A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the
coefficients of the expression for the forward characteristic given below:
RRM
(V)
)ln(
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
V
RSM
(V)
V
dc
R
(V)
IDICIBAV
⋅+⋅+⋅+=
FFFF
(ii) Qrr is based on a 150µs integration time.
µ
s
150
I.e.
(iii)
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 3 of 11June, 2004
=
FactorK
dtiQ
.
rrrr
∫
0
t
1
=
t
2
Page 4
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery
loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then
be evaluated from:
An IXYS Company
Soft Recovery Diode Types M0310YH300 to M0310YH350
)(
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
f
= Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
thJK
The total dissipation is now given by:
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring
oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current
signal.
)()(
[]
fEWW
⋅+=
RfkETT
⋅+⋅−=
thJKMAXJSINK
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of
this snubber is shown below:
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of
snubber capacitor or excessively small values of snubber resistor. Such excessive component values
may lead to device damage due to the large resultant values of snubber discharge current. If required,
please consult the factory for assistance.
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 4 of 11June, 2004
4
V
⋅=
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
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7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
An IXYS Company
Soft Recovery Diode Types M0310YH300 to M0310YH350
4
I
=
AV
00
2
V
Where
ff
= form factor (normally unity for fast diode applications)
=1.49V,
T0
∆
W
AV
=
R
7.2 Calculation of V
The forward characteristic I
(i) the well established V
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
((iiii))
in terms of IF given below:
T
th
r
T
−=∆
)(
= 2.06m
TTT
Ω
KMAXj
using ABCD Coefficients
F
Vs VF, on page 6 is represented in two ways;
F
and rT tangent used for rating purposes and
T0
2
2
rff
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
⋅+⋅+⋅+=
)ln(
IDICIBAV
FFFF
F
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
that plotted.
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum
ratings shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included
as parallel to the first.
agree with the true device characteristic over a current range, which is limited to
F
25°C Coefficients125°C Coefficients
A
B
C
D
-0.32750255
0.4905669
1.217811×10
-0.02221939
A
B
-3
C
D
0.05657035
0.2226933
8.020901×10
0.03162494
-4
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 5 of 11June, 2004
Page 6
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An IXYS Company
Soft Recovery Diode Types M0310YH300 to M0310YH350
Curves
Figure 1 – Forward characteristics of Limit deviceFigure 2 – Maximum forward recovery voltage
10000
M0310YH300-350
Issue 1
1000
M0310YH300-350
Issue 1
150°C
25°C
(A)
FM
1000
Instantaneous forward current - I
100
02468
150°C25°C
Maximum instantaneous forward vo ltage - VFM (V)
Figure 3 - Recovered charge, Q
1000
M0310YH300-350
Issue 1
Tj = 150°C
100
(V)
FRM
10
Forward recovery voltage - V
1
10100100010000
Rate of rise of forward c urrent - di/dt (A/µs)
rr
2000A
1000A
500A
250A
Figure 4 - Recovered charge, Qra (50% chord)
1000
M0310YH300-350
Issue 1
Tj = 150°C
2000A
1000A
500A
250A
(µC)
rr
100
Total recovered charge - Q
10
1101001000
Commutation rate - di/dt (A/µs)
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 6 of 11June, 2004
, 50% chord (µC)
ra
100
Maximum recovered charge Q
10
1101001000
Commutation rate - di/dt (A/µs)
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Soft Recovery Diode Types M0310YH300 to M0310YH350
Figure 5 - Maximum reverse current, I
1000
M0310YH300-350
Issue 1
Tj = 150°C
(A)
rm
100
Reverse recovery current - I
10
1101001000
Commutation rate - di/dt (A/µs)
rm
2000A
1000A
500A
250A
Figure 6 - Maximum recovery time, trr (50% chord)
10
M0310YH300-350
Issue 1
Tj = 150°C
, 50% Chord (µs)
rr
2000A
1000A
500A
250A
Recovery time - t
1
1101001000
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulseFigure 8 - Sine wave energy per pulse
10000
M0310YH300-350
Issue 1
Tj = 150°C
VR = 67% V
0.25µF, 10
(mJ)
r
1000
Reverse recovered energy loss per pulse - E
100
10100100010000
RRM
Snubber
Ω
Commutation rate - di/dt (A/µs)
2000A
1000A
500A
250A
1.00E+03
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
M0310YH300-350
Issue 1
Tj = 150°C
3000A
2000A
1500A
1000A
500A
250A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 7 of 11June, 2004
Page 8
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Soft Recovery Diode Types M0310YH300 to M0310YH350
Figure 9 - Sine wave frequency vs. pulse widthFigure 10 - Sine wave frequency vs. pulse width
1.00E+05
250A
M0310YH300-350
Issue 1
TK = 55°C
1.00E+05
250A
M0310YH300-350
Issue 1
TK = 85°C
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
500A
1000A
1500A
2000A
3000A
1.00E-051.00E-041.00E-031.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
500A
1000A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1500A
2000A
3000A
1.00E-051.00E-041.00E -031.00 E-02
Pulse width (s)
100% Duty Cycle
Figure 11 - Square wave energy per pulseFigure 12 - Square wave energy per pulse
1.00E+03
M0310YH300-350
Issue 1
di/dt =100A/µ s
Tj = 150°C
1.00E+03
M0310YH300-350
Issue 1
di/dt = 500A/µs
Tj = 150°C
1.00E+02
1.00E+01
3000A
2000A
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1500A
1000A
500A
250A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+02
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-051.00E-041.00E-031.00E-02
3000A
2000A
1500A
1000A
500A
250A
Pulse width (s)
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 8 of 11June, 2004
Page 9
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An IXYS Company
Soft Recovery Diode Types M0310YH300 to M0310YH350
Figure 13 - Square wave frequency vs. pulse widthFigure 14 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
1.00E+03
250A
500A
1000A
1500A
M0310YH300-350
Issue 1
di/dt =100A/µ s
100% Duty Cycle
TK=55°C
1.00E+05
1.00E+04
1.00E+03
250A
500A
M0310YH300-350
di/dt =500A/µ s
100% Duty Cycle
Issue 1
TK = 55°C
Frequency (Hz)
1.00E+02
1.00E+01
2000A
3000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Frequency (Hz)
1.00E+02
1.00E+01
1000A
1500A
2000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 15 - Square wave frequency vs. pulse widthFigure 16 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
250A
500A
M0310YH300-350
di/dt =100A/µ s
100% Duty Cycle
Issue 1
TK = 85°C
1.00E+05
1.00E+04
250A
M0310YH300-350
Issue 1
di/dt =500A/µ s
100% Duty Cycle
TK = 85°C
500A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 9 of 11June, 2004
1000A
1500A
2000A
3000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+03
Frequency (Hz)
1000A
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
1500A
2000A
Pulse width (s)
Page 10
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Figure 17 – Maximum surge and I2t ratings
Soft Recovery Diode Types M0310YH300 to M0310YH350
100000
(A)
FSM
M0310YH300-350
Issue 1
Tj (initial) = 150°C
10000
Total peak half sine surge current - I
1000
135 10151050100
Duration of surge (ms)Duration of surge (cycles @ 50Hz)
I2t: V
I
: VR=60% V
FSM
RRM
≤
10V
RRM
I2t: VR=60% V
I
: V
FSM
RRM
≤
RRM
10V
1.00E+06
1.00E+05
1.00E+04
s)
2
t (A
2
Maximum I
Figure 18 – Transient thermal impedance
1
M0310YH300-350
1
I
0.1
0.01
Thermal impedance (°C/W)
0.001
SSC 0.2°C/W
DSC 0.1°C/W
0.0001
0.00010.0010.010.1110100
Time (s)
Data Sheet. Types M0310YH300 to M0310YH350 Issue 1Page 10 of 11June, 2004
Page 11
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An IXYS Company
Outline Drawing & Ordering Information
Soft Recovery Diode Types M0310YH300 to M0310YH350
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.