Datasheet M57925L Datasheet (Mitsubishi)

MITSUBISHI HYBRID ICs

M57925L

HYBRID IC FOR DRIVING TRANSISTOR MODULES

DESCRIPTION

M57925L is a Hybrid Integrated Circuit designed for driving Transis­tor Modules QM30DY, QM50DY, etc., in an Inverter application. This
device operates as an isolation amplifier for Transistor Modules due
to the electrical isolation between the input and output, and features
a small outline of 10-pin SIP.

FEATURES

● Electrical isolation between input and output with integrated opto­coupler. V

Propagation delay time ..................................... t

..................................... t

Large load and sink current driving capability

................................................................. I

................................................................I

● Applicable with TTL input

● Small outline, 10-pin SIP package

iso=2500Vrms
PLH=2µs (TYP)
PLH=4µs (TYP)

OH=–1A (MAX)

OLP=–3A (MAX)

APPLICATION

To drive Transistor Modules for Inverter applications

OUTLINE DRAWING Dimensions in mm

33MAX.

21MAX.

0.35±0.2

8.5MAX.

10.0MAX.

3.0MAX.

2.54

2.54✕9=22.86±0.2

1

4.5±1.5

1.8MAX.

7.5MAX.

10

BLOCK DIAGRAM

330Ω

2

1
OPTO-COUPLER

INTERFACE
CIRCUIT

Tr1

10

9
8

7

Tr2

6
5

CIRCUIT DIAGRAM

1

2

Tr2

Tr1

5

10

9

8

7

6

Feb.1999

HYBRID IC FOR DRIVING TRANSISTOR MODULES

ABSOLUTE MAXIMUM RATINGS (Ta=–20 ~ +70°C, unless otherwise noted)

Symbol
VCC
VEE
VI
IOH
IOLP
Viso
Tj
Topg
Tstg

Supply voltage
Supply voltage
Input voltage

Output current
Isolation voltage

Junction temperature
Operating temperature
Storage temperature

Parameter

Conditions
DC
DC
Between terminals ➀ and ➁

Pulse width 10µs, Freq. 2kHz, peak value
Sinewave voltage 60Hz/min. Ta=25°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=8V, unless otherwise noted)

Symbol

IIH
IOH
IOLP
PD
tPLH
tr
tPHL
tf

“H” input current
“H” output current
“L” output peak current
Internal power dissipation
“L-H” propagation delay time
“L-H” rise time
“H-L” propagation delay time
“H-L” fall time

Parameter

Test conditions

VI=5V
Rext=9Ω
Cext=10µF, R2=1Ω
IOH=–0.5A, IOLP=1A, f=2kHz, D.F.=50%
VI=0→4V, Tj=100°C
VI=0→4V, Tj=100°C
VI=5→0V, Tj=100°C
VI=5→0V, Tj=100°C

MITSUBISHI HYBRID ICs

M57925L

Ratings

14
–6

–1 ~ 7

–1

3

Min.

–

–0.8

–
–
–
–
–
–

2500

100

–20 ~ +70

–25 ~ +100

Limits

Typ.

12

–
2

0.35
2
–
4
–

Max.

Vrms

–
–
–
–
4
2
6
3

Unit

V
V
V
A
A

°C
°C
°C

Unit

mA

A
A

W

µs
µs
µs
µs

Feb.1999

PERFORMANCE CURVES

MITSUBISHI HYBRID ICs

M57925L

HYBRID IC FOR DRIVING TRANSISTOR MODULES

PROPAGATION DELAY TIME VS.

AMBIENT TEMPERA TURE (TYPICAL)

4

PLH (µs)

PHL (µs)

“L”-“H” t

3

2

1

0 100

PROPAGATION DELAY TIME “H”-“L” t

CONDITION
VCC=10V,VEE=–4V
R

ext

=9Ω,R2=1Ω

PLH:VIN

I

OHL:VIH

I
load:QM50DY
f=2000Hz, D.F.=50%

25 50 75

AMBIENT TEMPERA TURE Ta (°C) “H” INPUT VOLTAGE VIH (V)

PROPAGATION DELAY TIME VS.

REVERSE SUPPLY VOLTAGE (TYPICAL)

5

PHL (µs)

PLH (µs)

“H”-“L” t

CONDITION
VCC=10V
R

ext

=9Ω,R2=1Ω

PLH:VIN

=0 4V

I

4

I

PHL:VIN

=5 0V

load:QM50DY

3

f=2000Hz, D.F.=50%

a

=100°C

T

=0 4V
=5 0V

t

t

PHL

PLH

t

PHL

PHL (µs)

PLH (µs)

“H”-“L” t

PROPAGATION DELAY TIME “L”-“H” t

1000

D (mW)

PROPAGATION DELAY TIME VS.

“H” INPUT VOLTAGE (TYPICAL)

CONDITION

6

VCC=10V,VEE=–4V
R

ext

=9Ω,R2=1Ω
load:QM50DY
f=2000Hz, D.F.=50%

a

=100°C

T

4

2

0

4.0

4.5 5.0 5.5

INTERNAL POWER DISSIPATION VS.

“H” DUTY FACTOR (TYPICAL)

CONDITION
VCC=10V,VEE=–4V

800

600

V

O

=1.6V

I

OH

=–0.9A

1

=5V,f=2kHz

V

FOR QM50DY

400

t

t

PHL

PLH

2

1
–3.2 –5.2

–3.6 –4.4 –4.8

PROPAGATION DELAY TIME “L”-“H” t

–4.0

ALLOWABLE POWER DISSIPATION VS.

AMBIENT TEMPERATURE

(MAXIMUM RATING)

2.5

D (W)

2.0

1.5

1.0

0.5

0

ALLOWABLE POWER DISSIPATION P

25

0 125

50 7570 100

AMBIENT TEMPERA TURE T

t

PLH

a (°C)

INTERNAL POWER DISSIPATION P

–1000

OH (mA)

“H” OUTPUT CURRENT I

I

OH

200

0

20

0 100

40

=–0.45A

FOR QM30DY

60 80

“H” DUTY FACTOR D. F. (%)REVERSE SUPPLY VOLTAGE VEE (V)

“H” OUTPUT CURRENT VS.

“H” LIMITING RESISTOR (TYPICAL)

–800

–600

–400

CONDITION
VCC=10V,VEE=–4V

IN

=5V,VO=1.5V

V

–200

0

4

020

8

12 16

“H” LIMITING RESISTOR Rext (Ω)

Feb.1999

MITSUBISHI HYBRID ICs

M57925L

HYBRID IC FOR DRIVING TRANSISTOR MODULES

“L” OUTPUT PEAK CURRENT VS.

REVERSE SUPPLY VOLTAGE (TYPICAL)

5

CONDITION

OLP (A)

VCC=10V
f=200Hz, D.F.=1%

4

Ta=25°C
FOR TRANSISTOR MODULES
IC=10A

3

2

1

“L” OUTPUT PEAK CURRENT I

0

–2.4 –4.4

–2.8

–3.2

–3.6 –4.0

REVERSE SUPPLY VOLTAGE VEE (V) “L” OUTPUT VOLTAGE VOL (V)

POWER DISSIPATION OF R

“H” DUTY FACTOR (TYPICAL)

10

CONDITION
VCC=10V,VEE=–4V
V

O

=1.6V

8

I

OH

=–0.9A

FOR QM50DY

ext Rext (W)

6

4

OF R

2

I

40

OH

FOR QM30DY
60 80

AVERAGE POWER DISSIPATION

0

0 10020

R
R
FOR QM50DY

R
R
FOR QM30DY

ext VS.

=–0.45A

2

=1Ω

ext

=9Ω

2

=3.3Ω

ext

=18Ω

REVERSE SUPPLY VOLTAGE VS.

“L” OUTPUT VOLTAGE (TYPICAL)

–3.6

CONDITION

EE (V)

–3.2

VCC=10V,R
R

2

load:QM50DY

a

=25°C

T

=1Ω

ext

=9Ω

–2.8

–2.4

–2.0

REVERSE SUPPLY VOLTAGE V

–1.6

–2.4 –4.4

–2.8

–3.2

–3.6 –4.0

OUTPUT CHARACTERISTIC OF FULL WAVE

RECTIFYING CIRCUIT WITH CENTER-TAPPED

TRANSFORMER (FOR REFERENCE)

14

L(AV) (A)

12

RIPPLE AMPLITUDE

10

8

6

AVERAGE LOAD CURRENT I

4

0 1.00.2

0.4

0.6 0.8

OUTPUT VOL TAGE VO (V)“H” DUTY FACTOR D. F. (%)

V

O

I

L

T

C

1

V

O

T: 8V, 1A✕2 CENTER-TAPPED TRANSFORMER
C1: 4700µF, C2: 470µF

C

2

Z

D

150Ω

Feb.1999

EXPLANATION OF FUNCTION

(cf. Fig. 2, 3, 4, and 5)

MITSUBISHI HYBRID ICs

M57925L

HYBRID IC FOR DRIVING TRANSISTOR MODULES

(1) With low input level (V

in=0 ~ 1V)

Tr1 ...... OFF, Tr2 ...... ON

The base terminal of transistor module is reverse biased with re­spect to its emitter by reverse power supply V

(2) With high input level (V

in=4 ~ 5V)

EE.

Tr1 ...... ON, Tr2 ...... OFF

The base terminal of transistor module is forward biased and
drived by the current I

OH through the resistor Rext.

Typical application circuit

M57925L+5V

12 345678

DRIVER TTL etc.

input

SINK 12mA

V

IN

(3) With low input level (Vin=0 ~ 1V)

Tr1 ...... OFF, Tr2 ...... ON

The base terminal of transistor module is reverse biased as
stated in (1) after flowing reverse reco very pulse current I

OLP. The

steady reverse base current is limited by the internal base-emit­ter resistor R

BE of the transistor module.

1/2QM50DY etc.

LOAD

I

C

I

O

V

O

R

2

+

V

EE

Z

R

ext

D

+

C

1

V

CC

+

C

2

Typical operating waveform

V

IN

0

–I

O

0

V

O

0

V

I

OH(IB1)

I

V

OH

I

OLP(IB2)

V

R

1

t

t

t

OL

Note: IOH and IOLP correspond to base forward current IB1

and base reverse current IB2 of the transistor module
to be driven respectively.

Feb.1999