Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
LTE42008R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
File under Discrete Semiconductors, SC15
1997 Feb 24
Page 2
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
FEATURES
• Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Input matching cell improves input impedance and
allows an easier design of circuits.
APPLICATION
• Common emitter class-A linear power amplifiers up
to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT440A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
lumns
Top view
Marking code: 196
Fig.1 Simplified outline and symbol.
1
c
b
3
2
MAM131
e
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF OPERATION
=25°C in a common emitter class-A amplifier.
mb
f
(GHz)
V
(V)
CE
I
C
(mA)
P
L1
(mW)
G
po
(dB)
Z
(Ω)
i
Z
(Ω)
Class-A (CW) linear 4.2 16 250 ≥800 >7 7.5 + j23.5 2.5 − j9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
L
1997 Feb 24 2
Page 3
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 40 V
collector-emitter voltage RBE= 250 Ω−20 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current (DC) − 450 mA
total power dissipation Tmb≤ 75 °C − 7.5 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.3 mm from case; t = 10 s − 235 °C
handbook, halfpage
1
I
C
(A)
0.16
−1
10
ΙΙΙ
−2
10
1
Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 250 Ω.
16
10
Fig.2 DC SOAR.
V
CER
(V)
MGL060
T
amb
MLA736
o
(
C)
10
handbook, halfpage
P
tot
(W)
7.5
5.0
2.5
2
10
0
−50 20050 150
0
100
Fig.3 Power dissipation derating as a function of
mounting-base temperature.
1997 Feb 24 3
Page 4
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See “
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CER
I
EBO
h
FE
C
cb
C
ce
C
eb
thermal resistance from junction to mounting-base Tj=70°C 12 K/W
thermal resistance from mounting-base to heatsink Tj=70°C; note 1 0.7 K/W
Mounting recommendations in the General part of handbook SC15”
.
collector cut-off current VCB= 20 V; IE=0 −−150 µA
= 40 V; IE=0 −−1mA
V
CB
emitter cut-off current VCE= 20 V; RBE= 250 Ω−−0.5 mA
emitter cut-off current VEB= 1.5 V; IC=0 −−0.4 µA
DC current gain VCE=5V; IC= 250 mA 15 − 150
collector-base capacitance VCB= 16 V; VEB= 1.5 V;
− 2 − pF
IE=IC= 0; f = 1 MHz
collector-emitter capacitance VCE= 16 V; VEB= 1.5 V;
− 1.5 − pF
IE=IC= 0; f = 1 MHz
emitter-base capacitance VCB= 10 V; VEB=1V;
− 20 − pF
IC=IE= 0; f = 1 MHz
1997 Feb 24 4
Page 5
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
Table 1 Common-emitter scattering parameters: VCE= 16 V; IC= 250 mA; Tmb=25°C; Zo=50Ω; typical values
f
(MHz)
s
11
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
s
21
ANGLE
MAGNITUDE
(deg)
(ratio)
s
12
ANGLE
MAGNITUDE
(deg)
(ratio)
s
22
ANGLE
(deg)
2000 0.80 160 0.061 61.5 1.40 42.4 0.45 −172.7
2100 0.79 157 0.065 59.4 1.37 38.0 0.44 −173.7
2200 0.79 155 0.068 56.5 1.36 34.0 0.44 −175.5
2300 0.80 153 0.071 54.3 1.35 29.9 0.45 −176.5
2400 0.79 151 0.074 52.2 1.35 25.3 0.45 −176.9
2500 0.79 150 0.079 50.1 1.35 21.1 0.45 −177.6
2600 0.78 148 0.085 48.4 1.34 16.2 0.46 −178.0
2700 0.77 147 0.090 45.1 1.34 11.8 0.47 −178.3
2800 0.75 146 0.095 41.7 1.35 7.6 0.48 −178.6
2900 0.73 144 0.099 38.3 1.38 2.9 0.50 −178.9
3000 0.71 143 0.104 35.4 1.40 −2.6 0.52 −178.8
3100 0.67 143 0.111 31.8 1.42 −8.3 0.55 −179.2
3200 0.64 141 0.116 27.4 1.43 −14.1 0.58 −179.9
3300 0.60 141 0.121 21.7 1.44 −20.4 0.62 178.8
3400 0.56 142 0.124 15.7 1.48 −28.1 0.66 176.9
3500 0.52 143 0.124 11.2 1.49 −36.4 0.70 174.4
3600 0.49 146 0.124 5.2 1.48 −45.1 0.74 171.3
3700 0.47 149 0.122 −2.2 1.47 −53.9 0.79 166.8
3800 0.46 154 0.118 −9.7 1.45 −63.1 0.84 161.9
3900 0.48 159 0.112 −15.7 1.41 −72.9 0.87 156.7
4000 0.51 161 0.106 −22.8 1.34 −82.5 0.91 150.7
4100 0.56 162 0.096 −29.4 1.26 −91.7 0.94 144.8
4200 0.61 161 0.083 −34.5 1.18 −100.1 0.96 138.6
4300 0.67 158 0.068 −37.4 1.08 −108.8 0.97 132.5
4400 0.71 155 0.054 −38.7 0.99 −117.8 0.98 127.3
4500 0.76 152 0.042 −35.4 0.90 −126.5 0.99 122.2
4600 0.79 147 0.031 −26.6 0.81 −134.7 0.99 117.2
4700 0.81 143 0.025 −5.6 0.73 −143.0 0.99 113.7
4800 0.82 140 0.026 28.8 0.66 −151.2 0.99 110.0
4900 0.82 136 0.034 40.1 0.59 −158.8 0.99 106.5
5000 0.82 132 0.043 52.4 0.53 −167.3 0.98 103.2
1997 Feb 24 5
Page 6
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
APPLICATION INFORMATION
Microwave performance up to T
=25°C in a common emitter class-A test circuit; note 1.
mb
MODE OF OPERATION
f
(GHz)
Class-A (CW) 4.2 16 250 ≥800 (29)
V
(V)
CE
(2)
I
(mA)
C
(2)
P
(mW)
L1
(3)
G
(dB)
po
(4)
Z
(Ω)
i
Z
(Ω)
7.5 + j40 4 + j4
typ. 940 (29.7)≥7typ. 7.5
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. I
and VCE regulated.
C
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
6.4
1.6
7
output
0.3
1
0.8
VSWR < 3
Z0 = 50 Ω
MGK058
handbook, full pagewidth
input
VSWR < 3
Z0 = 50 Ω
4.5 12.5 6.3 4.4 5.6
2
0.7
3.4
L
Dimensions in mm.
Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr= 2.54); thickness: 1.6 mm.
Output striplines on a double copper-clad Rexolite printed-circuit board with dielectric (εr= 2.4); thickness: 0.25 mm.
Fig.4 Prematching test circuit board.
1997 Feb 24 6
Page 7
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
1.2
handbook, halfpage
P
L
(W)
0.8
0.4
0
0
f = 4.2 GHz; Tmb=25°C.
VCE= 16 V; IC= 250 mA (regulated).
(1) Gpo= 7.5 dB.
(1)
typ
100 200 300
P
L1
Pi (mW)
Fig.5 Load power as a function of input power.
MGL011
handbook, halfpage
2
P
L1
(W)
1
0
05
P
L1
G
po
1234
MGL017
f (GHz)
Fig.6 Load power and power gain associated with
1 dB compressed power gain as a function
of frequency.
15
G
po
(dB)
10
5
1300
handbook, halfpage
P
L1
(mW)
1100
150
VCE = 18 V
200 250 350
900
700
500
Tmb=25°C; VCE and ICregulated.
Fig.7 Load power associated with 1 dB
compressed power gain as a function of
collector current; typical values.
300
16 V
IC (mA)
MBH905
14 V
7.7
handbook, halfpage
100
VCE = 18 V
200 400
G
po
(dB)
7.3
6.9
6.5
Tmb=25°C; VCE and ICregulated.
16 V
300
MBH906
14 V
IC (mA)
Fig.8 Low level power gain associated with PL1 as
a function of collector current; typical
values.
1997 Feb 24 7
Page 8
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
handbook, full pagewidth
VCE= 16 V; IC= 250 mA (regulated).
Zo=50Ω; Tmb=25°C.
1
0.5
4
4.2 GHz
3
0.2
+ j
0
–
j
0.2
3.5
2.5
Z
2
1.5
1
0.5
i
0.2 1052
10.5
1
2
5
10
∞
10
5
2
MCD629
Fig.9 Input impedance as a function of frequency for PL1; typical values.
handbook, full pagewidth
VCE= 16 V; IC= 250 mA (regulated).
Zo=50Ω; Tmb=25°C.
Fig.10 Optimum load impedance as a function of frequency for PL1; typical values.
1
0.5
Z
4
4.2
L
1.5
2
2.5
3
3.5
0.5
1 GHz
0.5 10.2 1052
1
0.2
+ j
0
– j
0.2
2
5
10
∞
10
5
2
MCD628
1997 Feb 24 8
Page 9
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
PACKAGE OUTLINE
handbook, full pagewidth
3.45
2.90
3.2
2.9
0.1
seating plane
0.25
M
O
3
1.0
7.1
20.5 max
2.0
14.2
1
2
0.25 M
(1)3.4
MBC888
1.7 max
5.1
4.5
max
4.5
min
5.5
max
4.5
min
Dimensions in mm.
Torque on screw: Max. 0.4 Nm.
Recommended screw: M2.5.
(1) Flatness of this area ensures full thermal contact with bolt head.
Fig.11 SOT440A.
1997 Feb 24 9
Page 10
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 24 10
Page 11
Philips Semiconductors Product specification
NPN microwave power transistor LTE42008R
NOTES
1997 Feb 24 11
Page 12
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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 24 Document order number: 9397 750 01818
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