The M27W064 is a 64 Mbit (4Mb x16) non-volatile,
One Time Programmable (OT P), FlexibleROM™
Memory. Read operations can be performed using
a single low voltage (2.7 to 3.6V) supply. Program
operations require an additional V
(11.4 to
PP
12.6V) power supply. On power-up the memory
defaults to Read mode where it can be read in the
same way as a ROM or EPROM.
Program commands are written to t he Command
Interface of the memory. An on-chip Program Controller (PC) simplifies the process of programming
the memory by taking care of all of the special operations that are required to update the memory
conte nts.
The M27W064 features an in novative command,
Multiple Word Program, used to program large
streams of data. It greatly reduces the total pro-
Figure 2. Logic DiagramTable 1. Signal Names
gramming time when a large number of Words are
written to the memory at any one time. Using this
command the entire memory can be program m ed
in 8s, compared to 36s us ing the standard Word
Progra m.
The end of a program operation can be de tected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Chip Enable and Output Enable signals control the
bus operation of the memory. They allo w simple
connection to most microprocessors, often without
additional logic.
The memory is offered in SO44 a nd TS OP48 (12
x 20mm) packages. T he mem ory is supplied with
all the bits set to ’1’.
A0-A21Address Inputs
V
V
22
A0-A21DQ0-DQ15
E
G
M27W064
V
CC
SS
PP
16
AI05960
DQ0-DQ15Data Inputs/Outputs
E
G
V
CC
V
PP
V
SS
NCNot Connected Internally
Chip Enable
Output Enable
Supply Voltage read
Supply Voltage program
Ground
4/23
Page 5
Figure 3. SO Connecti onsFigure 4. TSOP Con nections
See Figure 2, Logic Diagram, and Table 1, Sign al
Names, for a brief overview of the signals connected to this de vice.
Address Inputs (A0-A21). The Address Inputs
select the cell s in th e memory array to a ccess during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the Program Controller.
Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the command
sent to the Command Interface of the Program
Controller. When reading the Status Register they
report the status of the ongoing algorithm.
Data Inputs/Outputs (DQ8-DQ15). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations the Command Interface does not
use these bits. When reading t he Status Register
these bits should be ignored.
Chip Enable (E
the memory, allowing Bus Read operat ions to be
performed. It also controls the B us Write operations, when V
Output Enable (G
trols the Bus Read operations of the memory. It
). The Chip Enable, E, activates
is in the VHH range.
PP
). The Ou tput Enable, G, con-
also allows Bus Write operations, when V
the V
V
range.
HH
Supply Voltage. The VCC Supply Voltage
CC
PP
is in
supplies the power for Read operations.
A 0.1µF capacitor should be connec ted between
the V
Supply Voltage pin and the VSS Ground
CC
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during program operations, I
V
PP
.
CC3
Program Supply Voltage. VPP is both a
power supply and Write Protect pin. The two functions are selected by t he voltage range applie d t o
the pin.
When the V
is in the VHH range (see Table 10,
PP
DC Characteristic, for the relevant values) the Program operation is enabled. During such operations the V
If the V
must be stable in the VHH range.
PP
is kept under the VHH range, particularly
PP
in the voltage range 0 to 3.6V, any Program operation is disabled or stopped.
Note that V
must not be left floating o r uncon-
PP
nected as the device may become unreliable.
Vss Ground. The V
Ground is the reference
SS
for all voltage measurements.
6/23
Page 7
BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Wri te, Output Disable, Standby, Automatic Standby and
Electronic Signature. See Tables 2, Bus Operations, for a summary. Typically glitches of less
than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs and applying a Low signal, V
, to Chip En-
IL
able and Output Enable. The Data Inputs/Outpu ts
will output the value, see Figure 10, Read AC
Waveforms, and Table 11, Read AC Ch aracteristics, for details of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. Bus Write is enabled only
when V
is set to VHH. A valid Bus W rite opera-
PP
tion begins by setting the desired addres s on the
Address Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable. The Data I nputs/Outputs are latched by
the Command Interface on the rising edge of Chip
Enable. Output Enable must remain High, V
IH
during the whole Bus W rite operat ion . See Figure
11, Write AC Waveforms, and Table 12, Write AC
Characteristics, for details of the timing requirements.
Output Disa bl e . The Data Inputs/Outputs are in
the high impedance s tate when Output Enable is
High, V
.
IH
Standby. When Chip Enable is High, V
memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedance state. To reduce the S upply Current to the
Standby Supply Current, I
be held within V
± 0.2V. For the Standby current
CC
, Chip Enable should
CC2
level see Table 10, DC Characteristics.
During program operation the memory will cont in-
ue to use the Program Supply Current, I
Program operation until the operation completes.
Automatic Standby. If CMOS levels (V
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is reduced to the Standby Supply Current, I
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying t he signals
listed in Tables 2, Bus Operat ions, once the A uto
,
Select Command is executed. To exit Electronic
Signature mode, the Read/Reset command must
be issued.
M27W064
, the
IH
, for
CC3
± 0.2V)
CC
. The
CC2
Table 2. Bus Operations
OperationEG
HH
V
IL
V
IL
V
IH
V
IL
V
IL
Bus Read
Bus Write
Output DisableX
Standby
Read Manufacturer
Code
Read Device Code
Note: 1. X = VIL or VIH.
2. XX = V
3. When readin g Status Register during Program algorithm execution VPP must be kept at VHH.
, VIHor V
IL
V
IL
V
IH
V
IH
XXXHi-Z
V
IL
V
IL
V
PP
(3)
XX
V
HH
XXHi-Z
V
HH
V
HH
Address Inputs
A0-A21
Cell AddressData Output
Command AddressData Input
A0 = VIL, A1 = VIL,
Others VIL or V
A0 = VIH, A1 = VIL,
Others VIL or V
IH
IH
Data Inputs/Outputs
DQ15-DQ0
0020h
888Ah
7/23
Page 8
M27W064
COMMAND INTERFACE
All Bus Write operations t o the me mory are in terpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus
Write operations will result in the memory returning to Read mode. The long command sequences
are imposed to maximize data security.
Refer to Tables 3 and 4, for a summary of the commands.
Read/Reset Command.
The Read/Reset command returns the memory to
its Read mode where it behaves like a ROM or
EPROM, unless otherwise stated. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be u sed to issue
the Read/Reset command.
must be set to VHH during the Read/Reset
V
PP
command. If V
mand will be ignored. The command can be issued, between Bus Write cycles before the start of
a program operation, to return the device to read
mode. Once the program operation has started the
Read/Reset command is no longer accepted.
Auto Select Command.
The Auto Select command is used to read the
Manufacturer Code and the Device Code. V
must be set to VHH during the Auto Select command. If V
mand will be ignored. Three consecutive Bus
Write operations are required to issue the Auto Select command. Once the Auto Sele ct com ma nd is
issued the memory remai ns in Auto Select m ode
until a Read/Reset com mand is issued, all other
commands are ignored.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits
may be set to either V
The Device Code can be read using a B us Read
operation with A0 = V
address bits may be set to either V
Word Progr a m Com m a n d.
The Word Program command can be used to program a Word to the memory array. V
set to V
ther V
HH
or VIH the command will be ignored, the
IL
data will remain unchanged and the device will revert to Read/Reset mode. The command requires
four Bus Write operations, the final write operation
latches the address and data in the internal state
machine and starts the PC.
During the program operatio n the memor y will ignore all commands. I t is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 5. Bus Read op-
is set to either V
PP
is set to either V
PP
or VIH.
IL
and A1 = VIL. The other
IH
IL
IL
or V
or V
IL
the com-
IH
the com-
IH
or VIH.
must be
PP
PP
during Word Program. If VPP is set to ei-
erations during the program operation wi ll output
the Status Register on the Data Inputs/Outputs.
See the section on the S tatus Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unle ss an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’.
Multiple Word Program Command
The Multiple Word Program command can be
used to program large streams of data. It greatly
reduces the total programming time when a l arge
number of Words are written in the memory at
once. V
Program. If V
must be set to VHH during Multiple Word
PP
is set either VIL or VIH the com-
PP
mand will be ignored, the data will remain unchanged and the device will revert to Read mode.
It has four phases: the Setup P hase to initiate the
command, the Program Phase to program the
data to the memory, the Verify Phase to check that
the data has been correctly programmed and reprogram if necessary and the Exit Phase.
Setup Phase. The M ultiple Word Program command requires three Bus Write operations to initiate the command (refer to Table 4, Multiple Word
Program Command and Figure 8, Multiple Word
Program Flowchart).
The Status Register must be read in order to
check that the PC has started (see Table 6 and
Figure 6).
Program Phase. The Program Phase requires
n+1 Bus Write operations, where n is the num ber
of Words, to execute the programming phase (refer to Table 4, Multiple Word Program and Figure
5, Multiple Word Program Flowchart).
Before any Bus Write operation of the Program
Phase, the Status Register m ust be read i n order
to check that the PC is ready to accept the operation (see Table 6 and Figure 6).
The Program Phase is executed in three different
sub-phases:
1. The first Bus Write operation of the Program
Phase (the 4th of the command) latches the
Start Address and the first Word to be
programmed.
2. Each subsequ ent Bus Write op eration latches
the next Word to be programmed and
automatically increments the internal Address
Bus. It is not necessary to provide the address
of the location to be programmed but only a
Continue Address, CA (A17 to A21 equal to the
8/23
Page 9
M27W064
Start Address), that indicates to the PC that the
Program Phase has to continue. A0 to A16 are
‘don’t car e ’.
3. Finally, after all Words have been programmed,
a Bus Write operation (the (n+1)
th
) with a Final
Address, FA (A17 or a higher address pin
different from the Start Address), ends the
Program Phase.
The memory is now set to enter the Verify Phase.
Verify Phase. Th e Verify Phase is sim ilar to the
Program Phase in that all Words must be resent to
the memory for them to be che cked against the
programmed data.
Before any Bus Write Operation of the Verify
Phase, the Status Register m ust be read i n order
to check that the PC is ready for the next operation
or if the reprogram of the location has failed (see
Table 6 and Figure 6).
Three successive steps are required to execute
the Verify Phase of the command:
1. The first Bus Write operation of the Verify Phase
latches the Start A ddress and the Word t o be
verified.
2. Each subsequ ent Bus Write operation latches
the next Word to be verified and automatically
increments the internal Address B us. As in the
Program Phase, it is not necessary to provide
the address of the location to be program med
but only a Continue Address, CA (A17 to A 21
equal to the Start Address).
3. Finally, after all Words have been verified, a Bus
Write cycle with a Final Address, FA (A17 or a
higher address pin different from the Start
Address) ends the Verify Phase.
Exit Phase. After the Verify Phase ends, the Status Register must be read to check if the command
has successfully completed or not (see Table 6
and Figure 6).
If the Verify Phase is succ essful, the memory returns to Read mode and DQ6 stops toggling.
If the PC fails to reprogram a given location, the
Verify Phase terminates, DQ6 continues toggl ing
and error bit DQ5 is set in the Statu s Register. If
the error is due to a V
failure DQ4 is also set.
PP
When the operation fails a Read/Reset command
must be issued to return the device to Read mode.
During the Multiple Word Program operation the
memory will ignore all commands. It is not possible
to issue any command to abort or pause the operation. Typical program times are give n in Table 5.
Bus Read operations during the program operati on wil l output the Statu s Register on th e Data I nputs/Outputs. See the section on the Status
Register for more details.
Note that the Multiple Word Program command
cannot change a bit set to ’0’ back to ’1’.
9/23
Page 10
M27W064
Table 3. Standard Commands
Bus Write Operations
Command
Length
1st2nd3rd4th
AddDataAddDataAddDataAddData
1XF0
Read/Reset
3555AA2AA55XF0
Auto Select3555AA2AA5555590
Word Program4555AA2AA55555A0PAPD
Note: X Don’t Care, PA Program Address, PD Program Data. All values in the table are in hexadecimal. The Command Interface only uses
A0-A10 and DQ0-DQ7 to verify the command s; A11-A21, DQ8-DQ15 are Don’t Care.
Table 4. Multiple Word Program Command
Bus Write Operations
Phase
Length
1st2nd3rd4th5thnthFinal
Add Data Add Data Add Data Add Data Add DataAdd Data Add Data
Set-Up 3555AA2AA5555520
Program n+1SAPD1CAPD2CAPD3CAPD4CAPD5CAPAnFAX
Verifyn+1SAPD1CAPD2CAPD3CAPD4CAPD5CAPAnFAX
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check
that the memory is ready to accept the next data. SA is the Start Address. CA is the Continue Address. FA is the Final Address. X Don’t
Care, n = number of Words to be programmed.
Tabl e 5. Program Time s
Parameter
Typ
(1)
MaxU nit
Program (Word)9200µs
Chip Program (Multiple Word)8140s
Chip Program (Word by Word)36140s
Note: 1. TA = 25°C, VPP = 12V.
10/23
Page 11
Figure 5. Mul ti pl e W or d Program Fl owchart
M27W064
Setup
Phase
NO
Setup time
exceeded?
EXIT (
Program
Phase
YES
setup failed)
Start
Write AAh
Address 555h
Write 55h
Address 2AAh
Write 20h
Address 555h
Read Status
Register
NO
DQ6
toggling?
YES
NO
DQ0 = 0?
YES
Write Data1
Start Address
Read Status
Register
DQ0 = 0?
YES
Write Data 2
Continue Address
Read Status
Register
DQ0 = 0?
Write Data n
Continue Address
Read Status
Register
DQ0 = 0?
YES
Write XX
Final Address
YES
NO
NO
NO
Read Status
Register
DQ0 = 0?
Write Data1
Start Address
Read Status
Register
DQ0 = 0?
YES
Write Data 2
Continue Address
Read Status
Register
DQ0 = 0?
YES
Write Data n
Continue Address
Read Status
Register
DQ0 = 0?
YES
Write XX
Final Address
Read Status
Register
DQ6
toggling?
NO
NO
NO
DQ5 = 1 ?
NO
DQ5 = 1?
NO
YES
DQ5 = 1?
Fail error
Exit (read mode)
Verify
Phase
NO
NO
NO
YES
YES
YES
YES
Read Status
Register
DQ4 = 0?
Write F0h
Address XX
Exit
Phase
NO
Fail, VPP error
AI05954b
11/23
Page 12
M27W064
STATUS REGISTER
Bus Read operations from any address always
read the Status Register during Program operations. The bits in the Status Register are summarized in Table 6, Status Register Bits.
Data Polling Bit (DQ7). The Data Polling Bit can
be used to identify whether the Program Controller
has successfully completed its operation. The
Data Polling Bit is output on DQ7 when the Status
Register is read.
During a Word Program operation the Data Polling
Bit outputs the complement of the bit being programmed to DQ7. After successful completion of
the Word Program ope ration the memory returns
to Read mode and Bus Read operations from the
address just programmed output DQ7, not its complement.
Figure 6, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed.
Toggle Bit (DQ6). The Toggle Bit can be used to
identify whether the Program Con troller has successfully completed its operation. The Toggle Bit
is output on DQ6 when the Status Register is read.
During Program operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus
Read operations at any address. After successful
completion of the operation the memory returns to
Read mode.
Figure 7, Data Toggle Flowchart, g ives an e xample of how to use the Data Toggle Bit.
Error Bit (DQ5). The Error Bit can be used to
identify errors detected by the Program Controller.
The Error Bit is set to ’1’ when a Program operation fails to write the correct data to the memory. If
the Error Bit is set a Read/ Reset command m ust
be issued before other commands are issued. The
Error bit is output on DQ5 when the Status Register is read.
Note that the Program command cannot change a
bit set to ’0’ back to ’1’ and attempting to do so will
set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
Status Bit (DQ4). The VPP Status Bit can be
V
PP
used to identify if any Program operation has failed
due to a V
error. If V
PP
falls below VHH during
PP
any Program operation, the operation a borts and
DQ4 is set to ‘1’. If V
remains at VHHthroughout
PP
the Program operation, the operation completes
and DQ4 is set to ‘0’.
Multiple Word Program Bit (DQ0). The Multiple
Word Program Bit can be used to indicate whether
the Program Controller is active or inactive during
Multiple Word Program. When the P rogram Controller has written one Word and is ready to accept
the next Word, the bit is set to ‘0’.
Status Register Bit DQ1 is reserved.
12/23
Page 13
Table 6. Status Register Bits
Command
(1)
M27W064
P.C. StatusDQ7DQ6DQ5DQ4DQ3DQ 0
Programming–Toggle0–01
Multiple Word Program
Word Program
Note: 1. Unspecified dat a bi ts should be ignored.
2. DQ4 = 0 if V
≥ VHH during Pr ogram algorithm execut i on; DQ4 = 1 if VPP < VHH during Progr am al g orithm execution.
PP
Waiting for data–Toggle0–00
Program fail–Toggle1
ProgrammingDQ7
Program errorDQ7
Toggle0–0–
Toggle1
(2)
(2)
Figure 6. Dat a Po lling Flowch a rtFigure 7. Dat a Toggle Flow c hart
DQ5 & DQ6
READ DQ6
TOGGLE
NO
READ DQ6
TOGGLE
START
READ
DQ6
=
DQ5
= 1
TWICE
DQ6
=
NO
YES
YES
NO
YES
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
YES
=
DATA
NO
NO
DQ5
= 1
YES
READ DQ7
at VALID ADDRESS
DQ7
YES
=
DATA
NO
FAILPASS
01
0–
AI03598
FAILPASS
AI01370B
13/23
Page 14
M27W064
MAXIMUM RATIN G
Stressing the device above the rating l isted in the
“Absolute Maximum Ratings" table may cause
permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability. These are
stress ratings only and operation of the dev ice at
Table 7. Absolute Maximum Ratings
SymbolParameterMinMaxUnit
T
BIAS
T
STG
V
IO
V
CC
V
PP
Note: 1. Mini m um voltage ma y undershoo t t o –2V for less tha n 20ns during transitions .
2. M aximum voltage may overs hoot to V
3. M aximum voltage may ov ershoot to 14.0V for l ess than 20ns during transit i ons. V
of 80hrs.
Temperature Under Bias–50125°C
Storage Temperature–65150°C
Input or Output Voltage
(1,2)
Read Supply Voltage–0.64V
Program Supply Voltage
(3)
+2V for less than 20ns during transitions.
CC
these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Refer also to the STMicroelectronics
SURE Program and other relevan t quality documents.
V
–0.6
–0.613.5V
must not remain at VHH for more than a total
PP
CC
+0.6
V
14/23
Page 15
DC AND AC PARAMETERS
This section summarizes t he operating meas urement conditions, and the DC and AC characteristics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 8. Operating and AC Measurement Conditions
M27W064
Conditions summarized in Table 8, Operating and
AC Measurement Conditions. Designers should
check that the operating cond itions in their circuit
match the operating conditions when relying on
the quoted parameters.
M = SO44, 500mils body width
N = TSOP48: 12 x 20 mm
= 2.7 to 3.6V
CC
(1)
M27W064
Temperature Rang e
1 = 0 to 70 °C
Option
T = Tape & Reel Packing
Note: 1. This speed also guarantees 90 ns access tim e at VCC = 3.0 to 3.6V.
Devices are shipped from the factory with all the bits set to ’1’.
For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this de-
vice, please contact the ST Sales Office nearest to you.
21/23
Page 22
M27W064
REVISION HIST ORY
Table 16. Document Revision History
DateVersionRevision Details
28-Jun-20021.0First Issue
09-Jul-20022.0
02-Aug-20022.1
27-Sep-20022.2Product Naming revised
18-Nov-20022.3
100ns speed class added (90ns at V
Product Name changed
Multiple Word Program Command Table clarified (Table 4)
I
, I
CC1
clarified (Table 10)
CC2
OTP specification added
SO44 package changed to 500mils body width
Bus Operation table clarified (Table 2)
Read/Reset, Auto Select and Multiple Word Program commands clarified
= 3.0 to 3.6V)
CC
30-Nov-20022.4
90ns speed class obtained from the 100ns at V
and 12)
= 3.0 to 3.6V - clarifiication (T able 11
CC
22/23
Page 23
M27W064
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are sub j ect
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ronics.
The ST logo i s a registered trademark of STM i croelect ronics
FlexibleR O M i s a pending trademark of ST M i croelectro ni cs
All other nam es are the pro perty of their respective owners