Datasheet M2273V#300, M2273V#360 Datasheet (Westcode Semiconductors)

Fast Recovery Diode

Types M2273V#300 to M2273V#360

Absolute Maximum Ratings

Date:- 26 Aug, 2003

Data Sheet Issue:- 1

VOLTAGE RATINGS

V

RRM

V

RSM

I

F(AV)M

I

F(AV)M

I

F(AV)M

I

F(RMS)M

I

F(d.c.)

I

FSM

I

FSM2

I2tI

I2t

T

j op

T

stg

Notes:-

1)

2)

3)

4)

5)

Repetitive peak reverse voltage, (note 1) 3000-3600 V

Non-repetitive peak reverse voltage, (note 1) 3100-3700 V

OTHER RATINGS

Maximum mean forward current, T

Maximum mean forward current. T

Maximum mean forward current. T

Maximum RMS forward current, T

D.C. forward current, T

Peak non-repetitive surge tp=10ms, VRM=0.6V

Peak non-repetitive surge tp=10ms, V

2

t capacity for fusing tp=10ms, VRM=0.6V

I2t capacity for fusing tp=10ms, V

(note 6)

=55°C, (note 2) 2273 A

sink

=100°C, (note 2) 1479 A

sink

=100°C, (note 3) 881 A

sink

=25°C, (note 2) 4265 A

sink

=25°C, (note 4) 3663 A

sink

RRM

≤

10V, (note 5)

RM

, (note 5) 3.92×10

RRM

≤

10V, (note 5)

RM

Operating temperature range -40 to +150 °C

Storage temperature range -40 to +150 °C

De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
Double side cooled, single phase; 50Hz, 180° half-sinewave.
Single side cooled, single phase; 50Hz, 180° half-sinewave.
Double side cooled.
Half-sinewave, 150°C Tj initial.

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

UNITS

, (note 5) 28.0 kA

30.8 kA

4.74×10

6

6

A2s

A2s

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 1 of 11 August, 2003

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Characteristics

Fast Recovery Diode Types M2273V#300 to M2273V#360

UNITS

V

m

V

mA

µs

K/W

V

V

r

V

I

Q

Q

I

t

R

FM

T0

T

FRM

RRM

rr

ra

rm

rr

thJK

PARAMETER MIN. TYP. MAX. TEST CONDITIONS

Maximum peak forward voltage

- - 2.90 IFM=6800A

- - 2.40 I

=4550A

FM

(Note 1)

Threshold voltage - - 1.239 V

Slope resistance - - 0.244

Maximum forward recovery voltage

- - 40 di/dt = 1000A/µs, Tj=25°C

- - 95 di/dt = 1000A/µs

Peak reverse current - - 150 Rated V

RRM

Reverse Recovery Charge - 2500 - µC

Recovered charge, 50% Chord - 1300 1500 µC

Reverse Recovery Current - 300 - A

I

=1000A, tp=1000µs, di/dt=60A/µs,

FM

V

=50V, 50% Chord.

r

Reverse recovery time, 50% Chord - 8.5 -

Thermal resistance, junction to heatsink

- - 0.016 Double side cooled

- - 0.032 Single side cooled

F Mounting force 27 - 34 kN

W

Weight (note 2)

t

- 1000 - Outline option VC

- 800 - Outline option VF

g

Ω

Notes:-

1) Unless otherwise indicated T

=150°C.

j

2) The outline code is denoted by a ‘#’ in the part number. See ordering information for details of outline
codes.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 2 of 11 August, 2003

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

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Fast Recovery Diode Types M2273V#300 to M2273V#360

V

Voltage Grade

30 3000 3100 1700
32 3200 3300 1800
34 3400 3500 1850
36 3600 3600 1900

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:

RRM

(V)

)ln(

where IF = instantaneous forward current.

4.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.

V

RSM

(V)

V

dc

R

(V)

IDICIBAV

⋅+⋅+⋅+=

FFFF

(ii) Qrr is based on a 150µs integration time.

s

µ

150

I.e.

(iii)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 3 of 11 August, 2003

=

FactorK

dtiQ

.

rrrr

∫

0

t

1

=

t

2

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)

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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.

From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:

Where k = 0.2314 (°C/W)/s

R

th(J-Hs

The total dissipation is now given by:

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RfkETT

)(

E

= Area under reverse loss waveform per pulse in joules (W.s.)

f

= Rated frequency in Hz at the original sink temperature.
= d.c. thermal resistance (°C/W)

originaltot

[]

)()(

⋅+=

⋅+⋅−=

thJKMAXjSINK

fEWW

Fast Recovery Diode Types M2273V#300 to M2273V#360

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:

2

R

Where: Vr= Commutating source voltage

6.0 Snubber Components

4

V

⋅=

C

R = Snubber resistance

r

di

C

⋅

dt

S

= Snubber capacitance

S

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 4 of 11 August, 2003

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7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

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Fast Recovery Diode Types M2273V#300 to M2273V#360

4

oo

I

=

AV

2

V

Where

ff

= form factor (normally unity for fast diode applications)

W

AV

The forward characteristic I
(i) the well established V

a set of constants A, B, C, and D forming the coefficients of the representative equation for V

((iiii))

=1.239V,

T0

T

∆

=

R

th

7.2 Calculation of V

terms of I

r

=0.244m

T

TTT

−=∆

KMAXj

)(

using ABCD Coefficients

F

F

given below:

F

Vs VF, on page 6 is represented in two ways;

2

2

rff

⋅⋅

s

Ω

and rT tangent used for rating purposes and

T0

WrffVV

⋅⋅⋅++−

AVs

⋅+⋅+⋅+=

)ln(

IDICIBAV

FFFF

in

F

The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
that plotted.

8.0 Frequency Ratings

The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.

9.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

agree with the true device characteristic over a current range, which is limited to

F

125°C Coefficients

A

B

C

D

0.266784016

0.09483974

1.47257×10

9.640009×10

-4

-3

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 5 of 11 August, 2003

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Fast Recovery Diode Types M2273V#300 to M2273V#360

Curves

Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage

10000

M2273V#300-360

Issue 1

150°C

1000

M2273V#300-360

Issue 1

150°C

(A)

FM

1000

Instantaneous forward current - I

100

0.511.522.533.5

Maximum instantaneous forward vo ltage - V

Figure 3 - Recovered charge, Q

10000

M2273V#300-360

Issue 1

Tj = 150°C 4000A

(µC)

rr

(V)

FRM

100

10

Maximum forward recovery voltage - V

1

(V)

FM

rr

2000A
1000A
500A

Figure 4 - Recovered charge, Qra (50% chord)

10 100 1000 10000

Rate of rise of forward current - di/dt (A/µs)

10000

M2273V#300-360

Issue 1

Tj = 150°C

(µC)

ra

25°C

4000A
2000A
1000A
500A

1000

Total recovered charge - Q

100

1 10 100 1000

Commutation rat e - di/dt (A/µs)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 6 of 11 August, 2003

1000

Recovered charge - Q

100

1 10 100 1000

Commutation rat e - di/dt (A/µs)

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Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 5 - Maximum reverse current, I

10000

M2273V#300-360

Issue 1

Tj = 150°C

1000

(A)

rm

100

Reverse recovery current - I

10

1 10 100 1000

Commutation rat e - di/dt (A/µs)

rm

4000A
2000A
1000A
500A

Figure 6 - Maximum recovery time, trr (50% chord)

100

M2273V#300-360

Issue 1

Tj = 150°C

(µs)

rr

10

4000A
2000A

Recovery time - t

1

1 10 100 1000

Commutation rat e - di/dt (A/µs)

1000A
500A

Figure 7 – Reverse recovery energy per pulse Figure 8 - Sine wave energy per pulse

10000

M2273V#300-360

Issue 1

Tj = 150°C

VRM = 67% V

No snubber

(mJ)

r

1000

Energy per pulse - E

100

10 100 1000 10000

RRM

Commutation rate - di/dt (A/µs)

4000A

2000A

1000A

500A

1.00E+03

1.00E+02

1.00E+01

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

M2273V#300-360

Issue 1

Tj = 150°C

5kA
4kA
2kA
1kA

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 7 of 11 August, 2003

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Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

1.00E+04

1.00E+03

1kA

2kA

4kA

M2273V#300-360

Issue 1

100% Duty Cycle

TK = 55°C

1.00E+05

1.00E+04

1.00E+03

1kA

2kA

4kA

500A

M2273V#300-360

100% Duty Cycle

Issue 1

TK = 85°C

Frequency (Hz)

5kA

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Frequency (Hz)

1.00E+02

5kA

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 11 – Square wave frequency vs pulse width Figure 12 - Square wave frequency vs pulse width

1.00E+05

1.00E+04

500A

1kA

2kA

M2273V#300-360

Issue 1

di/dt =100A/µs

TK=55°C

100% Duty Cycle

1.00E+05

1.00E+04

1kA

2kA

M2273V#300-360

di/dt =500A/µs

100% Duty Cycle

Issue 1

TK = 55°C500A

4kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 8 of 11 August, 2003

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4kA

5kA

Pulse width (s)

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Fast Recovery Diode Types M2273V#300 to M2273V#360

Figure 13 - Square wave frequency vs pulse width Figure 14 - Square wave frequency vs pulse width

1.00E+05

1kA

M2273V#300-360

Issue 1

di/dt =100A/µs

TK = 85°C

1.00E+05

500A

M2273V#300-360

Issue 1

di/dt =500A/µs

TK = 85°C

1.00E+04

100% Duty Cycle

2kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4kA

5kA

Pulse width (s)

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1kA

100% Duty Cycle

2kA

4kA

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave energy per pulse Figure 16 - Square wave energy per pulse

1.00E+03

M2273V#300-360

Issue 1

di/dt =100A/µs

Tj = 150°C

1.00E+03

M2273V#300-360

Issue 1

di/dt =500A/µs

Tj = 150°C

5kA

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 9 of 11 August, 2003

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

5kA

4kA

2kA

1kA

Pulse width (s)

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4kA
2kA
1kA

500A

Pulse width (s)

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Figure 17 – Maximum surge and I2t ratings

Fast Recovery Diode Types M2273V#300 to M2273V#360

100000

(A)

FSM

10000

Total peak half sine surge current - I

1000

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

≤

RRM

: V

RRM

Issue 1

10V

≤

10V

RRM

RRM

I2t: V

I

: VR=60% V

FSM

I2t: VR=60% V

I

FSM

Tj (initial) = 150°C

M2273V#300-360

1.00E+08

1.00E+07

1.00E+06

s)

2

t (A

2

Maximum I

Figure 18 – Transient thermal impedance

0.1

M2273V#300-360

Issue 1

0.01

0.001

Thermal impedance (K/W)

0.0001

0.0001 0.001 0.01 0.1 1 10 100

SSC 0.032K/W

DSC 0.016K/W

Time (s)

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 10 of 11 August, 2003

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Outline Drawing & Ordering Information

Fast Recovery Diode Types M2273V#300 to M2273V#360

Outline option VC Outline option VF

ORDERING INFORMATION

M2273 VC or VF

Fixed

Type Code

Typical order code: M2273VC340 – 3400V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.

Outline code
VC=33.1mm height
VF=26.5mm height

, 33.1mm clamp height capsule.

RRM

www.westcode.com

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(Please quote 10 digit code as below)

♦♦

♦♦

♦♦♦♦

Voltage code

/100

V

RRM

30-36

0

Fixed code

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire SN15 1GE.

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© Westcode Semiconductors Ltd.

Data Sheet. Types M2273V#300 to M2273V#360 Issue 1 Page 11 of 11 August, 2003