Datasheet LTC1771 Datasheet (Linear Technology)

Page 1
LTC1771
Final Electrical Specifications
Low Quiescent Current
High Efficiency Step-Down
DC/DC Controller
FEATURES
Very Low Standby Current: 10µA
Available in Space-Saving 8-Lead MSOP Package
High Output Currents
Wide VIN Range: 2.8V to 20V Operation
V
Range: 1.23V to 18V
OUT
High Efficiency: Over 93% Possible
±2% Output Accuracy
Very Low Dropout Operation: 100% Duty Cycle
Current Mode Operation for Excellent Line and Load Transient Response
Defeatable Burst ModeTM Operation
Short-Circuit Protected
Optional Programmable Soft-Start
Micropower Shutdown: IQ = 2µA
U
APPLICATIO S
Cellular Telephones and Wireless Modems
1- to 4-Cell Lithium-Ion-Powered Applications
Portable Instruments
Battery-Powered Equipment
Battery Chargers
Scanners
U
February 2000
DESCRIPTIO
The LTC®1771 is a high efficiency current mode step­down DC/DC controller that draws as little as 10µA DC supply current to regulate the output at no load while maintaining high efficiency for loads up to several amps.
The LTC1771 drives an external P-channel power MOSFET using a current mode, constant off-time architecture. An external sense resistor is used to program the operating current level. Current mode control provides short-circuit protection, excellent transient response and controlled start-up behavior. Burst Mode operation enables the LTC1771 to maintain high efficiency down to extremely low currents. Shutdown mode further reduces the supply current to a mere 2µA. For low noise applications, Burst Mode operation can be easily disabled with the MODE pin.
Wide input supply range of 2.8V to 18V (20V maximum) and 100% duty cycle operation for low dropout make the LTC1771 ideal for a wide variety of battery-powered appli­cations where maximizing battery life is important.
The LTC1771’s availability in both 8-lead MSOP and SO packages provides for a minimum area solution.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Burst Mode is a trademark of Linear Technology Corporation.
TYPICAL APPLICATIO
V
IN
C
SS
0.01µF
R
C
10k
C 22OpF
RUN/SS I
TH
V
FB
C
R1 1M 1%
Figure 1. High Efficiency Step-Down Converter
LTC1771
GND
U
V
IN
4.5V TO 18V
100
90
80
70
EFFICIENCY (%)
60
50
40
L1
15µH
10µF 25V CER
V
OUT
3.3V
C
OUT
150µF
6.3V
2A
1771 F01
+
R
SENSE
0.05
SENSE
PGATE
MODE
M1
Si6447DQ
V
IN
R2
1.64M 1%
5pF
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
UPS5817
LTC1771 Efficiency
VIN = 5V
VIN = 10V
VIN = 15V
V
= 3.3V
OUT
= 0.05
R
SENSE
0.1 1 100 1000 10000
10
LOAD CURRENT (mA)
1771 F01b
1
Page 2
LTC1771
RUN/SS
I
TH
V
FB
GND
1 2 3 4
8 7 6 5
MODE SENSE V
IN
PGATE
TOP VIEW
MS8 PACKAGE
8-LEAD PLASTIC MSOP
TOP VIEW
MODE SENSE V
IN
PGATE
RUN/SS
I
TH
V
FB
GND
S8 PACKAGE
8-LEAD PLASTIC SO
1
2
3
4
8
7
6
5
WWWU
ABSOLUTE AXI U RATI GS
(Note 1)
Input Supply Voltage (VIN)........................ –0.3V to 20V
Peak Driver Output Current < 10µs (PGATE) ............. 1A
RUN/SS Voltage ........................... – 0.3V to (VIN + 0.3V)
MODE Voltage .......................................... –0.3V to 20V
ITH, VFB Voltage .......................................... –0.3V to 5V
SENSE Voltage (VIN > 12V)...(VIN – 12V) to (VIN + 0.3V)
SENSE Voltage (VIN 12V) .......... –0.3V to (VIN + 0.3V)
UU
W
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
LTC1771EMS8
MS8 PART MARKING
T
= 125°C, θJA = 150°C/W
JMAX
LTKD
Junction Temperature (Note 2)............................ 125°C
Operating Temperature Range (Note 3)
LTC1771E......................................... –40°C to 85°C
LTC1771I ......................................... – 40°C to 85°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
LTC1771ES8 LTC1771IS8
S8 PART MARKING
T
= 125°C, θJA = 110°C/W
JMAX
1771 1771I
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
The denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C. VIN = 10V, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
FB
I
FB
I
SUPPLY
V
LINEREG
V
LOADREG
I
Q
V
SENSE(MAX)
V
SENSE(MIN)
V
SENSE(SLEEP)
t
OFF
V
MODE
2
= open unless otherwise specified.
RUN
Feedback Voltage (Note 5) 1.205 1.230 1.255 V Feedback Current (Note 5) 110 nA No-Load Supply Current VIN = 10V, I Reference Voltage Line Regulation VIN = 5V to 15V (Note 5) 0.003 0.03 %/V Output Voltage Load Regulation ITH = 0.5V to 2V, Burst Disabled (Note 5) 0.25 1 % Input DC Supply Current (Note 4)
Active Mode (PGATE = 0V) V Sleep Mode (Note 6) V Shutdown V Short Circuit V
Maximum Current Sense Threshold VFB = V Minimum Current Sense Threshold VFB = V Sleep Current Sense Threshold ITH = 1V 50 mV Switch Off Time VFB at Regulated Value 3.5 µs
Mode Pin Threshold V
= 2.8V to 18V 150 235 µA
IN
= 2.8V to 18V, VFB = 1.5V 9 15 µA
IN
= 2.8V to 18V, V
IN
= 2.8V to 18V, VFB = 0V 175 275 µA
IN
REF
REF
= 0V 70 µs
V
FB
Rising 0.5 1.3 2 V
MODE
= 0 (Note 6) 10 µA
LOAD
= 0V 2 6 µA
RUN
– 20mV 110 140 180 mV + 10mV, Burst Disabled –25 mV
Page 3
LTC1771
ELECTRICAL CHARACTERISTICS
The denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C. VIN = 10V, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
RUN/SS
I
RUN
PGATE tr, t
= open unless otherwise specified.
RUN
RUN/SS Pin Threshold V Source Current V PGATE Transition Time (Note 7)
f
Rise Time C Fall Time C
Rising 0.5 1.0 2 V
RUN/SS
= 0V, VIN = 2.8V to 18V 0.3 1 3 µA
RUN
= 2000pF 80 ns
LOAD
= 2000pF 90 ns
LOAD
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
Note 2: T dissipation P
Note 3: The LTC1771E is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. The LTC1771I is guaranteed and tested over the –40°C to 85°C operating temperature range.
is calculated from the ambient temperature TA and power
J
according to the following formulas:
D
LTC1771S8: TJ = TA + (PD)(110°C/W) LTC1771MS8: T
U
= TA + (PD)(150°C/W)
J
UU
PI FU CTIO S
RUN/SS (Pin 1): The voltage level on this pin controls shutdown/run mode (ground = shutdown, open/high = run). Connecting an external capacitor to this pin provides soft-start.
ITH (Pin 2): Error Amplifier Compensation Point. The current comparator threshold increases with this control voltage. Nominal voltage range for this pin is 0V to 3V.
VFB (Pin 3): Feedback of Output Voltage for Comparison to Internal 1.23V Reference. An external resistive divider across the output is returned to this pin.
GND (Pin 4): Ground Pin.
Note 4: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See Applications Information. Note 5: The LTC1771 is tested in a feedback loop that servos V
balance point for the error amplifier (V Note 6: No-load supply current consists of sleep mode current (9µA
typical) plus a small switching component necessary to overcome Schottky diode leakage and feedback resistor current.
Note 7: t
and tf measured at 10% to 90% levels.
r
= 1.23V).
ITH
to the
FB
PGATE (Pin 5): High Current Gate Driver for External P-Channel MOSFET Switch. Voltage swing is from ground to VIN.
VIN (Pin 6): Main Input Voltage Supply Pin. SENSE (Pin 7): Current Sense Input for Monitoring Switch
Current. Maximum switch current and Burst Mode threshold is programmed with an external resistor be­tween SENSE and VIN.
MODE (Pin 8): Burst Mode Enable/Disable Pin. Connect­ing this pin to VIN (or above 2V) enables Burst Mode operation, while connecting this pin to ground disables Burst Mode operation. Do not leave floating.
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LTC1771
UU
W
FUNCTIONAL BLOCK DIAGRA
V
IN
+
EA
1V
1V
1µA
ON
10% CURRENT
B
+
SOFT-START
2V
C
SS
RUN/SS
1
MODE
(BURST ENABLE)
8
1.23V
V
OUT
*
I
TH
2
R
C
C
C
GND
4
SLEEP
READY
READY
1.23V
REFERENCE
10% CURRENT
V
IN
C
ON
BLANKING
22k R
+
250k
V
IN
6
SENSE
7
SW
5
+
SENSE
V
IN
C
IN
*
OPTIONAL FOR FOLDBACK
CURRENT LIMITING
MODE
ON TRIGGER
1-SHOT
STRETCH
3.5µs
L
V
OUT
V
FB
3
+
C
OUT
1771 BD
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Page 5
OPERATIO
LTC1771
U
(Refer to Functional Block Diagram)
Main Control Loop
The LTC1771 uses a constant off-time, current mode step-down architecture. During normal operation, the P-channel MOSFET is turned on at the beginning of each cycle and turned off when the current comparator C triggers the 1-shot timer. The external MOSFET switch stays off for the 3.5µs 1-shot duration and then turns back on again to begin a new cycle. The peak inductor current at which C triggers the 1-shot is controlled by the voltage on Pin 3 (ITH), the output of the error amplifier EA. An external resistive divider connected between V ground allows EA to receive an output feedback voltage VFB. When the load current increases, it causes a slight decrease in VFB relative to the 1.23V reference, which in turn causes the ITH voltage to increase until the average inductor current matches the new load current.
The main control loop is shut down by pulling Pin 1 (RUN/SS) low. Releasing RUN/SS allows an internal 1µA current source to charge soft-start capacitor CSS. When CSS reaches 1V, the main control loop is enabled with the ITH voltage clamped at approximately 40% of its maxi­mum value. As CSS continues to charge, ITH is gradually released allowing normal operation to resume.
Burst Mode Operation
The LTC1771 provides outstanding low current efficiency and ultralow no-load supply current by using Burst Mode operation when the MODE pin is pulled above 2V. During Burst Mode operation, short burst cycles of normal switch­ing are followed by a longer idle period with the switch off and the load current is supplied by the output capacitor. During this idle period, only the minimum required cir­cuitry—1.23V reference and error amp—are left on, and the supply current is reduced to 9µA. At no load, the output capacitor is still discharged very slowly by leakage current in the Schottky diode and feedback resistor current result­ing in very low frequency burst cycles that add a few more microamps to the supply current.
OUT
and
Burst Mode operation is provided by clamping the mini­mum ITH voltage at 1V which represents about 25% of maximum load current. If the load falls below this level, i.e. the ITH voltage tries to fall below 1V, the burst comparator B switches state signaling the LTC1771 to enter sleep mode. During this time, EA is reduced to 10% of its normal operating current and the external compensation capaci­tor is disconnected and clamped to 1V so that the EA can drive its output with the lower available current. As the load discharges the output capacitor, the internal ITH voltage increases. When it exceeds 1V the burst comparator exits sleep mode, reconnects the external compensation com­ponents to the error amplifier output, and returns EA to full power along with the other necessary circuitry. This scheme (patent pending) allows the EA to be reduced to such a low operating current during sleep mode without adding unacceptable delay to wake up the LTC1771 due to the compensation capacitor on ITH required for stability in normal operation.
Burst Mode operation can be disabled by pulling the MODE pin to ground. In this mode of operation, the burst comparator B is disabled and the ITH voltage allowed to go all the way to 0V. The load can now be reduced to about 1% of maximum load before the loop skips cycles to maintain regulation. This mode provides a low noise output spec­trum, useful for reducing both audio and RF interference, at the expense of reduced efficiency at light loads.
Off-Time
The off-time duration is 3.5µs when the feedback voltage is close to the reference voltage; however, as the feedback voltage drops, the off-time lengthens and reaches a maxi­mum value of about 70µs when VFB is zero. This ensures that the inductor current has enough time to decay when the reverse voltage across the inductor is low such as during short circuit, thus protecting the MOSFET and inductor.
5
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LTC1771
WUUU
APPLICATIO S I FOR ATIO
The basic LTC1771 application circuit is shown in Figure 1 on the first page. External component selection is driven by the load requirement and begins with the selection of R
SENSE
. Once R
is known, L can be chosen. Next, the
SENSE
MOSFET and D1 are selected. The inductor is chosen based largely on the desired amount of ripple current and for Burst Mode operation. Finally CIN is selected for its ability to handle the required RMS input current and C
OUT
is chosen with low enough ESR to meet the output voltage ripple and transient specifications.
R
R
Selection
SENSE
is chosen based on the required output current.
SENSE
The LTC1771 current comparator has a maximum thresh­old of 140mV/R
. The current comparator threshold
SENSE
sets the peak inductor current, yielding a maximum aver­age output current I
equal to the peak less half the
MAX
peak-to-peak ripple current ∆IL. For best performance when Burst Mode operation is enabled, choose ∆IL equal to 35% of peak current. Allowing a margin for variations in the LTC1771 and external components gives the following equation for choosing R
R
SENSE
= 100mV/I
MAX
SENSE
:
At higher supply voltages, the peak currents may be slightly higher due to overshoot from current comparator delay and can be predicted from the second term in the following equation:
12
.
I
PEAK
014
≅+
R
SENSE
.
05
 
VV
IN OUT
LH
µ
()
/
 
Inductor Value Selection
Once R
is known, the inductor value can be deter-
SENSE
mined. The inductance value has a direct effect on ripple current. The ripple current decreases with higher induc­tance and increases with higher V
. The ripple current
OUT
during continuous mode operation is set by the off-time and inductance to be:
VV
∆=
It
L CONT OFF
()
Kool Mµ is a registered trademark of Magnetics, Inc.
OUT D
+
L
where t
= 3.5µs. However, the ripple current at low
OFF
loads during Burst Mode operation is:
I
L(BURST)
35% of I
PEAK
0.05/R
SENSE
For best efficiency when Burst Mode operation is enabled, choose:
I
L(CONT)
I
L(BURST)
so that the inductor current is continuous during the burst periods. This sets a minimum inductor value of:
L
= (70µH)(V
MIN
When burst is disabled, ripple currents less than ∆I can be achieved by choosing L > L
OUT
+ VD)(R
SENSE
)
. Lower ripple
MIN
L(BURST)
current reduces output voltage ripple and core losses, but too low of ripple current will adversely effect efficiency.
Inductor Core Selection
Once the value of L is known, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores, forcing the use of more expensive ferrite, molypermalloy or Kool Mµ® cores. Actual core loss is independent of core size for a fixed inductor value, but is very dependent on inductance selected. As inductance increases, core losses go down. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase.
Ferrite designs have very low core loss and are preferred at high switching frequencies, so design goals can con­centrate on copper loss and preventing saturation. Ferrite core material saturates “hard,” which means that induc­tance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent increase in voltage ripple. Do not allow the core to saturate!
Molypermalloy (from Magnetics, Inc.) is a very good, low loss core material for toroids, but it is more expensive than ferrite. A reasonable compromise from the same manu­facturer is Kool Mµ. Toroids are space efficient, especially when you can use several layers of wire. Because they generally lack a bobbin, mounting is more difficult. How­ever, designs for surface mount are available that do not increase the height significantly.
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APPLICATIO S I FOR ATIO
LTC1771
Power MOSFET Selection
An external P-channel power MOSFET must be selected for use with the LTC1771. The main selection criteria for the power MOSFET are the threshold voltage V the “on” resistance R
, reverse transfer capacitance
DS(ON)
GS(TH)
and
and total gate charge. Since the LTC1771 can operate down to input voltages as
low as 2.8V, a sublogic level threshold MOSFET (R
DS(ON)
guaranteed at VGS = 2.5V) is required for applications that work close to this voltage. When these MOSFETs are used, make sure that the input supply to the LTC1771 is less than the absolute maximum VGS rating (typically 12V), as the MOSFET gate will see the full supply voltage.
The required R
of the MOSFET is governed by its
DS(ON)
allowable power dissipation. For applications that may operate the LTC1771 in dropout, i.e. 100% duty cycle, at its worst case the required R
P
R
DS ON
()
=
I
()
OUT MAX P
P
2
()
1 δ
()
DS(ON)
+
is given by:
where PP is the allowable power dissipation and δP is the temperature dependency of R given for a MOSFET in the form of a normalized R
. (1 + δP) is generally
DS(ON)
DS(ON)
vs
temperature curve, but = 0.005/°C can be used as an approximation for low voltage MOSFETs.
In applications where the maximum duty cycle is less than 100% and the LTC1771 is in continuous mode, the R
DS(ON)
is governed by:
P
R
DS ON
=
()
DC I
()+()
VV
=
OUT D
DC
VV
P 2
OUT P
+
+
IN D
1 δ
where DC is the maximum operating duty cycle of the LTC1771.
Catch Diode Selection
The catch diode carries load current during the off-time. The average diode current is therefore dependent on the P-channel switch duty cycle. At high input voltages the
diode conducts most of the time. As VIN approaches V
OUT
the diode conducts only a small fraction of the time. The most stressful condition for the diode is when the output is short-circuited. Under this condition, the diode must safely handle I
at close to 100% duty cycle.
PEAK
To maximize both low and high current efficiencies, a fast switching diode with low forward drop and low reverse leakage should be used. Low reverse leakage current is critical to maximize low current efficiency since the leak­age can potentially exceed the magnitude of the LTC1771 supply current. Low forward drop is critical for high current efficiency since loss is proportional to forward drop. The effect of reverse leakage and forward drop on no- load supply current and efficiency for various Schottky diodes is shown in Table 1. As can be seen, these are conflicting parameters and the user must weigh the importance of each spec in choosing the best diode for the application.
Table 1. Effect of Catch Diode on Performance
LEAKAGE NO-LOAD EFFICIENCY
DIODE (V
MBR0540 0.25µA 0.50V 10.4µA 86.3% UPS5817 2.8µA 0.41V 11.8µA 88.2% MBR0520 3.7µA 0.36V 12.2µA 88.4% MBRS120T3 4.4µA 0.43V 12.2µA 87.9% MBRM120LT3 8.3µA 0.32V 14.0µA 89.4% MBRS320 19.7µA 0.29V 20.0µA 89.8%
CIN and C
= 3.3V) VF @ 1A SUPPLY CURRENT AT 10V/1A
R
Selection
OUT
At higher load currents, when the inductor current is continuous, the source current of the P-channel MOSFET is a square wave of duty cycle V
OUT/VIN
. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum capacitor current is given by:
OUT
12/
, where
C
required I
IN
RMS
IVVV
[]
MAX OUT IN OUT
=
()
V
IN
This formula has a maximum at VIN = 2V I
= I
RMS
/2. This simple worst-case condition is com-
OUT
monly used for design because even significant deviations do not offer much relief. Note that capacitor manufacturer’s
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LTC1771
WUUU
APPLICATIO S I FOR ATIO
ripple current ratings are often based on 2000 hours of life. This makes it advisable to further derate the capacitor, or to choose a capacitor rated at a higher temperature than required. Do not underspecify this component. An addi­tional 0.1µF ceramic capacitor is also helpful on VIN for high frequency decoupling.
The selection of C series resistance (ESR). Typically, once the ESR require­ment is satisfied, the capacitance is adequate for filtering. The output ripple (∆V mated by:
∆≈ +
V I ESR
OUT RIPPLE
where f is the operating frequency, C capacitance and I inductor. For output ripple less than 100mV, assure C required ESR is <2R
The first condition relates to the ripple current into the ESR of the output capacitance while the second term guaran­tees that the output capacitance does not significantly discharge during the operating frequency period due to ripple current. The choice of using smaller output capaci­tance increases the ripple voltage due to the discharging term but can be compensated for by using capacitors of very low ESR to maintain the ripple voltage at or below 50mV. The ITH pin OPTI-LOOPTM compensation compo­nents can be optimized to provide stable, high perfor­mance transient response regardless of the output capacitors selected.
Manufacturers such as Nichicon, United Chemicon and Sanyo should be considered for high performance through­hole capacitors. The OS-CON semiconductor dielectric capacitor available from Sanyo has the lowest ESR for its size of any aluminum electrolytic at a somewhat higher price. Typically once the ESR requirement is satisfied, the RMS current rating generally far exceeds the I requirement.
In surface mount applications multiple capacitors may have to be paralleled to meet the ESR or RMS current handling requirements of the application. Aluminum
OPTI-LOOP is a trademark of Linear Technology Corporation.
is driven by the required effective
OUT
) in continuous mode is approxi-
OUT
 
RIPPLE
SENSE
8
is the ripple current in the
.
fC
1
OUT
 
OUT
is the output
RIPPLE(P-P)
OUT
electrolytics and dry tantalum capacitors are both available in surface mount configurations. In case of tantalum, it is critical that the capacitors are surge tested for use in switching power supplies. An excellent choice is the AVX TPS, AVX TPSV and KEMET T510 series of surface mount tantalums, available in case heights ranging from 2mm to 4mm. Other capacitor types include Sanyo OS-CON, Sanyo POSCAP, Nichicon PL series and Panasonic SP.
Efficiency Considerations
The efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting efficiency and which change would produce the most improvement. Efficiency can be expressed as:
Efficiency = 100% – (L1 + L2 +L3 + ...)
where L1, L2, etc. are the individual losses as a percentage of input power.
Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in the LTC1771 circuits: the LTC1771 DC bias current, MOSFET gate charge current, I2R losses and catch diode losses.
1. The DC bias current is 9µA at no load and increases
proportionally with load up to a constant 150µA during continuous mode. This bias current is so small that this loss is negligible at loads above a milliamp but at no load accounts for nearly all of the loss.
2. The MOSFET gate charge current results from switch-
ing the gate capacitance of the power MOSFET switch. Each time the gate is switched from high to low to high again, a packet of charge dQ moves from VIN to ground. The resulting dQ/dt is the current out of VIN which is typically much larger than the DC bias current. In con­tinuous mode, I of the internal switch. Both the DC bias and gate charge losses are proportional to VIN and thus their effects will be more pronounced at higher supply voltages.
3. I2R losses are predicted from the internal switch, induc-
tor and current sense resistor. In continuous mode the average output current flows through L but is “chopped”
GATECHG
= fQP where QP is the gate charge
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APPLICATIO S I FOR ATIO
LTC1771
between the P-channel MOSFET in series with R and the output diode. The MOSFET R
DS(ON)
plus R
SENSE SENSE
multiplied by the duty cycle can be summed with the resistance of L to obtain I2R losses.
4. The catch diode loss is proportional to the forward drop as the diode conducts current during the off-time and is more pronounced at high supply voltages where the off-time is long. However, as discussed in the Catch Diode section, diodes with lower forward drops often have higher leakage currents, so although efficiency is improved, the no-load supply current will increase. The diode loss is calculated by multiplying the forward voltage drop times the diode duty cycle multiplied by the load current.
Other losses including CIN and C
ESR dissipative
OUT
losses, and inductor core losses, generally account for less than 2% total additional loss.
Output Voltage Programming
The output voltage is programmed with an external divider from V
to VFB (Pin 1) as shown in Figure 2. The
OUT
regulated voltage is determined by:
V
=+
123 1
OUT
.
 
 
R
1
R
2
To minimize no-load supply current, resistor values in the megohm range should be used. The increase in supply current due to the feedback resistors can be calculated from:
V
∆=
I
VIN
OUT OUT
+
12
RRVV
LTC1771
Figure 2. LTC1771 Adjustable Configuaration
IN
V
OUT
C
1771 F02
5pF
FF
V
GND
R2
FB
R1
A 5pF feedforward capacitor across R2 is recommended to minimize output voltage ripple in Burst Mode operation.
Run/Soft-Start Function
The RUN/SS pin is a dual purpose pin that provides the soft- start function and a means to shut down the LTC1771. Soft-start reduces the input surge current from VIN by gradually increasing the internal current limit. Power supply sequencing can also be accomplished using this pin.
An internal 1µA current source charges up an external capacitor CSS. When the voltage on the RUN/SS reaches 1V, the LTC1771 begins operating. As the voltage on the RUN/SS continues to ramp from 1V to 2.2V, the internal current limit is also ramped at a proportional linear rate. The current limits begins near 40% maximum load at V
= 1V and ends at maximum load at V
RUN/SS
RUN/SS
=
2.2V. The output current thus ramps up slowly, reducing the starting surge current required from the input power supply. If the RUN/SS has been pulled all the way to ground, there will be a delay before the current limit starts increasing and is given by:
t
CSS/I
DELAY
where I
CHG
CHG
1µA. Pulling the RUN/SS pin below 0.5V
puts the LTC1771 into a low quiescent current shutdown (IQ < 2µA).
Foldback Current Limiting
As described in the Catch Diode Selection, the worst-case dissipation for diode occurs with a short-circuit output, when the diode conducts the current limit value almost continuously. In most applications this will not cause excessive heating, even for extended fault intervals. How­ever, when heat sinking is at a premium or higher forward voltage drop diodes are being used, foldback current limiting should be added to reduce the current in propor­tion to the severity of the fault.
Foldback current limiting is implemented by adding two diodes in series between the output and the ITH pin as shown in the Functional Diagram. In a hard short (V
OUT
= 0V) the current will be reduced to approximately 25% of the maximum output current.
9
Page 10
LTC1771
WUUU
APPLICATIO S I FOR ATIO
Minimum On-Time Considerations
Minimum on-time t that the LTC1771 is capable of turning the top MOSFET on and off again. It is determined by internal timing delays and the amount of gate charge required to turn on the P-channel MOSFET. Low duty cycle applications may approach this minimum on-time limit and care should be taken to ensure that:
tt
=
ON OFF
where t for the LTC1771.
If the duty cycle falls below what can be accommodated by the minimum on-time, the LTC1771 will remain in Burst Mode operation even at high load currents. The output voltage will continue to be regulated, but the ripple current and ripple voltage will increase.
Mode Pin
Burst Mode operation is disabled by pulling MODE (Pin 8) below 0.5V. Disabling Burst Mode operation provides a low noise output spectrum, useful for reducing both audio and RF interference. It does this by keeping the frequency constant (for fixed VIN) down to much lower load current (1% to 2% of I voltage and current ripple at light loads. When Burst Mode operation is disabled, efficiency is reduced at light loads and no load supply current increases to 175µA.
PC Board Layout Checklist
When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the LTC1771. These items are also illustrated graphically in the layout diagram of Figure 3. Check the following in your layout:
= 3.5µs and t
OFF
ON(MIN)
VV
OUT D
VV
IN OUT
) and reducing the amount of output
MAX
is the smallest amount of time
+
t
>
ON(MIN)
()
ON MIN
is generally about 0.5µs
1. Is the Schottky diode
the external MOSFET and the input cap ground?
2. Is the 0.1µF input decoupling capacitor
nected between VIN (Pin 6) and ground (Pin 4)? This capacitor carries the high frequency peak currents.
3. Does the VFB pin connect directly to the feedback
resistors? The resistive divider R1 and R2 must be connected between the (+) plate of C ground. Locate the feedback resistors right next to the LTC1771. The VFB line should not be routed close to any nodes with high slew rates.
4. Is the 1000pF decoupling capacitor for the current
sense resistor connected as close as possible to Pins 6 and 7? Ensure accurate current sensing with Kelvin connections to the sense resistor.
5. Is the (+) plate of CIN
resistor ? This capacitor provides the AC current to the MOSFET.
6. Are the signal and power grounds segregated? The
signal ground consists of the (–) plate of C the LTC1771 and the resistive divider. The power ground consists of the Schottky diode anode and the (–) plate of CIN which should have as short lead lengths as possible.
7. Keep the switching node (SW) and the gate node
(PGATE) away from sensitive small signal nodes, espe­cially the voltage sensing feedback pin (VFB), and mini­mize their PC trace area.
8. High impedance nodes such as ITH and VFB are very
sensitive to leakage paths on the PC board due to stray flux, solder, epoxy, etc. Make sure PC board is clean. Water-soluble solder flux can be especially leaky if not cleaned properly. Leakage on ITH will manifest itself as excessive output ripple during Burst Mode operation. If the problem persists, adding a 10M resistor from Pin 2 to ground should eliminate the problem.
closely
closely
connected to the drain of
closely
OUT
connected to the sense
con-
and signal
, Pin 4 of
OUT
10
Page 11
P
W
VV
VV
A
-Channel R
DS(ON)
=
+
+
 
 
()( )
=
025
33 05
10 0 5
2133
0 130
2
.
..
.
.
.
WUUU
APPLICATIO S I FOR ATIO
Design Example
As a design example, assume VIN = 10V (nominal), VIN = 15V tion, we can easily calculate all the important components.
(MAX)
, V
OUT
= 3.3V, and I
= 2A. With this informa-
MAX
LTC1771
R
To optimize low current efficiency, MODE pin is tied to V
= 100mV/2A = 0.05
SENSE
IN
to enable Burst Mode operation, thus the minimum induc­tance necessary is:
L
= 70µH(3.3V + 0.5)(0.05) = 13.3µH
MIN
15µH is chosen for the application.
∆=
L
35
 
+
VV
33 05
..
15
=Is
H
µ
A
089.
.µ
For the feedback resistors, choose R1 = 1M to minimize supply current. R2 can then be calculated to be:
R2 = (V
/1.23 – 1) • R1 = 1.68M
OUT
Assume that the MOSFET dissipation is to be limited to PP = 0.25W.
If TA = 70°C and the thermal resistance of the MOSFET is 83°C/W, then the junction temperatures will be 91°C and
δP = 0.33. The required R
for the MOSFET can now
DS(ON)
be calculated:
Since the gate of the MOSFET will see the full input voltage, a MOSFET must be selected whose V
GS(MAX)
P-channel MOSFET that meets both the V R
requirement is the Si6447DQ.
DS(ON)
> 15V. A
GS(MAX)
and
The most stringent requirement for the Schottky diode occurs when V
= 0V (i.e., short circuit) at maximum
OUT
VIN. In this case the worst-case dissipation rises to:
PI V
=
SC AVG D
D
()
()
VV
IN D
With a 0.05 sense resistor I
V
IN
+
SC(AVG)
= 2A will result,
increasing the 0.5V Schottky diode dissipation to 1W. CIN is chosen for a RMS current rating of at least 1A at
temperature. C
is chosen with an ESR of 0.05 for low
OUT
output ripple. The output voltage ripple due to ESR is approximately:
V
ORIPPLE
(R
)(∆IL) = 0.05 (0.89A
ESR
) = 45mV
P-P
P-P
C
SS
1
C
ITH
R
R1
R2
BOLD LINES INDICATE HIGH CURRENT PATHS
RUN/SS
ITH
2
I
TH
LTC1771
3
V
FB
4
GND
C
FF
Figure 3. LTC1771 Layout Diagram
0.1µF
MODE
SENSE
V
PGATE
8
MODE
7
6
IN
5
+
C
IN
C
OUT
+
Q1
D1
L
V
OUT
1771 F03
11
Page 12
LTC1771
TYPICAL APPLICATIO S
3.3V to 2.5V/1A Regulator with Burst Mode Operation Enabled
U
220pF
220pF
10k
1M 1%
10k
1M 1%
0.01µF
1
2
3
4
RUN/SS
I
TH
LTC1771
V
FB
GND
1.02M 1%
5pF
MODE
SENSE
V
PGATE
8
7
6
IN
5
1000pF
Si3443DV
UPS5817
R
0.1 22µH
5V/2A Regulator with Burst Mode Operation Disabled
0.01µF
1
2
3
4
RUN/SS
I
TH
LTC1771
V
FB
GND
3.09M 1%
5pF
MODE
SENSE
V
PGATE
8
7
1000pF
6
IN
5
Si6447DQ
UPS5817
R
SENSE
0.05 22µH
SENSE
V
IN
C
IN
22µF 25V
C
OUT
150µF
6.3V
C
IN
22µF 25V
C
OUT
150µF
6.3V
3.3V TO 12V
V
OUT
2.5V 1A
1771 TA01
V
IN
5.5V TO 18V
V
OUT
5V 2A
1771 TA04
+
+
+
+
12
Page 13
TYPICAL APPLICATIO S
LTC1771
U
Low Dropout Single Cell Lithium-Ion to 3V
220pF
10k
1M 1%
220pF
0.01µF
10k
1M 1%
1
2
3
4
0.01µF
RUN/SS
I
TH
V
FB
GND
1
RUN/SS
2
I
3
V
4
GND
LTC1771
1.43M 1%
5pF
TH
LTC1771
FB
MODE
SENSE
PGATE
8.66M 1%
5pF
8
MODE
7
1000pF
6
V
IN
5
12V/1A Zeta Converter
8
MODE
SENSE
PGATE
MODE
7
1000pF
6
V
IN
5
47µH
Si3443DV
UPS5817
Si6435DQ
22µF
20V
+
R
SENSE
0.05 15µH
R
SENSE
0.025
UPS5817
47µH
+
C
IN
OUT
1771 TA05
C
IN
22µF 25V
C
OUT
150µF 20V
Li-Ion
3.3V TO 4.2V V
OUT
3V 2A
1771 TA02
V
IN
5V TO 18V
V
OUT
12V 1A
22µF 25V
+
C 150µF
6.3V
+
+
13
Page 14
LTC1771
U
TYPICAL APPLICATIONS
2.5V/1A Regulator with Foldback Current Limit
0.01µF
1
220pF
10k
1M
1%
U1: INTERNATIONAL RECTIFIER
TM
FETKY
220pF
10k
1M 1%
2
3
4
IRF7422D2
0.01µF
1
2
3
4
RUN/SS
I
TH
LTC1771
V
FB
GND
RUN/SS
I
TH
V
FB
GND
LTC1771
1.02M 1%
5pF
4.69M 1%
5pF
8
MODE
SENSE
PGATE
MODE
7
1000pF
6
V
IN
5
4-NiCd Battery Charger
8
MODE
SENSE
PGATE
MODE
7
6
V
IN
5
1000pF
R
SENSE
0.1
Si6447DQ
UPS5817
V
IN
1N4148 ×2
C
OUT
150µF
6.3V
1771 TA06
UPS5817
1771 TA07
2.8V TO 12V
V
OUT
2.5V 1A
V
IN
8V TO 18V
V
OUT
4-NiCd 1A
+
C
IN
22µF 25V
1234
U1
22µH
8
765
I
TH
+
R
0.1 47µH
SENSE
+
C
IN
22µF 25V
+
C
OUT
100µF 10V
14
Page 15
PACKAGE DESCRIPTIO
U
Dimension in inches (millimeters) unless otherwise noted.
MS8 Package
8-Lead Plastic MSOP
(LTC DWG # 05-08-1660)
0.118 ± 0.004* (3.00 ± 0.102)
8
7
6
5
LTC1771
0.193 ± 0.006 (4.90 ± 0.15)
12
0.040
± 0.006
SEATING
PLANE
(1.02 ± 0.15)
0.012
(0.30)
0.0256
REF
(0.65)
BSC
0.007 (0.18)
0.021
± 0.006
(0.53 ± 0.015)
* DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
° – 6° TYP
0
0.118 ± 0.004**
4
3
0.034 ± 0.004
(0.86 ± 0.102)
(3.00 ± 0.102)
0.006 ± 0.004 (0.15 ± 0.102)
MSOP (MS8) 1098
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197* (4.801 – 5.004)
7
8
5
6
0.228 – 0.244
(5.791 – 6.197)
0.010 – 0.020
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
*
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
× 45°
0°– 8° TYP
0.016 – 0.050
(0.406 – 1.270)
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
TYP
0.150 – 0.157** (3.810 – 3.988)
1
3
2
4
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
BSC
SO8 1298
15
Page 16
LTC1771
TYPICAL APPLICATIO
U
5V/1A Zeta Converter
220pF
10k
1M 1%
0.01µF
1
2
3
4
RUN/SS
I
TH
LTC1771
V
FB
GND
3.09M 1%
5pF
MODE
SENSE
V
PGATE
VIN (V)
I
2.8
+
R
SENSE
0.025
UPS5817
3.3 5
7.5
10 12
22µH
8
MODE
7
1000pF
6
IN
5
Si3443DV
22µF
22µH
10V
LOAD(MAX)
0.8
1.1
1.7
2.3
2.7
2.9
+
C 22µF 25V
+
C 150µF
6.3V
1771 TA03
IN
OUT
(A)
V
IN
2.8V TO 12V
V
OUT
5V 1A
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PART NUMBER DESCRIPTION COMMENTS
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= 300mA or 600mA
PEAK
IN
IN
RMS
RMS
Noise Noise
16
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
www.linear-tech.com
1771i LT/TP 0200 4K • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 2000
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