Datasheet M2698Z#250, M2698Z#350 Datasheet (Westcode Semiconductors)

Date:- 12 Jul, 2004

WESTCODE

An IXYS Company

Fast Recovery Diode

Type M2698Z#250 to M2698Z#350

Old Type No.: SM25-36CXC964

Absolute Maximum Ratings

VOLTAGE RATINGS

V

RRM

V

RSM

I

F(AV)M

I

F(AV)M

I

F(AV)M

I

F(RMS)

I

F(d.c.)

I

FSM

I

FSM2

I2tI
I2t
T

j op

T

stg

Repetitive peak reverse voltage, (note 1) 2500-3500 V
Non-repetitive peak reverse voltage, (note 1) 2600-3600 V

OTHER RATINGS

Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T
Nominal RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=60% V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

2

t capacity for fusing tp=10ms, VRM=60% V
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range -40 to +150 °C
Storage temperature range -40 to +150 °C

sink

=100°C, (note 3) 1165 A

sink

=25°C, (note 4) 4545 A

=55°C, (note 2) 2698 A

sink

=100°C, (note 2) 1825 A

sink

=25°C, (note 2) 4979 A

sink

, (note 5) 27.8 kA

RRM

, (note 5) 3.86×10

RRM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

30.6 kA

6

4.68×10

6

UNITS

UNITS

A2s
A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 150°C T

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 1 of 11 July, 2004

initial.

j

below 25°C.

j

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

V
r

V

I
Q
Q
I
t

R

FM

T0

T

FRM

RRM

rr

ra

rm

rr

thJK

Maximum peak forward voltage

--3.0I

--2.9I
Threshold voltage - - 1.00 V
Slope resistance - - 0.33

Maximum forward recovery voltage

- - 20 di/dt = 1000A/µs, Tj=25°C V

- - 45 di/dt = 1000A/µs V
Peak reverse current - - 150 Rated V
Recovered charge - 1200 - µC
Recovered charge, 50% Chord - 620 800 µC
Reverse recovery current - 200 - A
Reverse recovery time, 50% Chord - 6.2 -

Thermal resistance, junction to heatsink

- - 0.011 Double side cooled

- - 0.022 Single side cooled

=6000A

FM

=5400A

FM

RRM

I

=1000A, tp=1000µs, di/dt=60A/µs,

FM

V

=50V, 50% Chord.

r

V

mΩ

mA

µs

K/W

F Mounting force 37 - 47 kN

W

Weight

t

- 1.7 - Outline option ZC, ZT and ZY

- 1.2 - Outline option ZD and ZV

kg

Notes:-

1) Unless otherwise indicated T

=150°C.

j

Notes on rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 2 of 11 July, 2004

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table Voltage Grade V

25 2500 2600 1600
26 2600 2700 1650
28 2800 2900 1700
30 3000 3100 1750
32 3200 3300 1800
34 3400 3500 1850
35 3500 3600 1900

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:

where IF = instantaneous forward current.

RRM

(V)

V

RSM

(V)

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

V

dc

R

(V)

4.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.

(ii) Qrr is based on a 150µs integration time.

I.e.

(iii)

s

µ

150

=

∫

0

FactorK =

dtiQ

.

rrrr

t

1

t

2

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 3 of 11 July, 2004

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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:

[]

Where k = 0.2314 (°C/W)/s

E

= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.

R

= d.c. thermal resistance (°C/W)

th(JK

The total dissipation is now given by:

fEWW

originaltot

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

)()(

⋅+=

RfkETT ⋅+⋅−=

)()( JKthMAXjSINK

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:

2

R

Where: Vr= Commutating source voltage

6.0 Snubber Components When selecting snubber components, care m ust be taken not to us e excessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber dis charge current. If required, please cons ult
the factory for assistance.

V

⋅= 4

C

R = Snubber resistance

r

di

C

⋅

dt

S

= Snubber capacitance

S

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 4 of 11 July, 2004

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7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

I

=

AV

0

T

0

2

Where VT0 = 1.0V, rT = 0.33mΩ

4

2

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTT

ff = form factor (normally unity for fast diode applications)

∆

T

W

The forward characteristic I
(i) the well established V

((iiii))

=

AV

a set of constants A, B, C, and D forming the coefficients of the representative equation for V

R

th

TTT

−=∆

)(

7.2 Calculation of V

terms of I

given below:

F

KMAXj

using ABCD Coefficients

F

Vs VF, on page 6 is represented in two ways;

F

and rT tangent used for rating purposes and

T0

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

in

F

The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
which is limited to that plotted.

A
B
C
D

8.0 Frequency Ratings The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maxim um ratings

shown on page 1.

9.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

agree with the true device characteristic over a current range,

F

25°C Coefficients 150°C Coefficients

1.081517086 0.918605586

0.113765 0.07445095

8.42315×10

4.433191×10

-5

-3

6.88963×10

0.0131724

-5

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 5 of 11 July, 2004

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Curves

Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage

100

(V)

FRM

M2698Z#250-350

Issue 1

150°C

25°C

(A)

FM

10000

M2698Z#250-350

Issue 1

150°C25°C

1000

Instantaneous forward current - I

100

0.511.522.533.5

Maximum instantaneous forward voltage - V

Figure 3 - Recovered charge, Q

10000

M2698Z#250-350

Issue 1

Tj = 150°C

(µC)

rr

10

Maximum forward recovery voltage - V

1

(V)

FM

rr

4000A
3000A
2000A
1000A

Figure 4 - Recovered charge, Qra (50% chord)

10 100 1000 10000

Rate of rise of forward current - di/dt (A/µs)

10000

M2698Z#250-350

Issue 1

Tj = 150°C

4000A
3000A
2000A
1000A

, 50% chord (µC)

1000

Total recovered charge - Q

100

1 10 100 1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 6 of 11 July, 2004

ra

1000

Recovered charge - Q

100

1 10 100 1000

Commutation rate - di/dt (A/µs)

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Figure 5 - Maximum reverse current, I

1000

M2698Z#250-350

Issue 1

Tj = 150°C

(A)

rm

100

Reverse recovery current - I

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

rm

4000A
3000A
2000A
1000A

Figure 6 - Maximum recovery time, trr (50% chord)

100

M2698Z#250-350

Issue 1

Tj = 150°C

, 50% chord (µs)

rr

10

4000A
3000A
2000A

Recovery time - t

1

1 10 100 1000

Commutation rate - di/dt (A/µs)

1000A

Figure 7 – Reverse recovery energy per pulse Figure 8 - Sine wave energy per pulse

100

M2698Z#250-350

Tj = 150°C
VR = 67%V
Cs = 0.25µF

(J)

r

10

Energy per pulse - E

1

1 10 100 1000

Issue 1

RRM

3000A

1500A

750A

375A

Commutation rate - di/dt (A/µs)

1.00E+03

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

M2698Z#250-350

Issue 1

Tj = 150°C

6000A
4000A
3000A
2000A
1000A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 7 of 11 July, 2004

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Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1kA

2kA

3kA

4kA

6kA

M2698Z#250-350

100% Duty Cycle

Issue 1

TK = 55°C

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1kA

2kA

3kA

4kA

6kA

M2698Z#250-350

100% Duty Cycle

Issue 1

TK = 85°C

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 11 - Square wave energy per pulse Figure 12 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

Energy per pulse (J)

M2698Z#250-350

di/dt =100A/µs
Tj = 150°C

Issue 1

6kA

4kA

3kA

1.00E+03

1.00E+02

1.00E+01

Energy per pulse (J)

M2698Z#250-350

di/dt =500A/µs
Tj = 150°C

6000A
4000A
3000A
2000A
1000A

Issue 1

1kA

2kA

Pulse width (s)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 8 of 11 July, 2004

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Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

1kA

2kA

M2698Z#250-350

Issue 1

di/dt =100A/µs

TK=55°C

100% Duty Cycle

1.00E+05

1.00E+04

1kA

2kA

M2698Z#250-350

di/dt =500A/µs

100% Duty Cycle

Issue 1

TK = 55°C

3kA

4kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

6kA

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

3kA

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency vs. pulse width Figure 16 - Square wave frequency vs. pulse width

1.00E+05

1kA

M2698Z#250-350

Issue 1

di/dt =100A/µs

TK = 85°C

1.00E+05
M2698Z#250-350

Issue 1

di/dt =500A/µs

TK = 85°C

1.00E+04
100% Duty Cycle

2kA

3kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 9 of 11 July, 2004

4kA

6kA

Pulse width (s)

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1kA

100% Duty Cycle

2kA

3kA

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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Figure 17 – Maximum surge and I2t ratings

100000

(A)

FSM

10000

Total peak half sine surge current - I

1000

I2t: V

RRM

I2t: VR=60% V

I

: V

FSM

RRM

I

: VR=60% V

FSM

Tj (initial) = 150°C

M2698Z#250-350

Issue 1

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

≤

≤

10V

RRM

10V

RRM

1.00E+08

1.00E+07

1.00E+06

s)

2

t (A

2

Maximum I

Figure 18 – Transient thermal impedance

0.1

M2698Z#250-350

Issue 1

0.01

0.001

Thermal impedance (K/W)

0.0001

0.0001 0.001 0.01 0.1 1 10 100

SSC 0.022K/W

DSC 0.011K/W

Time (s)

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 10 of 11 July, 2004

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Outline Drawing & Ordering Information

100A310

Outline options ZC, ZT and ZY Outline options ZD and ZV

ORDERING INFORMATION (Please quote 10 digit code as bel ow)



 

M2698

Fixed

Type Code

Typical order code: M2698ZC340 – 3400V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with
the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to

the conditions and limits contained in this report.

ZC = 37.7mm Clamp hei ght , ZT = 37.7mm clamp height, rupture rated capsule,

ZY = 37.7mm Clam p hei ght, extended rupture rated capsule

ZD = 26mm Clamp height , ZV = 26mm clamp hei ght, rupture rated capsule

, 37.7mm clamp height capsule.

RRM

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An IXYS Company



Outline code

www.westcode.com

www.ixys.com





Voltage code

/100

V

DRM

25-35

Westcode Semiconductors Ltd

Langley Park Way, Langl ey Park,

Chippenham, Wi l tshire, SN15 1GE.

E-mail: WSL.sales@westcode,com

E-mail: [e-mail]

Tel: [phone]

Fax: [phone]

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

© Westcode Semiconductors Ltd.

0

Fixed code

Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1 Page 11 of 11 July, 2004