Page 1
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
Outline 16P4
INPUTS OUTPUTS
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54528P is seven-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
●
High breakdown voltage (BVCEO ≥ 40V)
●
High-current driving (Ic(max) = 150mA)
●
With clamping diodes
●
Driving available with PMOS IC output of 8-18V
●
Wide input voltage range (VI = –40 to +40V)
●
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
PIN CONFIGURATION (TOP VIEW)
CIRCUIT SCHEMATIC
INPUT
20k
20k
2k
COM
OUTPUT
FUNCTION
The M54528P have seven circuits consisting of NPN
Darlington transistors. These ICs have resistance of 20kΩ
between input transistor bases and input pins. A spike-killer
clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are
all connected to the GND pin (pin 8).
The collector current is 150mA maximum. Collector-emitter
supply voltage is 40V maximum.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
CEO
V
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
The diodes shown by broken line are parasite diodes and must
not be used.
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
GND
The seven circuits share the COM and GND.
Unit : Ω
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +40
150
–40 ~ +40
150
40
1.47
–20 ~ +75
–55 ~ +125
V
mA
V
mA
V
W
°C
°C
Aug. 1999
Page 2
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Unit
O
V
IC 0 — 150 mA
VIH
VIL
Output voltage
Collector current
per channel
“H” input voltage
“L” input voltage
Parameter
Percent duty cycle less
than 40%
min typ max
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
VCE (sat)
II
IIR
VF
IR
hFE
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Input reverse current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
CEO = 100µA
I
I = 7V, IC = 150mA
V
I = 7V, IC = 100mA
V
I = 18V
V
I = 35V
V
I = –35V
V
F = 150mA
I
R = 40V
V
CE = 4V, IC = 150mA, Ta = 25°C
V
Limits
0
7
0
—
—
—
40
35
V
V
V
1
Limits
+
0.9
1.9
max
—
1.7
1.4
1.8
5.0
–20
1.6
100
—
V
V
mA
µA
V
µA
—
min typ
40
—
—
1.05
0.95
—
—
—
—
1.15
—
2500
800
—
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
Turn-on time
Turn-off time
CL = 15pF (note 1)
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
V
OPEN
O
R
L
OUTPUT
L
INPUT
Measured device
PG
50Ω C
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
P
= 7V
V
(2) Input-output conditions : RL = 67.5Ω, VO = 10V
(3) Electrostatic capacity C
connections and input capacitance at probes
P-P
O
= 50Ω
L
includes floating capacitance at
Limits
min typ max
—
—
35
300
—
—
ns
ns
Aug. 1999
Page 3
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Thermal Derating Factor Characteristics
2.0
1.5
1.0
0.5
Power dissipation Pd (W)
0
0
25 50 75 100
Ambient temperature Ta (°C)
Duty-Cycle-Collector Characteristics
200
150
100
1~5
6
7
Output Saturation Voltage
Collector Current Characteristics
200
150
100
VI = 7V
50
Collector current Ic (mA)
0
0 0.5 1.0 1.5 2.0
Output saturation voltage V
Duty-Cycle-Collector Characteristics
200
150
100
Ta = 75°C
Ta = 25°C
Ta = –20°C
CE
(sat) (V)
1~3
4
5
6
7
•The collector current values
represent the current per circuit.
50
Collector current Ic (mA)
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0 20406080100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
4
10
7
5
FE
3
3
10
7
5
3
DC amplification factor h
2
10
1
357
10
2
VCE = 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
357
Collector current Ic (mA)
10
•The collector current values
represent the current per circuit.
50
Collector current Ic (mA)
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
0
0 20406080100
Duty cycle (%)
Grounded Emitter Transfer Characteristics
200
VCE = 4V
150
Ta = 75°C
Ta = 25°C
Ta = –20°C
100
50
Collector current Ic (mA)
3
0
01234510
Input voltage V
I
(V)
Aug. 1999
Page 4
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54528P
7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
2.0
1.5
(mA)
I
1.0
Input current I
0.5
0
0
Input Characteristics
Ta = 75°C
Ta = 25°C
Ta = –20°C
5 10152025
Input voltage V
I
(V)
Clamping Diode Characteristics
200
Ta = 75°C
(mA)
F
150
Ta = 25°C
Ta = –20°C
100
50
Forward bias current I
0
0
0.5 1.0 1.5 2.0
Forward bias voltage V
F
(V)
Aug. 1999
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