Datasheet M1022LC120, M1022LC200 Datasheet (Westcode Semiconductors)

Soft Recovery Diode

Type M1022LC120 to M1022LC200

Absolute Maximum Ratings

Date:- 6 Jul, 2004

Data Sheet Issue:- 1

(Old Type No.: SM02-18CXC724)

VOLTAGE RATINGS

V

RRM

V

RSM

Repetitive peak reverse voltage, (note 1) 1200-2000 V
Non-repetitive peak reverse voltage, (note 1) 1300-2100 V

OTHER RATINGS

I

F(AVM)

I

F(AVM)

I

F(AVM)

I

F(RMS)

I

F(d.c.)

I

FSM

I

FSM2

I2tI
I2t
T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T

=100°C, (note 3) 260 A

sink

Nominal RMS forward current, T
D.C. forward current, T

=25°C, (note 4) 1687 A

sink

Peak non-repetitive surge tp=10ms, VRM=60%V

=55°C, (note 2) 1022 A

sink

=100°C, (note 2) 467 A

sink

=25°C, (note 2) 2060 A

sink

, (note 5) 14.0 kA

RRM

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

2

t capacity for fusing tp=10ms, VRM=60%V

2

t capacity for fusing tp=10ms, VRM≤10V, (note 5)

I

, (note 5) 0.98×10

RRM

Operating temperature range -40 to +125 °C
Storage temperature range -40 to +125 °C

below 25°C.

j

initial.

j

MAXIMUM

LIMITS

MAXIMUM

LIMITS

15.4 kA

6

1.19×10

6

UNITS

UNITS

A2s
A2s

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 1 of 11 July, 2004

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

V
r

V

I
Q
Q
I
t

R

FM

T0

T

FRM

RRM

rr

ra

rm

rr

thJK

Maximum peak forward voltage

--1.7I

- - 1.85 I
Threshold voltage - - 1.24 V
Slope resistance - - 0.33

Maximum forward recovery voltage

- - 15 di/dt = 1000A/µs, Tj=25°C

- - 40 di/dt = 1000A/µs
Peak reverse current - - 100 Rated V
Recovered charge - 375 - µC
Recovered charge, 50% Chord - 140 175 µC
Reverse recovery current - 95 - A
Reverse recovery time, 50% Chord - 3.0 -

Thermal resistance, junction to heatsink

- - 0.033 Double side cooled

- - 0.066 Single side cooled

=1400A

FM

=2050A

FM

RRM

I

=1000A, tp=1000µs, di/dt=60A/µs,

FM

V

=50V, 50% Chord.

r

V

mΩ

V

mA

µs

K/W

F Mounting force 10 - 20 kN
W

Weight - 340 - g

t

Notes:-

1) Unless otherwise indicated T

=125°C.

j

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 2 of 11 July, 2004

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table Voltage Grade V

12 1200 1300 820
14 1400 1500 930
16 1600 1700 1040
18 1800 1900 1150
20 2000 2100 1250

2.0 De-rating Factor

A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.

3.0 ABCD Constants

These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:

where IF = instantaneous forward current.

4.0 Reverse recovery ratings

RRM

(V)

V

RSM

(V)

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

V

dc

R

(V)

(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.

(ii) Qrr is based on a 150µs integration time.

s

µ

150

I.e.

(iii)

=

FactorK =

dtiQ

.

rrrr

∫

0

t

1

t

2

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 3 of 11 July, 2004

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5.0 Reverse Recovery Loss

The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse

voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:

)(

Where k = 0.2314 (°C/W)/s

E

= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.

R

The total dissipation is now given by:

This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:

amplitude forward current.

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.

= d.c. thermal resistance (°C/W)

th(J-Hs

originaltot

NOTE 1 - Reverse Recovery Loss by Measurement

(a) AC coupled devices such as current transformers are not affected by prior passage of high

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

[]

fEWW

)()(

⋅+=

RfkETT ⋅+⋅−=

thJKMAXjSINK

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:

2

R

Where: Vr= Commutating source voltage

6.0 Snubber Components When selecting snubber components, care m ust be taken not to us e excessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber dis charge current. If required, please cons ult
the factory for assistance.

V

⋅= 4

C

R = Snubber resistance

r

di

C

⋅

dt

S

= Snubber capacitance

S

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 4 of 11 July, 2004

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7.0 Computer Modelling Parameters

7.1 Device Dissipation Calculations

I

=

AV

00

2

Where VT0 = 1.24V, rT = 0.33mΩ

4

2

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTTT

ff = form factor (normally unity for fast diode applications)

∆

T

W

The forward characteristic I
(i) the well established V

((iiii))

=

AV

a set of constants A, B, C, and D forming the coefficients of the representative equation for V

R

th

TTT

−=∆

)(

7.2 Calculation of V

terms of I

given below:

F

kMAXj

using ABCD Coefficients

F

Vs VF, on page 6 is represented in two ways;

F

and rT tangent used for rating purposes and

T0

IDICIBAV ⋅+⋅+⋅+= )ln(

FFFF

in

F

The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
which is limited to that plotted.

A

B
C
D

8.0 Frequency Ratings The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maxim um ratings

shown on page 1.

9.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

10.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

agree with the true device characteristic over a current range,

F

25°C Coefficients 125°C Coefficients

0.984151 0.704986

0.053377 0.077106

8.09976×10

7.904892×10

-5

-3

1.018276×10

7.854346×10

-4

-3

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 5 of 11 July, 2004

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Curves

Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage

10000

M1022LC120-200

Issue 1

1000

M1022LC120-200

Issue 1

(A)

FM

1000

Instantaneous forward current - I

100

00.511.522.53

Maximum instantaneous forward voltage - V

Figure 3 - Recovered charge, Q

10000

M1022LC120-200

Issue 1

Tj = 125°C

(V)

FRM

25°C125°C

(V)

FM

rr

100

10

Maximum forward recovery voltage - V

1

10 100 1000 10000

Rate of rise of forward current - di/dt (A/µs)

Figure 4 - Recovered charge, Qra (50% chord)

1000

M1022LC120-200

Issue 1

Tj = 125°C

125°C

25°C

2000A
1500A
1000A
500A

(µC)

rr

2000A
1500A

1000

Total recovered charge - Q

100

1 10 100 1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 6 of 11 July, 2004

1000A

500A

(µC)

ra

100

Recovered charge - Q

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

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Figure 5 - Maximum reverse current, I

1000

M1022LC120-200

Issue 1

Tj = 125°C

(A)

rm

100

Reverse recovery current - I

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

rm

2000A
1500A
1000A
500A

Figure 6 - Maximum recovery time, trr (50% chord)

10

(µs)

rr

Recovery time - t

1

1101001000

Commutation rat e - di/dt (A/µs)

M1022LC120-200

Issue 1

Tj = 125°C

2000A
1500A
1000A
500A

Figure 7 – Reverse recovery energy per pulse Figure 8 - Sine wave energy per pulse

1000

M1022LC120-200

Issue 1

Tj = 125°C
V

=67%V

r

RRM

0.1µF, 10Ω Snubber

(mJ)

r

100

Energy per pulse - E

10

1 10 100 1000

Commmutation rate - di/dt (A/µs)

2000A
1000A

500A
250A

1.00E+02

1.00E+01

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

M1022LC120-200

Issue 1

Tj = 125°C

3000A
2000A
1500A
1000A

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 7 of 11 July, 2004

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A

A

A

A

A

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Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width

1.00E+05

M1022LC120-200

Issue 1

TK = 55°C

1.00E+05

M1022LC120-200

Issue 1

TK = 85°C

500A

1.00E+04

1000A

1500A

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

2000A

3000A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

Pulse widt h (s )

500A

1000A

1500A

2000A

3000A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

100% Duty Cycle

Pulse width (s)

Figure 11 - Square wave energy per pulse Figure 12 - Square wave energy per pulse

1.00E+03

1.00E+02

M1022LC120-200

Issue 1

di/dt =100A/µs
Tj = 125°C

1.00E+02

1.00E+01

M1022LC120-200

Issue 1

di/dt =500A/µs
Tj = 125°C

3000
2000
1500
1000

500

1.00E+01

Energy per pulse (J)

3000A

1.00E+00

1.00E-01

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 8 of 11 July, 2004

2000A

1500A

1000A

500A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Energy per pulse (J)

1.00E+00

1.00E-01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

500A

1000A

M1022LC120-200

Issue 1

di/dt =100A/µs

100% Duty Cycle

TK=55°C

1.00E+05

1.00E+04

500A

M1022LC120-200

di/dt =500A/µs

100% Duty Cycle

Issue 1

TK = 55°C

1500A

2000A

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

3000A

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1000A

1500A

2000A

3000A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency vs. pulse width Figure 16 - Square wave frequency vs. pulse width

1.00E+05

1.00E+04

500A

1000A

M1022LC120-200

Issue 1

di/dt =100A/µs

TK = 85°C

100% Duty Cycle

1.00E+05

1.00E+04
500A

M1022LC120-200

Issue 1

di/dt =500A/µs

TK = 85°C

100% Duty Cycle

1500A

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 9 of 11 July, 2004

2000A

3000A

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1000A

1500A

2000A

3000A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

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Figure 17 – Maximum surge and I2t ratings

100000

(A)

FSM

10000

Total peak half sine surge curr ent - I

1000

M1022LC120-200

Issue 1

Tj (initial) = 125°C

I2t: V

RRM

≤10V

I2t: VR=60% V

I

: V

FSM

RRM

I

: VR=60% V

FSM

≤10V

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

RRM

RRM

1.00E+07

1.00E+06

1.00E+05

s)

2

t (A

2

Maximum I

Figure 18 – Transient thermal impedance

0.1

M1022LC120-200

Issue 1

0.01

0.001

Thermal impedance (K/W)

0.0001

0.0001 0.001 0.01 0.1 1 10 100

SSC 0.066K/W

DSC 0.033K/W

Time (s)

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 10 of 11 July, 2004

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Outline Drawing & Ordering Information

ORDERING INFORMATION (Please quote 10 digit code as bel ow)





M1022 LC

Fixed

Type Code

Order code: M1022LC120 – 1200V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.

In the interest of product improvement, Westcode reserves 7he right to change specifications at any time without prior
notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.

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An IXYS Company

Fixed

outline code

, 27.0mm clamp height capsule.

RRM

www.westcode.com

www.ixys.com



Voltage code

/100

V

DRM

12-20

0

Fixed code

Westcode Semiconductors Ltd

Langley Park Way, Langl ey Park,

Chippenham, Wi l tshire SN15 1GE.

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© Westcode Semiconductors Ltd.

Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 11 of 11 July, 2004