Maximum average forward current, T
Maximum average forward current. T
Maximum average forward. T
Nominal RMS forward current, T
D.C. forward current, T
Peak non-repetitive surge tp=10ms, VRM=60%V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=60%V
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Operating temperature range-40 to +150°C
Storage temperature range-40 to +150°C
sink
=100°C, (note 3)89A
sink
=25°C, (note 4)365A
=55°C, (note 2)225A
sink
=100°C, (note 2)147A
sink
=25°C, (note 2)421A
sink
, (note 5)2000A
RRM
, (note 5)20.0×10
RRM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
2200A
3
24.2×10
3
UNITS
UNITS
A2s
A2s
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 150°C T
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 1 of 11June, 2004
initial.
j
below 25°C.
j
Page 2
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WESTCODE An IXYS CompanySoft Recovery Diode Types M0225YH300 to M0225YH450
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Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
V
r
V
I
Q
Q
I
t
R
FM
T0
T
FRM
RRM
rr
ra
rm
rr
thJK
Maximum peak forward voltage
Threshold voltage--1.90V
Slope resistance--4.16
Maximum forward recovery voltage
Peak reverse current--50Rated V
Recovered charge-220-µC
Recovered charge, 50% Chord-100130µC
Reverse recovery current-70-A
Reverse recovery time, 50% Chord-3-
Thermal resistance, junction to heatsink
--4.54IFM=635A
--3.80I
=450A
FM
--200di/dt = 1000A/µs, 25°C
--400di/dt = 1000A/µs
RRM
I
=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
FM
50% Chord.
--0.1Double side cooled
--0.2Single side cooled
V
mΩ
V
mA
µs
K/W
FMounting force3.3-5.5kN
W
Weight-140-g
t
Notes:-
1) Unless otherwise indicated T
=150°C.
j
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 2 of 11June, 2004
Page 3
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WESTCODE An IXYS CompanySoft Recovery Diode Types M0225YH300 to M0225YH450
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the
coefficients of the expression for the forward characteristic given below:
where IF = instantaneous forward current.
RRM
(V)
V
RSM
(V)
V
dc
R
(V)
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
I.e.
(iii)
s
µ
150
=
FactorK=
rrrr
∫
0
dtiQ
.
t
1
t
2
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 3 of 11June, 2004
Page 4
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f
WESTCODE An IXYS CompanySoft Recovery Diode Types M0225YH300 to M0225YH450
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5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery
loss.
From waveform s of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new sink tem per ature c an then
be evaluated from:
)(
Where k = 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
= Rated frequency in Hz at the original sink temperature.
R
= d.c. thermal resistance (°C/W)
thJK
The total dissipation is now given by:
originaltot
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered char ge and peak revers e recovery current. W hen m easuring
the charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring
oscilloscope to avoid overloading the internal am plif ier s by the relatively high am plitude f or ward c urr ent
signal.
)()(
[]
fEWW
⋅+=
RfkETT⋅+⋅−=
thJKMAXJSINK
(c) Measurement of reverse recovery waveform s hould be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. T he formula used for the calculation of
this snubber is shown below:
2
R
Where:Vr= Commutating source voltage
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of
snubber capacitor or exces sively small values of s nubber resistor. Such excess ive component values
may lead to device damage due to the large resultant values of snubber discharge current. If required,
please consult the factory for assistance.
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 4 of 11June, 2004
V
⋅= 4
C
R = Snubber resistance
r
di
C
⋅
dt
S
= Snubber capacitance
S
Page 5
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7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
I
=
AV
00
2
Where VT0 =1.9V, rT = 4.16mΩ
4
2
2
rff
⋅⋅
T
WrffVV
⋅⋅⋅++−
AVTTT
ff = form factor (normally unity for fast diode applications)
∆
T
W
The forward characteristic I
(i) the well established V
((iiii))
=
AV
a set of constants A, B, C, and D forming the coefficients of the repres entative equation for V
R
th
TTT
−=∆
KMAXj
)(
7.2 Calculation of V
in terms of IF given below:
F
using ABCD Coefficients
Vs VF, on page 6 is represented in two ways;
F
and rT tangent used for rating purposes and
T0
IDICIBAV⋅+⋅+⋅+=)ln(
FFFF
F
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
range, which is limited to that plotted.
25°C Coefficients150°C Coefficients
A
B
C
D
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maxim um
ratings shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included
as parallel to the first.
-0.985486690.604350122
0.79560590.01967453
3.12049×10
-0.024229470.1197498
agree with the true device characteristic over a current
F
-3
1.245792×10
-3
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 5 of 11June, 2004
Page 6
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Curves
Figure 1 – Forward characteristics of Limit deviceFigure 2 – Maximum forward recovery voltage
10000
M0225YH300-450
Issue 1
10000
M0225YH300-450
Issue 1
(A)
FM
1000
Instantaneous forward current - I
100
024681012
Maximum instantaneous forward voltage - V
Figure 3 - Recovered charge, Q
1000
M0225YH300-450
Issue 1
Tj = 150°C
150°C25°C
(V)
FM
rr
1500A
1000A
550A
300A
(V)
FRM
1000
100
Maximum forward recovery voltage - V
10
10100100010000
Rate of rise of forward current - di/dt (A/µs)
150°C
25°C
Figure 4 - Recovered charge, Qra (50% chord)
1000
M0225YH300-450
Issue 1
Tj = 150°C
2000A
1000A
500A
250A
(µC)
rr
100
Total recovered charge - Q
10
1101001000
Commutation rate - di/dt (A/µs)
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 6 of 11June, 2004
, 50% chord (µC)
ra
100
Maximum recovered charge Q
10
1101001000
Commutation rate - di/dt (A/µs)
Page 7
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Figure 5 - Maximum reverse current, I
1000
M0225YH300-450
Issue 1
Tj = 150°C
100
(A)
rm
10
Reverse recovery current - I
1
1101001000
Commutation rate - di/dt (A/µs)
rm
1500A
1000A
550A
300A
Figure 6 - Maximum recovery time, trr (50% chord)
10
(µs)
rr
Recovery time - t
1
1101001000
Commutation rate - di/dt (A/µs)
M0225YH300-450
Issue 1
Tj = 150°C
1500A
1000A
550A
300A
Figure 7 – Reverse recovery energy per pulseFigure 8 - Sine wave energy per pulse
10
M0225YH300-450
Issue 1
Tj = 150°C
V
=67%V
r
RRM
Ω
0.5µF, 2.2
Snubber
1
(J)
r
Energy per pulse - E
0.1
0.01
110100100010000
Commmutation rate - di/dt (A/µs)
1000A
800A
600A
300A
1.00E+03
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
M0225YH300-450
Issue 1
Tj = 150°C
2000A
1000A
500A
250A
100A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 7 of 11June, 2004
Page 8
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Figure 9 - Sine wave frequency vs. pulse widthFigure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
100A
250A
500A
1000A
M0225YH300-450
100% Duty Cycle
Issue 1
TK = 55°C
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
100A
250A
500A
1000A
M0225YH300-450
100% Duty Cycle
Issue 1
TK = 85°C
1.00E+02
1.00E+01
2000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
1.00E+02
2000A
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Figure 11 - Square wave energy per pulseFigure 12 - Square wave energy per pulse
1.00E+03
1.00E+02
1.00E+01
M0225YH300-450
Issue 1
di/dt =100A/µs
Tj = 150°C
2000A
1.00E+03
1.00E+02
1.00E+01
M0225YH300-450
Issue 1
di/dt =500A/µs
Tj = 150°C
2000A
1000A
500A
250A
100A
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-02
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 8 of 11June, 2004
1000A
500A
250A
100A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-02
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Page 9
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Figure 13 - Square wave frequency vs. pulse widthFigure 14 - Square wave frequency vs. pulse width
1.00E+05
M0225YH300-450
Issue 1
di/dt =100A/µs
TK=55°C
1.00E+05
M0225YH300-450
Issue 1
di/dt =500A/µs
TK = 55°C
100A
1.00E+04
250A
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
500A
1000A
2000A
1.00E-051.00E-041.00E-031.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
100A
250A
500A
1000A
1.00E-051.00E-041.00E-031.00E-02
100% Duty Cycle
Pulse width (s)
Figure 15 - Square wave frequency vs. pulse widthFigure 16 - Square wave frequency vs. pulse width
1.00E+05
1.00E+04
100A
250A
500A
M0225YH300-450
Issue 1
di/dt =100A/µs
TK = 85°C
100% Duty Cycle
1.00E+05
1.00E+04
100A
250A
M0225YH300-450
Issue 1
di/dt =500A/µs
TK = 85°C
100% Duty Cycle
1.00E+03
Frequency (Hz)
1000A
1.00E+02
1.00E+01
1.00E-051.00E-041.00E-031.00E-02
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 9 of 11June, 2004
Pulse width (s)
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
500A
1000A
1.00E-051.00E-041.00E-031.00E-02
Pulse width (s)
Page 10
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Figure 17 – Maximum surge and I2t ratings
10000
(A)
FSM
1000
Total peak half sine surge current - I
100
I2t: V
≤10V
RRM
I2t: VR=60% V
I
: V
RRM
Issue 1
≤10V
FSM
I
: VR=60% V
FSM
Tj (initial) = 150°C
M0225YH300-450
13510151050100
Duration of surge (ms)Duration of surge (cycles @ 50 Hz)
RRM
RRM
1.00E+06
1.00E+05
1.00E+04
s)
2
t (A
2
Maximum I
Figure 18 – Transient thermal impedance
1
M0225YH300-450
Issue 1
0.1
0.01
Thermal impedance (°C/W)
0.001
SSC 0.2°C/W
DSC 0.1°C/W
0.0001
0.00010.0010.010.1110100
Time (s)
Data Sheet. Types M0225YH300 to M0225YH450 Issue 1Page 10 of 11June, 2004
Page 11
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Outline Drawing & Ordering Information
100A317
ORDERING INFORMATION(Please quote 10 digit code as below)
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.