Datasheet LX1214E500X Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

LX1214E500X

NPN microwave power transistor

Preliminary specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC15

1997 Feb 18

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

FEATURES

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Interdigitated structure provides
high emitter efficiency

• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Internal input and output
prematching ensures a good
stability and allows an easier
design of wideband circuits.

APPLICATIONS

Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between

1.2 and 1.4 GHz.

DESCRIPTION

QUICK REFERENCE DATA

Microwave performance up to T

MODE OF

V

OPERATIONf(GHz)

Class AB

1.2 to 1.4 24 0.15 typ. 50 typ. 1 1 typ. 50 see Figs 6

=25°C in a common emitter class AB.

mb

I

CE

CQ

(V)

(A)

(CW)

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

handbook, 4 columns

Top view

1

2

P

L1

(W)

33

(dB)

MAM045

G

po

η

(%)

C

Zi; Z

L

(Ω)

and 7

c

b

e

NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with emitter connected to

Fig.1 Simplified outline and symbol.

flange.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

i

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 3V
collector current (DC) − 9A
input power f = 1.2 to 1.4 GHz; VCC= 24 V; class AB − 7W
total power dissipation Tmb=75°C − 70 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

10

handbook, halfpage

I

C

(A)

1

1

10

Tmb≤ 75°C.
(1) Region of permissible DC operation.

Fig.2 DC SOAR.

MLC436

I

V (V)

101

CE

2

10

80

handbook, halfpage

P

tot

(W)

60

40

20

0

0 50 100 200

150

MLC437

o

T ( C)

mb

Fig.3 Power derating curve.

1997 Feb 18 3

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See

“Mounting recommendations in the General part of handbook SC15”

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

V

(BR)CBO

V

(BR)CER

V

(BR)EBO

h

FE

thermal resistance from junction to mounting base Tj= 100 °C 1.3 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W

.

collector cut-off current IE= 0; VCB=20V − 4.5 mA
collector-base breakdown voltage IC=22mA 45 − V
collector-emitter breakdown voltage IC= 150 mA; RBE= 220 Ω 30 − V
emitter-base breakdown voltage IC=22mA 3 − V
DC current gain IC= 4.5 A; VCE= 3 V 15 100

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

f

(GHz)

=25°C in a common-emitter class AB amplifier.

mb

V

(V)

CE

I

CQ

(A)

P

L1

(W)

G

po

(dB)

η

(%)

C

Zi; Z

(Ω)

Class AB (CW) 1.2 to 1.4 24 0.15 typ. 50 typ. 11 typ. 50 see Figs 6

and 7

L

1997 Feb 18 4

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

handbook, full pagewidth

30

4.04.5 6.01.0

2.5

40

0.7 0.7

2.5

3.0

5.0 5.0

C3

5.02.54.5

11.0

10.5

7.0

V

BB

C4

30

8.03.05.0 8.0 1.0 5.0

4.0

V

CC

40

F1

input

C1

The test circuit is split into two independent halves each being 30 × 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr= 10.

L1

Fig.4 Test circuit.

1997 Feb 18 5

L2

C2

MLC470

output

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

handbook, full pagewidth

BIAS CIRCUIT

R1

R2

P1

TR1

D1

D2

C5R3

PREMATCHING TEST

CIRCUIT

V

F1

C4

L2

DUT

MLC727

C3

L1

CC

Fig.5 Class AB bias circuit.

List of components (see Figs 4 and 5)

COMPONENT DESCRIPTION VALUE ORDERING INFORMATION

TR1 transistor, BD239 or equivalent
C1, C2 DC blocking chip capacitor 100 pF ATC 100A1201kp
C3, C4 feedthrough bypass capacitor 1500 pF Erie1250-003
C5 electrolytic capacitor 10 µF, >30 V
D1 diode BY239 or equivalent; note 1
D2 diode BY239 or equivalent; note 2
L1 3.5 turns 0.5 mm copper wire;

internal diameter = 2 mm

L2 3 turns 0.5 mm copper wire;

internal diameter = 2 mm
P1 linear potentiometer 4.7 kΩ
R1 resistor 100 Ω, 0.25 W
R2 resistor 1 kΩ, 0.25 W
R3 resistor 56 Ω, 0.25 W
F1 ferrite bead Philips tube, 12NC = 4330 030 43081

4.2 × 2.2 × 3.2 mm (4B1)

Notes

1. In thermal contact with TR1.

2. In thermal contact with DUT.

1997 Feb 18 6

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

Input and optimum load impedances

= 24 V; ICQ= 0.15 A; typical values at PL=PL1.

V

CE

handbook, full pagewidth

f

(GHz)

Z

(Ω)

i

Z

(Ω)

1.2 1.8 + j2.6 4.0 − j2.2

1.3 4.0 + j2.1 3.8 − j0.5

1.4 3.2 + j1.0 3.2 − j0.5

1

0.5

0.2

+ j

0

– j

0.2

1.2 GHz

Z

i

0.2 0.5 1052

1.3

1.4

2

5

10

∞

10

5

L

VCE= 24V; Zo=10Ω; ICQ= 0.15 A.

Fig.6 Input impedance as a function of frequency; typical values at PL=PL1.

0.5

2

1

MLC445

1997 Feb 18 7

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

handbook, full pagewidth

VCE= 24V; Zo=10Ω; ICQ= 0.15 A.

Fig.7 Optimum load impedance as a function of frequency; typical values at PL=PL1.

1

0.5

0.2

+ j

0

– j

0.2

0.2 0.5 1052

0.5

1.3

1.2

Z

L

1.4 GHz

1

2

5

10

∞

10

5

2

MLC446

1997 Feb 18 8

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

PACKAGE OUTLINE

handbook, full pagewidth

3.3

2.9

0.15 max

3.3

seating plane

8.25

12.85 max

23 max

3.7

max

16.5

6

max

1.6 max

3

9.85
max

MBC881

2.7

min

10.3

10.0

2.7

min

1

2

Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.

Fig.8 SOT439A.

1997 Feb 18 9

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 18 10

Philips Semiconductors Preliminary specification

NPN microwave power transistor LX1214E500X

NOTES

1997 Feb 18 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 75001785