Datasheet LTE42012R Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

LTE42012R

NPN microwave power transistor

Product specification
Supersedes data of June 1992

1997 Feb 21

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Input matching cell improves input impedance and
allows an easier design of wideband circuits.

APPLICATIONS

• Common emitter class-A power amplifiers up to 4.2 GHz
in CW conditions for military and professional
applications.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.

PINNING - SOT440A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

lumns

Top view

Marking code: 198

Fig.1 Simplified outline and symbol.

1

c

b

3

2

MAM131

e

QUICK REFERENCE DATA

Microwave performance up to T

MODE OF OPERATION

=25°C in a common emitter class-A selective amplifier.

mb

f

(GHz)

V

(V)

CE

I

C

(mA)

P

L1

(W)

G

po

(dB)

Z

(Ω)

i

Z
(Ω)

Class-A (CW) 4.2 16 400 ≥1 ≥6 7.5 + j12 4 − j8

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

L

1997 Feb 21 2

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=70Ω−20 V
collector-emitter voltage open base − 16 V
collector current (DC) − 800 mA
total power dissipation Tmb≤ 75 °C − 8W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.1 mm from ceramic;

− 235 °C

t ≤ 10 s

handbook, halfpage

1

I

C

(A)

−1

10

−2

10

1101610

Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 70 Ω.

(1) (2)

Fig.2 DC SOAR.

VCE (V)

MGL006

10

handbook,

P

tot

(W)

8

6

4

2

2

0

0 50 100 200

MGD973

150

Tmb (°C)

Fig.3 Power derating curve.

1997 Feb 21 3

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See “

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

C

cb

C

ce

C

eb

thermal resistance from junction to mounting-base Tj=75°C 10 K/W
thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.7 K/W

Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB= 20 V; IE=0 −−200 µA
emitter cut-off current VEB= 1.5 V; IC=0 −−600 nA
DC current gain VCE=5V; IC= 400 mA 15 − 100
collector-base capacitance VCB= 16 V; VEB= 1.5 V;

− 3 − pF

IE=IC= 0; f = 1 MHz

collector-emitter capacitance VCE= 16 V; VEB= 1.5 V;

− 1.5 − pF

IE=IC= 0; f = 1 MHz

emitter-base capacitance VCB= 10 V; VEB=1V;

− 28 − pF

IC=IE= 0; f = 1 MHz

1997 Feb 21 4

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

Table 1 Common-emitter scattering parameters: VCE= 16 V; IC= 400 mA; Tmb=25°C; Zo=50Ω; typical values.

f

(MHz)

s

11

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

s

21

ANGLE

MAGNITUDE

(deg)

(ratio)

s

12

ANGLE

MAGNITUDE

(deg)

(ratio)

s

22

ANGLE

(deg)

2000 0.84 163 0.049 64 0.96 47.2 0.60 179.3
2100 0.84 161 0.051 62.7 0.94 43.3 0.59 178.0
2200 0.84 159 0.054 60.4 0.93 39.8 0.59 175.6
2300 0.85 158 0.055 58.8 0.91 36.2 0.59 174.2
2400 0.85 156 0.057 57.5 0.91 32.2 0.60 172.6
2500 0.85 155 0.060 56.1 0.90 29.1 0.60 171.1
2600 0.85 154 0.064 54.9 0.89 24.6 0.60 169.8
2700 0.85 153 0.067 53.1 0.89 21.2 0.60 168.6
2800 0.85 152 0.071 51.3 0.89 17.2 0.61 167.1
2900 0.84 150 0.073 49.5 0.90 13.8 0.62 165.7
3000 0.83 149 0.076 48.0 0.90 9.3 0.62 164.7
3100 0.82 149 0.080 46.0 0.91 5.2 0.63 163.8
3200 0.80 147 0.084 44.1 0.92 0.6 0.64 163.0
3300 0.78 146 0.088 40.5 0.93 −4.3 0.65 161.5
3400 0.76 145 0.091 36.1 0.95 −9.7 0.67 160.9
3500 0.74 144 0.093 34.4 0.97 −16.1 0.69 159.6
3600 0.71 143 0.095 30.7 0.98 −23.2 0.70 158.3
3700 0.70 142 0.095 26.3 0.99 −30.6 0.73 156.2
3800 0.67 142 0.093 21.6 0.99 −37.9 0.76 153.6
3900 0.66 142 0.091 17.0 1.00 −46.6 0.79 150.7
4000 0.64 142 0.088 13.2 0.98 −55.8 0.82 147.0
4100 0.64 142 0.084 9.7 0.95 −64.9 0.85 143.1
4200 0.65 143 0.077 7.0 0.91 −73.8 0.88 138.4
4300 0.67 143 0.068 5.9 0.86 −82.6 0.90 133.6
4400 0.69 143 0.060 8.2 0.81 −92.3 0.93 129.3
4500 0.72 141 0.054 13.8 0.74 −101.7 0.94 124.9
4600 0.75 139 0.050 20.5 0.68 −110.6 0.95 120.1
4700 0.76 137 0.050 31.2 0.61 −119.7 0.96 116.5
4800 0.78 135 0.054 43.5 0.56 −129.1 0.97 113.5
4900 0.79 133 0.061 46.6 0.50 −139.5 0.97 110.1
5000 0.77 130 0.068 54.3 0.44 −148.6 0.97 106.7

1997 Feb 21 5

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

APPLICATION INFORMATION

Microwave performance up to T

=25°C in a common emitter class-A selective circuit; note 1.

mb

MODE OF OPERATION

f

(GHz)

Class-A 4.2 16 400 >1

V

(V)

CE

I

C

(mA)

P

L1

(W)

typ. 1.25

G

po

(dB)

>6

typ. 7

Z

i

(Ω)

7.5 + j12 4 − j8

Note

1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.

30

2.2 2.5 2

6

6

2.5

2

MSA102

handbook, full pagewidth

2.5

1

8.5

5.5

12.8

30

611.2

6

1.5

11.3

Z
(Ω)

L

Dimensions in mm.
Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr= 2.54); thickness: 0.8 mm.

Fig.4 Prematching test circuit board.

1997 Feb 21 6

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

1.6

handbook, halfpage

P

L

(W)

1.2

0.8

0.4

0

0 0.1 0.2 0.4

f = 4.2 GHz; VCE= 16 V; IC= 400 mA (regulated).
(1) Gpo= 7 dB.

(1)

0.3

P

L1

Pi (W)

Fig.5 Load power as a function of input power.

MGL013

10

handbook, halfpage

G

po

(dB)

8

G

po

6

4

200

f = 4.2 GHz; VCE=16V.

300 400 600500

Fig.6 Low level power gain associated with

PL1 as a function of collector current.

P

L1

IC (mA)

MGL059

1.5

1

0.5

0

P
(W)

L1

1997 Feb 21 7

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

PACKAGE OUTLINE

handbook, full pagewidth

3.45

2.90

3.2

2.9

0.1

seating plane

0.25

M

O

3

1.0

7.1

20.5 max

2.0

14.2

1

2

0.25 M

(1)3.4

MBC888

1.7 max

5.1

4.5

max

4.5

min

5.5

max

4.5

min

Dimensions in mm.
Torque on screw: Max. 0.4 Nm
Recommended screw: M2.5

(1) Flatness of this area ensures full thermal contact with bolt head.

Fig.7 SOT440A.

1997 Feb 21 8

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 21 9

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

NOTES

1997 Feb 21 10

Philips Semiconductors Product specification

NPN microwave power transistor LTE42012R

NOTES

1997 Feb 21 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 21 Document order number: 9397 75001813