Datasheet M27W402 Datasheet (SGS Thomson Microelectronics)

Page 1
M27W402
4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM
2.7V to 3.6V SUPPLY VOLTAGEin READ
OPERATION
ACCESS TIME:
–80nsatVCC= 3.0V to 3.6V – 100ns at VCC= 2.7V to 3.6V
PIN COMPATIBLE with M27C4002
LOW POWERCONSUMPTION:
–15µA max Standby Current – 15mA max Active Current at 5MHz
PROGRAMMING TIME 100µs/word
HIGHRELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection – 200mA Latchup Protection Immunity
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h – Device Code: 0044h
40
1
FDIP40W (F) PDIP40 (B)
PLCC44 (K) TSOP40 (N)
Figure 1. Logic Diagram
40
1
10 x 20 mm
DESCRIPTION
The M27W402 is a low voltage 4 Mbit EPROM of­fered in the two range UV (Ultra Violet Erase) and OTP (one time programmable). It is ideally suited for microprocessorsystems requiringlarge data or program storage and is organised as 262,144 by 16 bits.
The M27W402 operates in the read mode with a supply voltageas low as2.7V at –40 to 85°C tem­perature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery re­charges.
The FDIP40W (window ceramic frit-seal package) has a transparent lids which allow the user to ex­pose thechip to ultraviolet light to erase the bit pat­tern. A new pattern can then be written to the device by following the programming procedure.
For applications wherethe content is programmed only one time and erasure is not required, the M27W402 is offered in PDIP40, PLCC44 and TSOP40 (10 x 20 mm) packages.
V
18
A0-A17 Q0-Q15
E
G
V
CC
M27W402
V
SS
PP
16
AI01863
1/15March 2000
Page 2
M27W402
Figure 2A. DIP Connections
V
1
PP
2
Q15
3 4
Q14
5
Q13 Q12
6
Q11
7
Q10
8
Q9
9
Q8
10
V
SS Q7
Q6 Q5 Q4 Q3 Q2
Q0
M27W402
11 12 13 14 15 16 17 18 19
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 2120
AI02672
V
CC
A17E A16 A15 A14 A13 A12 A11 A10 A9 V
SS
A8 A7 A6 A5 A4 A3 A2Q1 A1 A0G
Figure 2B. LCC Connections
Q13
Q14
Q15
CC
NC
VPPE
1
44
A17
V
Q12 Q11 Q10
Q9 A10 Q8
V
SS
12
M27W402
NC
Q6 Q5 Q4
23
G
A0
Q3
Q2
Q1
Q0
NC
A1
A16
A2
A15
A3
A14
34
A4
A13 A12 A11
A9 V
SS
NC A8Q7 A7 A6 A5
AI01865
Figure 2C. TSOP Connections
A9 A10 A11 A12 A6 A13 A14 A15 A16 A17
V
CC
V
PP
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
DQ9 DQ8
1
M27W402
10
(Normal)
11
E
20 21
40
31 30
AI01866
V
SS
A8 A7
A5 A4 A3 A2 A1 A0 G DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 V
SS
Table 1. Signal Names
A0-A17 Address Inputs
Q0-Q15 Data Outputs
E Chip Enable
G Output Enable
V
PP
V
CC
V
SS
NC Not Connected Internally
Program Supply
Supply Voltage
Ground
2/15
Page 3
M27W402
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute MaximumRatings” may
cause permanent damage to the device. These are stress ratings onlyand operation ofthe device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure toAbsolute Maximum Rating condi­tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SUREProgram and otherrelevant qual­ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Output is V
3. Depends on range.
Ambient Operating Temperature Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(3)
–40 to 85 °C
Table 3. Operating Modes
Mode E G A9
Read Output Disable V Program
V Verify V Program Inhibit Standby Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
Pulse V
IL
IH
V
IH
V
IH
V
IL
V
IL
V
IH
IH
V
IL
V
IH
X XV X XVPPData Out X
XX
V
IL
V
ID
V
PP
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q15-Q0
Data Out
Hi-Z
Data In
Hi-Z Hi-Z
Codes
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code Device Code
Note: Outputs Q15-Q8 are set to ’0’.
V
IL
V
IH
00100000 20h 01000100 44h
3/15
Page 4
M27W402
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: Sampled only, not 100% tested.
Input Capacitance Output Capacitance V
(1)
(TA=25°C, f = 1 MHz)
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3k
DEVICE UNDER
TEST
C
L
CL= 30pF for HighSpeed CL= 100pF for Standard CLincludes JIG capacitance
V
=0V
IN
=0V 12 pF
OUT
6pF
OUT
AI01823B
DEVICE OPERATION
The operation modes of theM27W402 are listed in the Operating Modes table. A single power supply is required in the read mode. All inputs are TTL levels exceptfor VPPand 12Von A9 for Electronic Signature.
Read Mode
The M27W402 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable(G) is the outputcontrol and should be used to gate data to the output pins, indepen­dent of device selection. Assuming that the ad-
4/15
dresses are stable, the address access time (t
) is equal to the delay from E to output
AVQV
(t
). Data is availableatthe outputaftera delay
ELQV
of t
from the falling edge of G, assuming that
GLQV
E has been lowand the addresses havebeen sta­ble for at least t
AVQV-tGLQV
.
Standby Mode
The M27W402 has a standby mode which reduc­es the supply current from 15mA to 15µAwith low voltage operation VCC≤ 3.6V, see Read ModeDC Characteristics table for details. The M27W402 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input.
Page 5
M27W402
Table 7. Read Mode DC Characteristics
(1)
(TA= –40to 85°C; VCC= 2.7V to 3.6V; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
I
CC
I
CC1
I
CC2
I V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage –0.6
IL
(2)
Input High Voltage Output Low Voltage
OL
Output High Voltage TTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
I
OUT
0V V
0V V
E=V
E>V
I
V
IN
CC
V
OUT
CC
,G=VIL,
IL
= 0mA, f = 5MHz,
3.6V
V
CC
E=V
IH
– 0.2V,
CC
V
3.6V
CC
V
PP=VCC
I
= 2.1mA
OL
= –400µA
OH
±10 µA ±10 µA
15 mA
1mA
15 µA
10 µA
0.2 V
CC
0.7 V
CCVCC
2.4 V
+ 0.5
0.4 V
V V
Two Line Output Control
Because EPROMs are usually used in larger memory arrays, the product features a 2 line con­trol function whichaccommodates the use of mul­tiple memory connection.
The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control lines, Eshould be decodedand usedas the prima­ry device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system controlbus. This ensures that all deselect­ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.
System Considerations
The power switching characteristics of Advanced CMOS EPROMs requirecareful decoupling of the devices. The supply current, ICC, has three seg­ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the fallingand rising edges of E. Themagnitude of the transient current peaks is dependent on the output capacitive and inductive loading of the de­vice. The associated transient voltage peaks can be suppressed by complying withthe two line out­put control and by properly selected decoupling capacitors.It isrecommended that a 0.1µF ceram­ic capacitor be used on everydevice between V
CC
and VSS. This should be a high frequency capaci­tor of low inherent inductance and should be placed as close to the device as possible. In addi­tion, a 4.7µF bulk electrolytic capacitor should be used between VCCand VSSfor every eight devic­es. The bulk capacitor should be located near the power supply connection point.Thepurpose of the bulk capacitor is to overcome the voltage drop caused bythe inductive effects of PCB traces.
5/15
Page 6
M27W402
Table 8. Read Mode AC Characteristics
(1)
(TA= –40to 85°C; VCC= 2.7V to 3.6V; VPP=VCC)
M27W402
(3)
Symbol Alt Parameter
Test
Condition
VCC= 3.0V to 3.6V VCC= 2.7V to 3.6V VCC= 2.7V to 3.6V
Min Max Min Max Min Max
E=V
G=V
G=V
E=V
G=V
E=V
E=V
G=V
,
IL
IL
IL
IL
IL
IL
,
IL
IL
0 50 0 60 0 70 ns
0 50 0 60 0 70 ns
000ns
t
AVQV
t
ELQV
t
GLQV
(2)
t
EHQZ
(2)
t
GHQZ
t
AXQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Address Valid to
t
ACC
Output Valid Chip Enable Low to
t
CE
Output Valid Output Enable Low
t
OE
to Output Valid Chip Enable High
t
DF
to Output Hi-Z Output EnableHigh
t
DF
to Output Hi-Z Address Transition
t
OH
to Output Transition
-100
80 100 120 ns
80 100 120 ns
50 60 70 ns
-120
(-150/-200)
Unit
Figure 5. Read Mode AC Waveforms
A0-A17
tAVQV
E
G
tELQV
Q0-Q15
VALID
tGLQV
VALID
tAXQX
tEHQZ
tGHQZ
Hi-Z
AI00731B
6/15
Page 7
M27W402
Table 9. Programming Mode DC Characteristics
(1)
(TA=25°C; VCC= 6.25V ± 0.25V; VPP= 12.75V ± 0.25V)
Symbol Parameter Test Condition Min Max Unit
I
LI
I
CC
I
PP
V
IL
V
IH
V
OL
V
OH
V
ID
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Table 10. Programming Mode AC Characteristics
Input Leakage Current
0V V
V
IN
CC
±10 µA Supply Current 50 mA Program Current
E=V
IL
50 mA
Input Low Voltage –0.3 0.8 V
V
Input High Voltage 2
CC
+ 0.5
Output Low Voltage IOL= 2.1mA 0.4 V
I
Output High Voltage TTL
= –400µA
OH
2.4 V
A9 Voltage 11.5 12.5 V
(1)
(TA=25°C; VCC= 6.25V ± 0.25V; VPP= 12.75V ± 0.25V)
Symbol Alt Parameter Test Condition Min Max Unit
t
AVEL
t
QVEL
t
VPHEL
t
VCHEL
t
ELEH
t
EHQX
t
QXGL
t
GLQV
t t
t
VPS
t
VCS
t
t
t
OES
t
Address Validto Chip Enable Low 2 µs
AS
Input Valid to Chip Enable Low 2 µs
DS
VPPHigh to Chip Enable Low VCCHigh to Chip Enable Low Chip Enable Program Pulse Width 95 105 µs
PW
Chip Enable High to Input Transition 2 µs
DH
2 µs 2 µs
Input Transition to Output Enable Low 2 µs Output Enable Low to Output Valid 100 ns
OE
V
t
GHQZ
t
GHAX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
t
Programming
The M27W402 hasbeen designed to be fully com­patible with the M27C4002and hasthe same elec­tronic signature. As a result the M27W402 can be programmed as the M27C4002 on the same pro­gramming equipmentapplying 12.75V onVPPand
6.25V on VCCby the use of the same PRESTO II algorithm. When delivered (andafter each ‘1’s era­sure for UV EPROM), all bits of the M27W402 are in the ’1’ state. Data is introduced by selectively
Output Enable High to Output Hi-Z 0 130 ns
DFP
Output Enable High to Address
t
AH
Transition
though only ’0’s will be programmed, both ’1’s and ’0’scan be present in the dataword. The only way tochange a ‘0’ toa ‘1’ bydie exposureto ultraviolet light (UV EPROM). The M27W402 is in the pro­gramming modewhenVPPinput is at 12.75V, G is at VIHand E is pulsed to VIL. The data to be pro­grammedis applied to16 bitsin parallelto thedata output pins. The levels required for the address and data inputs are TTL. VCCis specified to be
6.25V ± 0.25V.
programming ’0’s into the desired bit locations. Al-
0ns
7/15
Page 8
M27W402
Figure 6. Programming and Verify Modes AC Waveforms
A0-A17
tAVEL
Q0-Q15
V
PP
V
CC
E
G
DATA IN
tQVEL
tVPHEL
tVCHEL
tELEH
Figure 7. Programming Flowchart
VCC= 6.25V, VPP= 12.75V
n=0
E = 100µs Pulse
NO
NO
VERIFY
YES
Last
NO
Addr
YES
CHECK ALL WORDS
1st: VCC=5V
2nd: VCC= 2.7V
++ Addr
YES
++n
=25
FAIL
VALID
DATA OUT
tEHQX
tGLQV
tQXGL
PROGRAM VERIFY
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the whole array to be programmed with a guaranteed margin, in a typical time of 26.5 seconds. Pro­gramming with PRESTO II consists of applying a sequence of 100µs program pulses to each byte until a correct verify occurs (see Figure 7).During programming and verify operation, a MARGIN MODE circuitis automatically activatedin order to guarantee that each cell is programmed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE at VCCmuch higher than 3.6V, provides necessary margin to each programmedcell.
Program Inhibit
Programming of multiple M27W402s in parallel with different datais also easilyaccomplished. Ex­cept for E, all likeinputs including G of the parallel M27W402 may becommon. ATTLlow level pulse applied to a M27W402’s E input, with VPPat
12.75V, will program that M27W402. A high level E input inhibits the other M27W402s from being programmed.
Program Verify
AI00726D
A verify (read) should be performed on the pro­grammed bitsto determine that theywere correct­ly programmed. The verify is accomplished with G at VIL, E at VIH,VPPat 12.75V and VCCat 6.25V.
tGHQZ
tGHAX
AI00730
8/15
Page 9
M27W402
On-Board Programming
The M27W402 can be directly programmed in the application circuit. See the relevant Application Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the reading out of a binary code froman EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically matchthe deviceto beprogrammed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C am­bient temperaturerange that is required when pro­gramming the M27W402. To activate the ES mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the M27W402 with VPP=VCC= 5V. Two identifier bytes maythen besequenced fromthe deviceout­puts bytoggling address lineA0from VILtoVIH. All other address lines must be held at VILduring Electronic Signature mode. Byte 0 (A0 = VIL) rep­resents the manufacturer code and byte 1 (A0 = VIH) the device identifier code. For the STMicroelectronics M27W402,these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0.
Note that the M27W402 and M27C4002 have the same identifier bytes.
ERASUREOPERATION (applies to UV EPROM)
The erasure characteristics of the M27W402 are such that erasure begins when the cells are ex­posed to light with wavelengths shorter than ap­proximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluo­rescent lighting coulderase a typicalM27W402 in about 3years, while it would takeapproximately 1 week to cause erasure when exposed to direct sunlight. If the M27W402 isto be exposed tothese types of lighting conditions forextended periods of time, it is suggested thatopaquelabelsbeput over the M27W402 window to prevent unintentional erasure. The recommended erasureprocedure for the M27W402 is exposureto shortwave ultraviolet light which haswavelength 2537Å. The integrated dose (i.e. UV intensityx exposure time) forerasure should be a minimum of 15 W-sec/cm2. The era­sure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 µW/cm2power rating. The M27W402 should be placed within 2.5cm (1inch) of thelamptubes dur­ing the erasure. Some lamps havea filter on their tubes which should be removed before erasure.
9/15
Page 10
M27W402
Table 11. OrderingInformation Scheme
Example: M27W402 -100 K 6 TR
Device Type
M27
SupplyVoltage
W = 2.7V to 3.6V
Device Function
402 = 4 Mbit (256Kb x16)
Speed
(1,2)
-100
-120 = 120 ns
= 100 ns
Not For New Design
(3)
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP40W
(4)
B = PDIP40 K = PLCC44
N = TSOP40: 10 x20 mm
(4)
Temperature Range
6=–40to85°C
Options
TR = Tape& Reel Packing
Note: 1. High Speed, seeAC Characteristics section for further information.
2. This speed also guarantees 80ns access time at V
3. These speeds are replaced by the 120ns.
4. Packages option available on request. Please contact STMicroelectronics local Sales Office.
= 3.0V to3.6V.
CC
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de­vice, please contactthe STMicroelectronics Sales Office nearest to you.
Table 12. Revision History
Date Revision Details
July 1999 First Issue
FDIP42W Package Dimension, L Max added (Table 13)
03/15/00
10/15
TSOP40 Package Dimension changed (Table 16) 0to70°C Temperature Range deleted Programming Time changed
Page 11
M27W402
Table 13. FDIP40W - 40 pin Ceramic Frit-seal DIP with window, Package Mechanical Data
Symb
A 5.72 0.225 A1 0.51 1.40 0.020 0.055 A2 3.91 4.57 0.154 0.180 A3 3.89 4.50 0.153 0.177
B 0.41 0.56 0.016 0.022 B1 1.45 0.057
C 0.23 0.30 0.009 0.012 D 51.79 52.60 2.039 2.071
D2 48.26 1.900
E 15.24 0.600 – E1 13.06 13.36 0.514 0.526
e 2.54 0.100 – eA 14.99 0.590 – eB 16.18 18.03 0.637 0.710
L 3.18 4.10 0.125 0.161
S 1.52 2.49 0.060 0.098
7.62 0.300
α 4° 11° 4° 11°
N40 40
Typ Min Max Typ Min Max
mm inches
Figure 8. FDIP40W - 40 pin Ceramic Frit-seal DIP with window, Package Outline
A2
B1 B e
A3A1A
L
α
C
eA
D2
eB
D
S
N
1
Drawing is notto scale.
E1 E
FDIPW-a
11/15
Page 12
M27W402
Table 14. PDIP40 - 40 pin Plastic DIP, 600 mils width, Package Mechanical Data
Symb
Typ Min Max Typ Min Max
A 4.45 0.175 – A1 0.64 0.38 0.025 0.015 – A2 3.56 3.91 0.140 0.154
B 0.38 0.53 0.015 0.021 B1 1.14 1.78 0.045 0.070
C 0.20 0.31 0.008 0.012
D 51.78 52.58 2.039 2.070
D2 48.26 1.900
E 14.80 16.26 0.583 0.640 E1 13.46 13.99 0.530 0.551 e1 2.54 0.100 – eA 15.24 0.600 – eB 15.24 17.78 0.600 0.700
L 3.05 3.81 0.120 0.150
S 1.52 2.29 0.060 0.090
α 0° 15° 0° 15°
mm inches
N40 40
Figure 9. PDIP40 - 40 lead PlasticDIP, 600 mils width, Package Outline
A2A1A
L
B1 B e1
D2
α
C
eA
eB
D
S
N
E1 E
1
PDIP
Drawing is notto scale.
12/15
Page 13
M27W402
Table 15. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symb
Typ Min Max Typ Min Max
A 4.20 4.70 0.165 0.185 A1 2.29 3.04 0.090 0.120 A2 0.51 0.020
B 0.33 0.53 0.013 0.021 B1 0.66 0.81 0.026 0.032
D 17.40 17.65 0.685 0.695
D1 16.51 16.66 0.650 0.656 D2 14.99 16.00 0.590 0.630
E 17.40 17.65 0.685 0.695 E1 16.51 16.66 0.650 0.656 E2 14.99 16.00 0.590 0.630
e 1.27 0.050
F 0.00 0.25 0.000 0.010
R 0.89 0.035
N44 44
CP 0.10 0.004
mm inches
Figure 10. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Outline
D
D1
1N
Ne E1 E
F
D2/E2
0.51 (.020)
1.14 (.045)
Nd
R
PLCC
Drawing is notto scale.
A1
A2
B1
e
B
A
CP
13/15
Page 14
M27W402
Table 16. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20 mm, Package Mechanical Data
mm inch
Symbol Typ Min Max Typ Min Max
A 1.200 0.0472 A1 0.050 0.150 0.0020 0.0059 A2 0.950 1.050 0.0374 0.0413
B 0.170 0.270 0.0067 0.0106
C 0.100 0.210 0.0039 0.0083 D 19.800 20.200 0.7795 0.7953
D1 18.300 18.500 0.7205 0.7283
e 0.500 0.0197
E 9.900 10.100 0.3898 0.3976
L 0.500 0.700 0.0197 0.0276
α 0° 5° 0° 5°
CP 0.100 0.0039
N32 1.3
Figure 11. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20 mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is notto scale.
LA1 α
14/15
Page 15
M27W402
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use ofsuch information norfor any infringement ofpatents orother rightsof third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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