The M27W201 is a low voltage 2 Mbit EPROM offered in the two range UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organised as 262,144 by 8
bits.
The M27W201 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C temperature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery recharges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bitpattern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W201 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
A0-A17
V
18
P
E
G
V
CC
M27W201
V
SS
PP
8
Q0-Q7
AI01359
1/15April 2000
Page 2
M27W201
Figure 2A. DIP Connections
V
1
PP
2
A15
3
A12
4
A7
5
A6
6
A5
7
A4
8
A3
A2
A1
A0
Q0
Q2
SS
M27W201
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
AI02675
V
CC
PA16
A17
A14
A13
A8
A9
A11
G
A10
E
Q7
Q6
Q5Q1
Q4
Q3V
Figure 2B. LCC Connections
A16
A7
A6
A5
A4
A3
A2
A1
A0
Q0
A12
9
Q1
VPPV
A15
1
32
M27W201
17
Q2
Q3
SS
V
Q4
CC
P
Q5
A17
25
Q6
A14
A13
A8
A9
A11
G
A10
E
Q7
AI01360
Figure 2C. TSOP Connections
A11G
A9
A8
A13
A14
A17
V
CC
V
PP
A16
A15
A12
A7
A6
A5
A4A3
1
P
M27W201
8
(Normal)
9
1617
32
25
24
AI01361
A10
E
Q7
Q6
Q5
Q4
Q3
V
SS
Q2
Q1
Q0
A0
A1
A2
Table 1. Signal Names
A0-A17Address Inputs
Q0-Q7Data Outputs
EChip Enable
GOutput Enable
PProgram
V
PP
V
CC
V
SS
Program Supply
Supply Voltage
Ground
2/15
Page 3
M27W201
Table 2. Absolute Maximum Ratings
(1)
SymbolParameterValueUnit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Referalso to the STMicroelectronics SURE Program andother relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Outputis V
3. Depends on range.
Ambient Operating Temperature
Temperature Under Bias–50 to 125°C
Storage Temperature–65 to 150°C
Input or Output Voltage (except A9)–2 to 7V
Supply Voltage–2 to 7V
A9 Voltage–2 to 13.5V
Program Supply Voltage–2 to 14V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(3)
–40 to 125°C
Table 3. Operating Modes
ModeEGPA9
Read
Output DisableV
Program
VerifyV
Program Inhibit
Standby
Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
V
IL
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
XX
XXV
VILPulse
V
IH
X
XVPPData Out
XXX
XXX
V
IL
V
IH
V
ID
V
PP
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q7-Q0
Data Out
Hi-Z
Data In
Hi-Z
Hi-Z
Codes
Table 4. Electronic Signature
IdentifierA0Q7Q6Q5Q4Q3Q2Q1Q0Hex Data
Manufacturer’s Code
Device Code
V
IL
V
IH
00100000 20h
01100001 61h
3/15
Page 4
M27W201
Table 5. AC Measurement Conditions
High SpeedStandard
Input Rise and Fall Times≤ 10ns≤ 20ns
Input Pulse Voltages0 to 3V0.4V to 2.4V
Input and Output Timing Ref. Voltages1.5V0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
SymbolParameterTest ConditionMinMaxUnit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
(1)
(TA=25°C, f = 1 MHz)
Input Capacitance
Output Capacitance
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
DEVICE
UNDER
TEST
CL= 30pFfor High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
V
=0V
IN
V
=0V
OUT
1N914
3.3kΩ
C
L
6pF
12pF
OUT
AI01823B
DEVICE OPERATION
The operating modes of the M27W201 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for VPPand 12V on A9 for Electronic
Signature.
Read Mode
The M27W201 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable(G) is the output control and should
be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time
4/15
(t
) is equal to the delay from E to output
AVQV
(t
). Data is available attheoutputafteradelay
ELQV
of t
from the falling edge of G, assuming that
GLQV
E has been low and the addresses have been stable for at least t
AVQV-tGLQV
.
Standby Mode
The M27W201 has a standby mode which reduces the supply current from 15mA to 15µA with low
voltage operation VCC≤ 3.6V, see Read ModeDC
Characteristics table for details.The M27W201 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
Page 5
M27W201
Table 7. Read Mode DC Characteristics
(1)
(TA= –40 to 85 °C; VCC= 2.7V to 3.6V; VPP=VCC)
SymbolParameterTest ConditionMinMaxUnit
I
I
I
CC
I
CC
I
CC
I
V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
1
Supply Current (Standby) TTL
2
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage–0.6
IL
(2)
Input High Voltage
Output Low Voltage
OL
Output High VoltageTTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
I
OUT
0V ≤ V
0V ≤ V
E=V
E>V
I
≤ V
IN
CC
≤ V
OUT
IL
= 0mA, f = 5MHz
V
CC
E=V
CC
V
CC
V
PP=VCC
I
= 2.1mA
OL
= –400µA
OH
CC
,G=VIL,
≤ 3.6V
IH
– 0.2V
≤ 3.6V
±10µA
±10µA
15mA
1mA
15µA
10µA
0.2 V
CC
0.7 V
CCVCC
2.4V
+ 0.5
0.4V
V
V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, Eshould be decoded and used as theprimary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system controlbus. This ensures that all deselected memory devices are intheir low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three segments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising ed ges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between V
CC
and VSS. This should be a high frequency capacitor of low inherent inductance and should be
placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be
used between VCCand VSSfor every eight devices. The bulk capacitor should be located near the
power supply connection point. The purposeofthe
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
5/15
Page 6
M27W201
Table 8. Read Mode AC Characteristics
(1)
(TA= –40 to 85 °C; VCC= 2.7V to 3.6V; VPP=VCC)
M27W201
(3)
SymbolAltParameter
Test
Condition
V
= 3.0V to 3.6V VCC= 2.7V to 3.6V VCC= 2.7V to 3.6V
CC
MinMaxMinMaxMinMax
E=V
G=V
G=V
E=V
G=V
E=V
E=V
G=V
,
IL
IL
IL
IL
IL
IL
,
IL
IL
040050060ns
040050060ns
000ns
t
AVQVtACC
t
ELQVtCE
t
GLQVtOE
(2)
t
EHQZ
(2)
t
GHQZ
t
AXQXtOH
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
t
t
t
VPS
t
VCS
t
CES
t
t
t
OES
t
t
DFP
t
Address Valid to Program Low2µs
AS
Input Valid to Program Low2µs
DS
VPPHigh to Program Low
VCCHigh to Program Low
2µs
2µs
Chip Enable Low to Program Low2µs
Program Pulse Width95105µs
PW
Program High to Input Transition2µs
DH
Input Transition to Output Enable Low2µs
Output Enable Low to Output Valid100ns
OE
Output Enable High to Output Hi-Z0130ns
Output Enable High to Address
AH
Transition
0ns
Programming
The M27W201 hasbeen designed to be fully compatible withthe M27C2001 and hasthesameelectronic signature. As a result theM27W201 can be
programmed as the M27C2001 on the same programming equipment applying 12.75V on VPPand
6.25V on VCCby the use of the same PRESTO II
algorithm.
When delivered (and after each ‘1’serasureforUV
EPROM), all bits of the M27W201 are in the ’1’
state.Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although
only ’0’swill be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ‘0’to a ‘1’ is by die exposure to ultraviolet
light (UV EPROM). The M27W201 is in the programming mode when VPPinput is at 12.75V,E is
at VILand P is pulsed to VIL. The data to be programmed is applied to 8 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. VCCis specified to be
6.25V ± 0.25V.
7/15
Page 8
M27W201
Figure 6. Programming and Verify Modes AC Waveforms
A0-A17
tAVPL
Q0-Q7
V
PP
V
CC
E
P
G
DATA INDATA OUT
tQVPL
tVPHPL
tVCHPL
tELPL
tPLPH
Figure 7. Programming Flowchart
VCC= 6.25V, VPP= 12.75V
n=0
P = 100µs Pulse
NO
NO
VERIFY
YES
Last
NO
Addr
YES
CHECK ALL BYTES
1st: VCC=5V
2nd: VCC= 2.7V
++ Addr
YES
++n
=25
FAIL
VALID
tPHQX
tGLQV
tQXGL
PROGRAMVERIFY
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 26.5 seconds. Programming with PRESTO II consists of applying a
sequence of 100µs program pulses to each byte
until a correct verify occurs (see Figure 7). During
programming and verify operation, a MARGIN
MODE circuit is automatically activated in order to
guarantee that each cell is programmed with
enough margin. No overprogram pulse is applied
since the verify in MARGIN MODE at VCCmuch
higher than 3.6V, provides the necessary margin
to each programmed cell.
Program Inhibit
Programming of multiple M27W201s in parallel
with different data is also easily accomplished. Except for E, all like inputs including G of the parallel
M27W201 may be common. A TTL low level pulse
applied to a M27W201’s P input, with E low and
VPPat12.75V, will program that M27W201. A high
level E input inhibits the other M27W201s from being programmed.
Program Verify
AI00715D
A verify (read) should be performed on the programmed bits to determinethat theywere correctly programmed. The verify is accomplished with E
and G at VIL, P at VIH,VPPat 12.75V and VCCat
6.25V.
tGHQZ
tGHAX
AI00720
8/15
Page 9
M27W201
On-Board Programming
The M27W201 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code froman EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C ambient temperaturerange that is required when programming the M27W201. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27W201 with VPP=VCC= 5V. Two identifier
bytes may then be sequenced from the device outputs by togglingaddress line A0from VILtoVIH. All
other address lines must be held at VILduring
Electronic Signature mode. Byte 0 (A0 = VIL)
repres ents the manufacturer code and byte 1
(A0 = VIH) the device identifier code. For the
STMicroelectronics M27W201, these two identifier
bytes are given in Table 4 and can be read-out on
outputs Q7 to Q0. Note that the M27W201 and
M27C2001 have the same identifier byte.
ERASURE OPERATION(applies to UV EPROM)
The erasure characteristics of the M27W201 are
such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 Å range. Data
shows that constant exposure to room level fluorescent lighting could erase a typical M27W201 in
about 3 years, while it would takeapproximately 1
week to cause erasure when exposed to direct
sunlight. If the M27W201 is to be exposed tothese
types of lighting conditions for extended periods of
time, it issuggestedthat opaquelabelsbeput over
the M27W201 window to prevent unintentional
erasure. The recommended erasure procedure for
the M27W201is exposureto shortwave ultraviolet
light which has wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 15 W-sec/cm2.
The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with
12000 µW/cm2power rating. The M27W201
should be placed within 2.5 cm (1 inch) of thelamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
9/15
Page 10
M27W201
Table 11. Ordering Information Scheme
Example:M27W201-80 K6 TR
Device Type
M27
SupplyVoltage
W = 2.7V to 3.6V
Device Function
201 = 2 Mbit (256Kb x 8)
Speed
(1,2)
-80
-100 = 100 ns
=80ns
Not For New Design
(3)
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP32W
(4)
B = PDIP32
K = PLCC32
N = TSOP32: 8 x 20 mm
(4)
Temperature Range
6=–40to85°C
Options
TR = Tape& Reel Packing
Note: 1. High Speed, see AC Characteristics section forfurther information.
2. This speed also guarantees 70ns access time at V
3. These speeds are replaced by the 100ns.
4. Packages option available on request. Please contact STMicroelectronics local Sales Office.
= 3.0V to 3.6V.
CC
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 12. Revision History
DateRevision Details
July 1999First Issue
FDIP32W Package Dimension, L Max added (Table 13)
04/19/00
10/15
TSOP32 Package Dimension changed (Table 16)
0to70°C Temperature Range deleted
Programming Time changed
Page 11
M27W201
Table 13. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
Figure 11. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1α
14/15
Page 15
M27W201
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences
of use of such information norfor anyinfringement of patents orother rights of third parties whichmay result from itsuse. No license isgranted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in lifesupport devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
STMicroelectronics GROUP OF COMPANIES
http://www.st.com
15/15
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