Datasheet M0371YH350, M0371YH450 Datasheet (Westcode Semiconductors)

Soft Recovery Diode

Types M0371YH350 to M0371YH450

The data sheet

on

the subsequent pages of this document is a scanned copy of existing

data for this product.

(Rating Report 93NR4

Issue

This data reflects the old part number for this product which

number must

NOT be used for ordering purposes - please use the ordering particulars

detailed below.

The limitations of this data are as follows:

Device no longer available for grades

Please use the following link to view

an

30

to

34

(3000V to 3400V V

up

to

date outline drawing for this device

Outline W3

Where any information

on

the product matrix page differs from that

the product matrix must be considered correct

An electronic data sheet for this product

For further information

on

this product, please contact your local ASM or distributor.

is

presently

Alternatively, please contact Westcode as detailed below.

1)
is:

SM30-45HXC164. This part

)

RRM

in

the following data,

in

preparation.

M0371

Fixed Type Code

Typical Order Code:

IXYS

Semiconductor

Edisonstra[\e
D-68623 Lampertheim
Tel:

+496206
Fax: [phone]
E-mail: [e-mail]

IXYS

Corporation

3540 Bassett Street
Santa Clara
Tel:

Fax:
E-mail: [e-mail]

The
permission

In

the interest

Devices with a suffix
and limits contained in this report

CA 95054 USA

+1

[phone]

+1

[phone]

information contained herein is confidential and is protected by

of

and in the

of

product improvement,

GmbH

15

503-0

manner

permitted by the proprietors West code Semiconductors Ltd,

code

(2-letter, 3-Jet!er or letter/digitl!etter combination) added to

Fixed

~Jl0371YH400,

Westcode

reserves the right to change specifications

Ordering Particulars

YH

Voltage code

Outline Code

26mm clamp height,

An

[iIXYS

Company

www.westcode.com

www.ixys.com

Copyright

The information may not be used or disclosed except

their

at

any time 'Nithout prior notice

generic code are not necessarily subject

V

RRM

••

/100

35-45

4000V

V

RRM

wHh

to

0

Fixed Code

Westcode

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: WSLsalesri1Jwestcode.com

Westcode

E-mail:

the written

the condItions

Semiconductors

Tel: [phone]

Fax: +44

Long Beach CA

WSI

(0) 1249 659448

Semiconductors

3270 Cherry Avenue

Tel:

+1

Fax:

+1

sales@westcodecom

© West code Semiconductors Ltd

Ltd

Inc

90807
[phone]
[phone]

USA

II

Page

Issue

QUALITY AND EVALUATION LABORATORY

1

II

Rating
Origin:

Written

30

voltage

capsule.

Ratings
Voltage
V

RSM

V

RRM

IP(rms) T
Ip

Report

Q.E.L.

by:

mm

gate

Grades

Single

Double

Single

HS

T

HS

No: 93NR4

(0\

M.J.

Silicon

turn-off

= 25°C

= 25°C

Diode

.--=r:

~.fi~~'

Perry

with

phase:

Side

Cooled

Side

Cooled

low

thyristor

50

Hz,

Double

Capsule

Checked:

recovered

180°

T

HS

THS

Type:

applications;

half

= 55°C,

= 100nC

side

cooled

Date:
Pages:

SM30-4SHXC164

M

gJ.....er

charge

sinewave;

10~C

for

16th

snubber

housed

(Converter

25

in

June,

duties

a

high

30-45
3100-4600V
3000-4500V

Ratings)

364A;
147A

678A
597A

1993

in

voltage

high

239A

IpSM : t =

t

I2t

I2t

2

r

T

HS

T

stg

t

t

t =

t

Operating

:

Non-operating

10ms

10ms

10ms;

10ms;

3ms;

Range

half

sinewave;

half

sinewave;

(initial)

TJ

TJ (initial)

(initial)

TJ

V

RM

TJ (initial)

= O. 6V

TJ (initial)

lSO°C;

lsoaC;

RRM(MAX)

lSO°C;

V

V

VRM

RM

RM

<
<

'"

150°C

IS0°C

O. 6V

10V

10V

RRM

(MAX)

4900A

5400A

x

X

to
to

103A2S

103A2S

+150°C

+150°C

120

146

110 X 103A2S

-40

-40

Characteristics

- 2 -

R.R.
R.R.
Page

No.
Issue
Issue

93NR4

1
1

(Maximum

rg

A T

B T

C

D T

A

B

C

D

V

Rth(J-HS)

IRRM
Vfr

pM

J

J

TJ 25°C

J

at

:

:

values

25°C

25°C

=

rpM

Double

Single

at

at

dI/dt

25°C

unless

63SA

=

side

side

VRRM(MAX)

lOOOA/ps

cooled

cooled

otherwise

stated)

1.0SV

1.6Smohms

0.171044306

0.203488535

7.4078071E-4

1.

50068853E-2

0.125659408

0.109853554

7.39508871E-4

3.11942547E-2

2.10V

0.10

K/W

0.20

K/W

SOmA

370V

Reverse

QRR

(total

QRA

(50%

trr

(50%

IRM

Mounting
Outline

JEDEC
NOTE:

recovery

area)

chord)

chord)

Force

Drawing
Outline
All

characteristics

unless

No.

stated

at

rpM = 1000A;

diR/dt

otherwise.

=

are

tp = sOOps:

200A/uS;

at

TVJ

V

RM

TJmax

=

SOV

operating

1s60pC

640pC

3.3ps

400A

330-550
100A317

Kgf

CONTENTS
Ratings

and

characteristics

- 3 -

R.R.
R.R.
Page

No.

Issue
Issue

93NR4
1
1

Page
1,

2

Voltage

2.

Introduction

3.

Notes

(a)
(b)
(c)
(d)

4.

Reverse

(a)
(b)

Limit

forward

Transient
Surge

rating

Forward
Recovered
Reverse

grade

on

table

the

Square
Energy
ABCD

Reverse

Recovery
Determination
Determination

characteristic

thermal

recovery

charge

recovery

Ratings

wave

per

constants

Recovery

impedance

voltage

current

ratings

pulse

Loss

characteristics

Ratings

by

Measurement

without

Measurement

10

11

12,

14

4

5

5
5
5
5

6
6
8
9

13

Reverse

Square
Square
Square

Square
Energy
Energy
Sine
Sine
Sine
Outline

wave

wave

wave
wave
per

per
wave
wave
wave

recovery

frequency
frequency
frequency

frequency
pulse
pulse

frequency
frequency
energy

drawing

energy

100A/jiS
SOOA/!1S

rating
rating

per

pulse

per
rating
rating
rating
rating

pulse

55°C
55°C
85°C
85°C

55°C
85°C

Sink
Sink
Sink
Sink

Sink
Sink

100A/jiS
SOOA/jiS
lOOA/!1
500A/!1

15
16

17
S
S

18

19

20

21

22

23

24

25

- 4 -

R.R.

No. 93NR4

R.R.

Issue

Page

Issue

1
1

Voltage

Ratings

Voltage

30
32
34
36
38
40
42

44
45

Class

V

RRM

V

RSM

V
3000
3200
3400
3600
3800
4000
4200
4400

3100
3300
3500
3700

3900

4100

4300
4500

4500 4600

V

1.

2.

This

Report

has

been

A

blocking

applicable

is

agreed

voltage

to

applicable

by

Sales/Production.
derating

this

device

to

for

higher

factor

TJ below

or

of

lower

0.13%
25°C.

voltage

per

deg.

grades

Celsius

when

is

supply

- 5 -

R.R.

No. 93NR4

R.R.

Issue
Issue

Page

1
1

2.0

diffused

INTRODUCTION

The

diode

silicon

characteristics.

SCR

snubber

3.0

NOTES

(a)

(b)

(c)

series

slices.

These

networks.

ON

THE

RATINGS
Sguare
These

forward
Energy
These

obtained

Let:

Then

TSlNK = TJ(MAX)

ABCD

These

wave

ratings

current

per

curves

for

Ep

be

in

joules,

WAY = Ep

Constants

constants
characteristic
for

the

forward

comprises

diodes

ratings

are

pulse

enable
conditions

the

Energy

x f

-

(Ep

on

All

these

are

particularly

given

of

for

100A/~S

characteristics

rapid

not

per

and f be

x f x

(applicable

fast

page

8)

characteristic

recovery

diodes

have

leading

and

500A/~S.

estimation

covered

pulse

~hJ-HS)

the

only

are

for a given

repetition

over

the

given

capsule

controlled

suitable

edge

linear

of

device

by

the

rate.

current

co-efficients

below:

devices

for

use

rates

dissipation

frequency

current

range

of

reverse

in

ratings.

and

of

the

with

recovery

G.T.O.

of

rise

to

pulse

V

F

expression

all
and

of

be

width

(d)

V

= A + B

F

current.
Reverse

(i)

QRA

ln

recovery

is

based

(iF)

+ C

ratings

on

50%

iF

+

IRM

DJ

iF : where

chord

as

iF = instantaneous

shown

below.

forward

- 6 -

R.R.
R.R.
Page

No.
Issue
Issue

93NR4
1
1

4.0

include

(ii)

(iii)

Reverse

The

Recovery

following

reverse

(a)

Determination

From

shunt

(see
instantaneous
the

area

temperature

TSINK
where

t

A

f

(new) = TSINK

r

t

duration

Area

Rated

is

QRR

Le.

K

factor

procedure

recovery

waveforms

Note

reverse

under

can

3.30E-6

of

under

frequency

based

QRR

Loss

by

1)

this

then

reverse

reverse

on

=

tdt2

is

loss.

measurement

of

recovery

and

reverse

recovery

waveform

be

evaluated

(or

ig

inal

x t

recovery

loss

at

the

a

1S0uS

integration

1S0uS

iRR

J

t 0

recommended

current
voltage
loss

be A joules

from:

-

A(

)

Tt

( t

(K/W)

loss

waveform

original

dt

for

obtained

present

waveform

per

6

x

10

per

per

pulse

sink

temperature.

use

+

pulse

time

where

from a high

during
must
pulse.

R

thJ-HS

in

in

it

is

recovery,

be

constructed.
A

new

X f

microseconds.

joules

(W.S.)

necessary

frequency

sink

to

an

Let

The

total

W(TOT)

(b)

current

A

Let E be
p1S)

Let f be

then
where

TSINK

==

W(oTiginal) + A x f

Determination
In

circumstances
conditions,

in

joules

.

TSINK new

TSINK new

original

the

the

ratings.
A

suitable

restrict

(VRM)

of

the

0.67

If a different
Grade,
of

the

the
maximum

dissipation

may

be

value

operating

==

is

is

the

R-C

snubber

transient

of

grade

reverse

value

without

estimated
of

TSINK

the

heat

the

loss

is

where

or

for

energy

frequency

original

required

sink

network
reverse

maximum

is

being
may

obtained

now

given

Measurement

it

is

design

from
per

- (E X

maximum

temperature

grade.

used

be

from

by

not

possible
purposes,
curves

reverse

in

Hz

Rth

X

f)

heat

is

connected

voltage

or

waveform

V

RM

approximated

the

curves

on

cycle

given

is

to
the
page

measure

additional

15.

in

sink

temperature

with

across

to a peak

lower

by a pro

provided.

joules

the

the

than

rata

voltage

losses

(curves

frequency

diode

value

0.67
adjustment

and

on

and

to

of

NOTE

- 7 -

No.

R.R.
R.R.

Page

Issue

Issue

93NR4

1
1

1

Reverse

current.

Recovery

This

(a)

(b)

(c)

anode

Loss

device
When

a.c.

by
A

input

has a low

measuring

coupled

prior

suitable,

of

internal

current

signal.

Measurement

an

appropriate

to

cathode.

by

Measurement

the

devices

passage

polarised,

the

measuring

amplifiers

of

reverse

snubber

reverse

charge

of

high

by

recovered

care

such

as

amplitude

clipping
oscilloscope
the

recovery

of

O.5~F,

must

current

circuit

relatively

waveform

2.2ohms

charge

be

taken

transformers

forward

to

avoid

high

and

peak

current.

must

amplitude

should

connected

reverse

to

ensure

are

be

connected

overloading

be

carried

across

recovery

that:

not

affected

the

forward

out

to

the

with

diode

,....,

(f}

W

0:

W

Q.

L

<t

f--

Z

W

0:
0:

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0

0:

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~

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0

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:J

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f-­Z

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(f}

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3000

2000

1000

700

500

50

DC

/

FORWARD

/

L

V

/

I

I

/

/

V

/

/

I

OF

V

L /

II

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CHARACTERISTIC

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DEVICE

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