Datasheet M27W201 Datasheet (SGS Thomson Microelectronics)

Page 1
M27W201
2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM
2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
ACCESS TIME:
–70nsatVCC= 3.0V to 3.6V –80nsatVCC= 2.7V to 3.6V
PIN COMPATIBLE withM27C2001
LOW POWER CONSUMPTION:
–15µA max Standby Current – 15mA max Active Current at 5MHz
PROGRAMMING TIME 100µs/byte
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection – 200mA Latchup Protection Immunity
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h – Device Code: 61h
32
1
FDIP32W (F) PDIP32 (B)
PLCC32 (K) TSOP32(N)
Figure 1. Logic Diagram
32
1
8x20mm
DESCRIPTION
The M27W201 is a low voltage 2 Mbit EPROM of­fered in the two range UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organised as 262,144 by 8 bits.
The M27W201 operates in the read mode with a supply voltage as low as 2.7V at –40 to 85°C tem­perature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery re­charges.
The FDIP32W (window ceramic frit-seal package) has a transparent lid which allows the user to ex­pose the chip to ultraviolet light to erase the bitpat­tern. A new pattern can then be written to the device by following the programming procedure.
For application where the content is programmed only one time and erasure is not required, the M27W201 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20 mm) packages.
A0-A17
V
18
P
E
G
V
CC
M27W201
V
SS
PP
8
Q0-Q7
AI01359
1/15April 2000
Page 2
M27W201
Figure 2A. DIP Connections
V
1
PP
2
A15
3
A12
4
A7
5
A6
6
A5
7
A4
8 A3 A2 A1 A0
Q0
Q2 SS
M27W201
9
10
11
12
13
14
15
16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
AI02675
V
CC
PA16 A17 A14 A13 A8 A9 A11 G A10 E Q7 Q6 Q5Q1 Q4 Q3V
Figure 2B. LCC Connections
A16
A7 A6 A5 A4 A3 A2 A1 A0
Q0
A12
9
Q1
VPPV
A15
1
32
M27W201
17
Q2
Q3
SS
V
Q4
CC
P
Q5
A17
25
Q6
A14 A13 A8 A9 A11 G A10 E Q7
AI01360
Figure 2C. TSOP Connections
A11 G
A9
A8 A13 A14 A17
V
CC
V
PP
A16 A15 A12
A7
A6
A5
A4 A3
1
P
M27W201
8
(Normal)
9
16 17
32
25 24
AI01361
A10 E Q7 Q6 Q5 Q4 Q3 V
SS
Q2 Q1 Q0 A0 A1 A2
Table 1. Signal Names
A0-A17 Address Inputs Q0-Q7 Data Outputs E Chip Enable G Output Enable P Program V
PP
V
CC
V
SS
Program Supply Supply Voltage Ground
2/15
Page 3
M27W201
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi­tions for extended periods may affect device reliability. Referalso to the STMicroelectronics SURE Program andother relevant qual­ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Outputis V
3. Depends on range.
Ambient Operating Temperature Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(3)
–40 to 125 °C
Table 3. Operating Modes
Mode E G P A9
Read Output Disable V Program Verify V Program Inhibit Standby Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
V
IL
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
XX XXV
VILPulse
V
IH
X
XVPPData Out XXX XXX
V
IL
V
IH
V
ID
V
PP
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q7-Q0
Data Out
Hi-Z
Data In
Hi-Z Hi-Z
Codes
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code Device Code
V
IL
V
IH
00100000 20h 01100001 61h
3/15
Page 4
M27W201
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
(1)
(TA=25°C, f = 1 MHz)
Input Capacitance Output Capacitance
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
DEVICE UNDER
TEST
CL= 30pFfor High Speed CL= 100pF for Standard CLincludes JIG capacitance
V
=0V
IN
V
=0V
OUT
1N914
3.3k
C
L
6pF
12 pF
OUT
AI01823B
DEVICE OPERATION
The operating modes of the M27W201 are listed in the Operating Modes table. A single power supply is required in the read mode. All inputs are TTL levels except for VPPand 12V on A9 for Electronic Signature.
Read Mode
The M27W201 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable(G) is the output control and should be used to gate data to the output pins, indepen­dent of device selection. Assuming that the ad­dresses are stable, the address access time
4/15
(t
) is equal to the delay from E to output
AVQV
(t
). Data is available attheoutputafteradelay
ELQV
of t
from the falling edge of G, assuming that
GLQV
E has been low and the addresses have been sta­ble for at least t
AVQV-tGLQV
.
Standby Mode
The M27W201 has a standby mode which reduc­es the supply current from 15mA to 15µA with low voltage operation VCC≤ 3.6V, see Read ModeDC Characteristics table for details.The M27W201 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input.
Page 5
M27W201
Table 7. Read Mode DC Characteristics
(1)
(TA= –40 to 85 °C; VCC= 2.7V to 3.6V; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
I
CC
I
CC
I
CC
I V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
1
Supply Current (Standby) TTL
2
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage –0.6
IL
(2)
Input High Voltage Output Low Voltage
OL
Output High VoltageTTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
I
OUT
0V V
0V V
E=V
E>V
I
V
IN
CC
V
OUT
IL
= 0mA, f = 5MHz
V
CC
E=V
CC
V
CC
V
PP=VCC
I
= 2.1mA
OL
= –400µA
OH
CC
,G=VIL,
3.6V
IH
– 0.2V
3.6V
±10 µA ±10 µA
15 mA
1mA
15 µA
10 µA
0.2 V
CC
0.7 V
CCVCC
2.4 V
+ 0.5
0.4 V
V V
Two Line Output Control
Because EPROMs are usually used in larger memory arrays, this product features a 2 line con­trol function which accommodates the use of mul­tiple memory connection. The two line control function allows:
a. the lowest possible memory power dissipation, b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control lines, Eshould be decoded and used as theprima­ry device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system controlbus. This ensures that all deselect­ed memory devices are intheir low power standby mode and that the output pins are only active when data is required from a particular memory device.
System Considerations
The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, ICC, has three seg­ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising ed ges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output.
The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling ca­pacitors. It is recommended that a 0.1µF ceramic capacitor be used on every device between V
CC
and VSS. This should be a high frequency capaci­tor of low inherent inductance and should be placed as close to the device as possible. In addi­tion, a 4.7µF bulk electrolytic capacitor should be used between VCCand VSSfor every eight devic­es. The bulk capacitor should be located near the power supply connection point. The purposeofthe bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.
5/15
Page 6
M27W201
Table 8. Read Mode AC Characteristics
(1)
(TA= –40 to 85 °C; VCC= 2.7V to 3.6V; VPP=VCC)
M27W201
(3)
Symbol Alt Parameter
Test
Condition
V
= 3.0V to 3.6V VCC= 2.7V to 3.6V VCC= 2.7V to 3.6V
CC
Min Max Min Max Min Max
E=V G=V
G=V
E=V
G=V
E=V
E=V G=V
,
IL
IL
IL
IL
IL
IL
,
IL
IL
040050060ns
040050060ns
000ns
t
AVQVtACC
t
ELQVtCE
t
GLQVtOE
(2)
t
EHQZ
(2)
t
GHQZ
t
AXQXtOH
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Address Valid to Output Valid
Chip Enable Low to Output Valid
Output Enable Low to Output Valid
Chip Enable High to
t
DF
Output Hi-Z Output Enable High
t
DF
to Output Hi-Z Address Transition to
Output Transition
-80
70 80 100 ns
70 80 100 ns
40 50 60 ns
-100
(-120/-150/-200)
Unit
Figure 5. Read Mode AC Waveforms
A0-A17
tAVQV
E
G
tELQV
Q0-Q7
VALID
tGLQV
VALID
tAXQX
tEHQZ
tGHQZ
Hi-Z
AI00719B
6/15
Page 7
M27W201
Table 9. Programming Mode DC Characteristics
(1)
(TA=25°C; VCC= 6.25V ± 0.25V; VPP= 12.75V ± 0.25V)
Symbol Parameter Test Condition Min Max Unit
I
LI
I
CC
I
PP
V V
V
OL
V
OH
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current Supply Current 50 mA Program Current Input Low Voltage –0.3 0.8 V
IL
Input High Voltage 2 VCC+ 0.5 V
IH
Output Low Voltage Output High Voltage TTL IOH= –400µA 2.4 V A9 Voltage 11.5 12.5 V
ID
Table 10. Programming Mode AC Characteristics
0 V
I
OL
(1)
V
IN
E=V
= 2.1mA
CC
IL
±10 µA
50 mA
0.4 V
(TA=25°C; VCC= 6.25V ± 0.25V; VPP= 12.75V ± 0.25V)
Symbol Alt Parameter Test Condition Min Max Unit
t
AVPL
t
QVPL
t
VPHPL
t
VCHPL
t
ELPL
t
PLPH
t
PHQX
t
QXGL
t
GLQV
(2)
t
GHQZ
t
GHAX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
t t
t
VPS
t
VCS
t
CES
t
t
t
OES
t
t
DFP
t
Address Valid to Program Low 2 µs
AS
Input Valid to Program Low 2 µs
DS
VPPHigh to Program Low VCCHigh to Program Low
2 µs
2 µs Chip Enable Low to Program Low 2 µs Program Pulse Width 95 105 µs
PW
Program High to Input Transition 2 µs
DH
Input Transition to Output Enable Low 2 µs Output Enable Low to Output Valid 100 ns
OE
Output Enable High to Output Hi-Z 0 130 ns Output Enable High to Address
AH
Transition
0ns
Programming
The M27W201 hasbeen designed to be fully com­patible withthe M27C2001 and hasthesameelec­tronic signature. As a result theM27W201 can be programmed as the M27C2001 on the same pro­gramming equipment applying 12.75V on VPPand
6.25V on VCCby the use of the same PRESTO II algorithm.
When delivered (and after each ‘1’serasureforUV EPROM), all bits of the M27W201 are in the ’1’ state.Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although only ’0’swill be programmed, both ’1’s and ’0’s can be present in the data word. The only way to change a ‘0’to a ‘1’ is by die exposure to ultraviolet light (UV EPROM). The M27W201 is in the pro­gramming mode when VPPinput is at 12.75V,E is at VILand P is pulsed to VIL. The data to be pro­grammed is applied to 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. VCCis specified to be
6.25V ± 0.25V.
7/15
Page 8
M27W201
Figure 6. Programming and Verify Modes AC Waveforms
A0-A17
tAVPL
Q0-Q7
V
PP
V
CC
E
P
G
DATA IN DATA OUT
tQVPL
tVPHPL
tVCHPL
tELPL
tPLPH
Figure 7. Programming Flowchart
VCC= 6.25V, VPP= 12.75V
n=0
P = 100µs Pulse
NO
NO
VERIFY
YES
Last
NO
Addr
YES
CHECK ALL BYTES
1st: VCC=5V
2nd: VCC= 2.7V
++ Addr
YES
++n
=25
FAIL
VALID
tPHQX
tGLQV
tQXGL
PROGRAM VERIFY
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the whole array to be programmed with a guaranteed margin, in a typical time of 26.5 seconds. Pro­gramming with PRESTO II consists of applying a sequence of 100µs program pulses to each byte until a correct verify occurs (see Figure 7). During programming and verify operation, a MARGIN MODE circuit is automatically activated in order to guarantee that each cell is programmed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE at VCCmuch higher than 3.6V, provides the necessary margin to each programmed cell.
Program Inhibit
Programming of multiple M27W201s in parallel with different data is also easily accomplished. Ex­cept for E, all like inputs including G of the parallel M27W201 may be common. A TTL low level pulse applied to a M27W201’s P input, with E low and VPPat12.75V, will program that M27W201. A high level E input inhibits the other M27W201s from be­ing programmed.
Program Verify
AI00715D
A verify (read) should be performed on the pro­grammed bits to determinethat theywere correct­ly programmed. The verify is accomplished with E and G at VIL, P at VIH,VPPat 12.75V and VCCat
6.25V.
tGHQZ
tGHAX
AI00720
8/15
Page 9
M27W201
On-Board Programming
The M27W201 can be directly programmed in the application circuit. See the relevant Application Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the reading out of a binary code froman EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C am­bient temperaturerange that is required when pro­gramming the M27W201. To activate the ES mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the M27W201 with VPP=VCC= 5V. Two identifier bytes may then be sequenced from the device out­puts by togglingaddress line A0from VILtoVIH. All other address lines must be held at VILduring Electronic Signature mode. Byte 0 (A0 = VIL) repres ents the manufacturer code and byte 1 (A0 = VIH) the device identifier code. For the STMicroelectronics M27W201, these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0. Note that the M27W201 and M27C2001 have the same identifier byte.
ERASURE OPERATION(applies to UV EPROM)
The erasure characteristics of the M27W201 are such that erasure begins when the cells are ex­posed to light with wavelengths shorter than ap­proximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Data shows that constant exposure to room level fluo­rescent lighting could erase a typical M27W201 in about 3 years, while it would takeapproximately 1 week to cause erasure when exposed to direct sunlight. If the M27W201 is to be exposed tothese types of lighting conditions for extended periods of time, it issuggestedthat opaquelabelsbeput over the M27W201 window to prevent unintentional erasure. The recommended erasure procedure for the M27W201is exposureto shortwave ultraviolet light which has wavelength of 2537 Å. The inte­grated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximate­ly 15 to 20 minutes using an ultraviolet lamp with 12000 µW/cm2power rating. The M27W201 should be placed within 2.5 cm (1 inch) of thelamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.
9/15
Page 10
M27W201
Table 11. Ordering Information Scheme
Example: M27W201 -80 K 6 TR
Device Type
M27
SupplyVoltage
W = 2.7V to 3.6V
Device Function
201 = 2 Mbit (256Kb x 8)
Speed
(1,2)
-80
-100 = 100 ns
=80ns
Not For New Design
(3)
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP32W
(4)
B = PDIP32 K = PLCC32
N = TSOP32: 8 x 20 mm
(4)
Temperature Range
6=–40to85°C
Options
TR = Tape& Reel Packing
Note: 1. High Speed, see AC Characteristics section forfurther information.
2. This speed also guarantees 70ns access time at V
3. These speeds are replaced by the 100ns.
4. Packages option available on request. Please contact STMicroelectronics local Sales Office.
= 3.0V to 3.6V.
CC
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de­vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 12. Revision History
Date Revision Details
July 1999 First Issue
FDIP32W Package Dimension, L Max added (Table 13)
04/19/00
10/15
TSOP32 Package Dimension changed (Table 16) 0to70°C Temperature Range deleted Programming Time changed
Page 11
M27W201
Table 13. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symbol
A 5.72 0.225 A1 0.51 1.40 0.020 0.055 A2 3.91 4.57 0.154 0.180 A3 3.89 4.50 0.153 0.177
B 0.41 0.56 0.016 0.022 B1 1.45 0.057
C 0.23 0.30 0.009 0.012 D 41.73 42.04 1.643 1.655
D2 38.10 1.500
E 15.24 0.600 – E1 13.06 13.36 0.514 0.526
e 2.54 0.100 – eA 14.99 0.590 – eB 16.18 18.03 0.637 0.710
L 3.18 4.10 0.125 0.161
S 1.52 2.49 0.060 0.098
7.11 0.280
α 4° 11° 4° 11°
N32 32
Typ Min Max Typ Min Max
mm inches
Figure 8. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Outline
A2
B1 B e
A3A1A
L
α
C
eA
D2
eB
D
S
N
1
Drawing is not to scale.
E1 E
FDIPW-a
11/15
Page 12
M27W201
Table 14. PDIP32 -32 lead Plastic DIP, 600 mils width, Package Mechanical Data
Symbol
Typ Min Max Typ Min Max
A 5.08 0.200 A1 0.38 0.015 – A2 3.56 4.06 0.140 0.160
B 0.38 0.51 0.015 0.020 B1 1.52 0.060
C 0.20 0.30 0.008 0.012 D 41.78 42.04 1.645 1.655
D2 38.10 1.500
E 15.24 0.600 – E1 13.59 13.84 0.535 0.545
e1 2.54 0.100 – eA 15.24 0.600 – eB 15.24 17.78 0.600 0.700
L 3.18 3.43 0.125 0.135 S 1.78 2.03 0.070 0.080 α 0° 10° 0° 10°
N32 32
mm inches
Figure 9. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Outline
A2A1A
L
B1 B e1
D2
α
eA
eB
D
S
N
E1 E
1
Drawing is not to scale.
C
PDIP
12/15
Page 13
M27W201
Table 15. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Mechanical Data
Symbol
A 2.54 3.56 0.100 0.140 A1 1.52 2.41 0.060 0.095 A2 0.38 0.015
B 0.33 0.53 0.013 0.021 B1 0.66 0.81 0.026 0.032
D 12.32 12.57 0.485 0.495 D1 11.35 11.56 0.447 0.455 D2 9.91 10.92 0.390 0.430
E 14.86 15.11 0.585 0.595 E1 13.89 14.10 0.547 0.555 E2 12.45 13.46 0.490 0.530
e 1.27 0.050
F 0.00 0.25 0.000 0.010
R 0.89 0.035
N32 32 Nd 7 7 Ne 9 9
CP 0.10 0.004
Typ Min Max Typ Min Max
mm inches
Figure 10. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Outline
D
D1
1N
Ne E1 E
F
D2/E2
A2
B
0.51 (.020)
1.14 (.045)
PLCC
Drawing is not to scale.
Nd
R
CP
A
A1
B1
e
13/15
Page 14
M27W201
Table 16. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Mechanical Data
Symbol
Typ Min Max Typ Min Max
A 1.200 0.0472 A1 0.050 0.150 0.0020 0.0059 A2 0.950 1.050 0.0374 0.0413
B 0.150 0.270 0.0059 0.0106
C 0.100 0.210 0.0039 0.0083 D 19.800 20.200 0.7795 0.7953
D1 18.300 18.500 0.7205 0.7283
e 0.500 0.0197
E 7.900 8.100 0.3110 0.3189
L 0.500 0.700 0.0197 0.0276
α 0° 5° 0° 5°
CP 0.100 0.0039
N32 32
mm inch
Figure 11. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1 α
14/15
Page 15
M27W201
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences of use of such information norfor anyinfringement of patents orother rights of third parties whichmay result from itsuse. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written approval of STMicroelectronics.
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