4 Mbit (256Kb x 16) Low Voltage UV EPROM and OTP EPROM
■ LOW VOLTAGEREAD OPERATION:
3V to 3.6V
■ FAST ACCESS TIME: 120ns
■ LOW POWERCONSUMPTION:
– Active Current15mA at 5MHz
– Standby Current 20µA
■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■ PROGRAMMING TIME: 100µs/byte (typical)
■ ELECTRONIC SIGNATURE
– Manufacturer Code:20h
– Device Code: 8Dh
DESCRIPTION
The M27V402 is a low voltage, low power 4 Mbit
UV erasable and electrically programmable
EPROM, ideally suited for handheld and portable
microprocessor systems requiring large programs.
It is organized as 262,144 by16 bits.
The M27V402 operates in the read mode with a
supply voltage as low as 3V. The decrease in operating power allowseither a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to expose thechip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the
device by followingthe programming procedure.
40
1
FDIP40W (F)PDIP40 (B)
PLCC44 (K)TSOP40 (N)
Figure 1. Logic Diagram
V
18
A0-A17Q0-Q15
CC
40
V
PP
1
10 x 20 mm
16
Table 1. Signal Names
A0-A17Address Inputs
Q0-Q15Data Outputs
EChip Enable
GOutput Enable
V
A5
A4
A3
A2
A1
A0
G
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
SS
Warning: NC = Not Connected.
For applications wherethe content isprogrammed
only one time and erasure is not required, the
M27V256 is offered in PDIP40, PLCC44 and
TSOP40 (10 x 20 mm) packages.
DEVICE OPERATION
The operating modes of the M27V402 arelisted in
the OperatingModes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for VPPand 12V on A9 forElectronic
Signature.
Read Mode
The M27V402 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output controland should
be used to gate data to the output pins,
independent of device selection. Assuming that
the addresses arestable, the address accesstime
(t
) is equal to the delay from E to output
AVQV
(t
). Data is availableattheoutput after a delay
ELQV
of t
from the falling edge of G, assuming that
GLQV
E has been low and the addresses have been
stable for at least t
AVQV-tGLQV
.
2/15
Page 3
M27V402
Table 2. Absolute Maximum Ratings
(1)
SymbolParameterValueUnit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings onlyand operation of the device atthese or anyother conditions
above those indicated in the Operating sections of this specification is not implied. Exposure toAbsolute Maximum Rating conditions for extended periods may affect device reliability. Referalso to the STMicroelectronics SUREProgram andotherrelevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
3. Depends on range.
Ambient Operating Temperature
Temperature Under Bias–50 to 125°C
Storage Temperature–65 to 150°C
Input or Output Voltage (except A9)–2 to 7V
Supply Voltage–2 to 7V
A9 Voltage–2 to 13.5V
Program Supply Voltage–2 to 14V
+0.5V with possible overshoot to VCC+2V for a period less than20ns.
CC
(3)
–40 to 125°C
Table 3. Operating Modes
ModeEGA9
Read
Output DisableV
Program
V
VerifyV
Program Inhibit
Standby
Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
PulseV
IL
IH
V
IH
V
IH
V
IL
V
IL
V
IH
IH
V
IL
V
IH
X
XV
X
XVPPData Out
X
XX
V
IL
V
ID
V
PP
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q0-Q15
Data Out
Hi-Z
Data In
Hi-Z
Hi-Z
Codes
Table 4. Electronic Signature
IdentifierA0Q7Q6Q5Q4Q3Q2Q1Q0Hex Data
Manufacturer’s Code
Device Code
V
IL
V
IH
Standby Mode
The M27V402 has a standbymode which reduces
the supply current from 20mA to 20µA with low
voltage operationVCC≤ 3.6V, see Read Mode DC
00100000 20h
10001101 8Dh
Characteristics table for details. The M27V402 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
3/15
Page 4
M27V402
Table 5. AC Measurement Conditions
High SpeedStandard
Input Rise and Fall Times≤ 10ns≤ 20ns
Input Pulse Voltages0 to3V0.4V to 2.4V
Input and Output Timing Ref. Voltages1.5V0.8V and 2V
Figure 3. AC Testing Input OutputWaveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
(1)
(TA=25°C, f = 1 MHz)
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3kΩ
DEVICE
UNDER
TEST
C
L
CL= 30pF for HighSpeed
CL= 100pF for Standard
CLincludes JIG capacitance
OUT
AI01823B
SymbolParameterTest ConditionMinMaxUnit
V
C
IN
C
OUT
Note: Sampled only, not 100% tested.
Input Capacitance
Output CapacitanceV
=0V
IN
=0V12pF
OUT
6pF
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line control function whichaccommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
4/15
For the most efficient use of these two control
lines, E should bedecodedand used asthe primary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselected memory devicesare intheir lowpower standby
mode and that the output pins are only active
when data is required from a particular memory
device.
Page 5
M27V402
Table 7. Read Mode DC Characteristics
(1)
(TA = 0to 70°C, –20 to 70°C, –20 to 85°C or –40 to 85°C; VCC= 3.3V ± 10%; VPP=VCC)
SymbolParameterTestConditionMinMaxUnit
I
I
I
CC
I
CC1
I
CC2
I
V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage–0.30.8V
IL
(2)
Input High Voltage2
Output Low Voltage
OL
Output High Voltage TTL
OH
Output High Voltage CMOS
2. Maximum DC voltage on Output is V
CC
+0.5V.
E=V
IL
f = 5MHz, V
E>V
0V ≤ V
0V ≤ V
,G=VIL,I
CC
I
OH
I
OH
≤ V
IN
CC
≤ V
OUT
CC
= 0mA,
OUT
= 3.6V
CC
E=V
IH
– 0.2V, VCC= 3.6V
V
PP=VCC
I
= 2.1mA
OL
= –400µA
= –100µAV
2.4V
–0.7V
CC
±10µA
±10µA
20mA
1mA
20µA
10µA
V
+1
CC
0.4V
V
V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs requirecareful decoupling of the
devices. The supply current, ICC, has three segments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edgesof E. The magnitudeof
the transient current peaks is dependent on the
output capacitive and inductive loading of the device.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between V
CC
and VSS. This should be a high frequency capacitor of low inherent inductance and should be
placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be
used between VCCand VSSfor every eight devices. The bulk capacitor should be located near the
power supply connection point.Thepurpose of the
bulk capacitor is to overcome the voltage drop
caused bythe inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27V402 are in the ’1’
state. Data is introduced by selectively programming ’0’s into the desired bit locations. Although
only ’0’s will beprogrammed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a’1’is by die exposure to ultraviolet
light (UV EPROM). The M27V402 is in the programming modewhen VPPinput is at12.75V, Gia
at VIHand E is pulsed to VIL. The data to be programmedis applied to16 bitsin paralleltothe data
output pins.
The levels required for the address and data inputs are TTL. VCCis specified to be 6.25V ±
0.25V.
5/15
Page 6
M27V402
Table 8. Read Mode AC Characteristics
(1)
(TA = 0to 70°C, –20 to 70°C, –20 to 85°C or –40 to 85°C; VCC= 3.3V ± 10%; VPP=VCC)
M27V402
SymbolAltParameterTest Condition
MinMaxMinMaxMinMax
t
AVQV
t
ELQV
t
GLQV
(2)
t
EHQZ
(2)
t
GHQZ
t
AXQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
t
t
t
VPS
t
VCS
t
PW
t
DH
t
OES
t
OE
t
DFP
t
AS
DS
AH
Address Valid to Chip Enable Low2µs
Input Validto Chip Enable Low2µs
VPPHigh to Chip Enable Low
VCCHigh to Chip Enable Low
2µs
2µs
Chip Enable Program Pulse Width95105µs
Chip Enable High to Input Transition2µs
Input Transition to Output Enable Low2µs
Output Enable Low to Output Valid100ns
Output Enable High to Output Hi-Z0130ns
Output Enable High to Address
Transition
0ns
7/15
Page 8
M27V402
Figure 6. Programming and Verify Modes AC Waveforms
A0-A17
tAVEL
Q0-Q15
V
PP
V
CC
E
G
DATA IN
tQVEL
tVPHEL
tVCHEL
tELEH
Figure 7. Programming Flowchart
VCC= 6.25V, VPP= 12.75V
n=0
E = 100µs Pulse
NO
NO
VERIFY
YES
Last
NO
Addr
YES
CHECK ALL WORDS
1st: VCC=6V
2nd: VCC= 4.2V
++ Addr
YES
++n
=25
FAIL
VALID
DATA OUT
tEHQX
tGLQV
tQXGL
PROGRAMVERIFY
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 26.5 seconds. Programming with PRESTO II consists of applying a
sequence of 100µs program pulses to each byte
until a correct verify occurs (see Figure 7). During
programming and verify operation, a MARGIN
MODE circuitis automatically activated in order to
guarantee that each cell is programmed with
enough margin. No overprogram pulse is applied
since the verify in MARGIN MODE at VCCmuch
higher than 3.6V provides necessary margin to
each programmedcell.
Program Inhibit
Programming of multiple M27V402s in parallel
with different datais also easilyaccomplished. Except for E, all like inputs including G of the parallel
M27V402 may be common. A TTL low level pulse
applied to a M27V402’s E input, with VPPat
12.75V, will programthat M27V402. A high levelE
input inhibits the other M27V402s from being programmed.
Program Verify
A verify (read) should be performed on the pro-
AI00726C
grammed bitsto determine that they were correctly programmed. The verifyis accomplished with G
at VIL, E at VIH,VPPat 12.75V and VCCat 6.25V.
tGHQZ
tGHAX
AI00730
8/15
Page 9
M27V402
On-Board Programming
The M27V402 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary codefrom an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically matchthe deviceto be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C ambient temperaturerange that is required when programming theM27V402. To activate the ESmode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V402 with
VPP=VCC=5V. Two identifier bytes may then be
sequenced from thedeviceoutputsby toggling address line A0 from VILto VIH. All other address
lines must be held at VILduring Electronic Signature mode. Byte 0 (A0=VIL) represents the manufacturer code and byte 1 (A0=VIH) the device
identifiercode.FortheSTMicroelectronics
M27V402, these two identifier bytes are given in
Table 4 and canbe read-out onoutputs Q0to Q7.
ERASUREOPERATION (applies to UVEPROM)
The erasure characteristics of the M27V402 is
such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000Å. Itshould benoted thatsunlight
and some type of fluorescent lamps have wavelengths in the 3000-4000Å range. Research
shows that constant exposure to room level fluorescent lighting could erase a typical M27V402 in
about 3years, while it would takeapproximately 1
week to cause erasure when exposed to direct
sunlight. Ifthe M27V402 is to be exposed to these
types of lighting conditions forextended periods of
time, it is suggestedthat opaque labels be put over
the M27V402 windowto prevent unintentional erasure. The recommended erasure procedure for
the M27V402is exposure to shortwave ultraviolet
light which has a wavelength of 2537Å. The integrated dose (i.e. UV intensity xexposure time) for
erasure should be a minimum of 15 W-sec/cm2.
The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with
12000 µW/cm2power rating. The M27V402
should be placed within2.5 cm (1inch) of the lamp
tubes during theerasure.Some lamps haveafilter
on their tubes which should be removed before
erasure.
9/15
Page 10
M27V402
Table 11. OrderingInformation Scheme
Example:M27V402-120 K1 TR
Device Type
Speed
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP40W
B = PDIP40
K = PLCC44
N =TSOP40: 10 x 20mm
Temperature Range
1 =–0 to 70°C
4 =–20 to 70°C
5 =–20 to 85°C
6 =–40 to 85°C
Option
TR =Tape& Reel Packing
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST SalesOffice nearest to you.
10/15
Page 11
M27V402
Table 12. FDIP40W - 40 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
Figure 11. TSOP40 -40 lead Plastic Thin Small Outline, 10 x 20mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is notto scale
LA1α
14/15
Page 15
M27V402
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use ofsuch information norfor any infringement of patents orother rightsof third parties which may result from itsuse. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
1998 STMicroelectronics - AllRights Reserved
All other names are the property of their respective owners.
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15/15
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