Datasheet LTC1235CS, LTC1235CN Datasheet (Linear Technology)

Page 1
LTC1235
BACKUP DUTY CYCLE (%)
0
BATTERY LIFE (NORMALIZED)
6
8
10
80
LTC1235 TA02
4
2
0
20
40
60
100
1
3
5
7
9
LTC1235
LTC695 (WITHOUT CONDITIONAL BATTERY BACKUP)
Microprocessor
Supervisory Circuit
EATU
F
Guaranteed
1.5mA Maximum Supply Current
Fast (35ns Max.) Onboard Gating of RAM Chip
S
RE
Reset Assertion at VCC = 1V
Enable Signals
Conditional Battery Backup Extends Battery Life
4.65V Precision Voltage Monitor
Power OK/Reset Time Delay: 200ms
External Reset Control
Minimum External Component Count
1µA Maximum Standby Current
Voltage Monitor for Power Fail or Low Battery Warning
Thermal Limiting
Performance Specified Over Temperature
All the LTC695 Features Plus Conditional Battery Backup and External Reset Control
U
O
PPLICATI
A
S
DUESCRIPTIO
The LTC1235 provides complete power supply monitoring and battery control functions for microprocessor reset, battery backup, RAM write protection, power failure warn­ing and watchdog timing. The LTC1235 has all the LTC695 features plus conditional battery backup and external reset control. When an out-of-tolerance power supply condition occurs, the reset outputs are forced to active states and the Chip Enable output write-protects external memory. The RESET output is guaranteed to remain logic low with VCC as low as 1V. External reset control is provided by a debounced push-button reset input.
The LTC1235 powers the active CMOS RAMs with a charge pumped NMOS power switch to achieve low dropout and low supply current. When primary power is lost, auxiliary power, connected to the battery input pin, provides backup power to the RAMs. The LTC1235 can be programmed by a µP signal to either back up the RAMs or not. This extends the battery life in situations where RAM data need not always be saved when power goes down.
Critical µP Power Monitoring
Intelligent Instruments
Battery-Powered Computers and Controllers
Automotive Systems
7.5V
V
IN
10µF
51k
10k
THE LTC1235 EXTENDS BATTERY LIFE BY PROVIDING BATTERY POWER ONLY WHEN REQUIRED TO BACK UP RAM DATA. IT SAVES THE BATTERY WHEN NO DATA BACKUP IS NEEDED. THE µP REQUESTS BACKUP WITH THE BACKUP PIN.
+
A
LT1086-5
V
IN
PPLICATITYPICAL
V
ADJ
OUT
+5V
+
100µF
O
U
0.1µF
+3V
V
CC
V
BATT
PFI
PB RST
LTC1235
BACKUP
V
OUT
RESET
PFO
WDI
For an early warning of impending power failure, the LTC1235 provides an internal comparator with a user­defined threshold. An internal watchdog timer is also avail­able, which forces the reset pins to active states when the watchdog input is not toggled prior to the time-out period.
Battery Life vs
Backup Duty Cycle
µP
POWER
µP
SYSTEM
LTC1235 TA1
0.1µF
POWER TO CMOS RAM
I/O LINE µP RESET µP NMI
I/O LINE
1
Page 2
LTC1235
A
W
O
LUTEXI T
S
A
WUW
ARB
I
Terminal Voltage
VCC.................................................... –0.3V to 6.0V
V
................................................. –0.3V to 6.0V
BATT
All Other Inputs.................... –0.3V to (VCC + 0.3V)
Input Current
VCC.............................................................. 200mA
V
............................................................. 50mA
BATT
WU
/
PACKAGE
V
BATT
V
OUT
V
CC
GND
BATT ON
LOW LINE
PB RST
BACKUP
T
O
RDER I FOR ATIO
TOP VIEW
1
2
3
4
LTC1235
5 6 7
8
N PACKAGE
16-LEAD PLASTIC DIP
= 110°C, θJA = 130°C/W
JMAX
ORDER PART
NUMBER
RESET
16 15
RESET
14
WDO
13
CE IN
12
CE OUT WDI
11
PFO
10
PFI
9
U G
S
(Notes 1 and 2)
V
Output Current .................. Short Circuit Protected
OUT
Power Dissipation............................................. 500mW
Operating Temperature Range
LTC1235C ............................................ 0°C to 70°C
Storage Temperature Range ................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................ 300°C
U
(Note 3)
V
BATT
V
GND
BATT ON
LOW LINE
PB RST
BACKUP
CONDITIONS: PCB MOUNT ON FR4 MATERIAL, STILL AIR AT 25°C, COPPER TRACE
1 2
OUT
V
3
CC
4
5 6
7
8
16-LEAD PLASTIC SOL
T
= 110°C, θJA = 130°C/W
JMAX
TOP VIEW
LTC1235
S PACKAGE
16 15
14 13
12 11
10
9
PRESET PRESET WDO
CE IN CE OUT WDI PFO
PFI
ORDER PART
NUMBER
LTC1235CSLTC1235CN
U
PRODUCT SELECTIO GUIDE
WATCHDOG BATTERY POWER FAIL RAM WRITE PUSH-BUTTON BATTERY
PINS RESET TIMER BACKUP WARNING PROTECT RESET BACKUP
LTC1235 16 X X X X X X X
LTC690 8 X X X X LTC691 16 X X X X X LTC694 8 X X X X LTC695 16 X X X X X LTC699 8 X X LTC1232 8 X X X
CONDITIONAL
2
Page 3
LTC1235
LECTRICAL C CHARA TERIST
E
VCC = Full Operating Range, V
PARAMETER CONDITONS MIN TYP MAX UNITS Battery Backup Switching
Operating Voltage Range
V
CC
V
BATT
V
Output Voltage I
OUT
BACKUP Input Threshold VCC > Reset Voltage Threshold
BACKUP Pullup Current (Note 4) 3 µA V
in Battery Backup Mode (Note 5) I
OUT
V
in Battery Saving Mode (Note 5) VCC < V
OUT
VCC Supply Current (excluding I
Battery Supply Current in Battery Backup Mode and VCC = 0V, V
Battery Saving Mode (Note 5) 0.04 5
Battery Standby Current 5.5 > VCC > V
(+ = Discharge, – = Charge)
Battery Switchover Threshold Power Up 70 mV
VCC – V
BATT
Battery Switchover Hysteresis 20 mV BATT ON Output Voltage (Note 6) I BATT ON Output Short Circuit Current (Note 6) BATT ON = V
Push-Button Reset
PB RST Input Threshold Logic Low 0.8 V
PB RST Input Low Time (Notes 4, 7) 40 ms
Reset and Watchdog Timer
Reset Voltage Threshold Reset Threshold Hysteresis 40 mV Reset Active Time V
Watchdog Time-out Period V
Reset Active Time PSRR 1 ms/V Watchdog Time-out Period PSRR 8 ms/V Minimum WDI Input Pulse Width V RESET Output Voltage At VCC = 1V I RESET and LOW LINE Output Voltage I
(Note 6) I
= 2.8V, Backup = No Connection, TA = 25°C, unless otherwise noted.
BATT
)I
OUT
ICS
4.75 5.50 V
2.00 4.25
= 1mA V
OUT
I
= 50mA VCC – 0.5 VCC – 0.25
OUT
Logic Low 0.8 V Logic High 2.0
= 250µA, VCC < V
OUT
BATT
1M Pulldown on V
50mA 0.6 1.5 mA
OUT
BATT
Power Down 50
= 3.2mA 0.4 V
SINK
BATT ON = 0V Source Current 0.5 1 25 µA
Logic High 2.0
= 5V 160 200 240 ms
CC
= 5V 1.2 1.6 2.00 sec
CC
= 0.4V, VIH = 3.5V 200 ns
IL
SINK
SINK SOURCE
OUT
= 10µA, VCC = 1V 4 200 mV = 1.6mA, VCC = 4.25V 0.4 V
= 1µA, VCC = 5V 3.5
BATT
OUT
= 2.8V 0.04 1 µA
+ 0.2V –0.1 +0.02 µA
BATT
Sink Current 35 mA
V
0.6 2.5
–1.0 +0.10
4.5 4.65 4.75 V
140 200 280
1.0 1.6 2.25
– 0.05 V
CC
– 0.1 VCC – 0.005
CC
V
– 0.1 V
BATT
– 0.005 V
CC
– 0.02 V
BATT
0V
3
Page 4
LTC1235
LECTRICAL C CHARA TERIST
E
VCC = Full Operating Range, V
PARAMETER CONDITONS MIN TYP MAX UNITS
RESET and WDO Output Voltage I
(Note 6)
RESET, RESET, WDO, LOW LINE Output Source Current 1 3 25 µA
Output Short Circuit Current (Note 6) Output Sink Current 25 mA
WDI Input Threshold Logic Low 0.8 V
WDI Input Current WDI = V
Power Fail Detector
PFI Input Threshold VCC = 5V 1.25 1.3 1.35 V PFI Input Threshold PSRR 0.3 mV/V PFI Input Current ±0.01 ±25 nA PFO Output Voltage (Note 6) I
PFO Short Circuit Source Current PFI = HIGH, PFO = 0V 1 3 25 µA
(Note 6) PFI = LOW, PFO = V
PFI Comparator Response Time (falling) V PFI Comparator Response Time (rising) V
(Note 6) with 10k Pullup 8
Chip Enable Gating
CE IN Threshold V
CE IN Pullup Current (Note 4) 3 µA CE OUT Output Voltage I
CE Propagation Delay V
CE OUT Output Short Circuit Current Output Source Current 30 mA
= 2.8V, Backup = No Connection, TA = 25°C, unless otherwise noted.
BATT
ICS
= 1.6mA, VCC = 5V 0.4 V
SINK
= 1µA, VCC = 4.25V 3.5
SOURCE
Logic High 2.0
OUT
WDI = 0V –50 –8
= 3.2mA 0.4 V
SINK
I
= 1µA 3.5
SOURCE
OUT
= –20mV, VOD = 15mV 2 µs
IN
= 20mV, VOD = 15mV 40 µs
IN
IL
V
IH
= 3.2mA 0.4 V
SINK
I
= 3.0mA V
SOURCE
I
= 1µA, VCC = 0V V
SOURCE
= 5V, CL = 20pF 20 35 ns
CC
Output Sink Current 35
450µA
30 mA
0.8 V
2.0
– 1.50
OUT
– 0.05
OUT
20 45
The denotes specifications which apply over the operating temperature range.
Note 1: Absolute maximum ratings are those values beyond which the life of device may be impaired.
Note 2: All voltage values are with respect to GND. Note 3: For military temperature range parts, consult the factory. Note 4: The input pins of PB RST, BACKUP and CE IN, have weak internal
pullups which pull to the supply when the input pins are floating. Note 5: The LTC1235 can be programmed either to provide or not to
provide battery backup power to the V power down condition of V pin which is latched internally when V threshold. If the latched logic level of the BACKUP pin is high, V
is selected by the logic level of the BACKUP
OUT
pin during power failure. The
OUT
falls through the reset voltage
CC
OUT
will be
4
in Battery Backup Mode and will be switched to V below V be in Battery Saving Mode when V
Note 6: The output pins of BATT ON, LOW LINE, PFO, WDO, RESET and RESET have weak internal pullups of typically 3µA. However, external pullup resistors may be used when higher speed is required.
Note 7: The push-button reset input requires an active low signal. Internally, this input signal is debounced and timed for a minimum of 40ms. When this condition is satisfied, the reset outputs go to the active states. The reset outputs will remain in active states for a minimum of 140ms from the moment the push-button reset input is released from logic low level.
. If the latched logic level of the BACKUP pin is low, V
BATT
falls below V
CC
when VCC falls
BATT
.
BATT
OUT
will
Page 5
TEMPERATURE (˚C)
–50
PFI INPUT THRESHOLD (V)
1.304
1.306
1.308
25 75
LTC1235 G03
1.302
1.300
–25 0
50 100 125
1.298
1.296
1.294
VCC = 5V
LPER
TIME (µs)
0
4
5
6
4
LTC1235 G09
3 2
0
2
6
1
1.315V
1.295V
12
108
V
PFI
= 20mV STEP
1816
14
VCC = 5V T
A
= 25°C
+
V
PFI
1.3V
PFO
30pF
10k
+5V
PFO OUTPUT VOLTAGE (V)
V
vs I
OUT
OUT
5.00
4.95
4.90
SLOPE = 5
4.85
OUTPUT VOLTAGE (V)
4.80
F
O
R
VCC = 5V V
BATT
= 25°C
T
A
ATYPICA
= 2.8V
UW
CCHARA TERIST
E
C
vs I
OUT
2.80
2.78
SLOPE = 125
2.76
OUTPUT VOLTAGE (V)
2.74
OUT
ICS
VCC = 0V V
BATT
T
= 25°C
A
BACKUP MODE SELECTED
LTC1235
Power Failure Input Threshold vs TemperatureV
= 2.8V
4.75 0
RESET Output Voltage vs Supply Voltage
5
TA = 25°C EXTERNAL PULLUP = 10µA V
4
3
2
RESET OUTPUT VOLTAGE (V)
1
0
0
Power Fail Comparator Response Time
6
5
4
3
2
1
PFO OUTPUT VOLTAGE (V)
0
1.305V
1.285V
10
LOAD CURRENT (mA)
= 0V
BATT
1
SUPPLY VOLTAGE (V)
V
PFI
0
123
20
2
V
PFI
1.3V
= 20mV STEP
4
TIME (µs)
30
3
+
5
PFO
VCC = 5V T
6
40
LTC1235 G01
4
LTC1235 G04
= 25°C
A
30pF
LTC1235 G07
50
5
87
2.72
232
224
216
208
200
RESET ACTIVE TIME (ms)
192
184
PFO OUTPUT VOLTAGE (V)
1.315V
1.295V
100
0
200
LOAD CURRENT (µA)
Reset Active Time vs Temperature
VCC = 5V
–50
–25 0
TEMPERATURE (°C)
50 100 125
25 75
Power Fail Comparator Response Time
6
VCC = 5V
5
= 25°C
T
A
4 3
V
= 20mV STEP
PFI
60
40
TIME (µs)
PFI
1.3V
2
1
0
V
0
20
300
10080
400
500
LTC1235 G02
Reset Voltage Threshold vs Temperature
4.66
4.65
4.64
4.63
4.62
RESET VOLTAGE THRESHOLD (V)
4.61
LTC1235 G05
4.60 –50
–25 0
TEMPERATURE (°C)
50 100 125
25 75
LTC1235 G06
Power Fail Comparator Response Time with Pullup Resistor
+
PFO
120
140
LTC1235 G08
30pF
180160
5
Page 6
LTC1235
U
U
U
PI FU CTIO S
VCC: +5V supply input. The VCC pin should be bypassed with a 0.1µF capacitor.
Backup: Logic input to control the PMOS switch, M2, when VCC is lower than V the reset voltage threshold, the status of the BACKUP pin (logic low or logic high) is latched in Memory Logic and used to turn on or off M2 when VCC is below V latched status of the BACKUP pin is high, the Memory Logic turns on M2 when VCC falls to 50mV greater than V
. If the latched status of the BACKUP pin is low, the
BATT
Memory Logic keeps M2 off even after VCC falls below V
. If the BACKUP pin is left floating it will be pulled high
BATT
by an internal pullup and the LTC1235 will provide battery backup when VCC falls.
V
: Voltage output for backed up memory. Bypass with
OUT
a capacitor of 0.1µF or greater. During normal operation, V
obtains power from VCC through an NMOS power
OUT
switch, M1, which can deliver up to 50mA and has a typical on resistance of 5. When VCC is lower than V status of the BACKUP pin stored in Memory Logic controls M2. If the status is high, the Memory Logic turns on M2 and V
is internally switched to V
OUT
status is low, the Memory Logic keeps M2 off and V in Battery Saving Mode. If V connect V
V
: Backup battery input. When VCC falls below V
BATT
OUT
to VCC.
the status of the BACKUP pin stored in the Memory Logic controls M2. If the status is high, auxiliary power, connected to V
is delivered to V
BATT
low, the Memory Logic keeps M2 off and V Saving Mode. If backup battery or auxiliary power is not used, V
should be connected to GND.
BATT
GND: Ground pin. BATT ON: Battery on logic output from comparator C2.
BATT ON goes low when V VCC. The output typically sinks 35mA and can provide base drive for an external PNP transistor to increase the output current above the 50mA rating of V high when VCC falls below V BACKUP pin stored in Memory Logic is high and V switched to V
BATT
.
. While VCC is falling through
BATT
BATT
through M2. If the
BATT
and V
OUT
through M2. If the status is
OUT
is internally connected to
OUT
, if the status of the
BATT
are not used,
BATT
is in Battery
OUT
. BATT ON goes
OUT
. If the
BATT
, the
OUT
BATT
OUT
is
,
is
PFI: Power Failure Input. PFI is the noninverting input to the Power Fail Comparator, C3. The inverting input is internally connected to a 1.3V reference. The Power Failure Output remains high when PFI is above 1.3V and goes low when PFI is below 1.3V. Connect PFI to GND or V
OUT
when
C3 is not used. PFO: Power Failure Output from C3. PFO remains high
when PFI is above 1.3V and goes low when PFI is below
1.3V. When VCC is lower than V
, C3 is shut down and
BATT
PFO is forced low. PB RST: Logic input for direct connection to a push-
button. The push-button reset input requires an active low signal. Internally, this input signal is debounced and timed for a minimum of 40ms. When this condition is satisfied, the reset pulse generator forces RESET to active low. The RESET signal will remain active low for a minimum of 140ms from the moment the push-button reset input is released from logic low level.
RESET: Logic output for µP reset control. The LTC1235 provides three ways to generate µP reset. First, whenever VCC falls below either the reset voltage threshold (4.65V, typically) or V
, RESET goes active low. After V
BATT
CC
returns to 5V, the reset pulse generator forces RESET to remain active low for a minimum of 140ms. Second, when the watchdog timer is enabled but not serviced prior to the time-out period, the reset pulse generator also forces RESET to active low for a minimum of 140ms for every time-out period (see Figure 11). Third, when the PB RST pin stays active low for a minimum of 40ms, RESET is forced low by reset pulse generator. The RESET signal will remain active low for a minimum of 140ms from the moment the push-button reset input is released from logic low level.
RESET: RESET is an active high logic output. It is the inverse of RESET.
LOW LINE: Logic output from comparator C1. LOW LINE indicates a low line condition at the VCC input. When V
CC
falls below the reset voltage threshold (4.65V typically), LOW LINE goes low. As soon as VCC rises above the reset voltage threshold, LOW LINE returns high (see Figure 1). LOW LINE goes low when V
drops below V
CC
BATT
(see
Table 1).
6
Page 7
LTC1235
U
U
U
PI FU CTIO S
WDI: Watchdog Input, WDI, is a three level input. Driving WDI either high or low for longer than the watchdog time­out period, forces both RESET and WDO low. Floating WDI disables the Watchdog Timer. The timer resets itself with each transition of the Watchdog Input (see Figure 11).
WDO: Watchdog logic output. When the watchdog input remains either high or low for longer than the watchdog time-out period, WDO goes low. WDO is set high whenever there is a transition on the WDI pin, or LOW LINE goes low. The watchdog timer can be disabled by floating WDI (see Figure 11).
W
BLOCK
IDAGRA
V
BATT
V
CC
BACKUP
C2
+
CE IN: Logic input to the Chip Enable gating circuit. CE IN can be derived from microprocessor's address line and/or decoder output. See Applications Information Section and Figure 6 for additional information.
CE OUT: Logic output from the Chip Enable gating circuit. When VCC is above the reset voltage threshold, CE OUT is a buffered replica of CE IN. When VCC is below the reset voltage threshold CE OUT is forced high (see Figure 6).
MEMORY
LOGIC
M2
M1
CHARGE
PUMP
V
OUT
BATT ON
CE IN
PFI
PB RST
WDI
1.3V
GND
LEVEL SENSE
AND
DEBOUNCE
TRANSITION
DETECTOR
LOW LINE
+
C1
+
OSC
RESET PULSE
GENERATOR
WATCHDOG
TIMER
CE OUT
PFO
RESET
RESET
WDO
LTC1235 BD
7
Page 8
LTC1235
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
Power Monitoring
The LTC1235 uses a bandgap voltage reference and a precision voltage comparator C1 to monitor the 5V supply input on VCC (see BLOCK DIAGRAM). When VCC falls below the reset voltage threshold, the reset outputs are forced to active states. The reset voltage threshold ac­counts for a 5% variation on VCC, so the reset outputs become active when VCC falls below 4.75V (4.65V typical). On power-up, the reset signals are held active states for a minimum of 140ms after the reset voltage threshold is reached to allow the power supply and microprocessor to stabilize. On power-down, the RESET signal remains ac­tive low even with VCC as low as 1V. This capability helps hold the microprocessor in stable shutdown condition. Figure 1 shows the timing diagram of the RESET signal.
The precision voltage comparator, C1, typically has 40mV of hysteresis which ensures that glitches at VCC pin do not activate the reset outputs. Response time is typically 10µ s.
To help prevent mistriggering due to transient loads, V
CC
pin should be bypassed with a 0.1µF capacitor with the leads trimmed as short as possible.
LOW LINE is the output of the precision voltage compara­tor C1. When VCC falls below the reset voltage threshold, LOW LINE goes low. LOW LINE returns high as soon as VCC rises above the reset voltage threshold.
Push-Button Reset
The LTC1235 provides an logic input pin for direct connection to a push-button. The push-button reset input, PB RST, requires an active low signal. Internally, this input signal is debounced and timed for a minimum of 40ms. When this condition is satisfied, the reset pulse generator forces the reset outputs to active states. The reset signals will remain in active states for a minimum of 140ms from the moment the push-button reset input is released from logic low level (Figure 2).
V
RESET
LOW LINE
V2
V1 = RESET VOLTAGE THRESHOLD V2 = RESET VOLTAGE THRESHOLD + RESET THRESHOLD HYSTERESIS
t1
t1 = RESET ACTIVE TIME
LOGIC
HIGH
t2
LOGIC HIGH
LOGIC LOW
V1
LTC1235 F01
= 5V
V
CC
PB RST
RESET
RESET
V2
t1
LOGIC LOW
CC
V1
Figure 1. Reset Active Time
t1
t1 = PUSH-BUTTON RESET LOW TIME t2 = RESET ACTIVE TIME
8
Figure 2. Push-Button Reset
Page 9
LTC1235
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
Voltage Output
During normal operation, the LTC1235 uses a charge pumped NMOS power switch to achieve low dropout and low supply current. This power switch can deliver up to 50mA to V 5. The V
from VCC and has a typical on resistance of
OUT
pin should be bypassed with a capacitor of
OUT
0.1µ F or greater to ensure stability. Use of a larger bypass capacitor is advantageous for supplying current to heavy transient loads.
When operating currents larger than 50mA are required from V
, or a lower dropout (VCC - V
OUT
voltage differ-
OUT
ential) is desired, the LTC1235 provides BATT ON output to drive the base of external PNP transistor (Figure 3). Another alternative to provide higher current is to connect a high current Schottky diode from the VCC pin to the V
OUT
pin to supply the extra current.
ANY PNP POWER TRANSISTOR
R1
+5V
0.1µF
+3V
Figure 3. Using BATT ON to Drive External PNP Transistor
V
CC
LTC1235
V
BATT
BATT ON
GND
V
OUT
0.1µF
LTC1235 F03
The LTC1235 is protected for safe area operation with short circuit limit. Output current is limited to approxi­mately 200mA. If the device is overloaded for a long period of time, thermal shutdown turns the power switch off until the device cools down. The threshold temperature for thermal shutdown is approximately 155°C with about 10°C of hysteresis which prevents the device from oscil­lating in and out of shutdown.
The PNP switch was not chosen for the internal power switch because it injects unwanted current into the sub­strate. This current is collected by the V
pin in com-
BATT
petitive devices and adds to the charging current of the battery which can damage lithium batteries. LTC1235
uses a charge pumped NMOS power switch to eliminate unwanted charging current while achieving low dropout and low supply current. Since no current goes to the substrate, the current collected by V
pin is strictly
BATT
junction leakage.
Conditional Battery Backup
LTC1235 provides an unique feature to either allow V to be switched to V
or to disable the CMOS RAM
BATT
OUT
battery backup function when primary power is lost. Disabling the battery backup function is useful in conserv­ing the backup battery's life when the SRAM doesn't need battery backup during long term storage of a computer system, or delivery of the computer system to the end user.
The BACKUP pin (Pin 8) is used to serve this feature on power-down. When VCC is falling through the reset voltage threshold, the status of the BACKUP pin (logic low or logic high) is stored in the Memory Logic (see BLOCK DIA­GRAM). If the stored status is logic high and VCC fall to 50mV greater than V connects the V
BATT
input to V
, a 125 PMOS switch, M2,
BATT
and the battery switchover
OUT
comparator, C2, shuts off the NMOS power switch, M1. M2 is designed for very low dropout voltage (input-to­output differential). This feature is advantageous for low current applications such as battery backup in CMOS RAM and other low power CMOS circuitry. If the stored status is logic low and VCC falls to 50mV greater than V Memory Logic keeps M2 off and C2 shuts off M1. V
BATT
, the
OUT
is
in Battery Saving Mode (see Figure 4). The supply current in both mode is 1µA maximum.
On power-ups, C2 keeps M1 off before VCC reaches 70mV higher than V
. On the first power-up after the battery
BATT
is replaced (with power off), the status stored in the Memory Logic is undetermined. V
could be either in
OUT
Battery Backup Mode or in Battery Saving Mode. When VCC is 70mV greater than V
, M1 connects V
BATT
OUT
to VCC. C2 has typically 20mV of hysteresis to prevent spurious switching when VCC remains nearly equal to V
BATT
and the
status stored in the Memory Logic is high. The response time of C2 is approximately 20µs.
9
Page 10
LTC1235
CT
1A
V–V
EXT REQ'D
CC BATT
µ
 
 
PPLICATI
A
BACKUP
V
CC
V
OUT
BACKUP
V
CC
V
OUT
U
O
S
I FOR ATIO
V
IN BATTERY SAVING MODE
OUT
LOGIC LOW
RESET VOLTAGE THRESHOLD
V
BATT
Hi-Z
V
IN BATTERY BACKUP MODE
OUT
LOGIC HIGH
RESET VOLTAGE THRESHOLD
V
BATT
WU
V
= V
OUT
U
BATT
LTC1235 F04
Replacing the Backup Battery with Power On
When changing the backup battery with system power on, spurious resets can occur while battery is removed due to battery standby current. Although battery standby current is only a tiny leakage current, it can still charge up the stray capacitance on the V follows: When V
BATT
pin. The oscillation cycle is as
BATT
reaches within 50mV of VCC, the LTC1235 switches to battery backup or battery saving mode. In either case, the battery supply current pulls V
low and the device goes back to normal operation.
BATT
The leakage current then charges up the V
pin again
BATT
and the cycle repeats. If spurious resets during battery replacement pose no
problems, then no action is required. Otherwise, two methods can be used to eliminate this problem. First, a capacitor from V
to GND will allow time for battery
BATT
replacement by slowing the charge rate. For example, the battery standby current is 1µA maximum over tempera- ture and the external capacitor required to slow the charge rate is:
Figure 4. Conditional Battery Backup Operation
The operating voltage at the V
pin ranges from 2.0V to
BATT
4.25V. High value capacitors, such as electrolytic or farad­size double layer capacitors, can be used for short term memory backup instead of a battery. For capacitor backup, see Typical Applications. The charging resistor for re­charging rechargeable batteries should be connected to V
through a diode since this eliminates the discharge
OUT
path that exists when V
collapses and RAM is not backed
CC
up (Figure 5).
V
– V
BATT
R
R
V
CC
LTC1235
V
BATT
– V
BACKUP
GND
4
D
1N4148
V
OUT
RAM
0.1µF
I/O LINE
µP
LTC1235 F05
OUT
OUT
I =
+5V
0.1µF
+3V
Figure 5. Charging External Battery Through V
where T backup battery. With VCC = 4.5V, V
is the maximum time required to replace the
REQ'D
= 3V and T
BATT
REQ'D
=
3 sec, the value for external capacitor is 2µF. Second, a resistor from V
to GND will hold the pin low while
BATT
changing the battery. For example, the battery standby current is 1µA maximum over temperature and the exter­nal resistor required to hold V
V – 50mV
CC
R
1A
µ
below VCC is:
BATT
With VCC = 4.5V, a 4.3M resistor will work. With a 3V battery, this resistor will draw only 0.7µA from the battery, which is negligible in most cases.
If the battery connections are made with long wires or PC traces, inductive spikes can be generated during battery replacement. Even if a resistor is used to prevent spurious resets as described above, these spikes can take the V
BATT
pin below GND violating the LTC1235 absolute maximum ratings. A 0.1µF capacitor from V
to GND is recom-
BATT
mended to eliminate these potential spikes when battery replacement is made through long wires.
10
Page 11
LTC1235
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
Table 1 shows the state of each pin during battery backup. If the backup battery is not used, connect V and V
Table 1. Input and Output Status in Battery Backup Mode
SIGNAL STATUS
V
CC
BACKUP BACKUP is ignored. V
OUT
V
BATT
BATT ON Logic high. The open circuit output voltage is equal to V PFI Power Failure Input is ignored. PFO Logic low PB RST PB RST is ignored. RESET Logic low RESET Logic high. The open circuit output voltage is equal to V LOW LINE Logic low WDI Watchdog Input is ignored. WDO Logic high. The open circuit output voltage is equal to V CE IN Chip Enable Input is ignored. CE OUT Logic high. The open circuit output voltage is equal to V
to VCC.
OUT
C2 monitors VCC for active switchover.
V
is connected to V
OUT
The supply current is 1µA maximum.
BATT
through an internal PMOS switch.
BATT
to GND
.
OUT
.
OUT
.
OUT
.
OUT
IN and CE OUT, control the Chip Enable or Write inputs of CMOS RAM. When VCC is +5V, CE OUT follows CE IN with a typical propagation delay of 20ns. When VCC falls below the reset voltage threshold or V
, CE OUT is forced
BATT
high, independent of CE IN. CE OUT is an alternative signal to drive the CE, CS, or Write input of battery-backed up CMOS RAM. CE OUT can also be used to drive the Store or Write input of an EEPROM, EAROM or NOVRAM to achieve similar protection. Figure 6 shows the timing diagram of CE IN and CE OUT.
CE IN can be derived from the microprocessor’s address decoder output. Figure 7 shows a typical nonvolatile CMOS RAM application.
V
+5V
0.1µF
+3V
V
CC
BATT
GND
LTC1235
CE OUT
BACKUP
RESET
V
OUT
CE IN
+
10µF
20ns PROPAGATION DELAY
FROM DECODER
TO µP
0.1µF
V
CS
CC
62512
RAM
GND
LTC1235 F06
Memory Protection
The LTC1235 includes memory protection circuitry which ensures the integrity of the data in memory by preventing write operations when VCC is at invalid level. Two pins, CE
BACKUP = V
CE OUT
V
CE IN
CC
CC
V
= V
OUT
BATT
V1
Figure 6. Timing Diagram for CE IN and CE OUT
Figure 7. A Typical Nonvolatile CMOS RAM Application
V2
V1 = RESET VOLTAGE THRESHOLD V2 = RESET VOLTAGE THRESHOLD + RESET THRESHOLD HYSTERESIS
V
= V
OUT
BATT
LTC1235 F06
11
Page 12
LTC1235
10µF
100µF
V
IN
V
OUT
ADJ
LTC1235 F07
V
CC
0.1µF
TO µP
GND
PFO
LT1086-5
V
IN
7.5V
R4 10k
PFI
LTC1235
R1 51k
R2 10k
R3
300k
+ +
+5V
BACKUP
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
Power Fail Warning
The LTC1235 generates a Power Failure Output (PFO) for early warning of failure in the microprocessor's power supply. This is accomplished by comparing the Power Failure Input (PFI) with an internal 1.3V reference. PFO goes low when the voltage at PFI pin is less than 1.3V. Typically PFI is driven by an external voltage divider (R1 and R2 in Figures 8 and 9) which senses either an unregulated DC input or a regulated 5V output. The voltage divider ratio can be chosen such that the voltage at PFI pin falls below 1.3V several milliseconds before the +5V supply falls below the maximum reset voltage threshold
4.75V. PFO is normally used to interrupt the microproces­sor to execute shut-down procedure between PFO and RESET or RESET.
The power fail comparator, C3, does not have hysteresis. Hysteresis can be added however, by connecting a resis­tor between the PFO output and the noninverting PFI input pin as shown in Figures 8 and 9. The upper and lower trip points in the comparator are established as follows:
When PFO output is low, R3 sinks current from the summing junction at the PFI pin.
V5V
HYSTERESIS
R1
==
850mV
R3
R3 5.88 R1
Choose R3 = 300k and R1 = 51k. Also select R4 = 10k which is much smaller than R3.
7.5V =1.3V 1+
51k
R2
(5V –1.3V)51k
ΩΩ
1.3V(310k )
 
R2 = 9.7k, Choose nearest 5% resistor 10k and recalcu­late VL,
51k
V 1.3V 1
=+
L
V 1.3V 1
=++
H
(7.32V – 6.25V)
10k
51k
10k
10.7ms=
(5V –1.3V)51k
1.3V(310k
51k
=
300k
=
)
8.151V
7.32V
100mV/ms
V
HYSTERESIS
= 8.151V – 7.32V = 831mV
When PFO output is high, the series combination of R3 and R4 source current into the PFI summing junction.
Example 1: The circuit in Figure 8 demonstrates the use of the power fail comparator to monitor the unregulated power supply input. Assuming the the rate of decay of the supply input VIN is 100mV/ms and the total time to execute a shut-down procedure is 8ms. Also the noise of VIN is 200mV. With these assumptions in mind, we can reason­ably set VL = 7.5V which 1.25V greater than the sum of maximum reset voltage threshold and the dropout voltage of LT1086-5 (4.75V + 1.5V) and V
12
V =1.3V 1+
H
V 1.3V 1
=+
L
R1R2R1
R1
R2
Assuming R4«R3,V 5V
+
R3
(5V –1.3V)R1
1.3V(R3 R4)
HYSTERESIS
+
=
HYSTERESIS
 
R1 R3
= 850mV.
Figure 8. Monitoring LTC1235 Power Fail Comparator
V
IN
+
LT1086-5
6.5V
10µF
Figure 9. Monitoring Power Fail Comparator
V
V
OUT
IN
ADJ
10µF
+
Unregulated
R1 27k
R2
8.2k
R5
3.3k
Regulated
DC Supply with the
+5V
R3
2.7M
0.1µF V
R4
10k
DC Supply with the LTC1235
CC
PFO
PFI
LTC1235
BACKUP GND
TO µP
LTC1235 F08
Page 13
LTC1235
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
The 10.7ms allows enough time to execute shut-down procedure for microprocessor and 831mV of hysteresis would prevent PFO from going low due to the noise of VIN.
Example 2: The circuit in Figure 9 can be used to measure the regulated 5V supply to provide early warning of power failure. Because of variations in the PFI threshold, this circuit requires adjustment to ensure that the PFI com­parator trips before the reset threshold is reached. Adjust R5 such that the PFO output goes low when the VCC supply reaches the desired level (e.g., 4.85V).
Monitoring the Status of the Battery
C3 can also monitor the status of the memory backup battery (Figure 10). If desired, the CE OUT can be used to apply a test load to the battery. Since CE OUT is forced high in battery backup mode, the test load will not be applied to the battery while it is in use, even if the microprocessor is not powered.
watchdog time-out period and reset active time. The watchdog time-out period is restarted as soon as the reset outputs are inactive. When either a high-to-low or low-to­high transition occurs at the WDI pin prior to time-out, the watchdog time is reset and begins to time out again. To ensure the watchdog time does not time out, either a high­to-low or low-to-high transition on the WDI pin must occur at or less than the minimum time-out period. If the input to the WDI pin remains either high or low, reset pulses will be issued every 1.6 seconds typically. The watchdog timer can be deactivated by floating the WDI pin. The timer is also disabled when VCC falls below the reset voltage threshold or V
BATT
.
The Watchdog Output, WDO, goes low if the watchdog timer is allowed to time out and remains low until set high by the next transition on the WDI pin. WDO is also set high when VCC falls below the reset voltage threshold or V
+5V
BATT
.
Watchdog Timer
The LTC1235 provides a watchdog timer function to monitor the activity of the microprocessor. If the micro­processor does not toggle the Watchdog Input (WDI) within the time-out period, the reset outputs are forced to active states for a minimum of 140ms. The watchdog time-out period is fixed at 1.0 second minimum on the LTC1235. This time-out period provides adequate time for many systems to service the watchdog timer immediately after a reset. Figure 11 shows the timing diagram of
V
= 5V
CC
WDI
WDO
t2
V
V
BATT
CC
R1 1M
+3V
Figure 10. Backup Battery Monitor with Optional Test Load
t1 = RESET ACTIVE TIME t2 = WATCHDOG TIME-OUT PERIOD
R2 1M
RL 20K
OPTIONAL TEST LOAD
t2
PFI
PFI
CE OUT
LTC1235
PFO
BACKUP
CE IN
GND
LOW BATTERY SIGNAL TO µP I/O PIN
TO µP I/O PIN
}
LTC1235 F09
RESET
t1
Figure 11. Watchdog Time-out Period and Reset Active Time
t1
t1
LTC1235 F11
13
Page 14
LTC1235
10µF
V
BATT
V
CC
LTC1235
V
OUT
GND
LTC1235 TA4
V
CC
LOW LINE
CE IN
CE OUT
0.1µF
CS
20ns PROPAGA- TION DELAY
62512 RAM
A
+5V
+3V
0.1µF
+
V
CC
62128 RAM
C
V
CC
CS
2
62128
RAM
B
CS
A
CS
B
CS
C
CS
1
CS
1
OPTIONAL CONNECTION FOR ADDITIONAL RAMs
CS
2
0.1µF
0.1µF
µP
SYSTEM
BACKUP
Capacitor Backup with 74HC4016 Switch Write Protect for Additional RAMs
R1 10k
1
R2 30k
PPLICATITYPICAL
74HC4016
7
0.1µF
14121110
13
100µF
+5V
2
U
O
SA
V
CC
V
BATT
+
LTC1235
LOW LINE
GND
V
OUT
0.1µF
LTC1235 TA3
14
Page 15
PACKAGE DESCRIPTIO
U
Dimensions in inches (millimeters) unless otherwise noted.
N Package
16-Lead Plastic DIP
0.770
(19.558)
0.260 ± 0.010
(6.604 ± 0.254)
12
16
15
2
1
1314
456
3
11
7
910
8
LTC1235
0.300 – 0.325
(7.620 – 8.255)
0.009 - 0.015
(0.229 - 0.381)
+0.025
0.325 –0.015
+0.635
8.255
()
–0.381
0.015
(0.381)
MIN
0.130 ± 0.005
(3.302 ± 0.127)
0.125
(3.175)
MIN
SEE NOTE
0.045 ± 0.015
(1.143 ± 0.381)
0.100 ± 0.010
(2.540 ± 0.254)
SO Package
16-Lead SOIC
(10.109 – 10.490)
15 141312
16
0.045 – 0.065
(1.143 – 1.651)
0.398 – 0.413
0.065
(1.651)
TYP
0.018 ± 0.003
(0.457 ± 0.076)
N16 1291
10 9
11
0.394 – 0.419
(10.008 – 10.643)
2345678
0.050
(1.270)
TYP
1
0.014 – 0.019
(0.356 – 0.483)
TYP
0.291 – 0.299
0.005
(0.127)
RAD MIN
0.009 – 0.013
(0.229 – 0.330)
NOTE: PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS. THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS.
(7.391 – 7.595)
0.010 – 0.029
(0.254 – 0.737)
SEE NOTE
× 45°
0° – 8° TYP
0.016 – 0.050
(0.406 – 1.270)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of circuits as described herein will not infringe on existing patent rights.
0.093 – 0.104
(2.362 – 2.642)
0.037 – 0.045
(0.940 – 1.143)
0.004 – 0.012
(0.102 – 0.305)
SOL16 12/91
15
Page 16
LTC1235
U.S. Area Sales Offices
NORTHEAST REGION CENTRAL REGION NORTHWEST REGION Linear Technology Corporation Linear Technology Corporation Linear Technology Corporation
One Oxford Valley Chesapeake Square 782 Sycamore Dr. 2300 E. Lincoln Hwy.,Suite 306 229 Mitchell Court, Suite A-25 Milpitas, CA 95035 Langhorne, PA 19047 Addison, IL 60101 Phone: (408) 244-2050 Phone: (215) 757-8578 Phone: (708) 620-6910 FAX: (408) 432-6331 FAX: (215) 757-5631 FAX: (708) 620-6977
SOUTHEAST REGION SOUTHWEST REGION Linear Technology Corporation Linear Technology Corporation
17060 Dallas Parkway 22141 Ventura Blvd. Suite 208 Suite 206 Dallas, TX 75248 Woodland Hills, CA 91364 Phone: (214) 733-3071 Phone: (818) 703-0835 FAX: (214) 380-5138 FAX: (818) 703-0517
International Sales Offices
FRANCE KOREA UNITED KINGDOM Linear Technology S.A.R.L. Linear Technology Korea Branch Linear Technology (UK) Ltd.
"Le Quartz" Namsong Building, #505 The Coliseum, Riverside Way 58 Chemin de la Justice Itaewon-Dong 260-199 Camberley, Surrey GU15 3YL 92290 Chatenay Mallabry Yongsan-Ku, Seoul United Kingdom France Korea Phone: 011-44-276-677676 Phone: 33-1-46316161 (170) Phone: 82-2-792-1617 FAX: 011-44-276-64851 FAX: 33-1-46314613 FAX: 82-2-792-1619
JAPAN TAIWAN GERMANY Linear Technology KK Linear Technology Corporation Linear Technology GMBH
4F Ichihashi Building Rm. 801, No. 46, Sec. 2 Untere Hauptstr. 9 1-8-4 Kudankita Chiyoda-Ku Chung Shan N. Rd. D-8057 Eching Tokoyo, 102 Japan Taipei, Taiwan, R.O.C. Germany Phone: 81-3-3237-7891 Phone: 886-2-521-7575 Phone: 49-89-3195023 FAX: 81-3-3237-8010 FAX: 886-2-521-7575 Telex: 17-897457
FAX: 49-89-3194821
SINGAPORE Linear Technology PTE. LTD.
101 Boon Keng Road #02-15 Kallang Ind. Estates Singapore 1233 Phone: 65-293-5322 FAX: 65-292-0398
World Headquarters
Linear Technology Corporation
1630 McCarthy Blvd. Milpitas, CA 95035-7487 Phone: (408) 432-1900 FAX: (408) 434-0507
01/21/92
16
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900
FAX
: (408) 434-0507
TELEX
: 499-3977
LT/GP 0192 10K REV 0
LINEAR TECHNOLOGY CORPORATION 1992
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