Datasheet M1502N#200, M1502N#250 Datasheet (Westcode Semiconductors)

Date:- 9 Sep, 2004

WESTCODE

An IXYS Company

Fast Recovery Diode

Type M1502N#200 to M1502N#250

Old Type No.: SM16-25CXC334

Absolute Maximum Ratings

VOLTAGE RATINGS

V

RRM

V

RSM

I

F(AV)M

I

F(AV)M

I

F(AV)M

I

F(RMS)

I

F(d.c.)

I

FSM

I

FSM2

I2tI
I2t
T

j op

T

stg

Repetitive peak reverse voltage, (note 1) 2000 - 2500 V
Non-repetitive peak reverse voltage, (note 1) 2100 - 2600 V

OTHER RATINGS

Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T
Nominal RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=60%V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

2

t capacity for fusing tp=10ms, VRM=60%V

2

I

t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range -40 to +150 °C
Storage temperature range -40 to +150 °C

sink

=100°C, (note 3) 600 A

sink

=25°C, (note 4) 2805 A

=55°C, (note 2) 1502 A

sink

=100°C, (note 2) 983 A

sink

=25°C, (note 2) 2451 A

sink

, (note 5) 17000 A

RRM

, (note 5) 1.45×10

RRM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

18700 A

6

1.75×10

6

UNITS

UNITS

A2s
A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 150°C T

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 1 of 11 September, 2004

initial.

j

below 25°C.

j

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

V
r

V

I
Q
Q
I
t

R

FM

T0

T

FRM

RRM

rr

ra

rm

rr

thJK

Maximum peak forward voltage

Threshold voltage - - 1.24 V
Slope resistance - - 0.44

Maximum forward recovery voltage

Peak reverse current - - 150 Rated V
Recovered charge - 350 - µC
Recovered charge, 50% Chord - 220 300 µC
Reverse recovery current - 125 - A
Reverse recovery time, 50% Chord - 3.5 -

Thermal resistance, junction to heatsink

- - 2.21 IFM=2200A

- - 2.50 I

=3000A

FM

- - 20 di/dt = 1000A/µs, 25°C

- - 50 di/dt = 1000A/µs

RRM

I

=1000A, tp=1000µs, di/dt=60A/µs,

FM

V

=50V, 50% Chord.

r

- - 0.022 Double side cooled

- - 0.044 Single side cooled

V

mΩ

V

mA

µs

K/W

F Mounting force 19 - 26 kN
W

Weight - 510 - g

t

Notes:-

1) Unless otherwise indicated T

=150°C.

j

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 2 of 11 September, 2004

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade V

20 2000 2100 1250
22 2200 2300 1350
24 2400 2500 1450
25 2500 2600 1500

2.0 De-rating Factor A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of

the expression for the forward characteristic given below:

where IF = instantaneous forward current.

4.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig.(a) below.

(V) V

RRM

(V) VR dc (V)

RSM

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

(ii) Qrr is based on a 150µs integration time.

s

µ

150

I.e.

(iii)

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 3 of 11 September, 2004

=

FactorK =

dtiQ

.

rrrr

∫

0

t

1

t

2

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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:

)(

Where k = 0.2314 (°C/W)/s

E

= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.

R

= d.c. thermal resistance (°C/W)

thJK

The total dissipation is now given by:

originaltot

NOTE 1 - Reverse Recovery Loss by Measurement

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:

(a) AC coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:

)()(

[]

fEWW

⋅+=

RfkETT ⋅+⋅−=

thJKMAXJSINK

2

R

Where: Vr= Commutating source voltage

6.0 Snubber Components When selecting snubber components, care m ust be taken not to us e excessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber dis charge current. If required, please cons ult
the factory for assistance.

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 4 of 11 September, 2004

V

⋅= 4

C

R = Snubber resistance

r

di

C

⋅

dt

S

= Snubber capacitance

S

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7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

I

=

AV

00

2

Where VT0 =1.24V, rT = 0.44mΩ

4

2

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTTT

ff = form factor (normally unity for fast diode applications)

∆

T

W

The forward characteristic I
(i) the well established V

((iiii))

=

AV

a set of constants A, B, C, and D forming the coefficients of the representative equation for V

R

th

TTT

−=∆

)(

7.2 Calculation of V

terms of I

given below:

F

KMAXj

using ABCD Coefficients

F

Vs VF, on page 6 is represented in two ways;

F

and rT tangent used for rating purposes and

T0

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

in

F

The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
that plotted.

8.0 Frequency Ratings The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maxim um ratings

shown on page 1.

9.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

agree with the true device characteristic over a current range, which is limited to

F

25°C Coefficients 150°C Coefficients
A
B
C
D

0.51203032 0.485978321

0.1498275 0.05898774

1.6748×10

4.1774×10

-4

-3

9.01697×10

0.022848

-5

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 5 of 11 September, 2004

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Curves

Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage

10000

M1502N#200-250

Issue 1

150°C25°C

1000

M1502N#200-250

Issue 1

(A)

FM

1000

Instantaneous forward current - I

100

01234

Maximum instantaneous forward voltage - V

Figure 3 - Recovered charge, Q

10000

M1502N#200-250

Issue 1

Tj = 150°C

(V)

FRM

100

10

Maximum forward recovery voltage - V

1

(V)

FM

rr

Figure 4 - Recovered charge, Qra (50% chord)

10 100 1000 10000

Rate of rise of forward current - di/dt (A/µs)

1000

M1502N#200-250

Issue 1

Tj = 150°C

150°C

25°C

2000A
1500A
1000A
500A

2000A

1000

(µC)

rr

Total recovered charge - Q

100

10

1 10 100 1000

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 6 of 11 September, 2004

Commutation rate - di/dt (A/µs)

1500A
1000A
500A

(µC)

ra

100

Recovered charge - Q

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

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Figure 5 - Maximum reverse current, I

1000

M1502N#200-250

Issue 1

Tj = 150°C

(A)

rm

100

Reverse recovery current - I

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

rm

2000A
1500A
1000A
500A

Figure 6 - Maximum recovery time, trr (50% chord)

10

(µs)

rr

Recovery time - t

1

1 10 100 1000

Commutation rate - di/dt (A/µs)

M1502N#200-250

Issue 1

Tj = 150°C

2000A
1500A
1000A
500A

Figure 7 – Reverse recovery energy per pulse Figure 8 - Sine wave energy per pulse

10

M1502N#200-250

Issue 1

Tj = 150°C

=67% V

V

r

RRM

0.5µF, 2.2Ω Snubber

(J)

r

1

Energy per pulse - E

0.1
1 10 100 1000

Commmutation r ate - di/dt (A/µs)

2000A
1500A
1000A

500A

1.00E+02

1.00E+01

Energy per pulse (J)

1.00E+00

1.00E-01

M1502N#200-250

Issue 1

Tj = 150°C

4000A
3000A
2000A
1000A

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 7 of 11 September, 2004

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Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

1000A

2000A

3000A

500A

M1502N#200-250

100% Duty Cycle

Issue 1

TK = 55°C

1.00E+05

1.00E+04

1.00E+03

Frequency (Hz)

500A

1000A

2000A

3000A

M1502N#200-250

100% Duty Cycle

Issue 1

TK = 85°C

4000A

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4000A

Pulse width (s)

Figure 11 - Square wave energy per pulse Figure 12 - Square wave energy per pulse

1.00E+02

1.00E+01

Energy per pulse (J)

M1502N#200-250

di/dt =100A/µs
Tj = 150°C

2000A

Issue 1

4000A

3000A

1.00E+02

1.00E+01

Energy per pulse (J)

M1502N#200-250

di/dt =500A/µs
Tj = 150°C

2000A

Issue 1

4000A
3000A

1.00E+00

1000A

500A

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 8 of 11 September, 2004

1.00E+00

1.00E-01

1000A

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

500A
1000A

M1502N#200-250

Issue 1

di/dt =100A/µs

100% Duty Cycle

TK=55°C

1.00E+05

1.00E+04
500A

M1502N#200-250

di/dt =500A/µs

100% Duty Cycle

Issue 1

TK = 55°C

2000A

1.00E+03
3000A

Frequency (Hz)

4000A

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1000A

2000A

3000A

4000A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency vs. pulse width Figure 16 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

500A

1000A

M1502N#200-250

Issue 1

di/dt =100A/µs

TK = 85°C

100% Duty Cycle

1.00E+05

1.00E+04

500A

M1502N#200-250

Issue 1

di/dt =500A/µs

TK = 85°C

100% Duty Cycle

1000A

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 9 of 11 September, 2004

2000A

3000A

4000A

Pulse width (s)

1.00E+03

Frequency (Hz)

2000A

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

3000A

4000A

Pulse width (s)

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Figure 17 – Maximum surge and I2t ratings

100000

(A)

FSM

10000

Total peak half sine surge current - I

1000

M1502N#200-250

Issue 1

Tj (initial) = 150°C

I2t: V

I2t: VR=60% V

I

FSM

I

: VR=60% V

FSM

: V

RRM

RRM

≤

≤

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

10V

RRM

10V

RRM

1.00E+08

1.00E+07

1.00E+06

2

2

s)
t (A

Maximum I

Figure 18 – Transient thermal impedance

0.1

M1502N#200-250

Issue 1

0.01

0.001

Thermal impedance (K/W)

0.0001

0.00001

0.0001 0.001 0.01 0.1 1 10 100

SSC 0.044K/W

DSC 0.022K/W

Time (s)

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 10 of 11 September, 2004

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Outline Drawing & Ordering Information

100A325

Housing Option NC Housing Option ND

ORDERING INFORMATION (P l ease quote 10 digit code as below)

M1502 N#

Fixed

Type Code

Typical order code: M1502NC250 – 2500V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with
the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to

the conditions and limits contained in this report.

Outline code

NC = 27.7mm Clamp hei ght

ND = 21mm Clamp height

, 27.7mm clamp height capsule.

RRM

WESTCODE

An IXYS Company

www.westcode.com

www.ixys.com

♦♦

♦♦

♦♦♦♦

Voltage code

/100

V

DRM

20-25

0

Fixed code

Westcode Semiconductors Ltd

Langley Park Way, Langl ey Park,

Chippenham, Wi l tshire, SN15 1GE.

Tel: [phone]

Fax: [phone]

E-mail: WSL.sales@westcode,com

Westcode Semiconductors INC

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© Westcode Semiconductors Ltd.

Data Sheet. Types M1502N#200 to M1502N#250 Issue 1 Page 11 of 11 September, 2004