Datasheet M27V320 Datasheet (SGS Thomson Microelectronics)

Page 1
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
3.3V ± 10% SUPPLY VOLTAGE in READ
OPERATION
ACCESS TIME: 100ns
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
LOW POWER CONSUMPTION
– Active Current 30mA at 5MHz – Standby Current 60µA
PROGRAMMI NG VOLT AGE: 12V ± 0.2 5 V
PROGRAMMING TIME: 50µs/word
ELECTRONIC SIGNATURE:
– Manufacturer Code 20h – Device Code: 32h
M27V320
SO44 (M) TSOP48 (N)
12 x 20 mm
Figure 1. Logic Diagram
DESCRIPTION
The M27V320 is a low voltage 32 Mbit EPROM of­fered in the OTP range (one time programmable). It is ideally suited for microprocessor systems re­quiring large data or program st orage. It is organ­ised as either 4 MWords of 8 bit or 2 MWords of 16 bit. The pin-out is compatible with the 32 Mbit Mask ROM.
The M27V320 is offered in SO44 and TSOP48 (12 x 20 mm) packages.
A0-A20
GV
PP
V
CC
21
E
M27V320
V
SS
Q15A–1
15
Q0-Q14
BYTE
AI05852
1/15August 2002
Page 2
M27V320
Figure 2. SO Connections
NC A20
A17 A8
A7 A6 A5 A4 A3 A2 A1 A0
V
SS
GV
PP Q0
Q8
Q9
Q10
Q3
Q11
1 2 3 4 5 6 7 8 9 10 11
M27V320
12
E
13 14 15 16 17Q1 18 19 20 21
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 2322
AI05853
A19A18
A9 A10 A11 A12 A13 A14 A15 A16 BYTE V
SS
Q15A–1 Q7 Q14 Q6 Q13 Q5Q2 Q12 Q4 V
CC
Figure 3. TSOP Connections
BYTE
A16 A15 A14 A13 A12
A10
A19
V
SS
A20 A18 A17
1
A9 A8
12 13
A7 A6 A5 A4
A2 A1 A0
24 25
E
M27V320
48
37 36
AI05854
V
SS
V
SS
Q15A–1 Q7 Q14 Q6 Q13A11 Q5 Q12 Q4 V
CC
V
CC
V
SS
Q11 Q3 Q10 Q2 Q9 Q1 Q8A3 Q0 GV
PP
V
SS
V
SS
Table 1. Signal Names
A0-A20 Address Inputs Q0-Q7 Data Outputs Q8-Q14 Data Outputs Q15A–1 Data Output / Address Input E G
V
PP
BYTE Byte-Wide Select V
CC
V
SS
NC Not Connected Internally
2/15
Chip Enable Output Enable / Program Supply
Supply Voltage Ground
DEVICE OPERATION
The operating modes of the M27V320 are listed in the Operating Modes Table. A single power supply is required in the read mode. All inputs are TTL compatib le exc ept for V
and 12V on A9 for the
PP
Electronic Signature.
Read Mode
The M27V32 0 has two organisations, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTE
pin. When BYTE is at V the Word-wide organisation is selected and the Q15A–1 pin is used for Q15 Data Output. When the BY T E
pin is at VIL the Byte-wide organisat ion is selected and the Q15A–1 pin is used for the Ad­dress Input A–1. When the memory is logically re­garded as 16 bit wide, but read in the Byte-wide organisation, then with A–1 at V
the lower 8 bits
IL
of the 16 bit data are selected and with A–1 at V the upper 8 bits of the 16 bit data are selected.
IH
IH
Page 3
M27V320
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A Ambient Operating Temperature
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the ratin g "Operating Temperat ure Range", stresse s above th ose listed i n t he Table "Absolute M aximum Rat i ngs" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indi cated in t he Operating secti ons of t hi s specifi cation i s not impl i ed. Exposure to Absolute Maximum Rating condi­tions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroe lectronics SURE Program an d other relevan t qual­ity docum en ts .
2. Minimum DC vo ltage on Inpu t or Out put is – 0.5V w ith poss ible un dershoot to –2. 0V fo r a peri od les s than 20ns. Ma ximum DC voltage on Output is V
3. Depends on range.
Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V
Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC +2V for a period l ess than 20ns.
CC
(3)
–40 to 125 °C
Table 3. Operating Modes
Mode E
Read Word-wide Read Byte-wide Upper Read Byte-wide Lower Output Disable Program Program Inhibit Standby Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5V.
V V V V
V
Pulse V
IL
V V
V
GV
PP
IL
IL
IL
IL
IH
IH
IL
V
IL
V
IL
V
IL
V
IH
PP
V
PP
X X X Hi-Z Hi-Z Hi-Z
V
IL
BYTE A9 Q15A–1 Q14-Q8 Q7-Q0
V
IH
V
IL
V
IL
X Data Out Data Out Data Out X X
V
IH
V
IL
Hi-Z Data Out Hi-Z Data Out
X X Hi-Z Hi-Z Hi-Z
V
IH
V
IH
V
IH
X Data In Data In Data In X Hi-Z Hi-Z Hi-Z
V
ID
Code Codes Codes
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code Device Code
Note: Output s Q15-Q8 are s et to '0' .
V V
IL
IH
00100000 20h 00110010 32h
3/15
Page 4
M27V320
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 4. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
(1)
(TA = 25 °C, f = 1 MHz)
Input Capacitance Output Capacitance
2.0V
0.8V
AI01822
Figure 5. AC Testing Load Circuit
1.3V
DEVICE UNDER
TEST
CL = 30pF for High Speed CL = 100pF for Standard CL includes JIG capacitance
V
= 0V
IN
V
= 0V
OUT
1N914
3.3k
CL
10 pF 12 pF
OUT
AI01823B
The M27V320 ha s two control functions, both of which must be logically ac tive in order to obtain data at the outputs. In addition the Word-wide or Byte-wide organisation must be selected.
Chip Enable (E used for device selection. Output Enable (G
) is the power control and should be
VPP) is the output control and should be used to gate data to the output pins independent of device selection. Assuming that the addresses are s table, the ad­dress access time (t from E
to output (t
4/15
ELQV
) is equal to the delay
AVQV
). Data is available at the
output after a delay of t of G
VPP, assuming that E has been low and t he addresses have been stable for at least t t
.
GLQV
from the falling e dge
GLQV
AVQV
Standby Mode
The M27V320 has standby mode which reduces the supply current from 50mA to 100µA. The M27V320 is placed in the standby mode by apply­ing a CMOS high signal to the E
input. When in the standby mode, the outputs are in a high imped­ance state, independent of the G
VPP input.
-
Page 5
M27V320
Table 7. Read Mode DC Characteristics
(1)
(TA = 0 to 70°C or –40 to 85°C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
I
CC
I
CC
I
CC
I V
VIH
V V
Note: 1. VCC must be ap pl i e d simultaneously with or before VPP and removed simultane ously or aft er VPP.
Two Line Outp ut C ontrol
Because EPROMs are usually used in larger memory arrays, this product features a 2 line con­trol function which accommodates the use of mul­tiple memory connection. The two line control function allows:
a. the lowest possible memory power dissipation, b. comple te assuranc e that output bus contention
will not occur.
For the most efficient use of these two control lines, E ry device selecting function, while G made a common connectio n to all devices in the array and connected to the READ system control bus. This ensures that all deselect­ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
1
Supply Current (Standby) TTL
2
Supply Current (Standby) CMOS E Program Current
PP
Input Low Voltage –0.6
IL
(2)
Input High Voltage Output Low Voltage
OL
Output High Voltage TTL
OH
2. Maximu m DC voltage on Ou tput is V
CC
+0.5 V .
E
0V V
0V V
= VIL, GVPP = VIL, I
f = 5MHz, V
> VCC – 0.2V, VCC 3.6V 60 µA
I
IN
OUT
E = V
V
= V
PP
I
= 2.1mA
OL
= –400µA
OH
V
V
3.6V
CC
IH
CC
CC
CC
OUT
System Considerations
The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the supplies to the devices. The supply current I has three segments of importance to the system designer: the standby current, the active current and the transient peaks that are produced by the falling and rising edges of E
The magnitude of the transient current peaks is dependent on the capacitive and inductive loading
should be decoded and used as the prima-
VPP should be line from the
of the device outputs. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly se­lected decoupling capacitors . It is recommended that a 0.1µF ceramic capacitor is used o n every device between V high frequency type of low inherent inductance and should be placed as close as possible to the device. In addition, a 4.7µF electro lytic capacitor should be used between V
= 0mA,
CC
±1 µA
±10 µA
30 mA
1mA
10 µA
0.2V
CC
0.7V
CCVCC
2.4 V
+ 0.5
0.4 V
.
and VSS. This sho uld be a
and VSS for every
CC
eight devices. This capacitor should be mounted near the power supply connect ion point. The pur­pose of this capacitor is to overcome the voltage drop caused by the inductive ef fects of PC B trac­es.
V V
CC
5/15
Page 6
M27V320
Table 8. Read Mode AC Characteristics
(1)
(TA = 0 to 70°C or –40 to 85°C; VCC = 3.3V ± 10%)
Symbol Alt Parameter
t
AVQVtACC
t
BHQV
t
ELQV
t
GLQV
(2)
t
BLQZ
(2)
t
EHQZ
(2)
t
GHQZ
t
AXQX
t
BLQX
Note: 1. VCC must be ap pl i e d simultaneously with or before VPP and removed simultane ously or aft er V
2. Sampled only, not 100% tested.
3. Speed obt ai ned with High Speed AC measurement condition s.
Address Valid to Output Valid
t
BYTE High to Output Valid
ST
t
Chip Enable Low to Output Valid
CE
t
Output Enable Low to Output Valid
OE
t
BYTE Low to Output Hi-Z
STD
t
Chip Enable High to Output Hi-Z
DF
Output Enable High to Output
t
DF
Hi-Z Address Transition to Output
t
OH
Transition
t
BYTE Low to Output Transition
OH
Test
Condition
E
= VIL,
GVPP = V
E
= VIL,
GVPP = V G
VPP = V
E
= V
IL
E
= VIL,
GVPP = V G
VPP = V
= V
E
IL
= VIL,
E
GVPP = V
E
= VIL,
GVPP = V
IL
IL
IL
IL
IL
IL
IL
(3)
-100
Min Max Min Max Min Max
100 120 150 ns
100 120 150 ns
100 120 150 ns
45 50 60 ns
45 50 50 ns
045050050ns
045050050ns
555ns
555ns
M27V320
-120 -15 0
PP.
Unit
Figure 6. Word-Wide Read Mode AC Waveforms
A0-A20
E
GV
PP
Q0-Q15
Note: BYTE = VIH.
VALID
tAVQV
tGLQV
tELQV
VALID
tAXQX
tEHQZ
tGHQZ
Hi-Z
AI02207
6/15
Page 7
Figure 7. Byte-Wide Read Mode AC Waveforms
M27V320
A0-A20
E
GV
Q0-Q7
Note: BYTE = VIL.
PP
VALID
tAVQV
tGLQV
tELQV
Figure 8. BYTE Transition AC Waveforms
A0-A20
VALID
tAXQX
tEHQZ
tGHQZ
Hi-Z
AI02218
VALID
A–1
BYTE
Q0-Q7
Q8-Q15
Note: E = VIL; GVPP = VIL.
tAVQV
tBLQZ
tBLQX
VALID
Hi-Z
tAXQX
tBHQV
DATA OUT
DATA OUT
AI02219
7/15
Page 8
M27V320
Table 9. Programming Mode DC Characteristics
(1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12V ± 0.25V)
Symbol Parameter Test Condition Min Max Unit
I
LI
I
CC
I
PP
V
V
V
OL
V
OH
V
Note: 1. VCC must be ap pl i e d simultaneously with or before VPP and removed simultane ously or aft er VPP.
Input Leakage Current Supply Current 50 mA Program Current Input Low Voltage –0.3 0.8 V
IL
Input High Voltage 2.4
IH
Output Low Voltage Output High Voltage TTL A9 Voltage 11.5 12 .5 V
ID
Table 10. MARGIN MODE AC Characteristics
V
I
(1)
VIN V
IL
E
= V
I
= 2.1mA
OL
= –2.5mA
OH
IH
IL
±10 µA
50 mA
V
+ 0.5
CC
0.4 V
3.5 V
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12V ± 0.25V)
Symbol Alt Parameter Test Condition Min Max Unit
t
A9HVPH
t
VPHEL
t
A10HEH
t
A10LEH
t
EXA10X
t
EXVPX
t
VPXA9X
Note: 1. VCC must be ap pl i e d simultaneously with or before VPP and removed simultane ously or aft er VPP.
t t
t
AS10VA10
t
AS10VA10
t
AH10
t t
VA9 High to VPP High
AS9
VPP High to Chip Enable Low
VPS
Chip Enable Transition to V Chip Enable Transition to VPP Transition
VPH
VPP Transition to V
AH9
High to Chip Enable High (Set) Low to Chip Enable High (Reset)
Transition
A10
Transition
A9
s 2µs 1µs 1µs 1µs 2µs 2µs
V
Programming
When delivered, all bits of the M27V320 are in the '1' state. Data is introduced by selectively pro­gramming '0's into the desired bit locations. Al­though only '0's will be programmed, both '1's and '0's can be present in the data word. The M27V320
8/15
is in the programming mode w hen VPP input is at
12.5V, G
VPP is at VIH and E is pulsed to VIL. The data to be programmed is applied to 16 bits in par­allel to the data output pins. The levels required for the address and data inputs are TTL. V
is spec-
CC
ified to be 6.25V ± 0.25V.
Page 9
M27V320
Table 11. Programming Mode AC Characteristics
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12V ± 0.25V)
(1)
Symbol Alt Parameter Test Condition Min Max Unit
t
AVEL
t
QVEL
t
VCHEL
t
VPHEL
t
VPLVPH
t
ELEH
t
EHQX
t
EHVPX
t
VPLEL
t
ELQV
(2)
t
EHQZ
t
EHAX
Note: 1. VCC must be ap pl i e d simultaneously with or before VPP and removed simultane ously or aft er VPP.
2. Sampled only, not 100% tested.
t
t
t
VCS
t
OES
t
PRT
t
PW
t
DH
t
OEH
t t
t
DFP
t
AS
DS
VR
DV
AH
Address Valid to Chip Enable Low 1 µs Input Valid to Chip Enable Low 1 µs VCC High to Chip Enable Low VPP High to Chip Enable Low VPP Rise Time
s 1µs
50 ns Chip Enable Program Pulse Width (Initial) 45 55 µs Chip Enable High to Input Transition 2 µs Chip Enable High to VPP Transition VPP Low to Chip Enable Low
s
s Chip Enable Low to Output Valid 1 µs Chip Enable High to Output Hi-Z 0 130 ns Chip Enable High to Address Transition 0 ns
Figure 9. MARGIN MODE AC Waveforms
V
CC
A8
A9
tA9HVPH tVPXA9X
GV
PP
E
A10 Set
A10 Reset
tVPHEL
tA10HEH
tA10LEH
tEXVPX
tEXA10X
AI00736B
Note: A8 High lev el = 5V; A9 High level = 12V.
9/15
Page 10
M27V320
Figure 10. Programming and Verify Modes AC Waveforms
A0-A20
tAVEL
Q0-Q15
tQVEL
V
CC
tVCHEL
GV
PP
tVPHEL
E
Note: BYTE = VIH; GVPP High level = 12V.
Figure 11. Programming Flowchart
VCC = 6.25V, VPP = 12V
SET MARGIN MODE
n = 0
E = 50µs Pulse
NO
NO
VERIFY
YES
Last
NO
Addr
YES
RESET MARGIN MODE
CHECK ALL WORDS
BYTE = V 1st: VCC = 5V 2nd: VCC = 3V
IH
++ Addr
YES
++n
= 25
FAIL
VALID
DATA IN DATA OUT
tEHQX
tEHVPX tELQV
tVPLEL
tELEH
PROGRAM VERIFY
PRESTO III P rog ra m mi ng Algorithm
The PRESTO III Programming Algorithm allows the whole array to be program ed with a guaran­teed margin in a typical time of 100 seconds. Pro­gramming with PRESTO I II con sists of a pplying a sequence of 50µs program pulses t o each word until a correct verify occurs (see Figure 11). During programing and verify operation a MARGIN MODE circuit must be activated to guarantee that each cell is programed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell.
Program Inhibit
Programming of multiple M27V320s in parallel with different data is also easily accomplished. Ex­cept for E
, all like inputs including GVPP of the par­allel M27V320 may b e common. A TTL l ow level pulse applied to a M27V320's E 12V, will program that M27V320. A high level E put inhibits the ot her M27V320s from b eing pro­grammed.
Program Verify
A verify (read) should be performed on the pro­grammed bits to determine that they were correct­ly programmed. The verify is accomplished with
VPP at VIL. Data should be verified with t
AI05820
G ter the falling edge of E
.
tEHAX
tEHQZ
AI02205
input and VPP at
ELQV
in-
af-
10/15
Page 11
M27V320
Electronic Signature
The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufac turer and type. This m ode is intended for use by program ming equipme nt to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C am­bient temperature range that is required when pro­gramming the M27V320. To activate the ES mode, the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V320, with V
= V
PP
= 5V. Two identifier bytes may th en be
CC
sequenced from the device outputs by toggling ad­dress line A0 from V lines must be held at V
to VIH. All other address
IL
during Electronic Signa-
IL
ture mode. Byte 0 (A0 = V
code and byte 1 (A0 = V
) represents the manufacturer
IL
) the device identifier
IH
code. For the STMicroelectronics M27V320, these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0.
11/15
Page 12
M27V320
Table 12. Ordering Information Scheme
Example: M27V320 -100 M 1
Device Type
M27
Supply Voltage
V = 3.3V ± 10%
Device Function
320 = 32 Mbit (4Mb x 8 or 2Mb x 16)
Speed
(1)
= 100 ns
-100
-120 = 120 ns
-150 = 150 ns
Package
M = SO44 N = TSOP48: 12 x 20 mm
Temperature Rang e
1 = 0 to 70 °C 6 = –40 to 85 °C
Note: 1. High Speed, see AC Char acterist ics section fo r f urther information .
For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this de­vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 13. Revision History
Date Version Revision Details
December 2001 1.0 First Issue 26-Aug-2002 1.1 Document status moved to Data Sheet
12/15
Page 13
M27V320
Table 14. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechan ical Data
Symbol
Typ Min Ma x Typ Min Max
A 2.80 0.1102 A1 0.10 0.0039 A2 2.30 2.20 2.4 0 0.0906 0.0866 0.0945
b 0.40 0.35 0.50 0.0157 0.0138 0.0197
C 0.15 0.10 0.20 0.0059 0.0039 0.0079 CP 0.08 0.0030
D 28.20 28.00 28.40 1.1102 1.1024 1.1181
e 1.27 0.0500
E 1 3.30 13.20 13.5 0 0.5236 0.5197 0.5315 EH 16.00 15.75 16.25 0.6299 0.6201 0.6398
L 0.80 0.0315 α N44 44
millimeters inches
Figure 12. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline
A2
A
C
b
e
CP
D
N
E
EH
1
Drawing is not to scale.
LA1 α
SO-d
13/15
Page 14
M27V320
Table 15. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Mechani cal Data
Symb
Typ Min Max Typ Min Max
A 1.20 0.047
A1 0.05 0.15 0.002 0.006 A2 0.95 1.05 0.037 0.041
B 0.17 0.27 0.007 0.011 C 0.10 0.21 0.004 0.008
CP 0.10 0.004
D 19.80 20.20 0.780 0.795
D1 18.30 18.50 0.720 0.728
E 11.90 12.10 0.469 0 .476
e 0.50 - - 0.020 - -
L 0.50 0.7 0 0.020 0.028 α N48 48
mm inc hes
Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Outline
A2
1 N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1 α
14/15
Page 15
M27V320
Information furnished is believed to be ac curate and reliable. However, STMicroelectro ni cs assumes no resp onsibility for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any patent or pat ent righ ts of STMicroe l ectronics . Specificati ons menti oned in thi s publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as cri tical comp onents in life support devi ces or systems without express writt en approval of STMicroel ectronics.
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