Datasheet LTC3731 Datasheet (LINEAR TECHNOLOGY)

Page 1
LTC3731
3-Phase, 600kHz,
Synchronous Buck Switching
FEATURES
3-Phase Current Mode Controller with Onboard MOSFET Drivers
±5% Output Current Matching Optimizes Thermal Performance and Size of Inductors and MOSFETs
Differential Amplifier Accurately Senses V
±1% V
Reduced Power Supply Induced Noise
±10% Power Good Output Indicator
250kHz to 600kHz Per Phase, PLL, Fixed Frequency
PWM, Stage SheddingTM or Burst Mode® Operation
OPTI-LOOP® Compensation Minimizes C
Adjustable Soft-Start Current Ramping
Short-Circuit Shutdown Timer with Defeat Option
Overvoltage Soft Latch
Adjustable Undervoltage Lockout Threshold
Selectable Phase Output for Up to 12-Phase Operation
Available in 5mm × 5mm QFN and 36-Pin Narrow
Accuracy Over Temperature
REF
OUT
OUT
(0.209") SSOP Packages
U
APPLICATIO S
Desktop Computers and Servers
High Performance Notebook Computers
High Output Current DC/DC Power Supplies
Regulator Controller
U
DESCRIPTIO
The LTC®3731 is a PolyPhase® synchronous step-down switching regulator controller that drives all N-channel ex­ternal power MOSFET stages in a phase-lockable fixed fre­quency architecture. The 3-phase controller drives its output stages with 120° phase separation at frequencies of up to 600kHz per phase to minimize the RMS current losses in both the input and output filter capacitors. The 3-phase technique effectively triples the fundamental frequency, improving transient response while operating each control­ler at an optimal frequency for efficiency and ease of ther­mal design. Light load efficiency is optimized by using a choice of output Stage Shedding or Burst Mode operation.
A differential amplifier provides true remote sensing of both the high and low side of the output voltage at the point of load. The precision reference supports output voltages from
0.6V to 6V. Soft-start and a defeatable, timed short-circuit shutdown
protect the MOSFETs and the load. Current foldback provides protection for the external MOSFETs under short-circuit or overload conditions.
, LTC and LT are registered trademarks of Linear Technology Corporation. Burst Mode, OPTI-LOOP and PolyPhase are registered trademarks of Linear Technology Corporation. Stage Shedding is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents, including 5481178, 5929620, 6177787, 6144194, 6100678, 5408150, 6580258, 6462525, 6304066, 5705919.
TYPICAL APPLICATIO
V
CC
4.5V TO 7V
POWER GOOD INDICATOR
OPTIONAL SYNC IN
36k
V
IN
12k
5k
6.04k
U
LTC3731
SW1
SENSE1 SENSE1
SW2
PGND
SENSE2 SENSE2
SW3
SENSE3 SENSE3
TG1V
BG1
TG2
BG2
TG3
BG3
0.8µH
0.003
+ –
V
IN
0.8µH
0.003
+ –
V
IN
0.8µH
0.003
+ –
+
+
0.01µF
CC
BOOST1 BOOST2 BOOST3
PGOOD PLLIN
PLLFLTR
UVADJ
I
TH
RUN/SS
SGND EAIN
DIFFOUT
IN
+
IN
10µF
0.1µF
SW3 SW2 SW1
7.5k
680pF
100pF
Figure 1. High Current Triple Phase Step-Down Converter
C 470µF 4V
3731 F01
22µF 35V
V
OUT
1.35V 55A
OUT
V
IN
5V TO 28V
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LTC3731
WWWU
ABSOLUTE AXI U RATI GS
(Note 1)
Topside Driver Voltages (BOOSTN) ............ 38V to –0.3V
Switch Voltage (SW Boosted Driver Voltage (BOOST Peak Output Current <1ms (TG Supply Voltages (V
)...................................32V to –5V
N
– SWN) .... 7V to –0.3V
N
, BGN) ..................... 5A
N
, VDR), PGOOD
CC
Pin Voltage .................................................. 7V to –0.3V
RUN/SS, PLLFLTR, PLLIN, UVADJ,
FCB Voltages ............................................. VCC to –0.3V
SENSE
+
, SENSE– Voltages ........................ 5.5V to –0.3V
UU
W
PACKAGE/ORDER I FOR ATIO
TOP VIEW
1
V
CC
2
PLLIN
3
PLLFLTR
4
FCB
+
5
IN
6
IN
7
DIFFOUT
8
EAIN
9
SGND
+
10
SENSE1
11
SENSE1
+
12
SENSE2
13
SENSE2
14
SENSE3
+
15
SENSE3
16
RUN/SS
17
I
TH
18
UVADJ
G PACKAGE
T
36-LEAD PLASTIC SSOP
= 125°C, θJA = 95°C/W, θJC = 32°C/W
JMAX
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
CLKOUT
PGOOD
BOOST1
TG1
SW1
BOOST2
TG2
SW2
V
DR
BG1
PGND
BG2
BG3
SW3
TG3
BOOST3
PHASMD
SGND2
ITH Voltage ................................................ 2.4V to –0.3V
Operating Ambient Temperature Range
LTC3731C .................................................... 0°C to 70°C
LTC3731I ................................................. –40°C to 85°C
Junction Temperature (Note 2)............................. 125°C
Storage Temperature Range ..................–65°C to 125°C
Lead Temperature G Package (Soldering, 10sec).. 300°C
Peak Body Temperature UH Package................... 240°C
IN+FCB
PLLFLTR
PLLIN
CLKOUT
BOOST1
TG1
TG3
BOOST3
PHASMD/PG
SW1
SW3
24
23
22
21
20
19
18
17
BOOST2
TG2
SW2
V
CC
BG1
PGND
BG2
BG3
32 31 30 29 28 27 26 25
1IN
DIFFOUT
2
EAIN
3
+
SENSE1
4
SENSE1
5
+
SENSE2
6
SENSE2
7
SENSE3
8
9 10 11 12 13 14 15 16
+
EXPOSED PAD (PIN 33) IS SIGNAL GROUND
(SGND) AND MUST BE SOLDERED TO PCB
T
JMAX
33
TH
I
UVADJ
RUN/SS
SENSE3
UH PACKAGE
32-LEAD PLASTIC QFN
= 125°C, θJA = 34°C/W
ORDER PART NUMBER UH PART MARKING
LTC3731CUH LTC3731IUH
3731 3731I
Order Options
ORDER PART NUMBER
LTC3731CG LTC3731IG
Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at T
The ● denotes the specifications which apply over the full operating
= 25°C. VCC = V
A
= 5V unless otherwise noted.
RUN/SS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Main Control Loop
V
REGULATED
Regulated Voltage at IN
+
V
= 1.2V (Note 3) 0.596 0.600 0.604 V
ITH
LTC3731I
0.594 0.600 0.606 V
0.591 0.609 V
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LTC3731
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at T
The ● denotes the specifications which apply over the full operating
= 25°C. VCC = V
A
= 5V unless otherwise noted.
RUN/SS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
SENSEMAX
I
MATCH
V
LOADREG
V
REFLNREG
g
m
g
mOL
V
FCB
I
FCB
V
BINHIBIT
Maximum Current Sense Threshold V
Maximum Current Threshold Match Worst-Case Error at V
= 0.5V, V
EAIN
V
SENSE1–, VSENSE2–, VSENSE3–
Open, 65 75 85 mV
ITH
LTC3731I
SENSEMAX
= 0.6V, 1.8V
62 75 88 mV
60 90 mV
–5 5 %
Output Voltage Load Regulation (Note 3)
Measured in Servo Loop, ∆I LTC3731I Measured in Servo Loop, ∆I LTC3731I
Voltage = 1.2V to 0.7V
TH
Voltage = 1.2V to 2V
TH
0.1 0.5 %
0.1 0.7 % –0.1 –0.5 % –0.1 –0.7 %
Output Voltage Line Regulation VCC = 4.5V to 7V 0.03 %/V
Transconductance Amplifier g
m
ITH = 1.2V, Sink/Source 25µA (Note 3) LTC3731I
4 5 6 mmho 3 5 7 mmho
Transconductance Amplifier GBW ITH = 1.2V (gm • ZL, ZL = Series 1k-100kΩ-1nF) 3 MHz
Forced Continuous Threshold
LTC3731I
FCB Bias Current V
= 0.65V 0.2 0.7 µA
FCB
Burst Inhibit Threshold Measured at FCB Pin VCC – 1.5 V
0.58 0.60 0.62 V
0.54 0.60 0.66 V
– 0.7 V
CC
CC
– 0.3 V
UVR Undervoltage RUN/SS Reset VCC Lowered Until the RUN/SS Pin is Pulled Low 3.3 3.8 4.5 V
UVADJ Undervoltage Lockout Threshold 1.13 1.18 1.23 V
I
UVADJ
I
Q
I
RUN/SS
V
RUN/SS
V
RUN/SSARM
Undervoltage Bias Current At UVADJ Threshold 0.2 50 nA
Input DC Supply Current (Note 4) Normal Mode V Shutdown V
Soft-Start Charge Current V
RUN/SS Pin ON Threshold V
RUN/SS Pin Arming Threshold V
= 5V 2.3 3.5 mA
CC
= 0V 50 100 µA
RUN/SS
= 1.9V –0.8 –1.5 – 2.5 µA
RUN/SS
, Ramping Positive 1 1.5 1.9 V
RUN/SS
, Ramping Positive Until Short-Circuit 3.8 4.5 V
RUN/SS
Latch-Off is Armed
V
RUN/SSLO
I
SCL
I
SDLHO
I
SENSE
RUN/SS Pin Latch-Off Threshold V
RUN/SS Discharge Current Soft-Short Condition V
Shutdown Latch Disable Current V
, Ramping Negative 3.2 V
RUN/SS
= 0.375V, V
EAIN
= 0.375V, V
EAIN
= 4.5V 1.5 5 µA
RUN/SS
= 4.5V –5 – 1.5 µA
RUN/SS
SENSE Pins Source Current SENSE1+, SENSE1–, SENSE2+, SENSE2–, SENSE3
+
13 20 µA
SENSE3– All Equal 1.2V; Current at Each Pin
DF
MAX
TG tR,t
BG t
R, tF
TG/BG t
Maximum Duty Factor In Dropout, V
Top Gate Rise Time C
F
Top Gate Fall Time C
Bottom Gate Rise Time C Bottom Gate Fall Time C
Top Gate Off to Bottom Gate On Delay All Controllers, C
1D
SENSEMAX
= 3300pF 30 90 ns
LOAD
= 3300pF 40 90 ns
LOAD
= 3300pF 30 90 ns
LOAD
= 3300pF 20 90 ns
LOAD
30mV 95 98.5 %
= 3300pF Each Driver 50 ns
LOAD
Synchronous Switch-On Delay Time
BG/TG t
Bottom Gate Off to Top Gate On Delay All Controllers, C
2D
= 3300pF Each Driver 60 ns
LOAD
Top Switch-On Delay Time
t
ON(MIN)
Minimum On-Time Tested with a Square Wave (Note 5) 110 ns
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LTC3731
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at T
The ● denotes the specifications which apply over the full operating
= 25°C. VCC = V
A
= 5V unless otherwise noted.
RUN/SS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Good Output Indication
V
PGL
I
PGOOD
I
PGOOD
V
PGTHNEG
V
PGTHPOS
V
PGDLY
PGOOD Voltage Output Low I
PGOOD Output Leakage V PGOOD/PHASMD Bias I 0 ≤ V
PGOOD Trip Thresholds V V
Ramping Negative HGOOD Goes Low After V
DIFFOUT
V
Ramping Positive 7 10 13 %
DIFFOUT
Power Good Fault Report Delay After V
= 2mA, G Package 0.1 0.3 V
PGOOD
I
= 1.6mA, UH Package 0.5 1.0 V
PGOOD
= 5V, G Package 1 µA
PGOOD
PHASMD/PG
DIFFOUT
EAIN
VCC, UH Package –10 ±310 µA
with Respect to Set Output Voltage,
Delay –7 –10 –13 %
UVDLY
is Forced Outside the PGOOD Thresholds 100 150 µs
Oscillator and Phase-Locked Loop
f
NOM
f
LOW
f
HIGH
V
PLLTH
R
PLLIN
I
PLLFLTR
R
RELPHS
Nominal Frequency V
Lowest Frequency V
Highest Frequency V
= 1.2V 360 400 440 kHz
PLLFLTR
= 0V 190 225 260 kHz
PLLFLTR
= 2.4V 600 680 750 kHz
PLLFLTR
PLLIN Input Threshold Minimum Pulse Width > 100ns 1 V
PLLIN Input Resistance 50 k
Phase Detector Output Current Sinking Capability f Sourcing Capability f
PLLIN PLLIN
< f > f
OSC OSC
20 µA 20 µA
Controller 2-Controller 1 Phase 120 Deg Controller 3-Controller 1 Phase 240 Deg
CLKOUT Controller 1 TG to CLKOUT Phase PHASMD = 0V 30 Deg
PHASMD = 5V 60 Deg
Differential Amplifier
A
V
V
OS
Differential Gain 0.995 1.000 1.005 V/V
Input Offset Voltage Magnitude IN+ = IN
= 1.2V, I
= 1mA, 0.5 5 mV
OUT
Input Referred; Gain = 1
CM Common Mode Input Voltage Range 0 V
+
CMRR Common Mode Rejection Ratio 0V < IN
I
CL
GBP Gain Bandwidth Product I
Output Current Sourcing 10 40 mA
= 1mA 2 MHz
OUT
= IN
< 5V, I
= 1mA, Input Referred 50 70 dB
OUT
CC
SR Slew Rate RL = 2k 5 V/µs
V
O(MAX)
R
IN
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2: T dissipation P
LTC3731CG/LTC3731IG: T LTC3731CG/LTC3731IG: TJ = T LTC3731CUH/LTC3731IUH: T
Note 3: The IC is tested in a feedback loop that includes the differential amplifier loaded with 100µA to ground driving the error amplifier and
Maximum High Output Voltage I
= 1mA V
OUT
– 1.2 V
CC
– 0.8 V
CC
Input Resistance Measured at IN+ Pin 80 k
servoing the resultant voltage to the midrange point for the error amplifier (V
= 1.2V).
ITH
Note 4: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See Applications Information.
is calculated from the ambient temperature TA and power
J
according to the following formula:
D
= TA + (PD × 95°C/W)
J
+ (PD × 32°C/W)
CASE
= TA + (PD × 34°C/W)
J
Note 5: The minimum on-time condition corresponds to an inductor peak­to-peak ripple current of 40% of I
(see minimum on-time
MAX
considerations in the Applications Information Section). Note 6: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability.
V
4
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LTC3731
U
UU
PI FU CTIO S
BG1 to BG3: High Current Gate Drives for Bottom N-Channel MOSFETs. Voltage swing at these pins is from ground to V
BOOST1 to BOOST3: Positive Supply Pins to the Topside Floating Drivers. Bootstrapped capacitors, charged with external Schottky diodes and a boost voltage source, are connected between the BOOST and SW pins. Voltage swing at the BOOST pins is from boost source voltage (typically V
to this boost source voltage + VIN (where V
CC)
nal MOSFET supply rail).
CLKOUT: Output clock signal available to synchronize other controller ICs for additional MOSFET stages/phases.
DIFFOUT: Output of the Remote Output Voltage Sensing Differential Amplifier.
EAIN: This is the input to the error amplifier that compares the feedback voltage to the internal 0.6V reference voltage.
FCB: Forced Continuous Control Input. The voltage applied to this pin sets the operating mode of the controller. The forced continuous current mode is active when the applied voltage is less than 0.6V. Burst Mode operation will be active when the pin is allowed to float and a Stage Shedding mode will be active if the pin is tied to the V this pin prior to the application of voltage on the V
PGOOD: This open-drain output is pulled low when the output voltage has been outside the PGOOD tolerance window for the V
IN
with internal precision resistors. This provides true remote sensing of both the positive and negative load terminals for precise output voltage control.
ITH: Error Amplifier Output and Switching Regulator Com­pensation Point. All three current comparator’s thresholds increase with this control voltage.
PGND: Driver Power Ground. This pin connects directly to the sources of the bottom N-channel external MOSFETs and the (–) terminals of C
PHASMD: This pin determines the phase shift between the first controller’s rising TG signal and the rising edge of the CLKOUT signal. Logic 0 yields 30 degrees and Logic 1 yields 60 degrees.
Note: the PHASMD and PGOOD functions are internally tied together in the LTC3731 UH package.
delay of approximately 100µs.
PGDLY
+
, IN–: Inputs to a precision, unity-gain differential amplifier
pin. (Do not apply voltage directly to
CC
.
IN
is the exter-
IN
pin.)
CC
CC
.
PLLIN: Synchronization Input to Phase Detector. This pin is internally terminated to SGND with 50k. The phase-locked loop will force the rising top gate signal of controller 1 to be synchronized with the rising edge of the PLLIN signal.
PLLFLTR: The phase-locked loop’s lowpass filter is tied to this pin. Alternatively, this pin can be driven with an AC or DC voltage source to vary the frequency of the internal oscillator. (Do not apply voltage directly to this pin prior to the application of voltage on the V
RUN/SS: Combination of Soft-Start, Run Control Input and Short-Circuit Detection Timer. A capacitor to ground at this pin sets the ramp time to full current output as well as the time delay prior to an output voltage short-circuit shutdown. A minimum value of 0.01µF is recommended on this pin.
SENSE1+, SENSE2+, SENSE3+, SENSE1–, SENSE2–, SENSE3–:
The Inputs to Each Differential Current Comparator. The I voltage and built-in offsets between SENSE– and SENSE+ pins, in conjunction with R
SGND: Signal Ground. This pin must be routed separately under the IC to the PGND pin and then to the main ground plane. The exposed pad on the LTC3731 UH package is SGND and must be soldered to the PCB.
SW1 to SW3: Switch Node Connections to Inductors. Voltage swing at these pins is from a Schottky diode (external) voltage drop below ground to V the external MOSFET supply rail).
TG1 to TG3: High Current Gate Drives for Top N-channel MOSFETs. These are the outputs of floating drivers with a voltage swing equal to the boost voltage source super­imposed on the switch node voltage SW.
UVADJ: Input to the Undervoltage Shutdown Comparator. When the applied input voltage is less than 1.2V, this com­parator turns off the output MOSFET driver stages and dis­charges the RUN/SS capacitor.
V
: Main Supply Pin. This pin supplies the controller
CC
circuit power. In the LTC3731 UH package, it also supplies the high power pulses to drive the external MOSFET gates. This pin needs to be very carefully and closely decoupled to the IC’s PGND pin.
VDR: (LTC3731G Package Only) Supplies power to the bot-tom gate drivers only. This pin needs to be very carefully and closely decoupled to the IC’s PGND pin.
CC
SENSE
pin.)
, set the current trip threshold level.
(where V
IN
TH
pin
IN
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LTC3731
UW
TYPICAL PERFOR A CE CHARACTERISTICS
Efficiency vs I
100
V
= OPEN
FCB
90
V
= 5V
FCB
80
70
60
50
40
EFFICIENCY (%)
30
20
10
0
0.1
V
= 0V
FCB
LOAD CURRENT (A)
Reference Voltage vs Temperature
610
605
600
(Figure 14) Efficiency vs V
OUT
100
95
90
85
80
75
70
EFFICIENCY (%)
65
VIN = 8V
= 1.5V
V
OUT
1 10 100
3731 G01
60
55
50
0
Error Amplifier gm vs Temperature
6.0
5.5
(mmho)
m
5.0
IL = 45A
5
(Figure 14) Efficiency vs Frequency (Figure 14)
IN
100
95
VIN = 5V
90
VIN = 12V
85
EFFICIENCY (%)
VIN = 20V
80
75
200
Maximum I
300
FREQUENCY (kHz)
SENSE
I
LOAD
V
OUT
400
500
Threshold vs
10
VIN (V)
IL = 15A
15
V
= 1.5V
OUT
f = 250kHz
20
3731 G02
25
Temperature
85
80
VO = 1.75V
THRESHOLD (mV)
75
SENSE
VO = 0.6V
= 20A
= 1.5V
VIN = 8V
600
3731 G03
595
REFERENCE VOLTAGE (mV)
590
–50
0 255075
–25 125100
TEMPERATURE (°C)
3731 G04
4.5
ERROR AMPLIFIER g
4.0 –50 0 25 50 75–25 125100
TEMPERATURE (°C)
Oscillator Frequency vs Temperature Operating Frequency vs V
700
V
PLLFLTR
600
500
400
V
PLLFLTR
300
FREQUENCY (kHz)
200
V
PLLFLTR
100
0
= 2.4V
V
PLLFLTR
= 1.2V
= 0V
TEMPERATURE (°C)
= 5V
3731 G07
700
600
500
400
300
OPERATING FREQUENCY (kHz)
200
0.5 1 1.5 22.5
0
PLLFLTR PIN VOLTAGE (V)
3731 G05
PLLFLTR
3731 G08
70
MAXIMUM I
65
–50 0 25 50 75–25 125100
TEMPERATURE (°C)
Undervoltage Reset Voltage vs Temperature
5
4
3
2
UNDER VOLTAGE RESET (V)
1
0
–50 0 25 50 75–25 12510050 0 255075–25 125100
TEMPERATURE (°C)
3731 G06
3731 G09
6
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UW
TYPICAL PERFOR A CE CHARACTERISTICS
LTC3731
Short-Circuit Arming and Latchoff vs Temperature Supply Current vs Temperature
5
ARMING
4
LATCHOFF
3
2
RUN/SS PIN VOLTAGE (V)
1
0
TEMPERATURE (°C)
3731 G10
VCC = 5V
2.8
2.4
2.0
1.6
1.2
0.8
SUPPLY CURRENT (mA)
0.4
0
TEMPERATURE (°C)
Maximum Current Sense
Maximum I
80
70
60
(mV)
50
SENSE
40
30
MAXIMUM I
20
10
0
0
1
SENSE
2
V
RUN/SS
vs V
RUN/SS
3
4
VOLTAGE (V)
56
3731 G13
Threshold vs Duty Factor
75
50
VOLTAGE (mV)
25
SENSE
I
0
0
20 40 60 80
DUTY FACTOR (%)
3731 G11
3731 G14
100
80
60
40
20
0
100
RUN/SS Pull-Up Current vs Temperature
2.5 V
RUN/SS
SHUTDOWN CURRENT (µA)
2.0
1.5
1.0
0.5
RUN/SS PULLUP CURRENT (µA)
0
50 0 255075–25 12510050 0 255075–25 12510050 0 255075–25 125100
Peak Current Threshold vs V
75
60
45
30
15
VOLTAGE THRESHOLD (mV)
0
SENSE
I
–15
0
= 1.9V
TEMPERATURE (°C)
3731 G12
ITH
0.6 1.2 1.8 2.4 V
(V)
ITH
3731 G15
Percentage of Nominal Output vs Peak I
80
70
60
50
40
VOLTAGE (mV)
30
SENSE
20
PEAK I
10
0
0
PERCENTAGE OF NOMINAL OUTPUT VOLTAGE (%)
(Foldback)
SENSE
2010 30 50 70 90
60
40
Maximum Duty Factor vs Temperature
100
98
96
94
92
MAXIMUM DUTY FACTOR (%)
80
100
3731 G16
90
50 0 255075–25 125100
TEMPERATURE (°C)
V
PLLFLTR
= 0V
3731 G17
PIN CURRENT (µA)
–10
SENSE
I
–20
–30
40
30
20
10
0
Pin Current vs V
I
SENSE
0
1
2
V
(V)
OUT
OUT
34
3731 G18
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LTC3731
UW
TYPICAL PERFOR A CE CHARACTERISTICS
Differential Amplifier Gain-Phase
0
0
V
OUT
AC, 20mV/DIV
V
SW1
10V/DIV
V
SW2
10V/DIV
V
SW3
10V/DIV
–3
–6
GAIN (dB)
–9
–12
–15
Shed Mode at 1 Amp, Light Load Current (Circuit of Figure 14)
0001
0.01 FREQUENCY (MHz)
0.1
1
3731 G19
V
OUT
AC, 20mV/DIV
V
SW1
10V/DIV
V
SW2
10V/DIV
V
SW3
10V/DIV
–45
PHASE (DEG)
–90
–135
–180
–225
10
Burst Mode at 1 Amp, Light Load Current (Circuit of Figure 14)
AC, 20mV/DIV
8
= 12V
V
IN
= 1.5V
V
OUT
V
= V
FCB
CC
FREQUENCY = 250kHz
4µs/DIV 4µs/DIV
Continuous Mode at 1 Amp, Light Load Current (Circuit of Figure 14)
V
OUT
V
SW1
10V/DIV
V
SW2
10V/DIV
V
SW3
10V/DIV
VIN = 12V V
= 1.5V
OUT
= 0V
V
FCB
FREQUENCY = 250kHz
4µs/DIV 20µs/DIV
V
= 12V
IN
= 1.5V
V
OUT
V
= OPEN
FCB
3731 G20
FREQUENCY = 250kHz
3731 G21
Transient Load Current Response: 0 Amp to 50 Amp (Circuit of Figure 14)
V
OUT
AC, 20mV/DIV
I
LOAD
20A/DIV
V
= 12V
IN
V
= 1.5V
OUT
= V
V
FCB
CC
3731 G22 3731 G23
FREQUENCY = 250kHz
3731fb
Page 9
LTC3731
U
U
W
FU CTIO AL DIAGRA
PGOOD**
R1
F
IN
R
LP
C
LP
PHASMD**
R2
PLLIN
PLLFLTR
CLKOUT
100µs DELAY
FCB
IN
+
IN
DIFFOUT
EAIN
I
TH
C
C
R
C
UVADJ
1.2V
PROTECTION
0.6V
0.600V
0.660V
50k
+
V
FB
PHASE DET
OSCILLATOR
+
EA
+
+
CLK1
CLK2 CLK3
0.66V
+
EAIN
+
0.54V
FCB
40k40k
A1
+
40k40k
OV
DUPLICATE FOR SECOND AND THIRD CONTROLLER CHANNELS
DROP
OUT DET
5(VFB)
1.5µA
6V
0.86V
SLOPE
COMP
CLAMP
SRQ
I
1
SS
5(VFB)
Q
0.55V
+
SHDN
RST
2.4V
FCB
LATCH
RS
V
CC
+
BOT
B
+
3mV
SHED
RUN
SOFT-
START
FORCE BOT
FCB
SHDN
+
54k54k
UV RESET
SWITCH
LOGIC
I
2
0.600V
INTERNAL
SUPPLY
1.2V
TOP
BOT
V
CC
V
(VDR)***
CC
36k
36k
V
REF
BOOST
TG
SW
BG
PGND
SENSE
SENSE
V
CC
SGND*
RUN/SS
V
CC
+
R
SENSE
V
IN
D
B
C
B
L
+
C
IN
C
OUT
+
V
OUT
V
CC
+
C
CC
C
SS
*THE LTC3731UH USES THE EXPOSED DIE ATTACH PAD FOR THE SGND CONNECTIONS **THE PHASMD AND PGOOD PIN FUNCTIONS ARE TIED TOGETHER IN THE LTC3731 UH PACKAGE ***LTC3731CG/IG ONLY
Figure 2
3731 F02
3731fb
9
Page 10
LTC3731
OPERATIO
U
(Refer to Functional Diagram)
Main Control Loop
The IC uses a constant frequency, current mode step­down architecture. During normal operation, each top MOSFET is turned on each cycle when the oscillator sets the RS latch, and turned off when the main current comparator, I current at which I voltage on the I
, resets each RS latch. The peak inductor
1
resets the RS latch is controlled by the
1
pin, which is the output of the error
TH
amplifier EA. The EAIN pin receives a portion of output voltage feedback signal via the DIFFOUT pin through the external resistive divider and is compared to the internal reference voltage. When the load current increases, it causes a slight decrease in the EAIN pin voltage the 0.6V reference, which in turn causes the I
relative to
voltage to
TH
increase until each inductor’s average current matches one third of the new load current (assuming all three current sensing resistors are equal). In Burst Mode opera­tion and Stage Shedding mode, after each top MOSFET has turned off, the bottom MOSFET is turned on until either the inductor current starts to reverse, as indicated by current comparator I
, or the beginning of the next cycle.
2
The top MOSFET drivers are biased from floating boot­strap capacitor C
, which is normally recharged through
B
an external Schottky diode when the top FET is turned off. When V
decreases to a voltage close to V
IN
, however,
OUT
the loop may enter dropout and attempt to turn on the top MOSFET continuously. The dropout detector counts the number of oscillator cycles that the bottom MOSFET remains off and periodically forces a brief on period to allow C
to recharge.
B
The main control loop is shut down by pulling the RUN/SS pin low. Releasing RUN/SS allows an internal 1.5µA current source to charge soft-start capacitor C C
reaches 1.5V, the main control loop is enabled and the
SS
internally buffered I
voltage is clamped but allowed to
TH
. When
SS
ramp as the voltage on CSS continues to ramp. This “soft­start” clamping prevents abrupt current from being drawn from the input power source. When the RUN/SS pin is low, all functions are kept in a controlled state. The RUN/SS pin is pulled low when the supply input voltage is below 4V, when the undervoltage lockout pin (UVADJ) is below 1.2V, or when the IC die temperature rises above 150°C.
Low Current Operation
The FCB pin is a logic input to select between three modes of operation.
A) Burst Mode Operation
When the FCB pin voltage is below 0.6V, the controller performs as a continuous, PWM current mode synchro­nous switching regulator. The top and bottom MOSFETs are alternately turned on to maintain the output voltage independent of direction of inductor current. When the FCB pin is below V
– 1.5V but greater than 0.6V, the
CC
controller performs as a Burst Mode switching regulator. Burst Mode operation sets a minimum output current level before turning off the top switch and turns off the synchro­nous MOSFET(s) when the inductor current goes nega­tive. This combination of requirements will, at low current, force the I
pin below a voltage threshold that will
TH
temporarily shut off both output MOSFETs until the output voltage drops slightly. There is a burst comparator having 60mV of hysteresis tied to the ITH pin. This hysteresis results in output signals to the MOSFETs that turn them on for several cycles, followed by a variable “sleep” interval depending upon the load current. The resultant output voltage ripple is held to a very small value by having the hysteretic comparator after the error amplifier gain block.
B) Stage Shedding Operation
When the FCB pin is tied to the VCC pin, Burst Mode operation is disabled and the forced minimum inductor current requirement is removed. This provides constant frequency, discontinuous current operation over the wid­est possible output current range. At approximately 10% of maximum designed load current, the second and third output stages are shut off and the phase 1 controller alone is active in discontinuous current mode. This “stage shedding” optimizes efficiency by eliminating the gate charging losses and switching losses of the other two output stages. Additional cycles will be skipped when the output load current drops below 1% of maximum de­signed load
current in order to maintain the output volt­age. This stage shedding operation is not as efficient as Burst Mode operation at very light loads, but does provide lower noise, constant frequency operating mode down to very light load conditions.
10
3731fb
Page 11
OPERATIO
LTC3731
U
(Refer to Functional Diagram)
C) Continuous Current Operation
Tying the FCB pin to ground will force continuous current operation. This is the least efficient operating mode, but may be desirable in certain applications. The output can source or sink current in this mode. When sinking current while in forced continuous operation, the controller will cause current to flow back into the input filter capacitor. If large enough, the input capacitor will prevent the input supply from boosting to unacceptably high levels. See C
IN/COUT
section.
Frequency Synchronization
The phase-locked loop allows the internal oscillator to be synchronized to an external source using the PLLIN pin. The output of the phase detector at the PLLFLTR pin is also the DC frequency control input of the oscillator, which operates over a 250kHz to 600kHz range corresponding to a voltage input from 0V to 2.4V. When locked, the PLL aligns the turn on of the top MOSFET to the rising edge of the synchronizing signal. When no frequency infor­mation is supplied to the PLLIN pin, PLLFLTR goes low, forcing the oscillator to minimum frequency. A DC source can be applied to the PLLFLTR pin to externally set the desired operating frequency. A discharge current of approximately 20µA will be present at the pin with no PLLIN input signal.
Input capacitance ESR requirements and efficiency losses are reduced substantially in a multiphase architecture because the peak current drawn from the input capacitor is effectively divided by the number of phases used and power loss is proportional to the RMS current squared. A 3-stage, single output voltage implementation can reduce input path power loss by 90%.
Differential Amplifier
This amplifier provides true differential output voltage sensing. Sensing both V tion in high current applications and/or applications hav­ing electrical interconnection losses. This sensing also isolates the physical power ground from the physical signal ground preventing the possibility of troublesome “ground loops” on the PC layout and prevents voltage
Selection in the Applications Information
OUT
+
and V
benefits regula-
OUT
errors caused by board-to-board interconnects, particu­larly helpful in VRM designs.
Power Good
The PGOOD pin is connected to the drain of an internal N-channel MOSFET. The MOSFET is turned on once an internal delay of about 100µs has elapsed and the output voltage has been away from its nominal value by greater than 10%. If the output returns to normal prior to the delay timeout, the timer is reset. There is no delay time for the rising of the PGOOD output once the output voltage is within the ±10% “window.”
Phase Mode
The PHASMD pin determines the phase shift between the rising edge of the TG1 output and the rising edge of the CLKOUT signal. Grounding the pin will result in 30 degrees phase shift and tying the pin to V degrees. These phase shift values enable extension to 6­and 12-phase systems. The PGOOD function above and the PHASMD function are tied to a common pin in the UH package.
Undervoltage Shutdown Adjust
The voltage applied to the UVADJ pin is compared to the internal 1.2V reference to have an externally program­mable undervoltage shutdown. The RUN/SS pin is inter­nally held low until the voltage applied to the UVADJ pin exceeds the 1.2V threshold.
Short-Circuit Detection
The RUN/SS capacitor is used initially to turn on and limit the inrush current from the input power source. Once the controllers have been given time, as determined by the capacitor on the RUN/SS pin, to charge up the output capacitors and provide full load current, the RUN/SS capacitor is then used as a short-circuit timeout circuit. If the output voltage falls to less than 70% of its nominal output voltage, the RUN/SS capacitor begins discharg­ing, assuming that the output is in a severe overcurrent and/or short-circuit condition. If the condition lasts for a long enough period, as determined by the size of the RUN/SS capacitor, the controller will be shut down until
will result in 60
CC
3731fb
11
Page 12
LTC3731
OPERATIO
U
(Refer to Functional Diagram)
the RUN/SS pin voltage is recycled. This built-in latchoff can be overridden by providing >5µA at a compliance of
3.8V to the RUN/SS pin. This additional current shortens the soft-start period but prevents net discharge of the RUN/SS capacitor during a severe overcurrent and/or short-circuit condition. Foldback current limiting is acti­vated when the output voltage falls below 70% of its nominal level whether or not the short-circuit latchoff circuit is enabled. Foldback current limit can be overrid­den by clamping the EAIN pin such that the voltage is held above the (70%)(0.6V) or 0.42V level even when the actual output voltage is low. Up to 100µA of input current can safely be accommodated by the RUN/SS pin.
WUUU
APPLICATIO S I FOR ATIO
The basic application circuit is shown in Figure 1 on the first page of this data sheet. External component selection is driven by the load requirement, and normally begins with the selection of an inductance value based upon the desired operating frequency, inductor current and output voltage ripple requirements. Once the inductors and operating frequency have been chosen, the current sens­ing resistors can be calculated. Next, the power MOSFETs and Schottky diodes are selected. Finally, C are selected according to the voltage ripple require­ments. The circuit shown in Figure 1 can be configured for operation up to a MOSFET supply voltage of 28V (limi­ted by the external MOSFETs and possibly the minimum on-time).
and C
IN
OUT
Input Undervoltage Reset
The RUN/SS capacitor will be reset if the input voltage (V
) is allowed to fall below approximately 4V. The
CC
capacitor on the RUN/SS pin will be discharged until the short-circuit arming latch is disarmed. The RUN/SS ca­pacitor will attempt to cycle through a normal soft-start ramp up after the V
supply rises above 4V. This circuit
CC
prevents power supply latchoff in the event of input power switching break-before-make situations. The PGOOD pin is held low during start-up until the RUN/SS capacitor rises above the short-circuit latchoff arming threshold of approximately 3.8V.
700
600
500
400
300
OPERATING FREQUENCY (kHz)
200
0
0.5 1 1.5 2 2.5 PLLFLTR PIN VOLTAGE (V)
3731 F03
Figure 3. Operating Frequency vs V
PLLFLTR
Operating Frequency
The IC uses a constant frequency, phase-lockable archi­tecture with the frequency determined by an internal capacitor. This capacitor is charged by a fixed current plus an additional current which is proportional to the voltage applied to the PLLFLTR pin. Refer to the Phase-Locked Loop and Frequency Synchronization section for addi­tional information.
A graph for the voltage applied to the PLLFLTR pin versus frequency is given in Figure 3. As the operating frequency is increased the gate charge losses will be higher, reducing
12
efficiency (see Efficiency Considerations). The maximum switching frequency is approximately 680kHz.
Inductor Value Calculation and Output Ripple Current
The operating frequency and inductor selection are inter­related in that higher operating frequencies allow the use of smaller inductor and capacitor values. So why would anyone ever choose to operate at lower frequencies with larger components? The answer is efficiency. A higher frequency generally results in lower efficiency because of MOSFET gate charge and transition losses. In addition to this basic tradeoff, the effect of inductor value on ripple
3731fb
Page 13
WUUU
APPLICATIO S I FOR ATIO
current and low current operation must also be consid­ered. The PolyPhase approach reduces both input and output ripple currents while optimizing individual output stages to run at a lower fundamental frequency, enhancing efficiency.
The inductor value has a direct effect on ripple current. The inductor ripple current ∆IL per individual section, N, decreases with higher inductance or frequency and in­creases with higher V
V
OUT OUT
I
=
L
fL
1
⎜ ⎝
or V
IN
V
⎟ ⎠
V
IN
OUT
:
1.0
0.9
0.8
0.7
0.6
/fL
0.5
O
O(P-P)
V
I
0.4
0.3
0.2
0.1
0
0.1 0.2 0.3 0.4 DUTY FACTOR (V
0.5 0.6 0.7 0.8 0.9
OUT/VIN
LTC3731
1-PHASE 2-PHASE 3-PHASE 4-PHASE 6-PHASE 12-PHASE
)
3731 F04
where f is the individual output stage operating frequency.
In a PolyPhase converter, the net ripple current seen by the output capacitor is much smaller than the individual inductor ripple currents due to the ripple cancellation. The details on how to calculate the net output ripple current can be found in Application Note 77.
Figure 4 shows the net ripple current seen by the output capacitors for the different phase configurations. The output ripple current is plotted for a fixed output voltage as the duty factor is varied between 10% and 90% on the x-axis. The output ripple current is normalized against the inductor ripple current at zero duty factor. The graph can be used in place of tedious calculations. As shown in Figure 4, the zero output ripple current is obtained when:
V
OUT
V
k
where k N
==12 1, ,...,
N
IN
So the number of phases used can be selected to minimize the output ripple current and therefore the output ripple voltage at the given input and output voltages. In applica­tions having a highly varying input voltage, additional phases will produce the best results.
Accepting larger values of ∆I
allows the use of low
L
inductances but can result in higher output voltage ripple. A reasonable starting point for setting ripple current is I
= 0.4(I
L
is the total load current. Remember, the maximum
I
OUT
occurs at the maximum input voltage. The individual
I
L
)/N, where N is the number of channels and
OUT
inductor ripple currents are constant, determined by the input and output voltages and the inductance.
Figure 4. Normalized Peak Output Current vs Duty Factor [I
RMS
= 0.3(I
O(P-P)
]
Inductor Core Selection
Once the value for L1 to L3 is determined, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores, forcing the use of ferrite, molyper­malloy or Kool Mµ
®
cores. Actual core loss is independent of core size for a fixed inductor value, but it is very dependent on inductance selected. As inductance in­creases, core losses go down. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase.
Ferrite designs have very low core loss and are preferred at high switching frequencies, so design goals can concentrate on copper loss and preventing saturation. Ferrite core material saturates “hard,” which means that inductance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate!
Molypermalloy (from Magnetics, Inc.) is a very good, low loss core material for toroids, but it is more expensive than ferrite. A reasonable compromise from the same manu­facturer is Kool Mµ. Toroids are very space efficient, especially when you can use several layers of wire. Be­cause they lack a bobbin, mounting is more difficult. However, designs for surface mount are available which do not increase the height significantly.
3731fb
13
Page 14
LTC3731
Main Switch Duty Cycle
V
V
Synchronous Switch Duty Cycle
VV
V
OUT
IN
IN OUT
IN
=
=
⎛ ⎝
⎞ ⎠
WUUU
APPLICATIO S I FOR ATIO
Power MOSFET and D1, D2, D3 Selection
At least two external power MOSFETs must be selected for each of the three output sections: One N-channel MOSFET for the top (main) switch and one or more N-channel MOSFET(s) for the bottom (synchronous) switch. The number, type and “on” resistance of all MOSFETs selected take into account the voltage step-down ratio as well as the actual position (main or synchronous) in which the MOSFET will be used. A much smaller and much lower input capacitance MOSFET should be used for the top MOSFET in applications that have an output voltage that is less than 1/3 of the input voltage. In applications where V
IN
>> V
OUT
, the top MOSFETs’ “on” resistance is normally less impor­tant for overall efficiency than its input capacitance at operating frequencies above 300kHz. MOSFET manufac­turers have designed special purpose devices that provide reasonably low “on” resistance with significantly reduced input capacitance for the main switch application in switch­ing regulators.
The peak-to-peak MOSFET gate drive levels are set by the voltage, V
, requiring the use of logic-level threshold
CC
MOSFETs in most applications. Pay close attention to the
specification for the MOSFETs as well; many of the
BV
DSS
logic-level MOSFETs are limited to 30V or less.
stage and then plotting the gate voltage versus time. The initial slope is the effect of the gate-to-source and the gate­to-drain capacitance. The flat portion of the curve is the result of the Miller multiplication effect of the drain-to-gate capacitance as the drain drops the voltage across the current source load. The upper sloping line is due to the drain-to-gate accumulation capacitance and the gate-to­source capacitance. The Miller charge (the increase in coulombs on the horizontal axis from a to b while the curve is flat) is specified for a given VDS drain voltage, but can be adjusted for different V ratio of the application V values. A way to estimate the C
voltages by multiplying by the
DS
to the curve specified V
DS
term is to take the
MILLER
DS
change in gate charge from points a and b on a manufac­turers data sheet and divide by the stated V specified. C
is the most important selection criteria
MILLER
voltage
DS
for determining the transition loss term in the top MOSFET but is not directly specified on MOSFET data sheets. C
RSS
and COS are specified sometimes but definitions of these parameters are not included.
When the controller is operating in continuous mode the duty cycles for the top and bottom MOSFETs are given by:
Selection criteria for the power MOSFETs include the “on” resistance R
, input capacitance, input voltage and
DS(ON)
maximum output current.
MOSFET input capacitance is a combination of several components but can be taken from the typical “gate charge” curve included on most data sheets (Figure 5). The curve is generated by forcing a constant input current into the gate of a common source, current source loaded
V
GS
14
MILLER EFFECT
ab
Q
C
MILLER
IN
= (QB – QA)/V
Figure 5. Gate Charge Characteristic
DS
The power dissipation for the main and synchronous MOSFETs at maximum output current are given by:
V
P
MAIN
V
IN
V
OUTINMAX
=
V
V
IN
2
⎜ ⎝
I
MAX
2
+
V
+
V
GS
3731 F05
DS
P
SYNC
VV V
CC TH IL TH IL
VVVI
IN OUTINMAX
=
2
I
⎞ ⎟
N
RC
()( )
DR MILLER
N
11
() ()
⎛ ⎜
N
R
1
+
()
DS ON
()
+
f
()
⎥ ⎦
2
()
⎟ ⎠
1δδ
+
R
DS ON
+
()
3731fb
Page 15
WUUU
APPLICATIO S I FOR ATIO
LTC3731
where N is the number of output stages, δ is the tempera­ture dependency of R resistance (approximately 2 at V drain potential
and
the change in drain potential in the
particular application. V
, RDR is the effective top driver
DS(ON)
= V
GS
MILLER
is the data sheet specified
TH(IL)
), VIN is the
typical gate threshold voltage specified in the power MOSFET data sheet at the specified drain current. C
MILLER
is the calculated capacitance using the gate charge curve from the MOSFET data sheet and the technique described above.
Both MOSFETs have I2R losses while the topside N-channel equation includes an additional term for transition losses, which peak at the highest input voltage. For V
< 12V, the
IN
high current efficiency generally improves with larger MOSFETs, while for V
> 12V, the transition losses
IN
rapidly increase to the point that the use of a higher R
DS(ON)
device with lower C
actually provides higher
MILLER
efficiency. The synchronous MOSFET losses are greatest at high input voltage when the top switch duty factor is low or during a short-circuit when the synchronous switch is on close to 100% of the period.
The term (1 + δ ) is generally given for a MOSFET in the form of a normalized R
vs temperature curve, but
DS(ON)
δ = 0.005/°C can be used as an approximation for low voltage MOSFETs.
The Schottky diodes (D1 to D3 in Figure 1) conduct during the dead time between the conduction of the two large power MOSFETs. This prevents the body diode of the bottom MOSFET from turning on, storing charge during the dead time and requiring a reverse recovery period which could cost as much as several percent in efficiency. A 2A to 8A Schottky is generally a good compromise for both regions of operation due to the relatively small average current. Larger diodes result in additional transi­tion loss due to their larger junction capacitance.
C
and C
IN
Selection
OUT
In continuous mode, the source current of each top N-channel MOSFET is a square wave of duty cycle V
OUT/VIN
. A low ESR input capacitor sized for the maximum RMS current must be used. The details of a close form equation
can be found in Application Note 77. Figure 6 shows the input capacitor ripple current for different phase configu­rations with the output voltage fixed and input voltage varied. The input ripple current is normalized against the DC output current. The graph can be used in place of tedious calculations. The minimum input ripple current can be achieved when the product of phase number and output voltage, N(V input voltage V
V
OUT
==12 1, ,...,
V
IN
or:
IN
k
where k N
N
), is approximately equal to the
OUT
So the phase number can be chosen to minimize the input capacitor size for the given input and output voltages.
In the graph of Figure 4, the local maximum input RMS capacitor currents are reached when:
V
OUT
V
IN
k
21
==
where k N
12–, ,...,
N
These worst-case conditions are commonly used for de­sign because even significant deviations do not offer much relief. Note that capacitor manufacturer’s ripple current ratings are often based on only 2000 hours of life. This makes it advisable to further derate the capacitor or to choose a capacitor rated at a higher temperature than re­quired. Several capacitors may also be paralleled to meet
0.6
0.5
0.4
0.3
0.2
DC LOAD CURRENT
RMS INPUT RIPPLE CURRENT
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure 6. Normalized Input RMS Ripple Current vs Duty Factor for One to Six Output Stages
DUTY FACTOR (V
1-PHASE 2-PHASE 3-PHASE 4-PHASE 6-PHASE 12-PHASE
OUT/VIN
0.9
)
3731 F06
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15
Page 16
LTC3731
WUUU
APPLICATIO S I FOR ATIO
size or height requirements in the design. Always consult the capacitor manufacturer if there is any question.
The Figure 6 graph shows that the peak RMS input current is reduced linearly, inversely proportional to the number N of stages used. It is important to note that the efficiency loss is proportional to the input RMS current squared and therefore a 3-stage implementation results in 90% less power loss when compared to a single phase design. Battery/input protection fuse resistance (if used), PC board trace and connector resistance losses are also reduced by the reduction of the input ripple current in a PolyPhase system. The required amount of input capaci­tance is further reduced by the factor, N, due to the effective increase in the frequency of the current pulses.
Ceramic capacitors are becoming very popular for small designs but several cautions should be observed. “X7R”, “X5R” and “Y5V” are examples of a few of the ceramic materials used as the dielectric layer, and these different dielectrics have very different effect on the capacitance value due to the voltage and temperature conditions applied. Physically, if the capacitance value changes due to applied voltage change, there is a concommitant piezo effect which results in radiating sound! A load that draws varying current at an audible rate may cause an attendant varying input voltage on a ceramic capacitor, resulting in an audible signal. A secondary issue relates to the energy flowing back into a ceramic capacitor whose capacitance value is being reduced by the increasing charge. The voltage can increase at a considerably higher rate than the constant current being supplied because the capacitance value is decreasing as the voltage is increasing! Nevertheless, ceramic capacitors, when properly selected and used, can provide the lowest overall loss due to their extremely low ESR.
The selection of C
is driven by the required effective
OUT
series resistance (ESR). Typically once the ESR require­ment is satisfied the capacitance is adequate for filtering. The steady-state output ripple (∆V
∆∆V I ESR
+
OUT RIPPLE
⎛ ⎜
8
) is determined by:
OUT
1
OUT
NfC
where f = operating frequency of each stage, N is the number of output stages, C
= ripple current in each inductor. The output ripple is
I
L
highest at maximum input voltage since ∆I
= output capacitance and
OUT
increases
L
with input voltage. The output ripple will be less than 50mV at max V
C
OUT
with ∆IL = 0.4I
IN
required ESR < N • R
OUT(MAX)
assuming:
SENSE
and
C
OUT
> 1/(8Nf)(R
SENSE
)
The emergence of very low ESR capacitors in small, surface mount packages makes very small physical imple­mentations possible. The ability to externally compensate the switching regulator loop using the I
pin allows a
TH
much wider selection of output capacitor types. The impedance characteristics of each capacitor type is sig­nificantly different than an ideal capacitor and therefore requires accurate modeling or bench evaluation during design.
Manufacturers such as Nichicon, Nippon Chemi-Con and Sanyo should be considered for high performance through­hole capacitors. The OS-CON semiconductor dielectric capacitor available from Sanyo and the Panasonic SP surface mount types have a good (ESR)(size) product. Once the ESR requirement for C RMS current rating generally far exceeds the I
has been met, the
OUT
RIPPLE(P-P)
requirement. Ceramic capacitors from AVX, Taiyo Yuden, Murata and Tokin offer high capacitance value and very low ESR, especially applicable for low output voltage applications.
In surface mount applications, multiple capacitors may have to be paralleled to meet the ESR or RMS current handling requirements of the application. Aluminum electrolytic and dry tantalum capacitors are both avail­able in surface mount configurations. New special polymer surface mount capacitors offer very low ESR also but have much lower capacitive density per unit volume. In the case of tantalum, it is critical that the capacitors are surge tested for use in switching power supplies. Several excellent choices are the AVX TPS, AVX TPSV, the KEMET T510 series of sur
face-mount
tantalums or the Panasonic SP series of surface mount
16
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APPLICATIO S I FOR ATIO
LTC3731
special polymer capacitors available in case heights ranging from 2mm to 4mm. Other capacitor types in­clude Sanyo POSCAP, Sanyo OS-CON, Nichicon PL series and Sprague 595D series. Consult the manufac­turers for other specific recommendations.
R
Selection for Output Current
SENSE
Once the frequency and inductor have been chosen, R
SENSE1, RSENSE2, RSENSE3
are determined based on the required peak inductor current. The current comparator has a typical maximum threshold of 75mV/R input common mode range of SGND to (1.1) • V
SENSE
and an
. The
CC
current comparator threshold sets the peak inductor cur­rent, yielding a maximum average output current I
MAX
equal to the peak value less half the peak-to-peak ripple current, I
.
L
Allowing a margin for variations in the IC and external component values yields:
mV
RN
SENSE
The IC works well with values of R
50
=
I
MAX
from 0.002
SENSE
to 0.02Ω.
Decoupling
V
CC
The VCC pin supplies power not only to the internal circuits of the controller but also to the top and bottom gate drivers in the LTC3731 UH package, and therefore must be bypassed very carefully to ground with a ceramic capacitor, type X7R or X5R (depending upon the operat­ing temperature environment) of
next to the IC
and preferably an additional 10µF placed very
at least 1µF imme
diately
close to the IC due to the extremely high instantaneous currents involved. The total capacitance, taking into ac­count the voltage coefficient of ceramic capacitors, should be 100 times as large as the total combined gate charge capacitance of ALL of the MOSFETs being driven. Good bypassing close to the IC is necessary to supply the high transient currents required by the MOSFET gate drivers while keeping the 5V supply quiet enough so as not to disturb the very small-signal high bandwidth of the cur­rent comparators.
Topside MOSFET Driver Supply (C
External bootstrap capacitors, C
, DB)
B
, connected to the
B
BOOST pins, supply the gate drive voltages for the topside MOSFETs. Capacitor C gram is charged though diode D
in the Functional Dia-
B
from VCC when the
B
SW pin is low. When one of the topside MOSFETs turns on, the driver places the C
voltage across the gate-
B
source of the desired MOSFET. This enhances the MOSFET and turns on the topside switch. The switch node voltage, SW, rises to V
and the BOOST pin
IN
follows. With the topside MOSFET on, the boost voltage is above the input supply (V value of the boost capacitor C
= VCC + VIN). The
BOOST
needs to be 30 to 100
B
times that of the total gate charge capacitance of the topside MOSFET(s) as specified on the manufacturer’s data sheet. The reverse breakdown of D greater than V
IN(MAX).
must be
B
Differential Amplifier/Output Voltage Programming
The IC has a true remote voltage sense capability. The sensing connections should be returned from the load, back to the differential amplifier’s inputs through a com­mon, tightly coupled pair of PC traces. The differential amplifier rejects common mode signals capacitively or inductively radiated into the feedback PC traces as well as ground loop disturbances. The differential amplifier out­put signal is divided down with an external resistive divider and compared with the internal, precision 0.6V voltage reference by the error amplifier.
The differential amplifier has a 0V to V input range and an output swing range of 0V to V
common mode
CC
– 1.2V.
CC
The output uses an NPN emitter follower without any internal pull-down current. A DC resistive load to ground is required in order to sink current.
The output voltage is set by an external resistive divider according to the following formula:
R
1
VV
=+
OUT
06 1
.
⎜ ⎝
⎞ ⎟
R
2
The resistive divider is connected to the output as shown in Figure 2, allowing remote voltage sensing.
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LTC3731
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Soft-Start/Run Function
The RUN/SS pin provides three functions: 1) ON/OFF, 2) soft-start and 3) a defeatable short-circuit latch off timer. Soft-start reduces the input power sources’ surge currents by gradually increasing the controller’s current limit (pro­portional to an internal buffered and clamped V
ITH
). The latchoff timer prevents very short, extreme load transients from tripping the overcurrent latch. A small pull-up cur­rent (>5µA) supplied to the RUN/SS pin will prevent the overcurrent latch from operating. A maximum pull-up current of 200µA is allowed into the RUN/SS pin even though the voltage at the pin may exceed the absolute maximum rating for the pin. This is a result of the limited current and the internal protection circuit on the pin. The following explanation describes how this function operates.
An internal 1.5µA current source charges up the C
SS
capacitor. When the voltage on RUN/SS reaches 1.5V, the controller is permitted to start operating. As the voltage on RUN/SS increases from 1.5V to 3.5V, the internal current limit is increased from 20mV/R
SENSE
to 75mV/R
SENSE
. The output current limit ramps up slowly, taking an additional 1s/µF to reach full current. The output current thus ramps up slowly, eliminating the starting surge current required from the input power supply. If RUN/SS has been pulled all the way to ground, there is a delay before starting of approximately:
.
15
t
DELAY SS SS
t
IRAMP SS SS
V
=
.
15
A
µ
315
VV
=
.
15
µ
CsFC
. A
/
1
()
/
CsFC
1
()
By pulling the RUN/SS controller pin below 0.4V the IC is put into low current shutdown (I
< 100 µA). The RUN/SS
Q
pin can be driven directly from logic as shown in Figure 7. Diode, D1, in Figure 7 reduces the start delay but allows CSS to ramp up slowly, providing the soft-start function.
V
RUN/SS PIN
RUN/SS PIN3.3V OR 5V
SHDNSHDN
C
SS
Figure 7. RUN/SS Pin Interfacing
5V
CC
R
SS
D1
C
SS
3731 F07
The RUN/SS pin has an internal 6V zener clamp (see the Functional Diagram).
Fault Conditions: Overcurrent Latchoff
The RUN/SS pins also provide the ability to latch off the controllers when an overcurrent condition is detected. The RUN/SS capacitor is used initially to turn on and limit the inrush current of all three output stages. After the control­lers have been started and been given adequate time to charge up the output capacitor and provide full load current, the RUN/SS capacitor is used for a short-circuit timer. If the output voltage falls to less than 70% of its nominal value, the RUN/SS capacitor begins discharging on the assumption that the output is in an overcurrent condition. If the condition lasts for a long enough period, as determined by the size of the RUN/SS capacitor, the discharge current, and the circuit trip point, the controller will be shut down until the RUN/SS pin voltage is recycled. If the overload occurs during start-up, the time can be approximated by:
t
>> (CSS • 0.6V)/(1.5µA) = 4 • 105 (CSS)
LO1
If the overload occurs after start-up, the voltage on the RUN/SS capacitor will continue charging and will provide additional time before latching off:
>> (CSS • 3V)/(1.5µA) = 2 • 106 (CSS)
t
LO2
This built-in overcurrent latchoff can be overridden by providing a pull-up resistor to the RUN/SS pin from V
CC
as shown in Figure 7. When VCC is 5V, a 200k resistance will prevent the discharge of the RUN/SS capacitor during an overcurrent condition but also shortens the soft-start period, so a larger RUN/SS capacitor value may be required.
Why should you defeat overcurrent latchoff? During the prototyping stage of a design, there may be a problem with noise pick-up or poor layout causing the protection circuit to latch off the controller. Defeating this feature allows troubleshooting of the circuit and PC layout. The internal foldback current limiting still remains active, thereby protecting the power supply system from failure. A deci­sion can be made after the design is complete whether to rely solely on foldback current limiting or to enable the latchoff feature by removing the pull-up resistor.
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The value of the soft-start capacitor CSS may need to be scaled with output current, output capacitance and load current characteristics. The minimum soft-start capaci­tance is given by:
> (C
C
SS
OUT
)(V
) (10–4) (R
OUT
SENSE
)
The minimum recommended soft-start capacitor of C
= 0.1µF will be sufficient for most applications.
SS
Current Foldback
In certain applications, it may be desirable to defeat the internal current foldback function. A negative impedance is experienced when powering a switching regulator. That
is, the input current is higher at a lower VIN and
decreases as V
is increased. Current foldback is de-
IN
signed to accommodate a normal, resistive load having increasing current draw with increasing voltage. The EAIN pin should be artificially held 70% above its nominal operating level of 0.6V, or 0.42V in order to prevent the IC from “folding back” the peak current level. A suggested circuit is shown in Figure 8.
The emitter of Q1 will hold up the EAIN pin to a voltage in the absence of V
that will prevent the internal sensing
OUT
circuitry from reducing the peak output current. Remov­ing the function in this manner eliminates the external MOSFET’s protective feature under short-circuit condi­tions. This technique will also prevent the short-circuit latchoff function from turning off the part during a short­circuit event and the peak output current will only be limited to N • 75mV/R
SENSE
V
CC
.
V
CC
Undervoltage Reset
In the event that the input power source to the IC (V
CC
) drops below 4V, the RUN/SS capacitor will be discharged to ground. When V
rises above 4V, the RUN/SS capaci-
CC
tor will be allowed to recharge and initiate another soft­start turn-on attempt. This may be useful in applications that switch between two supplies that are not diode connected, but note that this cannot make up for the resultant interruption of the regulated output.
Phase-Locked Loop and Frequency Synchronization
The IC has a phase-locked loop comprised of an internal voltage controlled oscillator and phase detector. This allows the top MOSFET of output stage 1’s turn-on to be locked to the rising edge of an external source. The frequency range of the voltage controlled oscillator is ±50% around the center frequency f
. A voltage applied to
O
the PLLFLTR pin of 1.2V corresponds to a frequency of approximately 400kHz. The nominal operating frequency range of the IC is 225kHz to 680kHz.
The phase detector used is an edge sensitive digital type that provides zero degrees phase shift between the external and internal oscillators. This type of phase detector will not lock the internal oscillator to harmonics of the input frequency. The PLL hold-in range, ∆f equal to the capture range, ∆f
fH = fC = ±0.5 f
O
:
C
H
, is
The output of the phase detector is a complementary pair of current sources charging or discharging the external filter components on the PLLFLTR pin. A simplified block diagram is shown in Figure 9.
Q1
CALCULATE FOR
0.42V TO 0.55V
Figure 8. Foldback Current Elimination
LTC3731
EAIN
3731 F08
If the external frequency (f lator frequency, f
, current is sourced continuously,
OSC
) is greater than the oscil-
PLLIN
pulling up the PLLFLTR pin. When the external frequency is less than f
, current is sunk continuously, pulling
OSC
down the PLLFLTR pin. If the external and internal fre­quencies are the same, but exhibit a phase difference, the current sources turn on for an amount of time correspond­ing to the phase difference. Thus, the voltage on the
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LTC3731
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R
3731 F09
LP
10k
PLLFLTR
C
LP
PHASE DETECTOR/
EXTERNAL
PLLIN
OSCILLATOR
OSC
50k
Figure 9. Phase-Locked Loop Block Diagram
OSC
DIGITAL
PHASE/
FREQUENCY
DETECTOR
2.4V
PLLFLTR pin is adjusted until the phase and frequency of the external and internal oscillators are identical. At this stable operating point, the phase comparator output is open and the filter capacitor CLP holds the voltage. The IC PLLIN pin must be driven from a low impedance source such as a logic gate located close to the pin. When using multiple ICs for a phase-locked system, the PLLFLTR pin of the master oscillator should be biased at a voltage that will guarantee the slave oscillator(s) ability to lock onto the master’s frequency. A voltage of 1.7V or below applied to the master oscillator’s PLLFLTR pin is recommended in order to meet this requirement. The resultant operating frequency will be approximately 550kHz for 1.7V.
The loop filter components (C
, RLP) smooth out the
LP
current pulses from the phase detector and provide a stable input to the voltage controlled oscillator. The filter components CLP and RLP determine how fast the loop acquires lock. Typically R
=10k and CLP ranges from
LP
0.01µF to 0.1µF.
If the duty cycle falls below what can be accommodated by the minimum on-time, the IC will begin to skip every other cycle, resulting in half-frequency operation. The output voltage will continue to be regulated, but the ripple current and ripple voltage will increase.
The minimum on-time for the IC is generally about 110ns. However, as the peak sense voltage decreases the mini­mum on-time gradually increases. This is of particular concern in forced continuous applications with low ripple current at light loads. If the duty cycle drops below the minimum on-time limit in this situation, a significant amount of cycle skipping can occur with correspondingly larger current and voltage ripple.
If an application can operate close to the minimum on­time limit, an inductor must be chosen that is low enough in value to provide sufficient ripple amplitude to meet the minimum on-time requirement.
inductor ripple current for each channel equal to or
the greater than 30% of I
OUT(MAX)
As a general rule, keep
at V
IN(MAX)
.
Efficiency Considerations
The percent efficiency of a switching regulator is equal to the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Percent efficiency can be expressed as:
%Efficiency = 100% – (L1 + L2 + L3 + ...)
where L1, L2, etc. are the individual losses as a percentage of input power.
Minimum On-Time Considerations
Minimum on-time, t
ON(MIN)
, is the smallest time duration that the IC is capable of turning on the top MOSFET. It is determined by internal timing delays and the gate charge of the top MOSFET. Low duty cycle applications may approach this minimum on-time limit and care should be taken to ensure that:
V
t
ON MIN
()
<
Vf
IN
OUT
()
20
Checking Transient Response
The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in DC (resistive) load current. When a load step occurs, V amount equal to ∆I series resistance of C discharge C
, generating the feedback error signal that
OUT
• ESR, where ESR is the effective
LOAD
OUT
. ∆I
also begins to charge or
LOAD
shifts by an
OUT
forces the regulator to adapt to the current change and return V
to its steady-state value. During this recovery
OUT
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LTC3731
time, V ringing, which would indicate a stability problem. The
availability of the I control loop behavior, but also provides a DC coupled and AC filtered closed-loop response test point. The DC step, rise time and settling at this test point truly reflects the closed-loop response. Assuming a predominantly
second order system, phase margin and/or damping factor can be estimated using the percentage of overshoot seen at this pin. The bandwidth can also be estimated by examining the rise time at the pin. The I ponents shown in the Figure 1 circuit will provide an adequate starting point for most applications.
The I loop compensation. The values can be modified slightly (from 0.2 to 5 times their suggested values) to maximize transient response once the final PC layout is done and the particular output capacitor type and value have been determined. The output capacitors need to be decided upon because the various types and values determine the loop feedback factor gain and phase. An output current pulse of 20% to 80% of full load current having a rise time of <2µs will produce output voltage and ITH pin waveforms that will give a sense of the overall loop stability without breaking the feedback loop. The initial output voltage step, resulting from the step change in output current, may not be within the bandwidth of the feedback loop, so this signal cannot be used to determine phase margin. This is why it is better to look at the ITH pin signal which is in the feedback loop and is the filtered and compensated control loop response. The gain of the loop will be increased by increasing RC and the bandwidth of the loop will be increased by decreasing CC. If RC is increased by the same factor that C the same, thereby keeping the phase the same in the most critical frequency range of the feedback loop. The output voltage settling behavior is related to the stability of the closed-loop system and will demonstrate the actual over­all supply performance.
can be monitored for excessive overshoot or
OUT
pin not only allows optimization of
TH
external com-
TH
series RC-CC filter sets the dominant pole-zero
TH
is decreased, the zero frequency will be kept
C
A second, more severe transient is caused by switching in loads with large (>1µF) supply bypass capacitors. The discharged bypass capacitors are effectively put in parallel with C alter its delivery of current quickly enough to prevent this sudden step change in output voltage if the load switch resistance is low and it is driven quickly. If C than 2% of C so that the load rise time is limited to approximately 1000 • R R
SENSE
the charging current to about 1A.
Automotive Considerations: Plugging into the Cigarette Lighter
As battery-powered devices go mobile, there is a natural interest in plugging into the cigarette lighter in order to conserve or even recharge battery packs during opera­tion. But before you connect, be advised: you are plugging into the supply from hell. The main battery line in an automobile is the source of a number of nasty potential transients, including load dump, reverse battery and double battery.
Load dump is the result of a loose battery cable. When the cable breaks connection, the field collapse in the alternator can cause a positive spike as high as 60V which takes several hundred milliseconds to decay. Reverse battery is just what it says, while double battery is a consequence of tow-truck operators finding that a 24V jump start cranks cold engines faster than 12V.
The network shown in Figure 10 is the most straightfor­ward approach to protect a DC/DC converter from the ravages of an automotive battery line. The series diode prevents current from flowing during reverse battery, while the transient suppressor clamps the input voltage during load dump. Note that the transient suppressor should not conduct during double-battery operation, but must still clamp the input voltage below breakdown of the
, causing a rapid drop in V
OUT
, the switch rise time should be controlled
OUT
• C
SENSE
resistor would require a 500µs rise time, limiting
. Thus a 250µF capacitor and a 2m
LOAD
. No regulator can
OUT
is greater
LOAD
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LTC3731
µ
P
VV
V
AW
SYNC
=
()( )
()
=
20 1 3
20
15 1 25 0 007 1 84
2
.
.. .
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APPLICATIO S I FOR ATIO
V
CC
5V
+
V 12V
BAT
Use a commonly available 0.003 sense resistor.
Next verify the minimum on-time is not violated. The minimum on-time occurs at maximum V
CC
:
LTC3731
3731 F10
Figure 10. Automotive Application Protection
converter. Although the IC has a maximum input voltage of 32V on the SW pins, most applications will be limited to 30V by the MOSFET BV
DSS
.
Design Example
As a design example, assume V V
= 20V(max), V
IN
OUT
= 1.3V, I
= 5V, V
CC
MAX
= 12V(nominal),
IN
= 45A and f = 400kHz. The inductance value is chosen first based upon a 30% ripple current assumption. The highest value of ripple current in each output stage occurs at the maximum input voltage.
=
fI
()
=
400 30 15
()()()
1
⎜ ⎝
13
kHz A
V
OUT OUT
L
V
⎟ ⎠
V
IN
V
.
%
1
⎜ ⎝
.
13
20
V
⎞ ⎟
V
.13
20 400
()
=
162
ns
t
ON MIN
=
()
VfVV kHz
IN MAX
V
OUT
()
()
=
The output voltage will be set by the resistive divider from the DIFFOUT pin to SGND, R1 and R2 in the Functional Diagram. Set R1 = 13.3k and R2 = 11.3k.
The power dissipation on the topside MOSFET can be estimated. Using a Fairchild FDS6688 for example, R = 7m, C
MILLER
= 15nC/15V = 1000pF. At maximum input
DS(ON)
voltage with T(estimated) = 50°C:
P
MAIN
2
15 1 0 005 50 25
()+()
20
V
.
0 007 20
⎛ ⎜
518118
+
()
1
VV V
–. .
.
[]
45
2
23
()()
+
()
⎟ ⎠
CC
° °
()
A
2 1000
()( )
⎟ ⎠
400 2 2
kHz W
pF
.
=
.
18
V
The worst-case power dissipation by the synchronous MOSFET under normal operating conditions at elevated ambient temperature and estimated 50°C junction tem­perature rise is:
H
068
.
Using L = 0.6µH, a commonly available value results in 34% ripple current. The worst-case output ripple for the three stages operating in parallel will be less than 11% of the peak output current.
R
SENSE1, RSENSE2
and R
SENSE3
can be calculated by using a conservative maximum sense current threshold of 65mV and taking into account half of the ripple current:
mV
R
SENSE
22
=
65
34
A
15 1
+
⎜ ⎝
=
0 0037
%
2
.
⎞ ⎟
A short-circuit to ground will result in a folded back current of:
25
I
SC
mV
23
+
()
m
+
with a typical value of R
150 20
1 2
DS(ON)
ns V
0675.
and d = (0.005/°C)(50°C) =
()
µ
=
.
H
A
0.25. The resulting power dissipated in the bottom MOSFET is:
P
= (7.5A)2(1.25)(0.007) 0.5W
SYNC
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which is less than one third of the normal, full load conditions. Incidentally, since the load no longer dissi­pates any power, total system power is decreased by over 90%. Therefore, the system actually cools significantly during a shorted condition!
SW1
D1
PC Board Layout Checklist
When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the IC. These items are also illustrated graphically in the layout diagram of Figure 11. Check the following in the PC layout:
L1
R
SENSE1
V
IN
R
IN
+
C
IN
BOLD LINES INDICATE HIGH, SWITCHING CURRENTS. KEEP LINES TO A MINIMUM LENGTH.
SW2
SW3
L2
R
SENSE2
D2
L3
R
SENSE3
D3
C
OUT
3731 F11
V
OUT
+
R
L
Figure 11. Branch Current Waveforms
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1) Are the signal and power ground paths isolated? Keep the
SGND at one end of a printed circuit path thus preventing MOSFET currents from traveling under the IC. The IC signal ground pin should be used to hook up all control circuitry on one side of the IC, routing the copper through SGND, under the IC covering the “shadow” of the pack­age, connecting to the PGND pin and then continuing on to the (–) plates of C
IN
and C
. The VCC decoupling
OUT
capacitor should be placed immediately adjacent to the IC between the V
pin and PGND. A 1µF ceramic capaci-
CC
tor of the X7R or X5R type is small enough to fit very close to the IC to minimize the ill effects of the large current pulses drawn to drive the bottom MOSFETs. An addi­tional 5µF to 10µF of ceramic, tantalum or other very low ESR capacitance is recommended in order to keep the internal IC supply quiet. The power ground returns to the sources of the bottom N-channel MOSFETs, anodes of the Schottky diodes and (–) plates of C
, which should
IN
have as short lead lengths as possible.
2) Does the IC IN+ pin connect to the (+) plates of C
OUT
?
A 30pF to 300pF feedforward capacitor between the
+
IN
and EAIN pins should be placed as close as
possible to the IC.
3) Are the SENSE– and SENSE+ printed circuit traces for
each channel routed together with minimum PC trace spacing? The filter capacitors between SENSE
SENSE to the pins of the IC. Connect the SENSE
for each channel should be as close as possible
and SENSE
+
and
+
pins to the pads of the sense resistor as illustrated in Figure 12.
INDUCTOR
LTC3731
+
SENSE
SENSE
Figure 12. Kelvin Sensing R
1000pF
OUTPUT CAPACITOR
SENSE RESISTOR
3731 F12b
SENSE
4) Do the (+) plates of C
connect to the drains of the
PWR
topside MOSFETs as closely as possible? This capaci­tor provides the pulsed current to the MOSFETs.
5) Keep the switching nodes, SWITCH, BOOST and TG away from sensitive small-signal nodes (SENSE
SENSE
, IN+, IN–, EAIN). Ideally the SWITCH, BOOST
+
,
and TG printed circuit traces should be routed away and separated from the IC and especially the “quiet” side of the IC. Separate the high dv/dt traces from sensitive small-signal nodes with ground traces or ground planes.
6) Use a low impedance source such as a logic gate to drive the PLLIN pin and keep the lead as short as possible.
7) The 47pF to 330pF ceramic capacitor between the I
TH
pin and signal ground should be placed as close as possible to the IC.
Figure 11 illustrates all branch currents in a three-phase switching regulator. It becomes very clear after studying the current waveforms why it is critical to keep the high switching current paths to a small physical size. High elec­tric and magnetic fields will radiate from these “loops” just as radio stations transmit signals. The output capaci­tor ground should return to the negative terminal of the input capacitor and not share a common ground path with any switched current paths. The left half of the circuit gives rise to the “noise” generated by a switching regu­lator. The ground terminations of the synchronous MOSFETs and Schottky diodes should return to the bottom plate(s) of the input capacitor(s) with a short isolated PC trace since very high switched currents are present. A separate isolated path from the bottom plate(s) of the input and output capacitor(s) should be used to tie in the IC power ground pin (PGND). This technique keeps inherent signals generated by high current pulses tak­ing alternate current paths that have finite impedances during the total period of the switching regulator. Exter­nal OPTI-LOOP compensation allows overcompensation for PC layouts which are not optimized but this is not the recommended design procedure.
24
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Simplified Visual Explanation of How a 3-Phase Controller Reduces Both Input and Output RMS Ripple Current
The effect of multiphase power supply design significantly reduces the amount of ripple current in both the input and output capacitors. The RMS input ripple current is divided by, and the effective ripple frequency is multiplied up by the number of phases used (assuming that the input voltage is greater than the number of phases used times the output voltage). The output ripple amplitude is also reduced by, and the effective ripple frequency is increased by the number of phases used. Figure 13 graphically illustrates the principle.
The worst-case input RMS ripple current for a single stage design peaks at twice the value of the output voltage. The worst-case input RMS ripple current for a two stage design results in peaks at 1/4 and 3/4 of the input voltage, and the worst-case input RMS ripple current for a three stage design results in peaks at 1/6, 1/2, and 5/6 of the input voltage. The peaks, however, are at ever decreasing
levels with the addition of more phases. A higher effective duty factor results because the duty factors “add” as long as the currents in each stage are balanced. Refer to AN19 for a detailed description of how to calculate RMS current for the single stage switching regulator.
Figure 6 illustrates the RMS input current drawn from the input capacitance versus the duty cycle as determined by the ratio of input and output voltage. The peak input RMS current level of the single phase system is reduced by 2/3 in a 3-phase solution due to the current splitting between the three stages.
The output ripple current is reduced significantly when compared to the single phase solution using the same inductance value because the V
/L discharge currents
OUT
term from the stages that has their bottom MOSFETs on subtract current from the (V
CC
– V
)/L charging current
OUT
resulting from the stage which has its top MOSFET on. The output ripple current for a 3-phase design is:
V
=
fL
()( )
OUT
DC V V
13 3
()
IN OUT
>
I
P-P
I
COUT
V
V
V
I
COUT
V
I
SW1
SW2
SW3
I
CIN
CIN
SW
I
I
I
SINGLE PHASE
TRIPLE PHASE
L1
L2
L3
3731 F13
Figure 13. Single and PolyPhase Current Waveforms
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LTC3731
PN
I
N
R R C Loss
COMPATH
MAX
L SENSE OUTESR
⎛ ⎝
⎞ ⎠
+
()
+
2
WUUU
APPLICATIO S I FOR ATIO
The ripple frequency is also increased by three, further reducing the required output capacitance when V
CC
< 3V
OUT
as illustrated in Figure 6.
The addition of more phases, by phase locking additional controllers, always results in no net input or output ripple at V
OUT/VIN
ratios equal to the number of stages implemented. Designing a system with multiple stages close to the V
OUT/VIN
ratio will significantly reduce the ripple voltage at the input and outputs and thereby improve efficiency, physical size and heat generation of the overall switching power supply. Refer to Application Note 77 for more information on PolyPhase circuits.
Efficiency Calculation
To estimate efficiency, the DC loss terms include the input and output capacitor ESR, each MOSFET R tor resistance R
, the sense resistance R
L
DS(ON)
SENSE
, induc-
and the forward drop of the Schottky rectifier at the operating output current and temperature. Typical values for the design example given previously in this data sheet are:
Main MOSFET R Sync MOSFET R C C R R V V V I
= 20m
INESR
OUTESR
= 2.5m
L
SENSE
SCHOTTKY
= 1.3V
OUT
= 12V
IN
= 45A
MAX
= 3m
= 3m
= 0.8V at 15A (0.7V at 90°C)
= 7m (9m at 90°C)
DS(ON)
= 7m (9m at 90°C)
DS(ON)
δ = 0.5%°C (MOSFET temperature coefficient) N = 3 f = 400kHz
The main MOSFET is on for the duty factor V
OUT/VIN
and the synchronous MOSFET is on for the rest of the period or simply (1 – V
OUT/VIN
). Assuming the ripple current is small, the AC loss in the inductor can be made small if a good quality inductor is chosen. The average current, I
is used to simplify the calculations. The equation
OUT,
below is not exact but should provide a good technique for the comparison of selected components and give a result that is within 10% to 20% of the final application.
Determining the MOSFETs
die temperature may require iterative calculations if one is not familiar with typical performance. A maximum operating junction tempera­ture of 90° to 100°C for the MOSFETs is recommended for high reliability applications.
Common output path DC loss:
This totals 3.7W + C
OUTESR
loss.
Total of all three main MOSFETs’ DC loss:
V
=
OUTINMAX
V
⎜ ⎝
PN
MAIN
This totals 0.87W + C
I
2
1 δ
+
()
⎟ ⎠
N
loss (at 90°C).
INESR
R C Loss
DS ON INESR
+
()
Total of all three synchronous MOSFETs’ DC loss:
PN
=
SYNC
V
11
⎜ ⎝
OUTINMAX
V
2
I
⎞ ⎟
N
R
δ
+
()
DS ON
()
This totals 7.2W at 90°C.
Total of all three main MOSFETs’ AC loss:
A
45
PV
≈Ω
MAIN IN
()
3
2
()()
23
()( )
2 1000
pF
26
1
⎛ ⎜
VV V
–. .
518118
+
kHz W
().
400 6 3
⎟ ⎠
=
3731fb
Page 27
PACKAGE DESCRIPTIO
LTC3731
U
This totals 1W at VIN = 8V, 2.25W at VIN = 12V and 6.25W at V
= 20V.
IN
Total of all three synchronous MOSFETs’ AC gate loss:
V
() () ()( ) ( )361545Q
This totals 0.08W at V
0.19W at V experience the Miller capacitance dissipation issue that the main switch does because the bottom switch turns on when its drain is close to ground.
The Schottky rectifier loss assuming 50ns nonoverlap time:
2 • 3(0.7V)(15A)(50ns)(4E5)
This totals 1.26W.
IN
fnC
G
V
DSSPEC
= 20V. The bottom MOSFET does not
IN
=
= 8V, 0.12W at VIN = 12V and
IN
V
IN
V
DSSPEC
E
The total output power is (1.3V)(45A) = 58.5W and the total input power is approximately 60W so the % loss of each component is as follows:
Main switch’s AC loss (V
Main switch’s DC loss 0.87W 1.5%
Synchronous switch AC loss 0.19W 0.3%
Synchronous switch DC loss 7.2W 12%
Power path loss 3.7W 6.1%
The numbers above represent the values at V can be seen from this simple example that two things can be done to improve efficiency: 1) Use two MOSFETs on the synchronous side and 2) use a smaller MOSFET for the main switch with smaller C loss with the DC loss. A smaller, less expensive MOSFET can actually perform better in the task of the main switch.
= 12V) 2.25W 3.75%
IN
= 12V. It
IN
to better balance the AC
MILLER
3731fb
27
Page 28
LTC3731
TYPICAL APPLICATIO
U
Figure 14. 3-Phase 65A Power Supply
OPTIONAL FILTER FOR
SYNCHRONIZATION
1000pF
0.01µF
10k
100pF
6.04k
0.01µF
330pF
3.3nF
2.2k
VIN: 3.3V TO 20V
: 1.5V AT 65A
V
OUT
SWITCHING FREQUENCY: 300kHz
S1
S1
S2
S2
S3
S3
V
9.09k
+
1000pF
+
1000pF
1000pF
+
IN
SYNC IN
300kHz
300pF
18k
1µF
1
V
CC
V
CC
2
PLLIN
3
PLLFLTR
4
FCB
5
+
IN
LTC3731G
6
IN
7
DIFFOUT
8
EAIN
9
SGND
10
SENSE1
11
SENSE1
12
SENSE2
13
SENSE2
14
SENSE3
15
SENSE3
16
RUN/SS
I
17
TH
I
TH
18
UVADJ
12k
CIN: SANYO OS-CON 25SP68M
: 270µF/2V ×8 PANASONIC SP EEUE0D271R
C
OUT
OR 470µF/2.5V ×6 SANYO POSCAP 2R5 TPD470M
D1 TO D3: DIODES INC. B340A
BOOST1
BOOST2
+
+
+
BOOST3
PHASMD
10
CLK
PGOOD
TG1
SW1
TG2
SW2
V
BG1
PGND
BG2
BG3
SW3
TG3
SGND
V
CC
0.1µF
0.1µF
PGOOD
47k
1
V
CC
10µF
V
CC
V
CC
5V TO 7V
V
IN
M1
M2 D1
M3
M4 D2
M5
M6 D3
L1 TO L3: 0.8µH SUMIDA CEP125-0R8 M1, M3, M5: IRF7821W ×2, Si7860DP
M2, M4, M6: IRF7832 ×2, Si7892DP × 2
L1
S1
V
IN
L2
S2
V
IN
L3
S3
OR HAT2168 ×2
OR HAT2165 ×2
0.002
+
0.002
+
0.002
+
S1
S2
S3
V
OUT
1.5V AT 65A
+
10µF
6.3V ×3
+
10µF 25V ×5
C
OUT
C
IN
68µF 25V
V
IN
3.3V TO 20V
36
NC
35
34
33
32
31
30
29
28
DR
27
26
25
24
23
22
21
20
19
1µF
0.1µF
3731 TA01
28
3731fb
Page 29
TYPICAL APPLICATIO
LTC3731
U
Figure 15. 2.5V/100A Power Supply
270pF
1.2k
330pF
I
TH
2700pF
V
CC
PGOOD
TG1
SW1
TG2
SW2
V
BG1
PGND
BG2
BG3
SW3
TG3
SGND2
36
CLK1
35
34
33
0.1µF
32
31
30
0.1µF
29
28
DR
27
26
1µF Cer.
+
25
24
23
22
21
20
19
0.1µF
V
CC
1
V
V
CC
8.2k
CC
CLKOUT
3.3k
+
V
4.7k
V
OUTS
OUTS
220pF
15k
DIFFOUT
EAIN
10×6
+
0.1µF
S1
S1
S2
S2
S3
S3
1000pF
+
1000pF
1000pF
+
RUN/SS
357k
V
IN
10
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
9
V
CC
PLLIN
PLLFLTR
FCB
+
IN
LTC3731G
IN
DIFFOUT
EAIN
SGND
SENSE1
SENSE1
SENSE2
SENSE2
SENSE3
SENSE3
RUN/SS
I
TH
UVADJ
CLKOUT
BOOST1
BOOST2
+
+
+
BOOST3
PHASMD
1µF
1
4.7µF
10
PGOOD
10k
M1
X2 M2,3
M4
X2 M5,6
M7
X2 M8,9
BOOST1
V
IN
BOOST2
D1
V
IN
D2
V
IN
D3
L1
L2
L3
BOOST3
0.002
+
S1
0.002
+
S2
0.002
+
S3
10µF
Cer.
S1
S2
S3
121k
+
10µF
10V
V5
V
OUT
+
C
OUT
V
IN
+
C
IN
1000pF
10k
1000pF
100pF
0.01µF
DIFFOUT
S4
S4
S5
S5
S6
S6
+
+
+
EAIN
10×6
UVADJ
RUN/SS
100pF
V
V
10pF
1000pF
1000pF
1000pF
UVADJ
CLK1
OUTS
OUTS
V
CC
1000pF
+
10
11
12
13
14
15
16
17
18
1
2
3
4
5
6
7
8
9
V
CC
PLLIN
PLLFLTR
FCB
+
IN
LTC3731G
IN
DIFFOUT
EAIN
SGND
SENSE4
SENSE4
SENSE5
SENSE5
SENSE6
SENSE6
RUN/SS
I
TH
UVADJ
+
+
+
PHASMD
CLKOUT
PGOOD
BOOST4
TG4
SW4
BOOST5
TG5
SW5
V
BG4
PGND
BG5
BG6
SW6
TG6
BOOST6
SGND2
V5
CLKOUT
1µF Cer.
PGOOD
0.1µF
0.1µF
+
10
4.7µF
BOOST4
M10
X2 M11,12
M13
X2 M14,15
BOOST5
V
IN
V
D4
IN
D5
BOOST6
L4
L5
S4
S5
0.002
+
0.002
+
S4
S5
36
35
34
33
32
31
30
29
28
DR
27
26
25
24
23
22
21
0.1µF
20
19
M16
X2 M17,18
V
IN
L6
0.002
D6
+
S6
S6
NOTES: V5: 5V TO 7V
: 10V TO 14V; V
V
IN
SWITCHING FREQUENCY: 500kHz (V5 = 5V)
: 2.5V/100A
OUT
M1, M4, M7, M10, M13, M16: SILICONIX Si7390DP OR HAT2168 M2, M3, M5, M6, M8, M9, M11, M12, M14, M15, M17, M18: SILICONIX Si7356DP OR HAT2165 D1 TO D6: B320A
L1 TO L6: TOKO FDH1040: 0.56µH
: 10µF/16V CERAMIC × 10 + 270µF/16V SANYO Os-Con
C
IN
: 100µF/6.3V/X5R × 10 + 330µF/4V × 8
C
OUT
3731 F15
3731fb
29
Page 30
LTC3731
PACKAGE DESCRIPTIO
U
G Package
36-Lead Plastic SSOP (5.3mm)
(Reference LTC DWG # 05-08-1640)
1.25 ±0.12
12.50 – 13.10* (.492 – .516)
2526 22 21 20 19232427282930313233343536
7.8 – 8.2
0.42 ±0.03 0.65 BSC
RECOMMENDED SOLDER PAD LAYOUT
5.00 – 5.60** (.197 – .221)
0.09 – 0.25
(.0035 – .010)
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE *
DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED .152mm (.006") PER SIDE
**
DIMENSIONS DO NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED .254mm (.010") PER SIDE
0.55 – 0.95
(.022 – .037)
MILLIMETERS
(INCHES)
5.3 – 5.7
0° – 8°
12345678 9 10 11 12 14 15 16 17 1813
0.65
(.0256)
BSC
0.22 – 0.38
(.009 – .015)
TYP
7.40 – 8.20
(.291 – .323)
2.0
(.079)
MAX
0.05
(.002)
MIN
G36 SSOP 0204
30
3731fb
Page 31
PACKAGE DESCRIPTIO
5.50 ±0.05
4.10 ±0.05
3.45 ±0.05 (4 SIDES)
RECOMMENDED SOLDER PAD LAYOUT
5.00 ± 0.10 (4 SIDES)
PIN 1 TOP MARK (NOTE 6)
U
UH Package
32-Lead Plastic QFN (5mm × 5mm)
(Reference LTC DWG # 05-08-1693)
0.70 ±0.05
PACKAGE OUTLINE
0.25 ± 0.05
0.50 BSC
0.75 ± 0.05
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
R = 0.115
TYP
31
LTC3731
0.23 TYP
(4 SIDES)
32
0.40 ± 0.10
1
2
3.45 ± 0.10 (4-SIDES)
0.200 REF
NOTE:
1. DRAWING PROPOSED TO BE A JEDEC PACKAGE OUTLINE M0-220 VARIATION WHHD-(X) (TO BE APPROVED)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
0.25 ± 0.05
(UH) QFN 0603
0.50 BSC
3731fb
31
Page 32
LTC3731
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LTC1628/LTC3728 2-Phase, Dual Output Synchronous Step-Down Reduces CIN and C
DC/DC Controllers 3.5V ≤ V
36V, I
IN
LTC1629/LTC3729 20A to 200A PolyPhase Synchronous Controllers Expandable from 2-Phase to 12-Phase, Uses All
Surface Mount Components, No Heat Sink, V
LTC1702A No R
TM
2-Phase Dual Synchronous Step-Down 550kHz, No Sense Resistor
SENSE
Controller
LTC1703 No R
Controller with 5-Bit Mobile VID Control V
2-Phase Dual Synchronous Step-Down Mobile Pentium® III Processors, 550kHz,
SENSE
IN
7V
LTC1708-PG 2-Phase, Dual Synchronous Controller with Mobile VID 3.5V ≤ VIN 36V, VID Sets V LT®1709/ High Efficiency, 2-Phase Synchronous Step-Down 1.3V ≤ V
3.5V, Current Mode Ensures
OUT
LT1709-8 Switching Regulators with 5-Bit VID Accurate Current Sharing, 3.5V ≤ V LTC1735 High Efficiency, Synchronous Step-Down Output Fault Protection, 16-Pin SSOP
Switching Regulator
LTC1736 High Efficiency, Synchronous Controller with 5-Bit Mobile Output Fault Protection, 24-Pin SSOP,
VID Control 3.5V ≤ V
LTC1778 No R
Controller I
Current Mode Synchronous Step-Down Up to 97% Efficiency, 4V VIN 36V, 0.8V V
SENSE
OUT
36V
IN
Up to 20A
LTC1929/ 2-Phase Synchronous Controllers Up to 42A, Uses All Surface Mount Components, LTC1929-PG No Heat Sinks, 3.5V V
LTC3711 No R
Controller with Digital 5-Bit Interface 0.925V ≤ V
Current Mode Synchronous Step-Down Up to 97% Efficiency, Ideal for Pentium III Processors,
SENSE
OUT
LTC3729 20A to 200A, 550kHz PolyPhase Synchronous Controller Expandable from 2-Phase to 12-Phase, Uses All Surface Mount
Components, V
LTC3730 IMVP III 3-Phase Synchronous Controller I LTC3732 VRM 9.0/9.1 3-Phase DC/DC Synchronous Step-Down 1.1V ≤ V
Up to 60A, 0.6V ≤ V
OUT
1.85V, 4.5V VIN 32V, SSOP-36
OUT
Controller
LTC3733 AMD Opteron™ CPU, DC/DC Synchronous Step-Down 3-Phase Operation, Up to 60A, 0.8V ≤ V
Controller
LTC3734/LTC3735 Intel Pentium M (Centrino™) CPU, DC/DC Synchronous 25A/40A, 4.5V ≤ VIN 36V
Step-Down Controller
LTC3778 Optional R
Current Mode Synchronous Step-Down 4V ≤ VIN 36V, Adjustable Frequency Up to 1.2MHz, TSSOP-20
SENSE
Controller
LTC3832 Low VIN High Power Synchronous Controller V
0.6V, I
OUT
LTC4008 4A Multichemistry Multicell Battery Charger NiCd, NiMH, Lead Acid, Li-Ion Batteries; 6V ≤ VIN 28V;
OUT
28V
No R
is a trademark of Linear Technology Corporation.
SENSE
1.19V V
, Power Good Output Signal, Synchronizable,
OUT
Up to 20A, 0.8V ≤ V
OUT
, PGOOD
OUT1
IN
36V
IN
2V, 4V VIN 36V, I
Up to 36V
IN
1.75V, Integrated MOSFET Drivers
OUT
20A, 3V VIN 8V
OUT
36V
OUT
Up to 20A
OUT
1.55V
OUT
5V
Up to 36V
IN
(0.9)(VIN),
OUT
32
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
www.linear.com
3731fb
LT 0106 REV B • PRINTED IN USA
© LINEAR TECHNOLOGY CORPORATION 2005
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