Datasheet M28256-W, M28256 Datasheet (SGS Thomson Microelectronics)

M28256

256 Kbit (32Kb x8) Parallel EEPROM

with Software Data Protection

PRELIMINARY DATA

January 1999 1/21

Thisis preliminaryinformationon a new product now in developmentor undergoingevaluation.Detail s aresubject to change without notice.

AI01885

15

A0-A14

W

DQ0-DQ7

V

CC

M28256

G

E

V

SS

8

Figure1. LogicDiagram

28

1

PDIP28 (BS) PLCC32 (KA)

A0-A14 Address Input
DQ0-DQ7 Data Input / Output
W Write Enable
E Chip Enable
G Output Enable
V

CC

Supply Voltage

V

SS

Ground

Table1. Signal Names

FASTACCESSTIME:
– 90ns at 5V
– 120ns at 3V
SINGLESUPPLYVOLTAGE:
–5V±10%for M28256
– 2.7V to 3.6Vfor M28256-xxW
LOWPOWER CONSUMPTION
FASTWRITECYCLE:
– 64 Bytes Page Write Operation
– Byte or Page WriteCycle
ENHANCEDEND of WRITEDETECTION:
– Data Polling
– ToggleBit
STATUSREGISTER
HIGHRELIABILITYDOUBLEPOLYSILICON,

CMOSTECHNOLOGY:
– Endurance >100,000Erase/WriteCycles
– Data Retention>10 Years
JEDECAPPROVEDBYTEWIDE PIN OUT
ADDRESS and DATALATCHEDON-CHIP
SOFTWAREDATAPROTECTION

DESCRIPTION

TheM28256and M28256-Ware 32Kx8lowpower
ParallelEEPROMfabricatedwithSTMicroelectron­ics proprietary double polysilicon CMOS technol­ogy.

TSOP28 (NS)

8 x13.4mm

28

1

SO28 (MS)

300 mils

A1
A0

DQ0

A7

A4
A3
A2

A6
A5

A13

A10

A8
A9

DQ7

W

A11
G

E

DQ5DQ1

DQ2

DQ3V

SS

DQ4

DQ6

A12

A14 V

CC

AI01886

M28256

8

1
2
3
4
5
6
7

9
10
11
12
13
14

16
15

28
27
26
25
24
23
22
21
20
19
18
17

Figure2A. DIPPin Connections

AI01887

A13

A8

A10

DQ4

17

A0

NC

DQ0

DQ1

DQ2DUDQ3

A6

A3
A2
A1

A5
A4

9

W

A9

1

A14

A11

DQ6

A7

DQ7

32

DU

V

CC

M28256

A12

NC

DQ5

G

E

25

V

SS

Figure2B. LCC Pin Connections

Warning:

NC = Not Connected, DU = Don’t Use.

A1

A0

DQ0

A5

A2

A4
A3

A9

A11

DQ7

A8

G

E

DQ5

DQ1

DQ2

DQ3

DQ4

DQ6

A13

W

A12

A6

A14

V

CC

A7

AI01889

M28256

28
1

22

78

14

15

21

V

SS

A10

Figure2D. TSOPPin Connections

DQ0
DQ1

A3

A0

A2
A1

A10
E

A13

DQ7

G

DQ5

V

CC

DQ4

A9

W

A4

A14

A7

AI01888

M28256

8

2
3
4
5
6
7

9
10
11
12
13
14

22
21
20
19
18
17
16
15

DQ2

V

SS

A6
A5

DQ6

28
27
26
25
24
23 A11

DQ3

1

A12

A8

Figure 2C. SOPin Connections

2/21

M28256

Symbol Parameter Value Unit

T

A

Ambient Operating Temperature

(2)

–40to85 °C

T

STG

Storage TemperatureRange – 65 to 150

°

C

V

CC

Supply Voltage – 0.3 to 6.5 V

V

IO

Input/Output Voltage – 0.3 to VCC+0.6 V

V

I

Input Voltage – 0.3 to 6.5 V

V

ESD

Electrostatic Discharge Voltage (Human Body model)

(3)

4000 V

Notes:

1. Except for therating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied.Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.Refer also to the STMicroelectronicsSUREProgram and other
relevant quality documents.

2. Depends on range.

3. 100pF through 1500Ω; MIL-STD-883C, 3015.7

Table2. Absolute Maximum Ratings

(1)

AI01697

ADDRESS

LATCH

A6-A14

(Page Address)

X DECODE

CONTROL LOGIC

256K ARRAY

ADDRESS

LATCH

A0-A5

Y DECODE

VPPGEN RESET

SENSE AND DATA LATCH

I/O BUFFERS

EGW

PAGE

LOAD
TIMER STATUS
TOGGLE BIT
DATA POLLING

DQ0-DQ7

Figure3. Block Diagram

3/21

M28256

Mode E G W DQ0 - DQ7

Read V

IL

V

IL

V

IH

Data Out

Write V

IL

V

IH

V

IL

Data In

Standby / Write Inhibit V

IH

X X Hi-Z

Write Inhibit X X V

IH

Data Out or Hi-Z

Write Inhibit X V

IL

X Data Out or Hi-Z

Output Disable X V

IH

X Hi-Z

Notes: 1. X = VIHor V

IL.

Table3. Operating Modes

(1)

The devices offer fast access timewith low power
dissipationand requires a 5V or 3Vpower supply.

The circuit has been designed to offer a flexible
microcontroller interface featuring both hardware
and software handshaking with Data Polling and
Toggle Bit and access to a status register. The
devicessupport a 64 byte page write operation.A
Software Data Protection (SDP) is also possible
using the standardJEDECalgorithm.

PIN DESCRIPTION
Addresses (A0-A14).

The address inputs select
an 8-bit memory location during a read or write
operation.

Chip Enable (E).

The chip enable input must be
lowto enableall read/writeoperations.When Chip
Enableis high, power consumptionis reduced.

OutputEnable (G).

The Output Enable input con­trols the dataoutput buffers and is usedto initiate
readoperations.

DataIn/ Out(DQ0-DQ7).

Datais writtento orread

fromthe memorythrough the I/O pins.

WriteEnable(W).

TheWriteEnable inputcontrols

the writingof datato thememory.

OPERATIONS
WriteProtection

In orderto preventdata corruptionand inadvertent
writeoperations;an internalV

CC

comparatorinhib-

its Write operationsif V

CC

is below VWI (see Table
7andTable9).Accesstothememoryinwrite mode
is allowed after a power-upas specifiedin Table7
and Table 9.

Read

Thedevice is accessedlike a staticRAM. WhenE
and G are low with W high, the data addressedis
presented on the I/O pins. The I/O pins are high
impedancewhen either G or E is high.

Write

Writeoperations are initiated when both W and E
are low and G is high.Thedevice supportsboth E
and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurslast and the Data on the risingedge of E or
W which ever occurs first. Once initiated the write
operation is internally timed until completion and
the status of the Data Polling and the Toggle Bit
functions on DQ7 and DQ6 is controlled accord­ingly.

Page Write

Page write allows up to 64 bytes within the same
page to be consecutivelylatched into the memory
prior to initiating a programming cycle. All bytes
must be located in a single page address, that is
A14-A6 mustbe the same forall bytes;if not,the
Page Write instruction is not executed. The page
writecan be initiatedby any byte write operation.

A page write is composed of successive Write
instructions which have to be sequenced with a
specific period of time between two consecutive
Write instructions, period of time which has to be
smaller than the t

WHWH

value (see Table 12 and

Table13).
If thisperiod of time exceedsthet

WHWH

value, the
internalprogrammingcycle will start.Onceinitiated
thewrite operationis internallytimed until comple­tion and the status of the Data Polling and the
ToggleBit functionson DQ7and DQ6 is controlled
accordingly.

DESCRIPTION

(Cont’d)

4/21

M28256

StatusRegister

Thedevicesprovide severalWriteoperationstatus
flags that can beused to minimize the application
writetime. These signals are available on the I/O
portbits during programming cycleonly.

Data Polling bit (DQ7).

During the internal write
cycle,any attemptto read the last bytewrittenwill
produceon DQ7 the complementary value of the
previously latched bit. Once the write cycle is fin­ished the true logic value appears on DQ7 in the
readcycle.

Toggle bit (DQ6). The devices offer another way
for determining when the internal write cycle is
completed.During theinternal Erase/Write cycle,
DQ6 will toggle from ”0” to ”1” and ”1” to ”0” (the
first read value is ”0”) on subsequent attempts to
read any byte of the memory. When the internal
cycle is completed the toggling will stop and the
data read on DQ7-DQ0is the addressed memory
byte.The deviceisnow accessiblefor a newRead
or Write operation.

PageLoadTimerStatusbit(DQ5).DuringaPage
Writeinstruction,the devicesexpectto receivethe
stream of data with a minimum period of time
between each data byte. This period of time
(t

WHWH

) isdefined by theon-chip Page Loadtimer
whichrunning/overflowstatusis availableonDQ5.
DQ5 Low indicates that the timeris running, DQ5
Highindicatesthe time-outafter which the internal
writecycle will start.

Software Data Protection

The devices offer a software controlled write pro­tectionfacility thatallowstheuser to inhibitallwrite
modesto the device.This can be usefulin protect­ing the memory from inadvertentwrite cycles that
may occur due to uncontrolledbus conditions.

Thedevicesare shippedas standardinthe”unpro­tected” state meaning thatthe memory contents
canbe changedas required by the user. After the
Software Data Protection enable algorithm is is­sued, the device enters the ”Protect Mode” of
operationwhere no further write commands have
anyeffect on the memorycontents.

The devices remain in this mode until a valid
SoftwareData Protection(SDP) disablesequence
is received whereby the device reverts to its ”un­protected”state. TheSoftware Data Protection is
fully non-volatile and is not changed by power
on/off sequences. To enable the Software Data
Protection (SDP) the device requires the user to
write(with a PageWrite addressing three specific
databytestothreespecificmemorylocations,each
locationin a different page) as per Figure 6. Simi­larly to disable the Software Data Protection the
userhas to write specific data bytes intosix differ­ent locations as per Figure 5 (with a Page Write
adressingdifferent bytes in differentpages).

Thiscomplexseriesensuresthattheuserwillnever
enable or disable the Software Data Protection
accidentally.

To write into the devices when SDP is set, the
sequence shown in Figure 6 must be used. This
sequence provides an unlock key to enable the
writeaction, and at the same time SDP continues
to be set.

Anextension to this is whereSDPis required to be
set,and data is to be written.

Using the same sequenceas above, the datacan
be written and SDP is set at the same time, giving
boththese actions in thesame Write cycle (t

WC

).

DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0

DP TB PLTS X X X X X

DP = Data Polling
TB = ToggleBit
PLTS = Page Load Timer Status

Figure4. StatusBit Assignment

5/21

M28256

AI01698B

WRITE AAh in

Address 5555h

WRITE 55h in

Address 2AAAh

WRITE A0h in

Address 5555h

SDP is set

WRITE AAh in

Address 5555h

WRITE 55h in

Address 2AAAh

WRITE A0h in

Address 5555h

WRITE Data

to
be Written in
any Address

SDP ENABLE ALGORITHM

Page
Write

Instruction

Page
Write

Instruction

WRITE
is enabled

SDP

Set

SDP

not Set

Write

in Memory

Write

Data

+

SDP Set

after tWC

Figure5. SoftwareData Protection Enable Algorithmand Memory Write

AI01699B

WRITE AAh in
Address 5555h

WRITE 55h in

Address 2AAAh

WRITE 80h in

Address 5555h

Unprotected

State

after

tWC (Write Cycle time)

WRITE AAh in
Address 5555h

WRITE 55h in

Address 2AAAh

WRITE 20h in

Address 5555h

Page
Write

Instruction

Figure6. SoftwareData Protection Disable Algorithm

6/21

M28256

Input Rise and FallTimes ≤ 20ns
Input Pulse Voltages(M28256) 0.4V to 2.4V
Input Pulse Voltages(M28256-W) 0V toV

CC

–0.3V
Input and Output Timing Ref. Voltages(M28256) 0.8V to 2.0V
Input and Output Timing Ref. Voltages(M28256-W) 0.5 V

CC

Table4. AC MeasurementConditions

AI02101B

4.5V to 5.5V Operating Voltage

2.7V to 3.6V Operating Voltage

VCC– 0.3V

0V

0.5 V

CC

2.4V

0.4V

2.0V

0.8V

Figure7. AC TestingInput Output Waveforms

AI02102B

OUT

CL= 100pF

CLincludes JIG capacitance

I

OL

DEVICE
UNDER

TEST

I

OH

Figure8. AC TestingEquivalent LoadCircuit

Symbol Parameter Test Condition Min Max Unit

C

IN

Input Capacitance VIN=0V 6 pF

C

OUT

Output Capacitance V

OUT

=0V 12 pF

Note:

1. Sampled only, not 100% tested.

Table5. Capacitance

(1)

(TA=25°C, f = 1 MHz )

Symbol Parameter TestCondition Min Max Unit

I

LI

Input Leakage Current 0V ≤ VIN≤ V

CC

10 µA

I

LO

Output Leakage Current 0V ≤ VIN≤ V

CC

10 µA

I

CC

(1)

Supply Current (TTLinputs) E = VIL,G=VIL,f=5MHz 30 mA
Supply Current (CMOS inputs) E = V

IL

,G=VIL,f=5MHz 25 mA

I

CC1

(1)

Supply Current (Standby) TTL E = V

IH

1mA

I

CC2

(1)

Supply Current (Standby) CMOS E > VCC–0.3V 100 µA

V

IL

Input Low Voltage – 0.3 0.8 V

V

IH

Input High Voltage 2 VCC+ 0.5 V

V

OL

Output Low Voltage IOL= 2.1 mA 0.4 V

V

OH

Output High Voltage IOH= –400 µA 2.4

Note: 1. All I/O’s open circuit.

Table6. Read Mode DC Characteristicsfor M28256

(T

A

=0 to 70°C or –40 to85°C;VCC= 4.5V to 5.5V)

7/21

M28256

Symbol Parameter Min Max Unit

t

PUR

Time Delay to Read Operation 1 µs

t

PUW

Time Delay to Write Operation (once VCC≥ VWI)5ms

V

WI

Write Inhibit Threshold 3.0 4.2 V

Note:

1. Sampled only, not 100% tested.

Table7. Power Up Timingfor M28256

(1)

(TA= 0 to 70°C or –40 to85°C;VCC=4.5V to 5.5V)

Symbol Parameter TestCondition Min Max Unit

I

LI

Input Leakage Current 0V ≤ VIN≤ V

CC

10 µA

I

LO

Output Leakage Current 0V ≤ VIN≤ V

CC

10 µA

I

CC

(1)

Supply Current(CMOS inputs)

E=V

IL

,G=VIL, f = 5 MHz, VCC= 3.3V 15 mA

E=V

IL

,G=VIL, f = 5 MHz, VCC= 3.6V 15 mA

I

CC2

(1)

Supply Current(Standby) CMOS E> VCC–0.3V 20

µ

A

V

IL

Input Low Voltage – 0.3 0.6 V

V

IH

Input High Voltage 2 VCC+ 0.5 V

V

OL

Output Low Voltage IOL= 2.1 mA 0.2V

CC

V

V

OH

Output High Voltage IOH= –400µA 0.8 V

CC

V

Note:

1. All I/O’sopencircuit.

Table8. Read Mode DC Characteristicsfor M28256-W

(T

A

=0 to 70°C or –40 to85°C;VCC= 2.7V to 3.6V)

Symbol Parameter Min Max Unit

t

PUR

Time Delay to Read Operation 1 µs

t

PUW

Time Delay to Write Operation (once V

CC

≥

V

WI

)10ms

V

WI

Write Inhibit Threshold 1.5 2.5 V

Note: 1. Sampled only,not 100% tested.

Table9. Power Up Timingfor M28256-W

(1)

(TA= 0 to 70°C or –40 to 85°C; VCC=2.7V to 3.6V)

8/21

M28256

Symbol Alt Parameter Test Condition

M28256

Unit

-90 -12 -15 -20

min max min max min max min max

t

AVQV

t

ACC

Address Validto
Output Valid

E=V

IL

,G=V

IL

90 120 150 200 ns

t

ELQV

t

CE

Chip Enable Low to
Output Valid

G=V

IL

90 120 150 200 ns

t

GLQV

t

OE

Output Enable Low
to Output Valid

E=V

IL

40 45 50 50 ns

t

EHQZ

(1)

t

DF

Chip Enable High to
Output Hi-Z

G=V

IL

0 40 0 45 0 50 0 50 ns

t

GHQZ

(1)

t

DF

Output Enable High
to Output Hi-Z

E=V

IL

0 40 0 45 0 50 0 50 ns

t

AXQX

t

OH

Address Transition
to Output Transition

E=V

IL

,G=VIL0000ns

Note:

1. Output Hi-Z is defined as the point atwhich data is no longer driven.

Table10. ReadMode AC Characteristics

(T

A

=0 to 70°C or –40 to85°C;VCC= 4.5V to 5.5V)

Symbol Alt Parameter Test Condition

M28256-W

Unit

-12 -15 -20 -25

min max min max min max min max

t

AVQV

t

ACC

Address Validto
Output Valid

E=V

IL

,G=V

IL

120 150 200 250 ns

t

ELQV

t

CE

Chip Enable Low to
Output Valid

G=V

IL

120 150 200 250 ns

t

GLQV

t

OE

Output Enable Low
to Output Valid

E=V

IL

45 70 80 100 ns

t

EHQZ

(1)

t

DF

Chip Enable High to
Output Hi-Z

G=V

IL

0 45 0 50 0 55 0 60 ns

t

GHQZ

(1)

t

DF

Output Enable High
to Output Hi-Z

E=V

IL

0 45 0 50 0 55 0 60 ns

t

AXQX

t

OH

Address Transition
to Output Transition

E=V

IL

,G=VIL0000ns

Note: 1. Output Hi-Z is defined as the point at which data is no longer driven.

Table11. Read Mode AC Characteristics

(T

A

=0 to 70°C or –40 to85°C;VCC= 2.7V to 3.6V)

9/21

M28256

Symbol Alt Parameter TestCondition

M28256

Unit

Min Max

t

AVWL

t

AS

Address Valid to Write Enable Low E = VIL,G=V

IH

0ns

t

AVEL

t

AS

Address Valid to Chip Enable Low G = VIH,W=V

IL

0ns

t

ELWL

t

CES

Chip Enable Low to Write Enable Low G = V

IH

0ns

t

GHWL

t

OES

Output Enable High to Write Enable
Low

E=V

IL

0ns

t

GHEL

t

OES

Output Enable High to Chip Enable Low W = V

IL

0ns

t

WLEL

t

WES

Write Enable Low to Chip Enable Low G = V

IH

0ns

t

WLAX

t

AH

Write Enable Low to Address Transition 50 ns

t

ELAX

t

AH

Chip Enable Low to Address Transition 50 ns

t

WLDV

t

DV

Write Enable Low to Input Valid E = VIL,G=V

IH

1

µ

s

t

ELDV

t

DV

Chip Enable Low to Input Valid G = VIH,W=V

IL

1 µs

t

ELEH

t

WP

Chip Enable Low to Chip Enable High 50 ns

t

WHEH

t

CEH

Write Enable High to Chip Enable High 0 ns

t

WHGL

t

OEH

Write Enable High to Output Enable
Low

0ns

t

EHGL

t

OEH

Chip Enable High to Output Enable Low 0 ns

t

EHWH

t

WEH

Chip Enable High to Write Enable High 0 ns

t

WHDX

t

DH

Write Enable High to Input Transition 0 ns

t

EHDX

t

DH

Chip Enable High to Input Transition 0 ns

t

WHWL

t

WPH

Write Enable High to Write Enable Low 100 ns

t

WLWH

t

WP

Write Enable Low to Write Enable High 50 ns

t

WHWH

t

BLC

Byte Load Repeat Cycle Time 0.15 150 µs

t

WHRH

t

WC

Write Cycle Time 5 ms

t

EL,tWL

E or W Input Filter Pulse Width Note 1 10 ns

t

DVWH

t

DS

Data Validbefore Write Enable High 50 ns

t

DVEH

t

DS

Data Validbefore ChipEnable High 50 ns

Note: 1. Characterized only but not testedin production.

Table12. Write Mode AC Characteristics

(T

A

=0 to 70°C or –40 to85°C;VCC= 4.5V to 5.5V)

10/21

M28256

Symbol Alt Parameter TestCondition

M28256-W

Unit

Min Max

t

AVWL

t

AS

Address Valid to Write Enable Low E = VIL,G=V

IH

0ns

t

AVEL

t

AS

Address Valid to Chip Enable Low G = VIH,W=V

IL

0ns

t

ELWL

t

CES

Chip Enable Low to Write Enable Low G = V

IH

0ns

t

GHWL

t

OES

Output Enable High to Write Enable
Low

E=V

IL

0ns

t

GHEL

t

OES

Output Enable High to Chip Enable Low W = V

IL

0ns

t

WLEL

t

WES

Write Enable Low to Chip Enable Low G = V

IH

0ns

t

WLAX

t

AH

Write Enable Low to Address Transition 70 ns

t

ELAX

t

AH

Chip Enable Low to Address Transition 70 ns

t

WLDV

t

DV

Write Enable Low to Input Valid E = VIL,G=V

IH

1

µ

s

t

ELDV

t

DV

Chip Enable Low to Input Valid G = VIH,W=V

IL

1 µs

t

ELEH

t

WP

Chip Enable Low to Chip Enable High 100 ns

t

WHEH

t

CEH

Write Enable High to Chip Enable High 0 ns

t

WHGL

t

OEH

Write Enable High to Output Enable
Low

0ns

t

EHGL

t

OEH

Chip Enable High to Output Enable Low 0 ns

t

EHWH

t

WEH

Chip Enable High to Write Enable High 0 ns

t

WHDX

t

DH

Write Enable High to Input Transition 0 ns

t

EHDX

t

DH

Chip Enable High to Input Transition 0 ns

t

WHWL

t

WPH

Write Enable High to Write Enable Low 100 ns

t

WLWH

t

WP

Write Enable Low to Write Enable High 100 ns

t

WHWH

t

BLC

Byte Load Repeat Cycle Time 0.2 150 µs

t

WHRH

t

WC

Write Cycle Time 5 ms

t

EL,tWL

E or W Input Filter Pulse Width Note 1 10 ns

t

DVWH

t

DS

Data Validbefore Write Enable High 50 ns

t

DVEH

t

DS

Data Validbefore ChipEnable High 50 ns

Note: 1. Characterized only but not testedin production.

Table13. Write Mode AC Characteristics

(T

A

=0 to 70°C or –40 to85°C;VCC= 2.7V to 3.6V)

11/21

M28256

Note: Write Enable (W) = High.

AI01700

VALID

tAVQV tAXQX

tGLQV tEHQZ

tGHQZ

DATA OUT

A0-A14

E

G

DQ0-DQ7

tELQV

Hi-Z

Figure9. ReadMode AC Waveforms

AI01701

VALID

tAVWL

A0-A14

E

G

DQ0-DQ7

DATA IN

W

tWLAX

tELWL

tGHWL

tWLDV

tWHEH

tWHGLtWLWH

tWHWL

tWHDXtDVWH

Figure10. Write Mode AC Waveforms- WriteEnable Controlled

12/21

M28256

AI01702

VALID

tAVEL

A0-A14

E

G

DQ0-DQ7

DATA IN

W

tELAX

tGHEL

tWLEL

tELDV

tEHGL

tEHDXtDVEH

tELEH

tEHWH

Figure11. WriteMode AC Waveforms- Chip Enable Controlled

AI01703B

A0-A14

E

G

DQ0-DQ7

W

tWHWH

Addr 0

DQ5

Addr 1 Addr 2 Addr n

tWHWH

tWHRH

tWLWH

tWHWL

Byte 0 Byte 1 Byte 2 Byte n

Byte n

Figure12. Page Write Mode AC Waveforms- Write Enable Controlled

13/21

M28256

AI01704

A0-A5

E

G

DQ0-DQ7

W

tWLWH

tDVWH

Byte 0

tWHWL

A6-A14

tWLAX

tWHWH

tWHDX

tAVEL

5555h 2AAAh 5555h

Byte 62 Byte 63AAh 55h A0h

Byte Address

Page Address

Figure13. Software Protected Write Cycle Waveforms

Note: A6 through A14 must specify the same page address duringeach high tolow transition of W (or E) after the software code has been

entered. G must be high only when W and E are both low.

AI01705

A0-A14

E

G

DQ7

W

DQ7 DQ7DQ7 DQ7DQ7

READYLAST WRITE INTERNAL WRITE SEQUENCE

Address of the last byte of the Page Write instruction

Figure14. Data Polling WaveformSequence

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M28256

AI01706

A0-A14

E

G

DQ6

W

READYLAST WRITE

INTERNAL WRITE SEQUENCE

(1)

TOGGLE

DQ6 DQ6

Figure15. ToggleBit Waveform Sequence

Note:

1. First Toggle bit is forced to ’0’.

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M28256

ORDERING INFORMATION SCHEME

Speed

90

(1)

90ns
12 120ns
15 150ns
20 200ns
25

(2)

250ns

Operating Voltage

blank 4.5V to 5.5V

W 2.7V to 3.6V

Package

BS PDIP28

KA PLCC32
MS SO28 300 mils
NS TSOP28

8 x 13.4mm

Temperature Range

1

(3)

0to70°C

6 –40 to 85 °C

Option

T Tape & Reel

Packing

Example: M28256 – 15 W KA 6 T

Notes: 1. Not available for ”W” operating voltage.

2. Available for ”W” operating voltage only.

3. TemperatureRange on requestonly.

Devicesare shipped from the factory with the memory content set at all ”1’s” (FFh).

Fora list ofavailableoptions(Speed, Package,etc...)or for furtherinformationon anyaspect of thisdevice,
pleasecontactthe STMicroelectronics Sales Officenearestto you.

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M28256

PDIP

A2A1A

L

B1 B e1

D

S

E1 E

N

1

C

α

eA
eB

D2

Symb

mm inches

Typ Min Max Typ Min Max

A – 5.08 – 0.200
A1 0.38 – 0.015 –
A2 3.56 4.06 0.140 0.160

B 0.38 0.51 0.015 0.020
B1 1.52 – – 0.060 – –

C 0.20 0.30 0.008 0.012

D 36.83 37.34 1.450 1.470
D2 33.02 – – 1.300 – –

E 15.24 – – 0.600 – –
E1 13.59 13.84 0.535 0.545

e1 2.54 – – 0.100 – –
eA 14.99 – – 0.590 – –
eB 15.24 17.78 0.600 0.700

L 3.18 3.43 0.125 0.135

S 1.78 2.08 0.070 0.082

α 0° 10° 0° 10°

N28 28

Drawing is not to scale.

PDIP28 - 28 pin Plastic DIP, 600 mils width

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M28256

PLCC

D

Ne E1 E

1N

D1

Nd

CP

B

D2/E2

e

B1

A1

A

R

0.51 (.020)

1.14 (.045)

F

A2

Symb

mm inches

Typ Min Max Typ Min Max

A 2.54 3.56 0.100 0.140
A1 1.52 2.41 0.060 0.095
A2 – 0.38 – 0.015

B 0.33 0.53 0.013 0.021
B1 0.66 0.81 0.026 0.032

D 12.32 12.57 0.485 0.495
D1 11.35 11.56 0.447 0.455
D2 9.91 10.92 0.390 0.430

E 14.86 15.11 0.585 0.595
E1 13.89 14.10 0.547 0.555
E2 12.45 13.46 0.490 0.530

e 1.27 – – 0.050 – –

F 0.00 0.25 0.000 0.010
R 0.89 – – 0.035 – –
N32 32

Nd 7 7
Ne 9 9

Drawing is not to scale.

PLCC32- 32 lead Plastic Leaded Chip Carrier,rectangular

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M28256

SO-b

E

N

CP

B

e

A2

D

C

LA1 α

H

A

1

Symb

mm inches

Typ Min Max Typ Min Max

A 2.46 2.64 0.097 0.104

A1 0.13 0.29 0.005 0.011

B 0.35 0.48 0.014 0.019
C 0.23 0.32 0.009 0.013
D 17.81 18.06 0.701 0.711
E 7.42 7.59 0.292 0.299

e 1.27 – – 0.050 – –
H 10.16 10.41 0.400 0.410

L 0.61 1.02 0.024 0.040

α 0° 8° 0° 8°
N28 28

CP 0.10 0.004

Drawing is not to scale.

SO28 - 28 lead Plastic Small Outline, 300 mils body width

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M28256

Symb

mm inches

Typ Min Max Typ Min Max

A 1.25 0.049

A1 0.20 0.008
A2 0.95 1.15 0.037 0.045

B 0.17 0.27 0.007 0.011
C 0.10 0.21 0.004 0.008
D 13.20 13.60 0.520 0.535

D1 11.70 11.90 0.461 0.469

E 7.90 8.10 0.311 0.319

e 0.55 - - 0.022 - -

L 0.50 0.70 0.020 0.028

α

0

°

5

°

0

°

5

°

N28 28

CP 0.10 0.004

Drawing is not to scale.

TSOP28- 28lead Plastic Thin Small Outline, 8 x 13.4mm

TSOP-c

D1

E

78

CP

B

e

A2

A

22

D

DIE

C

LA1 α

21

28

1

20/21

M28256

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
ofuse of such information nor for any infringementofpatents or other rights of third parties whichmay resultfrom its use. No license is granted
by implicationor otherwiseunder any patent or patent rights of STMicroelectronics. Specifications mentioned in thispublicationare subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical componentsin life support devices or systems without express writtenapproval of STMicroelectronics.

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M28256