The LTC®4218 is a Hot Swap™ controller that allows a board
to be safely inserted and removed from a live backplane.
An internal high side switch driver controls the gate of an
external N-channel MOSFET for supply voltages from 2.9V
to 26.5V. A dedicated 12V version (LTC4218-12) contains
preset 12V specifi c thresholds, while the standard LTC4218
allows adjustable thresholds.
The LTC4218 provides an accurate (5%) current limit with
current foldback limiting. The current limit threshold can
be adjusted dynamically using an external pin. Additional
features include a current monitor output that amplifi es
the sense voltage for ground referenced current sensing.
Overvoltage, undervoltage and powergood monitoring
are also provided.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
Hot Swap is a trademark of Linear Technology Corporation. All other trademarks are the
property of their respective owners.
TYPICAL APPLICATION
12V, 6A Card Resident Application
12V
2mΩ
AUTO
RETRY
0.1μF
0.1μF
Si7108DN
10Ω
SENSE–GATE
+
SENSE
V
DD
UV
LTC4218DHC-12
FLT
TIMER
INTV
CC
GND
SOURCE
I
MON
PG
12V
10k
20k
1k
0.01μF
Power-Up Waveform
V
OUT
12V
6A
+
330μF
ADC
4218 TA01a
V
10V/DIV
1A/DIV
V
OUT
10V/DIV
PG
10V/DIV
IN
I
IN
25ms/DIV
4218 TA01b
4218f
1
Page 2
LTC4218
ABSOLUTE MAXIMUM RATINGS
(Notes 1, 2)
Supply Voltage (VDD) ................................. –0.3V to 35V
Input Voltages
FB, OV, UV ............................................. –0.3V to 12V
TIMER ................................................... –0.3V to 3.5V
–
SENSE
SENSE+ ............................. VDD – 10V or –0.3V to V
............................. VDD – 10V or –0.3V to V
DD
DD
SOURCE ........................................ – 5V to VDD + 0.3V
Output Voltages
, I
I
SET
PG,
................................................. –0.3V to 3V
MON
⎯F⎯L⎯
T .................................................. –0.3V to 35V
PIN CONFIGURATION
TOP VIEW
SENSE
SENSE
I
SET
I
MON
FB
FLT
PG
GATE
+
–
1
NC
2
V
DD
3
UV
4
OV
5
TIMER
6
INTV
CC
7
GND
SOURCE
8
16-LEAD (5mm × 3mm) PLASTIC DFN
EXPOSED PAD (PIN 17) IS SUBSTRATE GND
DHC PACKAGE
T
= 125°C, θJA = 43°C/W
JMAX
16
15
14
13
17
12
11
10
9
INTVCC .................................................. –0.3V to 3.5V
GATE (Note 3) ........................................ –0.3V to 35V
Operating Temperature Range
LTC4218C ................................................ 0°C to 70°C
LTC4218I ............................................. –40°C to 85°C
Storage Temperature Range
DHC Package ..................................... –65°C to 125°C
GN Package .......................................–65°C to 150°C
Lead Temperature (Soldering, 10 sec)
GN Package Only .............................................. 300°C
TOP VIEW
NC
V
DD
UV
OV
TIMER
INTV
CC
GND
SOURCE
16-LEAD PLASTIC SSOP
T
JMAX
1
2
3
4
5
6
7
8
GN PACKAGE
= 150°C, θJA = 135°C/W
16
15
14
13
12
11
10
9
SENSE
SENSE
I
SET
I
MON
FB
FLT
PG
GATE
+
–
ORDER INFORMATION
LEAD FREE FINISHTAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGE
LTC4218CDHC-12#PBFLTC4218CDHC-12#TRPBF42181216-Lead (5mm × 3mm) Plastic DFN0°C to 70°C
LTC4218IDHC-12#PBFLTC4218IDHC-12#TRPBF42181216-Lead (5mm × 3mm) Plastic DFN–40°C to 85°C
LTC4218CGN#PBFLTC4218CGN#TRPBF421816-Lead Plastic SSOP0°C to 70°C
LTC4218IGN#PBFLTC4218IGN#TRPBF421816-Lead Plastic SSOP–40°C to 85°C
Consult LTC Marketing for parts specifi ed with wider operating temperature ranges. *The temperature grade is identifi ed by a label on the shipping container.
Consult LTC Marketing for information on non-standard lead based fi nish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifi cations, go to: http://www.linear.com/tapeandreel/
4218f
2
Page 3
LTC4218
ELECTRICAL CHARACTERISTICS
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS
DC Characteristics
V
DD
I
DD
V
DD(UVL)
V
DD(UVTH)
ΔV
DD(UVHYST)
V
DD(OVTH)
ΔV
DD(OVHYST)
V
SOURCE(PGTH)
ΔV
SOURCE(PGHYST)
ΔV
SNS(TH)
I
SENSE–(IN)
I
SENSE+(IN)
ΔV
GATE
ΔV
GATE-HIGH(TH)
I
GATE(UP)
I
GATE(FST)
I
GATE(DN)
Inputs
I
(IN)
R
(IN)
V
(TH)
ΔV
OV(HYST)
ΔV
UV(HYST)
V
UV(RTH)
ΔV
FB(HYST)
R
ISET
I
SOURCE
Outputs
V
(OL)
I
(OH)
V
TIMER(H)
V
TIMER(L)
I
TIMER(UP)
I
TIMER(DN)
Input Supply Range
Input Supply CurrentFET On
Input Supply Undervoltage LockoutVDD Rising
Input Supply Undervoltage ThresholdLTC4218-12 Only VDD Rising
Input Supply Undervoltage HysteresisLTC4218-12 Only
Input Supply Overvoltage ThresholdLTC4218-12 Only VDD Rising
Input Supply Overvoltage HysteresisLTC4218-12 Only
SOURCE Powergood ThresholdLTC4218-12 Only V
SOURCE Powergood HysteresisLTC4218-12 Only
Current Limit Sense Voltage Threshold
(V
SENSE+
– V
SENSE–
)
SENSE– Pin Input CurrentV
SENSE+ Pin Input CurrentV
External N-Channel Gate Drive
(V
– V
GATE
Gate High Threshold (V
SOURCE
)
– V
GATE
SOURCE
External N-Channel Gate Pull-Up CurrentGate Drive On, V
External N-Channel Gate Fast Pulldown
Current
External N-Channel Gate Pulldown CurrentGate Drive Off, V
OV, UV, FB Pin Input CurrentVIN = 1.2V, LTC4218 Only
OV, UV, FB Pin Input ResistanceLTC4218-12 Only
OV, UV, FB Pin Threshold VoltageVIN Rising
OV Pin Hysteresis
UV Pin Hysteresis
UV Pin Reset Threshold VoltageVUV Falling
FB Pin Power Good Hysteresis
I
Pin Output Resistor
SET
SOURCE Pin Input CurrentV
PG, ⎯F⎯L⎯T Pin Output Low VoltageI
PG, ⎯F⎯L⎯T Pin Input Leakage CurrentV
TIMER Pin High ThresholdV
TIMER Pin Low ThresholdV
TIMER Pin Pull Up CurrentV
TIMER Pin Pulldown CurrentV
= 25°C. VDD = 12V unless otherwise noted.
A
Rising
SOURCE
= 1.23V
V
FB
V
= 0V
FB
V
= 1.23V, R
FB
= 12V
SENSE–
= 12V
SENSE+
= 2.9V to 26.5V (Note 3)
V
DD
I
= 0, –1μA
GATE
SET
= 20kΩ
)
Fast Turn Off, V
V
=12V
SOURCE
V
=12V
SOURCE
= V
SOURCE
V
SOURCE
V
SOURCE
OUT
OUT
TIMER
TIMER
TIMER
TIMER
= V
= V
= 2mA
= 30V
Rising
Falling
= 0V
= 1.2V
GATE
GATE
GATE
= V
GATE
= 18V,
GATE
= 18V,
GATE
= 12V, LTC4218-12 Only
= 12V, LTC4218 Only
= 0V
SOURCE
= 12V
●
2.926.5V
●
●
2.652.732.85V
●
9.69.8810.2V
●
580650700mV
●
14.715.0515.4V
●
230270300mV
●
10.210.510.8V
●
150175200mV
●
14.25
●
2.8
●
6.7
●
●
●
56.156.5V
●
3.54.24.8V
●
–19–24–29μA
●
120170220mA
●
200250340μA
●
●
131823kΩ
●
1.211.2351.26V
●
102030mV
●
5080110mV
●
0.550.620.7V
●
102030mV
●
19.52020.5kΩ
●
50
●
1
●
●
●
●
1.21.2351.28V
●
0.10.210.3V
●
–80–100–120μA
●
1.422.6μA
1.65mA
15
15.75
3.75
7.5
8.325
4±10μA
5.5±20μA
0±1 μA
70
2
0
0.40.8V
0±10μA
4.7
90
4
±1
mV
mV
mV
μA
μA
μA
4218f
3
Page 4
LTC4218
ELECTRICAL CHARACTERISTICS
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS
I
TIMER(RATIO)
I
MON(FS)
I
MON(OFF)
G
IMON
AC Characteristics
t
PHL(GATE)
t
PHL(SENSE)
t
D(ON)
TIMER Pin Current Ratio I
I
TIMER(UP)
I
Fullscale Output CurrentV
MON
I
Pin Offset CurrentV
MON
I
Pin GainV
MON
TIMER(DN)
Input High (OV), Input Low (UV) to GATE
Low Propagation Delay
V
SENSE
+
– V
–
High to GATE Low
SENSE
Propagation Delay
Turn-On DelayStep VUV to 2V, V
= 25°C. VDD = 12V unless otherwise noted.
A
/
+
– V
SENSE
+
– V
SENSE
+
– V
SENSE
V
< 16.5V Falling
GATE
VFB = 0, Step (V
60mV, C
GATE
–
= 15mV
SENSE
–
= 1mV
SENSE
–
= 15mV and 1mV
SENSE
+
SENSE
= 1.5nF, V
– V
GATE
SENSE
< 16.5V
Falling
> 13V
GATE
–
) to
●
1.622.7%
●
94100106μA
●
●
6.476.676.87μA/mV
●
●
●
50100150ms
±0±6μA
35 μs
0.21μs
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into pins are positive, all voltages are referenced to
GND unless otherwise specifi ed.
Note 3: An internal clamp limits the GATE pin to a maximum of 6.5V above
the SOURCE pin. Driving either GATE or SOURCE pin to voltages beyond
the clamp may damage the device.
4
4218f
Page 5
LTC4218
TYPICAL PERFORMANCE CHARACTERISTICS
2.0
1.8
1.6
(mA)
DD
I
1.4
1.2
1.0
IDD vs V
0
DD
85°C
25°C
–40°C
5101520
VDD (V)
UV Hysteresis vs Temperature
0.10
2530
4218 G01
INTVCC Load Regulation
3.5
3.0
2.5
2.0
(V)
CC
1.5
INTV
1.0
0.5
0
0
I
LOAD
VDD = 3.3V
(mA)
Timer Pull-Up Current vs
TemperatureCurrent Limit Delay
–110
T
= 25°C, VDD = 12V unless otherwise noted.
A
UV Low-High Threshold vs
Temperature
1.234
VDD = 5V
1.232
1.230
1.228
UV LOW-HIGH HRESHOLD (V)
–14–12–10–8–6–4–2
4218 G02
1.226
1000
–50
–25025
C
= 10nF
GATE
TEMPERATURE (°C)
5075100
4218 G03
–105
0.08
–100
0.06
UV HYSTERESIS (V)
0.04
–50
–25025
TEMPERATURE (°C)
5075100
4218 G04
–95
TIMER PULL-UP CURRENT (μA)
–90
–25025
–50
TEMPERATURE (°C)
5075100
4218 G05
Current Limit Threshold FoldbackCurrent Limit AdjustmentI
16
14
12
) (mV)
–
10
SENSE
8
– V
+
6
SENSE
4
(V
CURRENT LIMIT SENSE VOLTAGE
2
0
0.20.40.60.8
0
FB VOLTAGE (V)
1.01.2
4218 G07
16
14
12
10
) (mV)
8
SENSE
– V
6
DD
(V
4
CURRENT LIMIT SENSE VOLTAGE
2
0
1k
10k100k1M
R
SET
(Ω)
4218 G08
10M
100
10
1
CURRENT LIMIT PROPAGATION DELAY (μs)
(kΩ)
ISET
R
0.1
22
21
20
19
18
15304560
075
CURRENT LIMIT SENSE VOLTAGE
Resistor vs Temperature
SET
–50
–25025
+
– V
(V
SENSE
SENSE
TEMPERATURE (°C)
–
) (mV)
5075100
4218 G06
4218 G09
4218f
5
Page 6
LTC4218
TYPICAL PERFORMANCE CHARACTERISTICS
GATE Pull-Up Current vs
Temperature
–26.0
–25.5
–25.0
PULL-UP (μA)
GATE
I
–24.5
–24.0
–50
–25025
TEMPERATURE (°C)
5075100
4218 G10
Gate Drive vs TemperaturePG, ⎯F⎯L⎯T V
6.15
) (V)
6.14
SOURCE
6.13
– V
GATE
6.12
6.11
GATE DRIVE (V
Gate Pull-Up Current vs
Gate DriveGate Drive vs V
7
6
) (V)
5
SOURCE
4
– V
GATE
3
2
1
GATE DRIVE (V
0
0
14
12
10
8
LOW (V)
OUT
6
4
PG, FLT V
2
–5–10–15–20
OUT
VDD = 12V
VDD = 3.3V
I
(μA)
GATE
Low vs I
PG
LOAD
FLT
TA = 25°C, VDD = 12V unless otherwise noted.
SENSE
DD
VDD (V)
–
= 15mV
202530
–25–30
4218 G11
6.2
) (V)
6.0
SOURCE
5.8
– V
GATE
5.6
5.4
GATE DRIVE (V
5.2
0
vs Temperature and V
I
MON
105
VDD = 3.3V, 12V, 24V
V
SENSE
100
95
(μA)
MON
I
90
85
51015
+
– V
4218 G12
DD
6
6.10
–50
–25025
TEMPERATURE (°C)
100
75
(μA)
50
MON
I
25
0
5075100
I
vs SenseV
MON
0
4218 G13
510
SENSE VOLTAGE (mV)
0
0
2468
15
4218 G16
I
LOAD
(mA)
1012
4218 G14
4
3
(V)
2
IMON
V
1
0
0
IMON
vs Sense
80
–50
–25025
TEMPERATURE (°C)
R
IMON
R
IMON
R
= 20k
IMON
R
IMON
510
SENSE VOLTAGE (mV)
5075100
4218 G15
= 100k
= 40k
= 10k
15
4218 G17
4218f
Page 7
PIN FUNCTIONS
LTC4218
Exposed Pad: Exposed pad may be left open or connected
to device ground.
FB: Foldback and Power Good Comparator Input. Connect
this pin to an external resistive divider from SOURCE for
the LTC4218 (adjustable version). The LTC4218-12 version uses a fi xed internal divider with optional external
adjustment. Open the pin if the LTC4218-12 thresholds
for 12V operation are desired. If the voltage falls below
0.6V, the output power is considered bad and the current
limit is reduced. If the voltage falls below 1.21V the PG
pin will pull low to indicate the power is bad.
⎯F⎯L⎯
T: Overcurrent Fault Indicator. Open drain output pulls
low when an overcurrent fault has occurred and the circuit
breaker trips. For overcurrent auto-retry tie to UV pin (see
Applications Information for details).
GATE: Gate Drive for External N-Channel FET. An internal
24μA current source charges the gate of the external
N-channel MOSFET. A resistor and capacitor network
from this pin to ground sets the turn-on rate. During an
undervoltage or overvoltage generated turn-off a 250μA
pulldown current turns the MOSFET off. During a short
circuit or undervoltage lockout, a 170mA pulldown current
source between GATE and SOURCE is activated.
GND: Device Ground.
OV: Overvoltage Comparator Input. Connect this pin to
an external resistive divider from VDD for the LTC4218
(adjustable version). The LTC4218-12 version uses a fi xed
internal divider with optional external adjustment for 12V
operation. Open the pin if the LTC4218-12 thresholds are
desired. If the voltage at this pin rises above 1.235V, an
overvoltage is detected and the switch turns off. Tie to
GND if unused.
PG: Power Good Indicator. Open drain output pulls low
when the FB pin drops below 1.21V indicating the power
is bad.
SENSE–: Current Sense Minus Input. Connect this pin to
the opposite of VDD current sense resistor side. The current limit circuit controls the GATE pin to limit the sense
voltage between the SENSE+ and SENSE– pins to 15mV
or less depending on the voltage at the FB pin.
SENSE+: Current Sense Plus Input. Connect this pin to
the VDD side of the current sense resistor.
SOURCE: N-Channel MOSFET Source Connection. Connect
this pin to the source of the external N-channel MOSFET
switch. This pin provides a return for the gate pulldown
circuit. In the LTC4218-12 version, the powergood comparator monitors an internal resistive divider between the
SOURCE pin and GND.
I
: Current Monitor Output. The current sourced from
MON
this pin is defi ned as the current sense voltage (between
the SENSE+ and SENSE– pins) multiplied by 6.67μA/mV.
Placing a 20k resistor from this pin to GND creates a 0V to
2V voltage swing when the current sense voltage ranges
from 0mV to 15mV.
INTVCC: Internal 3V Supply Decoupling Output. This pin
must have a 0.1μF or larger capacitor.
I
: Current Limit Adjustment Pin. For 15mV current limit
SET
threshold, open this pin. This pin is driven by a 20k resistor in series with a voltage source. The pin voltage is used
to generate the current limit threshold. The internal 20k
resistor and an external resistor between I
create an attenuator that lowers the current limit value.
NC: No Connection
and ground
SET
TIMER: Timer Input. Connect a capacitor between this pin
and ground to set a 12ms/μF duration for current limit
before the switch is turned off. If the UV pin is toggled
low while the MOSFET switch is off, the switch will turn on
again following a cool down time of 518ms/μF duration.
UV: Undervoltage Comparator Input. Tie high if unused.
Connect this pin to an external resistive divider from VDD
for the LTC4218 (adjustable version). The LTC4218-12
version drives the UV pin with an internal resistive divider
from VDD. Open the pin if the preset LTC4218-12 thresholds for 12V operation are desired. If the UV pin voltage
falls below 1.15V, an undervoltage is detected and the
switch turns off. Pulling this pin below 0.62V resets the
overcurrent fault and allows the switch to turn back on
(see Applications Information for details). If overcurrent
auto-retry is desired then tie this pin to the ⎯F⎯L⎯T pin.
VDD: Supply Voltage. This pin has an undervoltage lockout
threshold of 2.73V.
4218f
7
Page 8
LTC4218
FUNCTIONAL DIAGRAM
+
SENSE
V
DD
+–
V
DD
UV
OV
140k
20k
224k
20k
1.235V
*
*
0.62V
V
DD
*
*
1.235V
+
–
+
–
+
–
SENSE
UV
RST
OV
–
–
CS
+
CM
0.2V
GATESOURCE
CHARGE
PUMP
AND GATE
DRIVER
+
TM1
–
LOGIC
100μA
2μA
INTV
CC
REFERENCE
FOLDBACK
PG
CLAMP
0.6V
I
MON
I
SET
20k
X1
FB
0.6V
SOURCE
150k
20k
*
*
PG
FLT
+
–
1.235V
+
V
DD
3.1V
GEN
INTV
CC
–
V
2.73V
TM2
–
DD
UVLO1
1.235V
–
+
8
TIMER
* DFN ONLY
GND
EXPOSED PAD*
UVLO2
+
2.65V
4218 BD
4218f
Page 9
OPERATION
LTC4218
The Functional Diagram displays the main circuits of the
device. The LTC4218 is designed to turn a board’s supply voltage on and off in a controlled manner, allowing
the board to be safely inserted and removed from a live
backplane. During normal operation, the charge pump and
gate driver turn on the external N-channel pass FET’s gate
to provide power to the load.
The current sense (CS) amplifi er monitors the load current
using the voltage sensed across the current sense resistor.
The CS amplifi er limits the current in the load by reducing
the GATE-to-SOURCE voltage in an active control loop. It
is simple to adjust the current limit threshold using the
current setting (I
during other times such as startup.
A short circuit on the output to ground causes signifi cant
power dissipation during active current limiting. To limit
this power, the foldback amplifi er reduces the current limit
value from 15mV to 3.75mV (referred to the SENSE
SENSE
below 0.6V (see Typical Performance Characteristics).
If an overcurrent condition persists, the TIMER pin ramps
up with a 100μA current source until the pin voltage exceeds
1.2V (comparator TM2). This indicates to the logic that it
is time to turn off the MOSFET to prevent overheating. At
this point the TIMER pin ramps down using the 2μA current
source until the voltage drops below 0.2V (Comparator
TM1) which tells the logic to start an internal 100ms timer.
–
voltage) in a linear manner as the FB pin drops
) pin. This allows a different threshold
SET
+
minus
At this point, the pass transistor has cooled and it is safe
to turn it on again.
The fi xed 12V version, LTC4218-12, uses two separate
internal dividers from V
This version also features a divider from the SOURCE pin
to drive the FB pin. The LTC4218-12 is available in a DFN
package while the LTC4218 (adjustable version) is in a
SSOP package.
The output voltage is monitored using the FB pin and the
PG comparator to determine if the power is available for
the load. The power good condition is signaled by the PG
pin using an open-drain pulldown transistor.
The Functional Diagram shows the monitoring blocks of
the LTC4218. The comparators on the left side include
the UV and OV comparators. These comparators are used
to determine if the external conditions are valid prior to
turning on the MOSFET. But fi rst, the undervoltage lockout
circuits (UVLO1 and UVLO2) must validate the input supply
and internally generated 3.1V supply (INTV
ate the power up initialization to the logic circuits. If the
external conditions remain valid for 100ms the MOSFET
is allowed to turn on.
Other monitoring features include the I
The current monitor (CM) outputs a current proportional to
the sense resistor current. This current can drive an external
resistor or other circuits for monitoring purposes.
to drive the UV and OV pins.
DD
) and gener-
CC
current monitor.
MON
4218f
9
Page 10
LTC4218
APPLICATIONS INFORMATION
The typical LTC4218 application is in a high availability
system that uses a positive voltage supply to distribute
power to individual cards. The basic application circuit
is shown in Figure 1. External component selection is
discussed in detail in the following sections.
R
Q1
S
2mΩ
12V
0.1μF
Si7108DN
R1
10Ω
R
I
I
MON
GATE
1k
C
GATE
0.01μF
R6
12V
R8
10k
R
20k
R
20k
SET
MON
150k
20k
R7
FB
PG
SET
–
GATE SOURCESENSE
+
SENSE
V
DD
R4
140k
R2
224k
R3
20k
C
T
0.1μF
UV
FLT
LTC4218GN
OV
R5
20k
TIMER
INTV
CC
C1
GND
V
OUT
12V
3A
+
C
L
330μF
ADC
4218 F01
Figure 1. 3A, 12V Card Resident Application
Turn-On Sequence
The power supply on a board is controlled by placing
an external N-channel pass transistor (Q1) in the power
path. Note the sense resistor (R
the capacitor (C
) controls gate slew rate. Resistor R1
GATE
) detects current and
S
prevents high frequency oscillations in Q1 and resistor
R
GATE
isolates C
during fast turn-off.
GATE
Several conditions must be present before the external
pass transistor can be turned on. First, the supply V
DD
must exceed its undervoltage lockout level. Next, the
internally generated supply INTV
must cross its 2.65V
CC
undervoltage threshold. This generates a 25μs poweron-reset pulse which clears the logic’s fault register and
initializes internal latches.
After the power-on-reset pulse, the LTC4218 will go through
the following sequence. First, the UV and OV pins must
indicate that the input power is within the acceptable range.
All of these conditions must be satisfi ed for a duration
of 100ms to ensure that any contact bounce during the
insertion has ended.
The pass transistor is turned on by charging up the GATE
with a 24μA charge pump generated current source
(Figure 2).
VDD + 6.15
V
SLOPE = 24μA/C
DD
Figure 2. Supply Turn-On
GATE
t1t2
GATE
SOURCE
4218 F02
The voltage at the GATE pin rises with a slope equal to
24μA/C
I
INRUSH
and the supply inrush current is set at:
GATE
C
L
=•24
C
GATE
µA
When the GATE voltage reaches the MOSFET threshold
voltage, the switch begins to turn on and the SOURCE
voltage follows the GATE voltage as it increases. Once
SOURCE reaches V
, the GATE will ramp up until clamped
DD
by the 6.15V zener between GATE and SOURCE.
As the SOURCE pin voltage rises, so will the FB pin which
is monitoring it. If the voltage across the current sense
resistor (R
) gets too high, the inrush current will be limited
S
by the internal current limiting circuitry. Once the FB pin
crosses its 1.235V threshold and the GATE to SOURCE
voltage exceeds 4.2V, the PG pin will cease to pull low and
indicate that the power is good.
Turn-Off Sequence
The switch can be turned off by a variety of conditions. A
normal turn-off is initiated by the UV pin going below its
1.235V threshold. Additionally, several fault conditions will
turn off the switch. These include an input overvoltage (OV
pin) and overcurrent circuit breaker (SENSE pin). Normally,
the switch is turned off with a 250μA current pulling down
the GATE pin to ground. With the switch turned off, the
SOURCE pin voltage drops which pulls the FB pin below
10
4218f
Page 11
APPLICATIONS INFORMATION
LTC4218
its threshold. The PG then pulls low to indicate output
power is no longer good.
drops below 2.65V for greater than 5μs or INTVCC
If V
DD
drops below 2.5V for greater than 1μs, a fast shutdown
of the switch is initiated. The GATE is pulled down with a
170mA current to the SOURCE pin.
Overcurrent Fault
The LTC4218 features an adjustable current limit with
foldback that protects the MOSFET when excessive load
current happens. To protect the switch during active current limit, the available current is reduced as a function
of the output voltage sensed by the FB pin. A graph in the
Typical Performance Characteristics shows the current
limit versus FB voltage.
An overcurrent fault occurs when the current limit circuitry
has been engaged for longer than the time-out delay set by
the TIMER. Current limiting begins when the current sense
+
voltage between the SENSE
and SENSE– pins reaches
3.75mV to 15mV (depending on the foldback). The GATE
pin is then brought down with a 170mA GATE-to-SOURCE
current. The voltage on the GATE is regulated in order to
limit the current sense voltage to less than 15mV. At this
point, a circuit breaker time delay starts by charging the
external timing capacitor from the TIMER pin with a 100μA
pull-up current. If the TIMER pin reaches its 1.2V threshold, the external switch turns off (with a 250μA current
⎯F⎯L⎯
from GATE to ground). Next, the
T pin is pulled low to
indicate an overcurrent fault has turned off the MOSFET.
For a given the circuit breaker time delay, the equation for
setting the timing capacitor’s value is as follows:
= TCB • 0.083[μF/ms]
C
T
After the switch is turned off, the TIMER pin begins discharging the timing capacitor with a 2μA pulldown current.
When the TIMER pin reaches its 0.2V threshold, the switch
is allowed to turn on again if the overcurrent fault has been
cleared. Bringing the UV pin below 0.6V and then high will
clear the fault. If the TIMER pin is tied to INTV
, then the
CC
switch is allowed to turn on again (after an internal 100ms
delay) if the overcurrent fault is cleared.
⎯F⎯L⎯
Tying the
T pin to the UV pin allows the part to self-clear
the fault and turn the MOSFET on as soon as TIMER pin has
ramped below 0.2V. In this auto retry mode, the LTC4218
repeatedly tries to turn on after an overcurrent at a period
determined by the capacitor on the TIMER pin.
The waveform in Figure 3 shows how the output latches
off following a short circuit. The drop across the sense
resistor is 3.75mV as the timer ramps up.
V
OUT
10V/DIV
I
OUT
2A/DIV
ΔV
GATE
10V/DIV
TIMER
2V/DIV
1ms/DIV
Figure 3. Short-Circuit Waveform
4218 F03
Current Limit Adjustment
The default value of the active current limiting signal
threshold is 15mV. The current limit threshold can be
adjusted lower by placing a resistor on the I
shown in the Functional Diagram the voltage at the I
pin. As
SET
SET
pin (via the clamp circuit) sets the CS amplifi er’s built-in
offset voltage. This offset voltage directly determines the
active current limit value. With the I
age at the I
pin is determined by the buffered reference
SET
pin open, the volt-
SET
voltage. This voltage is set to 0.618V which corresponds
to a 15mV current limit threshold.
An external resistor placed between the I
pin and ground
SET
forms a resistive divider with the internal 20k sourcing
resistor. The divider acts to lower the voltage at the I
SET
pin and therefore lower the current limit threshold. The
overall current limit threshold precision is reduced to ±11%
when using a 20k resistor to half the threshold.
4218f
11
Page 12
LTC4218
APPLICATIONS INFORMATION
Using a switch (connected to ground) in series with the
external resistor allows the active current limit to change
only when the switch is closed. This feature can be used
when the startup current exceeds the typical maximum
load current.
Monitor MOSFET Current
The current in the MOSFET passes through the sense
resistor. The voltage on the sense resistor is converted to
a current that is sourced out of the I
the I
amplifi er is 100μA from I
SENSE
pin. The gain of
MON
for 15mV on the
MON
sense resistor. This output current can be converted to a
voltage using an external resistor to drive a comparator
or ADC. The voltage compliance for the I
0V to INTV
– 0.7V.
CC
pin is from
MON
A microcontroller with a built-in comparator can build a
simple integrating single-slope ADC by resetting a capacitor that is charged with this current. When the capacitor
voltage trips the comparator and the capacitor is reset, a
timer is started. The time between resets will indicate the
MOSFET current.
Monitor OV and UV Faults
Protecting the load from an overvoltage condition is the
main function of the OV pin. In the LTC4218-12 an internal
resistive divider (driving the OV pin) connects to a comparator to turn off the MOSFET when the V
15.05V. If the V
pin subsequently falls back below 14.8V,
DD
voltage exceeds
DD
the switch will be allowed to turn on immediately. In the
LTC4218, the OV pin threshold is 1.23V when rising and
1.21V when falling out of overvoltage.
The UV pin functions as an undervoltage protection pin or
as an “on” pin. In the LTC4218-12 the MOSFET turns off
when V
falls below 9.23V. If the VDD pin subsequently
DD
rises above 9.88V for 100ms, the switch will be allowed
to turn on again. The LTC4218 UV turn on/off threshold
is 1.23V (rising) and 1.15V (falling).
In the case of an undervoltage or overvoltage, the MOSFET
turns off and there is indication on the PG status pin. When
the overvoltage is removed, the MOSFET’s gate ramps up
immediately.
Powergood Indication
In addition to setting the foldback current limit threshold,
the FB pin is used to determine a powergood condition.
The LTC4218-12 uses an internal resistive divider on
the SOURCE pin to drive the FB pin. The PG comparator
indicates logic high when SOURCE pin rises above 10.5V.
If the V
pin subsequently falls below 10.3V, the com-
DD
parator toggles low. On the LTC4218 the PG comparator
drives high when the FB pin rises above 1.23V and low
when falls below 1.21V.
Once the PG comparator is high, the GATE pin voltage
is monitored with respect to the SOURCE pin. Once the
GATE minus SOURCE voltage exceeds 4.2V, the PG pin
goes high. This indicates to the system that it is safe to
load the Output while the MOSFET is completely turned
“on”. The PG pin goes low when the GATE is commanded
+
off (using the UV, OV or SENSE
/SENSE– pins) or when
the PG comparator drives low.
12V Fixed Version
In the LTC4218-12, the UV, OV and FB pins are driven by
internal dividers which may need to be fi ltered to prevent
false faults. By placing a bypass capacitor on these pins
the faults are delayed by the RC time constant. Use the R
IN
value from the electrical table for this calculation.
In cases where the fi xed thresholds need a slight adjustment, placing a resistor from the UV or OV pins to V
DD
or GND will adjust the threshold up or down. Likewise,
placing a resistor between FB pin to OUT or GND adjusts
the threshold. Again, use the R
value from the electrical
IN
table for this calculation.
An example in Figure 4 raises the UV turn-on voltage from
9.88V to 10.5V. Increasing the UV level requires adding a
resistor between UV and ground. The resistor, (R
SHUNT1
),
can be calculated using electrical table parameters as
follows:
RV
•
OLD
IN
()
R
SHUNT
=
1
VV
()
–
NEWOLD
189 88
k
=
•.
10 5
()
.–
9988
.
287
=k
12
4218f
Page 13
APPLICATIONS INFORMATION
LTC4218-12
Figure 4. Adjusting LTC4218-12 Thresholds
In this same fi gure the OV threshold is lowered from
15.05V to 13.5V. Decreasing the OV threshold requires
adding a resistor between V
be calculated as follows:
V
DD
R
SHUNT2
OV
UV
R
SHUNT1
4218 F04
and OV. This resistor can
DD
12V
LTC4218
R
S
2mΩQ1Si7108DN
R1
10Ω
R
R2
10k
R3
20k
GATE
1k
SENSE–GATE
SENSE
V
DD
UV
LTC4218DHC-12
FLT
C
0.1μF
0.1μF
Figure 5. 6A, 12V Card Resident Application
TIMER
T
INTV
CC
C1
SOURCE
+
12V
PG
I
MON
GND
+
C
GATE
0.01μF
ADC
V
12V
6A
C
L
330μF
4218 F05
OUT
RV
•
IN
R
SHUNT
k
1815 05
1 235
•.
.
()
=
2
V
TH
()
⎛
13 5 1 235
.–.
()
⎜
115 05 13 5
.–.
()
⎝
Use the equation for R
⎛
()
OLD
⎜
⎜
⎜
⎝
SHUNT1
–
VV
NEW
VV
()
OLD
–
OV TH
NNEW
⎞
1 736
.
=M
⎟
⎠
for increasing the OV and
FB thresholds. Likewise, use the equation for R
⎞
()
⎟
=
⎟
⎟
⎠
SHUNT2
for
decreasing the UV and FB thresholds.
Design Example
Consider the following design example (Figure 5): V
12V, I
V
OVOFF
= 7.5A. I
MAX
= 15.05V, V
INRUSH
= 1A, CL = 330μF, V
= 10.5V. A current limit fault
PWRGD
UVON
=
IN
= 9.88V,
triggers an automatic restart of the power up sequence.
The selection of the sense resistor, (R
), is set by the
S
overcurrent threshold of 15mV:
R
S
= 15mV/I
= 15mV/7.5A = 0.002Ω
MAX
The MOSFET should be sized to handle the power dissipation during the inrush charging of the output capacitor
. The method used to determine the power in Q1 is
C
OUT
the principal:
= Energy in CL = Energy in Q1
E
C
Thus:
= ½ CV2 = ½ (330μF)(12)2 = 0.048J
E
C
Calculate the time it takes to charge up C
CV
t
CHARGUP
•
LIN
===
I
INRUSH
•33012
µFV
1
A
The inrush current is set to 1A using C
CC
==≅
GATEL
I
GATE UP
I
INRUSH
()
µF
24
1
µA
A
OUT
4
GATE
001
ms
:
.330
:
µF
The average power dissipated in the MOSFET:
P
DISS
= EC/t
CHARGUP
= 0.048J/4ms = 12W
The SOA (safe operating area) curves of candidate MOSFETs
must be evaluated to ensure that the heat capacity of the
package can stand 12W for 4ms. The SOA curves of the
Vishay Siliconix Si7108DN provide 1.5A at 10V (15W) for
100ms, satisfying the requirement.
Next, the power dissipated in the MOSFET during overcurrent
must be limited. The active current limit uses a timer to
prevent excessive energy dissipation in the MOSFET. The
worst-case power occurs when the voltage versus current
profi le of the foldback current limit is at the maximum. This
occurs when the current is 6A and the voltage is one half
of 12V or (6V). See the Current Limit Sense Voltage vs
FB Voltage in the Typical Performance curves to view this
profi le. In order to survive 36W, the MOSFET SOA dictates
a maximum time at this power level. The Si7108DN allows
60W for 10ms or less. Therefore, it is acceptable to set the
current limit timeout using C
to be 1.2ms:
T
= 1.2ms/12[ms/μF] = 0.1μF
C
T
4218f
13
Page 14
LTC4218
APPLICATIONS INFORMATION
After the 1.2ms timeout the ⎯F⎯L⎯T pin needs to pull down
on the UV pin to restart the power-up sequence.
Since the default values for overvoltage, undervoltage and
powergood thresholds for the 12V fi xed version match
the requirements, no external components are required
for the UV, OV and FB pins.
The fi nal schematic results in very few external components. Resistor R1 (10Ω) prevents high frequency
oscillations in Q1 while R
of 1k isolates C
GATE
GATE
during
fast turn-off. The pull-up resistor, (R2), connects to the
PG pin while the 20k (R3) converts the I
current to a
MON
voltage at a ratio:
µAmVmV
V
IMON
6672
==
••
20
k
A
V
0 267.
.
A
In addition, there is a 0.1μF bypass (C1) on the INTVCC
pin.
Layout Considerations
To achieve accurate current sensing, a Kelvin connection
for the sense resistor is recommended. The PCB layout
should be balanced and symmetrical to minimize wiring
errors. In addition, the PCB layout for the sense resistors
and the power MOSFETs should include good thermal
management techniques for optimal device power dissipation. A recommended PCB layout for the sense resistor
and power MOSFET is illustrated in Figure 6.
In Hot Swap applications where load currents can be 6A,
narrow PCB tracks exhibit more resistances than wider
tracks and operate at elevated temperatures. The minimum
trace width for 1oz copper foil is 0.02” per amp to make sure
the trace stays at a reasonable temperature. Using 0.03”
per amp or wider is recommended. Note that 1oz copper
exhibits a sheet resistance of about 0.5mΩ/square. Small
resistances add up quickly in high current applications
It is also important to put C1, the bypass capacitor for the
INTV
pin, as close as possible between the INTVCC and
CC
GND. Place the 10Ω resistor as close as possible to Q1.
This will limit the parasitic trace capacitance that leads to
Q1 self-oscillation.
Additional Applications
The LTC4218 has a wide operating range from 2.9V to
26.5V. The UV, OV and PG thresholds are set with a few
resistors. All other functions are independent of supply
voltage.
The last page includes a 24V application with a UV threshold
of 19.8V, an OV threshold of 28.3V and a PG threshold
of 20.75V. Figure 7 shows a 3.3V application with a UV
threshold of 2.87V, an OV threshold of 3.77V and a PG
threshold of 3.05V.
14
R
S
LTC4218
C
Q1
R1
Figure 6. Recommended Layout
4218 F06
3.3V
R
Q1
S
2mΩ
Si7104DN
3.3V
R7
10k
R
20k
R
1k
MON
14.7k
GATE
C
GATE
0.01μF
R5
17.4k
3.16k
10k
R1
10Ω
+
LTC4218GN
CC
GND
SOURCE
I
FB
PG
OUT
SENSE–GATE
C
T
0.1μF
C1
SENSE
V
DD
UV
FLT
OV
TIMER
INTV
R2
R3
R4
0.1μF
Figure 7. 3.3V, 6A Card Resident Application
R6
10k
ADC
V
OUT
3.3V
6A
+
C
L
330μF
4218 F07
4218f
Page 15
PACKAGE DESCRIPTION
LTC4218
DHC Package
16-Lead Plastic DFN (5mm × 3mm)
(Reference LTC DWG # 05-08-1706)
3.50 ±0.05
2.20 ±0.05
0.65 ±0.05
1.65 ±0.05
(2 SIDES)
0.25 ± 0.05
0.50 BSC
4.40 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
NOTE:
1. DRAWING PROPOSED TO BE MADE VARIATION OF VERSION (WJED-1) IN JEDEC
PACKAGE OUTLINE MO-229
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
PACKAGE
OUTLINE
TOP MARK
(SEE NOTE 6)
16-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.045 ±.005
5.00 ±0.10
(2 SIDES)
PIN 1
0.200 REF
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
3.00 ±0.10
(2 SIDES)
0.75 ±0.05
R = 0.20
1.65 ± 0.10
(2 SIDES)
0.00 – 0.05
TYP
GN Package
.189 – .196*
(4.801 – 4.978)
16
15
14
13
12 11 10
9
4.40 ±0.10
(2 SIDES)
BOTTOM VIEW—EXPOSED PAD
.009
(0.229)
REF
R = 0.115
TYP
0.25 ± 0.05
0.50 BSC
169
18
0.40 ± 0.10
PIN 1
NOTCH
(DHC16) DFN 1103
.254 MIN
RECOMMENDED SOLDER PAD LAYOUT
.007 – .0098
(0.178 – 0.249)
.016 – .050
NOTE:
1. CONTROLLING DIMENSION: INCHES
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
(0.406 – 1.270)
(MILLIMETERS)
INCHES
.150 – .165
.0250 BSC.0165 ±.0015
.015
(0.38 ± 0.10)
0° – 8° TYP
± .004
× 45°
.229 – .244
(5.817 – 6.198)
.0532 – .0688
(1.35 – 1.75)
.008 – .012
(0.203 – 0.305)
TYP
12
.150 – .157**
(3.810 – 3.988)
5
4
678
3
.004 – .0098
(0.102 – 0.249)
.0250
(0.635)
GN16 (SSOP) 0204
BSC
4218f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
Page 16
LTC4218
TYPICAL APPLICATION
24V, 6A Card Resident Application
+
ADC
V
OUT
24V
6A
330μF
4218 TA02
24V
*DIODES INC., SMAJ24A
215k
4.32k
10k
*
0.1μF
0.1μF
2mΩ
SENSE–GATE
SENSE
V
DD
UV
FLT
OV
TIMER
INTV
CC
Si7880ADP
10Ω
+
LTC4218GN
GND
SOURCE
I
MON
PG
158k
1k
0.01μF
FB
10k
24V
10k
20k
RELATED PARTS
PART NUMBERDESCRIPTIONCOMMENTS
LTC1421Dual Channel, Hot Swap ControllerOperates from 3V to 12V, Supports –12V, SSOP-24
LTC1422Single Channel, Hot Swap ControllerOperates from 2.7V to 12V, SO-8
LTC1642ASingle Channel, Hot Swap ControllerOperates from 3V to 16.5V, Overvoltage Protection up to 33V, SSOP-16
LTC1645Dual Channel, Hot Swap ControllerOperates from 3V to 12V, Power Sequencing, SO-8 or SO-14
LTC1647-1/LTC1647-2/
LTC1647-3
LTC4210Single Channel, Hot Swap ControllerOperates from 2.7V to 16.5V, Active Current Limiting, SOT23-6
LTC4211Single Channel, Hot Swap ControllerOperates from 2.5V to 16.5V, Multifunction Current Control, MSOP-8 or MSOP-10
LTC4212Single Channel, Hot Swap ControllerOperates from 2.5V to 16.5V, Power-Up Timeout, MSOP-10
LTC4214Negative Voltage, Hot Swap ControllerOperates from – 6V to –16V, MSOP-10
LTC4215Single Hot Swap Controller with ADC
LT4220Positive and Negative Voltage, Dual
LTC4221Dual Hot Swap Controller/SequencerOperates from 1V to 13.5V, Multifunction Current Control, SSOP-16
LTC4230Triple Channel, Hot Swap ControllerOperates from 1.7V to 16.5V, Multifunction Current Control, SSOP-20
LTC4245Quad Hot Swap Controller with ADC and
Dual Channel, Hot Swap ControllersOperates from 2.7V to 16.5V, SO-8 or SSOP-16
Operates from 2.9V to 15V, Digitally Monitors Voltage and Current with 8-Bit ADC
and I
2
C Interface
Operates from ±2.7V to ±16.5V, SSOP-16
Channel, Hot Swap Controller
2
C Interface
I
3.3V, 5V and ±12V for CompactPCI, or 3.3V, 3.3V Auxillary and 12V for PCIExpress, Monitors Voltage and Current with 8-Bit ADC