modified when the Set Configuration Register command is issued.

The value for the Configuration Register is always presented on A0-A15. CR0 is on A0, CR1 on A1, etc.; the other address bits are ignored.

Block Lock Command

The Block Lock command is used to lock a block and prevent Program or Erase operations from changing the data in it. All blocks are locked at power-up or reset.

Two Bus Write cycles are required to issue the Block Lock command.

■ The first bus cycle sets up the Block Lock

command.

■ The second Bus Write cycle latc hes the block

address.

The lock status can be monitored for each block using the Read Electronic Signature command. Table. 13 shows the Lock Status after issuing a Block Lock command.

The Block Lock bits are vo latile, once set they remain set until a hardware reset or power-down/ power-up. They are cleared by a Block Unlock command. Refer to the section, Block Locking, for a detailed explanation. See Appendix C, Figure 27, Locking Operations Flowchart and Pseudo Code, for a flowchart for using the Lock command.

Block Unlock Command

The Block Unlock command is used to unlock a block, allowing the block to be programmed or erased. Two Bus Write cycles are requ ired to issue the Block Unlock command.

■ The first bus cycle sets up the Block Unlock

command.

■ The second Bus Write cycle latc hes the block

address.

The lock status can be monitored for each block using the Read Electronic Signature command. Table 13 shows the protection status after issuing a Block Unlock command. Refer to the section, Block Locking, for a detailed expla nation and A ppendix C, Figure 27, Locking Operations Flowchart and Pseudo Code, f or a flowchart for using the Unlock command.

Block Lock-Down Command

A locked or unlocked block can be locked-down by issuing the Block Lock-Down command. A lockeddown block cannot be programm ed or erased, or have its protection status changed when WP low, V

. When WP is high, V

the Lock-Down

IH,

function is disabled and the locked blocks can be individually unlocked by the Block Unlock command.

Two Bus Write cycles are required to issue the Block Lock-Down command.

■ The first bus cycle sets up the Block Lock

command.

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M58WR064ET, M58WR064EB

■ The second Bus Write cycle latches the blo ck

address.

The lock status can be monitored for each block using the Read Electronic Signature command. Locked-Down blocks revert to the locked (and not locked-down) state when the device is reset on

power-down. Table. 13 shows the Lo ck Statu s after issuing a Block Lock-Down command. Refer to the section, Block Locking, for a detailed explanation and Appendix C, Fi gure 27, Locking Operations Flowchart and Pseudo Code, for a flowchart for using the Lock-Down command.

Table 5. Standard Commands

Bus Operations

Commands

Cycles

Op. Add Data Op. Add Data

Read Arra y 1+ Write BKA FFh Read Status Register 1+ Write BKA 70h Read Read Electro nic Signature 1+ Write BKA 90h Read Read CFI Query 1+ Write BKA 98h Read Clear Status Register 1 Write BKA 50h Block Erase 2 Wri t e Program 2 Write Program/E rase Su s pen d 1 Write X B0h

Program/Erase Resume 1 Write X D0h Protection Register Program 2 Write PRA C0h Write Set Configuration Register 2 Write CRD 60h Write

Block Loc k 2 Write Block Unlock 2 Wri te Block Loc k-Down 2 Write

Note: 1. X = Don’t Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,

QD=Query Dat a, BA=Bl ock Address, BK A= Ban k Address , PD= Program Data, PR A=Prot ectio n Regist er Addre ss, PRD =Prote ction Register Dat a, CRD=Configuration Regis ter Data.

2. Must be same bank as in the first cycle. The signature address es are listed i n T able 6.

3. Any address within the bank can be used.

1st Cycle 2nd Cycle

BKA or BA

BKA or WA

Read

(3)

20h Write BA D0h

40h or 10h Write WA PD

WA RD BKA BKA

BKA

PRA PRD CRD

BKA or BA BKA or BA BKA or BA

(3)

60h Write BA 01h 60h Write BA D0h 60h Write

(2)

SRD ESD

03h

2Fh

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M58WR064ET, M58WR064EB

Table 6. Electronic Signature Codes

Code Address (h) Dat a (h)

Manufacturer Code Bank Address + 00 0020

Device Code

Top Bank Address + 01 8810 Bottom Bank Address + 01 8811 Lock

0001

Unlocked 0000

Block Protection

Block Address + 02

Locked and Locked-Down 0003

Unlocked and Locked-Down 0002 Reserved Bank Address + 03 Reserved Configuration Register Bank Address + 05 CR

ST Factory Default

0006

Security Block Permanently Locked 0002 Protection Register Lock

OTP Area Permanently Locked 0004

Security Block and OTP Area Permanently

Locked

Bank Address + 80

Bank Address + 81 Bank Address + 84

0000

Unique Device

Number

Protection Register

Bank Address + 85 Bank Address + 8C

Note: CR=Con figurati on Register.

OTP Area

Figure 5. Security Block and Protection Register Memory Map

SECURITY BLOCK

Parameter Block # 0

8Ch

85h 84h

81h 80h

PROTECTION REGISTER

User Programmable OTP

Unique device number

Protection Register Lock 2 1 0

AI06181

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M58WR064ET, M58WR064EB

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS

The Factory Program commands are used to speed up programming. They require V V

except for the Bank Eras e command which

PPH

also operates at V

= VDD. Refer to Table 7, Fac-

to be at

tory Program Commands, in conjunction with the following text descriptions.

The use of Factory Program comma nds requires certain operating conditions.

■ V

must be set t o V

(except for Bank Erase

PPH

command),

■ V

must be within operating range,

■ Ambient temperature, T

■ The targeted block must be unlocked.

must be 25°C ± 5°C,

Bank Erase Command

The Bank Erase command can be used to erase a bank. It sets all the bits within the selected bank to ’1’. All previous data in th e ban k is lo st. Th e B ank Erase command will igno re any protected blocks within the bank. If all blocks in the ba nk are protected then the Bank Erase operation will abort and the data in the bank wi ll not b e changed. The Status Register will not output any error.

Bank Erase operations can be p erformed at both

= V

and VPP = VDD.

PPH

Two Bus Write cycles are required to issue the command.

■ The first bus cycle sets up the Bank Erase

command.

■ The second latches the bank address in the

internal state machine and starts the Program/ Erase Controller.

If the second bus cycle is not Write Bank Erase Confirm (D0h), Status Register bits SR4 and S R5 are set and the command aborts. Erase aborts if Reset turns to V

. As data integrity cannot be

guaranteed when the Erase operation is aborted, the bank must be erased again.

Once the command is issued the device outputs the Status Register data when any address within the bank is read. At the end o f the operation the bank will remain in Read Status Register mode until a Read Array, Read CFI Query or Read Electronic Signature command is issued.

During Bank Erase operations the bank being erased will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other commands will be ignored.

For optimum performance, Bank Erase commands should be limited to a maximum of 100 Program/Erase cycles per Block. After 100 Program/ Erase cycles the internal algorithm will still operate properly but some degradation in performance may occur.

Dual operations are not supported during Bank Erase operations and the command cannot be suspended.

Typical Erase times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

Double Word Program Command

The Double Word Program command improves the programming throughput by writing a page of two adjacent words in parallel. The two words must differ only for the address A0.

Three bus write cycles are neces sary to issue the Double Word Program command.

■ The first bus cycle sets up the Double Word

Program Command.

■ The second bus cycle latches the Address and

the Data of the first word to be written.

■ The third bus cycle latches the Address and the

Data of the second word to be written and starts the Program/Erase Controller.

Read operations in the bank bei ng programmed output the Status Register content after the programming has started.

During Double Word Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other commands will be ignored. Dual operations are not supported during Double Word Program operations and the command cannot be suspended. Typical Program times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

Programming aborts if Reset goe s to V integrity cannot be guaranteed when the program operation is aborted, the memory locations m ust be reprogrammed.

See Appendix C, Figure 22, Double Word Program Flowchart and Pseudo Code, for the flowchart for using the Double Word Program command.

Quadruple Word Program Command

The Quadruple Word Program command improves the programming throughput by writing a page of four adjacent words in parallel. The four words must differ only for the addresses A0 and A1.

Five bus write cycles are necessary to issue the Quadruple Word Program command.

■ The first bus cycle sets up the Double Word

Program Command.

■ The second bus cycle latches the Address and

the Data of the first word to be written.

. As data

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M58WR064ET, M58WR064EB

■ The third bus cycle latches the Address and the

Data of the second word to be written.

■ The fourth bus cycle latches the Address and

the Data of the third word to be written.

■ The fifth bus cycl e latches the Addres s and th e

Data of the fourth word to be written and starts the Program/Erase Controller.

Read operations to the bank being programmed output the Status Register content after the programming has started.

Programming aborts if Reset goe s to V

. As data

integrity cannot be guaranteed when the program operation is aborted, the memory locations mu st be reprogrammed.

During Quadruple Word Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other commands will be ignored.

Dual operations are not supported during Quadruple Word Program operations and the command cannot be suspended. Typi cal Program times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

See Appendix C, Figure 23, Quadruple Word Program Flowchart and Pseudo Code, for the flowchart for using the Quadruple Word Program command.

Enhanced Factory Program Command

The Enhanced Factory Program command can be used to program large streams of dat a within any one block. It greatly reduces the total programming time when a large number of Words are written to a block at any one time.

Dual operations are not s upported during the Enhanced Factory Program operation an d the command cannot be suspended.

For optimum performance the Enhanc ed Factory Program commands should be limited to a maximum of 10 program/erase cycles per block. If this limit is exceeded the in ternal algorithm will c ont inue to work properly but some degradation in performance is possible. Typical Prog ram times are given in Table 14.

The Enhanced Factory Program command has four phases: the Setup Phase, the Program Phase to program the data to the memory, the Verify Phase to check that the data has been correctly programmed and reprogram if necessary a nd the Exit Phase. Refer to Table 7, Enhanced Factory Program Command and Figure 29, Enhanced Factory Program Flowchart.

Setup Phase. The Enhanced Factory Program command requires two Bus Write operations to initiate the command.

■ The first bus cycle sets up the Enhanced

Factory Program command.

■ The second bus cycle confirms the command.

The Status Register P/E.C. Bit 7 should be read to check that the P/E.C. is ready. After the confirm command is issued, read operations output the Status Register data. The read Status Register command must not be issued as it will be interpreted as data to program.

Program Phase. The Program Phase requires n+1 cycles, wher e n is the n umber of Words (refer to Table 7, Enhanced Factory Program Command and Figure 29, Enhanced Factory Program Flowchar t).

Three successive steps are required to issue and execute the Program Phase of the command.

1. Us e one Bus Write operation to latch the Start Address and the first Word to be programmed. The Status Register Bank Write Status bit SR0 should be read to check that the P/E.C. is ready for the next Word.

2. Each subsequent Word to be programmed is latched with a new Bus Write operation. The address can either remain the Start Address, in which case the P/E.C. increments the address location or the address can be incremented in which case the P/E.C. jumps to the new address. If any address that is not in the same block as the Start Address is given with data FFFFh, the Program Phase terminates and the Verify Phase begins. The Status Register bit SR0 should be read between each Bus Write cycle to check that the P/E.C. is ready for the next Word.

3. Finally, after all Words have been programmed, write one Bus Write operation with data FFFF h to any address outside the bl ock contain ing the Start Address, to terminate the programming phase. If the data is not FFFFh, the command is ignored.

The memory is now set to enter the Verify Phase. Verify Phase. Th e Verify Phase is s imilar to the

Program Phase in that all Words must be resent to the memory for them to be che cked against the programmed data. The Program/Erase Controller checks the stream of da ta with the data that was programmed in the Program Phase and reprograms the memory location if necessary.

Three successive steps are required to execute the Verify Phase of the command.

1. Us e one Bus Write operation to latch the Start Address and the first Word, to be verified. The Status Register bit SR0 should be read to check that the Program/Erase Controller is ready for the next Word.

19/82

M58WR064ET, M58WR064EB

2. Each subsequent Word to be verified is latched with a new Bus Write operation. The Words must be written in the same order as in the Program Phase. The address can remain the Start Address or be incremented. If any address that is not in the same block as the Start Address is given with data FFFFh, the Verify Phase terminates. Status Register bit SR0 should be read to check that the P/E.C. is ready for the next Word.

3. Finally, after all Words have been verified, write one Bus Write operation with data FFFFh to any address outside the block containing the Start Address, to terminate the Verify Phase.

If the Verify Phase is successfully completed the memory remains in Read Status Register mode. If the Program/Erase Controller fails to reprogram a given location, the error will be signaled in the Status Register.

Exit Phase. Status Register P/E.C. bit SR7 set to

‘1’ indicates that the device has ret urned to Read mode. A full Status Register check should be done to ensure that the block has been successfully programmed. See the s ect ion on the Status Register for more details.

Quadruple Enhanced Factory Program Command

The Quadruple Enhanced Factory Program command can be used to program one or more pages of four adjacent Words in parallel. The four Words must differ only for the addresses A0 and A1.

Dual operations are not supported during Quadruple Enhanced Factory Program operations and the command cannot be suspended.

The Quadruple Enhanced Factory Program command has four phases: the Setup Phase, the Load Phase where the data is loaded into the buffer, the combined Program and Verify Phase where the loaded data is programmed to the memory and then automatically checked and reprogrammed if necessary and the Exit Phase. Unlike the Enhanced Factory Program it is not necess ary t o resubmit the data for the Verify Phase. The Load Phase and the Program and Verify Phas e can be repeated to program any number of pag es within the block.

Setup Phase. The Q uadruple Enhan ced Factory Program command requires one Bus Write operation to initiate the load phase. After the setup command is issued, read operations output the Status Register data. The Read Status Register command must not be issued as it will be interpreted as data to program.

Load Phase. The Load Phase requires 4 cycles to load the data (refer to Table 7, Factory Program Commands and Figure 30, Quadruple Enhanced Factory Program Flowchart). Once the first Word

of each Page is written it is impossible to exit the Load phase until all four Words have been written.

Two successive steps are required to issue and execute the Load Phase of the Quadruple Enhanced Factory Program comm and.

1. Us e one Bus Write operation to latch the Start Address and the first Word of the first Page to be programmed. For subsequent Pages the first Word address can remain the Start Address (in which case the next Page is programmed) or can be any address in the same block. If any address with data FFFFh is given that is not in the same block as the Start Address, the device enters the Exit Phase. For the first Load Phase Status Register bit SR7 should be read after the first Word has been issued to check that the command has been accepted (bit SR7 set to ‘0’). This check is not required for subsequent Load Phases.

2. Each subsequent Word to be programmed is latched with a new Bus Write operation. The address is only checked for the first Word of each Page as the order of the Words to be programmed is fixed.

The memory is now set to enter the Program and Verify Phase.

Program and Verify Phase. In the Program and Verify Phase the four Words that were loaded in the Load Phase are programmed in the memory array and then verified by the Program/Erase Controller. If any errors are found the Program/Erase Controller reprograms the location. During this phase the Status Register shows that the Program/Erase Controller is busy, Status Register bit SR7 set to ‘0’, and that the device is not waiting for new data, Status Register bit SR0 set to ‘1’. When Status Register bit SR0 i s set to ‘0’ the Program and Verify phase has terminated.

Once the Verify Phase has successfully completed subsequent pages in the same block can be loaded and programmed. The device returns to the beginning of the Load Phase by issuing one Bus Write operation to latch the A ddress and the first of the four new Words to be programmed.

Exit Phase. Finally, after all the pages have been programmed, write one Bus Write operation with data FFFFh to any address outside the block containing the Start Address, to terminate the Load and Program and Verify Phases.

Status Register bit SR7 set t o ‘1’ a nd bit S R0 set to ‘0’ indicate that the Quadruple Enhanced Factory Program command has terminated. A full Status Register check should be done to ensure that the block has been sucessfully programmed. See the section on the Status Register for more details.

If the Program and Verify Phase has successfully completed the memory returns to Read mode. If

20/82

the P/E.C. fails to program and reprogram a given location, the error will be signaled in the Status Register.

Table 7. Factory Program Commands

Command Phase

Bank Erase

Double Word Program

Cycles

(4)

1st 2nd 3rd Final -1 Final

Add Data Add Data Add Data Add Data Add Data

BKA 80h BKA D0h

BKA or WA1

35h WA1 PD1 WA2 PD2

(8)

M58WR064ET, M58WR064EB

Bus Write Operations

Quadruple Word Program

(5)

Enhanced

Factory

Program

Setup, Program

(6)

Verify, Exit n+1

Setup, first Load

n+1

BKA or

(8)

WA1 BKA or

(8)

WA1

(2)

WA1

BKA or

(8)

WA1

56h WA1 PD1 W A2 PD2 WA3 PD3 WA4 PD4

30h

PD1

75h

BA or

WA1

WA2

WA1

(9)

(3)

(2)

D0h

PD2

PD1

WA1

WA3

WA2

(2)

(3)

(7)

PD1

PD3

PD2

WAn

WA3

(3)

(7)

PAn

PD3

NOT

WA1

NOT

WA1

WA4

First

Quadruple

Enhanced

Factory

Program

(5,6)

Program & Verify

Subsequent Loads

Subsequent Program &

Automatic

WA1i

(2)

PD1i

WA2i

(7)

PD2i

WA3i

(7)

PD3i

Automatic

WA4i

(7)

Verify

NOT

Exit 1

Note: 1. WA=Word Add ress in t argeted bank, BKA= Bank A ddress, P D= P rogram Data, BA =Block Address .

2. WA1 is the Start Address. NOT WA1 is any addres s t hat i s not in the same bl ock as W A1.

3. Address ca n remain Starting Address WA1 or be i ncremented.

4. Word Addres ses 1 and 2 must be consecutive Addresses differing only for A0.

5. Word Addres ses 1,2,3 and 4 must be consecutive Addresses di ffering onl y for A0 and A1.

6. A Bus Read mus t b e d one bet ween eac h Wr ite cyc le where t he da t a is p rog ram med or v erif ied to read t he Stat us R eg ister an d check that the memory is ready to accept the next dat a. n = number of Words, i = number of Pages to be progr am m ed.

7. Address is o nly che ck ed for the fir st Wo rd of ea ch Page a s the o rder t o pro gram the Wo rds i n each pag e is fixe d so su bs equent Words in each Page can be written to any address.

8. Any address within the bank can be used.

9. Any addres s within the bl ock can be use d.

WA1

(2)

FFFFh

(2)

(7)

FFFFh

PD4

PD4i

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M58WR064ET, M58WR064EB

STATUS REGISTER

The Status Register provides information on the current or previous Program or Erase operations. Issue a Read Status Register command to read the contents of the Status Register, refer to Read Status Register Command section for more details. To output the contents, the Status Register is latched and updated on the falling edge of the Chip Enable or Output Enable signal s and c an be read until Chip Enable or Output Enable returns to V

. The Status Register can only be read using

single asynchronous or single synchronous reads. Bus Read operations from any address within the bank, always read the Status Register during Program and Erase operations.

The various bits convey information about the status and any errors of the operation. Bits SR7, SR6, SR2 and SR0 give information on the status of the device and are set and reset by the device. Bits SR5, SR4, SR3 and S R1 give information on errors, they are set by the device but must be reset by issuing a Clear Status Register command or a

hardware reset. If an error bit is set to ‘1’ the Status Register should be reset before issuing another command. SR7 to SR1 ref er to the status of the device while SR0 refers to the status of the addressed bank.

The bits in the Status Register are summarized in Table 8, Status Register Bits. Refer to Table 8 in conjunction with the following text descriptions.

Program/Erase Controller Status Bit (SR7). The Program/Erase Controller Status bit indicates whether the Program/Erase Controller is act ive or inactive in any bank. When the Program/Erase Controller Status bit is Low (set to ‘0’), the Program/Erase Controller is active; when the bit is High (set to ‘1’), the Program/Erase Controller is inactive, and the device is ready to process a new command.

The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller pauses. After the Program/Erase Controller pauses the bit is High.

During Program, Erase, o perations the Program/ Erase Controller Status bit can be polled to find the end of the operation. Other bits in the Status Register should not be tested until the Program/Erase Controller completes the operation and the bit is High.

After the Program/Erase Cont roller completes its operation the Erase Status, Prog ram Status, V Status and Block Lock Status bits should be tested for errors.

Erase Suspend Status Bit (SR6). The Erase Suspend Status bit indicates that an Erase operation has been suspended or is going to be sus-

pended in the addressed block. When the Eras e Suspend Status bit is High (set to ‘1’), a Program/ Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command.

The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). SR7 is set within the Erase Suspend Latency time of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the Suspend mode.

When a Program/Erase Re sume command is issued the Erase Suspend Status bit returns Low.

Erase Status Bit (SR5). The Erase Status bit can be used to identify if the memory has failed to verify that the block or bank has erased correctly. When the Erase Status b it is High (set to ‘1’), the Program/Erase Controller has applied the maximum number of pulses to the block or bank and still failed to verify that it has erased correctly. The Erase Status bit should be read once the Program/ Erase Controller Status bit is High (Program/Erase Controller inactive).

Once set High, the Erase Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail.

Program Status Bit (SR4). The Program Status bit is used to identify a Program failure or an attempt to program a ‘1’ to an already programmed bit when V

= V

PPH

When the Program Status bit is High (set to ‘1’), the Program/Erase Controller has applied the maximum number of pulses to the byte an d still failed to verify that it has programmed correctly.

After an attempt to program a '1' to an already programmed bit, the Program Status bit SR4 only goes High (set to '1') if V ent from V

, SR4 remains Low (set to '0') and

PPH

= V

(if VPP is differ-

PPH

the attempt is not shown). The Program St atus bit should be read once t he

Program/Erase Controller Status bit is High (Program/Erase Controller inactive).

Once set High, the Program Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command will appear to fail.

Status Bit (SR3). The VPP Status bit can be

used to identify an invalid v oltage on the V during Program and Erase operations. The V

pin is only sampled at the beginning of a Program

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M58WR064ET, M58WR064EB

or Erase operation. Indeterminate results can occur if V

When the V

age on the V when the V

becomes invalid during an operation.

Status bit is Low (set to ‘0’), the volt-

pin was sampled at a valid voltage;

Status bit is High (set to ‘1’), the V

pin has a voltage that is below the VPP Lockout Voltage, V

, the memory is protected and Pro-

PPLK

gram and Erase operations cannot be performed. Once set High, the V

Status bit can only be reset

Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail.

Program Suspend Status Bit (SR2). The Program Suspend Status bit indicates that a Program operation has been suspended in the addressed block. When the Program Suspend Status bit is High (set to ‘1’), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The Program Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). SR2 is set within t he Program Suspend Latency time of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the Suspend mode.

When a Program/Erase Re sume command is issued the Program Suspend Status bit returns Low.

Block Protection Status Bit (SR1). The Block Protection Status bit can be used to identify if a Program or Block Erase operation has tried to modify the contents of a locked block.

When the Block Protection Status bit is High (set to ‘1’), a Program or Erase operation has been attempted on a locked block.

Once set High, the Block Protection Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command will appear to fail.

Bank Wri te/Multiple Wor d Program Sta tus Bit (SR0). The Bank Write Status bit indicates wheth-

er the addressed bank is programming or erasing. In Enhanced Factory Program mode th e Multiple Word Program bit shows if a Word has finished programming or verifying depending on the phase. The Bank Write Status bit should only be considered valid when the Pro gr a m/Erase Controller Status SR7 is Low (set to ‘0’).

When both the Pro gra m/Erase Controller Status bit and the Bank Write Status bit are Low (set to ‘0’), the addressed bank is executing a Program or Erase operation. When the Program/Erase Controller Status bit is Low (set to ‘0’) and the Bank Write Status bit is High (set to ‘1’), a Program or Erase operation is being executed in a bank other than the one being addressed.

In Enhanced Factory Program mode if Multiple Word Program Status bit is Low (set to ‘0’), the device is ready for the next Word, if the Multiple Word Program Status bit is High (set to ‘1’) the device is not ready for the next Word.

Note: Refer to Appendix C, Flowcharts and Ps eudo Codes, for using the Status Register.

23/82

M58WR064ET, M58WR064EB

Table 8. Status Register Bits

Bit Name Type Logic Level Definition

SR7 P/E.C. Status Status

SR6 Erase Suspend Status St atus

’1’ Ready ’0’ Busy ’1’ Erase Suspended ’0’ Erase In progress or Completed

SR5 Erase Status Error

SR4 Program Status Error

SR3

Error

Status

SR2 Program Suspend Status Status

SR1 Block Protection Status Error

Bank Write Status Status

SR0

Multiple Word Program Status (Enhanced

Status

Factory Program mode)

Note: Logic level ’1’ is High, ’0’ is Low.

’1’ Erase Error ’0’ Erase Success ’1’ Program Error ’0’ Program Success

Invalid, Abort

’1’ ’0’

’1’ Program Suspended ’0’ Program In Progress or Completed ’1’ Program/Erase on protected Block, Abort ’0’ No operation to protected blocks

SR7 = ‘0’ Program or erase operation in addressed bank

’0’

SR7 = ‘1’ No Program or erase operation in the device

'1'

SR7 = ‘0’

Program or erase operation in a bank other than

the addressed bank SR7 = ‘1’ Not Allowed SR7 = ‘0’ the device is NOT ready for the next word

'1'

SR7 = ‘1’ Not Allowed SR7 = ‘0’ the device is ready for the next Word

'0'

SR7 = ‘1’ the device is exiting from EFP

24/82

CONFIGURATION REGISTER

The Configuration Register is used to configure the type of bus access that the memory will perform. Refe r to Rea d Mo des secti on fo r d etai ls on read operations.

The Configuration Register is set through the Command Interface. After a Reset or Power-Up the device is configured for asynchronous page read (CR15 = 1). T he Configuration Register bits are described in Table 9. They spe cify the selection of the burst length, burst type, burst X latency and the Read operation. Refer to Figures 6 and 7 for examples of synchronous burst configurations.

Read Select Bit (CR15)

The Read Select bit, CR15, is used to switch between asynchronous an d sync hronous B us Read

operations. When the Read Se lect bit is set to ’1’, read operations are asynchronous; when the Read Select bit is set to ’0’, read o perations are synchronous. Synchronous Burst Read is supported in both parameter and main blocks and can be performed across banks.

On reset or power-up the Read Sel ect bit is set to’1’ for asynchronous access.

X-Latency Bits (CR13-CR11)

The X-Latency bits are used during Synchronous Read operations to set the number of clock cycles between the address bei ng latched and the first data becoming available. For correct operation the X-Latency bits can only assume the values in Table 9, Configuration Register.

The correspondence be tween X-Latency settings and the maximum sustainable freq uency must be calculated taking into account some system parameters. Two conditions must be satisfied:

1. Depending on whether t

AVK_CPU

or t

DELAY

is supplied either one of the following two equations must be satisfied:

(n + 1) t (n + 2) tK ≥ t

≥ t

ACC ACC

- t

AVK_CPU

+ t

DELAY

+ t

QVK_CPU

2. and also > t

KQV

+ t

QVK_CPU

where n is the chosen X-Latency configuration code

is the clock period

AVK_CPU

is clock to address valid, L Low, or E

Low, whichever occurs last t

is address valid, L Low, or E Low t o clock,

DELAY

whichever occurs last t

QVK_CPU

is the data setup time required by the

system CPU,

is the clock to data valid time

KQV

is the random access time of the device.

ACC

M58WR064ET, M58WR064EB

Refer to Figure 6, X-Latency and Data Output Configuration Example.

Wait Polarity Bit (CR10)

In synchronous burst mode the W ait signal indicates whether the output data are valid or a WAIT state must be inserted. The Wait Polarity bit is used to set the po larity of the Wait signal. When the Wait Polarity bit is set to ‘0’ the Wait signal is active Low. When the Wait P ola rity bit is s et t o ‘ 1’ the Wait signal is active High (default).

Data Output Configuration Bit (CR9)

The Data Output Configuration bit determines whether the output remains valid for one or two clock cycles. When the Data Output Configuration Bit is ’0’ the output data is valid for one clock cycle, when the Data Output Configuration Bit is ’1’ the output data is valid for two clock cycles.

The Data Output Configuration depends on the condition:

■ t

> t

where tK is the clock period, t setup time required by the s ystem CPU and t is the clock to data valid time. If this condition is not satisfied, the Data Output Configuration bit should be set to ‘1’ (two clock cycles). Refer to Figure 6, X-Latency and Data Output Configuration Example.

Wait Confi guration Bit (C R 8)

In burst mode the Wait bit controls the timing of the Wait output pin, WAIT. When WAIT is asserted, Data is Not Valid and when WAIT is deasserted, Data is Valid. When the Wait bit is ’0’ the Wait output pin is asserted during the wait state. When the Wait bit is ’1’ (default) the Wait output pin is asserted one clock cycle before the wait state.

Burst Type Bit (CR7)

The Burst Type bit is used to configure the sequence of addres ses read as sequential or interleaved. When the Burst Type bit is ’0’ the memory outputs from interleaved addresses; when the Burst Type bit is ’1’ (default) the mem ory outputs from sequential addresses. Se e Tables 10, Burst Type Definition, for the sequence of addresses output from a given starting address in each mode.

Valid Clock Edge Bit (CR6)

The Valid Clock Edge bit, CR6, is used to configure the active edge of the Clock, K, during Synchronous Burst Read operations. When the Valid Clock Edge bit is ’0’ the falling edge of the Clock is the active edge; when the Vali d Clock Edge bit is ’1’ the rising edge of the Clock is active.

Wrap Burst Bit (CR3)

The burst reads can be confined inside the 4 or 8 Word boundary (wrap) or o vercome t he b oundary

KQV

+ t

QVK_CPU

is the data

KQV

25/82

M58WR064ET, M58WR064EB

(no wrap). The Wrap Burst bit i s used to select between wrap and no wrap. When the Wrap Burst bit

is set to ‘0’ the burst read wraps; when it is set to ‘1’ the burst read does not wrap.

Burst length Bits (CR2-CR0)

The Burst Length bits set the n umb er of Words t o be output during a Synchronous Burst Read operation as result of a single address latch cycle. They can be set for 4 words, 8 words or continuous burst, where all the words are read sequentially.

In continuous burst mode the burs t sequ ence c an cross bank boundaries.

In continuous burst mode or in 4, 8 words no-wrap, depending on the starting add ress, the dev ice a s -

serts the WAIT output to indicate that a delay is necessary before the data is output.

If the starting address is aligned to a 4 word boundary no wait states are needed and the WAIT output is not asserted.

If the starting address is shifted by 1,2 or 3 positions from the four word boundary, WAIT will be asserted for 1, 2 or 3 clock cycles when the burst sequence crosses the first 64 word b oundary, to indicate that the device needs an internal delay to read the successive words in the array. WAIT will be asserted only once during a continuous burst access. See also Table 10, Burst Type Definition.

CR14, CR5 and CR4 are reserved for future use.

26/82

Table 9. Configuration Register

Bit Description Value Description

0 Synch rono us Re ad

CR15 Read Select

1 Asynchronous Read (Default at power-on)

CR14 Reserved

010 2 clock latency 011 3 clock latency 100 4 clock latency

CR13-CR11 X-Latency

101 5 clock latency 111 Reserved (default) Other configurations reserved 0 WAIT is active Low

CR10 Wait Polarity

1 WAIT is active high (default)

M58WR064ET, M58WR064EB

CR9

CR8 Wait Configuration

CR7 Burst Type

CR6 Valid Clock Edge

CR5-CR4 Reserved

CR3 Wrap Burst

CR2-CR0 Burst Length

Data Output Configuration

0 Data held for one clock cycle 1 Data held for two clock cycles (default) 0 WAIT is active during wait state 1 WAIT is active one data cycle before wait state (default) 0 Interleaved 1 Sequential (default) 0 Falling Clock edge 1 Rising Clock edge (default)

0 Wrap 1 No W rap (default) 001 4 words 010 8 words 111 Continuous (CR7 must be set to ‘1’) (default)

27/82

M58WR064ET, M58WR064EB

Table 10. Burst Type Definition

Start

Address 4 Words 8 Words

Mode

Sequential Interleaved Sequential Interleaved

0 0-1-2-3 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6... 1 1-2-3-0 1-0-3-2 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 1-2-3-4-5-6-7... 2 2-3-0-1 2-3-0-1 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 2-3-4-5-6-7-8... 3 3-0-1-2 3-2-1-0 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 3-4-5-6-7-8-9...

...

7 7-4-5-6 7-6-5-4 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 7-8-9-10-11-12-13...

Wrap

... 60 60-61-62-63-64-65-66... 61 61-62-63-WAIT-64-65-66... 62 62-63-WAIT-WAIT-64-65-66...

Sequential Interleaved Sequential Interleaved

0 0-1-2-3 0-1-2-3-4-5-6-7

Continuous Burst

63-WAIT-WAIT-WAIT-64-65-

66...

1 1-2-3-4 1-2-3-4-5-6-7-8 2 2-3-4-5 2-3-4-5-6-7-8-9... 3 3-4-5-6 3-4-5-6-7-8-9-10

...

7 7-8-9-10 7-8-9-10-11-12-13-14

...

No-wrap

60 60-61-62-63

61 61-62-63-WAIT-64

62-63-WAIT-WAIT-

63-WAIT-WAITWAIT-64-65-66

64-65

60-61-62-63-64-65-66-

61-62-63-WAIT-64-65-

66-67-68

62-63-WAIT-WAIT-64-

65-66-67-68-69

63-WAIT-WAIT-WAIT-

64-65-66-67-68-69-70

Same as for Wrap

(Wrap /No Wrap

has no effect on

Continuous Burst )

28/82

Figure 6. X-Latency a nd Da ta Ou t put C on f ig uration Exam pl e

X-latency

1st cycle 2nd cycle 3rd cycle 4th cycle

A21-A0 VALID ADDRESS

M58WR064ET, M58WR064EB

tDELAY

DQ15-DQ0

Note. Settings shown: X-latency = 4, Data Output held for one clock cycle

tAVK_CPU tKtQVK_CPU

tACC

Figure 7. Wai t Co nf i g ura tio n Exampl e

A21-A0

DQ15-DQ0

VALID ADDRESS

VALID DATA

tQVK_CPUtKQV

VALID DATA

VALID DATA NOT VALID VALID DATA

VALID DATA

AI06182

WAIT CR8 = '0' CR10 = '0'

WAIT CR8 = '1' CR10 = '0'

WAIT CR8 = '0' CR10 = '1'

WAIT CR8 = '1' CR10 = '1'

AI06972

29/82

M58WR064ET, M58WR064EB

READ MODES

Read operations can be performed in two different ways depending on the settings in the Configuration Register. If the clock s ignal is ‘don’t care’ for

the data output, the read operation is Asynchronous; if the data output is synchronized with clock, the read operation is Synchronous.

The Read mode and data output format are determined by the Configuration Register. (See Configuration Register section for details). All banks supports both asynchronous and synchronous read operations. The Multiple Bank architecture allows read operations in one bank, while write operations are being executed in anoth er (see Tables 11 and 12).

Asynchronous Read Mode

In Asynchronous Read operations the clock signal is ‘don’t care’. The device outpu ts the dat a corresponding to the address latched, that is the mem ory array, Status Register, Common Flash Interface or Electronic Signature depending on the command issued. CR15 in the Configuration Register must be set to ‘1’ for Asynchronous operations .

In Asynchronous Read mode a Page of data is internally read and stored in a Page Buffer. The Page has a size of 4 Words and is addressed by A0 and A1 address inputs. The address inputs A0 and A1 are not gated by Latch Enable in Asynchronous Read mode.

The first read operation within the Page has a longer access time (T subsequent reads within the same Page have much shorter access times. If the Page changes then the normal, longer timings apply again.

Asynchronous Read operations can be performed in two different ways, Asynchronous Random Access Read and Asynchronous Page Read. Only Asynchronous Page Read takes f ull adv antage of the internal page s torage so different t imings are applied.

During Asynchronous Read operations, after a bus inactivity of 150ns, the device automatically switches to the Automatic Standby m ode. In this condition the power consumption is reduced to the standby value and the outputs are still driven.

In Asynchronous Read mode, t he WAIT signal is always asserted.

See Table 20, Asynchronous Read AC Characteristics, Figure 10, Asynchrono us Random Access Read AC Waveform and Figure 11, Asynchronous Page Read AC Waveform for details.

Synchron ous Burst Rea d M ode

In Synchronous Burst Read mode t he data is output in bursts synchronized with the clock. It i s pos-

, Random access time),

acc

sible to perform burst reads across bank boundaries.

Synchronous Burst Read mode can onl y be used to read the memory array. For other read operations, such as Read Status Register, Read CFI and Read Electronic Signature, Single Synchronous Read or Asynchronous Random Access Read must be used.

In Synchronous Burst Read mode the flow o f the data output depends on param eters that are configured in the Configuration Register.

A burst sequence is started at t he first clo ck edge (rising or falling depending on Valid Clock Edge bit CR6 in the Configuration Register) after the falling edge of Latch Enable or Chip Enable, whichever occurs last. Addresses are internally incremented and after a delay of 2 to 5 clock cycles (X latency bits CR13-CR11) the co rresponding dat a are output on each clock cycle.

The number of Words to be out put during a Synchronous Burst Read operation can be configured as 4 or 8 Words or Continuous (Burst Length bits CR2-CR0). The data can be configured to remain valid for one or two clock cycles (Data Output Configur a tion b it CR9 ) .

The order of the data output can be modified through the Burst Type and the Wrap Burst bits in the Configuration Register. The burst sequence may be configured to be seq uential or i nterleaved (CR7). The burst reads can be confined inside the 4 or 8 Word boundary (Wrap) or overcome the boundary (No Wrap). If the starting address is aligned to the Burst Length (4 or 8 Words), the wrapped configuration has no impact on the output sequence. Interleaved mode is not allowed in Continuous Burst Read mode or with No Wrap sequences.

A WAIT signal may be asserted to indicate to the system that an output delay will occur. This delay will depend on the starting address of the burst sequence; the worst case dela y will o ccur w hen the sequence is crossing a 64 word boundary and the starting address was at the end of a four word boundary.

WAIT is asserted during X latency, the Wait state and at the end of 4- and 8-Word burst. It is only deasserted when output data are valid. In Continuous Burst Read mode a Wait state will occur when crossing the first 64 Word boundary. If the burst starting address is aligned to a 4 Word Page, the Wait state will not occur.

The WAIT signal can be configured to be active Low or active High (default) by setting CR10 in the Configuration Register. The WAIT signal is meaningful only in Synchronous Burst Read m ode, in

30/82

M58WR064ET, M58WR064EB

other modes, WAIT is always asserted (except for Read Array mode).

See Table 21, Synchronous Read AC Characteristics and Figure 12, Synchronous Burst Read AC Waveform for details.

Single Synchronou s Read Mode

Single Synchronous Re ad operations are similar to Synchronous Burst Read operations except that only the first data output after the X latency is valid.

Electronic Signature, Status Register, CFI, Block Protection Status, Configuration Register Status or Protection Register. When t he add ressed bank is in Read CFI, Read Status Register or Read Electronic Signature mode, the WAIT signal is always asserted.

See Table 21, Synchronous Read AC Characteristics and Figure 13, Single Synchronous Read AC Waveform for details.

Synchronous Single Reads are used to read the

DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE

The Multiple Bank Architecture of the M58WR064E provides flexibilit y for software developers by allowing code and data to be split wi th 4Mbit granularity. The Dual Operations feature simplifies the software managem ent of the dev ice and allows code to be executed from one bank while another bank is being programmed or erased.

The Dual operations feature means that while programming or erasing in one bank, Read operations are possible in another bank with zero latency (only one bank at a time is allowed to be in Program or Erase mode). If a Read operation is required in a bank which is programming or erasing,

the Program or Erase operation can be s uspended. Also if the suspended operation was Erase then a Program command can be issued to another block, so the device can have one block in Erase Suspend mode, one programm ing and ot her banks in Read mode. Bus Read operations are allowed in another bank between setup an d confirm cycles of program or erase operations . The combination of these features means that read operations are possible at any moment.

Tables 11 and 12 show the dual operations possible in other banks and i n the same ban k. For a complete list of possible comma nds refer to Appendix D, Command Interface State Tables.

Table 11. Dual Operations Allowed In Other Banks

Commands allowed in another bank

Status of bank

Idle Yes Yes Yes Yes Yes Yes Yes Yes Programming Yes Yes Yes Yes ––Yes–

Erasing Yes Yes Yes Yes – – Yes – Program Suspended Yes Yes Yes Yes – – – Yes Erase Suspended Yes Yes Yes Yes Yes – – Yes

Read Array

Read

Status

Read

CFI

Query

Read

Electronic

Signature

Program

Block Erase

Program/

Erase

Suspend

Program/

Erase

Resume

Table 12. Dual Operations Allowed In Same Bank

Commands allowed in same bank

Status of bank

Idle Yes Yes Yes Yes Yes Yes Yes Yes Programming Erasing

Program Suspended Erase Suspended

Note: 1. Not all owed in the Bl ock or Word that is being erased or programmed.

2. The Read Array command is accepted but the dat a output is not guaranteed until the Program or Erase has completed.

Read Array

(2)

–

(2)

–

(1)

Yes

(1)

Yes

Read

Status

Yes Yes Yes – – Yes – Yes Yes Yes – – Yes – Yes Yes Yes – – – Yes Yes Yes Yes

Read

CFI Query

Read Electronic Signature

Program

(1)

Yes

Block Erase

Program/

Erase

Suspend

––Yes

Program/

Erase

Resume

31/82

M58WR064ET, M58WR064EB

BLOCK LOCKING

The M58WR064E features an instant, individual block locking scheme that allo ws any block to be locked or unlocked with no latency. This locking scheme has three levels of protection.

■ Lock/Unlock - this first level allows software-

only control of block locking.

■ Lock-Down - this second level requires

hardware interaction before locking can be changed.

■ V

≤ V

hardware protection against program and erase on all blocks.

The protection status of each block can be set to Locked, Unlocked, and Lock-Down. Table 13, defines all of the possible protection states (WP DQ1, DQ0), and Appendi x C, Figure 27, shows a flowchart for the locking operations.

Reading a Block’s Lock Status

The lock status of every block can be read in the Read Electronic Signature mode of the device. To enter this mode write 90h t o the device. Subsequent reads at the addres s specified in Table 6, will output the pr otection sta tus of that bloc k. The lock status is represented by DQ0 and DQ 1. DQ0 indicates the Block Lock/Unlock status and i s set by the Lock comm and and cleared by the Unlock command. It is also automatically set when entering Lock-Down. DQ1 indicates the Lock-Down status and is set by the Lock-Down command. It cannot be cleared by software, only by a hardware reset or power-down.

The following sections explain the operation of the locking system.

Locked State

The default status of all blocks on power-up or after a hardware reset is L ocked (states (0,0,1) or (1,0,1)). Locked blocks are fully protected from any program or erase. Any program or erase operations attempted on a locked block will return an error in the Status Register. The Status of a Locked block can be changed to Unlocked or Lock-Down using the appropriate software commands. An Unlocked block can be Locked by issuing the Lock command.

Unlocked State

Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)), can be programmed or erased. All unlocked blocks return to the Locked state after a hardware reset or when the device is powered-down. The status of an unlocked block can be changed to

- the third level offers a complete

PPLK

Locked or Locked-Down using the appropriate software commands. A locked block can be unlocked by issuing the Unlock command.

Lock-Down State

Blocks that are Locked-Down (state (0,1,x))are protected from program and erase operations (as for Locked blocks) but th eir protect ion status cannot be changed using software comma nds alone. A Locked or Unlocked block can be Locked-Down by issuing the Lock-Down command. LockedDown blocks revert to the Locked state when the device is reset or powered-down.

The Lock-Down function is depen dent on the WP input pin. When WP=0 (VIL), the blocks in the Lock-Down state (0,1,x) are protected from program, erase and protection status changes. When

=1 (VIH) the Lock-Down function is disabled

WP (1,1,x) and Locked-Down blocks can be individually unlocked to the (1,1,0) state by issuing the software command, where they can be erased and programmed. These blocks can then be re-locked (1,1,1) and unlocked (1,1,0) as desired while WP remains high. When WP is low , blocks that were previously Locked-Down return to the Lock-Down state (0,1,x) regardless of any changes made while WP

was high. Device reset or power-down resets all blocks , including those in Lock-Down, to the Locked state.

Locking Operations During Erase Suspend

Changes to block lock status can be performed during an erase suspend by using the standard locking command sequences to unlock, lock or lock-down a block. This is useful in the case when another block needs to be updated while an erase operation is in progress.

To change block locking during an erase operation, first write the Erase Suspend command, then check the status register until it indicates that the erase operation has been suspended. Next write the desired Lock com mand sequence to a block and the lock status will be changed. After completing any desired lock, read, or program operations, resume the erase operation with the Erase Resume command.

If a block is locked or locked-down during an erase suspend of the same block, the locking status bits will be changed immediately, b ut when the erase is resumed, the erase operation will complete. Locking operations cannot be performed du ring a program suspend. Refer to Appendix , Comm and Interface State Table, for detailed information on which commands are valid during erase suspend.

32/82

M58WR064ET, M58WR064EB

Table 13. Lock Status

Current

Protection Status

(WP, DQ1, DQ0)

Current State

(1)

Program/Erase

Allowed

After

Block Lock

Command

Next Protection Status

(WP, DQ1, DQ0)

After

Block Unlock

Command

1,0,0 yes 1,0,1 1,0,0 1,1,1 0,0,0

1,0,1

(2)

no 1,0,1 1,0,0 1,1,1 0,0,1 1,1,0 yes 1,1,1 1,1,0 1,1,1 0,1,1 1,1,1 no 1,1,1 1,1,0 1,1,1 0,1,1

0,0,0 yes 0,0,1 0,0,0 0,1,1 1,0,0

0,0,1

(2)

no 0,0,1 0,0,0 0,1,1 1,0,1 0,1,1 no 0,1,1 0,1,1 0,1,1

Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read

in the Read El ectronic S i gnature comm and with A1 = V

2. All blocks ar e l ocked at power-up, so the default configuration is 001 or 101 according to WP

3. A WP

transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110.

and A0 = VIL.

(1)

After Block Lock-Down

Command

status.

After

transition

1,1,1 or 1,1,0

(3)

33/82

M58WR064ET, M58WR064EB

PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES

The Program and Erase times and the number of Program/ Er as e cycl e s p e r b lock are shown in T a ble 14. In the M58WR064E the maximum num ber

Table 14. Program, Erase Times and Progr am, Erase End uran ce Cycl es

Parameter Condition Min Typ

Parameter Block (4 KWord) Erase

(2)

of Program/ Erase cycles depends on the voltage supply used.

0.3 1 2.5 s

Typical

after

100k W/E

Cycles

Max

Unit

Main Block (32 KWord) Erase

Preprogrammed 0.8 3 4 s Not Preprogrammed 1.1 4 s Preprogrammed 3 s

Bank (4Mbit) Erase

Not Preprogrammed 4.5 s

Parameter Block (4 KWord) Program

= V

Main Block (32 KWord) Program

Word Program

(3)

40 ms

300 ms

10 10 100 µs

Program Suspend Latency 5 10 µs Erase Suspend Latency 5 20 µs

Main Blocks 100,000 cycles

Program/Erase Cycles (per Block)

Parameter Blocks 100,000 cycles Parameter Block (4 KWord) Erase 0.3 2.5 s Main Block (32 KWord) Erase 0.9 4 s Bank (4Mbit) Erase 3.5 s Bank (4Mbit) Program (Quad-E nhan ced Factory

(3)

(5)

Quadruple Word

Word 32 ms

Quadruple Word

(3)

Program) 4Mbit Program

PPH

Word/ Double Word/ Quadruple Word Program

= V

Parameter Block (4 KWord)

Program

Main Block (32 KWord) Program

(5)

(3, 5)

(5)

(4)

t.b.a.

510 ms

8 100 µs 8ms

64 ms

Word 256 ms

Program/Erase Cycles (per Block)

Main Blocks 1000 cycles

Parameter Blocks 2500 cycles

Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2.2V ; V

2. The differe nce betwee n Pr eprogrammed and not preprogram m ed is not signi ficant (‹30ms).

3. Excludes the time needed to execu te the command sequence .

4. t.b.a. = to be announced

5. Measurements performed at 25°C. T

= 1.65V to 3.3V .

DDQ

= 25°C ±5°C for Quadruple Word, Double Word and Quadru pl e E nhanced F actory P r ogram .

34/82

M58WR064ET, M58WR064EB

MAXI MUM RATI N G

Stressing the device ab ove the rating listed in t he Absolute Maximum Ratings table m ay cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions ab ove those i ndicated in t he Operating sections of this specificat ion is not im-

Table 15. Absolute Maximum Ratings

Symbol Parameter Min Max Unit

plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and ot her relevant quality documents.

Value

BIAS

STG

DDQ

VPPH

Ambient Operating Temperature –40 85 °C

Temperature Under Bias –40 125 °C Storage Temperature –65 155 °C

Input or Output Voltage –0.5

DDQ

+0.6

V Supply Voltage –0.2 2.45 V Input/Output Supply Voltage –0.2 3.6 V

Program Voltage –0.2 14 V Output Short Circuit Current 100 mA Time for VPP at V

PPH

100 hours

35/82

M58WR064ET, M58WR064EB

DC AND AC PARAMETERS

This section summarizes t he operating m easurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement

Table 16. Operating and AC Measurement Conditions

Conditions summarized in Table 16, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters.

M58WR064ET, M58WR064EB

Parameter

70 80 100

Min Max Min Max Min Max

Supply Voltage

DDQ

Supply Voltage (Factory environment)

Supply Voltage (Application environment)

1.7 2.2 1.65 2.2 1.65 2.2 V

1.7 3.3 1.65 3.3 1.65 3.3 V

11.4 12.6 11.4 12.6 11.4 12.6 V

-0.4

DDQ

+0.4

-0.4

DDQ

+0.4

-0.4

DDQ

+0.4

Ambient Operating Temperature – 40 85 – 40 85 – 40 85 °C

Load Capacitance (C

)

30 30 30 pF Input Rise and Fall Times 5 5 5 ns Input Pulse Voltages Input and Output Timing Ref. Voltages

0 to V

DDQ

/2 V

DDQ

0 to V

DDQ

/2 V

DDQ

0 to V

DDQ

Figure 8. AC Measurement I/O Waveform Figure 9. AC Measurem ent Load Circuit

DDQ

16.7kΩ

DDQ

Units

V V

AI06161

0.1µF

DEVICE UNDER

TEST

CL includes JIG capacitance

Table 17. Capacitance

Symbol Parameter Test Condition Min Max Unit

OUT

= 0V

68pF 812pF

OUT

Note: Samp l ed only, not 100% tested.

Input Capacitance Output Capacitance

36/82

16.7kΩ

AI06162

M58WR064ET, M58WR064EB

Table 18. DC Characteristics - Currents

Symbol Parameter Test Condition Min Typ Max Unit

Input Leakage Current

Output Leakage Current

Supply Current Asynchron ous Read (f=6MHz)

Supply Current

DD1

Synchronous Read (f=40MHz)

Supply Current Synchronous Read (f=54MHz)

DD2

DD3

DD4

Supply Current (Reset)

Supply Current (Standby) Supply Current (Automatic

Standby)

Supply Current (Program)

(1)

DD5

Supply Current (Erase)

DD6

DD7

(Dual Operations)

Supply Current Program/ Erase

(1)

Suspended (Standby)

Supply Current

(1,2)

VPP Supply Current (Program)

(1)

PP1

Supply Current (Erase)

PP2

PP3

Note: 1. Sampled only, not 100% tested.

VPP Supply Current (Read) V

(1)

VPP Supply Current (Standby) V

2. V

Dual Operation current is the sum of read and pro gram or eras e currents.

0V ≤ V

Program/Erase in one

Bank, Asynchron ous

Read in another Bank

Program/Erase in one

Bank, Synchronous

Read in another Bank

≤ V

OUT

= VIL, G = V

DDQ

36mA

±1 µA ±1 µA

4 Word 6 1 3 mA 8 Word 8 1 4 mA

Continuous 6 1 0 mA

4 Word 7 1 6 mA 8 Word 10 18 mA

Continuous 13 25 mA

= VSS ± 0.2V

= VDD ± 0.2V

= VIL, G = V

= V

PPH

= V

PPH

= V

10 50 µA

815mA

10 20 mA

815mA

10 20 mA

13 26 mA

16 30 mA

= VDD ± 0.2V

= V

PPH

= V

PPH

= V

≤

10 50 µA

25mA

0.2 5 µA 25mA

0.2 5 µA

37/82

M58WR064ET, M58WR064EB

Table 19. DC Characteristics - Voltages

Symbol Parameter Test Condition Min Typ Max Unit

V V V

Input Low Voltage –0.5 0.4 V

Input High Voltage

Output Low Voltage

Output High Voltage

VPP Program Voltage-Logic

PP1

= 100µA

= –100µA V

Program, Erase 1 1.8 1.95 V

–0.4 V

DDQ

–0.1

DDQ

+ 0.4

DDQ

0.1 V

PPH V

PPLK

LKO

RPH

Program Voltage Factory

Program or Erase Lockout 0.9 V VDD Lock Voltage RP pin Extended High Voltage 3.3 V

Program, Erase 11.4 12 12.6 V

38/82

Figure 10. Asynchronous Rando m Access Read AC Waveforms

VALID

tEHQZ

tEHQX

tAXQX

tGHQX

M58WR064ET, M58WR064EB

AI06163b

tGHQZ

VALID

A0-A21

tAVAV

tAVLH tLHAX

tGLQV

tGLQX

tLHGL

tLLQV

tLLLH

tELQV

tELLH

tELQX

tELTV tEHTZ

Hi-Z

WAIT

tAVQV

Valid Address Latch Outputs Enabled Data Valid Standby

Hi-Z

DQ0-DQ15

Note. Write Enable, W, is High, WAIT is active Low.

39/82

M58WR064ET, M58WR064EB

Figure 11. Asynchronous Page Read AC Waveforms

VALID ADDRESSVALID ADDRESSVALID ADDRESS

AI06164b

Standby

VALID ADDRESS

tAVAV

tLHAX

tAVLH

tLLLH

tLLQV

tLHGL

tELLH

tELQV

tELQX

tELTV

tGLQV

tAVQV1tGLQX

VALID DATAVALID DATA VALID DATA VALID DATA

Valid Data

Outputs

Enabled

Valid Address Latch

40/82

A2-A21

A0-A1

Hi-Z

(1)

WAIT

DQ0-DQ15

Note 1. WAIT is active Low.

Table 20. Asynchronous Read AC Characteristics

Symbol Alt Parameter

M58WR064ET, M58WR064EB

= 1.65V-2.2V V

DDQ

70 80 100 70 80 100

= 2.2V-3.3V

DDQ

Unit

AVAV

AVQV

AVQV1tPAGE

AXQX

EL TV

ELQV

ELQX

EHTZ

Read Timings

EHQX

EHQZ

GLQV

GLQX

GHQX

GHQZ

AVLHtAVADVH

ELLHtELADVH

LHAXtADVHAX

LLLH

Latch Timings

LLQVtADVLQV

LHGLtADVHGL

Note: 1. Sampled only, not 100% tested.

2. G

may be delayed by up to t

Address Valid to Next Address Valid Min 70 80 100 70 80 100 ns

Address Valid to Output Valid

ACC

(Random) Address Valid to Output Valid

(Page)

(1)

Address Transition to Output

Transition Chip Enable Low to Wait Valid Max 14 14 18 20 22 22 ns

(2)

(1)

(2)

(1)

Chip Enable Low to Output Valid Max 70 80 100 70 80 100 ns

Chip Enable Low to Output

Transition Chip Enable High to Wait Hi-Z Max 17 17 20 25 25 25 ns Chip Enable High to Output

Transition

Chip Enable High to Output Hi-Z Max 17 17 20 20 20 20 ns

Output Enable Low to Output Valid Max 20 25 25 30 30 30 ns

Output Enable Low to Output

OLZ

Transition Output Enable High to Output

Transition

Output Enable High to Output Hi-Z Max 17 17 20 17 17 20 ns

Address Valid to Latch Enable High Min 9 9 10 10 10 12 ns Chip Enable Low to Latch Enable

High Latch Enable High to Address

Transition

ADVLAD

Latch Enable Pulse Width Min 9 9 10 10 10 12 ns

Latch Enable Low to Output Valid (Random)

Latch Enable High to Output Enable Low

ELQV

Max 70 80 100 70 80 100 ns

Max 20 25 25 25 25 25 ns

Min000000ns

Min 10 10 10 10 10 12 ns

Min 9 9 10 9 9 10 ns

Max 70 80 100 70 80 100 ns

Min000000ns

- t

after the fal ling edge of E without increasi ng t

GLQV

ELQV

41/82

M58WR064ET, M58WR064EB

Figure 12. Synchronous Burst Read AC Waveforms

VALID

tKHQX

tKHQV

NOT VALID

VALID

tKHQX

VALID

tEHQX

tEHQZ

tKHQXtKHQV

tEHEL

tGHQZ

tGHQX

tKHTX

tKHTV

tEHTZ

Note 2 Note 2

Standby

Valid

Data

Boundary

Crossing

AI06980c

VALID

Hi-Z

DQ0-DQ15

tKHQV

tLLLH

tAVLH

VALID ADDRESS

A0-A21

tKHTV

Note 2

Note 1

tGLQX

X Latency Valid Data Flow

tLLKH

tAVKH

tELKH tKHAX

(3)

tELTV

Hi-Z

WAIT

Address

Latch

Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register.

2. The WAIT signal can be configured to be active during wait state or one cycle before. WAIT signal is active Low.

3. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, K, can be configured as the active edge.

Here the active edge of K is the rising one.

42/82

Figure 13. Single Synchronous Read AC Waveforms

tEHQZ

tEHQX

NOT VALID NOT VALID

NOT VALID

tEHEL

M58WR064ET, M58WR064EB

tEHTZ

tGHQZ

tGHQX

AI06973c

VALID NOT VALID

Hi-Z

DQ0-DQ15

tLLLH

tAVLH

VALID ADDRESS

A0-A21

tKHQV

Note 1

tGLQV

tKHTV

Note 3

tGLQX

tLLKH

tAVKH

tELTV

tELKH tKHAX

Hi-Z

(2)

(4)

WAIT

Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register.

2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low.

3. WAIT is always asserted when addressed bank is in Read CFI, Read SR or Read electronic signature mode.

WAIT signals valid data if the addressed bank is in Read Array mode.

4. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, K, can be configured as the active edge.

Here the active edge of K is the rising one.

43/82

M58WR064ET, M58WR064EB

Figure 14. Clock input AC Waveform

tKHKL

tKHKH

tf tr

tKLKH

Table 21. Synchronous Read AC Characteristics

Symbol Alt Parameter

AVKHtAVCLKH

ELKHtELCLKH

EL TV

EHEL

EHTZ

KHAXtCLKHAX

KHQV

KHTV

Synchronous Read Timings

KHQX

KHTX

LLKH

KHKH

KHKL

KLKH

Clock Specifications

Note: 1. Sampled only, not 100% tested.

2. For other ti mings plea se refer to Table 20, Asy nchronous Read AC Ch aracteri st i cs.

CLKHQV

CLKHQX

ADVLCLK

CLK

Address Valid to Clock High Min 7 7 7 9 9 10 ns Chip Enable Low to Clock High Min 7 7 7 9 9 10 ns Chip Enable Low to Wait Valid Max 14 14 18 20 22 22 ns Chip Enable Pulse Width

(subsequent synchronous reads)

Min 14 14 14 20 20 20 ns

Chip Enable High to Wait Hi-Z Max 14 14 20 25 25 25 ns Clock High to Address Transition Min 9 9 10 10 10 10 ns Clock High to Output Valid

Clock High to WAIT Valid Clock High to Output Transition

Clock High to WAIT Transition

Latch Enable Low to Clock High Min 7 7 7 10 10 10 ns

Max 14 14 18 20 22 22 ns

Min444555ns

Clock Period (f=33MHz) Clock Period (f=40MHz) 25 25

Min Clock Period (f=54MHz) 18.5 18.5 - - - ns Clock High to Clock Low

Clock Low to Clock High

Min 4.5 4.5 5 9.5 9.5 9.5 ns

Clock Fall or Rise Time Max 3 3 3 3 5 5 ns

AI06981

= 1.65V-2.2V V

DDQ

= 2.2V-3.3V

DDQ

Unit

70 80 100 70 80 100

--- 3030ns

44/82

Figure 15. Write AC Waveforms, Write Enable Controlled

M58WR064ET, M58WR064EB

AI06974

PROGRAM OR ERASE

tWHAV

tWHAX

tAVAV

VALID ADDRESSA0-A21

tAVWH

tWHGL

tELQV

tWHQV

tWHEL

tQVWPL

tWHWPL

tWPHWH

tQVVPL

tWHVPL

tVPHWH

READ

1st POLLING

STATUS REGISTER

tELKV

OR DATA INPUT

tLHAX

tLLLH

BANK ADDRESS VALID ADDRESS

tAVLH

tWHWL

tWHDXtDVWH

tWLWH

COMMAND CMD or DATA STATUS REGISTER

DQ0-DQ15

SET-UP COMMAND CONFIRM COMMAND

tWHLL

tELLH

tELWL tWHEH

tGHWL

45/82

M58WR064ET, M58WR064EB

Table 22. Write AC Characteristics, Write Enable Controlled

Symbol Alt Parameter

M58WR064E

Unit

70 80 100

Write Enable Controlled Timings

AVAV

AVLH

AVWH

DVWH

ELLH

ELWL

ELQV

ELKV

GHWL

LHAX

LLLH

WHAV

WHAX

WHDX

WHEH

WHEL

WHGL

WHLL

WHWL

(3)

(2)

Address Valid to Next Address Valid Min

80 100 ns

Address Valid to Latch Enable High Min 9 9 10 ns

Address Valid to Write Enable High Min

Data Valid to Write Enable High Min

45 45

50 50 ns 50 50 ns

Chip Enable Low to Latch Enable High Min 10 10 10 ns

Chip Enable Low to Write Enable Low Min 0 0 0 ns

Chip Enable Low to Output Valid Min

80 100 ns

Chip Enable High to Clock Valid Min 9 9 9 ns Output Enable High to Write Enable Low Min 17 17 20 ns Latch Enable High to Address Transition Min 9 9 10 ns

Latch Enable Pulse Width Min 9 9 10 ns Write Enable High to Address Valid Min 0 0 0 ns

Write Enable High to Address Transition Min 0 0 0 ns

Write Enable High to Input Transition Min 0 0 0 ns

Write Enable High to Chip Enable High Min 0 0 0 ns

Write Enable High to Chip Enable Low Min

25 25 ns Write Enable High to Output Enable Low Min 0 0 0 ns Write Enable High to Latch Enable Low Min 0 0 0 ns

Write Enable High to Write Enable Low Min 25 25 25 ns

WPH

WHQV

WLWH

QVVPL

QVWPL

VPHWH

WHVPL

WHWPL

Protection Timings

WPHWH

Note: 1. Sampled only, not 100% tested.

2. t

3. Meaningful only if L

has the values show n when reading in the targe ted bank. System d esigners should take this into accou nt and may insert a

WHEL

software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a different bank t

Write Enable High to Output Valid Min

Write Enable Low to Write Enable High Min

Output (Status Register) Valid to VPP Low Output (Status Register) Valid to Write Protect

Low

VPSVPP

High to Write Enable High Write Enable High to VPP Low Write Enable High to Write Protect Low Min 200 200 200 ns Write Protect High to Write Enable High Min 200 200 200 ns

is 0ns.

WHEL

is always kept low.

46/82

95 45

105 125 ns

50 50 ns

Min 0 0 0 ns

Min 200 200 200 ns Min 200 200 200 ns

Figure 16. Write AC Waveforms, Chip Enable Controlled

M58WR064ET, M58WR064EB

AI06975

PROGRAM OR ERASE

tEHAX

tAVAV

VALID ADDRESS

tAVEH

tEHGL

tELQV

tWHEL

STATUS REGISTER

tWHQV

tEHWPL

tQVWPL

tQVVPL

READ

1st POLLING

STATUS REGISTER

tEHVPL

tELKV

OR DATA INPUT

tLHAX

tLLLH

BANK ADDRESS VALID ADDRESS

tAVLH

A0-A21

tEHWH

tELLH

tVPHEH

SET-UP COMMAND CONFIRM COMMAND

tWPHEH

tEHEL

tWLEL

tGHEL

tEHDX

tELEH

tDVEH

DQ0-DQ15 COMMAND CMD or DATA

47/82

M58WR064ET, M58WR064EB

Table 23. Write AC Characteristics, Chip Enable Controlled

Symbol Alt Parameter

M58WR064E

Unit

70 80 100

AVAV

AVEH

AVLH

DVEH

EHAX

EHDX

EHEL

EHGL

EHWH

ELKV

ELEH

ELLH

ELQV

Chip Enable Controlled Timings

GHEL

LHAX

LLLH

WHEL

WHQV

WLEL

EHVPL

EHWPL

QVVPL

QVWPL

VPHEH

Protection Timings

WPHEH

Note: 1. Sampled only, not 100% tested.

2. t

WHEL

software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a different bank t

Address Valid to Next Address Valid Min

Address Valid to Chip Enable High Min

Address Valid to Latch Enable High Min 9 9 10 ns

Data Valid to Write Enable High Min

Chip Enable High to Address Transition Min 0 0 0 ns

Chip Enable High to Input Transition Min 0 0 0 ns

Chip Enable High to Chip Enable Low Min 25 25 25 ns

WPH

Chip Enable High to Output Enable Low Min 0 0 0 ns

Chip Enable High to Write Enable High Min 0 0 0 ns

Chip Enable Low to Clock Valid Min 9 9 9 ns

Chip Enable Low to Chip Enable High Min

Chip Enable Low to Latch Enable High Min 10 10 10 ns Chip Enable Low to Output Valid Min Output Enable High to Chip Enable Low Min 17 17 20 ns Latch Enable High to Address Transition Min 9 9 10 ns Latch Enable Pulse Width Min 9 9 10 ns

(2)

Write Enable High to Chip Enable Low Min Write Enable High to Output Valid Min 95 105 125 ns

Write Enable Low to Chip Enable Low Min 0 0 0 ns

Chip Enable High to VPP Low Chip Enable High to Write Protect Low Min 200 200 200 ns Output (Status Register) Valid to VPP Low Output (Status Register) Valid to Write Protect

Low

VPSVPP

High to Chip Enable High

Write Protect High to Chip Enable High Min 200 200 200 ns

has the values show n when reading in the targe ted bank. System d esigners should take this into accou nt and may insert a

is 0ns.

WHEL

70 45

80 100 ns 50 50 ns

50 50 ns

80 100 ns

25 25 ns

Min 200 200 200 ns

Min 0 0 0 ns

Min 200 200 200 ns

48/82

Figure 17. Reset and Power-up AC Waveforms

M58WR064ET, M58WR064EB

W,RPE, G,

VDD, VDDQ

tVDHPH tPLPH

tPHWL

tPHEL

tPHGL

tPHLL

Power-Up Reset

tPLWL

tPLEL

tPLGL

tPLLL

Table 24. Reset and Power-up AC Characteristics

Symbol Parameter Test Condition 70 80 100 Unit

PLWL

PLEL

PLGL

PLLL

PHWL

PHEL

PHGL

PHLL

PLPH

VDHPH

Note: 1. The de vi ce Reset is p ossible but not guaran t eed if t

2. Sampled only, not 100% tested.

3. It is important to assert RP

Reset Low to Write Enable Low, Chip Enable Low, Output Enable Low, Latch Enable Low

Reset High to Write Enable Low Chip Enable Low Output Enable Low Latch Enable Low

(1,2)

RP Pulse Width Min 50 50 50 ns Supply Voltages High to Reset

(3)

High

in order to allow proper CPU initialization during Power-Up or Reset.

During Program Min 10 10 10 µs

During Erase Min 20 20 20 µs Other Conditions Min 80 80 80 ns

Min 30 30 30 ns

Min 50 50 50 µs

< 50ns.

PLPH

AI06976

49/82

M58WR064ET, M58WR064EB

PACKAGE MECHANICAL

Figure 18. VFBGA56 - 7.7x9mm, 8x7 bal l array, 0.75mm pitch, Bottom View Packag e Outlin e

E1E

BALL "A1"

ddd

Note: Drawing is not to scale.

BGA-Z38

Table 25. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pi tch , Packag e Mechani cal Data

Symbol

Typ Min Max Typ Min Max

A 1.000 0.0394 A1 0.200 0.0079 A2 0.660 0.0260

b 0.3 50 0.300 0.400 0.0138 0.0118 0.0157

D 7.700 7.600 7.800 0.3031 0.2 992 0.3071 D1 5.250 – – 0.2 067 – –

ddd 0.080 0.0031

e 0.7 50 – – 0.0295 – –

millimeters inches

E 9.000 8.900 9.100 0.3543 0.3504 0.3583 E1 4.500 – – 0.1772 – –

FD 1.225 – – 0.0482 – –

FE 2.250 – – 0.0 886 – –

SD 0.375 – – 0.0148 – –

50/82

M58WR064ET, M58WR064EB

Figure 19. VFBGA56 Daisy Chain - Package Connection s (Top view through package )

87654321

AI07731

51/82

M58WR064ET, M58WR064EB

Figure 20. VFBGA56 Daisy Chain - PCB Connection Proposal (Top view through packa ge)

87654321

START POINT

END POINT

AI07755

52/82

M58WR064ET, M58WR064EB

PART NUMBERING

Table 26. Ordering Information Scheme

Example: M58WR064ET 70 ZB 6 T

Device Type

M58

Architecture

W = Multiple Bank, Burst Mode

Operating Voltage

R = V

Device Function

064ET = 64 Mbit (x16), Top Boot 064EB = 64 Mbit (x16), Bottom Boot

Speed

70 = 70ns 80 = 80ns 10 = 100ns

1.65V to 2.2V, V

DD =

= 1.65V to 3.3V

DDQ

Package

ZB = VFBGA56:

Temperature Range

6 = –40 to 85°C

Option

T = Tape & Reel packing

7.7 x 9 mm, 0.75mm pitch

Table 27. Daisy Chain Ordering Scheme

Example: M58WR064E -ZB T

Device Type

M58WR06 4E

Daisy Chain

ZB = VFBGA56:

Option

T = Tape & Reel Packing

7.7x9 mm, 0.75 mm pitch

Devices are shipped from the factory with the memory content bits erased to ’1’.

For a list of available options (Speed, Package, etc....) or for further information on any aspect of this de-

vice, please contact the ST Sales Office nearest to you.

53/82

M58WR064ET, M58WR064EB

APPENDIX A. BLOCK ADDRESS TABLES

Table 28. Top Boot Block Addresses, M58WR064ET

Bank #

Parameter Bank

Bank 1

Bank 2

Bank 3

0 4 3FF000-3FFFFF 1 4 3FE000-3FEFFF 2 4 3FD000-3FDFFF 3 4 3FC000-3FCFFF 4 4 3FB000-3FBFFF 5 4 3FA000-3FAFFF 6 4 3F9000-3F9FFF 7 4 3F8000-3F8FFF 8 32 3F0000-3F7FFF

9 32 3E8000-3EFFFF 10 32 3E0000-3E7FFF 11 32 3D8000-3DFFFF 12 32 3D0000-3D7FFF 13 32 3C8000-3CFFFF 14 32 3C0000-3C7FFF 15 32 3B8000-3BFFFF 16 32 3B0000-3B7FFF 17 32 3A8000-3AFFFF 18 32 3A0000-3A7FFF 19 32 398000-39FFFF 20 32 390000-397FFF 21 32 388000-38FFFF 22 32 380000-387FFF 23 32 378000-37FFFF 24 32 370000-377FFF 25 32 368000-36FFFF 26 32 360000-367FFF 27 32 358000-35FFFF 28 32 350000-357FFF 29 32 348000-34FFFF 30 32 340000-347FFF 31 32 338000-33FFFF 32 32 330000-337FFF 33 32 328000-32FFFF 34 32 320000-327FFF 35 32 318000-31FFFF 36 32 310000-317FFF 37 32 308000-30FFFF 38 32 300000-307FFF

Size

(KWord)

Address Range

39 32 2F8000-2FFF FF 40 32 2F0000- 2F7F FF 41 32 2E8000- 2EFF FF 42 32 2E0 000- 2E7F FF 43 32 2D8000- 2DFF FF

Bank 4

44 32 2D0000-2D7F FF 45 32 2C8000- 2CFF FF 46 32 2C0000-2C7F FF 47 32 2B8000-2BFFFF 48 32 2B0000-2B7FFF 49 32 2A8000-2AFFFF 50 32 2A0000-2A7FFF 51 32 298000-29FFFF

Bank 5

52 32 290000-297FFF 53 32 288000-28FFFF 54 32 280000-287FFF 55 32 278000-27FFFF 56 32 270000-277FFF 57 32 268000-26FFFF 58 32 260000-267FFF 59 32 258000-25FFFF

Bank 6

60 32 250000-257FFF 61 32 248000-24FFFF 62 32 240000-247FFF 63 32 238000-23FFFF 64 32 230000-237FFF 65 32 228000-22FFFF 66 32 220000-227FFF 67 32 218000-21FFFF

Bank 7

68 32 210000-217FFF 69 32 208000-20FFFF 70 32 200000-207FFF 71 32 1F8000-1FFFFF 72 32 1F0000-1F7FFF 73 32 1E8000-1EFFFF 74 32 1E0000-1E7FFF 75 32 1D8000-1DFFFF

Bank 8

76 32 1D0000-1D7FFF 77 32 1C8000-1CFFFF 78 32 1C0000-1C7FFF

54/82

M58WR064ET, M58WR064EB

79 32 1B8000-1BFFFF 80 32 1B0000-1B7FFF 81 32 1A8000-1AFFFF 82 32 1A0000-1A7FFF 83 32 198000-19FFFF

Bank 9

84 32 190000-197FFF 85 32 188000-18FFFF 86 32 180000-187FFF 87 32 178000-17FFFF 88 32 170000-177FFF 89 32 168000-16FFFF 90 32 160000-167FFF 91 32 158000-15FFFF

Bank 10

92 32 150000-157FFF 93 32 148000-14FFFF 94 32 140000-147FFF 95 32 138000-13FFFF 96 32 130000-137FFF 97 32 128000-12FFFF 98 32 120000-127FFF 99 32 118000-11FFFF

Bank 11

100 32 110000-117FFF 101 32 108000-10FFFF 102 32 100000-107FFF 103 32 0F8000-0FFFFF 104 32 0F0000-0F7FFF 105 32 0E8000-0EFFFF 106 32 0E0000-0E7FFF 107 32 0D8000-0DFFFF

Bank 12

108 32 0D0000-0D7FFF 109 32 0C8000-0CFFFF 110 32 0C0000-0C7FFF

111 32 0B8000-0BFFFF 112 32 0B0000-0B7FFF 113 32 0A8000-0AFFFF 114 32 0A0000-0A7FFF 115 32 098000-09FFFF

Bank 13

116 32 090000-097FFF 117 32 088000-08FFFF 118 32 080000-087FFF 119 32 078000-07FFFF 120 32 070000-077FFF 121 32 068000-06FFFF 122 32 060000-067FFF 123 32 058000-05FFFF

Bank 14

124 32 050000-057FFF 125 32 048000-04FFFF 126 32 040000-047FFF 127 32 038000-03FFFF 128 32 030000-037FFF 129 32 028000-02FFFF 130 32 020000-027FFF 131 32 018000-01FFFF

Bank 15

132 32 010000-017FFF 133 32 008000-00FFFF 134 32 000000-007FFF

Note: There are two Bank Regions, Region 1 contains all the banks

that are made up of main blocks only, Region 2 contains the banks that are made up of the parame ter and main blocks.

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M58WR064ET, M58WR064EB

Table 29. Bottom Boot Block Addresses, M58WR064EB

Bank #

134 32 3F8000-3FFFFF 133 32 3F0000-3F7FFF 132 32 3E8000-3EFFFF 131 32 3E0000-3E7FFF 130 32 3D8000-3DFFFF

Bank 15

129 32 3D0000-3D7FFF 128 32 3C8000-3CFFFF 127 32 3C0000-3C7FFF 126 32 3B8000-3BFFFF 125 32 3B0000-3B7FFF 124 32 3A8000-3AFFFF 123 32 3A0000-3A7FFF 122 32 398000-39FFFF

Bank 14

121 32 390000-397FFF 120 32 388000-38FFFF 119 32 380000-387FFF 118 32 378000-37FFFF 117 32 370000-377FFF 116 32 368000-36FFFF 115 32 360000-367FFF 114 32 358000-35FFFF

Bank 13

113 32 350000-357FFF 112 32 348000-34FFFF 111 32 340000-347FFF 110 32 338000-33FFFF 109 32 330000-337FFF 108 32 328000-32FFFF 107 32 320000-327FFF 106 32 318000-31FFFF

Bank 12

105 32 310000-317FFF 104 32 308000-30FFFF 103 32 300000-307FFF 102 32 2F8000-2FFFFF 101 32 2F0000-2F7FFF 100 32 2E8000-2EFFFF

Bank 11

99 32 2E0000-2E7FFF 98 32 2D8000-2DFFFF 97 32 2D0000-2D7FFF 96 32 2C8000-2CFFFF 95 32 2C0000-2C7FFF

Size

(KWord)

Address Range

94 32 2B8000-2BFFFF 93 32 2B0000-2B7FFF 92 32 2A8000-2AFFFF 91 32 2A0000-2A7FFF 90 32 298000-29FFFF

Bank 10

89 32 290000-297FFF 88 32 288000-28FFFF 87 32 280000-287FFF 86 32 278000-27FFFF 85 32 270000-277FFF 84 32 268000-26FFFF 83 32 260000-267FFF 82 32 258000-25FFFF

Bank 9

81 32 250000-257FFF 80 32 248000-24FFFF 79 32 240000-247FFF 78 32 238000-23FFFF 77 32 230000-237F FF 76 32 228000-22FFFF 75 32 220000-227F FF 74 32 218000-21FFFF

Bank 8

73 32 210000-217F FF 72 32 208000-20FFFF 71 32 200000-207F FF 70 32 1F8000-1FFFFF 69 32 1F0000-1F7FFF 68 32 1E8000-1EFFFF 67 32 1E0000-1E7FFF 66 32 1D8000-1DFFFF

Bank 7

65 32 1D0000-1D7FFF 64 32 1C8000-1CFFFF 63 32 1C0000-1C7FFF 62 32 1B8000-1BFFFF 61 32 1B0000-1B7FFF 60 32 1A8000-1AFFFF 59 32 1A0000-1A7FFF 58 32 198000-19FFFF

Bank 6

57 32 190000-197FFF 56 32 188000-18FFFF 55 32 180000-187FFF

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M58WR064ET, M58WR064EB

54 32 178000-17FFFF 53 32 170000-177FFF 52 32 168000-16FFFF 51 32 160000-167FFF 50 32 158000-15FFFF

Bank 5

49 32 150000-157FFF 48 32 148000-14FFFF 47 32 140000-147FFF 46 32 138000-13FFFF 45 32 130000-137FFF 44 32 128000-12FFFF 43 32 120000-127FFF 42 32 118000-11FFFF

Bank 4

41 32 110000-117FFF 40 32 108000-10FFFF 39 32 100000-107FFF 38 32 0F8 000- 0FFF FF 37 32 0F0000-0F7FFF 36 32 0E8000-0EFF FF 35 32 0E0000- 0E7F FF 34 32 0D8000- 0DFF FF

Bank 3

33 32 0D0 000- 0D7F FF 32 32 0C8000- 0CFF FF 31 32 0C0 000- 0C7F FF 30 32 0B8000-0BFFFF 29 32 0B0000-0B7FFF 28 32 0A8000-0AFFFF 27 32 0A0000-0A7FFF 26 32 098000-09FFFF

Bank 2

25 32 090000-097FFF 24 32 088000-08FFFF 23 32 080000-087FFF

22 32 078000-07FFFF 21 32 070000-077FFF 20 32 068000-06FFFF 19 32 060000-067FFF 18 32 058000-05FFFF

Bank 1

17 32 050000-057FFF 16 32 048000-04FFFF 15 32 040000-047FFF 14 32 038000-03FFFF 13 32 030000-037FFF 12 32 028000-02FFFF 11 32 020000-027FFF 10 32 018000-01FFFF

9 32 010000-017FFF 8 32 008000-00FFFF 7 4 007000-007FFF 6 4 006000-006FFF 5 4 005000-005FFF

Parameter Bank

4 4 004000-004FFF 3 4 003000-003FFF 2 4 002000-002FFF 1 4 001000-001FFF 0 4 000000-000FFF

Note: There are two Bank Regions, Region 1 contains all the banks

that are made up of main blocks only, Region 2 contains the banks that are made up of the parame ter and main blocks.

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M58WR064ET, M58WR064EB

APPENDIX B. COMMON FLASH INTERFACE

The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to det ermine various electrical and t iming parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary.

When the Read CFI Query Command is issued the device enters CFI Query mode and the data structure is read from the memory. Tables 30 , 31,

Table 30. Query Structure Overview

Offset Sub-section Name Description

00h Reserved Reserved for algorithm-specific information 10h CFI Query Identification String Command set ID and algorithm data offset 1Bh System Interface Information Device timing & voltage information 27h Device Geometry Definition Flash device layout

P Primary Algorithm-specific Extended Query table

A Alternate Algorithm-specific Extended Query table

80h Security Code Area

Note: The Flash memory di splay the CFI data st ructure w hen CFI Query command i s issued. In t hi s table are listed th e main sub-sec tions

detailed in Tables 31, 32, 33, 34, 36 and 1. Query data is always presented on the lowes t order data ou tputs.

32, 33, 34, 36 and 1 show th e addresses used to retrieve the data. The Query data is always presented on the lowest order data outputs (DQ0DQ7), the other outputs (DQ8-DQ15) are set to 0.

The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 1, Security Code area). This area can be accessed only in Read mode by the final user. It is impossible to change t he secu rity number after it has been written by ST. Issue a Read Array command to return to Read mode.

Additional information specific to the Primary Algorithm (optional)

Additional information specific to the Alternate Algorithm (optional)

Lock Protection Register Unique device Number and User Programmable OTP

Table 31. CFI Query Identification String

Offset Sub-section Name Description Value

00h 0020h Manufacturer Code ST 01h 02h reserved Reserved

03h reserved Reserved

04h-0Fh reserved Reserved

10h 0051h 11h 0052h "R" 12h 0059h "Y" 13h 0003h 14h 0000h 15h offset = P = 0039h 16h 0000h 17h 0000h 18h 0000h 19h value = A = 0000h

1Ah 0000h

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8810h 8811h

Device Code

Query Unique ASCII String "QRY"

Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm

Address for Primary Algorithm extended Query table (see Table 33) p = 39h

Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported

Address for Alternate Algorithm extended Query table NA

Top

Bottom

"Q"

M58WR064ET, M58WR064EB

Table 32. CFI Query System Interface Information

Offset Data Description Value

Logic Supply Minimum Program/Erase or Write voltage

1Bh 0017h

1Ch 0022h

1Dh 0017h

1Eh 00C0h

1Fh 0004h

20h 0003h 21h 000Ah 22h 0000h 23h 0003h 24h 0004h 25h 0002h 26h 0000h

bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts

Logic Supply Maximum Program/Erase or Write voltage

bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts

[Programming] Supply Minimum Program/Erase voltage

bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts

[Programming] Supply Maximum Program/Erase voltage

bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts

Typical time-out per single byte/word program = 2

Typical time-out for quadruple word program = 2 Typical time-out per individual block erase = 2 Typical time-out for full chip erase = 2 Maximum time-out for word program = 2

times typical Maximum time-out for quadruple word = 2 Maximum time-out per individual block erase = 2 Maximum time-out for chip erase = 2

times typical

µs

times typical

1.7V

2.2V

1.7V

12V

16µs

8µs

NA 128µs 128µs

Table 33. Device Geometry Definition

Offset Word

Mode

27h 0017h 28h

29h

2Ah 2Bh

2Ch 0002h Number of identical sized erase block regions within the device

2Dh 2Eh

2Fh 30h

31h 32h

33h

M58WR064ET

34h 35h

38h

Data Description Value

in number of bytes

0001h 0000h

0003h 0000h

Device Size = 2

Flash Device Interface Code description

Maximum number of bytes in multi-byte program or page = 2

bit 7 to 0 = x = number of Erase Block Regions

007Eh 0000h

0000h 0001h

0007h 0000h

0020h 0000h

Region 1 Information Number of identical-size erase blocks = 007Eh+1

Region 1 Information Block size in Region 1 = 0100h * 256 byte

Region 2 Information Number of identical-size erase blocks = 0007h+1

Region 2 Information Block size in Region 2 = 0020h * 256 byte

Reserved Reserved for future erase block region information NA

8 MByte

x16

Async.

8 Byte

127

64 KByte

8 KByte

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M58WR064ET, M58WR064EB

Offset Word

Mode

2Dh 2Eh

2Fh 30h

31h 32h

33h

M58WR064EB

34h 35h

38h

Data Description Value

0007h 0000h

0020h 0000h

007Eh 0000h

0000h 0001h

Reserved Reserved for future erase block region information NA

Region 1 Information Number of identical-size erase block = 0007h+1

Region 1 Information Block size in Region 1 = 0020h * 256 byte

Region 2 Information Number of identical-size erase block = 007Eh+1

Region 2 Information Block size in Region 2 = 0100h * 256 byte

8 KByte

64 KByte

Table 34. Primary Algorithm-Specific Extended Qu ery Ta bl e

Offset Data Description Value

(P)h = 39h 0050h

0052h "R"

0049h "I" (P+3)h = 3Ch 0031h Major version number, ASCII "1" (P+4)h = 3Dh 0030h Minor version number, ASCII "0" (P+5)h = 3Eh 00E6h Extended Query table contents for Primary Algorithm. Address (P+5)h

0003h

(P+7)h = 40h 0000h (P+8)h = 41h 0000h

Primary Algorithm extended Query table unique ASCII string “PRI”

contains less significant byte.

bit 0 Chip Erase supported (1 = Yes, 0 = No) bit 1 Erase Suspend supported (1 = Yes, 0 = No) bit 2 Program Suspend supported (1 = Yes, 0 = No) bit 3 Legacy Lock/Unlock supported (1 = Yes, 0 = No) bit 4 Queued Erase supported (1 = Yes, 0 = No) bit 5 Instant individual block locking supported (1 = Yes, 0 = No) bit 6 Protection bits supported (1 = Yes, 0 = No) bit 7 Page mode read supported (1 = Yes, 0 = No) bit 8 Synchronous read supported (1 = Yes, 0 = No) bit 9 Simultaneous operation supported (1 = Yes, 0 = No) bit 10 to 31 Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31

bit field of optional features follows at the end of the bit-30 field.

127

"P"

No Yes Yes

No Yes Yes Yes Yes Yes

(P+9)h = 42h 0001h Supported Functions after Suspend

(P+A)h = 43h 0003h Block Protect Status (P+B)h = 44h 0000h

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Read Array, Read Status Register and CFI Query

bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No) bit 7 to 1 Reserved; undefined bits are ‘0’

Defines which bits in the Block Status Register section of the Query are implemented.

bit 0 Block protect Status Register Lock/Unlock

bit active (1 = Yes, 0 = No) bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No) bit 15 to 2 Reserved for future use; undefined bits are ‘0’

Yes

Yes Yes

M58WR064ET, M58WR064EB

Offset Data Description Value

Logic Supply Optimum Program/Erase voltage (highest performance)

(P+C)h = 45h 0018h

bit 7 to 4HEX value in volts bit 3 to 0BCD value in 100 mV

Supply Optimum Program/Erase voltage

(P+D)h = 46h 00C0h

bit 7 to 4HEX value in volts bit 3 to 0BCD value in 100 mV

Table 35. Protection Register Information

Offset Data Description Value

(P+E)h = 47h 0001h

(P+F)h = 48h 0080h

(P+10)h = 49h 0000h

(P+11)h =

4Ah

0003h 8 Bytes

(P+12)h= 4Bh 0004h 16 Bytes

Number of protection register fields in JEDEC ID space. 0000h indicates that 256 fields are available.

Protection Field 1: Protection Description Bits 0-7 Lower byte of protection register address Bits 8-15 Upper byte of protection register address

Bits 16-23 2 Bits 24-31 2

bytes in factory pre-programmed region

bytes in user programmable region

1.8V

12V

0080h

Table 36. Burst Read Information

Offset

(P+13)h = 4Ch 0003h Page-mode read capability

(P+14)h = 4Dh 0003h Number of synchronous mode read configuration fields that follow. 3 (P+15)h = 4Eh 0001h Synchronous mode read capability configuration 1

(P+16)h = 4Fh 0002h Synchronous mode read capability configuration 2 8

(P+17)h = 50h 0007h Synchronous mode read capability configuration 3 Cont.

Data Description Value

8 Bytes

bits 0-7 ’n’ such that 2

HEX value represents the number of readpage bytes. See offset 28h for device word width to determ ine page-m ode data outpu t width.

bit 3-7 Reserved

n+1

bit 0-2 ’n’ such that 2

HEX value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. A value of 07h indicates that the device is capable of continuous linear bursts that will output data until the internal burst counter reaches the end of the device’s burstable address space. This field’s 3-bit value can be written directly to the read configuration register bit 0-2 if the device is configured for its maximum word width. See offset 28h for word width to determine the burst data output width.

Table 37. Bank and Erase Block Region Information

M58WR064ET (top) M58WR064EB (bottom)

Offset Data Offset Data

(P+18)h =51h 02h (P+18)h =51h 02h Number of Bank Regions within the device

Note: 1. The v ari able P is a po i n t er which is defined at CFI offset 15h.

2. Bank Regions. There are two Bank Regions, 1 contains all th e banks t hat are m ade up of main blocks only, 2 contains the ban ks that are made up of the parameter and m ai n blocks.

Description

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M58WR064ET, M58WR064EB

Table 38. Bank and Erase Block Region 1 Information

M58WR064ET (top) M58WR064EB (bottom)

Offset Data Offset Data

Description

(P+19)h =52h 0Fh (P+19)h =52h 01h (P+1A)h =53h 00h (P+1A)h =53h 00h

(P+1B)h =54h 11h (P+1B)h =54h 11h

(P+1C)h =55h 00h (P+1C)h =55h 00h

(P+1D)h =56h 00h (P+1D)h =56h 00h

(P+1E)h =57h 01h (P+1E)h =57h 02h

(P+1F)h =58h 07h (P+1F)h =58h 07h

(P+20)h =59h 00h (P+20)h =59h 00h (P+21)h =5Ah 00h (P+21)h =5Ah 20h (P+22)h =5Bh 01h (P+22)h =5Bh 00h (P+23)h =5Ch 64h (P+23)h =5Ch 64h (P+24)h =5Dh 00h (P+24)h =5Dh 00h

(P+25)h =5Eh 01h (P+25)h =5Eh 01h

Number of identical banks within Bank Region 1

Number of program or erase operations allowed in region 1: Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations

Number of program or erase operations allowed in other banks while a bank in same region is programming Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations

Number of program or erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations

Types of erase block regions in region 1 n = number of erase block regions with contiguous same-size erase blocks.

Symmetrically blocked banks have one blocking region.

Bank Region 1 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region

Bank Region 1 (Erase Block Type 1) Minimum block erase cycles × 1000

Bank Region 1 (Erase Block T ype 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved 5Eh 01 5Eh 01

(2)

(P+26)h =5Fh 03h (P+26)h =5Fh 03h

(P+27)h =60h 06h (P+28)h =61h 00h

(P+29)h =62h 00h (P+2A)h =63h 01h (P+2B)h =64h 64h (P+2C)h =65h 00h

(P+2D)h =66h 01h

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Bank Region 1 (Erase Block Type 1): Page mode and synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved

Bank Region 1 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized erase blocks

Bits 16-31: n×256 = number of bytes in erase block region

Bank Region 1 (Erase Block Type 2) Minimum block erase cycles × 1000

Bank Regions 1 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved

M58WR064ET, M58WR064EB

M58WR064ET (top) M58WR064EB (bottom)

Description

Offset Data Offset Data

Bank Region 1 (Erase Block Type 2): Page mode and synchronous mode capabilities

(P+2E)h =67h 03h

Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved

Note: 1. The v ari able P is a po i n t er which is defined at CFI offset 15h.

2. Bank Regions. There are two Bank Regions, 1 contains all th e banks t hat are m ade up of main blocks only, 2 contains the ban ks that are made up of the parameter and m ai n blocks.

Table 39. Bank and Erase Block Region 2 Information

M58WR064ET (top) M58WR064EB (bottom)

Offset Data Offset Data

(P+27)h =60h 01h (P+2F)h =68h 0Fh (P+28)h =61h 00h (P+30)h =69h 00h

(P+29)h =62h 11h (P+31)h =6Ah 11h

(P+2A)h =63h 00h (P+32)h =6Bh 00h

Number of identical banks within bank region 2

Number of program or erase operations allowed in bank region 2: Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations

Number of program or erase operations allowed in other banks while a bank in this region is programming Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations

Description

(P+2B)h =64h 00h (P+33)h =6Ch 00h

(P+2C)h =65h 02h (P+34)h =6Dh 01h

(P+2D)h =66h 06h (P+35)h =6Eh 07h

(P+2E)h =67h 00h (P+36)h =6Fh 00h (P+2F)h =68h 00h (P+37)h =70h 00h (P+30)h =69h 01h (P+38)h =71h 01h (P+31)h =6Ah 64h (P+39)h =72h 64h (P+32)h =6Bh 00h (P+3A)h =73h 00h

(P+33)h =6Ch 01h (P+3B)h =74h 01h

Types of erase block regions in region 2 n = number of erase block regions with contiguous same-size erase blocks.

Symmetrically blocked banks have one blocking region.

(2)

Bank Region 2 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region

Bank Region 2 (Erase Block Type 1) Minimum block erase cycles × 1000

Bank Region 2 (Erase Block T ype 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved

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M58WR064ET, M58WR064EB

M58WR064ET (top) M58WR064EB (bottom)

Offset Data Offset Data

(P+34)h =6Dh 03h (P+3C)h =75h 03h

(P+35)h =6Eh 07h

(P+36)h =6Fh 00h (P+37)h =70h 20h (P+38)h =71h 00h (P+39)h =72h 64h (P+3A)h =73h 00h

(P+3B)h =74h 01h

(P+3C)h =75h 03h

Description

Bank Region 2 (Erase Block Type 1): Page mode and synchronous mode capabilities (defined in table 10) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved

Bank Region 2 Erase Block Type 2 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region

Bank Region 2 (Erase Block Type 2) Minimum block erase cycles × 1000

Bank Region 2 (Erase Block T ype 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved

Bank Region 2 (Erase Block Type 2): Page mode and synchronous mode capabilities (defined in table 10) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted

Bits 3-7: reserved (P+3D)h =76h (P+3D)h =76h Feature Space definitions (P+3E)h =77h (P+3E)h =77h Reserved

Note: 1. The v ari able P is a po i n t er which is defined at CFI offset 15h.

2. Bank Regions. There are t wo Bank Regions, Region 1 co ntains all th e banks that are m ade up of main bl ocks only, Regi on 2 contains the banks that are made up of the parameter and main blo ck s.

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APPENDIX C. FLOWCHARTS AND PSEUDO CODES

Figure 21. Program Flowchart an d Ps e ud o C ode

Start

Write 40h or 10h (3)

Write Address

& Data

M58WR064ET, M58WR064EB

program_command (addressToProgram, dataToProgram) {: writeToFlash (addressToProgram, 0x40);

/*writeToFlash (addressToProgram, 0x10);*/ /*see note (3)*/

writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/

Read Status

VPP Invalid

Error (1, 2)

Program

Error (1, 2)

Program to Protected

Block Error (1, 2)

SR7 = 1

YES

SR3 = 0

YES

SR4 = 0

YES

SR1 = 0

YES

End

Note: 1. Status check of SR1 (Pr otected Bl ock), SR3 (VPP Invalid) and SR4 (Prog ram Error) ca n be m a de after ea ch progra m operation or

after a seque nce.

2. If an error is f ound, the Status Register must be cleare d bef ore further Program/Erase Controller operation s.

3. Any addres s within the bank can equall y be used.

do { status_register=readFlash (addressToProgram);

"see note (3)";

/* E or G must be toggled*/

} while (status_register.SR7== 0) ;

if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;

if (status_register.SR4==1) /*program error */ error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;

}

AI06170

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M58WR064ET, M58WR064EB

Figure 22. Dou bl e W or d Pr ogram Flowc ha rt a nd Pseudo code

Start

Write 35h

Write Address 1

& Data 1 (3, 4)

Write Address 2

& Data 2 (3)

Read Status

SR7 = 1

YES

SR3 = 0

YES

SR4 = 0

VPP Invalid

Error (1, 2)

Program

Error (1, 2)

double_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2) { writeToFlash (addressToProgram1, 0x35);

/*see note (4)*/

writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ /*Memory enters read status state after the Program command*/

do { status_register=readFlash (addressToProgram) ;

"see note (4)"

/* E or G must be toggled*/

} while (status_register.SR7== 0) ;

if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;

if (status_register.SR4==1) /*program error */ error_handler ( ) ;

YES

SR1 = 0

YES

End

Note: 1. Status check of SR1 (Pr otected Bl ock), SR3 (VPP Invalid) and SR4 (Prog ram Error) ca n be m a de after ea ch progra m operation or

after a seque nce.

2. If an error is f ound, the Status Register must be cleare d bef ore further Program/Erase operation s.

3. Address 1 an d Address 2 mus t be consec ut ive addres ses differin g only for bit A0.

4. Any addres s within the bank can equall y be used.

Program to Protected

Block Error (1, 2)

if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;

}

AI06171b

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Figure 23. Qua dr upl e Word Program Fl owchart and Pseudo Code

Start

M58WR064ET, M58WR064EB

Write 56h

Write Address 1

& Data 1 (3, 4)

Write Address 2

& Data 2 (3)

Write Address 3

& Data 3 (3)

Write Address 4

& Data 4 (3)

Read Status

SR7 = 1

YES

quadruple_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2, addressToProgram3, dataToProgram3, addressToProgram4, dataToProgram4) { writeToFlash (addressToProgram1, 0x56);

/*see note (4) */

writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */

writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */

writeToFlash (addressToProgram3, dataToProgram3) ; /*see note (3) */

writeToFlash (addressToProgram4, dataToProgram4) ; /*see note (3) */

/*Memory enters read status state after the Program command*/

do { status_register=readFlash (addressToProgram) ;

/"see note (4) "/

/* E or G must be toggled*/

} while (status_register.SR7== 0) ;

SR3 = 0

SR4 = 0

SR1 = 0

End

Note: 1. Status check of SR1 (Pr otected Bl ock), SR3 (VPP Invalid) and SR4 (Prog ram Error) ca n be m a de after ea ch progra m operation or

after a seque nce.

2. If an error is f ound, the Status Register must be cleare d bef ore further Program/Erase operation s.

3. Address 1 to Address 4 mus t be consecutive addresses differi ng only for bi ts A0 and A1.

4. Any addres s within the bank can equall y be used.

YES

VPP Invalid

Error (1, 2)

Program

Error (1, 2)

Program to Protected

Block Error (1, 2)

if (status_register.SR3==1) /*VPP invalid error */

error_handler ( ) ;

if (status_register.SR4==1) /*program error */

error_handler ( ) ;

if (status_register.SR==1) /*program to protect block error */

error_handler ( ) ;

}

AI06977b

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M58WR064ET, M58WR064EB

Figure 24. Program Suspend & Resume Flowchart and Pseudo Code

Start

program_suspend_command ( ) {

Write B0h

Write 70h

Read Status

writeToFlash (any_address, 0xB0) ; writeToFlash (bank_address, 0x70) ;

/* read status register to check if program has already completed */

do { status_register=readFlash (bank_address) ; /* E or G must be toggled*/

SR7 = 1

YES

SR2 = 1

YES

Write FFh

Read data from

another address

Write D0h

Program Continues

Program Complete

Write FFh

Read Data

} while (status_register.SR7== 0) ;

if (status_register.SR2==0) /*program completed */ { writeToFlash (bank_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/

} else { writeToFlash (bank_address, 0xFF) ; read_data ( ); /*read data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/ } }

AI06173

68/82

Figure 25. Block Erase Flowchart and Pseudo Code

Start

erase_command ( blockToErase ) {

Write 20h (2)

Write Block

Address & D0h

writeToFlash (blockToErase, 0x20) ;

writeToFlash (blockToErase, 0xD0) ; /* only A12-A20 are significannt */ /* Memory enters read status state after

the Erase Command */

M58WR064ET, M58WR064EB

/*see note (2) */

Read Status

YES

VPP Invalid

Error (1)

Command

Sequence Error (1)

Erase to Protected

Block Error (1)

SR7 = 1

SR3 = 0

SR4, SR5 = 1

SR5 = 0 Erase Error (1)

SR1 = 0

End

do { status_register=readFlash (blockToErase) ;

/* see note (2) */

/* E or G must be toggled*/

} while (status_register.SR7== 0) ;

if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;

if ( (status_register.SR4==1) && (status_register.SR5==1) ) /* command sequence error */ error_handler ( ) ;

if ( (status_register.SR5==1) ) /* erase error */ error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;

}

Note: 1. If an er ror is found, the Status Registe r m ust be cleared before fu rther Prog ram/Erase operati ons.

2. Any address within the bank can be used also.

AI06174b

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M58WR064ET, M58WR064EB

Figure 26. Erase Suspend & Resume Flowchart and Pseudo Code

Start

Write B0h

Write 70h

Read Status

SR7 = 1

SR6 = 1

Write FFh

Read data from

another block Program/Protection Program Block Protect/Unprotect/Lock

or or

Write D0h

Erase Continues

YES

Erase Complete

Write FFh

Read Data

erase_suspend_command ( ) { writeToFlash (bank_address, 0xB0) ;

writeToFlash (bank_address, 0x70) ; /* read status register to check if erase has already completed */

do { status_register=readFlash (bank_address) ; /* E or G must be toggled*/

} while (status_register.SR7== 0) ;

if (status_register.SR6==0) /*erase completed */ { writeToFlash (bank_address, 0xFF) ;

read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/

} else { writeToFlash (bank_address, 0xFF) ; read_program_data ( ); /*read or program data from another address*/ writeToFlash (bank_address, 0xD0) ; /*write 0xD0 to resume erase*/ } }

70/82

AI06175

Figure 27. Lo ck i ng Ope rations Fl ow c hart and Pseud o C od e

Start

M58WR064ET, M58WR064EB

Write 60h (1)

Write

01h, D0h or 2Fh

Write 90h (1)

Read Block

Lock States

Locking

change

confirmed?

YES

Write FFh (1)

End

locking_operation_command (address, lock_operation) { writeToFlash (address, 0x60) ; /*configuration setup*/

/* see note (1) */

if (lock_operation==LOCK) /*to protect the block*/ writeToFlash (address, 0x01) ; else if (lock_operation==UNLOCK) /*to unprotect the block*/ writeToFlash (address, 0xD0) ; else if (lock_operation==LOCK-DOWN) /*to lock the block*/ writeToFlash (address, 0x2F) ;

writeToFlash (address, 0x90) ;

/*see note (1) */

if (readFlash (address) ! = locking_state_expected) error_handler () ; /*Check the locking state (see Read Block Signature table )*/

writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/ /*see note (1) */

}

Note: 1. Any address wit hi n the ban k ca n equally be used.

AI06176b

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M58WR064ET, M58WR064EB

Figure 28. Protection Register Program Flowchart and Pseudo Code

Start

Write C0h (3)

Write Address

& Data

Read Status

SR7 = 1

YES

SR3 = 0

YES

SR4 = 0

YES

SR1 = 0

YES

End

VPP Invalid

Error (1, 2)

Program to Protected

Block Error (1, 2)

Program

protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (addressToProgram, 0xC0) ;

/*see note (3) */

writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/

do { status_register=readFlash (addressToProgram) ;

/* see note (3) */

/* E or G must be toggled*/

} while (status_register.SR7== 0) ;

if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ;

if (status_register.SR4==1) /*program error */ error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ;

}

AI06177b

Note: 1. Status check of SR1 (Pr otected Bl ock), SR3 (VPP Invalid) and SR4 (Prog ram Error) ca n be m a de after ea ch progra m operation or

after a seque nce.

2. If an error is f ound, the Status Register must be cleare d bef ore further Program/Erase Controller operation s.

3. Any addres s within the bank can equall y be used.

72/82

M58WR064ET, M58WR064EB

Figure 29. Enhanced Factory Program Flowchart

SETUP PHASE VERIFY PHASE

Start

Check SR4, SR3

and SR1 for program,

VPP and Lock Errors

PROGRAM PHASE

Exit

Write 30h

Address WA1

Write D0h

Address WA1

Read Status

SR7 = 0?

YES

SR0 = 0?

YES

Write PD1

Address WA1

Read Status

SR0 = 0?

YES

Write PD2

Address WA2

Write PD1

Address WA1

(

Read Status

SR0 = 0?

YES

Write PD2

Address WA2

(

Read Status

SR0 = 0?

YES

(

Write PDn

Address WAn

Read Status

(

Read Status

SR0 = 0?

YES

Write PDn

Address WAn

(

Read Status

SR0 = 0?

YES

Write FFFFh

Address Block WA1

Note: 1. Address can remain Starting Address WA1 or be incremented.

SR0 = 0?

YES

Write FFFFh

Address Block WA1

Read Status

SR7 = 1?

YES

Check Status

End

EXIT PHASE

AI06160

73/82

M58WR064ET, M58WR064EB

Enhanced Factory Program Pseudo Code

efp_command(addressFlow,dataFlow, n) /* n is the number of data to be programmed */ {

/* setup phase */ writeToFlash(addressFlow[0],0x30); writeToFlash(addressFlow[0],0xD0); status_register=readFlash(any_address); if (status_register.SR7==1){

/*EFP aborted for an error*/ if (status_register.SR4==1) /*program error*/

error_handler();

if (status_register.SR3==1) /*VPP invalid error*/

error_handler();

if (status_register.SR1==1) /*program to protect block error*/

error_handler(); } else{

/*Program Phase*/ do{

status_register=readFlash(any_address);

/* E or G must be toggled*/

} while (status_register.SR 0==1) /*Ready for first data*/ for (i=0; i++; i< n){

writeToFlash(addressFlow[i],dataFlow[i]);

/* status register polling*/

do{

status_register=readFlash(any_address);

/* E or G must be toggled*/ } while (status_register.SR0==1); /* Ready for a new data */

} writeToFlash(another_block_address,FFFFh);

/* Verify Phase */ for (i=0; i++; i< n){

} writeToFlash(another_block_address,FFFFh); /* exit program phase */

/* Exit Phase */ /* status register polling */ do{

} while (status_register.SR 7==0); if (status_register.SR4==1) /*program failure error*/

if (status_register.SR3==1) /*VPP invalid error*/

if (status_register.SR1==1) /*program to protect block error*/

}

writeToFlash(addressFlow[i],dataFlow[i]); /* status register polling*/ do{

status_register=readFlash(any_address);

/* E or G must be toggled*/ } while (status_register.SR0==1); /* Ready for a new data */

status_register=readFlash(any_address); /* E or G must be toggled */

error_handler();

74/82

Figure 30. Quadruple Enhanced Factory Program Flowchart

M58WR064ET, M58WR064EB

SETUP PHASE

FIRST

LOAD PHASE

Check SR4, SR3

and SR1 for program,

VPP and Lock Errors

Exit

Start

Write 75h

Address WA1

Write PD1

Address WA1

Read Status

SR7 = 0?

YES

PROGRAM AND

VERIFY PHASE

Write PD1

Address WA1

Write PD2

Address WA2

Write PD3

Address WA3

Write PD4

Address WA4

Read Status

LOAD PHASE

(

EXIT PHASE

Write FFFFh

Address Block WA1

SR0 = 0?

Check SR4 for

Programming Errors

YES

Last Page?

YES

Note 1. Address can remain Starting Address WA1 (in which case the next Page is programmed) or can be any address in the same block.

2.The address is only checked for the first Word of each Page as the order to program the Words is fixed so subsequent Words in each Page can be written to any address.

End

AI06178b

75/82

M58WR064ET, M58WR064EB

Quadruple Enhanced Factory Program Pseudo Code

quad_efp_command(addressFlow,data Flow,n) /* n is the number of pages to be programmed.*/

{

ror*/

/* Setup phase */ writeToFlash(add ressFlow[0],0x75); for (i=0; i++; i< n){

/*Data Load Phase*/

/*First Data*/ writeToFlash(addressFlow[i],dataFlow[i,0]); /*at the first data of the first page, Quad-EFP may be aborted*/ if (First_Page) {

status_register=readFlash(any_address); if (status_register.SR7==1){

/*EFP aborted for an error*/

if (status_register.SR4==1) /*program error*/

error_handler();

if (status_register.SR3==1) /*VPP invalid error*/

error_handler();

if (status_register.SR1==1) /*program to protect block er-

error_handler();

} } /*2nd data*/

writeToFlash(addressFlow[i],dataFlow[i,1]);

/*3rd data*/

writeToFlash(addressFlow[i],dataFlow[i,2]);

/*4th data*/

writeToFlash(addressFlow[i],dataFlow[i,3]);

/* Program&Verify Phase */

do{

}while (status_register.SR0==1) } /* Exit Phase */ writeToFlash(another_block_address,FFFFh); /* status register polling */ do{

status_register=readFlash(any_address);

/* E or G must be toggled */ } while (status_register.SR7==0); if (status_register.SR 1==1) /*program to protected block error*/

error_handler(); if (status_register.SR 3==1) /*VPP invalid error*/

error_handler(); if (status_register.SR 4==1) /*program failure error*/

error_handler();

}

status_register=readFlash(any_address);

/* E or G must be toggled*/

76/82

M58WR064ET, M58WR064EB

APPENDIX D. COMMAND INTERFACE STATE TABLES

Table 40. Command Interface States - Modify Table, Next State

Next CI State After Command Input

Erase

Block

Erase,

Bank Erase Setup

(3,4)

EFP

Setup

Erase S etup EFP Setup

Quad-

Setup

Quad-EFP

Curren t CI State

Ready

Read

Array

Read y

(2)

Program

setup

(3,4)

Program

Setup

Program

DWP, QWP

Setup

(3,4)

Program

Setup

Lock/CR Setup Ready (Lock Error) Ready Ready (Lock Error)

OTP

Setup

Busy

OTP Busy

Setup Program Busy

Program

Busy Program Busy

Suspend Program Suspended

Setup Ready (error) Erase Busy Ready (error)

Busy Erase Busy

Erase

Program

Suspend

Setup

Busy

Suspend ed

Erase

Program in

Erase

Suspend

Erase Suspended

Program in Erase Suspend Bu sy

Program in Erase Suspend Busy

in Erase

Suspend

Lock/CR Setup

in Erase Suspend

Program in Erase Suspend Suspended

Erase Suspend (Lock Error)

Setup Ready (error) EFP Busy Ready (error)

EFP

Quad

EFP

Busy

Verify

Setup

Busy

EFP Busy

EFP V erify Quad EFP Busy Quad EFP Busy

Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-

tory Progr am , DWP = Doub le Word Program, QWP = Quad ruple Word P rogram, P/ E. C. = Program/ Erase Con troller.

2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data output.

3. The two cycle c ommand should be issu ed to the same bank addres s.

4. If the P/E.C. is active, both cycles are ignored.

5. The Clear St at us Register command clears the Status Register error bits ex cept when th e P/E.C. is busy or suspended.

6. EFP and Quad E FP are all owed o nly w hen S tatu s Regis ter bi t S R0 is se t to ‘0’ .EF P and Q uad EFP ar e busy if Bloc k Add ress is

first EFP Address. Any other comma nds are treated as data.

Confirm

P/E

EFP

Resume,

Block

Unlock

Program/

Erase

Suspend

confirm,

EFP

Confirm

Setup

Program

Suspended

Program

Busy

Erase

Suspen ded

Erase Busy Erase Suspended

Program in

Erase

Suspend

Suspended

Program in

Erase

Suspen d

Program in Erase Suspend Su spe nded

Busy

Erase

Suspend

(6) (6)

(6)

Read

Status

Clear

status

(5)

Ready

Program Busy

Program Suspended

Erase Busy

Program in Erase Suspend Busy

Erase Suspend (Lock Error)

Read Electronic signature,

Read CFI

Query

77/82

M58WR064ET, M58WR064EB

Table 41. Command Interface States - Modify Table, Next Output

Next Output State After Command Input (6)

Erase

Program

Current CI State

Program Setup

Erase Setup

OTP Setup

Program in

Erase Suspend

EFP Setup

EFP B usy

EFP Verify

Quad EFP Setu p

Quad EFP Busy

Lock/CR Setup Lock/CR Setup

in Erase

Suspend

OTP Busy Array S t atus Regist er Output Unchanged

Ready

Program Busy

Erase Bu sy

Program/Erase

Program in

Erase Suspend

Busy

Program in

Erase Suspend

Suspended

Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-

tory Progr am , DWP = Doub le Word Program, QWP = Quad ruple Word P rogram, P/ E. C. = Program/ Erase Con troller.

2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data output.

3. The two cycle c ommand should be issu ed to the same bank addres s.

4. If the P/E.C. is active, both cycles are ignored.

5. The Clear St at us Register command clears the Status Register error bits ex cept when th e P/E.C. is busy or suspended.

6. The output st ate sh ows th e type of data that appea rs at the outpu ts i f the bank addr ess is t he same as the comm a nd addre ss. A bank can be pl aced in Read Array , Read Stat us Register, Read El ectronic S i gnature or Read CFI Query mode , dependin g on the command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the

bank’s output state.

Read

Array

Array Status Register Out put Unchanged

DWP, QWP

(2)

Setup

(3,4)

Block

Erase,

Bank Erase Setup

(3,4)

EFP

Setup

Quad-

EFP

Setup

Confirm

P/E

Resume,

Block

Unlock

confirm,

EFP

Confirm

Status Regi ster

Program/

Erase

Suspend

Read

Status

Clear st atus

(5)

Output

Unchang ed

Output

Unchang ed

Read Electronic signature,

Read CFI

Query

Status

Electronic

Signature/

CFI

78/82

M58WR064ET, M58WR064EB

Table 42. Command Interface States - Lock Table, Next State

Next CI State After Command Input

Curren t CI State

Ready

Lock/CR

(4)

Setup

Lock/CR

Setup

OTP Setup

(4)

Block Lock

Confirm

OTP Setup Ready N/A

Block

Lock-Down

Confirm

Set CR

Confirm

Lock/CR Setup Ready (Lock error) Ready Ready (Lock error) N/A

OTP

Setup

Busy Ready

OTP B usy

Setup Program Busy N/A

Program

Busy Program Busy Ready

Suspend Program Suspended N/A

Setup Ready (error) N/A

Busy Eras e Busy Ready

Erase

Suspend

Lock/CR Setup in

Erase

Erase Suspended N/A

Suspend

Setup Program in Erase Suspend Busy N/A

Program in

Erase

Busy Program in Erase Suspend Busy

Suspend

Suspend Program in E rase Suspen d S uspended N/A

Lock/CR Setup

in Erase Suspe n d

Erase Suspend (Lock error) Erase Suspend

Setup Ready (error) N/A

EFP

QuadEFP

Busy Verify Setup

Busy

EFP Busy

EFP Verify

Quad EFP Busy

(2)

Quad EFP Busy

(2)

Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-

tory Progr am , P/E. C. = Program/Erase Cont rol l er.

2. EFP and Quad EFP are all owed onl y when St atus Reg i st er bit SR0 is set to ‘0’. EFP and Quad EFP are busy if B lock Ad dres s is

first EFP Address. Any other comma nds are treated as data.

3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.

4. If the P/E.C. is active, both cycles are ignored.

5. Illegal com m ands are thos e not defined in the command set.

EFP Exit,

Quad EFP

(3)

Exit

Illegal

Command

(5)

Erase S uspend (Lock

error)

EFP Verify

Ready

EFP Busy EFP Ve rify

Quad EFP

Busy

(2)

Completed

Suspended

(2)

P/E. C.

Operation

N/A

Erase

N/A

Ready

N/A

Ready

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M58WR064ET, M58WR064EB

Table 43. Command Interface States - Lock Table, Next Output

Next Output State After Command Input

Current CI State

Program Setup

Erase Setup

OTP Setup

Program in Erase

Suspend

EFP Setup

EFP B usy

EFP Verify

Quad EFP Setup

Quad EFP Busy

Lock/CR S etup

Lock/CR Setup in

Erase Suspend

OTP Busy Stat us Register Output Unchanged Array

Ready

Program Busy

EraseBusy

Program/Erase

Program in Erase

Suspend Busy

Program in Erase

Suspend

Suspended

Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-

tory Progr am , P/E. C. = Program/Erase Cont rol l er.

2. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.

3. If the P/E.C. is active, both cycles are ignored.

4. Illegal com m ands are thos e not defined in the command set.

Lock/CR

Setup

Status Register Out put Unchanged Array

(3)

OTP Setup

(3)

Block Lock

Confirm

Status Regi ster Array Status Register

Block

Lock-Down

Confirm

Status Regi ster

Set CR

Confir m

EFP Exit,

Quad EFP

(2)

Exit

Illegal

Command

(4)

Output

Unchanged

Output

Unchanged

P/E. C.

Operation

Completed

Output

Unchanged

Output

Unchanged

Output

Unchanged

Output

Unchanged

80/82

REVISION HIST ORY

Table 44. Document Revision History

Date Version Revision Details

08-Apr-2002 -01 First Issue

Part number modified, Synchronous Burst Frequency modified, description of the Automatic Standby mode added. Hexadecimal Code for Quadruple Word Program Setup modified.

20-Jun-2002 -02

21-Oct-2002 2.1

Double/Quadruple Word Program command descriptions modified. Description of the Verify Phase in the Enhanced Factory Program command and the Exit Phase in the Quadruple Enhanced Factory Program command modified. Parameters in Tables 6, 7, 8, 18, 20, 21, 22, 23, 24, 33, 39, 40, 41 and 43 modified and/or specified. Figures 4, 7, 12, 13, 15, 16, 17 and 23 modified. Figure 14 added.

Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 02 equals 2.0). Revision history moved to end of document. Bank numbering modified; Figures 21, 22, 23, 24, 27, 28 and 29 modified. 1st Cycle Addresses modified in Table 5 and note to Figure 13, modified.

“Read Status Register Command”, “Program/Erase Suspend Command”, “Set Configuration Register Command”, “Double Word Program Command”, “Quadruple Word Program Command”, “Enhanced Factory Program Command”, “Quadruple Enhanced Factory Program Command”, “Erase Status Bit (SR5)”, “Wait Configuration Bit (CR8)”, “Asynchronous Read Mode”, “Synchronous Burst Read Mode” and “Single Synchronous Read Mode” paragraphs clarified. Default values added to Table 9; Figure 19, VFBGA56 Daisy Chain - Package Connections (Top view through package), Figure 20, VFBGA56 Daisy Chain - PCB Connection Proposal (Top view through package) and Table 27, Daisy Chain Ordering Scheme added. Notes added to Figures 12, 21, 22, 23, 24, 27, and 28 and Table 14. 85ns Speed Class removed, 80ns Speed Class added. 70ns Speed Class characterized (certain timings modified).

M58WR064ET, M58WR064EB

19-Feb-2003 3.0

Document promoted from Product Preview to full Datasheet status. Automatic Standby mode explained under Asynchronous Read Mode. Minor text changes in Clear Status Register Command, Quadruple Enhanced Factory Program Command and Synchronous Burst Read Mode. Bank Erase Command moved from the Standard to the Factory Program Commands. Number of Bank Erase cycles limited to 100. Erase replaced by Block Erase in Tables 11 and 12, Dual Operations Allowed in Other Banks and the Same Bank, respectively. Overbar removed from WAIT signal in all AC Waveform Figures. Latch Enable waveform modified in Figure 11, Asynchronous Page Read AC Waveforms.

range split into two in T ables 20 and 21, Asynchronous and Synchronous Read

DDQ

AC Characteristics: for V in Table 21, were changed; for V t

, t

GLQV

AVLH

in Table 20 and all the timings in Table 21 were modified.

LLH

= 1.65V to 2.2V, t

DDQ

= 2.2V to 3.3V, t

AVKH

and t

AVQV1

in Table 20, and t

ELKH

, t

EL TV

EHTZ

, t

EHQZ

LLKH

Values corrected in Table 25, VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Package Mechanical Data. Data reserved at addresses 35h and 38h in Table 33, Device Geometry Definition. Data corrected at address offset (P+37)h = 70h in Table 39, Bank and Erase Block Region 2 Information. Quotes removed from Figure 21, Program Flowchart and Pseudo Code.

81/82

M58WR064ET, M58WR064EB

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or o therwise under any patent or patent rights of STMicroelectronics. Specifications menti oned in thi s publicat i on are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products a re not authorized for use as c ri t i cal components in life support dev i ces or systems wi thout exp ress written approval of STMicroel ectronics.

The ST log o i s registered tradem ark of STMicroelectronics All other nam es are the property of th ei r respect ive owners

STMicroelectronics group of companies

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www.st.com

82/82

Datasheet M58WR064ET, M58WR064EB Datasheet (SGS Thomson Microelectronics)

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES SUMMARY

Figure 1. Package

TABLE OF CONTENTS

SUMMARY DESCRIPTION

Figure 2. Logic Diagram Table 1. Signal Names

Figure 3. VFBGA Connections (To p view thro ugh packa ge)

Table 2. Bank Architecture

Figure 4. Me m ory Map

SIGNAL DESCRIPTIONS

Address Inputs (A0-A21). The Address Inputs select the cells i n the memory array to a ccess dur­ing Bus Read operations. During Bus Write opera­tions they control the commands sent to the Command Interface of the internal state machine.

Data Input/Output (DQ0-DQ15). The Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Bus Write operation.

Wait (WAIT). Wai t is an output signal used during synchronous read to indicate whether the dat a on the output bus are valid. This output is high imped­ance when Chip Enable is at V

BUS OPERATIONS

Bus Read. Bus Read operations are used to out­put the contents of the Memory Array, the Elec­tronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at V

Bus Write. Bus Write operations write Com­mands to the memory or latch Input Data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at V Output Enable at V

Address Latch. Address latch operations input valid addresses. Both Chip enable and Latch En­able must be at V

Output Disa bl e . The outputs are high imped­ance when the Output Enable is at V

Standby. Standby di sables most of the internal circuitry allowing a substantial reduction of the cur­rent consumption. The memory is in stand-by when Chip Enable and Reset are at V

Reset. During Reset mode the memory is dese­lected and the outputs are high impedance. The memory is in Reset mode when Reset is at V

Table 3. Bus Operations

COMMAND INTERFACE

Table 4. Command C odes

COMMAND INTERFACE - STANDARD COMMANDS

Read Array Command

Read Status Register Command

Read Electronic Signature Command

Read CFI Query Command

Clear Status Register Command

Block Erase Command

Program Command

Program/Erase Suspend Command

Program/Erase Resu me Command

Protectio n R egist er Progr am C om m and

Set Conf ig uration Regi s te r C om m and

Block Lock Command

Block Unlock Command

Block Lock-Down Command

Table 5. Standard Commands

Table 6. Electronic Signature Codes

Figure 5. Security Block and Protection Register Memory Map

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS

Bank Erase Command

Double Word Program Command

Quadruple Word Program Command

Enhanced Factory Program Command

Quadruple Enhanced Factory Program Command

Table 7. Factory Program Commands

STATUS REGISTER

Table 8. Status Register Bits

CONFIGURATION REGISTER

Read Select Bit (CR15)

X-Latency Bits (CR13-CR11)

Wait Polarity Bit (CR10)

Data Output Configuration Bit (CR9)

Wait Confi guration Bit (C R 8)

Burst Type Bit (CR7)

Valid Clock Edge Bit (CR6)

Wrap Burst Bit (CR3)

Burst length Bits (CR2-CR0)

Table 9. Configuration Register

Table 10. Burst Type Definition

Figure 6. X-Latency a nd Da ta Ou t put C on f ig uration Exam pl e

Figure 7. Wai t Co nf i g ura tio n Exampl e

READ MODES

Asynchronous Read Mode

Synchron ous Burst Rea d M ode

Single Synchronou s Read Mode

DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE

Table 11. Dual Operations Allowed In Other Banks

Table 12. Dual Operations Allowed In Same Bank

BLOCK LOCKING

Reading a Block’s Lock Status

Locked State

Unlocked State

Lock-Down State

Locking Operations During Erase Suspend

Address Inputs (A0-A21). The Address Inputs select the cells i n the memory array to a ccess during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine.

Wait (WAIT). Wai t is an output signal used during synchronous read to indicate whether the dat a on the output bus are valid. This output is high impedance when Chip Enable is at V

Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at V

Bus Write. Bus Write operations write Commands to the memory or latch Input Data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at V Output Enable at V

Address Latch. Address latch operations input valid addresses. Both Chip enable and Latch Enable must be at V

Output Disa bl e . The outputs are high impedance when the Output Enable is at V

Standby. Standby di sables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by when Chip Enable and Reset are at V

Reset. During Reset mode the memory is deselected and the outputs are high impedance. The memory is in Reset mode when Reset is at V