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RF CHARACTERISTICS ( WATTS OUTPUT )
Silicon VDMOS and LDMOS
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
Co200
-65to1506AV V
V
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
dB
%
Relative
20:1
Idq =
Idq =
Idq =
A,
A,
A,
Vds =
V,
Vds =
V,
Vds =
V,
MHz
MHz
MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
171
Mho
Ohm
AmppFVVpFpFmA
uA
Ids =
A,
Vgs = 0V
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
Ids =
Vgs = Vds
Vds = 10V,
Vgs = 5V
Vgs = 20V,
Ids =
Vgs = 20V,
Vds = 10V
28.0
Vds =
V, Vgs = 0V,
F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V,
F = 1 MHz
Vds =
V, Vgs = 0V,
F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
t
TMCoCo
C/W
o
LX803
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
8/31/99
LDMOS
TRANSISTOR
20
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low
feedback and output capacitances
resulting in high F transistors with
high input impedance and high
efficiency.
45Watts Single Ended
Package Style LX2
120Watts 1.25
11
65
2.4
0.35
16.5
55
70 70
1.2
1.2
1.2
0.2
3
28.0
0.3
28.0
28.0
28.0
A,
F = 1000
F = 1000
F = 1000
7.5
90
3
45
28.0
Page 2
LX803 POUT VS PIN F=1000 MHZ; IDQ=1.2A; VDS=28V
POUT VS PIN GRAPH
LX803
ID IN AMPS
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/31/99
50
45
40
35
30
25
20
15
10
0 0.5 1 1.5 2 2.5 3 3.5 4
Efficiency = 60%
PIN IN WATTS
POUT GAIN
15.00
14.00
13.00
12.00
11.00
10.00
L2A 3DIE CAPACITANCE
1000
Ciss
100
Coss
10
1
0 5 10 15 20 25 30
Crss
VDS IN VOLTS
L2B 3 DIE IV
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
VDS IN VOLTS
L2B 3 DICE ID, GM vs VG
100
ID
10
1
0.1
0 2 4 6 8 10 12 14
GM
Vgs in Volts
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
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