A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
RRM
(V)
V
RSM
(V)
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
V
dc
R
(V)
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
=
FactorK=
dtiQ
.
rrrr
∫
0
t
1
t
2
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 3 of11November, 2002
Page 4
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)
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
[]
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
The total dissipation is now given by:
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
amplitude forward current.
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
= d.c. thermal resistance (°C/W)
th(J-Hs
fEWW
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
(a) AC coupled devices such as current transformers are not affected by prior passage of high
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
)()(
⋅+=
RfkETT
⋅+⋅−=
)()(HsJthMAXJSINK
−
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 4 of11November, 2002
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7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
oo
4
I
=
AV
2
Where V0 = 1.36V, rs = 0.557mΩ
rff
⋅⋅
s
WrffVV
⋅⋅⋅++−
AVs
ff = form factor (normally unity for fast diode applications)
∆
T
W
The forward characteristic I
(i) the well established V
((iiii))
=
AV
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
R
th
TTT
−=∆
)(
7.2 Calculation of V
terms of I
given below:
F
HsMAXj
using ABCD Coefficients
F
Vs VF, on page 6 is represented in two ways;
F
and rs tangent used for rating purposes and
o
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
in
F
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
that plotted.
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
agree with the true device characteristic over a current range, which is limited to
F
125°C Coefficients
A
B
C
D
1.046854851
-7.60529517×10
3.43523685×10
0.0163647192
-4
-4
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 5 of11November, 2002
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Curves
Figure 1 – Forward characteristics of Limit deviceFigure 2 – Maximum forward recovery voltage
10000
125°C
10000
(A)
FM
1000
Instantaneous forward current - I
100
0123456
Maximum instantaneous forward voltage - V
Figure 3 - Recovered charge, Q
10000
M1102NC500-600
Issue 1
Tj = 125°C
M1102NC500-600
rr
Issue 1
(V)
FRM
1000
100
Maximum forward recovery voltage - V
M1102NC500-600
10
(V)
FM
10100100010000
Rate of rise of forward current - di/dt (A/µs)
125°C
25°C
Issue 1
Figure 4 - Recovered charge, Qra (50% chord)
10000
M1102NC500-600
Issue 1
Tj = 125°C
2000A
1500A
(µC)
rr
Total recovered charge - Q
1000
101001000
Commutation rate - di/dt (A/µs)
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 6 of11November, 2002
1000A
500A
(µC)
ra
1000
Recovered charge - Q
100
101001000
Commutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
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Figure 5 - Maximum reverse current, I
1000
(A)
rm
Reverse recovery current - I
M1102NC500-600
100
101001000
Commutation rate - di/dt (A/µs)
rm
2000A
1500A
1000A
500A
Tj = 125°C
Issue 1
Figure 6 - Maximum recovery time, trr (50% chord)
100
(µs)
rr
10
2000A
Recovery time - t
1
101001000
Commutation rate - d i/dt (A/µs)
1500A
1000A
500A
Tj = 125°C
M1102NC500-600
Issue 1
Figure 7 – Reverse recovery energy per pulseFigure 8 - Sine wave energy per pulse
1000
M1102NC500-600
Issue 1
Tj = 125°C
V
= 67% V
rm
RRM
No Snubber
(mJ)
r
Energy per pulse - E
100
1101001000
Commutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
1.00E+02
4kA
3kA
2kA
1kA
500A
1.00E+01
Energy per pulse (J)
1.00E+00
M1102NC500-600
1.00E-01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Tj = 125°C
Issue 1
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 7 of11November, 2002
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Figure 9 - Sine wave frequency vs. pulse widthFigure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+04
500A
1kA
M1102NC500-600
Issue 1
100% Du ty Cycle
THs = 55°C
1.00E+05
1.00E+04
500A
1kA
M1102NC500-600
100% Duty Cycle
Issue 1
THs = 85°C
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2kA
3kA
4kA
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2kA
3kA
4kA
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 11 - Square wave energy per pulseFigure 12 - Square wave energy per pulse
1.00E+05
1.00E+04
500A
1kA
M1102NC500-600
Issue 1
di/dt =100A/µs
THs=55°C
100% Duty Cycle
1.00E+05
1.00E+04
500A
M1102NC500-600
di/dt =500A/µs
100% Duty Cycle
Issue 1
THs = 55°C
2kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 8 of11November, 2002
3kA
4kA
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1kA
2kA
3kA
4kA
1.00E-051.00E- 041.00E-031.00E-02
Pulse width (s)
Page 9
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Figure 13 - Square wave frequency vs. pulse widthFigure 14 - Square wave frequency vs. pulse width
1.00E+05
500A
M1102NC500-600
Issue 1
di/dt =100A/µs
THs = 85°C
1.00E+05
M1102NC500-600
Issue 1
di/dt =500A/µs
THs = 85°C
1.00E+04
1kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
2kA
3kA
4kA
Pulse width (s)
100% Duty Cycle
1.00E+04
500A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1kA
2kA
3kA
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
100% Duty Cycle
Figure 15 - Square wave frequency vs. pulse widthFigure 16 - Square wave frequency vs. pulse width
1.00E+03
1.00E+03
1.00E+02
1.00E+01
4kA
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00 E-041.00E-031.00E-02
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 9 of11November, 2002
1kA
2kA
500A
3kA
Pulse width (s)
Tj = 125°C
di/dt =100A/µs
M1102NC500-600
Issue 1
1.00E+02
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00 E-041.00E-031.00E-02
4000A
3000A
2000A
1000A
500A
Pulse width (s)
di/dt =500A/µs
M1102NC500-600
Issue 1
Tj = 125°C
Page 10
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Figure 17 – Maximum surge and I2t ratings
100000
(A)
FSM
M1102NC500-600
Issue 1
Tj (initial) = 125°C
10000
Total peak half sine surge current - I
1000
13510151050100
Duration of surge (ms)Duration of surge (cycles @ 50Hz)
I2t: V
RRM
I2t: VR=60% V
I
: V
FSM
RRM
I
: VR=60% V
FSM
≤
≤
10V
RRM
10V
RRM
1.00E+07
1.00E+06
1.00E+05
2
2
s)
t (A
Maximum I
Figure 18 – Transient thermal impedance
0.1
M1102NC500-600
Issue 1
0.01
0.001
Thermal impedance (K/W)
0.0001
0.00010.0010.010.1110100
SSC 0.044K/W
DSC 0.022K/W
Time (s)
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1Page 10 of11November, 2002
Page 11
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Outline Drawing & Ordering Information
ORDERING INFORMATION(Please quote 10 digit code as below)
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any ti me without prior
notice.
Devices with a suffix code (2-letter or letter/digit/l etter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.