Voltage Monitor for Power Fail or Low Battery
Warning
■
Thermal Limiting
■
Performance Specified Over Temperature
■
All the LTC695 Features Plus Conditional Battery
Backup and External Reset Control
U
O
PPLICATI
A
S
DUESCRIPTIO
The LTC1235 provides complete power supply monitoring
and battery control functions for microprocessor reset,
battery backup, RAM write protection, power failure warning and watchdog timing. The LTC1235 has all the LTC695
features plus conditional battery backup and external reset
control. When an out-of-tolerance power supply condition
occurs, the reset outputs are forced to active states and the
Chip Enable output write-protects external memory. The
RESET output is guaranteed to remain logic low with VCC as
low as 1V. External reset control is provided by a debounced
push-button reset input.
The LTC1235 powers the active CMOS RAMs with a charge
pumped NMOS power switch to achieve low dropout and
low supply current. When primary power is lost, auxiliary
power, connected to the battery input pin, provides backup
power to the RAMs. The LTC1235 can be programmed by
a µP signal to either back up the RAMs or not. This extends
the battery life in situations where RAM data need not
always be saved when power goes down.
■
Critical µP Power Monitoring
■
Intelligent Instruments
■
Battery-Powered Computers and Controllers
■
Automotive Systems
≥ 7.5V
V
IN
10µF
51k
10k
THE LTC1235 EXTENDS BATTERY LIFE BY PROVIDING BATTERY POWER ONLY WHEN REQUIRED TO BACK UP RAM DATA.
IT SAVES THE BATTERY WHEN NO DATA BACKUP IS NEEDED. THE µP REQUESTS BACKUP WITH THE BACKUP PIN.
+
A
LT1086-5
V
IN
PPLICATITYPICAL
V
ADJ
OUT
+5V
+
100µF
O
U
0.1µF
+3V
V
CC
V
BATT
PFI
PB RST
LTC1235
BACKUP
V
OUT
RESET
PFO
WDI
For an early warning of impending power failure, the
LTC1235 provides an internal comparator with a userdefined threshold. An internal watchdog timer is also available, which forces the reset pins to active states when the
watchdog input is not toggled prior to the time-out period.
Battery Life vs
Backup Duty Cycle
µP
POWER
µP
SYSTEM
LTC1235 TA1
0.1µF
POWER TO
CMOS RAM
I/O LINE
µP RESET
µP NMI
I/O LINE
1
Page 2
LTC1235
A
W
O
LUTEXI T
S
A
WUW
ARB
I
Terminal Voltage
VCC.................................................... –0.3V to 6.0V
V
................................................. –0.3V to 6.0V
BATT
All Other Inputs.................... –0.3V to (VCC + 0.3V)
BACKUP Input ThresholdVCC > Reset Voltage Threshold
BACKUP Pullup Current (Note 4)3µA
V
in Battery Backup Mode (Note 5)I
OUT
V
in Battery Saving Mode (Note 5)VCC < V
OUT
VCC Supply Current (excluding I
Battery Supply Current in Battery Backup Mode andVCC = 0V, V
Battery Saving Mode (Note 5)●0.045
Battery Standby Current5.5 > VCC > V
(+ = Discharge, – = Charge)
Battery Switchover ThresholdPower Up70mV
VCC – V
BATT
Battery Switchover Hysteresis20mV
BATT ON Output Voltage (Note 6)I
BATT ON Output Short Circuit Current (Note 6)BATT ON = V
Push-Button Reset
PB RST Input ThresholdLogic Low0.8V
PB RST Input Low Time (Notes 4, 7)●40ms
Reset and Watchdog Timer
Reset Voltage Threshold
Reset Threshold Hysteresis40mV
Reset Active TimeV
Watchdog Time-out PeriodV
Reset Active Time PSRR1ms/V
Watchdog Time-out Period PSRR8ms/V
Minimum WDI Input Pulse WidthV
RESET Output Voltage At VCC = 1VI
RESET and LOW LINE Output VoltageI
(Note 6)I
= 2.8V, Backup = No Connection, TA = 25°C, unless otherwise noted.
PFO Short Circuit Source CurrentPFI = HIGH, PFO = 0V1325µA
(Note 6)PFI = LOW, PFO = V
PFI Comparator Response Time (falling)∆V
PFI Comparator Response Time (rising)∆V
(Note 6) with 10kΩ Pullup8
Chip Enable Gating
CE IN ThresholdV
CE IN Pullup Current (Note 4)3µA
CE OUT Output VoltageI
CE Propagation DelayV
CE OUT Output Short Circuit CurrentOutput Source Current30mA
= 2.8V, Backup = No Connection, TA = 25°C, unless otherwise noted.
BATT
ICS
= 1.6mA, VCC = 5V0.4V
SINK
= 1µA, VCC = 4.25V3.5
SOURCE
Logic High2.0
OUT
WDI = 0V●–50–8
= 3.2mA0.4V
SINK
I
= 1µA3.5
SOURCE
OUT
= –20mV, VOD = 15mV2µs
IN
= 20mV, VOD = 15mV40µs
IN
IL
V
IH
= 3.2mA0.4V
SINK
I
= 3.0mAV
SOURCE
I
= 1µA, VCC = 0VV
SOURCE
= 5V, CL = 20pF2035ns
CC
Output Sink Current35
●450µA
30mA
0.8V
2.0
– 1.50
OUT
– 0.05
OUT
●2045
The ● denotes specifications which apply over the operating temperature
range.
Note 1: Absolute maximum ratings are those values beyond which the life
of device may be impaired.
Note 2: All voltage values are with respect to GND.
Note 3: For military temperature range parts, consult the factory.
Note 4: The input pins of PB RST, BACKUP and CE IN, have weak internal
pullups which pull to the supply when the input pins are floating.
Note 5: The LTC1235 can be programmed either to provide or not to
provide battery backup power to the V
power down condition of V
pin which is latched internally when V
threshold. If the latched logic level of the BACKUP pin is high, V
is selected by the logic level of the BACKUP
OUT
pin during power failure. The
OUT
falls through the reset voltage
CC
OUT
will be
4
in Battery Backup Mode and will be switched to V
below V
be in Battery Saving Mode when V
Note 6: The output pins of BATT ON, LOW LINE, PFO, WDO, RESET and
RESET have weak internal pullups of typically 3µA. However, external
pullup resistors may be used when higher speed is required.
Note 7: The push-button reset input requires an active low signal.
Internally, this input signal is debounced and timed for a minimum of
40ms. When this condition is satisfied, the reset outputs go to the active
states. The reset outputs will remain in active states for a minimum of
140ms from the moment the push-button reset input is released from
logic low level.
. If the latched logic level of the BACKUP pin is low, V
BATT
falls below V
CC
when VCC falls
BATT
.
BATT
OUT
will
Page 5
TEMPERATURE (˚C)
–50
PFI INPUT THRESHOLD (V)
1.304
1.306
1.308
2575
LTC1235 G03
1.302
1.300
–250
50100 125
1.298
1.296
1.294
VCC = 5V
LPER
TIME (µs)
0
4
5
6
4
LTC1235 G09
3
2
0
2
6
1
1.315V
1.295V
12
108
V
PFI
= 20mV STEP
1816
14
VCC = 5V
T
A
= 25°C
+
–
V
PFI
1.3V
PFO
30pF
10k
+5V
PFO OUTPUT VOLTAGE (V)
V
vs I
OUT
OUT
5.00
4.95
4.90
SLOPE = 5Ω
4.85
OUTPUT VOLTAGE (V)
4.80
F
O
R
VCC = 5V
V
BATT
= 25°C
T
A
ATYPICA
= 2.8V
UW
CCHARA TERIST
E
C
vs I
OUT
2.80
2.78
SLOPE = 125Ω
2.76
OUTPUT VOLTAGE (V)
2.74
OUT
ICS
VCC = 0V
V
BATT
T
= 25°C
A
BACKUP MODE
SELECTED
LTC1235
Power Failure Input Threshold
vs TemperatureV
= 2.8V
4.75
0
RESET Output Voltage vs Supply
Voltage
5
TA = 25°C
EXTERNAL PULLUP = 10µA
V
4
3
2
RESET OUTPUT VOLTAGE (V)
1
0
0
Power Fail Comparator
Response Time
6
5
4
3
2
1
PFO OUTPUT VOLTAGE (V)
0
1.305V
1.285V
10
LOAD CURRENT (mA)
= 0V
BATT
1
SUPPLY VOLTAGE (V)
V
PFI
0
123
20
2
V
PFI
1.3V
= 20mV STEP
4
TIME (µs)
30
3
+
–
5
PFO
VCC = 5V
T
6
40
LTC1235 G01
4
LTC1235 G04
= 25°C
A
30pF
LTC1235 G07
50
5
87
2.72
232
224
216
208
200
RESET ACTIVE TIME (ms)
192
184
PFO OUTPUT VOLTAGE (V)
1.315V
1.295V
100
0
200
LOAD CURRENT (µA)
Reset Active Time vs
Temperature
VCC = 5V
–50
–250
TEMPERATURE (°C)
50100 125
2575
Power Fail Comparator
Response Time
6
VCC = 5V
5
= 25°C
T
A
4
3
V
= 20mV STEP
PFI
60
40
TIME (µs)
PFI
1.3V
2
1
0
V
0
20
300
10080
400
500
LTC1235 G02
Reset Voltage Threshold
vs Temperature
4.66
4.65
4.64
4.63
4.62
RESET VOLTAGE THRESHOLD (V)
4.61
LTC1235 G05
4.60
–50
–250
TEMPERATURE (°C)
50100 125
2575
LTC1235 G06
Power Fail Comparator Response
Time with Pullup Resistor
+
PFO
120
140
LTC1235 G08
30pF
180160
–
5
Page 6
LTC1235
U
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PI FU CTIO S
VCC: +5V supply input. The VCC pin should be bypassed
with a 0.1µF capacitor.
Backup: Logic input to control the PMOS switch, M2,
when VCC is lower than V
the reset voltage threshold, the status of the BACKUP pin
(logic low or logic high) is latched in Memory Logic and
used to turn on or off M2 when VCC is below V
latched status of the BACKUP pin is high, the Memory
Logic turns on M2 when VCC falls to 50mV greater than
V
. If the latched status of the BACKUP pin is low, the
BATT
Memory Logic keeps M2 off even after VCC falls below
V
. If the BACKUP pin is left floating it will be pulled high
BATT
by an internal pullup and the LTC1235 will provide battery
backup when VCC falls.
V
: Voltage output for backed up memory. Bypass with
OUT
a capacitor of 0.1µF or greater. During normal operation,
V
obtains power from VCC through an NMOS power
OUT
switch, M1, which can deliver up to 50mA and has a typical
on resistance of 5Ω. When VCC is lower than V
status of the BACKUP pin stored in Memory Logic controls
M2. If the status is high, the Memory Logic turns on M2
and V
is internally switched to V
OUT
status is low, the Memory Logic keeps M2 off and V
in Battery Saving Mode. If V
connect V
V
: Backup battery input. When VCC falls below V
BATT
OUT
to VCC.
the status of the BACKUP pin stored in the Memory Logic
controls M2. If the status is high, auxiliary power, connected
to V
is delivered to V
BATT
low, the Memory Logic keeps M2 off and V
Saving Mode. If backup battery or auxiliary power is not
used, V
should be connected to GND.
BATT
GND: Ground pin.
BATT ON: Battery on logic output from comparator C2.
BATT ON goes low when V
VCC. The output typically sinks 35mA and can provide base
drive for an external PNP transistor to increase the output
current above the 50mA rating of V
high when VCC falls below V
BACKUP pin stored in Memory Logic is high and V
switched to V
BATT
.
. While VCC is falling through
BATT
BATT
through M2. If the
BATT
and V
OUT
through M2. If the status is
OUT
is internally connected to
OUT
, if the status of the
BATT
are not used,
BATT
is in Battery
OUT
. BATT ON goes
OUT
. If the
BATT
, the
OUT
BATT
OUT
is
,
is
PFI: Power Failure Input. PFI is the noninverting input to
the Power Fail Comparator, C3. The inverting input is
internally connected to a 1.3V reference. The Power Failure
Output remains high when PFI is above 1.3V and goes low
when PFI is below 1.3V. Connect PFI to GND or V
OUT
when
C3 is not used.
PFO: Power Failure Output from C3. PFO remains high
when PFI is above 1.3V and goes low when PFI is below
1.3V. When VCC is lower than V
, C3 is shut down and
BATT
PFO is forced low.
PB RST: Logic input for direct connection to a push-
button. The push-button reset input requires an active low
signal. Internally, this input signal is debounced and timed
for a minimum of 40ms. When this condition is satisfied,
the reset pulse generator forces RESET to active low. The
RESET signal will remain active low for a minimum of
140ms from the moment the push-button reset input is
released from logic low level.
RESET: Logic output for µP reset control. The LTC1235
provides three ways to generate µP reset. First, whenever
VCC falls below either the reset voltage threshold (4.65V,
typically) or V
, RESET goes active low. After V
BATT
CC
returns to 5V, the reset pulse generator forces RESET to
remain active low for a minimum of 140ms. Second, when
the watchdog timer is enabled but not serviced prior to the
time-out period, the reset pulse generator also forces
RESET to active low for a minimum of 140ms for every
time-out period (see Figure 11). Third, when the PB RST
pin stays active low for a minimum of 40ms, RESET is
forced low by reset pulse generator. The RESET signal will
remain active low for a minimum of 140ms from the
moment the push-button reset input is released from logic
low level.
RESET: RESET is an active high logic output. It is the
inverse of RESET.
LOW LINE: Logic output from comparator C1. LOW LINE
indicates a low line condition at the VCC input. When V
CC
falls below the reset voltage threshold (4.65V typically),
LOW LINE goes low. As soon as VCC rises above the reset
voltage threshold, LOW LINE returns high (see Figure 1).
LOW LINE goes low when V
drops below V
CC
BATT
(see
Table 1).
6
Page 7
LTC1235
U
U
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PI FU CTIO S
WDI: Watchdog Input, WDI, is a three level input. Driving
WDI either high or low for longer than the watchdog timeout period, forces both RESET and WDO low. Floating WDI
disables the Watchdog Timer. The timer resets itself with
each transition of the Watchdog Input (see Figure 11).
WDO: Watchdog logic output. When the watchdog input
remains either high or low for longer than the watchdog
time-out period, WDO goes low. WDO is set high whenever
there is a transition on the WDI pin, or LOW LINE goes low.
The watchdog timer can be disabled by floating WDI (see
Figure 11).
W
BLOCK
IDAGRA
V
BATT
V
CC
BACKUP
–
C2
+
CE IN: Logic input to the Chip Enable gating circuit. CE IN
can be derived from microprocessor's address line and/or
decoder output. See Applications Information Section and
Figure 6 for additional information.
CE OUT: Logic output from the Chip Enable gating circuit.
When VCC is above the reset voltage threshold, CE OUT is
a buffered replica of CE IN. When VCC is below the reset
voltage threshold CE OUT is forced high (see Figure 6).
MEMORY
LOGIC
M2
M1
CHARGE
PUMP
V
OUT
BATT ON
CE IN
PFI
PB RST
WDI
1.3V
GND
LEVEL SENSE
AND
DEBOUNCE
TRANSITION
DETECTOR
LOW LINE
+
C1
–
–
+
OSC
RESET PULSE
GENERATOR
WATCHDOG
TIMER
CE OUT
PFO
RESET
RESET
WDO
LTC1235 BD
7
Page 8
LTC1235
PPLICATI
A
U
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S
IFORATIO
WU
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Power Monitoring
The LTC1235 uses a bandgap voltage reference and a
precision voltage comparator C1 to monitor the 5V supply
input on VCC (see BLOCK DIAGRAM). When VCC falls
below the reset voltage threshold, the reset outputs are
forced to active states. The reset voltage threshold accounts for a 5% variation on VCC, so the reset outputs
become active when VCC falls below 4.75V (4.65V typical).
On power-up, the reset signals are held active states for a
minimum of 140ms after the reset voltage threshold is
reached to allow the power supply and microprocessor to
stabilize. On power-down, the RESET signal remains active low even with VCC as low as 1V. This capability helps
hold the microprocessor in stable shutdown condition.
Figure 1 shows the timing diagram of the RESET signal.
The precision voltage comparator, C1, typically has 40mV
of hysteresis which ensures that glitches at VCC pin do not
activate the reset outputs. Response time is typically 10µ s.
To help prevent mistriggering due to transient loads, V
CC
pin should be bypassed with a 0.1µF capacitor with the
leads trimmed as short as possible.
LOW LINE is the output of the precision voltage comparator C1. When VCC falls below the reset voltage threshold,
LOW LINE goes low. LOW LINE returns high as soon as
VCC rises above the reset voltage threshold.
Push-Button Reset
The LTC1235 provides an logic input pin for direct
connection to a push-button. The push-button reset input,
PB RST, requires an active low signal. Internally, this input
signal is debounced and timed for a minimum of 40ms.
When this condition is satisfied, the reset pulse generator
forces the reset outputs to active states. The reset signals
will remain in active states for a minimum of 140ms from
the moment the push-button reset input is released from
logic low level (Figure 2).
V
RESET
LOW LINE
V2
V1 = RESET VOLTAGE THRESHOLD
V2 = RESET VOLTAGE THRESHOLD +
RESET THRESHOLD HYSTERESIS
t1
t1 = RESET ACTIVE TIME
LOGIC
HIGH
t2
LOGIC HIGH
LOGIC LOW
V1
LTC1235 F01
= 5V
V
CC
PB RST
RESET
RESET
V2
t1
LOGIC LOW
CC
V1
Figure 1. Reset Active Time
t1
t1 = PUSH-BUTTON RESET LOW TIME
t2 = RESET ACTIVE TIME
8
Figure 2. Push-Button Reset
Page 9
LTC1235
PPLICATI
A
U
O
S
IFORATIO
WU
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Voltage Output
During normal operation, the LTC1235 uses a charge
pumped NMOS power switch to achieve low dropout and
low supply current. This power switch can deliver up to
50mA to V
5Ω. The V
from VCC and has a typical on resistance of
OUT
pin should be bypassed with a capacitor of
OUT
0.1µ F or greater to ensure stability. Use of a larger bypass
capacitor is advantageous for supplying current to heavy
transient loads.
When operating currents larger than 50mA are required
from V
, or a lower dropout (VCC - V
OUT
voltage differ-
OUT
ential) is desired, the LTC1235 provides BATT ON output
to drive the base of external PNP transistor (Figure 3).
Another alternative to provide higher current is to connect
a high current Schottky diode from the VCC pin to the V
OUT
pin to supply the extra current.
ANY PNP POWER TRANSISTOR
R1
+5V
0.1µF
+3V
Figure 3. Using BATT ON to Drive External PNP Transistor
V
CC
LTC1235
V
BATT
BATT ON
GND
V
OUT
0.1µF
LTC1235 F03
The LTC1235 is protected for safe area operation with
short circuit limit. Output current is limited to approximately 200mA. If the device is overloaded for a long period
of time, thermal shutdown turns the power switch off until
the device cools down. The threshold temperature for
thermal shutdown is approximately 155°C with about
10°C of hysteresis which prevents the device from oscillating in and out of shutdown.
The PNP switch was not chosen for the internal power
switch because it injects unwanted current into the substrate. This current is collected by the V
pin in com-
BATT
petitive devices and adds to the charging current of the
battery which can damage lithium batteries. LTC1235
uses a charge pumped NMOS power switch to eliminate
unwanted charging current while achieving low dropout
and low supply current. Since no current goes to the
substrate, the current collected by V
pin is strictly
BATT
junction leakage.
Conditional Battery Backup
LTC1235 provides an unique feature to either allow V
to be switched to V
or to disable the CMOS RAM
BATT
OUT
battery backup function when primary power is lost.
Disabling the battery backup function is useful in conserving the backup battery's life when the SRAM doesn't need
battery backup during long term storage of a computer
system, or delivery of the computer system to the end
user.
The BACKUP pin (Pin 8) is used to serve this feature on
power-down. When VCC is falling through the reset voltage
threshold, the status of the BACKUP pin (logic low or logic
high) is stored in the Memory Logic (see BLOCK DIAGRAM). If the stored status is logic high and VCC fall to
50mV greater than V
connects the V
BATT
input to V
, a 125Ω PMOS switch, M2,
BATT
and the battery switchover
OUT
comparator, C2, shuts off the NMOS power switch, M1.
M2 is designed for very low dropout voltage (input-tooutput differential). This feature is advantageous for low
current applications such as battery backup in CMOS RAM
and other low power CMOS circuitry. If the stored status
is logic low and VCC falls to 50mV greater than V
Memory Logic keeps M2 off and C2 shuts off M1. V
BATT
, the
OUT
is
in Battery Saving Mode (see Figure 4). The supply current
in both mode is 1µA maximum.
On power-ups, C2 keeps M1 off before VCC reaches 70mV
higher than V
. On the first power-up after the battery
BATT
is replaced (with power off), the status stored in the
Memory Logic is undetermined. V
could be either in
OUT
Battery Backup Mode or in Battery Saving Mode. When
VCC is 70mV greater than V
, M1 connects V
BATT
OUT
to VCC.
C2 has typically 20mV of hysteresis to prevent spurious
switching when VCC remains nearly equal to V
BATT
and the
status stored in the Memory Logic is high. The response
time of C2 is approximately 20µs.
9
Page 10
LTC1235
CT
1A
V–V
EXTREQ'D
CCBATT
≥
µ
PPLICATI
A
BACKUP
V
CC
V
OUT
BACKUP
V
CC
V
OUT
U
O
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IFORATIO
V
IN BATTERY SAVING MODE
OUT
LOGIC LOW
RESET VOLTAGE THRESHOLD
V
BATT
Hi-Z
V
IN BATTERY BACKUP MODE
OUT
LOGIC
HIGH
RESET VOLTAGE THRESHOLD
V
BATT
WU
V
= V
OUT
U
BATT
LTC1235 F04
Replacing the Backup Battery with Power On
When changing the backup battery with system power on,
spurious resets can occur while battery is removed due to
battery standby current. Although battery standby current
is only a tiny leakage current, it can still charge up the stray
capacitance on the V
follows: When V
BATT
pin. The oscillation cycle is as
BATT
reaches within 50mV of VCC, the
LTC1235 switches to battery backup or battery saving
mode. In either case, the battery supply current pulls
V
low and the device goes back to normal operation.
BATT
The leakage current then charges up the V
pin again
BATT
and the cycle repeats.
If spurious resets during battery replacement pose no
problems, then no action is required. Otherwise, two
methods can be used to eliminate this problem. First, a
capacitor from V
to GND will allow time for battery
BATT
replacement by slowing the charge rate. For example, the
battery standby current is 1µA maximum over tempera-
ture and the external capacitor required to slow the charge
rate is:
Figure 4. Conditional Battery Backup Operation
The operating voltage at the V
pin ranges from 2.0V to
BATT
4.25V. High value capacitors, such as electrolytic or faradsize double layer capacitors, can be used for short term
memory backup instead of a battery. For capacitor backup,
see Typical Applications. The charging resistor for recharging rechargeable batteries should be connected to
V
through a diode since this eliminates the discharge
OUT
path that exists when V
collapses and RAM is not backed
CC
up (Figure 5).
V
– V
BATT
R
R
V
CC
LTC1235
V
BATT
– V
BACKUP
GND
4
D
1N4148
V
OUT
RAM
0.1µF
I/O LINE
µP
LTC1235 F05
OUT
OUT
I =
+5V
0.1µF
+3V
Figure 5. Charging External Battery Through V
where T
backup battery. With VCC = 4.5V, V
is the maximum time required to replace the
REQ'D
= 3V and T
BATT
REQ'D
=
3 sec, the value for external capacitor is 2µF. Second, a
resistor from V
to GND will hold the pin low while
BATT
changing the battery. For example, the battery standby
current is 1µA maximum over temperature and the external resistor required to hold V
V– 50mV
CC
R
≤
1A
µ
below VCC is:
BATT
With VCC = 4.5V, a 4.3MΩ resistor will work. With a 3V
battery, this resistor will draw only 0.7µA from the battery,
which is negligible in most cases.
If the battery connections are made with long wires or PC
traces, inductive spikes can be generated during battery
replacement. Even if a resistor is used to prevent spurious
resets as described above, these spikes can take the V
BATT
pin below GND violating the LTC1235 absolute maximum
ratings. A 0.1µF capacitor from V
to GND is recom-
BATT
mended to eliminate these potential spikes when battery
replacement is made through long wires.
10
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LTC1235
PPLICATI
A
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IFORATIO
WU
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Table 1 shows the state of each pin during battery backup.
If the backup battery is not used, connect V
and V
Table 1. Input and Output Status in Battery Backup Mode
SIGNALSTATUS
V
CC
BACKUPBACKUP is ignored.
V
OUT
V
BATT
BATT ONLogic high. The open circuit output voltage is equal to V
PFIPower Failure Input is ignored.
PFOLogic low
PB RSTPB RST is ignored.
RESETLogic low
RESETLogic high. The open circuit output voltage is equal to V
LOW LINE Logic low
WDIWatchdog Input is ignored.
WDOLogic high. The open circuit output voltage is equal to V
CE INChip Enable Input is ignored.
CE OUTLogic high. The open circuit output voltage is equal to V
to VCC.
OUT
C2 monitors VCC for active switchover.
V
is connected to V
OUT
The supply current is 1µA maximum.
BATT
through an internal PMOS switch.
BATT
to GND
.
OUT
.
OUT
.
OUT
.
OUT
IN and CE OUT, control the Chip Enable or Write inputs of
CMOS RAM. When VCC is +5V, CE OUT follows CE IN with
a typical propagation delay of 20ns. When VCC falls below
the reset voltage threshold or V
, CE OUT is forced
BATT
high, independent of CE IN. CE OUT is an alternative signal
to drive the CE, CS, or Write input of battery-backed up
CMOS RAM. CE OUT can also be used to drive the Store
or Write input of an EEPROM, EAROM or NOVRAM to
achieve similar protection. Figure 6 shows the timing
diagram of CE IN and CE OUT.
CE IN can be derived from the microprocessor’s address
decoder output. Figure 7 shows a typical nonvolatile
CMOS RAM application.
V
+5V
0.1µF
+3V
V
CC
BATT
GND
LTC1235
CE OUT
BACKUP
RESET
V
OUT
CE IN
+
10µF
20ns PROPAGATION DELAY
FROM DECODER
TO µP
0.1µF
V
CS
CC
62512
RAM
GND
LTC1235 F06
Memory Protection
The LTC1235 includes memory protection circuitry which
ensures the integrity of the data in memory by preventing
write operations when VCC is at invalid level. Two pins, CE
BACKUP = V
CE OUT
V
CE IN
CC
CC
V
= V
OUT
BATT
V1
Figure 6. Timing Diagram for CE IN and CE OUT
Figure 7. A Typical Nonvolatile CMOS RAM Application
V2
V1 = RESET VOLTAGE THRESHOLD
V2 = RESET VOLTAGE THRESHOLD +
RESET THRESHOLD HYSTERESIS
V
= V
OUT
BATT
LTC1235 F06
11
Page 12
LTC1235
10µF
100µF
V
IN
V
OUT
ADJ
LTC1235 F07
V
CC
0.1µF
TO µP
GND
PFO
LT1086-5
V
IN
≥ 7.5V
R4
10k
PFI
LTC1235
R1
51k
R2
10k
R3
300k
++
+5V
BACKUP
PPLICATI
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IFORATIO
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Power Fail Warning
The LTC1235 generates a Power Failure Output (PFO) for
early warning of failure in the microprocessor's power
supply. This is accomplished by comparing the Power
Failure Input (PFI) with an internal 1.3V reference. PFO
goes low when the voltage at PFI pin is less than 1.3V.
Typically PFI is driven by an external voltage divider (R1
and R2 in Figures 8 and 9) which senses either an
unregulated DC input or a regulated 5V output. The voltage
divider ratio can be chosen such that the voltage at PFI pin
falls below 1.3V several milliseconds before the +5V
supply falls below the maximum reset voltage threshold
4.75V. PFO is normally used to interrupt the microprocessor to execute shut-down procedure between PFO and
RESET or RESET.
The power fail comparator, C3, does not have hysteresis.
Hysteresis can be added however, by connecting a resistor between the PFO output and the noninverting PFI input
pin as shown in Figures 8 and 9. The upper and lower trip
points in the comparator are established as follows:
When PFO output is low, R3 sinks current from the
summing junction at the PFI pin.
V5V
HYSTERESIS
R1
==
850mV
R3
R3 ≈ 5.88 R1
Choose R3 = 300kΩ and R1 = 51kΩ. Also select R4 =
10kΩ which is much smaller than R3.
When PFO output is high, the series combination of R3 and
R4 source current into the PFI summing junction.
Example 1: The circuit in Figure 8 demonstrates the use of
the power fail comparator to monitor the unregulated
power supply input. Assuming the the rate of decay of the
supply input VIN is 100mV/ms and the total time to execute
a shut-down procedure is 8ms. Also the noise of VIN is
200mV. With these assumptions in mind, we can reasonably set VL = 7.5V which 1.25V greater than the sum of
maximum reset voltage threshold and the dropout voltage
of LT1086-5 (4.75V + 1.5V) and V
12
V =1.3V 1+
H
V1.3V 1
=+
L
R1R2R1
R1
R2
Assuming R4«R3,V5V
+
R3
(5V –1.3V)R1
–
1.3V(R3R4)
HYSTERESIS
+
=
HYSTERESIS
R1
R3
= 850mV.
Figure 8. Monitoring
LTC1235 Power Fail Comparator
V
IN
+
LT1086-5
≥ 6.5V
10µF
Figure 9. Monitoring
Power Fail Comparator
V
V
OUT
IN
ADJ
10µF
+
Unregulated
R1
27k
R2
8.2k
R5
3.3k
Regulated
DC Supply with the
+5V
R3
2.7M
0.1µF
V
R4
10k
DC Supply with the LTC1235
CC
PFO
PFI
LTC1235
BACKUP
GND
TO µP
LTC1235 F08
Page 13
LTC1235
PPLICATI
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IFORATIO
WU
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The 10.7ms allows enough time to execute shut-down
procedure for microprocessor and 831mV of hysteresis
would prevent PFO from going low due to the noise of VIN.
Example 2: The circuit in Figure 9 can be used to measure
the regulated 5V supply to provide early warning of power
failure. Because of variations in the PFI threshold, this
circuit requires adjustment to ensure that the PFI comparator trips before the reset threshold is reached. Adjust
R5 such that the PFO output goes low when the VCC supply
reaches the desired level (e.g., 4.85V).
Monitoring the Status of the Battery
C3 can also monitor the status of the memory backup
battery (Figure 10). If desired, the CE OUT can be used to
apply a test load to the battery. Since CE OUT is forced high
in battery backup mode, the test load will not be applied to
the battery while it is in use, even if the microprocessor is
not powered.
watchdog time-out period and reset active time. The
watchdog time-out period is restarted as soon as the reset
outputs are inactive. When either a high-to-low or low-tohigh transition occurs at the WDI pin prior to time-out, the
watchdog time is reset and begins to time out again. To
ensure the watchdog time does not time out, either a highto-low or low-to-high transition on the WDI pin must
occur at or less than the minimum time-out period. If the
input to the WDI pin remains either high or low, reset
pulses will be issued every 1.6 seconds typically. The
watchdog timer can be deactivated by floating the WDI pin.
The timer is also disabled when VCC falls below the reset
voltage threshold or V
BATT
.
The Watchdog Output, WDO, goes low if the watchdog
timer is allowed to time out and remains low until set high
by the next transition on the WDI pin. WDO is also set high
when VCC falls below the reset voltage threshold or V
+5V
BATT
.
Watchdog Timer
The LTC1235 provides a watchdog timer function to
monitor the activity of the microprocessor. If the microprocessor does not toggle the Watchdog Input (WDI)
within the time-out period, the reset outputs are forced to
active states for a minimum of 140ms. The watchdog
time-out period is fixed at 1.0 second minimum on the
LTC1235. This time-out period provides adequate time for
many systems to service the watchdog timer immediately
after a reset. Figure 11 shows the timing diagram of
V
= 5V
CC
WDI
WDO
t2
V
V
BATT
CC
R1
1M
+3V
Figure 10. Backup Battery Monitor with Optional Test Load
t1 = RESET ACTIVE TIME
t2 = WATCHDOG TIME-OUT PERIOD
R2
1M
RL 20K
OPTIONAL TEST LOAD
t2
PFI
PFI
CE OUT
LTC1235
PFO
BACKUP
CE IN
GND
LOW BATTERY SIGNAL
TO µP I/O PIN
TO µP I/O PIN
}
LTC1235 F09
RESET
t1
Figure 11. Watchdog Time-out Period and Reset Active Time
t1
t1
LTC1235 F11
13
Page 14
LTC1235
10µF
V
BATT
V
CC
LTC1235
V
OUT
GND
LTC1235 TA4
V
CC
LOW LINE
CE IN
CE OUT
0.1µF
CS
20ns PROPAGA-
TION DELAY
62512
RAM
A
+5V
+3V
0.1µF
+
V
CC
62128
RAM
C
V
CC
CS
2
62128
RAM
B
CS
A
CS
B
CS
C
CS
1
CS
1
OPTIONAL CONNECTION FOR
ADDITIONAL RAMs
CS
2
0.1µF
0.1µF
µP
SYSTEM
BACKUP
Capacitor Backup with 74HC4016 SwitchWrite Protect for Additional RAMs
R1
10k
1
R2
30k
PPLICATITYPICAL
74HC4016
7
0.1µF
14121110
13
100µF
+5V
2
U
O
SA
V
CC
V
BATT
+
LTC1235
LOW LINE
GND
V
OUT
0.1µF
LTC1235 TA3
14
Page 15
PACKAGE DESCRIPTIO
U
Dimensions in inches (millimeters) unless otherwise noted.
N Package
16-Lead Plastic DIP
0.770
(19.558)
0.260 ± 0.010
(6.604 ± 0.254)
12
16
15
2
1
1314
456
3
11
7
910
8
LTC1235
0.300 – 0.325
(7.620 – 8.255)
0.009 - 0.015
(0.229 - 0.381)
+0.025
0.325
–0.015
+0.635
8.255
()
–0.381
0.015
(0.381)
MIN
0.130 ± 0.005
(3.302 ± 0.127)
0.125
(3.175)
MIN
SEE NOTE
0.045 ± 0.015
(1.143 ± 0.381)
0.100 ± 0.010
(2.540 ± 0.254)
SO Package
16-Lead SOIC
(10.109 – 10.490)
15 141312
16
0.045 – 0.065
(1.143 – 1.651)
0.398 – 0.413
0.065
(1.651)
TYP
0.018 ± 0.003
(0.457 ± 0.076)
N16 1291
10 9
11
0.394 – 0.419
(10.008 – 10.643)
2345678
0.050
(1.270)
TYP
1
0.014 – 0.019
(0.356 – 0.483)
TYP
0.291 – 0.299
0.005
(0.127)
RAD MIN
0.009 – 0.013
(0.229 – 0.330)
NOTE:
PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS.
THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS.
(7.391 – 7.595)
0.010 – 0.029
(0.254 – 0.737)
SEE NOTE
× 45°
0° – 8° TYP
0.016 – 0.050
(0.406 – 1.270)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of circuits as described herein will not infringe on existing patent rights.
0.093 – 0.104
(2.362 – 2.642)
0.037 – 0.045
(0.940 – 1.143)
0.004 – 0.012
(0.102 – 0.305)
SOL16 12/91
15
Page 16
LTC1235
U.S. Area Sales Offices
NORTHEAST REGIONCENTRAL REGIONNORTHWEST REGION
Linear Technology CorporationLinear Technology CorporationLinear Technology Corporation
One Oxford ValleyChesapeake Square782 Sycamore Dr.
2300 E. Lincoln Hwy.,Suite 306229 Mitchell Court, Suite A-25Milpitas, CA 95035
Langhorne, PA 19047Addison, IL 60101Phone: (408) 244-2050
Phone: (215) 757-8578Phone: (708) 620-6910FAX: (408) 432-6331
FAX: (215) 757-5631FAX: (708) 620-6977
SOUTHEAST REGIONSOUTHWEST REGION
Linear Technology CorporationLinear Technology Corporation
17060 Dallas Parkway22141 Ventura Blvd.
Suite 208Suite 206
Dallas, TX 75248Woodland Hills, CA 91364
Phone: (214) 733-3071Phone: (818) 703-0835
FAX: (214) 380-5138FAX: (818) 703-0517
International Sales Offices
FRANCEKOREAUNITED KINGDOM
Linear Technology S.A.R.L.Linear Technology Korea BranchLinear Technology (UK) Ltd.
"Le Quartz"Namsong Building, #505The Coliseum, Riverside Way
58 Chemin de la JusticeItaewon-Dong 260-199Camberley, Surrey GU15 3YL
92290 Chatenay MallabryYongsan-Ku, SeoulUnited Kingdom
FranceKoreaPhone: 011-44-276-677676
Phone: 33-1-46316161 (170)Phone: 82-2-792-1617FAX: 011-44-276-64851
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