1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 1 of 11May, 2004
initial.
j
below 25°C.
j
Page 2
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Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
--1.5I
--1.9I
Threshold voltage--1.125V
Slope resistance--0.314
Maximum forward recovery voltage
--10di/dt = 1000A/µs, 25°C
--15di/dt = 1000A/µs
Peak reverse current--100Rated V
Recovered charge-85-µC
Recovered charge, 50% Chord-5070µC
Reverse recovery current-55-A
Reverse recovery time, 50% Chord-1.9-
Thermal resistance, junction to heatsink
--0.033 Double side cooled
--0.066 Single side cooled
=1200A
FM
=2200A
FM
RRM
I
=1000A, tp=1000µs, di/dt=60A/µs,
FM
V
=50V, 50% Chord.
r
V
mΩ
V
mA
µs
K/W
FMounting force10-20kN
W
Weight-340-g
t
Notes:-
1) Unless otherwise indicated T
=125°C.
j
2) For other clamp forces consult factory.
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 2 of 11May, 2004
Page 3
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage GradeV
1010001100700
1212001300810
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
RRM
(V)
V
RSM
(V)
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
V
dc
R
(V)
(ii) Qrr is based on a 150µs integration time.
s
µ
150
I.e.
(iii)
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 3 of 11May, 2004
=
FactorK=
dtiQ
.
rrrr
∫
0
t
1
t
2
Page 4
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f
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
)(
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
thJK
The total dissipation is now given by:
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
)()(
[]
fEWW
⋅+=
RfkETT⋅+⋅−=
thJKMAXJSINK
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 4 of 11May, 2004
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
Page 5
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7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
4
2
00
2
I
=
AV
Where VT0 =1.125V, rT = 0.314mΩ
2
rff
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
ff = form factor (normally unity for fast diode applications)
∆
T
W
The forward characteristic I
(i) the well established V
((iiii))
=
AV
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
R
th
TTT
−=∆
)(
7.2 Calculation of V
terms of I
given below:
F
KMAXj
using ABCD Coefficients
F
Vs VF, on page 6 is represented in two ways;
F
and rT tangent used for rating purposes and
T0
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
in
F
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
that plotted.
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
agree with the true device characteristic over a current range, which is limited to
F
25°C Coefficients125°C Coefficients
A
B
C
D
0.565772060.268593363
0.096512780.1040178
1.1344×10
5.96451×10
-4
-3
9.26314×10
0.01104918
-5
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 5 of 11May, 2004
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Curves
Figure 1 – Forward characteristics of Limit deviceFigure 2 – Maximum forward recovery voltage
100
(V)
FRM
M1080LC100-120
Issue 1
125°C
25°C
(A)
FM
10000
M1080LC100-120
Issue 1
25°C
125°C
1000
Instantaneous forward current - I
100
00.511.522.533.5
Maximum instantane ous forward voltage - V
Figure 3 - Recovered charge, Q
1000
M1080LC100-120
Issue 1
Tj = 125°C
(µC)
rr
10
Maximum forward recovery voltage - V
1
(V)
FM
rr
2000A
1500A
1000A
500A
Figure 4 - Recovered charge, Qra (50% chord)
10100100010000
Rate of rise of forward cu rrent - di/dt (A/µs)
1000
M1080LC100-120
Issue 1
Tj = 125°C
(µC)
ra
2000A
1500A
1000A
500A
100
Total recovered charge - Q
10
1101001000
Commutation rate - di/dt (A/µs)
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 6 of 11May, 2004
100
Recovered charge - Q
10
1101001000
Commutation rate - di/dt (A/µs)
Page 7
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Figure 5 - Maximum reverse current, I
1000
M1080LC100-120
Issue 1
Tj = 125°C
(A)
rm
100
Reverse recovery current - I
10
1101001000
Commutation rate - di/dt (A/µs)
rm
2000A
1500A
1000A
500A
Figure 6 - Maximum recovery time, trr (50% chord)
10
M1080LC100-120
Issue 1
Tj = 125°C
(µs)
rr
Recovery time - t
2000A
1500A
1000A
500A
1
1101001000
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulseFigure 8 - Sine wave energy per pulse
1000
M1080LC100-120
Issue 1
Tj = 125°C
=400V
V
r
No snubber
(mJ)
r
Energy per pulse - E
100
110100100010000
Commmutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
1.00E+03
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
M1080LC100-120
Issue 1
Tj = 125°C
4000A
2000A
1500A
1000A
500A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 7 of 11May, 2004
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Figure 9 - Sine wave frequency vs. pulse widthFigure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+04
500A
1000A
1500A
2000A
M1080LC100-120
100% Duty Cycle
Issue 1
TK = 55°C
1.00E+05
1.00E+04
500A
1000A
1500A
M1080LC100-120
100% Duty Cycle
Issue 1
TK = 85°C
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
4000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2000A
4000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 11 - Square wave energy per pulseFigure 12 - Square wave energy per pulse
1.00E+05
1.00E+04
500A
1000A
M1080LC100-120
Issue 1
di/dt =100A/µs
100% Duty Cycle
TK=55°C
1.00E+05
1.00E+04
500A
M1080LC100-120
di/dt =500A/µs
100% Duty Cy cle
Issue 1
TK = 55°C
1500A
2000A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 8 of 11May, 2004
4000A
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-051.00 E-041.00E-031.00E-02
Pulse width (s)
1000A
1500A
2000A
4000A
Page 9
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Figure 13 - Square wave frequency vs. pulse widthFigure 14 - Square wave frequency vs. pulse width
1.00E+05
500A
M1080LC100-120
Issue 1
di/dt =100A/µs
TK = 85°C
1.00E+05
M1080LC100-120
Issue 1
di/dt =500A/µs
TK = 85°C
1.00E+04
1000A
1500A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
100% Duty Cycle
4000A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
500A
1000A
4000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
100% Duty Cycle
1500A
2000A
Figure 15 - Square wave frequency vs. pulse widthFigure 16 - Square wave frequency vs. pulse width
1.00E+02
M1080LC100-120
Issue 1
di/dt =100A/µs
Tj = 125°C
1.00E+02
M1080LC100-120
Issue 1
di/dt =500A/µs
Tj = 125°C
1.00E+01
1.00E+01
4000A
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 9 of 11May, 2004
2000A
1500A
1000A
500A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Energy per pulse (J)
1.00E+00
1.00E-01
4000A
2000A
1500A
1000A
500A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Page 10
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Figure 17 – Maximum surge and I2t ratings
100000
(A)
FSM
10000
Total peak half sine surge current - I
1000
M1080LC100-120
Issue 1
Tj (initial) = 125°C
I2t: V
RRM
I2t: VR=60% V
I
: V
FSM
I
: VR=60% V
FSM
RRM
≤
≤
10V
10V
13510151050100
Duration of surge (ms)Duration of surge (cycles @ 50Hz)
RRM
RRM
1.00E+07
1.00E+06
1.00E+05
2
2
s)
t (A
Maximum I
Figure 18 – Transient thermal impedance
0.1
M1080LC100-120
Issue 1
0.01
0.001
Thermal impedance (K/W)
0.0001
0.00010.0010.010.1110100
SSC 0.066K/W
DSC 0.033K/W
Time (s)
Data Sheet. Types M1080LC100 to M1080LC120 Issue 1Page 10 of 11May, 2004
Page 11
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Outline Drawing & Ordering Information
ORDERING INFORMATION(Please quote 10 digit code as below)
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves 7he right to change specifications at any ti me without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.