Datasheet M29F200B, M29F200T Datasheet (SGS Thomson Microelectronics)

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

5V±10% SUPPLYVOLTAGEforPROGRAM,
ERASEand READOPERATIONS

FASTACCESSTIME: 55ns
FASTPROGRAMMING TIME
–10µs by Byte / 16µs byWord typical
PROGRAM/ERASECONTROLLER(P/E.C.)
– ProgramByte-by-Byteor Word-by-Word
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Topor Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIP ERASE
MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTIONMODES
ERASESUSPEND and RESUMEMODES
– Readand Program anotherBlock during

Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLESper

BLOCK
20 YEARSDATARETENTION
– Defectivitybelow 1ppm/year
ELECTRONICSIGNATURE
– ManufacturerCode:0020h
– Device Code, M29F200T:00D3h
– Device Code, M29F200B:00D4h

DESCRIPTION

The M29F200 is a non-volatile memory that may
beerasedelectricallyat theblock or chipleveland
programmedin-systemona Byte-by-Byteor Word­by-Word basis using only a single 5V V
For Program and Erase operations the necessary
high voltages are generatedinternally. The device
can also be programmed in standard program­mers.

Thearraymatrixorganisationallowseach blockto
be erased and reprogrammed without affecting
otherblocks. Blockscan be protectedagainst pro­graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application.

CC

supply.

M29F200T

M29F200B

Single Supply Flash Memory

44

1

12 x 20 mm

Figure1. LogicDiagram

V

CC

17

A0-A16

W

E

G

RP

M29F200T
M29F200B

V

SS

SO44 (M)TSOP48 (N)

15

DQ0-DQ14

DQ15A–1
BYTE
RB

AI01986

July 1998 1/33

M29F200T, M29F200B

Figure2A. TSOPPin Connections

1

A15
A14
A13
A12
A11
A10 DQ14

A9

A8
NC
NC

W
RP
NC
NC
RB
NC
NC

A7
A6
A5
A4
A3
A2
A1

M29F200T

12

M29F200B

13

(Normal)

24 25

48

37
36

AI01987

A16
BYTE
V

SS

DQ15A–1
DQ7

DQ6
DQ13
DQ5
DQ12
DQ4
V

CC

DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
V

SS

E
A0

Figure2B. TSOPReverse Pin Connections

A16

BYTE

V

SS

DQ15A–1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4
V

CC

DQ11

DQ3

DQ10

DQ2
DQ9
DQ1
DQ8
DQ0

V

SS

A0

1

M29F200T

12

M29F200B

13

(Reverse)

G

E

24 25

AI01988

48

37
36

A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
NC
A7
A6
A5
A4
A3
A2
A1

Warning: NC = Not Connected. Warning: NC = Not Connected.

Figure2C. SO Pin Connections

Table 1. Signal Names

A0-A16 Address Inputs

NC RP

1
2
3

NC A8

A7

4
5

A6

6

A5
A4

7

A3

8

A2

9

A1

10

A0

11

M29F200T
M29F200B

12
13
14
15
16
17DQ1
18
19
20
21

V

SS

DQ0

DQ8

DQ9

DQ10

DQ3

DQ11

E

G

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
2322

AI01989

WRB

A9
A10
A11
A12
A13
A14
A15
A16
BYTE
V

SS

DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5DQ2
DQ12
DQ4
V

CC

DQ0-DQ7 Data Input/Outputs, Command Inputs
DQ8-DQ14 Data Input/Outputs
DQ15A–1 Data Input/Output or Address Input
E Chip Enable
G Output Enable
W Write Enable
RP Reset / Block TemporaryUnprotect
RB Ready/Busy Output
BYTE Byte/Word Organisation
V

CC

V

SS

Supply Voltage
Ground

Warning: NC = Not Connected.

2/33

M29F200T, M29F200B

Table2. Absolute Maximum Ratings

Symbol Parameter Value Unit

T

A

T

BIAS

T

STG

(2)

V

IO

V

CC

V

(A9, E, G, RP)

Notes: 1. Except for therating ”Operating Temperature Range”, stressesabove those listedin theTable ”AbsoluteMaximum Ratings”

may cause permanent damage to thedevice. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operatingsections of this specification is not implied.Exposure to Absolute Maximum
Rating conditions for extended periods may affectdevice reliability.Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.

2. Minimum Voltage may undershootto–2V during transitionand for less than 20ns.

3. Depends on range.

Ambient Operating Temperature
Temperature Under Bias –50 to 125
Storage Temperature –65 to 150
Input or Output Voltages –0.6to 7 V
Supply Voltage –0.6to 7 V

(2)

A9, E, G, RP Voltage –0.6to 13.5 V

DESCRIPTION(Cont’d)
Instructionsfor Read/Reset, Auto Select for read-

ing the Electronic Signature or Block Protection
status,Programming,Blockand ChipErase,Erase
Suspend and Resume are written to the device in
cyclesofcommandstoa CommandInterfaceusing
standardmicroprocessorwrite timings.

Thedevice is offered in TSOP48(12 x20mm)and
SO44packages.Both normal and reversepinouts
are available for the TSOP48package.

Organisation

TheM29F200is organisedas256Kx8or128Kx16
bitsselectableby the BYTEsignal.When BYTEis
Low the Byte-wide x8 organisationis selected and
the address lines are DQ15A–1 and A0-A16. The
Data Input/Output signal DQ15A–1 acts as ad­dress line A–1 which selects the lower or upper
Byteof the memory word for output on DQ0-DQ7,
DQ8-DQ14 remain at High impedance. When
BYTEis Highthe memoryuses the addressinputs
A0-A16 and the Data Input/Outputs DQ0-DQ15.
Memory control is provided by Chip Enable E,
OutputEnable G and Write Enable W inputs.

AReset/BlockTemporaryUnprotection RPtri-level
input providesa hardware reset when pulled Low,
andwhenheldHigh(atV

)temporarily unprotects

ID

blocks previously protected allowing them to be
programedanderased.EraseandProgramopera­tions are controlledby an internal Program/Erase
Controller(P/E.C.).StatusRegister data outputon
DQ7providesa Data Pollingsignal, and DQ6 and
DQ2provideTogglesignals to indicatethe state of

(1)

(3)

–40 to 125

C

°

C

°

C

°

the P/E.C operations. A Ready/Busy RB output
indicatesthe completionof theinternalalgorithms.

MemoryBlocks

Thedevicesfeatureasymmetrically blockedarchi­tectureprovidingsystemmemory integration.Both
M29F200Tand M29F200B devices have anarray
of 7 blocks, one Boot Block of 16 KBytes or 8
KWords, two Parameter Blocks of 8 KBytes or 4
KWords, one Main Block of 32 KBytes or 16
KWordsand threeMain Blocksof 64 KBytesor 32
KWords.TheM29F200Thas the Boot Block at the
top of the memory address spa ce and the
M29F200B locates the Boot Block starting at the
bottom. The memory maps are showed in Figure

3. Each block can be erasedseparately,any com­bination of blocks can be specified for multi-block
eraseor the entirechipmay beerased. TheErase
operations are managed automatically by the
P/E.C. The block erase operation can be sus­pended in order to read from or program to any
blocknot being ersased, and then resumed.

Block protection provides additionaldata security.
Each block can be separatelyprotected or unpro­tectedagainst Program or Erase on programming
equipment.All previously protected blocks can be
temporarilyunprotectedin the application.

Bus Operations

The following operationscan be performed using
theappropriatebus cycles:Read(Array,Electronic
Signature, Block Protection Status), Write com­mand, Output Disable,Standby,Reset, Block Pro­tection, Unprotection, Protection Verify,
Unprotection Verify and Block Temporary Unpro­tection.See Tables4 and 5.

3/33

M29F200T, M29F200B

Figure3. MemoryMap and Block Address Table(x8)

M29F200B

64K MAIN BLOCK

64K MAIN BLOCK

64K MAIN BLOCK

32K MAIN BLOCK

8K PARAMETER BLOCK

8K PARAMETER BLOCK

16K BOOT BLOCK

AI01990

3FFFFh
3C000h

3BFFFh

3A000h

39FFFh

38000h

37FFFh

30000h

2FFFFh

20000h

1FFFFh

10000h

0FFFFh

00000h

M29F200T

16K BOOTBLOCK

8K PARAMETER BLOCK

8K PARAMETER BLOCK

32K MAIN BLOCK

64K MAIN BLOCK

64K MAIN BLOCK

64K MAIN BLOCK

3FFFFh

30000h

2FFFFh

20000h

1FFFFh

10000h

0FFFFh

08000h

07FFFh

06000h

05FFFh

04000h

03FFFh

00000h

Table3A. M29F200TBlock Address Table

Address Range (x8) Address Range (x16) A16 A15 A14 A13 A12

00000h-0FFFFh 00000h-07FFFh 0 0 X X X
10000h-1FFFFh 08000h-0FFFFh 0 1 X X X
20000h-2FFFFh 10000h-17FFFh 1 0 X X X
30000h-37FFFh 18000h-1BFFFh 1 1 0 X X

38000h-39FFFh 1C000h-1CFFFh 11100
3A000h-3BFFFh 1D000h-1DFFFh 11101
3C000h-3FFFFh 1E000h-1FFFFh 1111X

Table3B. M29F200BBlock AddressTable

Address Range (x8) Address Range (x16) A16 A15 A14 A13 A12

00000h-03FFFh 00000h-01FFFh 0000X

04000h-05FFFh 02000h-02FFFh 00010

06000h-07FFFh 03000h-03FFFh 00011

08000h-0FFFFh 04000h-07FFFh 0 0 1 X X

10000h-1FFFFh 08000h-0FFFFh 0 1 X X X

20000h-2FFFFh 10000h-17FFFh 1 0 X X X

30000h-3FFFFh 18000h-1FFFFh 1 1 X X X

4/33

M29F200T, M29F200B

CommandInterface

Instructions,made up of commandswritten in cy­cles,can be givento theProgram/EraseController
through a Command Interface (C.I.). For added
dataprotection,program or eraseexecutionstarts
after4 or 6 cycles.The first,second,fourthandfifth
cycles are used to input Coded cycles to the C.I.
This Coded sequence is the same for all Pro­gram/Erase Controller instructions. The ’Com­mand’itself and itsconfirmation,when applicable,
are given on the third, fourth or sixth cycles. Any
incorrectcommand or any impropercommand se­quencewill resetthe deviceto ReadArray mode.

Instructions

Seven instructions are defined to perform Read
Array,AutoSelect(to readthe ElectronicSignature
or BlockProtectionStatus),Program,Block Erase,
Chip Erase, Erase Suspend and Erase Resume.
The internal P/E.C. automatically handles all tim­ing and verification of the Program and Erase
operations.The Status Register Data Polling, Tog­gle, Error bits and the RB output may be read at
anytime, duringprogrammingor erase, to monitor
the progress of the operation.

Instructionsare composedof upto six cycles. The
first two cycles input a Coded sequence to the
CommandInterfacewhich iscommontoall instruc­tions (see Table 8). The third cycle inputs the
instruction set-up command. Subsequent cycles
outputthe addressed data,ElectronicSignatureor
Block Protection Status for Read operations. In
orderto giveadditionaldataprotection,the instruc­tionsfor Programand Blockor Chip Eraserequire
furthercommandinputs.ForaPrograminstruction,
the fourth command cycle inputs the addressand
data to be programmed. For an Erase instruction
(Block or Chip), the fourth and fifth cycles input a
furtherCoded sequence before the Erase confirm
commandon thesixth cycle. Erasure of a memory
blockmaybesuspended,inordertoreaddatafrom
anotherblock or to program data inanotherblock,
and then resumed.

When power is first applied or if V

, the command interface is reset to Read

V

LKO

falls below

CC

Array.

SIGNALDESCRIPTIONS

See Figure 1 and Table1.
AddressInputs (A0-A16).The addressinputs for

thememoryarrayarelatchedduringa write opera­tion on the falling edge of Chip Enable E or Write
EnableW. In Word-wide organisationthe address
lines a re A0-A16, in Byte-wide organisation
DQ15A–1acts as an additional LSB address line.

WhenA9 is raisedto V

, eithera Read Electronic

ID

Signature Manufacturer or Device Code, Block
Protection Status or a Write Block Protection or
Block Unprotection is enabled depending on the
combinationof levelson A0,A1,A6, A12 and A15.

Data Input/Outputs (DQ0-DQ7). These In­puts/Outputsare used in theByte-wideand Word­wide organisations. The input is data to be
programmed in the memory array or a command
to be written to the C.I. Both are latched on the
rising edge of Chip Enable E or Write Enable W.
The output is data from the Memory Array, the
Electronic Signature Manufacturer or Device
codes, the Block Protection Status or the Status
registerData Polling bitDQ7, the ToggleBits DQ6
and DQ2, the Error bit DQ5or the EraseTimer bit
DQ3. Outputs are valid when Chip Enable E and
Output Enable G are active. The output is high
impedance when the chip is deselected or the
outputsaredisabledandwhenRPis at aLowlevel.

Data Input/Outputs (DQ8-DQ14and DQ15A–1).

These Inputs/Outputsare additionally used in the
Word-wideorganisation.WhenBYTEis HighDQ8­DQ14 and DQ15A–1 act as the MSB of the Data
Inputor Output, functioningas described for DQ0­DQ7 above, and DQ8-DQ15 are ’don’t care’ for
commandinputs or statusoutputs. When BYTEis
Low,DQ8-DQ14are highimpedance,DQ15A–1is
theAddress A–1 input.

Chip Enable (E). The Chip Enable input activates
the memory control logic, input buffers, decoders
andsenseamplifiers.E Highdeselectsthememory
andreducesthepower consumptiontothestandby
level. E can also be used to control writing to the
commandregister and to the memory array,while
Wremainsat a low level.TheChip Enablemustbe
forcedto V

duringthe Block Unprotectionopera-

ID

tion.
OutputEnable (G). The Output Enable gates the

outputs through the data buffers during a read
operation. When G is High the outputs are High
impedance. G must be forced to V

level during

ID

BlockProtectionand Unprotection operations.
WriteEnable(W). This inputcontrols writingto the

CommandRegisterandAddressandDatalatches.
Byte/Word Organization Select (BYTE). The

BYTEinput selects the outputconfigurationforthe
device: Byte-wide (x8) mode or Word-wide (x16)
mode. When BYTEis Low,the Byte-widemode is
selectedand the data is read and programmedon
DQ0-DQ7. In this mode, DQ8-DQ14 are at high
impedance and DQ15A–1 is the LSB address.
When BYTE is High, the Word-wide mode is se­lected and the data is read and programmed on
DQ0-DQ15.

5/33

M29F200T, M29F200B

Ready/Busy Output (RB). Ready/Busy is an

open-drainoutputandgivestheinternalstateof the
P/E.C. of the device. When RB is Low, the device
is Busy with a Program or Erase operation and it
will not accept any additional program or erase
instructionsexcept the Erase Suspendinstruction.
WhenRBis High,the deviceis readyforanyRead,
Program or Erase operation. The RB will also be
Highwhen the memoryis put in Erase Suspendor
Standbymodes.

Reset/Block Temporary Unprotect Input (RP).

The RP Input provides hardware reset and pro­tected block(s) temporary unprotection functions.
Reset of the memoryis acheived by pulling RP to

for at least 500ns. When the reset pulse is

V

IL

given,ifthememoryis in Read or Standbymodes,
it will be available for new operationsin 50ns after
the rising edge of RP. If the memory is in Erase,
Erase Suspend or Program modes the reset will
take 10µs during which the RB signal will be held

.Theendof thememoryresetwillbeindicated

atV

IL

by the rising edge of RB. Ahardware reset during
anEraseor Programoperationwillcorruptthe data
beingprogrammedor the sector(s)being erased.

Temporaryblock unprotection is made by holding
RP at V

. In this condition previously protected

ID

blockscan be programmed or erased. The transi­tionof RP from V
When RP is returned from V

toVIDmust slowerthan500ns.

IH

to VIHall blocks

ID

temporarilyunprotectedwill be again protected.

V

Supply Voltage. The power supply for all

CC

operations(Read, Programand Erase).

V

Ground. VSSis the reference for all voltage

SS

measurements.

DEVICEOPERATIONS

See Tables 4, 5 and 6.
Read. Read operations are used to output the

contents of the Memory Array, the ElectronicSig­nature,theStatusRegisteror the BlockProtection
Status.Both Chip Enable E and Output Enable G
must be low in order to read the output of the
memory.

Write.Writeoperationsareused to giveInstruction
Commandsto thememoryor tolatch input datato
beprogrammed.Awrite operationisinitiatedwhen
Chip Enable E is Low and Write Enable W is Low
withOutput Enable G High.Addresses are latched
onthe fallingedge ofWorEwhicheveroccurslast.
CommandsandInputDataarelatchedontherising
edgeof W or E whicheveroccurs first.

OutputDisable.Thedata outputsare high imped­ancewhen the OutputEnable G is High with Write
EnableW High.

Standby. The memory is in standby when Chip
EnableE is High and the P/E.C. is idle. The power
consumption is reduced to the standby level and
the outputs are high impedance, independent of
the Output Enable G or Write Enable W inputs.

Automatic Standby. After 150ns of bus inactivity
andwhen CMOSlevels are drivingthe addresses,
the chip automatically enters a pseudo-standby
modewhere consumptionis reducedto the CMOS
standbyvalue, while outputsstill drive the bus.

ElectronicSignature. Two codes identifying the
manufacturer andthe devicecan be read fromthe
memory. The manufacturer’s code for STMi­croelectronicsis20h,thedevicecodeisD3hforthe
M29F200T(Top Boot) and D4h for the M29F200B
(Bottom Boot). These codes allow programming
equipment or applications to automatically match
their interface to the characteristics of the
M29F200. TheElectronicSignatureis outputby a
Read operation when thevoltage applied to A9 is

andaddressinput A1 isLow. The manufac-

atV

ID

turer code is output when the Address input A0 is
Low and the device code when this input is High.
Other Address inputs are ignored. The codes are
output on DQ0-DQ7.

TheElectronic Signaturecan alsobe read, without
raisingA9toV

, by givingthememorythe Instruc-

ID

tion AS. If the Byte-wideconfigurationis selected
thecodesare outputonDQ0-DQ7withDQ8-DQ14
atHigh impedance;if the Word-wideconfiguration
isselected thecodes are output on DQ0-DQ7with
DQ8-DQ15at 00h.

Block Protection. Each block can be separately
protected against Program or Erase on program­ming equipment. Block protection provides addi­tional data security, as it disables all program or
eraseoperations.Thismodeisactivatedwhenboth
A9 and G are raised to V

and an address in the

ID

blockis applied on A12-A16.TheBlock Protection
algorithmis showninFigure14. Blockprotection is
initiatedon the edge of W falling to V
a delayof 100µs,the edge of W rising to V

. Then after

IL

IH

ends
theprotectionoperations.Blockprotectionverifyis
achievedby bringingG, E, A0and A6toV

, while W is atVIHandA9at VID. Underthese

toV

IH

andA1

IL

conditions,reading the data outputwill yield 01h if
the block defined by the inputs on A12-A16 is
protected.Any attempt to program or erase a pro­tectedblockwill be ignored by the device.

6/33

M29F200T, M29F200B

Table4. User Bus Operations

(1)

Operation E G W RP BYTE A0 A1 A6 A9 A12 A15

Read Word V

Read Byte V

Write Word V

Write Byte V
Output Disable V

Standby V

ILVIL

ILVIL

ILVIH

ILVIH

ILVIH

IH

Reset X X X V
Block

Protection
Blocks

Unprotection
Block

Protection
Verify

Block
Unprotection
Verify

Block
Temporary
Unprotection

Notes: 1. X = V

(2,4) V

(2,4)

(2,4)

ILVIDVIL

(4)VIDVIDVIL

VILV

VILV

XX X V

or V

IL

2. Block Address must be given on A12-A16 bits.

3. See Table6.

4. Operation performed onprogramming equipment.

IH

V

V

V

IH

IH

V

V

IH

IH

V

V

IL

IH

V

V

IL

IH

V

V

IH

IH

A0 A1 A6 A9 A12 A15

IH

V

A0 A1 A6 A9 A12 A15

IL

V

A0 A1 A6 A9 A12 A15 Data Input Data Input

IH

V

A0 A1 A6 A9 A12 A15

IL

X X X X X X X Hi-Z Hi-Z Hi-Z

XXVIHX X X X X X X Hi-Z Hi-Z Hi-Z

X X X X X X X Hi-Z Hi-Z Hi-Z

IL

Pulse V

Pulse V

V

IL

IH

V

IL

IH

XXXXVIDXX X X X

IH

XXXXVIDVIHV

IH

V

XVILVIHVILVIDA12 A15 X X

IH

V

XVILVIHVIHVIDA12 A15 X X

IH

X XXXXXX X X X

ID

DQ15

A–1

Data

Output

Address

Input

Address

Input

XXX

IH

DQ8-

DQ14

Data

Output

Hi-Z

Hi-Z

DQ0-DQ7

Data

Output

Data

Output

Data
Input

Data
Input

Block

Protect

(3)

Status

Block

Protect

(3)

Status

Table5. Read ElectronicSignature (followingAS instruction or with A9 = VID)

Org. Code Device E G W BYTE A0 A1

Word-

wide

Manufact.

Code

Device

Code

Manufact.

Code

M29F200T V
M29F200B V

V

VILV

IL

VILV

IL

VILV

IL

V

VILV

IL

V

IH

V

IH

V

IH

V

IH

VILVILDon’t Care 0 00h 20h

IH

V

IH

IH

IL

IH

V

IH

VILVILDon’t Care

Byte-

wide

Device

M29F200T V

IL

VILV

V

IH

V

IL

IH

Code

M29F200B V

IL

VILV

V

IH

V

IL

IH

Other

Addresses

VILDon’t Care 0 00h D3h
VILDon’t Care 0 00h D4h

VILDon’t Care

VILDon’t Care

DQ15

A–1

Don’t
Care

Don’t
Care

Don’t
Care

Table6. Read Block Protectionwith AS Instruction

Code E G W A0 A1 A12 - A16

Protected Block V
Unprotected Block V

V

IL

V

IL

V

IL

IL

IH

V

IH

V
V

V

IL

V

IL

Block Address Don’t Care 01h

IH

Block Address Don’t Care 00h

IH

Addresses

Other

DQ8 ­DQ14

DQ0 -

DQ7

Hi-Z 20h

Hi-Z D3h

Hi-Z D4h

DQ0 - DQ7

7/33

M29F200T, M29F200B

Block Temporary Unprotection. Any previously

protectedblock can be temporarily unprotected in
orderto changestoreddata.Thetemporaryunpro­tection mode is activated by bringing RP to V

ID

During the temporary unprotection mode the pre­viously protected blocks are unprotected.A block
can be selected and data can be modified by
executingtheEraseorPrograminstructionwiththe
RPsignal held at V

. When RPis returnedto VIH,

ID

all the previously protected blocks are again pro­tected.

Block Unprotection. All protectedblocks can be
unprotected on programming equipment to allow
updating of bit contents. All blocks must first be
protectedbefore the unprotectionoperation.Block
unprotectionis activated when A9, G and E are at

and A12, A15 at VIH. The Block Unprotection

V

ID

algorithm is shown in Figure 15. Unprotection is
initiatedbytheedgeofW fallingtoV

.Aftera delay

IL

of 10ms, the unprotection operation will end. Un­protectionverifyis achievedby bringingGand E to

whileA0 is at VIL, A6 and A1 are at VIHandA9

V

IL

remains at V

. In these conditions, reading the

ID

outputdata willyield 00h if theblock definedby the
inputsA12-A16hasbeen succesfullyunprotected.
Eachblock mustbeseparatelyverified bygivingits
address in order to ensure that it has been unpro­tected.

INSTRUCTIONS AND COMMANDS

The Command Interface latches commands writ­ten to the memory. Instructionsare made up from
one or more commands to performRead Memory
Array,ReadElectronicSignature,Read Block Pro­tection, Program, Block Erase, Chip Erase, Erase
Suspend and Erase Resume. Commands are
madeof addressanddatasequences.Theinstruc­tionsrequirefrom1 to 6 cycles,thefirstorfirstthree
ofwhicharealwayswriteoperationsusedtoinitiate
the instruction. They are followed by either further
write cycles to confirm the first command or exe­cute the command immediately. Command se­quencing must be followed exactly. Any invalid
combinationof commands will reset the device to
Read Array. The increased number of cycles has
been chosen to assure maximum data security.
Instructionsare initialised by two initial Coded cy­cleswhich unlockthe CommandInterface.In addi­tion, for Erase, instruction confirmation is again
precededby the twoCoded cycles.

Status RegisterBits

P/E.C.statusis indicatedduring executionbyData
Polling on DQ7, detection of Toggleon DQ6 and
DQ2, or Error on DQ5 and Erase Timer DQ3 bits.

Any read attempt during Program or Erase com­mandexecutionwill automaticallyoutputthesefive
StatusRegisterbits.The P/E.C.automaticallysets

.

bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits
(DQ0, DQ1 and DQ4) are reservedfor future use
and should be masked. See Tables9 and 10.

Data Polling Bit (DQ7). When Programming op­erations are in progress, this bit outputs the com­plement of the bit being programmed on DQ7.
DuringEraseoperation,it outputs a ’0’. After com­pletionof the operation,DQ7 will output the bit last
programmedor a ’1’ after erasing. Data Polling is
valid and only effective during P/E.C. operation,
that is after the fourth W pulse for programmingor
after the sixth W pulse for erase. It must be per­formedat the address being programmedor at an
address within the block being erased. If all the
blocksselectedfor erasureare protected,DQ7 will
beset to ’0’for about100µs, and then return to the
previous addressed memory data value. See Fig­ure11forthe Data Polling flowchart and Figure10
for the Data Polling waveforms.DQ7 will also flag
the Erase Suspend mode by switching from ’0’ to
’1’ at the start of the Erase Suspend. In order to
monitor DQ7 in the Erase Suspend mode an ad­dress within a block being erased must be pro­vided. For a Read Operation in Erase Suspend
mode, DQ7 will output ’1’ if the read is attempted
onablockbeingerasedandthedatavalueon other
blocks. During Program operation in Erase Sus­pendMode, DQ7 will have the samebehaviour as
in the normal program execution outside of the
suspendmode.

Table 7. Commands

Hex Code Command

00h Invalid/Reserved
10h Chip Erase Confirm
20h Reserved
30h Block Erase Resume/Confirm
80h Set-up Erase

90h

A0h Program
B0h EraseSuspend
F0h Read Array/Reset

Read Electronic Signature/
Block Protection Status

8/33

M29F200T, M29F200B

Table8. Instructions

(1)

Mne. Instr. Cyc. 1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc. 7th Cyc.

RD

(2,4)

Read/Reset
MemoryArray

(3,7)

Addr.

1+

Data F0h

Byte AAAAh 5555h AAAAh

(3,7)

Addr.

3+

Word 5555h 2AAAh 5555h

X

Read Memory Array until a new write cycle is initiated.

ReadMemory Array until a new write cycle
isinitiated.

Data AAh 55h F0h

(4)

AutoSelect 3+

AS

Addr.

(3,7)

Word 5555h 2AAAh 5555h

ReadElectronic Signatureor Block
Protection Status until a new write cycle is
initiated. See Note 5 and 6.

Byte AAAAh 5555h AAAAh

Data AAh 55h 90h

PG Program 4

BE BlockErase 6

Byte AAAAh 5555h AAAAh

(3,7)

Addr.

Word 5555h 2AAAh 5555h

Data AAh 55h A0h

Byte AAAAh 5555h AAAAh AAAAh 5555h

(3,7)

Addr.

Word 5555h 2AAAh 5555h 5555h 2AAAh

Program

Address

Program

Data

Read Data Polling or ToggleBit
until Program completes.

Block

Address

Additional

Block

Data AAh 55h 80h AAh 55h 30h 30h

CE ChipErase 6

Addr.

Word 5555h 2AAAh 5555h 5555h 2AAAh 5555h

Byte AAAAh 5555h AAAAh AAAAh 5555h AAAAh

(3,7)

Data AAh 55h 80h AAh 55h 10h

(3,7)

ES

Notes: 1. Commands not interpreted in this table will default to read array mode.

Suspend

Erase

ER

Resume

2. Await of t
before starting any new operation.

3. X = Don’t Care.

4. The first cycles of the RD or AS instructions are followed by read operations.Any number of readcycles can occur after
the command cycles.

5. SignatureAddress bitsA0,A1 at V
Device code.

6. Block Protection Address: A0 at V

7. For Coded cycles address inputs A15 and A16 are don’t care.

8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry,
timeout status can be verified through DQ3 value (see EraseTimerBit DQ3 description).
When full command is entered, read Data Polling or Togglebit until Erase is completed or suspended.

9. Read Data Polling, Togglebits or RB until Erase completes.

10.During Erase Suspend, Read and Data Programfunctionsare allowed in blocks not being erased.

is necessary after a Read/Reset command if the memory was in an Erase or Programmode

PLYH

Erase

(10)

Addr.

1

Data B0h

(3,7)

Addr.

1

Data 30h

will output Manufacturer code (20h). Address bits A0 at VIHandA1 at VILwill output

IL

,A1atVIHand A12-A16 within the Block will outputthe Block Protection status.

IL

X

Read until Togglestops, then read all the dataneeded from any
Block(s) not being erased then Resume Erase.

X

Read Data Polling or ToggleBits untilErase completes or Erase is
suspended another time

(8)

Note 9

9/33

M29F200T, M29F200B

Table 9. Status Register Bits

DQ Name Logic Level Definition Note

’1’

Data

7

Polling

’0’ Erase On-going

DQ

DQ Program On-going

Erase Complete or erase
block in Erase Suspend

Program Complete or data
of non erase block during
Erase Suspend

Indicates the P/E.C. status, check during
Program or Erase, and on completion
before checking bits DQ5 for Program or
Erase Success.

6 ToggleBit

5 Error Bit

4 Reserved

Erase

3

Time Bit

2 ToggleBit

’-1-0-1-0-1-0-1-’ Erase or Program On-going Successive reads output complementary

DQ Program Complete

’-1-1-1-1-1-1-1-’

’1’ Program or Erase Error
’0’ Program or Erase On-going

’1’ Erase Timeout Period Expired

’0’

’-1-0-1-0-1-0-1-’

1

DQ

Erase Complete or Erase
Suspend on currently
addressed block

Erase TimeoutPeriod
On-going

Chip Erase, Erase or Erase
Suspend on the currently
addressed block.
Erase Error due to the
currently addressed block
(when DQ5 = ’1’).

Program on-going, Erase
on-going on another block or
Erase Complete

Erase Suspend read on
non Erase Suspend block

data on DQ6 while Programming or Erase
operations are on-going. DQ6 remains at
constant level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.

This bit is set to ’1’in the case of
Programming or Erase failure.

P/E.C. Erase operation has started. Only
possible command entry is Erase Suspend
(ES).

An additional block to be erased in parallel
can be entered to the P/E.C.

Indicates the erase status and allows to
identify the erased block

1 Reserved
0 Reserved

Notes: Logic level ’1’is High, ’0’ is Low.-0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.

ToggleBit (DQ6). WhenProgrammingor Erasing

operationsare in progress,successiveattemptsto
readDQ6willoutputcomplementarydata.DQ6will
toggle following togglingof either G, or E when G
is low. The operation is completed when two suc­cessivereadsyield thesameoutputdata.Thenext
readwilloutputthe bitlastprogrammedora’1’after
erasing. The toggle bit DQ6 is valid only during
P/E.C. operations,thatis after the fourth W pulse

Erase. If the blocks selected for erasure are pro­tected, DQ6 will toggle for about 100µs and then
returnback toRead. DQ6will beset to’1’if a Read
operationisattemptedonan EraseSuspendblock.
When erase is suspended DQ6 will toggle during
programmingoperations in a blockdifferentto the
blockin EraseSuspend.EitherE or G togglingwill
causeDQ6 to toggle.See Figure 12 forToggleBit
flowchartand Figure 13 for ToggleBit waveforms.

for programming or after the sixth W pulse for

10/33

M29F200T, M29F200B

Table10. Polling and Toggle Bits

Mode DQ7 DQ6 DQ2

Program DQ7 Toggle 1
Erase 0 Toggle Note 1
Erase Suspend Read

(in EraseSuspend
block)

Erase Suspend Read
(outside Erase Suspend
block)

Erase Suspend Program DQ7 Toggle N/A

Note: 1. Toggleif the address is within a block being erased.

’1’ if the address is within a block not being erased.

1 1 Toggle

DQ7 DQ6 DQ2

Toggle Bit (DQ2). This toggle bit, together with
DQ6, can be used to determine the device status
duringthe Eraseoperations.It can alsobeusedto
identify the block being erased. During Erase or
Erase Suspenda read from a block being erased
will cause DQ2 to toggle. A read from a block not
being erased will set DQ2 to ’1’during erase and
to DQ2 during EraseSuspend.During Chip Erase
a read operation will cause DQ2 to toggle as all
blocks are being erased. DQ2 will be set to ’1’
duringprogram operationand whenerase is com­plete. After erase completion and if the error bit
DQ5 is set to ’1’, DQ2 will toggle if thefaulty block
is addressed.

ErrorBit (DQ5). This bit is set to ’1’ by the P/E.C.
when there is a failure of programming, block
erase, or chip erase that results in invalid data in
thememoryblock.In caseofanerrorin blockerase
or program,the blockin whichtheerror occured or
to which the programmed data belongs, must be
discarded. The DQ5 failurecondition will also ap­pearif a usertries to programa’1’ toa locationthat
ispreviouslyprogrammedto ’0’. OtherBlocksmay
stillbeused.Theerrorbit resetsafteraRead/Reset
(RD)instruction. In caseof successof Programor
Erase,the errorbit will be set to ’0’.

Erase Timer Bit (DQ3). This bit is setto ’0’ by the
P/E.C. when the last block Erase command has
been entered to the Command Interface and it is
awaiting the Erase start. When the erase timeout
periodis finished,after80µsto 120µs,DQ3returns
to ’1’.

Coded Cycles

Thetwo Coded cyclesunlockthe CommandInter­face.They are followedby aninput commandor a
confirmationcommand.The Coded cycles consist
of writing the data AAh at address AAAAh in the
Byte-wide configuration and at address 5555h in

the Word-wide configurationduring the first cycle.
During the second cycle the Coded cycles consist
of writing the data 55h at address 5555h in the
Byte-wideconfiguration and at address 2AAAh in
theWord-wideconfiguration.In theByte-widecon­figurationthe addresslines A–1to A14 are valid,in
Word-wideA0to A14arevalid, otheraddresslines
are ’don’t care’. The Coded cycles happenon first
and secondcycles of the commandwrite oron the
fourthand fifth cycles.

Instructions

See Table8.
Read/Reset (RD) Instruction. The Read/Reset

instruction consists of one write cycle giving the
commandF0h.Itcanbeoptionallyprecededbythe
twoCodedcycles.Subsequentreadoperationswill
read the memory array addressed and output the
data read. A wait state of 10µs is necessaryafter
Read/Reset prior to any valid read if the memory
was in an Erase mode when the RD instruction is
given.

Auto Select (AS) Instruction. This instruction
uses the two Coded cycles followed by one write
cycle giving the command 90h to address AAAAh
in the Byte-wideconfigurationor address5555h in
the Word-wide configurationfor command set-up.
A subsequent read will output the manufacturer
code and the device code or the block protection
status dependingon the levels of A0 and A1. The
manufacturer code, 20h, is output when the ad­dresseslinesA0 andA1 areLow,the devicecode,
D3h for Top Boot, D4h for Bottom Boot is output
when A0 is Highwith A1 Low.

The AS instructionalso allows access to the block
protectionstatus.AftergivingtheASinstruction,A0
is set to V

with A1 at VIH, while A12-A16 define

IL

the address of the block to be verified. A read in
these conditions will output a 01h if the block is
protectedand a 00h if the blockis notprotected.

Program (PG) Instruction. This instruction uses
four write cycles. Both for Byte-wide configuration
and for Word-wide configuration. The Program
command A0h is written to address AAAAh in the
Byte-wideconfigurationor to address5555hin the
Word-wideconfigurationonthethirdcycleaftertwo
Codedcycles. Afourth write operationlatches the
Addressonthe fallingedge of W orE and theData
to be written on the rising edge and starts the
P/E.C.Readoperationsoutput the Status Register
bits after the programming has started. Memory
programmingis madeonly by writing’0’in place of
’1’.StatusbitsDQ6andDQ7determineif program­mingison-goingandDQ5allowsverificationofany
possible error. Programming at an address not in
blocks being erased is also possible during erase
suspend. In this case, DQ2 will toggle at the ad­dressbeing programmed.

11/33

M29F200T, M29F200B

Table11. AC MeasurementConditions

High Speed Standard

Input Rise and Fall Times
Input Pulse Voltages 0 to 3V 0.45V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V

≤

10ns

≤

10ns

Figure4. AC TestingInput Output Waveform

High Speed

3V

1.5V

0V

Standard

2.4V

0.45V

Table12. Capacitance

Symbol Parameter TestCondition Min Max Unit

C

IN

C

OUT

Note: 1. Sampled only,not 100% tested.

Input Capacitance VIN=0V 6 pF
Output Capacitance V

(1)

(TA=25°C, f = 1 MHz )

2.0V

0.8V

AI01275B

Figure5. AC TestingLoad Circuit

1.3V

1N914

3.3kΩ

DEVICE

UNDER

TEST

C

L

CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance

=0V 12 pF

OUT

OUT

AI01276B

Block Erase (BE) Instruction. This instruction
uses a minimum of six write cycles. The Erase
Set-upcommand80h is written to addressAAAAh
in the Byte-wideconfigurationor address5555h in
theWord-wideconfigurationon thirdcycleafter the
two Coded cycles. The Block EraseConfirm com­mand30his similarlywrittenonthesixth cycleafter
anothertwo Coded cycles. During the inputof the
secondcommandanaddresswithintheblocktobe
erasedis given andlatched intothe memory.Addi­tional block Erase Confirm commands and block
addresses can be written subsequently to erase

12/33

other blocks in parallel, without further Coded cy­cles. The erase will start after the erase timeout
period (see Erase Timer Bit DQ3 description).
Thus, additional Erase Confirm commands for
other blocks must be given within this delay. The
inputof a newEraseConfirmcommandwill restart
the timeout period.The status of the internaltimer
canbe monitoredthrough the levelof DQ3,if DQ3
is ’0’ the Block Erase Command has been given
andthe timeoutis running,ifDQ3is ’1’, the timeout
hasexpired and the P/E.C.is erasingthe Block(s).
If the second command given is not an erase

M29F200T, M29F200B

Table13. DC Characteristics

=0 to 70°C, –40 to 85°C or –40 to 125°C; VCC=5V±10%)

(T

A

Symbol Parameter Test Condition Min Max Unit

I

I

I

CC1

I

CC1

I

CC2

I

CC3

I

CC4

V

V

V

V

V

I

V

LKO

Note: 1. Sampled only,not 100% tested.

Input Leakage Current 0V ≤ VIN≤ V

LI

Output Leakage Current 0V ≤ V

LO

Supply Current (Read) TTL Byte E = VIL,G=VIH, f = 6MHz 20 mA
Supply Current (Read) TTL Word E = VIL,G=VIH, f = 6MHz 20 mA
Supply Current (Standby) TTL E = V
Supply Current (Standby) CMOS E = V

(1)

Supply Current (Program or Erase)

Input Low Voltage –0.5 0.8 V

IL

Input High Voltage 2 VCC+ 0.5 V

IH

Output Low Voltage IOL= 5.8mA 0.45 V

OL

Output High Voltage TTL IOH= –2.5mA 2.4 V

OH

Output High VoltageCMOS I
A9 Voltage (Electronic Signature) 11.0 12.0 V

ID

A9 Current (Electronic Signature) A9 = V

ID

Supply Voltage(Erase and
Program lock-out)

CC

≤ V

OUT

CC

IH

0.2V 100

±

CC

Byte program, Block or
Chip Erase in progress

= –100µAV

OH

ID

±1 µA
±1 µA

1mA

20 mA

–0.4V V

CC

100

3.2 4.2 V

A

µ

A

µ

confirm or if the Coded cycles are wrong, the
instructionaborts, and the device is resetto Read
Array.It is not necessary to programtheblock with
00h as theP/E.C. will do this automaticallybefore
to erasing to FFh. Read operations after the sixth
rising edge of W or E output the status register
statusbits.

Duringtheexecutionof theeraseby theP/E.C.,the
memoryaccepts onlythe EraseSuspend ES and
Read/ResetRD instructions. Data Polling bit DQ7
returns’0’ while the erasure is in progress and ’1’
when it has completed. The Toggle bit DQ2 and
DQ6 toggle during the erase operation. They stop
when erase is completed. After completion the
StatusRegisterbitDQ5returns’1’iftherehasbeen
an erase failure. In sucha situation,the Togglebit
DQ2 can be used to determine which block is not
correctly erased. In the case of erase failure, a
Read/ResetRDinstructionis necessaryin orderto
resetthe P/E.C.

ChipErase(CE)Instruction.Thisinstructionuses
six write cycles. The Erase Set-up command 80h
is written to address AAAAh in the Byte-wide con­figuration or the address 5555h in the Word-wide
configurationonthe thirdcycleafter thetwoCoded
cycles. The Chip Erase Confirm command 10h is
similarlywrittenon thesixth cycleafter anothertwo
Codedcycles. If the secondcommandgiven is not
aneraseconfirm or if the Codedcyclesarewrong,
the instruction aborts and the device is reset to
ReadArray.Itis notnecessaryto programthearray
with00h firstas theP/E.C.will automaticallydothis
beforeerasingit to FFh. Readoperationsafter the
sixth rising edge of W or E output the Status
Registerbits. Duringtheexecutionof the eraseby
theP/E.C.,Data PollingbitDQ7returns’0’, then’1’
on completion. The Toggle bits DQ2 and DQ6
toggleduringeraseoperationandstopwhenerase
iscompleted.Aftercompletionthe StatusRegister
bit DQ5 returns ’1’ if there has been an Erase
Failure.

13/33

M29F200T, M29F200B

Table14A. Read AC Characteristics

=0 to 70°C, –40 to 85°C or –40 to 125°C)

(T

A

M29F200T / M29F200B

Symbol Alt Parameter Test Condition

t

AVAV

t

AVQV

t

ELQX

t

ELQV

t

GLQX

t

GLQV

t

EHQX

t

EHQZ

t

GHQX

t

GHQZ

t

AXQX

t

PLYH

t

PHEL

t

PLPX

t

ELBL

t

ELBH

t

BLQZtFLQZ

t

BHQVtFHQV

Notes: 1. Sampled only, not 100% tested.

t

Address Validto Next Address Valid E = VIL,G=V

(1)

(2)

(1)

(2)

(1)

(1)

(1,3)

RC

t

Address Valid to Output Valid E = VIL,G=V

ACC

t

Chip Enable Low to Output Transition G = V

LZ

t

Chip Enable Low to Output Valid G = V

CE

Output Enable Low to Output

t

OLZ

Transition

t

Output Enable Low to Output Valid E = V

OE

Chip Enable High to Output

t

OH

Transition

t

Chip Enable High to Output Hi-Z G = V

HZ

Output Enable High to Output

t

OH

Transition

t

Output Enable High to Output Hi-Z E = V

DF

Address Transition to Output

t

OH

Transition

t

RRB

RP Low to Read Mode 10 10 µs

t

READY

t

RP High to Chip Enable Low 50 50 ns

RH

t

RP Pulse Width 500 500 ns

RP

t

Chip Enable to BYTESwitching Low

ELFL

or High

t

ELFH

E=V

E=V

G=V

E=V

IL

IL

IL

IL

IL

IL

IL

IL

IL

,G=V

IL

IL

IL

BYTE Switching Low to Output Hi-Z 15 20 ns
BYTE Switching High to Output Valid 30 30 ns

2. G maybe delayed by up to t

3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.

ELQV-tGLQV

afterthefalling edge of E withoutincreasing t

-55 -70

High Speed

Interface

Standard

Interface

Unit

Min Max Min Max

55 70 ns

55 70 ns

00ns

55 70 ns

00ns

30 30 ns

00ns

15 20 ns

00ns

15 20 ns

00ns

55ns

.

ELQV

Erase Suspend (ES) Instruction. The Block
Eraseoperationmay besuspendedbythis instruc­tion which consists of writing the command B0h
withoutany specificaddress. No Coded cyclesare
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase

14/33

timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhentheP/E.C.is suspended.TheToggle
bitswill stoptogglingbetween0.1µsand 15µs after
the Erase Suspend (ES) command has been writ­ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus­pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from

Table14B. Read AC Characteristics

=0 to 70°C, –40 to 85°C or –40 to 125°C)

(T

A

M29F200T, M29F200B

M29F200T / M29F200B

Symbol Alt Parameter Test Condition

t

AVAV

t

AVQVtACC

t

ELQX

t

ELQV

t

GLQX

t

GLQV

t

EHQX

t

EHQZ

t

GHQX

t

GHQZ

t

AXQX

t

PLYH

t

PHEL

t

PLPX

t

ELBL

t

ELBH

t

BLQZtFLQZ

t

BHQVtFHQV

Notes: 1. Sampled only, not 100% tested.

t

Address Validto Next Address Valid E = VIL,G=V

(1)

(2)

(1)

(2)

(1)

(1)

(1,3)

RC

Address Valid to Output Valid E = VIL,G=V

t

Chip Enable Low to Output Transition G = V

LZ

t

Chip Enable Low to Output Valid G = V

CE

Output Enable Low to Output

t

OLZ

Transition

t

Output Enable Low to Output Valid E = V

OE

Chip Enable High to Output

t

OH

Transition

t

Chip Enable High to Output Hi-Z G = V

HZ

Output Enable High to Output

t

OH

Transition

t

Output Enable High to Output Hi-Z E = V

DF

Address Transition to Output

t

OH

Transition

t

RRB

RP Low to Read Mode 10 10 µs

t

READY

t

RP High to Chip Enable Low 50 50 ns

RH

t

RP Pulse Width 500 500 ns

RP

t

Chip Enable to BYTESwitching Low

ELFL

or High

t

ELFH

E=V

E=V

G=V

E=V

IL

IL

IL

IL

IL

IL

IL

IL

IL

,G=V

IL

IL

IL

BYTE Switching Low to Output Hi-Z 20 30 ns
BYTE Switching High to Output Valid 40 40 ns

2. G maybe delayed by up to t

3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.

ELQV-tGLQV

afterthefalling edge of E withoutincreasing t

-90 -120

Standard

Interface

Standard

Interface

Unit

Min Max Min Max

90 120 ns

90 120 ns

00ns

90 120 ns

00ns

35 50 ns

00ns

20 30 ns

00ns

20 30 ns

00ns

55ns

.

ELQV

a blocknot beingerasedreturnsvalid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc­tions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It willresult in bothDQ2 andDQ6 toggling
whenthedatais beingprogrammed.ARead/Reset

commandwill definitively abort erasure and result
in invaliddata in the blocks being erased.

EraseResume(ER)Instruction. If anEraseSus­pend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Coded cycles.

15/33

M29F200T, M29F200B

Figure 6. ReadMode AC Waveforms

tEHQZ

tGHQX

AI02002

tGHQZ

VALID

tAVAV

VALID

tAVQV tAXQX

tELQV

tELQX tEHQX

tGLQV

tGLQX

tBLQZtELBL/tELBH

OUTPUT ENABLE DATA VALID

ADDRESS VALID

AND CHIP ENABLE

16/33

A0-A16/

A–1

E

G

DQ0-DQ7/

DQ8-DQ15

BYTE

WriteEnable (W) = High

Note:

Table15A. Write AC Characteristics,WriteEnable Controlled

=0 to 70°C, –40 to 85°C or –40 to 125°C)

(T

A

M29F200T, M29F200B

M29F200T / M29F200B

Symbol Alt Parameter

t

AVAV

t

ELWL

t

WLWH

t

DVWH

t

WHDX

t

WHEH

t

WHWL

t

AVWL

t

WLAX

t

GHWL

t

VCHEL

t

WHGL

t

PHPHH

t

PLPX

t

WHRL

t

PHWL

Notes: 1. Sample only, not 100% tested.

2. This timing is for TemporaryBlock Unprotectionoperation.

(1,2)

(1)

(1)

t

Address Valid to Next Address Valid 55 70 ns

WC

t

Chip Enable Low to WriteEnable Low 0 0 ns

CS

t

Write Enable Low to Write Enable High 30 35 ns

WP

t

Input Validto WriteEnable High 25 30 ns

DS

t

Write Enable High to Input Transition 0 0 ns

DH

t

Write Enable High to Chip Enable High 0 0 ns

CH

t

Write Enable High to Write Enable Low 20 20 ns

WPH

t

Address Valid to Write Enable Low 0 0 ns

AS

t

Write Enable Low to Address Transition 45 45 ns

AH

Output Enable High to Write Enable Low 0 0 ns

t

VCSVCC

t

OEH

t

VIDR

t

RP

t

BUSY

t

RSP

High to Chip Enable Low 50 50 µs
Write Enable High to Output Enable Low 0 0 ns
RP Rise Time to V

ID

RP Pulse Width 500 500 ns
Program Erase Valid to RB Delay 30 30 ns
RP High to WriteEnable Low 4 4

-55 -70

High Speed

Interface

Standard

Interface

Unit

Min Max Min Max

500 500 ns

µ

s

POWERSUPPLY
PowerUp

ThememoryCommandInterfaceis reseton power
uptoRead Array.EitherE or Wmust be tiedto V

IH

during Power Up to allow maximum security and
thepossibilityto writea commandonthefirstrising
edge of E and W. Any write cycle initiation is
blockedwhen Vcc is below V

LKO

.

SupplyRails

Normalprecautions must be taken for supplyvolt­age decoupling; each device in a system should
havetheV
close to the V
widths should be sufficient to carry the V

raildecoupledwitha 0.1µFcapacitor

CC

and VSSpins. The PCB trace

CC

CC

pro-

gram and erase currents required.

17/33

M29F200T, M29F200B

Table15B. Write AC Characteristics,WriteEnable Controlled

=0 to 70°C, –40 to 85°C or –40 to 125°C)

(T

A

M29F200T / M29F200B

Symbol Alt Parameter

t

AVAV

t

ELWL

t

WLWH

t

DVWH

t

WHDX

t

WHEH

t

WHWL

t

AVWL

t

WLAX

t

GHWL

t

VCHEL

t

WHGL

t

PHPHH

t

PLPX

t

WHRL

t

PHWL

Notes: 1. Sample only, not 100% tested.

2. This timing is for TemporaryBlock Unprotectionoperation.

(1,2)

(1)

(1)

t

Address Valid to Next Address Valid 90 120 ns

WC

t

Chip Enable Low to WriteEnable Low 0 0 ns

CS

t

Write Enable Low to Write Enable High 45 50 ns

WP

t

Input Validto WriteEnable High 45 50 ns

DS

t

Write Enable High to Input Transition 0 0 ns

DH

t

Write Enable High to Chip Enable High 0 0 ns

CH

t

Write Enable High to Write Enable Low 20 20 ns

WPH

t

Address Valid to Write Enable Low 0 0 ns

AS

t

Write Enable Low to Address Transition 45 50 ns

AH

Output Enable High to Write Enable Low 0 0 ns

t

VCSVCC

t

OEH

t

VIDR

t

RP

t

BUSY

t

RSP

High to Chip Enable Low 50 50 µs
Write Enable High to Output Enable Low 0 0 ns
RP Rise Time to V

ID

RP Pulse Width 500 500 ns
Program Erase Valid to RB Delay 35 50 ns
RP High to WriteEnable Low 4 4

-90 -120

Standard
Interface

Standard

Interface

Unit

Min Max Min Max

500 500 ns

µ

s

18/33

Figure7. WriteAC Waveforms,W Controlled

A0-A16/
A–1

tAVWL

E

M29F200T, M29F200B

tAVAV

VALID

tWLAX

tWHEH

tELWL

G

tWLWHtGHWL

W

tDVWH

DQ0-DQ7/
DQ8-DQ15

V

CC

tVCHEL

RB

Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W.

VALID

tWHRL

tWHGL

tWHWL

tWHDX

AI01991

19/33

M29F200T, M29F200B

Table16A. Write AC Characteristics,Chip EnableControlled

=0 to 70°C, –40 to 85°C or –40 to 125°C)

(T

A

M29F200T / M29F200B

Symbol Alt Parameter

t

AVAV

t

WLEL

t

ELEH

t

DVEH

t

EHDX

t

EHWH

t

EHEL

t

AVEL

t

ELAX

t

GHEL

t

VCHWL

t

EHGL

(1,2)

t

PHPHH

t

PLPX

(1)

t

EHRL

(1)

t

PHWL

Notes: 1. Sample only, not 100% tested.

2. This timing is for TemporaryBlock Unprotectionoperation.

t

WC

t

WS

t
t
t

t

WH

t

CPH

t
t

t

VCS

t

OEH

t

VIDR

t

t

BUSY

t

RSP

Address Validto Next Address Valid 55 70 ns
Write Enable Low to Chip Enable Low 0 0 ns
Chip Enable Low to Chip Enable High 30 35 ns

CP

Input Validto Chip Enable High 25 30 ns

DS

Chip Enable High to Input Transition 0 0 ns

DH

Chip Enable High to Write Enable High 0 0 ns
Chip Enable High to Chip Enable Low 20 20 ns
Address Validto Chip Enable Low 0 0 ns

AS

Chip Enable Low to Address Transition 45 45 ns

AH

Output Enable High Chip Enable Low 0 0 ns
VCCHigh to Write Enable Low 50 50 µs
Chip Enable High to Output Enable Low 0 0 ns
RP Rise TIme to V
RP Pulse Width 500 500 ns

RP

ID

Program Erase Valid to RB Delay 30 30 ns
RP High to Write Enable Low 4 4

-55 -70

High Speed

Interface

Standard

Interface

Unit

Min Max Min Max

500 500 ns

µ

s

20/33

Table16B. Write AC Characteristics,Chip EnableControlled

=0 to 70°C, –40 to 85°C or –40 to 125°C)

(T

A

M29F200T, M29F200B

M29F200T / M29F200B

Symbol Alt Parameter

t

AVAV

t

WLEL

t

ELEH

t

DVEH

t

EHDX

t

EHWH

t

EHEL

t

AVEL

t

ELAX

t

GHEL

t

VCHWL

t

EHGL

(1,2)

t

PHPHH

t

PLPX

(1)

t

EHRL

(1)

t

PHWL

Notes: 1. Sample only, not 100% tested.

2. This timing is for TemporaryBlock Unprotectionoperation.

t

WC

t

WS

t
t
t

t

WH

t

CPH

t
t

t

VCS

t

OEH

t

VIDR

t

t

BUSY

t

RSP

Address Validto Next Address Valid 90 120 ns
Write Enable Low to Chip Enable Low 0 0 ns
Chip Enable Low to Chip Enable High 45 50 ns

CP

Input Validto Chip Enable High 45 50 ns

DS

Chip Enable High to Input Transition 0 0 ns

DH

Chip Enable High to Write Enable High 0 0 ns
Chip Enable High to Chip Enable Low 20 20 ns
Address Validto Chip Enable Low 0 0 ns

AS

Chip Enable Low to Address Transition 45 50 ns

AH

Output Enable High Chip Enable Low 0 0 ns
VCCHigh to Write Enable Low 50 50 µs
Chip Enable High to Output Enable Low 0 0 ns
RP Rise TIme to V
RP Pulse Width 500 500 ns

RP

ID

Program Erase Valid to RB Delay 35 50 ns
RP High to Write Enable Low 4 4

-90 -120

Standard

Interface

Standard
Interface

Unit

Min Max Min Max

500 500 ns

µ

s

21/33

M29F200T, M29F200B

Figure8. WriteAC Waveforms,E Controlled

A0-A16/
A–1

tAVEL

W

tAVAV
VALID

tELAX

tEHWH

tWLEL

G

tELEHtGHEL

E

tDVEH

DQ0-DQ7/
DQ8-DQ15

V

CC

tVCHWL

RB

Note: Address are latched on thefalling edge of E, Data is latchedon the rising edge of E.

VALID

tEHRL

Figure9. Readand WriteAC Characteristics,RP Related

tEHGL

tEHEL

tEHDX

AI01992

22/33

E

W

RB

RP

tPHEL

tPHWL

tPLPX

tPHPHH

tPLYH

AI02091

M29F200T, M29F200B

Table17A. Data Polling and Toggle Bit AC Characteristics

(TA=0 to 70°C, –40 to 85°C or –40 to 125°C)

Symbol Parameter

t

WHQ7V

t

EHQ7V

t

Q7VQV

t

WHQV

t

EHQV

Note: 1. All other timings are defined in Read AC Characteristics table.

Write Enable High to DQ7 Valid(Program, W Controlled) 10 2400 10 2400
Write Enable High to DQ7 Valid(Chip Erase, W Controlled) 1.0 30 1.0 30 sec
Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 30 1.0 30 sec
Q7 Validto Output Valid (Data Polling) 30 30 ns
Write Enable High to Output Valid (Program) 10 2400 10 2400 µs
Write Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 sec
Chip Enable High to Output Valid(Program) 10 2400 10 2400
Chip Enable High to Output Valid(Chip Erase) 1.0 30 1.0 30 sec

(1)

M29F200T / M29F200B

-55 -70

High Speed

Interface

Standard

Interface

Min Max Min Max

Unit

s

µ

s

µ

s

µ

Table17B. Data Polling and Toggle Bit AC Characteristics

(TA=0 to 70°C, –40 to 85°C or –40 to 125°C)

Symbol Parameter

t

WHQ7V

t

EHQ7V

t

Q7VQV

t

WHQV

t

EHQV

Note: 1. All other timings are defined in Read AC Characteristics table.

Write Enable High to DQ7 Valid(Program, W Controlled) 10 2400 10 2400 µs
Write Enable High to DQ7 Valid(Chip Erase, W Controlled) 1.0 30 1.0 30 sec
Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 30 1.0 30 sec
Q7 Validto Output Valid (Data Polling) 35 50 ns
Write Enable High to Output Valid (Program) 10 2400 10 2400
Write Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 sec
Chip Enable High to Output Valid(Program) 10 2400 10 2400 µs
Chip Enable High to Output Valid(Chip Erase) 1.0 30 1.0 30 sec

(1)

M29F200T / M29F200B

-90 -120

Standard

Interface

Standard

Interface

Min Max Min Max

Unit

s

µ

23/33

M29F200T, M29F200B

Figure10. DataPolling DQ7 AC Waveforms

AI01993

ARRAY

READ CYCLE

DATA OUTPUT VALID

ADDRESS (WITHIN BLOCKS)

tAVQV

tELQV

tEHQ7V

tGLQV

VALID

DQ7

tWHQ7V

VALID

tQ7VQV

IGNORE

DATA POLLING (LAST) CYCLE MEMORY

READ CYCLES

DATA POLLING

24/33

A0-A16/

A–1

PROGRAM

OR ERASE

CYCLE OF

LAST WRITE

E

G

W

DQ7

DQ0-DQ6/

DQ8-DQ15

INSTRUCTION

M29F200T, M29F200B

Figure 11. DataPolling Flowchart

START

READ DQ5 &

at VALID ADDRESS

NO

READ DQ7

DQ7

DQ7

DATA

DQ5

DQ7

DATA

FAIL PASS

=

=1

=

YES

YES

NO

YES

NO

Figure 12. Data Toggle Flowchart

START

READ

DQ2, DQ5 & DQ6

DQ6

YES

YES

DQ6

YES

NO

NO

DQ2,

=

TOGGLE

NO

DQ5

=1

READ DQ2, DQ6

DQ2,

=

TOGGLE

FAIL PASS

AI01369

AI01873

Table 18. Program, Erase Times and Program, Erase Endurance Cycles

= 0 to 70°C; VCC=5V±10% or 5V±5%)

(T

A

M29F200T / M29F200B

Parameter

Min Typ

Typical after

100k W/E Cycles

Chip Erase (Preprogrammed) 0.7 0.9 sec
Chip Erase 2.4 2.5 sec
Boot Block Erase 0.6 sec
Parameter Block Erase 0.5 sec
Main Block (32Kb) Erase 0.9 sec
Main Block (64Kb) Erase 1.0 sec
Chip Program (Byte) 2.8 2.8 sec
Byte Program 11 11
Word Program 20 20
Program/Erase Cycles (per Block) 100,000 cycles

Unit

s

µ

s

µ

25/33

M29F200T, M29F200B

Figure13. DataToggle DQ6, DQ2AC Waveforms

AI01994

VALID

tEHQV

tAVQV

tELQV

tGLQV

VALID

tWHQV

STOP TOGGLE

VALID

IGNORE

READ CYCLE

MEMORY ARRAY

READ CYCLE

DATA TOGGLE

26/33

A0-A16/

A–1

DATA

TOGGLE

READ CYCLE

OF ERASE

PROGRAM

CYCLE OF

LAST WRITE

DQ0-DQ1,DQ3-DQ5,DQ7/

E

G

W

DQ6,DQ2

DQ8-DQ15

INSTRUCTION

All other timings are as a normal Readcycle.

Note:

Figure 14. Block Protection Flowchart

M29F200T, M29F200B

Set-up

Protect

Verify

VERIFY BLOCK

A0, A6 = VIL;A1=VIH;A9=VID

A12-A16 IDENTIFY BLOCK

START

BLOCK

on A12-A16

W=V

n=0

G, A9 = VID,

E=V

Wait 4µs

W=V

Wait 100µs

W=V

E, G = V

ADDRESS

IH

IL

IL

IH

IH

PROTECTION

E=V

IL

Wait 4µs

G=V

IL

Wait 60ns

VERIFY

DATA

=

01h

A9 = V

PASS

BLOCK

NO

YES

IH

PROTECT STATUS

++n

=25

A9 = V

FAIL

NO

YES

IH

AI01995B

27/33

M29F200T, M29F200B

Figure15. AllBlocks UnprotectingFlowchart

E, A0 = VIL; A1, A6 = VIH;A9=V

A12-A16 IDENTIFY BLOCK

START

PROTECT

ALL BLOCKS

n=0

W=V

IH

E, G, A9 = V

A12, A15 = V

Wait 4µs

W=V

IL

Wait 10ms

W=V

IH

E, G = V

Set-up

ID

IH

Unprotect

IH

ID

Verify

NEXT

BLOCK

Wait 4µs

G=V

IL

Wait 60ns

BLOCK

VERIFY

PROTECT STATUS

YESNO

DATA

=

00h

++n

NO

= 1000

YES

A9 = V

IH

FAIL PASS

LAST

BLK.

A9 = V

NO

YES

IH

AI01996C

28/33

ORDERING INFORMATION SCHEME

Example: M29F200T -55 N 1 TR

M29F200T, M29F200B

Operating Voltage

F5V±10%

Array Matrix

T TopBoot

B Bottom Boot

Note: 1. Speed obtained with High SpeedMeasurement Conditions.

-55

-70 70ns

-90 90ns

-120 120ns

Speed

(1)

55ns

Package

N TSOP48

12 x 20mm

M SO44

Devicesare shippedfrom the factory with the memorycontent erased (to FFh).

Option

R Reverse

Pinout

TR Tape& Reel

Packing

Temp.Range

1 0 to 70°C
6 –40 to 85°C
3 –40 to 125°C

Fora list ofavailableoptions(Speed,Package,etc...)or for furtherinformationon anyaspect ofthisdevice,
pleasecontactthe STMicroelectronicsSales Officenearest to you.

29/33

M29F200T, M29F200B

TSOP48 Normal Pinout - 48 lead Plastic Thin Small Outline, 12 x 20mm

Symb

Typ Min Max Typ Min Max

A 1.20 0.047
A1 0.05 0.15 0.002 0.006
A2 0.95 1.05 0.037 0.041

B 0.17 0.27 0.007 0.011

C 0.10 0.21 0.004 0.008

D 19.80 20.20 0.780 0.795
D1 18.30 18.50 0.720 0.728

E 11.90 12.10 0.469 0.476

e 0.50 - - 0.020 - ­L 0.50 0.70 0.020 0.028

α

N48 48

CP 0.10 0.004

mm inches

0

°

5

°

0

°

5

°

Drawing is not to scale.

1N

E

N/2

D1

D

DIE

TSOP-a

A2

e

B

A

CP

C

LA1 α

30/33

M29F200T, M29F200B

TSOP48Reverse Pinout - 48 lead Plastic Thin Small Outline, 12 x 20mm

Symb

Typ Min Max Typ Min Max

A 1.20 0.047
A1 0.05 0.15 0.002 0.006
A2 0.95 1.05 0.037 0.041

B 0.17 0.27 0.007 0.011

C 0.10 0.21 0.004 0.008

D 19.80 20.20 0.780 0.795
D1 18.30 18.50 0.720 0.728

E 11.90 12.10 0.469 0.476

e 0.50 – – 0.020 – –
L 0.50 0.70 0.020 0.028

α

N48 48

CP 0.10 0.004

mm inches

0

°

5

°

0

°

5

°

Drawing is not to scale.

1N

E

N/2

D1

D

DIE

TSOP-b

A2

e

B

A

CP

C

LA1 α

31/33

M29F200T, M29F200B

SO44 - 44 lead Plastic Small Outline, 525 mils body width

Symb

Typ Min Max Typ Min Max

A 2.42 2.62 0.095 0.103
A1 0.22 0.23 0.009 0.010

B 0.50 0.020

C 0.10 0.25 0.004 0.010

D 28.10 28.30 1.106 1.114

E 13.20 13.40 0.520 0.528

e 1.27 – – 0.050 – –

H 15.90 16.10 0.626 0.634

L 0.80 – – 0.031 – –
α 3° ––3°––

N44 44

CP 0.10 0.004

mm inches

Drawing is not to scale.

32/33

B

SO-a

hx45°

A

C

e

CP

D

N

E

H

1

LA1 α

M29F200T, M29F200B

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
ofuse ofsuch information nor for any infringement of patents or otherrights of third parties which may result from its use. No license is granted
by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publicationare subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logois a registeredtrademark of STMicroelectronics

 1998 STMicroelectronics - All Rights Reserved

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33/33