Datasheet M29F102BB70N1T, M29F102BB70K1, M29F102BB55N1T, M29F102BB50N1T, M29F102BB50K1 Datasheet (SGS Thomson Microelectronics)

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1/21July 2000
M29F102BB
1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory
SINGLE 5V±10% SUPPL Y VOLTAGE for
PROGRAM, ERAS E and READ O PER AT IONS
ACCESS TIME: 35ns
PROGRAMMING TIME
5 MEMORY BLOCKS
– 1 Boot Block (Bottom Location) – 2 Parameter and 2 Main Blocks
PROGRAM/ERA SE CON T ROL LER
– Embedded Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ER ASE CYCL ES per
BLOCK
M28F102 COMPATIBLE
– Pin-out and Read Mode
20 YEARS DATA RETENTI ON
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h – Bottom Device Code M29F102BB: 0097h
TSOP40 (N)
10 x 14mm
PLCC44 (K)
Figure 1. Logic Diagram
AI02130C
16
A0-A15
W
DQ0-DQ15
V
CC
M29F102BB
E
V
SS
16
G
RP
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M29F102BB
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Figure 2. PLCC Connections
AI02131C
A14
A11
A7
A3
23
DQ6 DQ5 DQ4
DQ3
DQ2
NC
A2
DQ12
DQ8 V
SS
NC
DQ11 DQ10
12
A15
A9
1
DQ15
V
SS
A12
DQ13
A5
44
NC
NC
M29F102BB
DQ14
A13
A4
NC
A6
34
DQ1
DQ9 A10
A8DQ7
DQ0
G
A0
A1
RP
E
W
V
CC
Figure 3. TSOP Connections
DQ6
DQ3
DQ2
DQ13
DQ8
DQ7
DQ10
DQ9
A14
A8
A11
A10
A4
A15
A9
G
A7
A2
DQ1
DQ0
A0
A1
A3
NC
W
E
DQ14
RP
V
CC
DQ15
AI02132C
M29F102BB
10
1
11
20 21
30
31
40
V
SS
A13
A12
A6 A5
DQ11
DQ12
DQ5
DQ4
V
SS
Table 1. Signal Names
A0-A15 Address Inputs DQ0-DQ15 Data Inputs/Outputs E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
V
CC
Supply Voltage
V
SS
Ground
NC Not Connected Internally
SUMMARY DESCRIPTION
The M29F102BB is a 1 Mbit (64Kb x16) non-vola­tile memory that can be read, erased and repro­grammed. These operations can be performed using a single 5V supply. On power-up the memo­ry defaults to its Read m ode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is pos sible to pres erve valid data while old data is erased. Each block can be protected independently to prev ent accidental Program or Erase commands from modifying the memory. Program and Erase com m ands are wri t­ten to the Command Interface of t he memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase op eration can be de tected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
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M29F102BB
The blocks in the memory are as ymmetrically ar­ranged, see Table 3, Block Addresses. The first 32 Kwords have been divided into four additional blocks. The 8 Kword Boot Block can be used for small initialization code to start the microproces­sor, the two 4 Kword Parameter Blocks can be used for parameter storage and th e remaining 16 Kwords are a small Main Block where the applica­tion may be stored.
Chip Enable, Output Enable and Write Enable sig­nals control the bus operation of the memory. They allow simple conne ction to most m icropro­cessors, often without additional logic.
The memory is offered in PLCC44 and TSOP40 (10 x 14mm) packages and it is suppl ied with all
the bits erased (set to ’1’).
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the ratin g "Operating Temperat ure Range", stresse s above th ose listed in the Tabl e " A bsolute M aximum Rat i ngs" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indi cated in t he Operating secti ons of thi s specif i cation is not imp l i ed. Exposure to Ab solute Maxi m um Rati ng condi ­tions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ­ity docum en ts .
2. Mini m um Voltage may undershoot to –2V duri ng transiti on and for less t han 20ns during transit io ns.
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature 0 to 70 °C
T
BIAS
Temperature Under Bias –50 to 125 °C
T
STG
Storage Temperature –65 to 150 °C
V
IO
(2)
Input or Output Voltage –0.6 to 6 V
V
CC
Supply Voltage –0.6 to 6 V
V
ID
Identification Voltage –0.6 to 13.5 V
Table 3. Bottom Boot Block Addresses, M29F102BB
#
Size
(KWords)
Address Range
4 32 8000h-FFFFh 3 16 4000h-7FFFh 2 4 3000h-3FFFh 1 4 2000h-2FFFh 0 8 0000h-1FFFh
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M29F102BB
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SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Sign al Names, for a brief overview of the signals connect­ed to this device.
Address Inputs (A0-A15). The Address Inputs select the cells i n the memory array to a ccess dur­ing Bus Read operations. During Bus Write opera­tions they control the commands sent to the Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ15). The Data In­puts/Outputs output the data stored at the selected address during a Bus Read operation. During Bus Write operations DQ0-DQ7 represent the com­mands sent to the Command Interface of the inter­nal state machine; the Command Interface does not use DQ8-DQ15 to decode the commands.
Chip Enable (E
). The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write op­erations to be performed. When Chip Enable is High, V
IH
, all other pins are ignored.
Output Enable (G
). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W
). The Write Enable, W, controls
the Bus Write operation of the memory’s Com­mand Interf a c e .
Reset/Block Temporary Unprotect (RP
). The Re-
set/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to tem­porarily unprotect all blocks that have been pro­tected.
A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V
IL
, for at least
t
PLPX
. After Reset/Block Temporary Unprotect
goes High, V
IH
, the memory will be ready for Bus
Read and Bus Write operations after t
PHEL
or t
PLYH
, whichever occurs last. See Table 13 and Figure 11, Reset/Temporary Unprotect AC Char­acteristics for more details.
Holding RP
at VID will temporarily unprotect the protected blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from V
IH
to VID must be slower than
t
PHPHH
.
Reset/Block Temporary Unprotect can be left un­connected. A weak internal pull-up resistor en­sures that the memory always operates correctly.
V
CC
Supply Voltage. The VCC Supply Voltage
supplies the power for all operations (Read, Pro­gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the L ockout Voltage, V
LKO
. This prevents Bus Write operations from ac­cidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memo­ry contents being altered will be invalid.
A 0.1µF capacitor should be connected between the V
CC
Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations, I
CC3
.
Vss Ground. The V
SS
Ground is the reference
for all voltage measurements.
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M29F102BB
Table 4. Bus Operations
Note: X = VIL or VIH.
Operation E G W Address Inputs
Data
Inputs/Outputs
Bus Read
V
IL
V
IL
V
IH
Cell Address Data Output
Bus Write
V
IL
V
IH
V
IL
Command Address Data Input
Output Disable X
V
IH
V
IH
XHi-Z
Standby
V
IH
XXX Hi-Z
Read Manufacturer Code
V
IL
V
IL
V
IH
A0 = VIL, A1 = VIL, A9 = VID, Others V
IL
or V
IH
0020h
Read Device Code
V
IL
V
IL
V
IH
A0 = VIH, A1 = VIL, A9 = VID, Others V
IL
or V
IH
0097h
BUS OPERATIONS
There are five standard bus operations that control the device. These are Bus Read, Bus Wri te, Out­put Disable, Standby and Automatic Standby. See Table 4, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enabl e o r Write Enable are ignored by t he mem ory and do not a f­fect bus operations.
Bus Read. Bus Read operations read from the memory cells, or specific registers in the Com­mand Interface. A valid Bus Read operation in­volves setting the desired address on the Address Inputs, applying a Low sig nal, V
IL
, to Chip Enable and Output Enable and keeping Write Enable High, V
IH
. The Data Inputs/Outputs will output the value, see Figure 8, Rea d Mode AC Wav eforms, and Table 11, Read AC Characteristics, for details of when the output becomes valid.
Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desire d address on t he Ad­dress Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs a re latched by the Com­mand Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output En­able must remain High, V
IH
, during the whole Bus Write operation. See Figures 9 and 10, Write AC Waveforms, and Tables 12 and 13, Write AC Characteristics, for details of the timing require­ments.
Output Disa bl e . The Data Inputs/Outputs are in the high impedance s tate when Output Enable is High, V
IH
.
Standby. When Chip Enable is High, V
IH
, the memory enters Standby mode and the Data In­puts/Outputs pins are placed in the high-imped-
ance state. To reduce the S upply Current to the Standby Supply Current, I
CC2
, Chip Enable should
be held within V
CC
± 0.2V. For the Standby current
level see Table 10, DC Characteristics. During program or erase operations the memory
will continue to use the Program/Erase Supply Current, I
CC3
, for Program or Erase operations un-
til the operation completes. Automatic Standby. If CMOS levels (V
CC
± 0.2V) are used to drive the bus and the bus is inactive for 150ns or more the memory enters Automatic Standby where the internal Supply Current is re­duced to the Standby Supply Current, I
CC2
. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protec tion. These bus opera­tions are intended for use by programming equip­ment and are not usually used in applications. They require V
ID
to be applied to some pins.
Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying t he signals listed in Table 4, Bus Operations.
Block Protection and Blocks Unprotection. Each block can be separately protected against acci­dental Program or Erase. Protected blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on pro­gramming equipment and the other for in-system use. For further information refer to Application Note AN1122, Applying P rotection and Unp rotec­tion to M29 Series Flash.
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COMMAND INTERFACE
All Bus Write operations t o the me mory are in ter­preted by the Command Interface. Commands consist of one or more sequential Bus Write oper­ations. Failure to observe a valid sequence of Bus Write operations will result in the memory return­ing to Read mode. The long command sequences are imposed to maximize data security.
The commands are summarized in Table 5, Com­mands. Refer to Table 5 in conjunction with the text descriptions below.
Read/Reset Command. The Read/Reset com­mand returns the memory to its Read mode where it behaves like a ROM or EPROM. It also resets the errors in the Status Register. Either one or three Bus Write operations can be u sed to issue the Read/Reset command.
If the Read/Reset command is issued during a Block Erase operation or following a Programming or Erase error then the memory will take upto 10
µs
to abort. During the abort period no valid data can be read from the mem ory. Issuing a Read/Reset command during a Block Erase operation will leave invalid data in the memory.
Auto Select Command. The Auto Select com­mand is used to read the Manufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are re­quired to issue the Auto Select command. Once the Auto Select comma nd is issued the memory remains in Auto Select mode unt il another com­mand is issued.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = V
IL
and A1 = VIL. The other address bits
may be set to either V
IL
or VIH. The Manufa cturer
Code for STMicroelectronics is 0020h. The Device Code can be read using a B us Read
operation with A0 = V
IH
and A1 = VIL. The other
address bits may be set to e ither V
IL
or VIH. The
Device Code for the M29F102BB is 0097h. The Block Protecti on St at us of e ac h bl ock can be
read using a Bus Rea d operation with A0 = V
IL
,
A1 = V
IH
, and A12-A15 specifying the add ress of the block. The other address bits may be set to ei­ther V
IL
or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output.
Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command re­quires four Bus Write operations, the final write op­eration latches the address and data in the internal
state machine and starts the Program/Erase Con­troller.
If the address falls in a pro tected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given.
During the program operat ion the memo ry will ig­nore all commands. I t is n ot poss ible t o iss ue any command to abort or pause the operation. Typical program times are given in Table 6. Bus Read op­erations during the program o peration will output the Status Register on the Data Inputs/Outputs. See the section on the S tatus Register for more details.
After the program operation has completed the memory will return to the Read mode, unle ss an error has occurred. When an error occurs the memory will continue to output the Status Regis­ter. A Read/Reset command must be issued to re­set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ bac k to ’1’. One of the E rase Com­mands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memo­ry. When the access time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these com­mands. Three Bus Write operations are requ ired to issue the Unlock Bypass command.
Once the Unlock Bypas s command has bee n is­sued the memory will only accept the Unloc k By­pass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode.
Unlock Bypass Program Command. The Un­lock Bypass Prog ram comma nd can be used to program one address in memory at a time. The command requires two B us Write operations, the final write operation latches the address and data in the internal stat e machine and starts th e Pro­gram/Erase Controller.
The Program operation using the Unlock Bypass Program command behaves identically to the Pro­gram operation using the Program command. A protected block cannot be programmed; the oper­ation cannot be aborted and the Status Register is read. Errors must be reset using the Read/Re set command, which l eaves the d evice in Unlo ck By­pass Mode. See the Program command for details on the behavior.
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M29F102BB
Table 5. Commands
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Com m and Interface only uses addr ess bits A0-A10 a nd DQ0-DQ7 to ver i f y the commands, the upper address bi ts and the upper data
bits are Do n’ t Care.
Read/Re set. After a Read/Reset command, read the memory as normal until another command is issued. Auto Select. After an Auto Select com m and, read Manufacturer ID, Device ID or Block Protection Status. Program, Unlock Bypass Program, Ch ip Erase, Bl o ck E r ase. After these command s read t he St atus R egister until t he Pro gram/Er ase
Controller complet es and the mem o ry returns to Re ad Mode. Add additional B l ocks during B l ock Erase Comm and with addi ti onal Bus Write Operation s until the Timeout Bit is set .
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands
on non-era sing blocks as normal. Erase Resume. After the E ras e Res ume c omman d the s uspe nde d Er ase o pe ration re sum es, read th e Stat u s Reg ister u ntil the Prog ram/
Erase Cont roller compl etes and th e m emory returns to Read Mo de.
Command
Length
Bus Write Operations
1st 2nd 3rd 4th 5th 6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
1X F0
3 555 AA 2AA 55 X F0 Auto Select 3 555 AA 2AA 55 555 90 Program 4 555 AA 2AA 55 555 A0 PA PD Unlock Bypass 3 555 AA 2AA 55 555 20 Unlock Bypass
Program
2X A0PAPD
Unlock Bypass Reset 2 X 90 X 00 Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30 Erase Suspend 1 X B0 Erase Resume 1 X 30
Unlock Bypass Reset Command. The Unlock Bypass Reset command can be used to return t o Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command.
Chip Erase Command. The Chip Erase com­mand can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protect e d th e Chip Erase op erat i on ap-
pears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored.
During the erase operation the memory will ignore all commands. It is not possible to issue any com­mand to abort the operation. Typical chip erase times are given in Table 6. All Bus Read opera­tions during the Chip E rase operation will output the Status Register on the Data Inputs/Outputs. See the section on the S tatus Register for more details.
After the Chip Erase operation has completed t he memory will return to the Read Mode, unle ss an error has occurred. When an error occurs the memory will continue to output the Status Regis­ter. A Read/Reset command must be issued to re­set the error condition and return to Read Mode.
The Chip Erase Command sets all of the bits in un­protected blocks of the memory to ’1’. All previous data is lost.
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M29F102BB
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Block Erase Command. The Block Erase com­mand can be use d to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts
the Program/Erase Controller about 50µs after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50µs of the last block. The 50µs timer restarts when an additional block is selected. The Status Register can be read after the sixth Bus Write operation. See the Status Register for details on how to identify if the Program/Erase Controller has started the Block Erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are p rotected the Block Erase operation appears to start but will terminate within about 100µs, leaving the data un­changed. No error condition is given when protect­ed blocks are ignored.
During the Block Erase operation the me mory wi ll ignore all commands except the Erase Susp end and Read/Reset commands. Typical block erase times are given in Table 6. All Bus Read opera­tions during the B lock E rase o peration will ou tput the Status Register on the Data Inputs/Outputs. See the section on the S tatus Register for more details.
After the Block Erase operation has completed the memory will return to the Read Mode, unle ss an error has occurred. When an error occurs the memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re­set the error condition and return to Read mode.
The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost.
Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation.
The Program/Erase Controller will sus pend within 15µs of the Erase Suspend Command being is­sued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediate ly and wi ll start im­mediately when the Erase Resume Comm and is issued. It will not be possible to select any further blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. Reading from blocks that are being erased will output the Status Register. It is also possible to enter the Auto Select mode: the memory will behave as in the Auto Select mode on all blocks until a Read/Reset command returns the memory to Erase Suspend mode.
Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller from Erase Suspend. An erase can be suspended and resumed more than once.
Table 6. Program, Erase Times and Progra m , Erase Endurance Cycles
(T
A
= 0 to 70°C)
Note: 1. TA = 25°C, VCC = 5V.
Parameter Min
Typ
(1)
Typical after
100k W/E Cycles
(1)
Max Unit
Chip Erase (All bits in the memory set to ‘0’) 0.6 0.6 sec Chip Erase 1.3 1.3 6 sec Block Erase (32 KWords) 0.6 0.6 4 sec Program 8 8 150 µs Chip Program 0.6 0.6 2.5 sec Program/Erase Cycles (per Block) 100,000 cycles
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M29F102BB
STATUS REGISTER
Bus Read operations from any address always read the Status Register during Program and Erase operations. It is also read during Erase Sus­pend when an address within a block being erased is accessed.
The bits in the Status Register are summarized in Table 7, Status Register Bits.
Data Polling Bit (DQ7). The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its opera­tion or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling Bit outputs the complement of the bit being pro­grammed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the ad­dress just programmed o utput DQ7, not its com­plement.
During Er ase ope rations the Data Polling Bit ou t-
puts ’0’, the complement of the erased state of DQ7. After successful completion of the Erase op­eration the memory returns to Read Mode.
In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the Program/Erase Controller has suspended the Erase operation.
Figure 4, Data Polling Flowchart, gives an exam­ple of how to use the Data Polling Bit. A Valid Ad­dress is the address being programmed or an address within the block being erased.
Toggle Bit (DQ6). The Togg le Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has re­sponded to an Erase Suspen d. The Toggle Bit is output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle Bit changes from ’0’ to ’ 1’ to ’ 0’, et c., with su cces­sive Bus Read operations at any address. After successful completion of the operation the memo­ry returns to Read mode.
During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation.
Figure 5, Data Toggle Flowchart, g ives an exam­ple of how to use the Data Toggle Bit.
Error Bit (DQ5). The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error B it is set to ’1’ when a Pro­gram, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Rese t command must be iss ued before other commands are issued. The E rror bit is output on DQ5 when the Status Register is read.
Note that the Program command cannot change a bit set at ’0’ back to ’1’ and attempting to do so may or may not set DQ5 at ‘1’. In both cases, a succes­sive Bus Read operation will show the bit is still ‘0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
Table 7. Status Register Bits
Note: Unspecif i ed data bits sh ould be ignored.
Operation Address DQ7 DQ6 DQ5 DQ3 DQ2
Program Any Address DQ7
Toggle 0 ––
Program During Erase Suspend Any Address DQ7
Toggle 0
Program Error Any Address DQ7
Toggle 1
Chip Erase Any Address 0 Toggle 0 1 Toggle
Block Erase before timeout
Erasing Block 0 Toggle 0 0 Toggle
Non-Erasing Block 0 Toggle 0 0 No Toggle
Block Erase
Erasing Block 0 Toggle 0 1 Toggle
Non-Erasing Block 0 Toggle 0 1 No Toggle
Erase Suspend
Erasing Block 1 No Toggle 0 Toggle
Non-Erasing Block Data read as normal
Erase Error
Good Block Address 0 Toggle 1 1 No Toggle
Faulty Block Address 0 Toggle 1 1 Toggle
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M29F102BB
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Figure 4. Dat a Po ll i ng Fl o wc h a rt
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
at VALID ADDRESS
FAIL PASS
AI03598
DQ7
=
DATA
YES
NO
YES
NO
DQ5
= 1
DQ7
=
DATA
YES
NO
Figure 5. Dat a Toggle Flow cha rt
READ DQ6
START
READ DQ6
TWICE
FAIL PASS
AI01370B
DQ6
=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ6
=
TOGGLE
READ
DQ5 & DQ6
Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com­mand. Once the Program/Erase Controller starts
erasing the Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit is set to ’0’ and additional block s to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read.
Alternative Toggle Bit (DQ2). The Alternative Toggle Bit can be used to monitor the Program/ Erase controller during Erase operations. The Al­ternative Toggle Bit is output on DQ2 when the Status Register is read.
During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses within the blocks being erased. Once t he operatio n completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to ad­dresses within blocks not being erased will ou tput the memory cell data as if in Read mode.
After an Erase operation that c auses t he Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the er­ror. The Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Re ad Opera­tions from addresses within blocks that have not erased correctly. The Alternative Togg le Bit does not change if the addressed block has erased cor­rectly.
Page 11
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M29F102BB
Figure 6. AC Testing Input Output Waveform
AI01417
3V
0V
1.5V
Figure 7. AC Te s ting Load Circ uit
AI02979
1.3V
OUT
CL = 30pF
CL includes JIG capacitance
3.3k
1N914
DEVICE UNDER
TEST
Table 9. Capacitance (T
A
= 25 °C, f = 1 MHz)
Note: Sampled only, not 100% tested.
Symbol Parameter Test Condition Min Max Unit
C
IN
Input Capacitance
V
IN
= 0V
6pF
C
OUT
Output Capacitance
V
OUT
= 0V
12 pF
Table 8. AC Measurement Conditions
Load Capacitance (CL)
30pF
Input Rise and Fall Times
10ns Input Pulse Voltages 0 to 3V Input and Output Timing Ref. Voltages 1.5V
Page 12
M29F102BB
12/21
Table 10. DC Characteristics
(T
A
= 0 to 70°C)
Note: 1. Excludi ng the RP i nput.
2. Sampled only, not 100% tested.
3. T
A
= 25°C, VCC = 5V
Symbol Parameter Test Condition Min
Typ
(3)
Max Unit
I
LI
(1)
Input Leakage Current
0V ≤ V
IN
≤ V
CC
±1 µA
I
LR1
RP Leakage Current High
RP
= V
CC
±1 µA
I
LR2
RP Leakage Current Low
RP
= V
SS
–0.2 –10 µA
I
LO
Output Leakage Current
0V ≤ V
OUT
≤ V
CC
±1 µA
I
CC1
Supply Current (Read)
E
= VIL, G = VIH, f = 6MHz
620mA
I
CC2
Supply Current (Standby)
E
= VCC ±0.2V,
RP
= VCC ±0.2V
30 100 µA
I
CC3
(2)
Supply Current (Program/ Erase)
Program/Erase
Controller active
20 mA
V
IL
Input Low Voltage –0.5 0.8 V
V
IH
Input High Voltage 2
V
CC
+0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA
0.45 V
V
OH
Output High Voltage
I
OH
= –100µA VCC –0.4
V
V
ID
Identification Voltage 11.5 12.5 V
I
ID
Identification Current
A9 = V
ID
100 µA
V
LKO
(2)
Program/Erase Lockout Supply Voltage
3.2 4.2 V
Page 13
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M29F102BB
Figure 8. Read Mode AC Waveforms
AI02980
tAVAV
tAVQV tAXQX
tELQX tEHQZ
tGLQV
tGLQX tGHQX
VALID
A0-A15
G
DQ0-DQ15
E
tELQV tEHQX
tGHQZ
VALID
Table 11. Read AC Characteristics
(TA = 0 to 70°C)
Note: 1. This timing refers to a Load Capacitance (CL) of 30pF. If CL is higher, add 1.5ns for eac h extra 10pF.
2. Sampled only, not 100% tested.
Symbol Alt Parameter Test Condition
M29F102BB
Unit
35 45 50 / 55 70
t
AVAV
(1)
t
RC
Address Valid to Next Address Valid
E
= VIL,
G
= V
IL
Min 35 45 50 70 ns
t
AVQV
(1)
t
ACC
Address Valid to Output Valid
E
= VIL,
G
= V
IL
Max 35 45 50 70 ns
t
ELQX
(2)
t
LZ
Chip Enable Low to Output Transition
G
= V
IL
Min 0 0 0 0 ns
t
ELQV
(1)
t
CE
Chip Enable Low to Output Valid
G
= V
IL
Max 35 45 50 70 ns
t
GLQX
(2)
t
OLZ
Output Enable Low to Output Tran sition
E
= V
IL
Min 0 0 0 0 ns
t
GLQV
(1)
t
OE
Output Enable Low to Output Valid
E
= V
IL
Max 20 20 20 30 ns
t
EHQZ
(2)
t
HZ
Chip Enable High to Output Hi-Z
G
= V
IL
Max 15 15 18 20 ns
t
GHQZ
(2)
t
DF
Output Enable High to Output Hi-Z
E
= V
IL
Max 15 15 18 20 ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or Address Transition to Output Tran sition
Min 0 0 0 0 ns
Page 14
M29F102BB
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Figure 9. Write AC Waveforms, Write Enable Control led
AI02119
E
G
W
A0-A15
DQ0-DQ15
VALID
VALID
V
CC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWHtGHWL
Table 12. Write AC Characteristics, Write Enable Controlled
(T
A
= 0 to 70 °C)
Symbol Alt Parameter
M29F102BB
Unit
35 45 50 / 55 70
t
AVAV
t
WC
Address Valid to Next Address Valid Min 35 45 50 70 ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low Min 0000ns
t
WLWH
t
WP
Write Enable Low to Write Enable High Min 35 40 40 45 ns
t
DVWH
t
DS
Input Valid to Write Enable High Min 20 25 25 30 ns
t
WHDX
t
DH
Write Enable High to Input Transition Min 0000ns
t
WHEH
t
CH
Write Enable High to Chip Enable High Min 0000ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low Min 20 20 20 20 ns
t
AVWL
t
AS
Address Valid to Write Enable Low Min 0000ns
t
WLAX
t
AH
Write Enable Low to Address Transition Min 35 40 40 45 ns
t
GHWL
Output Enable High to Write Enable Low Min 0000ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low Min 0000ns
t
VCHEL
t
VCSVCC
High to Chip Enable Low
Min 50 50 50 50 µs
Page 15
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M29F102BB
Table 13. Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70 °C)
Symbol Alt Parameter
M29F102BB
Unit
35 45 50 / 55 70
t
AVAV
t
WC
Address Valid to Next Address Valid Min 35 45 50 70 ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low Min 0000ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High Min 35 40 40 45 ns
t
DVEH
t
DS
Input Valid to Chip Enable High Min 20 25 25 30 ns
t
EHDX
t
DH
Chip Enable High to Input Transition Min 0000ns
t
EHWH
t
WH
Chip Enable High to Write Enable High Min 0000ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low Min 20 20 20 20 ns
t
AVEL
t
AS
Address Valid to Chip Enable Low Min 0000ns
t
ELAX
t
AH
Chip Enable Low to Address Transition Min 35 40 40 45 ns
t
GHEL
Output Enable High Chip Enable Low Min 0000ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low Min 0000ns
t
VCHWL
t
VCSVCC
High to Write Enable Low
Min 50 50 50 50 µs
Figure 10. Write AC Waveforms, Chip Enable Controlled
AI02120
E
G
W
A0-A15
DQ0-DQ15
VALID
VALID
V
CC
tVCHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
tAVAV
tDVEH
tELEHtGHEL
Page 16
M29F102BB
16/21
Table 14. Reset/Block Temporary Unprotect AC Characteristics
(T
A
= 0 to 70°C)
Note: 1. Sampled only, not 100% tested.
Symbol Alt Parameter
M29F102BB
Unit
50 70 90
t
PHWL
(1)
t
PHEL
t
PHGL
(1)
t
RH
RP High to Write Enable Low, Chip Enable Low, Output Enable Low
Min 50 50 50 ns
t
PLPX
t
RP
RP Pulse Width Min 500 500 500 ns
t
PLYH
(1)
t
READY
RP Low to Read Mode Max 10 10 10 µs
t
PHPHH
(1)
t
VIDR
RP Rise Time to V
ID
Min 500 500 500 ns
Figure 11. Reset/Block Temporary Unprotect AC Waveforms
AI02943
W,
RP
tPLPX
tPHWL, tPHEL, tPHGL
tPLYH
tPHPHH
E, G
Page 17
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M29F102BB
Table 15. Ordering Information Scheme
Note: The last two characters o f the ordering code m ay be replaced by a letter code for preprogram m ed
parts, otherwise devices are shipped from the factory with the memory content bits erased to ‘1’.
For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this de­vice, please contact the ST Sales Office nearest to you.
Example: M29F102BB 50 N 1 T
Device Type
M29
Operating Voltage
F = V
CC
= 5V ± 10%
Device Function
102BB = 1 Mbit (64Kb x16), Bottom Boot Block
Speed
35 = 35ns 45 = 45 ns 50 = 50 ns 55 = 55 ns 70 = 70 ns
Package
K = PLCC44 N = TSOP40:10 x 14mm
Temperature Range
1 = 0 to 70 °C
Option
T = Tape & Reel Packing
Page 18
M29F102BB
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Table 16. Revision History
Date Revision Details
July 1999 First Issue
07/28/00
New document template Status Register bit DQ5 clarification Data Polling Flowchart diagram change (Figure 4) Data Toggle Flowchart diagram change (Figure 5)
Page 19
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M29F102BB
Figure 12. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Outline
Drawing is not to scale.
PLCC
D
Ne E1 E
1 N
D1
Nd
CP
B
D2/E2
e
B1
A1
A
R
0.51 (.020)
1.14 (.045)
F
A2
Table 17. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symbol
mm inches
Typ Min Max Typ Min Max
A 4.20 4.70 0.1654 0.1850 A1 2.29 3.04 0.0902 0.1197 A2 0.51 0 .0201
B 0.33 0.53 0.0130 0.0209 B1 0.66 0.81 0.0260 0.0319
D 17.40 17.65 0.6850 0.6949 D1 16.51 16.66 0.6500 0.6559 D2 14.99 16.00 0.5902 0.6299
E 17.40 17.65 0.6850 0.6949 E1 16.51 16.6 6 0.6500 0.6559 E2 14.99 16.0 0 0.5902 0.6299
e 1.27 0.0500
F 0.00 0.25 0.0000 0.0098 R 0.89 0.0350 – N44 44
Nd 11 11 Ne 11 11
CP 0.10 0.0039
Page 20
M29F102BB
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Figure 13. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 14mm, Package Outline
Drawing is not to scale.
TSOP-a
D1
E
1 N
CP
B
e
A2
A
N/2
D
DIE
C
LA1 α
Table 18. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 14mm, Package Mechanical Data
Symbol
mm in ches
Typ Min Max Typ Min Max
A 1.20 0.0472
A1 0.05 0.15 0.0020 0.0059 A2 0.95 1.05 0.0374 0.0413
B 0.17 0.27 0.0067 0 .0106 C 0.10 0.21 0.0039 0.0083 D 13.80 14.20 0.5433 0 .5591
D1 12.30 12.50 0.4843 0.4921
E 9.90 10.1 0 0.3898 0.3976
e 0.50 0.0197
L 0.50 0.70 0.0197 0.0276
α
N40 40
CP 0.10 0.0039
Page 21
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M29F102BB
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