Datasheet M24C64-WMW6T, M24C64-WMW6, M24C64-WMN6T, M24C64-WMN6, M24C64-W Datasheet (SGS Thomson Microelectronics)

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Page 1
1/19December 1999
M24C64 M24C32
64/32 Kbit Serial I²C Bus EEPROM
Compat ible with I
2
C Extended Addressing
Two Wire I
C Serial Interface
Supports 400 kHz Protocol
Single Supply Voltage:
– 4.5V to 5.5V for M24Cxx – 2.5V to 5.5V for M24Cxx-W – 1.8V to 3.6V for M24Cxx-R
Hardware Write Control
BYTE and PAGE WRITE (up to 32 Bytes)
RANDOM and SEQUENTIAL READ Modes
Self-Tim ed P ro g ra m ming Cycle
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behavior
1 Million Erase/Write Cycles (minimum)
40 Year Data Retention (minimum)
DESCRIPTION
These I
2
C-compatible electrically erasable pro­grammable memory (EEPROM) devices are orga­nized as 8192x8 bits (M24C64) and 4096x8 bits (M24C32), and operate down to 2.5 V (for the -W version of each device), and down to 1.8 V (for the
-R version of each device). The M24C64 and M24C32 are available in Plastic
Dual-in-Line, Plastic Small Outline and Thin Shrink Small Outline packages.
Figure 1. Logic Diagram
AI01844B
3
E0-E2 SDA
V
CC
M24C64 M24C32
WC
SCL
V
SS
Table 1. Signal Names
E0, E1, E2 Chip Enable Inputs SDA Serial Data/Address Input/
Output SCL Serial Clock WC
Write Control V
CC
Supply Voltage V
SS
Ground
PSDIP8 (BN)
0.25 mm frame
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
8
1
8
1
8
1
SO8 (MW)
200 mil width
8
1
Page 2
M24C64, M24C32
2/19
These memory devices are compatible with the I
2
C extended memory standard. This is a two wire serial interface that uses a bi-directiona l data bus and serial clock. The memory carries a built-in 4­bit unique Device Type Identifier code (1010) in accordance with the I
2
C bus definition.
The memory behaves as a slave device in the I
2
C protocol, with all memory operations synchronized by the serial clock. Read and Write operations are initiated by a START condition, gene rated by the bus master. The START condition is followed by a Device Select Code and RW
bit (as described in
Table 3), terminated by an acknowledge bit. When writing data to the memory, the mem ory in-
serts an acknowledge bit during the 9
th
bit time,
following the bus master’s 8-bit transmission. When data is read by the bus master, the bus master acknowledges the receipt of the data byte in the same way. Data transfers are terminated by
a STOP condition after an Ack for WRITE, and af­ter a NoAck for READ.
Power On Reset: V
CC
Lock-Out Write Protect
In order to prevent data corruption and inadvertent write operations during power up, a Power On Re­set (POR) circuit is included. The internal reset is held active until the V
CC
voltage has reached the POR threshold value, and all operations are dis­abled – the device will not respond to any com­mand. In the same way, when V
CC
drops from the operating voltage, below the POR threshold value, all operations are disabled and the device will not respond to any com ma nd. A s table a nd v alid V
CC
must be applied before applying any logic signal.
SIGNAL DESCRIPTION Serial Clock (SCL)
The SCL input pin is used to strobe all data in and out of the memory. In applications where this line is used by slaves to synchronize the bus to a slow-
Figure 2A. DIP Connections
SDAV
SS
SCL
WCE1
E0 V
CC
E2
AI01845B
M24C64 M24C32
1 2 3 4
8 7 6 5
Figure 2B. SO and TSSOP Connections
1
AI01846B
2 3 4
8 7 6 5
SDAV
SS
SCL
WCE1
E0 V
CC
E2
M24C64 M24C32
Table 2. Absolute Maximum Ratings
1
Note: 1. Exc ept for the rating “Operating Temperature Range”, stresses above those l i sted in the Table “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indica te d i n the Operating secti ons of this specification is not im plied. Exposure to Absolute Ma xim um Rating condi­tions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL -STD-883C, 3015.7 (100 pF, 1500 )
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature -40 to 125 °C
T
STG
Storage Temperature -65 to 150 °C
T
LEAD
Lead Temperature during Soldering
PSDIP8: 10 seconds SO8: 40 seconds TSSOP8: 40 second s
260 215 215
°C
V
IO
Input or Output range -0.6 to 6.5 V
V
CC
Supply Voltage -0.3 to 6.5 V
V
ESD Electrostatic Discharge Voltage (Human Body model)
2
4000 V
Page 3
3/19
M24C64, M24C32
er clock, the master must have an open drain out­put, and a pull-up resistor must be connected from the SCL line to V
CC
. (Figure 3 indicates how the value of the pull-up res istor c an be calculated). In most applications, though, this method of synchro­nization is not employed, and so the pull-up resis­tor is not necessary, provided that the master has a push-pull (rather than open drain) output.
Serial Data (SDA)
The SDA pin is bi-directional, and is used to trans­fer data in or out of the memory. It is an open drain
output that may be wire-OR’ed with other open drain or open collector signals on the bus. A pull up resistor must be connected from the SDA bus to V
CC
. (Figure 3 indicates how the value of the
pull-up resistor can be calculated).
Chip Enable (E2, E1, E0)
These chip enable inputs are used to set the value that is to be looked for on the three least significant bits (b3, b2, b1) of the 7-bit device select code. These inputs may be driven dynamically or tied to V
CC
or VSS to establish the device select code (but
note that the V
IL
and VIH levels for the inputs are
CMOS compatible, not TTL compatible).
Write Control (WC
)
The hardware Write Control pin (WC
) is useful for protecting the entire contents of the memory from inadvertent erase/write. The Write Control signal is used to enable (WC
=VIL) or disable (WC=VIH) write instructions to the entire memory area. When unconnected, the WC
input is internally read as
V
IL
, and write operations are allowed.
When WC
=1, Device Select and Address bytes are acknowledged, Data bytes are not acknowl­edged.
Please see the Application Note
AN404
for a more
detailed description of the Write Control feature.
DEVICE OPERATION
The memory device supports the I
2
C protocol. This is summarized in Figure 4, and is compared with other serial bus protocols in Application Note
AN1001
. Any device that sends data on to the bus is defined to be a transm itter, and any device that reads the data to be a receiver. The device that controls the data transfer is k nown as the master, and the other as the slave. A data transfer can only be initiated by the mas ter, which wi ll also provide the serial clock for synchronization. The memory device is always a slave device in all comm unica­tion.
Start Condition
START is identified by a high t o low transition of the SDA line while the clock, SCL, is stable i n the high state. A START condition must precede any data transfer comman d. Th e m em ory devi ce con­tinuously monitors (except during a program ming cycle) the SDA and SCL lines for a START condi­tion, and will not respond unless one is given.
Stop Condition
STOP is identified by a low to high transition of the SDA line wh ile th e clock S CL is sta ble in the h igh state. A STO P condition terminates c ommunica­tion between the memory device and the bus mas­ter. A STOP condition at the end of a Read command, after (and only after) a NoAck, forces the memory device into its standby state. A STOP condition at the end of a Write command triggers the interna l EEPRO M write cycle.
Figure 3. Maximum R
L
Value versus Bus Capacitance (C
BUS
) for an I2C Bus
AI01665
V
CC
C
BUS
SDA
R
L
MASTER
R
L
SCL
C
BUS
100
0
4
8
12
16
20
C
BUS
(pF)
Maximum RP value (k)
10 1000
fc = 400kHz
fc = 100kHz
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M24C64, M24C32
4/19
Acknowledge Bit (ACK)
An acknowledge signal is used to indicate a suc­cessful byte transfer. The bus transmitter, whether it be master or slave, releases the SDA bus after sending eight bits of data. During the 9
th
clock pulse period, the receiver pulls the SDA bus low to acknowledge the receipt of the eight data bits.
Data Input
During data input, the memory device samples the SDA bus signal on the rising edge of the clock, SCL. For correct device operation, the SDA signal must be stable during the clock low-to-high transi­tion, and the data must change
only
when the SCL
line is low.
Memory Addressing
To start communication betwee n the bus master and the slave memory, the master must initiate a START condition. Following this, the master sends the 8-bit byte, shown in Table 3, on the SDA bus
line (most significant bit first). This consists of the 7-bit Device Select Code, and the 1-bit Read/Write Designator (RW). The Device Select Code i s fur­ther su bdi v i d ed i n to : a 4 -b i t D e vi c e T y pe Iden t if i er,
and a 3-bit Chip Enable “Address” (E2, E1, E0). To address the memory array, the 4-bit Device
Type Identifier is 1010b. Up to eight memory devices can be connected on
a single I
2
C bus. Each one is given a uniq ue 3-bit code on its Chip Enable inputs. When the Dev ice Select Code is received on the SDA bus, the mem­ory only responds if the Chip Select Code is the same as the pattern applied to its Chip Enable pins.
The 8
th
bit is th e RW bit. This is set to ‘1’ for read and ‘0’ for write operations. If a match occurs on the Device Select Cod e, th e corresponding mem­ory gives an acknowledgment on the SDA bus dur­ing the 9
th
bit time. If the memo ry does n ot ma tch
Figure 4. I
2
C Bus Protocol
SCL
SDA
SCL
SDA
SDA
START
CONDITION
SDA
INPUT
SDA
CHANGE
AI00792
STOP
CONDITION
1 23 789
MSB
ACK
START
CONDITION
SCL
1 23 789
MSB ACK
STOP
CONDITION
Page 5
5/19
M24C64, M24C32
the Device Select Code, it deselects itself from the bus, and goes into stand-by mode.
There are two modes both for read and write. These are summarized in Table 6 and described later. A communication between the m aster and the slave is ended with a STOP condition.
Each data byte in the m emory has a 16-bit (two byte wide) address. The Most Significant Byte (Ta­ble 4) is sent first, f ollowed by the Least significant Byte (Table 5). Bits b15 to b0 form t he addre ss of the byte in memory. Bits b15 to b13 are treated as
a Don’t Care bit on the M24C64 memory. Bits b15 to b12 are treated as Don’t Care bits on the M24C32 me m o r y .
Write Operations
Following a START con dition the ma ster sends a Device Select Code with the RW
bit set to ’0’, as shown in Table 6. The memory acknowledges this, and waits for two address bytes. The memory re­sponds to each address byte with an acknowledge bit, and then waits for the data byte.
Writing to the memory may be inhibited if the WC input pin is taken high. Any write command with WC
=1 (during a period of time from the START condition until the end of the two address bytes) will not modify the me mory c ontents, and t he ac­companying data bytes will
not
be acknowledged
(as shown in Figure 5).
Byte Write
In the Byte Write mode, after the Device Select Code and the address bytes, the master sends one data byte. If the addressed lo cation is write
protected by the WC
pin, the memory replies with a NoAck, and the location is not modified. If, in­stead, the WC
pin has been held at 0, as shown in Figure 6, the memory replies with an Ack. The master terminates the transfer by generating a STOP condition.
Page Write
The Page Write mode allows u p to 32 by tes to be written in a single write cycle, provided that they are all located in the same ’row’ in the memory: that is the most significant memory add ress bits (b12-b5 for the M24C64 and b11-b5 for the M24C32) are the same. If more bytes are sent than will fit up to the end of t he row, a condit ion known as ‘roll-over’ occurs. Data starts to become overwritten (in a way not formally specified in this data sheet).
The master sends from one up to 32 bytes of data, each of which is acknow ledged by the memory if the W C
pin is low. If the WC pin is high, the con­tents of the addressed memory location are not modified, and each data byte is followed by a NoAck. After each byte i s tran sferred, the i nte rnal
Table 3. Device Select Code
1
Note: 1. The most significant bit, b7, is sent first.
Device Type Identifier Chip Enable RW
b7 b6 b5 b4 b3 b2 b1 b0
Device Select Code 1 0 1 0 E2 E1 E 0 RW
Table 4. Most Significant Byte
Note: 1. b15 to b13 are Don’t Care on the M24C6 4 series.
b15 to b12 are Don’t Care on the M 24C32 serie s.
Table 5. Least Significant Byte
b15 b14 b13 b12 b11 b10 b9 b8
b7 b6 b5 b4 b3 b2 b1 b0
Table 6. Operating Modes
Note: 1. X = V
IH
or V
IL
.
Mode RW bit
WC
1
Bytes Initial Sequence
Current Address Read 1 X 1 START, Device Select, RW
= ‘1’
Random Address Read
0X
1
START, Device Select, RW
= ‘0’, Address
1 X reSTART, Device Select, RW
= ‘1’ Sequential Read 1 X 1 Similar to Current or Random Address Read Byte Write 0 V
IL
1 START, Device Select, RW = ‘0’
Page Write 0 V
IL
32 START, Device Select, RW = ‘0’
Page 6
M24C64, M24C32
6/19
Figure 5. Wri te Mo de S e qu e nces with WC=1 (data write inhib i ted)
STOP
START
BYTE WRITE DEV SEL BYTE ADDR BYTE ADDR DATA IN
WC
START
PAGE WRITE DEV SEL BYTE ADDR BYTE ADDR DATA IN 1
WC
DATA IN 2
AI01120B
PAGE WRITE (cont'd)
WC (cont'd)
STOP
DATA IN N
ACK ACK ACK NO ACK
R/W
ACK ACK ACK NO ACK
R/W
NO ACK NO ACK
byte address counter (the 5 least significant bits only) is incremented. The transfer is terminated by the master generating a STOP condition.
When the master generates a STOP condition im-
mediately after the Ack bit (in the “10
th
bit” time slot), either at the end of a byte write or a page write, the internal memory write cycle is triggered. A STOP condition at any other time does not t rig­ger the internal write cycle.
During the internal write cycle, the SDA input is disabled internally, and the device does not re­spond to any requests.
Page 7
7/19
M24C64, M24C32
Figure 6. Wri te Mo de S e qu e nces with WC=0 (data write enab led )
STOP
START
BYTE WRITE DEV SEL BYTE ADDR BYTE ADDR DATA IN
WC
START
PAGE WRITE DEV SEL BYTE ADDR BYTE ADDR DATA IN 1
WC
DATA IN 2
AI01106B
PAGE WRITE (cont'd)
WC (cont'd)
STOP
DATA IN N
ACK
R/W
ACK ACK ACK
ACK ACK ACK ACK
R/W
ACKACK
Page 8
M24C64, M24C32
8/19
Read Operations
Read operations are performed independently of the state of the WC
pin.
Random Address Read
A dummy write is performed to load the address into the address counter, as shown in Figure 8. Then,
without
sending a STOP condition, the mas­ter sends another START condi tion, and repeats the Device Select Code, with the RW
bit set to ‘1’. The memory acknowledge s this, and outputs the contents of the addressed byte. The master m ust
not
acknowledge the by te output, and terminates
the transfer with a STOP condition.
Current Address Read
The device has an internal address counter which is incremented each time a byte is read. For the Current Address Read m ode, following a START condition, the master sends a Device Select Code with the RW
bit set to ‘1’. The memory acknowl-
edges this, and outputs the byte addressed by the
Minimizing System Delays by Polling On ACK
During the internal write cycle, the memory discon­nects itself from the bus, and copies the data from its internal latches to the memory cells. The maxi­mum write time (t
w
) is shown in Table 9, but the typical time is shorter. To make use of this, an Ack polling sequence can be used by the master.
The sequence, as shown in Figure 7, is: – Initial condition: a Write is in progress. – Step 1: the m aster issues a ST ART condition
followed by a Device Select Code (the first byte of the new instruction).
– Step 2: if the memory is busy with the internal
write cycle, no Ack will be returned and the mas­ter goes back to Step 1. If the memory has ter­minated the internal write cycle, it responds with an Ack, indicating that the m emory is ready to receive the second part of the nex t instruction (the first byte of this instruction having been sent during Step 1).
Figure 7. Wri te Cy cle Pol l in g Fl owchart using A CK
WRITE Cycle
in Progress
AI01847
Next
Operation is
Addressing the
Memory
START Condition
DEVICE SELECT
with RW = 0
ACK
Returned
YES
NO
YESNO
ReSTART
STOP
Proceed
WRITE Operation
Proceed
Random Address
READ Operation
Send
Byte Address
First byte of instruction with RW = 0 already decoded by M24xxx
Page 9
9/19
M24C64, M24C32
The output data comes from consecutive address­es, with the internal address counter automatically incremented after each byte output. After the last
memory address, the address coun ter ‘rolls-over’ and the memory continues to output data from memory address 00h.
Acknowledge in Read Mode
In all read modes, the memory waits, after each byte read, for an acknowledgment during the 9
th
bit time. If the master does n ot pull the SDA line low during this time, the memory terminates the data transfer and switches to its stand-by state.
internal address counter. The counter is then in­cremented. The master terminates the transfer with a STOP condition, as shown in Figure 8,
with-
out
acknowledging the byte output.
Sequenti a l Rea d
This mode can be initiated with either a Current Address Read or a Random Address Read. The master
does
acknowledge the data byte output in this case, and the memory continues to output the next byte in sequence. To terminate the stream of bytes, the master must
not
acknowledge the last
byte output, and
must
generate a STOP condition.
Figure 8. Read Mode Sequences
Note: 1. The seven most signi fi cant bits of the D evice Select Code of a Random Read (in the 1st and 4th bytes) must be i d entica l.
START
DEV SEL * BYTE ADDR BYTE ADDR
START
DEV SEL DATA OUT 1
AI01105C
DATA OUT N
STOP
START
CURRENT ADDRESS READ
DEV SEL DATA OUT
RANDOM ADDRESS READ
STOP
START
DEV SEL * DATA OUT
SEQUENTIAL CURRENT READ
STOP
DATA OUT N
START
DEV SEL * BYTE ADDR BYTE ADDR
SEQUENTIAL RANDOM READ
START
DEV SEL * DATA OUT 1
STOP
ACK
R/W
NO ACK
ACK
R/W
ACK ACK ACK
R/W
ACK ACK ACK NO ACK
R/W
NO ACK
ACK ACK ACK
R/W
ACK ACK
R/W
ACK NO ACK
Page 10
M24C64, M24C32
10/19
Table 7. DC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C; VCC = 4.5 to 5.5 V or 2.5 to 5.5 V)
(T
A
= 0 to 70 °C or –20 to 85 °C; VCC = 1.8 to 3.6 V)
Note: 1. This is preliminary data.
Table 8. Input Parameters1 (TA = 25 °C, f = 400 kHz)
Note: 1. Sampled only, not 100% tested.
Symbol Parameter Test Condition Min. Max. Unit
I
LI
Input Leakage Current (SCL, SDA)
0V ≤ V
IN
V
CC
± 2 µA
I
LO
Output Leakage Current 0 V V
OUT
V
CC,
SDA in Hi-Z ± 2 µA
I
CC
Supply Current
V
CC
=5V, fc=400kHz (rise/fall time < 30ns)
2mA
-W series:
V
CC
=2.5V, fc=400kHz (rise/fall time < 30ns)
1mA
-R series:
V
CC
=1.8V, fc=100kHz (rise/fall time < 30ns)
0.8
1
mA
I
CC1
Supply Current (Stand-by)
V
IN
= VSS or V
CC
, V
CC
= 5 V 10 µA
-W series: V
IN
= VSS or V
CC
, V
CC
= 2.5 V 2 µA
-R series: V
IN
= VSS or V
CC
, V
CC
= 1.8 V
1
1
µA
V
IL
Input Low Voltage (E0-E2, SCL, SDA)
– 0.3 0.3 V
CC
V
V
IH
Input High Voltage (E0-E2, SCL, SDA)
0.7V
CC
VCC+1 V
V
IL
Input Low Voltage (WC) – 0.3 0.5 V
V
IH
Input High Voltage (WC)
0.7V
CC
VCC+1
V
V
OL
Output Low Voltage
I
OL
= 3 mA, VCC = 5 V
0.4 V
-W series: I
OL
= 2.1 mA, VCC = 2.5 V 0.4 V
-R series:
I
OL
= 0.7 mA, VCC = 1.8 V
0.2
1
V
Symbol Parameter Test Condition Min. Max. Unit
C
IN
Input Capacitance (SDA) 8 pF
C
IN
Input Capacitance (other pins) 6 pF
Z
L
WC Input Impedance VIN < 0.5 V 5 20 k
Z
H
WC Input Impedance VIN > 0.7V
CC
500 k
t
NS
Low Pass Filter Input Time Constant (SCL and SDA)
100 ns
Page 11
11/19
M24C64, M24C32
Table 9. AC Characteristics
Note: 1. For a r eS T ART conditio n, or following a w ri te cycle.
2. Samp l ed only, not 100% tested.
3. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA.
4. This i s preliminary dat a.
Symbol Alt. Parameter
M24C64 / M24C32
Unit
V
CC
=4.5 to 5.5 V
T
A
=0 to 70°C or
–40 to 85°C
V
CC
=2.5 to 5.5 V
T
A
=0 to 70°C or
–40 to 85°C
V
CC
=1.8 to 3.6 V
T
A
=0 to 70°C or
–20 to 85°C
4
Min Max Min Max Min Max
t
CH1CH2
t
R
Clock Rise Time 300 300 1000 ns
t
CL1CL2
t
F
Clock Fall Time 300 300 300 ns
t
DH1DH2
2
t
R
SDA Rise Time 20 300 20 300 20 1000 ns
t
DL1DL2
2
t
F
SDA Fall Time 20 300 20 300 20 300 ns
t
CHDX
1
t
SU:STA
Clock High to Input Transition 600 600 4700 ns
t
CHCL
t
HIGH
Clock Pulse Width High 600 600 4000 ns
t
DLCLtHD:STA
Input Low to Clock Low (START) 600 600 4000 ns
t
CLDXtHD:DAT
Clock Low to Input Transition 0 0 0 µs
t
CLCH
t
LOW
Clock Pulse Width Low 1.3 1.3 4.7 µs
t
DXCXtSU:DAT
Input Transition to Clock Transition
100 100 250 ns
t
CHDHtSU:STO
Clock High to Input High (STOP) 600 600 4000 ns
t
DHDL
t
BUF
Input High to Input Low (Bus Free)
1.3 1.3 4.7 µs
t
CLQV
3
t
AA
Clock Low to Data Out Valid 200 900 200 900 200 3500 ns
t
CLQX
t
DH
Data Out Hold Time After Clock Low
200 200 200 ns
f
C
f
SCL
Clock Frequency 400 400 100 kHz
t
W
t
WR
Write Time 10 10 10 ms
Table 10. AC Measurement Conditions
Input Rise and Fall Times 50 ns Input Pulse Voltages
0.2V
CC
to 0.8V
CC
Input and Output Timing Reference Voltages
0.3V
CC
to 0.7V
CC
Figure 9. AC Testing Input Output Waveforms
AI00825
0.8V
CC
0.2V
CC
0.7V
CC
0.3V
CC
Page 12
M24C64, M24C32
12/19
Figure 10. AC Waveforms
SCL
SDA IN
SCL
SDA OUT
SCL
SDA IN
tCHCL
tDLCL
tCHDX
START
CONDITION
tCLCH
tDXCX
tCLDX
SDA
INPUT
SDA
CHANGE
tCHDH
tDHDL
STOP &
BUS FREE
DATA VALID
tCLQV tCLQX
DATA OUTPUT
tCHDH
STOP
CONDITION
tCHDX
START
CONDITION
WRITE CYCLE
tW
AI00795B
Page 13
13/19
M24C64, M24C32
Table 11. Ordering Information Scheme
Note: 1. Temperature range available onl y on request.
2. For conformity to the High Reliability Certified Flow (HRCF), please contact your nearest ST Sales Office.
3. The -R version (V
CC
range 1.8 V t o 3. 6 V) only availab l e i n temperature ranges 5 or 1.
Example: M24C64 –R MN 6 T
Memory Capacity Option
64 64 Kbit (8K x 8) T Tape and Reel Packing 32 32 Kbit (4K x 8)
Operating Voltage
blank 4.5 V to 5.5 V W 2.5V to 5.5 V
R
4
1.8 V to 3.6 V
Package Temperature Range
BN PSDIP8 (0.25 mm frame)
1
2
0 °C to 70 °C MN SO8 (150 mil width) 6 –40 °C to 85 °C MW SO8 (200 mil width)
3
3
–40 °C to 125 °C DW TSSOP8 (169 mil width) 5 –20 °C to 85 °C
ORDERING INFORMATION
Devices are shipped from the factory with the
memory content set at all ‘1’s (FFh). The notation used for the device number is as
shown in Table 11. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office.
Page 14
M24C64, M24C32
14/19
Figure 11. PSDIP8 (BN)
Note: 1. Drawing is not to sc al e.
PSDIP-a
A2
A1AL
e1
D
E1 E
N
1
C
eA
eB
B1
B
Table 12. PSDIP8 - 8 pin Plastic Skinny DIP, 0.25mm lead frame
Symb.
mm inches
Typ. Min. Max. Typ. Min. Max.
A 3.90 5.90 0.154 0.232
A1 0 .49 0.019
A2 3 .30 5.30 0.130 0.209
B 0.36 0.56 0.014 0.022
B1 1 .15 1.65 0.045 0.065
C 0.20 0.36 0.008 0.014 D 9.20 9.90 0.362 0.390 E 7.62 0. 300
E1 6 .00 6.70 0.236 0.264
e1 2.54 0. 100 – eA 7 .80 0.307 – eB 10.00 0.394
L 3.00 3.80 0.118 0.150 N8 8
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Table 13. SO8 - 8 lead Plastic Small Outline, 150 mils body width
Symb.
mm inches
Typ. Min. Max. Typ. Min. Max.
A 1.35 1 .75 0.053 0.069
A1 0 .10 0.25 0.004 0.010
B 0.33 0 .51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4 .00 0.150 0.157 e 1.27 0.050
H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 0.90 0.016 0.035 α N8 8
CP 0.10 0.004
Figure 12. SO8 narrow (MN)
Note: 1. Drawing is not to sc al e.
SO-a
E
N
CP
B
e
A
D
C
LA1 α
1
H
h x 45˚
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Table 14. SO8 - 8 lead Plastic Small Outline, 200 mils body width
Symb.
mm inches
Typ. Min. Max. Typ. Min. Max.
A 2.03 0.080 A1 0 .10 0.25 0.004 0.010 A2 1.78 0.070
B 0.35 0 .45 0.014 0.018
C 0.20 0.008
D 5.15 5.35 0.203 0.211
E 5.20 5 .40 0.205 0.213
e 1.27 0.050
H 7.70 8.10 0.303 0.319
L 0.50 0.80 0.020 0.031
α 10° 10°
N8 8
CP 0.10 0.004
Figure 13. SO8 wide (MW)
Note: 1. Drawing is not to sc al e.
SO-b
E
N
CP
B
e
A2
D
C
LA1 α
H
A
1
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Table 15. TSSOP8 - 8 lead Thin Shrink Small Outline
Symb.
mm inches
Typ. Min. Max. Typ. Min. Max.
A 1.10 0.043 A1 0 .05 0.15 0.002 0.006 A2 0 .85 0.95 0.033 0.037
B 0.19 0 .30 0.007 0.012
C 0.09 0.20 0.004 0.008
D 2.90 3.10 0.114 0.122
E 4.30 4 .50 0.169 0.177
e 0.65 0.026
H 6.25 6.50 0.246 0.256
L 0.50 0.70 0.020 0.028
α
N8 8
CP 0.08 0.003
Figure 14. TSSOP8 (DW)
Note: 1. Drawing is not to sc al e.
TSSOP
1
N
CP
N/2
DIE
C
L
A1
EE1
D
A2A
α
eB
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Table 16. Revision History
Date Description of Revision
22-Dec-1999 TSSOP8 package in place of TSSOP14 (pp 1, 2, OrderingInfo, PackageMechData).
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