Datasheet M54523P, M54523FP Datasheet (Mitsubishi)

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION

M54523P and M54523FP are seven-circuit Darlington tran­sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.

FEATURES

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (IC(max) = 500mA)

●

With clamping diodes

●

Driving available with PMOS IC ouput

●

Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and interfaces between standard
MOS-bipolar logic IC

FUNCTION

The M54523P and M54523FP each have seven circuits con­sisting of NPN Darlington transistors. These ICs have resis­tance of 2.7kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin. The output transistor
emitters are all connected to the GND pin (pin 8). The col­lector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum.The M54523FP is enclosed in a
molded small flat package, enabling space-saving design.

PIN CONFIGURATION

IN1→

1

IN2→

2

IN3→

3

IN4→
IN5→
IN6
IN7→
GND

4
5

→

6

7
8

INPUT OUTPUT

→

16

O1

→

15

O2

→

14

O3

→

13

O4

→

12

O5

→O6

11

→O7

10

→COM COMMON

9

16P4(P)

Package type

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

2.7k

5k

The seven circuits share the COM and GND

16P2N-A(FP)

3k

COM
OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

VCEO
IC
VI
IF
VR
Pd
Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +50

500

–0.5 ~ +30

500

50

1.47(P)/1.00(FP)
–20 ~ +75

–55 ~ +125

V

mA

V

mA

V

W

°C
°C

Jan.2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

3.4

Limits

0

—

0

—

400

50

V

mA

—

0

—
—
—

0

200

25
25

0.6

V
V

Limits

min typ* max

50
—
—
—
—
—
—

1000

—

1.2

1.0

1.2

9.5

1.4

—

2500

—

2.4

1.6

1.8
18

2.4

100

—

V
V

mA

V
µA
—

Symbol Unit

Parameter

min typ max

VO Output voltage

Duty Cycle
P : no more than 8%
FP : no more than 8%

Duty Cycle
P : no more than 30%
FP : no more than 25%

I

C ≤ 400mA
C ≤ 200mA

I

3.85

IC

VIH
VIL

Collector current
(Current per 1 cir­cuit when 7 circuits
are coming on si­multaneously)

“H” input voltage
“L” input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V

II

VF
IR
hFE

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

Input current
Clamping diode forward volltage

Clamping diode reverse current
DC amplification factor

* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained un-

der any conditions.

CEO = 100µA

I

I = 3.85V, IC = 400mA

V

I = 3.4V, IC = 200mA

V

I = 3.85V

V

I = 25V

V

F = 400mA

I

R = 50V

V

CE = 4V, IC = 350mA, Ta = 25°C

V

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

NOTE 1 TEST CIRCUIT

Turn-on time
Turn-off time

INPUT

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω

P = 3.85VP-P

V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity C

at connections and input capacitance at probes

OPEN

L includes floating capacitance

CL = 15pF (note 1)

Vo

RL

OUTPUT

L

C

TIMING DIAGRAM

INPUT

OUTPUT

50%

ton toff

Limits

min typ max

—
—

10

120

—
—

50%

ns
ns

50%50%

Jan.2000

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

2.0

M54523P

1.5

M54523FP

1.0

0.5

Power dissipation Pd (W)

0

0

25 50 75 100

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

500

(M54523P)

400

300

200

•The collector current values

represent the current per circuit.

Collector current Ic (mA)

•Repeated frequencyy ≥ 10Hz

100

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80 100

Output Saturation Voltage

Collector Current Characteristics

500

400

300

200

VI = 3.85V

Collector current Ic (mA)

100

0

0 2.00.5 1.0 1.5

Output saturation voltage V

Ta = 75°C
Ta = 25°C
Ta = –20°C

CE(sat)

(V)

Duty Cycle-Collector Characteristics

1

500

(M54523P)

400

2

1

300

3
4

5
6
7

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 75°C

0

0

20 40 60 80 100

2

3
4
5
6
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

(M54523FP)

400

300

200

•The collector current values

represent the current per circuit.

Collector current Ic (mA)

100

•Repeated frequency ≥ 10Hz

•The value the circle represents the

value of the simultaneously-operated circuit.

•Ta = 25°C

0

0

20 40 60 80 100

Duty cycle (%)

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

1

400

300

2

3
4

5

6

7

200

•

The collector current values

Collector current Ic (mA)

100

represent the current per circuit.

•

Repeated frequency ≥ 10Hz

•

The value the circle represents the
value of the simultaneously-operated circuit.

0

0

(M54523FP)

•

Ta = 75°C

20 40 60 80 100

1

2
3

4
5

6

7

Duty cycle (%)

Jan.2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Input Characteristics

16

12

Ta = 75°C
Ta = 25°C
Ta = –20°C

8

Input Current II (mA)

4

0

0 8 16 24 32

Input voltage V

I (V)

Grounded Emitter Transfer Characteristics

500

400

VCE = 4V

300

Ta = 75°C
Ta = 25°C
Ta = –20°C

DC Amplification Factor

Collector Current Characteristics

4

10

7
5

VCE = 4V

Ta = 75°C
Ta = 25°C
Ta = –20°C

10

3

3

7
5

3

DC amplification factor hFE

2

10

10

1

357

10

2

357

10

3

Collector current IcC (mA)

Clamping Diode Characteristics

500

Ta = 75°C

400

Ta = 25°C
Ta = –20°C

300

200

Collector current Ic (mA)

100

0

0

12345

Input voltage V

I (V)

200

100

Forward bias current IF (mA)

0

0 2.00.5 1.0 1.5

Forward bias voltage V

F (V)

Jan.2000