Datasheet M2322Z#300, M2322Z#400 Datasheet (Westcode Semiconductors)

Date:- 28 Nov, 2003

WESTCODE

An IXYS Company

Fast Recovery Diode

Type M2322Z#300 to M2322Z#400

Old Type No.: SM30-40CXC384

Absolute Maximum Ratings

VOLTAGE RATINGS

V

RRM

V

RSM

I

F(AV)M

I

F(AV)M

I

F(AV)M

I

F(RMS)

I

F(d.c.)

I

FSM

I

FSM2

I2tI

I2t

T

j op

T

stg

Repetitive peak reverse voltage, (note 1) 3000-4000 V

Non-repetitive peak reverse voltage, (note 1) 3100-4100 V

OTHER RATINGS

Maximum average forward current, T

Maximum average forward current. T

Maximum average forward. T

Nominal RMS forward current, T

D.C. forward current, T

Peak non-repetitive surge tp=10ms, VRM=60% V

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

2

t capacity for fusing tp=10ms, VRM=60% V

I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)

Operating temperature range -40 to +125 °C

Storage temperature range -40 to +150 °C

sink

=100°C, (note 3) 585 A

sink

=25°C, (note 4) 3819 A

=55°C, (note 2) 2322 A

sink

=100°C, (note 2) 1053 A

sink

=25°C, (note 2) 4690 A

sink

, (note 5) 23.0 kA

RRM

, (note 5) 2.64×10

RRM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

25.3 kA

6

3.19×10

6

UNITS

UNITS

A2s

A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 1 of 11 November, 2003

initial.

j

below 25°C.

j

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

V

r

V

I

Q

Q

I

t

R

FM

T0

T

FRM

RRM

rr

ra

rm

rr

thJK

Maximum peak forward voltage

Threshold voltage - - 1.67 V

Slope resistance - - 0.186

Maximum forward recovery voltage

Peak reverse current

Recovered charge - 3200 - µC

Recovered charge, 50% Chord - 1450 2000 µC

Reverse recovery current - 450 - A

Reverse recovery time, 50% Chord - 6.5 -

Thermal resistance, junction to heatsink

- - 2.04 IFM=2000A

--2.6I

=4650A

FM

mΩ

- - 40 di/dt = 1000A/µs, Tj=25°C V

- - 80 di/dt = 1000A/µs V

- - 10 Rated V

- - 150 Rated V

I

=1000A, tp=200µs, di/dt=150A/µs,

FM

V

=50V, 50% Chord.

r

- - 0.011 Double side cooled

RRM,Tj

RRM

=25°C

mA

K/W

- - 0.022 Single side cooled

V

µs

F Mounting force 37 - 47 kN

W

Weight

t

- 1.7 - Outline option ZC

- 1.2 - Outline option ZD

kg

Notes:-

1) Unless otherwise indicated T

=125°C.

j

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 2 of 11 November, 2003

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade V

30 3000 3100 1750
32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900
38 3800 3900 1950
40 4000 4100 2000

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:

where IF = instantaneous forward current.

4.0 Reverse recovery ratings

RRM

(V)

V

RSM

(V)

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

V

dc

R

(V)

(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.

(ii) Qrr is based on a 150µs integration time.

s

µ

150

I.e.

(iii)

=

FactorK =

dtiQ

.

rrrr

∫

0

t

1

t

2

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 3 of 11 November, 2003

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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.

From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:

[]

Where k = 0.2314 (°C/W)/s

E

= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.

R

= d.c. thermal resistance (°C/W)

th(JK

The total dissipation is now given by:

fEWW

originaltot

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

)()(

⋅+=

RfkETT ⋅+⋅−=

)()( JKthMAXjSINK

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:

2

R

Where: Vr= Commutating source voltage

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

V

⋅= 4

C

R = Snubber resistance

r

di

C

⋅

dt

S

= Snubber capacitance

S

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 4 of 11 November, 2003

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7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

2

4

T

0

2

I

=

AV

Where VT0 = 1.67V, rT = 0.186mΩ

0

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTT

ff = form factor (normally unity for fast diode applications)

∆

T

W

The forward characteristic I
(i) the well established V

((iiii))

=

AV

a set of constants A, B, C, and D forming the coefficients of the representative equation for V

R

th

TTT

−=∆

)(

7.2 Calculation of V

terms of I

given below:

F

KMAXj

using ABCD Coefficients

F

Vs VF, on page 6 is represented in two ways;

F

and rT tangent used for rating purposes and

T0

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

in

F

The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
which is limited to that plotted.

A

B

C

D

8.0 Frequency Ratings

The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.

9.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

agree with the true device characteristic over a current range,

F

25°C Coefficients 125°C Coefficients

1.124321942 0.843443067

0.04257214 0.06248064

8.01656×10

0.01099609 0.01243957

-5

8.26666×10

-5

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 5 of 11 November, 2003

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Curves

Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage

10000

M2322Z#300-400

Issue 1

125°C25°C

1000

M2322Z#300-400

Issue 1

(A)

FM

1000

Instantaneous forward current - I

100

0.511.522.533.5

Maximum instantaneous forw ard voltage - V

Figure 3 - Recovered charge, Q

10000

M2322Z#300-400

Issue 1

Tj = 125°C

(V)

FRM

100

10

Maximum forward recovery voltage - V

1

(V)

FM

rr

4000A

3000A

2000A

Figure 4 - Recovered charge, Qra (50% chord)

10 100 1000 10000

Rate of rise of forward current - di/dt (A/µs)

10000

M2322Z#300-400

Issue 1

Tj = 125°C

125°C

25°C

1000A

(µC)

rr

Total recovered charge - Q

1000

10 100 1000

Commutat ion rate - d i/dt (A/µs)

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 6 of 11 November, 2003

(µC)

ra

Recovered charge - Q

1000

10 100 1000

Commutation rate - di/dt (A/µs)

4000A

3000A

2000A

1000A

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A

A

A

A

A

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Figure 5 - Maximum reverse current, I

1000

M2322Z#300-400

Issue 1

Tj = 125°C

(A)

rm

Reverse recovery current - I

100

10 100 1000

Commutat ion rate - d i/dt (A/µs)

rm

4000A
3000A
2000A
1000A

Figure 6 - Maximum recovery time, trr (50% chord)

100

M2322Z#300-400

Issue 1

Tj = 125°C

(µs)

rr

10

Recovery time - t

1

10 100 1000

Commutation rate - di/dt (A/µs)

4000A
3000A
2000A
1000A

Figure 7 – Reverse recovery energy per pulse Figure 8 - Sine wave energy per pulse

100

M2322Z#300-400

Issue 1

Tj = 125°C

VR = 67%V

Cs = 0.25µF

(J)

r

10

Energy per pulse - E

1

10 100 1000

RRM

4000A

2000A

1000A

500A

Commutation rate - d i/dt (A/µs)

1.00E+03

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

M2322Z#300-400

Issue 1

Tj = 125°C

6000
4000
3000
2000
1000

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 7 of 11 November, 2003

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Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

1.00E+04

1kA

2kA

3kA

M2322Z#300-400

Issue 1

100% Duty Cycle

TK = 55°C

1.00E+05

1.00E+04

1kA

2kA

M2322Z#300-400

100% Duty Cycle

Issue 1

TK = 85°C

4kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

6kA

1.00E-05 1.00E -04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

3kA

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E -02

Pulse width (s)

Figure 11 - Square wave frequency vs. pulse width Figure 12 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

1kA

2kA

M2322Z#300-400

Issue 1

di/dt =100A/µs

TK=55°C

100% Duty Cycle

1.00E+05

1.00E+04

1kA

2kA

M2322Z#300-400

di/dt =500A/µs

100% Duty Cycle

Issue 1

TK = 55°C

3kA

4kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 8 of 11 November, 2003

6kA

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

3kA

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

1kA

2kA

3kA

M2322Z#300-400

Issue 1

di/dt =100A/µs

TK = 85°C

100% Duty Cycle

1.00E+05

1.00E+04

1kA

2kA

3kA

M2322Z#300-400

Issue 1

di/dt =500A/µs

TK = 85°C

100% Duty Cycle

4kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

6kA

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave energy per pulse Figure 16 - Square wave energy per pulse

1.00E+03

1.00E+02

M2322Z#300-400

Issue 1

di/dt =100A/µs

Tj = 125°C

1.00E+03

1.00E+02

M2322Z#300-400

Issue 1

di/dt =500A/µs

Tj = 125°C

6000A
4000A
3000A
2000A
1000A

1.00E+01

6kA

Energy per pulse (J)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E -03 1.00E-02

4kA

3kA

2kA

1kA

Pulse width (s)

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E -02

Pulse width (s)

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 9 of 11 November, 2003

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Figure 17 – Maximum surge and I2t ratings

100000

(A)

FSM

10000

Total peak half sine surge current - I

1000

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

I2t: V

I2t: VR=60% V

I

FSM

I

: VR=60% V

FSM

Tj (initial) = 125°C

M2322Z#300-400

Issue 1

: V

RRM

RRM

≤

≤

10V

RRM

10V

RRM

1.00E+08

1.00E+07

1.00E+06

2

2

s)

t (A

Maximum I

Figure 18 – Transient thermal impedance

0.1

M2322Z#300-400

Issue 1

0.01

0.001

Thermal impedance (K/W)

0.0001

0.0001 0.001 0.01 0.1 1 10 100

SSC 0.022K/W

DSC 0.011K/W

Time (s)

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 10 of 11 November, 2003

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Outline Drawing & Ordering Information

100A310

Outline option ZC Outline option ZD

ORDERING INFORMATION (Please quote 10 digit code as below)



 

M2322

Fixed

Type Code

Typical order code: M2322ZC340 – 3400V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with
the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any ti me without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/di git/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.



Outline code

ZC=37.7mm height,

ZD=26mm height

, 37.7mm clamp height capsule.

RRM

WESTCODE

An IXYS Company

www.westcode.com

www.ixys.com





Voltage code

/100

V

DRM

30-40

0

Fixed code

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: [phone]

Fax: [phone]

E-mail: WSL.sales@westcode,com

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© Westcode Semiconductors Ltd.

Data Sheet. Types M2322Z#300 to M2322Z#400 Issue 1 Page 11 of 11 November, 2003