Datasheet M27C4001 Datasheet (SGS Thomson Microelectronics)

Page 1
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
FAST ACCESS TIME: 35ns
LOW POWERCONSUMPTION:
– Active Current 30mA at 5MHz – Standby Current 100µA
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
PROGRAMMING TIME: 100µs/byte (typical)
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h – Device Code: 41h
DESCRIPTION
The M27C4001 is a 4 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro­processor systems requiring large programs and is organised as 524,288 by 8 bits.
The FDIP32W (window ceramic frit-seal package) and LCCC32W (leadless chip carrier package) have a transparent lid which allow the user to ex­pose thechipto ultraviolet light to erase the bit pat­tern. A new pattern can then be written to the device by following the programming procedure.
For applications wherethe contentis programmed only one time and erasure is not required, the M27C4001 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20mm) packages.
Table 1. Signal Names
M27C4001
32
1
FDIP32W (F)
LCCC32W (L)
PLCC32 (C)
Figure 1. Logic Diagram
V
19
A0-A18 Q0-Q7
CC
32
V
PP
1
PDIP32 (B)
TSOP32 (N)
8 x 20 mm
8
A0-A18 Address Inputs Q0-Q7 Data Outputs E Chip Enable G Output Enable V
PP
V
CC
V
SS
Program Supply Supply Voltage Ground
E
G
M27C4001
V
SS
AI00721B
1/16July 1998
Page 2
M27C4001
Figure 2A. DIP Pin Connections
V
PP
A15 A12
A7 A6 A5 A4 A3 A2 A1 A0
Q0
Q2 SS
1 2 3 4 5 6 7 8
M27C4001
9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
AI00722
V
CC
A18A16 A17 A14 A13 A8 A9 A11 G A10 E Q7 Q6 Q5Q1 Q4 Q3V
Figure 2B. LCC Pin Connections
CC
VPPV
32
Q3
Q4
A18
Q5
A7 A6 A5 A4 A3 A2 A1 A0
Q0
9
A12
A15
M27C4001
Q1
Q2
A16
1
17
SS
V
A17
25
Q6
A14 A13 A8 A9 A11 G A10 E Q7
AI00723
Figure 2C. TSOP Pin Connections
A11 G
A9
A8 A13 A14 A17 A18
V
CC
V
PP
A16 A15 A12
A7
A6
A5
A4 A3
1
M27C4001
8
(Normal)
9
16 17
32
25 24
AI01155B
A10 E Q7 Q6 Q5 Q4 Q3 V
SS
Q2 Q1 Q0 A0 A1 A2
DEVICE OPERATION
The operating modes of the M27C4001 are listed in the Operating Modes table. A single power sup­ply is required in the read mode. All inputs are TTL levels exceptfor VPPand 12V on A9 for Electronic Signature.
Read Mode
The M27C4001 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable(G) is the output controland should be used to gate data to the output pins, indepen­dent of device selection. Assuming that the ad­dresses are stable, the address access time (t
) is equal to the delay from E to output
AVQV
(t
). Datais available at the output after a delay
ELQV
of t
from the falling edge of G, assuming that
GLQV
E has been low and the addresses have been sta­ble for at least t
AVQV-tGLQV
.
Standby Mode
The M27C4001 hasa standby mode which reduc­es the supply current from 30mA to 100µA. The M27C4001 is placed in the standby mode by ap­plying a CMOS high signal to the E input.When in the standby mode, theoutputs are in a high imped­ance state, independent of the G input.
2/16
Page 3
M27C4001
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listedin the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure toAbsolute Maximum Rating condi­tions for extended periods may affect device reliability. Referalso to the STMicroelectronics SURE Program andother relevant qual­ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Output is V
3. Depends on range.
Table 3. Operating Modes
Ambient Operating Temperature Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V Program Supply Voltage –2 to 14 V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(1)
Mode E G A9
Read Output Disable V Program Verify V Program Inhibit Standby Electronic Signature
Note: 1. X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
IL
V
Pulse V
IL
IH
V
IH
V
IH
V
IL
(3)
V
IL
V
IH
IH
V
IL
V
IH
X XV X XVPPData Out X
XX
V
IL
V
ID
–40 to 125 °C
V
pp
V
or V
CC
SS
or V
CC
SS
V
PP
V
PP
V
or V
CC
SS
V
CC
Q0 - Q7
Data Out
Hi-Z
Data In
Hi-Z Hi-Z
Codes
Table 4. Electronic Signature
Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code Electronic Signature
Two Line Output Control
Because EPROMs are usually used in larger memory arrays, this product features a 2 line con­trol function which accommodates the use of mul­tiple memory connection. The two line control function allows:
a. the lowest possible memory power dissipation, b. complete assurance that output bus contention
will not occur.
V
IL
V
IH
00100000 20h 01000001 41h
For the most efficient use of these two control lines, E should be decodedand used asthe prima­ry device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselect­ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.
3/16
Page 4
M27C4001
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns Input Pulse Voltages 0 to 3V 0.4 to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8 and 2V
Figure 3. Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
(1)
(TA=25°C, f = 1 MHz)
Input Capacitance Output Capacitance V
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3k
DEVICE UNDER
TEST
C
L
CL= 30pF for High Speed CL= 100pF for Standard CLincludes JIG capacitance
V
=0V
IN
=0V 12 pF
OUT
6pF
OUT
AI01823B
System Considerations
The power switching characteristics of Advanced CMOS EPROMs requirecareful decoupling of the devices. The supply current, ICC, has three seg­ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edgesof E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output.
The associated transient voltage peaks can be suppressed by complying with the two line output
4/16
control and by properly selected decoupling ca­pacitors. It is recommended that a 0.1µF ceramic capacitor be used on every device between V
CC
and VSS. This should be a high frequency capaci­tor of low inherent inductance and should be placed as close to the device as possible. In addi­tion, a 4.7µF bulk electrolytic capacitor should be used between VCCand VSSfor every eight devic­es. The bulkcapacitor should be located near the power supply connection point. Thepurposeof the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.
Page 5
M27C4001
Table 7. Read Mode DC Characteristics
(1)
(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
LO
I
CC
I
CC1
I
CC2
I
PP
V
V
IH
V
Input Leakage Current
LI
Output Leakage Current
Supply Current
Supply Current (Standby) TTL Supply Current (Standby) CMOS E > VCC– 0.2V 100 µA Program Current Input Low Voltage –0.3 0.8 V
IL
(2)
Input High Voltage 2 VCC+1 V Output Low Voltage IOL= 2.1mA 0.4 V
OL
Output High Voltage TTL
V
OH
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Maximum DC voltage on Output is V
Output High Voltage CMOS I
+0.5V.
CC
0V V
0V V
OUT
E=V
IL
= 0mA, f = 5MHz
I
OUT
E=V
V
PP=VCC
I
= –400µA
OH
= –100µAV
OH
V
IN
CC
V
CC
,G=VIL,
IH
±10 µA ±10 µA
30 mA
1mA
10 µA
2.4 V – 0.7 V
CC
Table 8A. Read Mode AC Characteristics
(1)
(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)
M24C4001
Symbol Alt Parameter Test Condition
Address Valid to
(2)
(2)
t
ACC
Output Valid Chip Enable Low to
t
CE
Output Valid Output Enable Low to
t
OE
Output Valid Chip Enable High to
t
DF
Output Hi-Z Output Enable High to
t
DF
Output Hi-Z Address Transition to
t
OH
Output Transition
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
E=V
E=V
,G=V
IL
G=V
E=V
G=V
E=V
,G=V
IL
IL
IL
IL
IL
IL
IL
-35
(3)
-45
Min Max Min Max Min Max
35 45 55 ns
35 45 55 ns
20 25 30 ns
030030030ns
030030030ns
000ns
PP
(3)
-55
(3)
Unit
5/16
Page 6
M27C4001
Table 8B. Read Mode AC Characteristics
(1)
(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)
M27C4001
Symbol Alt Parameter Test Condition
Min Max Min Max Min Max
t
AVQV
t
ELQV
t
GLQV
(2)
t
EHQZ
(2)
t
GHQZ
t
AXQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Address Valid to
t
ACC
Output Valid Chip Enable Low to
t
CE
Output Valid Output Enable Low to
t
OE
Output Valid Chip Enable High to
t
DF
Output Hi-Z Output Enable High to
t
DF
Output Hi-Z Address Transition to
t
OH
Output Transition
E=V
E=V
,G=V
IL
G=V
E=V
G=V
E=V
,G=V
IL
IL
IL
IL
IL
IL
IL
70 80 100 ns
70 80 100 ns
35 40 50 ns
0 30 0 30 0 30 ns
0 30 0 30 0 30 ns
000ns
Unit-70 -80/-90 -10/-12/-15
Figure 5. Read Mode AC Waveforms
A0-A18
E
G
Q0-Q7
VALID
tAVQV
tGLQV
tELQV
Programming
When delivered (and after each erasure for UV EPROM), all bits of the M27C4001 are in the ’1’ state. Data is introduced by selectively program­ming ’0’s into the desired bit locations. Although only ’0’s will be programmed, both ’1’sand ’0’s can be present in the data word. The only way to
VALID
tAXQX
tEHQZ
tGHQZ
Hi-Z
AI00724B
change a ’0’ to a ’1’ is by dieexposition to ultravio­let light (UV EPROM). The M27C4001 is in the programming mode when VPPinput is at 12.75V, GisatVIHand E is pulsed to VIL. The data to be programmed is applied to 8 bits in parallel to the data output pins. The levels required for the ad­dress and data inputs are TTL. VCCis specified to be 6.25V ± 0.25V.
6/16
Page 7
M27C4001
Table 9. Programming Mode DC Characteristics
(1)
(TA=25°C; VCC= 6.25V ± 0.25V; VPP= 12.75V ± 0.25V)
Symbol Parameter Test Conditio n Min Max Unit
I
I
CC
I
PP
V V
V
V
OH
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Supply Current 50 mA Program Current Input Low Voltage –0.3 0.8 V
IL
Input High Voltage 2 VCC+ 0.5 V
IH
Output Low Voltage
OL
Output High Voltage TTL IOH= –400µA 2.4 V A9 Voltage 11.5 12.5 V
ID
Table 10. ProgrammingMode AC Characteristics
0 V
I
OL
(1)
V
IN
E=V
= 2.1mA
CC
IL
±10 µA
50 mA
0.4 V
(TA=25°C; VCC= 6.25V ± 0.25V; VPP= 12.75V ± 0.25V)
Symbol Alt Parameter Test Condition Min Max Unit
t t
t
t
t
t
t
t
Address Validto Chip Enable Low 2 µs
AS
t
Input Valid to Chip Enable Low 2 µs
DS
VPPHigh to Chip Enable Low
VPS
VCCHigh to Chip Enable Low
VCS
Chip Enable Program Pulse Width 95 105 µs
PW
Chip Enable High to Input
DH
Transition Input Transionto Output Enable
OES
Low Output Enable Low to Output Valid 100 ns
OE
Output Enable High to Output Hi-Z 0 130 ns
DFP
Output Enable High to Address
t
AH
Transition
2 µs 2 µs
2 µs
2 µs
0ns
t
AVEL
t
QVEL
t
VPHEL
t
VCHEL
t
ELEH
t
EHQX
t
QXGL
t
GLQV
t
GHQZ
t
GHAX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
7/16
Page 8
M27C4001
Figure 6. Programmingand Verify Modes AC Waveforms
A0-A18
tAVPL
Q0-Q7
tQVEL
V
PP
tVPHEL
V
CC
tVCHEL
E
tELEH
G
Figure 7. ProgrammingFlowchart
VCC= 6.25V, VPP= 12.75V
n=0
E = 100µsPulse
NO
NO
VERIFY
YES
Last
NO
Addr
YES
CHECK ALL BYTES
1st: VCC=6V
2nd: VCC= 4.2V
++ Addr
YES
++n
=25
FAIL
VALID
DATA IN DATA OUT
tEHQX
tGLQV
tQXGL
PROGRAM VERIFY
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the whole array to be programmed with a guaranteed margin, in a typical time of 52.5 seconds. Pro­gramming with PRESTO II consists of applying a sequence of 100µs program pulses to each byte until a correct verify occurs (see Figure 7). During programming and verify operation, a MARGIN MODE circuit is automatically activatedin order to guarantee that each cell is programmed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell.
Program Inhibit
Programming of multiple M27C4001s in parallel with different data is also easily accomplished. Ex­cept for E, all likeinputs including G of the parallel M27C4001 may be common. A TTL low level pulse applied to a M27C4001’s E input, with V at 12.75V, will program that M27C4001. A high level E input inhibits the other M27C4001s from being programmed.
Program Verify
AI00760B
A verify (read) should be performed on the pro­grammed bits to determinethat they were correct­ly programmed. The verify is accomplished with G at VIL, E at VIH,VPPat 12.75V and VCCat 6.25V.
tGHQZ
tGHAX
AI00725
PP
8/16
Page 9
M27C4001
On-Board Programming
The M27C4001 can be directlyprogrammed in the application circuit. See the relevant Application Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the reading out of a binary code froman EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C am­bient temperaturerange that is required when pro­gramming the M27C4001. To activate the ES mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the M27C4001 with VPP=VCC=5V. Two identifier bytes maythen be sequencedfrom the deviceout­puts bytoggling address lineA0from VILtoVIH. All other address lines must be held at VILduring Electronic Signature mode. Byte 0 (A0=VIL) repre­sents the manufacturer code and byte 1 (A0=VIH) the device identifier code.
For the STMicroelectronics M27C4001, thesetwo identifier bytes are given in Table 4 and can be read-out on outputs Q0 to Q7.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C4001 are such that erasure begins when the cells are ex­posed to light with wavelengths shorter than ap­proximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Data shows that constant exposure to room level fluo­rescent lighting could erase atypical M27C4001in about 3 years, while it would takeapproximately 1 week to cause erasure when exposed to direct sunlight. If the M27C4001 is to be exposed to these types of lighting conditions for extended pe­riods of time, it is suggested that opaque labels be put over the M27C4001 window to prevent unin­tentional erasure.The recommended erasure pro­cedure for the M27C4001 is exposure to short wave ultraviolet light which has wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dos­age is approximately 15 to 20 minutes using an ul­traviolet lamp with 12000 µW/cm2power rating. The M27C4001 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.
9/16
Page 10
M27C4001
Table 11. Ordering Information Scheme
Example: M27C4001 -45 X C 1 TR
Device Type
Operating Voltage
C=5V
Speed
(1)
=35ns
-35
(1)
-45
=45ns
(1)
-55
=55ns
-70 = 70 ns
-80 = 80 ns
-90 = 90 ns
-10 = 100 ns
-12 = 120 ns
-15 = 150 ns
Tolerance
V
CC
blank = ± 10% X=±5%
Package
F = FDIP32W L = LCCC32W B = PDIP32 C = PLCC32 N = TSOP32: 8 x 20mm
Temperature Range
1 = –0 to 70 °C 6 = –40 to 85 °C
Option
X = Additional Burn-in TR =Tape& Reel Packing
Note: 1. High Speed, see AC Characteristics section for further information.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de­vice, please contact the ST Sales Office nearest to you.
10/16
Page 11
M27C4001
Table 12. FDIP32W- 32 pin Ceramic Frit-seal DIP with window, Package Mechanical Data
Symb
A 5.72 0.225 A1 0.51 1.40 0.020 0.055 A2 3.91 4.57 0.154 0.180 A3 3.89 4.50 0.153 0.177
B 0.41 0.56 0.016 0.022 B1 1.45 0.057
C 0.23 0.30 0.009 0.012 D 41.73 42.04 1.643 1.655
D2 38.10 1.500
E 15.24 0.600 – E1 13.06 13.36 0.514 0.526
e 2.54 0.100 – eA 14.99 0.590 – eB 16.18 18.03 0.637 0.710
L 3.18 0.125
S 1.52 2.49 0.060 0.098
Ø 7.11 0.280
α 4° 11° 4° 11°
N32 32
Typ Min Max Typ Min Max
mm inches
Figure 8. FDIP32W - 32 pin Ceramic Frit-seal DIP with window, Package Outline
A2
B1 B e
A3A1A
L
α
C
eA
D2
eB
D
S
N
1
Drawing is not to scale.
E1 E
FDIPW-a
11/16
Page 12
M27C4001
Table 13. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Mechanical Data
Symb
Typ Min Max Typ Min Max
A 5.08 0.200 A1 0.38 0.015 – A2 3.56 4.06 0.140 0.160
B 0.38 0.51 0.015 0.020 B1 1.52 0.060
C 0.20 0.30 0.008 0.012 D 41.78 42.04 1.645 1.655
D2 38.10 1.500
E 15.24 0.600 – E1 13.59 13.84 0.535 0.545
e1 2.54 0.100 – eA 15.24 0.600 – eB 15.24 17.78 0.600 0.700
L 3.18 3.43 0.125 0.135 S 1.78 2.03 0.070 0.080 α 0° 10° 0° 10°
N32 32
mm inches
Figure 9. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Outline
A2A1A
L
B1 B e1
D2
α
eA
eB
D
S
N
E1 E
1
Drawing is not to scale.
C
PDIP
12/16
Page 13
Table 14. LCCC32W - 32 lead Leadless Ceramic Chip Carrier rectangular window, Package Mechanical Data
mm inches
Symb
Typ Min Max Typ Min Max
A 2.80 0.110 B 0.51 0.71 0.020 0.028
D 11.53 11.63 0.442 0.458
E 13.72 14.22 0.540 0.560
e 1.27 0.050 – e1 0.39 0.015 – e2 7.62 0.300 – e3 10.16 0.400
h 1.02 0.040
j 0.51 0.020
L 1.14 1.40 0.045 0.055 L1 1.96 2.36 0.077 0.093
M27C4001
K 10.50 10.80 0.413 0.425
K1 8.03 8.23 0.316 0.324
N32 32
Figure 10.LCCC32W - 32 lead Leadless Ceramic Chip Carrier rectangular window, PackageOutline
e2
o
D
e
N
1
jx45
L1
EK
e3
e1
B
K1
A
o
Lhx45
LCCCW-a
Drawing is not to scale.
13/16
Page 14
M27C4001
Table 15. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Mechanical Data
Symb
A 2.54 3.56 0.100 0.140
A1 1.52 2.41 0.060 0.095 A2 0.38 0.015
B 0.33 0.53 0.013 0.021
B1 0.66 0.81 0.026 0.032
D 12.32 12.57 0.485 0.495 D1 11.35 11.56 0.447 0.455 D2 9.91 10.92 0.390 0.430
E 14.86 15.11 0.585 0.595 E1 13.89 14.10 0.547 0.555 E2 12.45 13.46 0.490 0.530
e 1.27 0.050
F 0.00 0.25 0.000 0.010
R 0.89 0.035
N32 32 Nd 7 7 Ne 9 9
CP 0.10 0.004
Typ Min Max Typ Min Max
mm inches
Figure 11. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Outline
D
D1
1N
Ne E1 E
F
D2/E2
A2
B
0.51 (.020)
1.14 (.045)
PLCC
Drawing is not to scale.
Nd
R
CP
A
A1
B1
e
14/16
Page 15
M27C4001
Table 16. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20mm, Package Mechanical Data
Symb
Typ Min Max Typ Min Max
A 1.20 0.047 A1 0.05 0.17 0.002 0.006 A2 0.95 1.05 0.037 0.041
B 0.15 0.27 0.006 0.011
C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795
D1 18.30 18.50 0.720 0.728
E 7.90 8.10 0.311 0.319
e 0.50 0.020
L 0.50 0.70 0.020 0.028
α 0° 5° 0° 5°
N32 32
CP 0.10 0.004
mm inches
Figure 12. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20mm, Package Outline
A2
1N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Drawing is not to scale.
LA1 α
15/16
Page 16
M27C4001
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