Datasheet LT1684 Datasheet (Linear Technology)

Page 1
FEATURES
Allows Dynamic Control of Output Frequency, Cadence, Amplitude and DC Offset
Active Tracking Supply Configuration Allows Linear Generation of Ring Tone Signal
No High Voltage Post-Filtering Required
Capacitive Isolation Eliminates Optocouplers
Low Distortion Output Meets International PTT Requirements
Differential Input Signal for Noise Immunity
User Adjustable Active Output Current Limit
Powered Directly From High Voltage Ringer Supply—No Additional Supplies Necessary
Supply Current: <1mA
2% Signal Amplitude Reference
Available in 14-Pin SO and DIP Packages
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APPLICATIO S
Wireless Local Loop Telephones
Key System/PBX Equipment
Fiber to the Curb Telecom Equipment
LT1684
Micropower
Ring Tone Generator
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DESCRIPTIO
The LT®1684 is a telecommunication ring tone generator. The IC takes a user-generated pulse width modulated (PWM) input and converts it to a high voltage sine wave suitable for telephone ringing applications.
The LT1684 receives capacitor-isolated differential PWM input signals encoded with desired ring output cadence, frequency, and amplitude information. The LT1684 nor­malizes the pulse amplitude to ±1.25V for an accurate signal voltage reference. The cadence, frequency and amplitude information is extracted using a multiple­pole active filter/amplifier, producing the output ring tone signal.
The LT1684 uses its own ring tone output as a reference for generating local supply rails using complementary high voltage external MOSFETs as dynamic level-shifting devices. This “active tracking” supply mode of operation allows linear generation of the high voltage ring tone signal, reducing the need for large high voltage filtering elements.
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
1µF
ISOLATION
100pF
100pF
3k
2k
300k
DC
10k
10k
4700pF
PWM
CONTROLLER
P1
µC
P2
FB1: FERRONICS FMB1601 (716) 388-1020
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5k
Electrically Isolated Ring Tone Generator
6.8nF
1N4001
1N5817
6.8nF
IN A GATE
IN B
LT1684
LIM
OUT
OUT
AT
COMP1
COMP2
GATE
BG
AMPIN LIM
REF
+
FB1
+
V
+
100pF
20pF
– –
V
100k
100
100
100k
IRF610
0.1µF
IRF9610
100V
+
RING TONE
OUTPUT
–100V
1684 TA01
±100mA
()
CAPABILITY
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LT1684
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ABSOLUTE AXI U RATI GS
(Note 1)
Voltages:
Active Tracking Differential Voltage
(GATE+ – GATE–)..................................–0.3V to 42V
Local Supply Differential Voltage
(V+ – V–)...............................................–0.3V to 36V
Local Supply
Voltage V
+
..............
(GATE+ – 7.0V) to (GATE+ + 0.3V)
Local Supply
Voltage V
..............
(GATE– – 0.3V) to (GATE– + 7.0V)
PWM Input Differential Voltage
(IN A – IN B).........................................–7.0V to 7.0V
PWM Input Voltage
Common Mode................. (V– – 0.3V) to (V+ + 0.3V)
LIM+ Current Limit
Pin Voltage ..................... (OUT – 0.3V) to (V+ + 0.3V)
LIM– Current Limit
Pin Voltage .................... (V– – 0.3V) to (OUT + 0.3V)
All Other Pin Voltages ........... (V– – 0.3V) to (V+ + 0.3V)
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PACKAGE/ORDER I FOR ATIO
Currents:
LIM+, LIM– Current.......................................... –350mA
OUT Current ....................................................... 350mA
BG
Current .................................................... ±10mA
OUT
PWM (IN A, IN B) Current .................................... ±5mA
GATE+, GATE– Current .......................................±20mA
COMP1 Current .................................................... ±1mA
COMP2 Current .................................................... ±1mA
AT
Current ..................................................... ±20mA
REF
Temperatures:
Operating Junction Temperature Range
Commercial Grade................................. 0°C to 125°C
Industrial Grade................................ –40°C to 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec)..................300°C
TOP VIEW
1
IN B
2
COMP1
3
COMP2
4
LIM
5
V
6
GATE
7
AT
REF
N PACKAGE
14-LEAD PDIP
T
= 125°C, θ
JMAX
= 125°C, θ
T
JMAX
Consult factory for Military grade parts.
JA
JA
IN A
14
BG
13
OUT
AMPIN
12
+
GATE
11
+
V
10
+
LIM
9
OUT
8
S PACKAGE
14-LEAD PLASTIC SO
= 75°C/W (N)
= 115°C/W (S)
ORDER PART
NUMBER
LT1684CN LT1684CS LT1684IN LT1684IS
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LT1684
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. V+ – V– = 20V, Voltages referenced to pin OUT, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supply and Protection
I
S
|V+| Local Supply Voltages V |V–|V
V
GATE
V
GATE
PWM Receiver
f
PWM
V
IN
R
IN
R
INA,INB
BG Buffer
V
BGOUT
V
BGOUTOS
I
BGOUTSC
R
BGOUT
t
r
t
f
t
r-f
t
pr
t
pf
t
p
Output Amplifier
V
OUTOS
R
OUT
I
OUTSC
DC Supply Current (Note 2) IN A – IN B 1.6V 680 950 µA
+ Active Tracking Supply FET I
Bias Voltage AT
Active Tracking Supply FET I
Bias Voltage AT
Input Carrier Frequency 10 kHz Minimum Valid Differential Input IN A – IN B or IN B – IN A 1.6 V Differential Input Threshold 0.50 0.70 1.00 V
| IN A – IN B | Differential Input Overdrive Impedance VIN > VTH + 100mV 710 k
(Note 3, 5) Single-Ended Input Impedance To Pin OUT 50 k
(Note 5)
BG
Normalized Voltage Magnitude |V
OUT
Output Offset Voltage –7 7 mV [(V
+) + (V
BGOUT
BG
Short-Circuit Current ±2 ±4.5 mA
OUT
BG
Output Impedance –2mA ≤ I
OUT
BG
Rise Time (10% to 90%) R
OUT
BG
Fall Time (10% to 90%) R
OUT
BG
RiseTime – Fall Time –200 –100 0 ns
OUT
BG
Propagation Delay PWM Input R
OUT
–)]/2 –10 10 mV
BGOUT
Transition to 10% Output (Rising Edge) BG
Propagation Delay PWM Input R
OUT
Transition to 90% Output (Falling Edge) BG
Propagation Delay – 200 –100 100 ns
OUT
Rising Edge – Falling Edge
OUT Offset Voltage V
OUT Output Impedance –10mA ≥ I
OUT Short-Circuit Current LIM+ Shorted to OUT ±100 ±190 mA
= V
OUT
GATE GATE
+ = –100µA, 13.2 14.0 14.8 V
GATE
REF
– = 100µA, –14.8 –14.0 –13.2 V
GATE
REF
= 5k, C
OUT
= 5k, C
OUT
= 5k, C
OUT
= 5k, C
OUT
AMPIN
R
AMPIN
10mA ≤ I
LIM– Shorted to V
unless otherwise noted.
ATREF
+
+ ≥ V≤ V
6.5 10 V
= 0V
= 0V
| 1.235 1.250 1.265 V
BGOUT
2mA 0.2
BGOUT
= 10pF 160 300 ns
OUT
= 10pF 260 400 ns
OUT
= 10pF 340 500 ns
OUT
= 10pF 440 600 ns
OUT
= 0v, I
= 0A – 6 6 mV
OUT
1.225 1.250 1.275 V
= 10k (Note 4) –8 8 mV
+ –100mA, LIM+ Shorted to OUT 0.01
LIM
100mA, LIM– Shorted to V
OUT
0.15
Note 1: Absolute Maximum Ratings are those values beyond which the life of the device may be impaired.
Note 2: IC Supply current specification represents unloaded condition and does not include external FET gate pull up/down currents (GATE
+
, GATE
pins). Actual total IC bias currents will be higher and vary with operating conditions. See Applications Information.
Note 3: PWM inputs are high impedance through ±100mV beyond the input thresholds.
Note 4: 10k resistor from pin AMPIN to ground. Note 5: Guaranteed but not tested.
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LT1684
I
GATE
(mA)
0.1 0.3 1.0 3.0 10.0
V
GATE
– V
ATREF
(V)
1684 G03
14.3
14.2
14.1
14.0
13.9
13.8
TJ = 25°C
TEMPERATURE (°C)
–50 –25 0 25 50 75 100 125
V
BGOUT
(V)
1684 G06
1.253
1.252
1.251
1.250
1.249
1.248
1.247
1.246
1.245
R
LIM
()
0 21 4 6 83 5 7 910
OUTPUT CURRENT LIMIT (mA)
1684 G09
200
150
100
50
0
TYPICAL (TJ = 25°C)
MINIMUM (TJ = 125°C)
UW
TYPICAL PERFOR A CE CHARACTERISTICS
DC Supply Current vs V+ – V
740
TJ = 25°C
720
700
680
660
640
DC SUPPLY CURRENT (µA)
620
600
14 16 18 20 22 24
V
GATE
IN A – IN B 1.6V
IN A – IN B –1.6V
– V
ATREF
V+ – V– (V)
Voltage
Magnitudes vs Temperature
14.5 I
= 1mA
GATE
14.4
14.3
14.2
(V)
14.1
ATREF
14.0
– V
13.9
GATE
13.8
V
13.7
13.6
13.5
–50 –25 0 25 50 75 100 125
TEMPERATURE (°C)
1684 G01
DC Supply Current vs Temperature
710
690
670
650
630
IN A – IN B –1.6V
610
590
DC SUPPLY CURRENT (µA)
570
550
–50 –25 0 25 50 75 100 125
TEMPERATURE (°C)
IN A – IN B 1.6V
PWM Input Thresholds vs Temperature V
0.85
0.80
0.75
0.70
0.65
0.60
IN A – IN B (V)
0.55
0.50
0.45 –50 –25 0 25 50 75 100 125
1684 G04
TEMPERATURE (°C)
1684 G02
1684 G05
V
– V
GATE
Magnitudes vs I
BGOUT
Voltage
ATREF
GATE
Magnitude vs Temperature
PWM Buffer (Pin BG Limit vs Temperature
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
PWM BUFFER CURRENT LIMIT (mA)
2.0 –50 –25 0 25 50 75 100 125
TEMPERATURE (°C)
4
OUT
) Current
1684 G07
Output Amplifier Current Limit vs Temperature (R
250
225
200
175
150
OUTPUT CURRENT LIMIT (mA)
125
100
–50 –25 0 25 50 75 100 125
TEMPERATURE (°C)
LIM
= 0Ω)
Output Amplifier Current Limit vs External Limiting Resistor Values
1684 G08
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LT1684
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PI FU CTIO S
IN B (Pin 1): PWM Negative Input. Input is isolated from digital source by ~100pF series capacitor. A 10k resistor can be connected to the IN B pin in series with the isolation capacitor for transient protection. The PWM receiver imple­ments a diode forward drop of input hysteresis (relative to IN A). This hysteresis and internal signal limiting assure common mode glitch rejection with isolation capacitor mismatches up to 2:1. For maximum performance, how­ever, effort should be made to match the two PWM input isolation capacitors. Pin IN B is differentially clamped to pin IN A through back-to-back diodes. This results in a high impedance differential input through ±100mV be­yond the input thresholds. 5k internal input resistors yield a 10k (nominal) differential overdrive impedance.
COMP1 (Pin 2): Output Amplifier Primary Compensation. Connect a 100pF capacitor from pin COMP1 to pin OUT.
COMP2 (Pin 3): Output Amplifier Secondary Compensa­tion. Connect a 20pF capacitor from pin COMP2 to pin OUT.
LIM– (Pin 4): Output Amplifier Current Sink Limit. Pin implements I resistor has a typical value of 3.5. For maximum current drive capability (190mA typical) short pin to pin V–. Reduction of current sink capability is achieved by placing additional resistance from pin LIM– to pin V–. (i.e. An external 3.5 resistance from pin LIM– to pin V– will reduce the current sinking capability of the output ampli­fier by approximately 50%.)
V– (Pin 5): Local Negative Supply. Typically connected to the source of the active tracking supply P-channel MOSFET. V– rail voltage is GATE– self-bias voltage less the MOSFET VGS. Typical P-channel MOSFET characteristics provide AT
– V– 10V.
REF
GATE– (Pin 6): Negative Power Supply FET Gate Drive. Pin sources current from pull-down resistor to bias gate of active tracking supply P-channel MOSFET. Self-biases to a typical value of –14V, referenced to pin AT resistor value is determined such that current sourced from the GATE– pin remains greater than 50µA at mini- mum output signal voltage and less than 10mA at maxi­mum output signal voltage.
• R = VBE current clamp. Internal clamp
OUT
. Pull-down
REF
AT
(Pin 7): Active Tracking Supply Reference. Typi-
REF
cally connected to pin OUT. Pin bias current is the differ­ence between the magnitudes of GATE+ pin bias and GATE– pin bias (I
OUT (Pin 8): Ring Tone Output Pin. Output of active filter amplifier/buffer. Used as reference voltage for internal functions of IC. Usually shorted to pin AT reference for active tracking supply circuitry. Connect a 1A (1N4001-type) diode between V+ and OUT and a 1A Schottky diode from V– to OUT for line transient protection.
LIM+ (Pin 9): Output Amplifier Current Source Limit. Pin implements I resistor has a typical value of 3.5. For maximum current drive capability (190mA typical) short pin LIM+ to pin OUT. Reduction of current source capability is achieved by placing additional resistance from pin LIM+ to pin OUT. (i.e. An external 3.5 resistance from pin LIM+ to pin OUT will reduce the current sourcing capability of the output amplifier by approximately 50%.)
V+ (Pin 10): Local Positive Supply. Typically connected to the source of the active tracking supply N-channel MOSFET. This condition should be made using a ferrite bead. Operating V+ rail voltage is GATE+ self-bias voltage less the MOSFET VGS. Typical N-channel MOSFET characteris­tics provide V+ – AT
GATE+ (Pin 11): Positive Power Supply FET Gate Drive. Pin sinks current from pull-up resistor to bias gate of active tracking supply N-channel MOSFET. Self-biases to a typical value of 14V, referenced to pin AT resistor value is determined such that sink current into GATE+ pin remains greater than 50µA at maximum output signal voltage and less than 10mA at minimum output signal voltage.
AMPIN (Pin 12): Output Amplifier Input. Connected to external filter components through series protection re­sistor (usually 5k). Thevenin DC resistance of external filter and protection components should be 10k for opti­mum amplifier offset performance. See Applications In­formation section.
OUT
= I
ATREF
• R = VBE current clamp. Internal clamp
10V.
REF
GATE
+I
).
GATE
to generate
REF
REF
. Pull-up
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LT1684
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PI FU CTIO S
BG
(Pin 13): Normalized PWM Buffered Output. PWM
OUT
differential input is amplitude normalized to ±1.25V (refer- enced to the OUT pin). This signal is used to drive the active filter/amplifier. Filter resistor values must be chosen to limit the maximum current load on this pin to less than 2mA. The output is current limit protected to a typical value of ±4.5mA.
IN A (Pin 14): PWM Positive Input. Input is isolated from digital source by ~100pF series capacitor. A 10k resistor should be connected to the IN A pin in series with the isolation capacitor for transient protection. The PWM
UU
W
FUNCTIONAL BLOCK DIAGRA
PWM
INPUT
100pF
+
100pF
IN A
IN B
BG
5k10k
5k10k
OUT
receiver implements a diode forward drop of input hyster­esis (relative to IN B). This hysteresis and internal signal limiting assure common mode glitch rejection with isola­tion capacitor mismatches up to 2:1. For maximum perfor­mance, however, effort should be made to match the two PWM input isolation capacitors. Pin IN A is differentially clamped to pin IN B through back-to back isolation-base diodes. This results in a high impedance differential input ±100mV beyond the input thresholds. 5k internal input resistors yield a 10k (nominal) differential overdrive im­pedance.
1.25V
+
V
–1.25V
+
V
+
GATE
FILTER
ELEMENTS
RING
OUTPUT
(RING RETURN)
100pF
20pF
AMPIN
COMP1
COMP2
5k
+
LT1684 Block Diagram
15k
CURRENT
LIMIT
14V
14V
AT
LIM
OUT
GATE
LIM
REF
+
V
V
1684 BD
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OPERATIO
LT1684
U
(Refer to Functional Block Diagram)
BASIC THEORY OF OPERATION
The LT1684 operates using a user-provided pulse-width­modulated (PWM) digital signal as input*. The low fre­quency modulation component of this signal represents the desired output waveform. Changing the PWM input can thus dynamically control the frequency, cadence, amplitude and DC offset of the desired output. This method of sine wave generation can accomodate all popular ring tone frequencies including 17Hz, 20Hz, 25Hz and 50Hz.
The LT1684 receives the PWM input by a capacitor­isolated differential input at pins IN A and IN B. This signal is amplitude normalized by a bandgap reference and output single-ended on the BG carrier is ±1.25V about the voltage on the OUT pin.
The low frequency component of the normalized PWM signal is recovered using an active filter circuit con­structed using an onboard driver amplifier. This amplifier also provides current drive for the final ring tone output.
The ring tone output is used as the reference for a floating active biasing scheme by pin AT output rises and falls through its typical range of hundreds of volts, the LT1684 “tracks” the output signal, maintain­ing local supply voltages across the IC of approximately ±10V.
Input Receiver/Reference Buffer
The differential receiver for the PWM input signal requires minimum differential input levels of 1.6V to assure valid change-of-state. The receiver inputs are capacitor coupled, isolating the LT1684 from the PWM generator. The re­ceiver is leading edge triggered.
The input receiver controls a switched-state output that forces an amplitude normalized voltage (referenced to the OUT pin) of ±1.25V that follows the PWM input. This switched voltage is driven off-chip on pin BG the IN A input is driven higher than IN B (by the required
pin such that the PWM
OUT
. As the ring tone
REF
OUT
. When
1.6V), the reference drives BG When IN B input is driven higher than IN A, BG to –1.25V relative to OUT.
The amplitude normalized representation of the input PWM signal is used as the input for the active filter element and output driver.
Output Amplifier/Driver
The normalized PWM signal output on the BG converted to the final ring tone signal by an active filter. This filter consists of an onboard amplifier and a few external components. Although many different types of filters can be constructed, a 2-pole Multiple Feedback (MFB) configuration generally provides adequate perfor­mance and is desirable due to its simplicity and effective­ness.
The low frequency component of the ±1.25V PWM signal contains the desired ring tone frequency and cadence information. The MFB active filter strips this information from the PWM signal and amplifies this low frequency component to generate the final desired output.
Active Tracking Supplies
Implementation of the active tracking supply technique enables linear generation of the ring tone output, and takes advantage of the intrinsic supply noise immunity of a linear amplifier, reducing the need for large high voltage filtering elements.
Two external power MOSFETs act as voltage level-shifting devices and generate the power supply voltages for the LT1684. The LT1684 uses its own output as a voltage reference for the FET level shifters, “suspending” itself (by these generated supply voltages) about the signal output. In this manner, the LT1684 can linearly generate a signal hundreds of volts in amplitude at its output, while main­taining ±10V local supply rails across the IC itself.
to +1.25V above OUT.
OUT
is forced
OUT
OUT
pin is
* Contact Linear Technology for code.
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LT1684
WUUU
APPLICATIO S I FOR ATIO
Encoded PWM Signal Input Basics
The LT1684 accepts a user-supplied PWM carrier that represents the desired output ring tone signal. This PWM input is normalized by the LT1684 such that ring tone output amplitudes can be accurately encoded into the PWM input.
The LT1684 accepts a differential input to maximize rejec­tion of system transients and ground noise. If no differen­tial signal is readily available from the PWM controller, a simple inverter/buffer block can be used to create the differential signal required.
Each differential input is internally connected through a 5k series resistor to back-to-back isolation-base diodes. These devices internally clamp the differential input signal to ±100mV greater than the input comparator hysteresis range. The input comparator toggles with a differential hysteresis equal to that of a standard diode forward voltage (0.7V nominal). As such, the differential imped­ance of the input remains high throughout the input hysteresis region, then reduces to a nominal value of 10k (7k minimum) as the input is overdriven beyond the comparator input threshold. A minimum differential input of 1.6V is specified to assure valid switching.
The PWM signal can be visualized in terms of instanta­neous ring tone amplitude, normalized to the LT1684 amplitude reference. For a given desired output voltage V
, the input pulse train required follows the relation:
OUTN
V
= 2 • V
OUTN
DC = [V V DC = PWM input duty cycle
OUTN
= 1.25V normalized peak voltage
REF
• (DC – 0.5), or
REF
/ (2 • V
)] + 0.5, where:
REF
A 10% to 90% duty cycle range is a practical limit for a 10kHz input carrier. This corresponds to normalized sig­nal amplitude of ±1V. Duty cycles exceeding this range can cause increased output signal distortion as signal energy is lost due to finite rise and fall times becoming a signifi­cant percentage of the signal pulses. The associated reduction in the pulse energy manifests itself as a “soft clipping” of the output signal resulting in an increase in harmonic distortion.
The normalized PWM signal is amplified to the desired output signal level by the active filter/amplifier stage. Thus, dividing the desired peak output amplitude by the peak normalized encoded amplitude (V the required DC gain of the active filter.
System Considerations
Assuming use of a 10% to 90% maximum PWM range, the peak normalized signal will be:
V
(pk) = ± 0.8 • V
PWM
V
(pk) = V
OUT
Thus, the DC gain of the output filter equals the desired peak voltage of the output ring tone signal.
The frequency characteristics of the lowpass output filter must reflect the allowable carrier ripple on the output signal. For example, a 10kHz carrier system could use a 2-pole Butterworth lowpass with a cutoff frequency of 100Hz. This filter provides 40dB of input signal rejection at 10kHz yielding 25mV the output filter/amplifier was 100, the output ripple volt­age would be riding on a ±100V sine wave, and therefore be about –78dB relative to the output ring signal.
(pk) • Filter DC Gain
PWM
= ±1.0V, and:
REF
output ripple. If the DC gain of
P-P
OUT/VOUTN
) yields
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WUUU
APPLICATIO S I FOR ATIO
LT1684
For applications that are extremely output ripple sensitive, additional carrier rejection can be accomplished by modi­fying the output filter/amplifier characteristics such as implementing elliptical filter characteristics with a lower cutoff frequency or implementation of additional poles.
Filter Design and Component Selection
The ring tone information represented in the low fre­quency component of the input PWM signal is retrieved using an active filter. This filter also generates the appro­priate low frequency gain required to produce the high voltage output signal and references the output to ground (or other system reference). The frequency and gain characteristics of this circuit element are both configurable by the appropriate choice of external passive filter ele­ments. Because of the active tracking supply mode of operation, conventional active filter topologies cannot be used. Most amplifier/filter topologies can, however, be “transformed” into active tracking supply topologies.
A conventional amplifier circuit topology can be “trans­formed” into an active tracking supply amplifier circuit by:
a) Inverting the amplifier signal polarity (swap amplifier + and – connections) and input source polarity.
b) Referencing all signals to the output except the feed­back elements, which are referenced to ground (swap output and ground).
A variety of amplifier/filter configurations can be realized using the transformation technique. A 2-pole filter is generally adequate for most ringer applications. Due to the relative simplicity of infinite-gain Multiple Feedback (MFB) configurations, these filters are good candidates for ringer applications. Component selection and active tracking supply transformation will be described for the following 2-pole MFB infinite-gain lowpass filter.
Conventional Amplifier Configuration Active Tracking Supply Amplifier
R1 R2
+
V
IN
Lowpass Mulitple Feedback Active Filter Active Tracking Supply Lowpass
R1 R3
+
V
IN
+
LOAD
C2R2
C1
+
TRANSFORMATION
TRANSFORMATION
LOAD
+
V
IN
R1
Multiple Feedback Filter
+
V
IN
R2
+
R2
C1
R3R1
C2
+
LOAD
LOAD
1684 F01
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Page 10
LT1684
HERTZ (Hz)
1 10 100 1K 10K 100K
FILTER GAIN (dB)
1684 F02
–50
0
50
WUUU
APPLICATIO S I FOR ATIO
The component selections for the active tracking supply lowpass MFB filter configuration follow the relations:
C2 = mC R2 = 1± [1–4mQ2(1+|HO|)]
m ≤ 1 / [4Q2(1+|HO|)]
1
1/2
2ωnC1mQ
R1 = R2 / |HO| R3 =1
2
2
ω
C
R2m
n
1
Example:
Conditions: Output ring tone peak voltage = 100V
Ring frequency = 20Hz Input duty cycle range = 10% to 90% Filter Q = 0.707
Set: fn = ωn / 2π = 100Hz Choose: C1 = 1.0µF (a convenient value) Then: m [4(0.7)2(1+100)]–1 .005
Active Tracking Supply Lowpass Multiple
Feedback Filter Transfer Characteristic (AV vs fn)
However, bootstrapping an amplifier system about its own output creates a complex myriad of inherent stability and response issues. Attempting such a configuration with generic “jelly-bean” components is not recommended for the faint of heart or type-A personalities. The LT1684, however, makes for a simplistic approach to active track­ing component selection.
This filter configuration yields a DC Gain of 100, a corner frequency of just under 100Hz with gain reduction of only
0.1% at 20Hz, and a 10kHz carrier rejection of greater than 40dB at the output.
Active Tracking Supply Components
Given the previous discussion, implementation of an active tracking supply system may seem almost trivial.
C2 = mC1 C2 = 4700pF (sets m = 0.0047) R2 = 1± [1–4(0.0047)(0.707)2(101)]
1/2
(4π100)(1e–6)(.0047)(0.707)
R2 = 300k
R1 = 300k/100
R1 = 3.0k
R3 = [(2π100)2(1e–6)2(300k)(0.0047)]
R3 = 2k
–1
The high voltage MOSFET transistors used in the circuit must have an operating VDS specified at greater than the corresponding high voltage supply rail plus the opposite maximum excursion of the output signal. For example, if a system is designed with a 240V supply (+120V, –120V) and outputs a ring signal that has a 100V peak amplitude, the MOSFET VDS ratings must be greater than 240/2 + 100 = 220V.
Active Filter Tuned Oscillator— No PWM Input Required
A simple yet effective method of producing a high quality sine wave is to place a high-Q bandpass filter and a hard limited gain element in a positive feedback loop. This circuit will oscillate at the bandpass frequency, producing a sine wave at the filter output. The product of the funda­mental component of the limiter and the filter gain at the bandpass frequency determines the output amplitude. This type of circuit is commonly referred to as an active filter tuned oscillator.
10
Page 11
WUUU
APPLICATIO S I FOR ATIO
LT1684
Active Filter Tuned Oscillator Block Diagram
1684 F03
The LT1684 can be implemented easily into a telephone ringer circuit based on the active filter tuned oscillator topology, eliminating the need for a user-supplied PWM input signal. The LT1684’s active filter amplifier can be used as a high-Q bandpass filter element by configuring it as an active tracking supply bandpass. The LT1684’s controlled output receiver/buffer is also convenient for use as the hard limiter. Because the LT1684 receiver/ buffer requires a true differential input for proper opera­tion, a dual comparator IC such as the LT1017 must be bootstrapped along with the LT1684 to provide differen­tial control signals. The LT1017 and LT1684 receiver/ buffer combine to create a high gain hard limiter whose
output is controlled to ±1.25V. The LT1684 active bandpass filter is then connected as a positive feedback element with the limiter component, which completes the active filter tuned oscillator topology.
The active bandpass filter circuit is easily configured using a basic MFB bandpass configuration, however, the active tracking supply technique used by the LT1684 requires “transformation” of this topology. This “transformation” swaps the amplifier signal polarity, references all signals to the output, and references all feedback elements to ground as described previously in the Filter Design and Component Selection section.
The design equations for the active tracking bandpass filter are the same as the pretransformation MFB topology, such that if CF1 = CF2 = C:
RF1 = Q/(ωO • C •H0) RF2 = Q/(2Q2 –H0)(ωO • C) RF3 = 2Q/(ωO • C)
Example:
Conditions: Output peak voltage = 95V
Bandpass MFB Filter
C
F2
R
F3
R
F1
C
F1
+
V
IN
R
Active Tracking Bandpass MFB Filter
F2
R
F1
R
F2
C
F1
C
F2
+
+
V
IN
+
R
F3
V
OUT
1684 F5b
V
OUT
1684 F4a
Ring frequency = 20Hz Bandpass Q = 9.4
A square wave with peak amplitude A has a fundamental component with amplitude 4A/π, where A = 1.25V. There­fore, the desired filter’s bandpass gain HO = 95/(4 •
1.25/π) ~ 60. Given capacitor values C = 0.22µF (a conve- nient value) and desired filter characteristics of: Q = 9.4, HO = 60, ωO = 2π(20Hz), then: RF1 = 5.6k, RF2 = 2.7k, RF3 = 680k. The amplitude, frequency and envelope re­sponse time of the output signal can be adjusted by simply changing the values of resistors RF1 to RF3 accordingly.
This produces a high voltage, high quality 20Hz sine wave at the filter output with a peak amplitude of 95V. Differen­tial amplitude and frequency characteristics are achieved by simply changing a few resistor values. The output of the LT1684 is internally current limited to a minimum of ±100mA peak, allowing this ring tone generation circuit to be used with loads up to 7 REN with no degradation of the output waveform.
11
Page 12
LT1684
WUUU
APPLICATIO S I FOR ATIO
Active Filter Tuned Oscillator Ring Tone Generator
110V
8
5
+
+
V
C2
100pF
D1
1N5817
R10
10k
C1 20pF
1
2
3
4
5
6
7
7
IN B
COMP1
COMP2
LIM
V
GATE
AT
REF
1/2 LT1017
4
LT1684
IN A
BG
OUT
AMPIN
GATE
LIM
OUT
V
R9
10k
6V
R8
10k
14
13
12
11
+
10
+
9
+
R
F3
8
680k
C
C
F1
F2
0.22µF
0.22µF
1
8
+
V
1/2 LT1017
V
4
R
F1
5.6k
R
F2
2.7k
3
+
R6 1k
2
R5 100k
R3
100k
R2
100
FB1
C4
6.8nF
C3
6.8nF
M1 IRF610
C5
0.1µF
D2 1N4001
+
OUTPUT
±100mA
()
PEAK
–110V
FB1: FERRONICS FMB1601 (716) 388-1020
Ringer Output
R4 100k
R1 100
M2 IRF9610
1684 F05a
12
Page 13
TYPICAL APPLICATIO S
U
M1
IRF610
D1
1N4001
C3
LT1684
+
OUTPUT
0.1µF
M2
IRF9610
1684 TA03
C14
+
876
LT1017
123
R2 10k
10µF
160V
CC
V
OUT A
OUT B
–IN A
–IN B
+IN A
C15
+
5
+IN B
EE
V
4
R1
R8
10µF
1k
100k
160V
R3
R4 10k
10k
14
IN A
IN B
1
C6
R7
100pF
100k
13
BG
COMP1
2
R6
12
OUT
3
C5 20pF
FB1
100
11
10
+
+
GATE
AMPIN
LT1684
COMP2
LIM–V–GATE–AT
4
5
DS1
F1
R
V
1N5817
10k
R10
91V
DZ2
F3
R
680k
620k
F2
R
2.7k
3.3k
F1
R
5.6k
6.8k
95V
70V
V (PEAK)
7
10
LOAD (REN)
R
6.8nF
F2
2.7k
DZ4
91V
R5 100
R14
100k
10k
R12
50k
R13
15
2
C2
6.8nF
5.6k
0.22µF
F1
C
9
+
LIM
6
15
R11
C1
0.22µF
F2
C
F3
R
680k
8
OUT
REF
7
50k
2
C11
0.47µF
160V
C12
0.47µF
160V
3
4
OPTO2 H11AG1
6
C10
0.1µF
C13
0.01µF
R15
4
2k
FB1: FERRONICS FMB1601 (716) 388-1020
D4
MURS160
C9
0.47µF
2
T1
5V-15V to Ring Tone Fully Isolated Converter Using an Active Filter-Tuned Oscillator Circuit
COILTRONICS
160V
1
14239-X3
12
5, 6
C7
D2
MURS160
220µF
10V
11
7, 8
49
D3
DZ1
1N4001
44V
R9
39
C8
1nF
OPTO1 H11AG1
DS2
4
SW
IN
V
5
C4
1µF
6
MBRS1100
1
C
V
LT1270
FB
2
GND
+
INPUT
5V TO 15V
13
Page 14
LT1684
TYPICAL APPLICATIO S
U
5kW PWM-to-Analog Converter
300k
120V
6800pF
1000pF
10k
14
PWM
1000pF
IN
3k
0.1µF
FB1: FERRONICS FMB1601 (716) 388-1020
10k
2k
470pF
IN A
1
IN B
13
BG
5k
12
AMPIN
6800pF
OUT
GATE
LT1684
GATE
–120V
100k
11
+
COMP1
COMP2
6
100
LIM
AT
LIM
100k
V
OUT
REF
V
100
1nF
IN
1nF
V
LT1166
V
BOTTOM
47
2N3906
1
TOP
SENSE
SENSE
4
2N3904
47
100
8
+
7
+
I
LIM
3
V
OUT
6
I
LIM
5
100
TYPICAL POWER SLICE (1 OF 13 IN PARALLEL)
100V
IRF230
1k
0.22
1µF
1µF
0.22
1k
IRF9240
–100V
0.22
1µH
1684 TA04
5kW LOAD
3.9k
180µH
100
2
V
100
2N3906
MTP­2N50E
FB1
10
+
2 9
+
8 7 3 4
5
100pF
MTP­2N50E
20pF
180µH
2k
2N3904
14
Page 15
PACKAGE DESCRIPTIO
U
Dimensions in inches (millimeters) unless otherwise noted.
N Package
14-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
0.770* (19.558)
MAX
14
0.255 ± 0.015* (6.477 ± 0.381)
11
1213
8910
LT1684
0.300 – 0.325
(7.620 – 8.255)
0.009 – 0.015
(0.229 – 0.381)
+0.035
0.325 –0.015
+0.889
8.255
()
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
0.020
(0.508)
MIN
0.130 ± 0.005
(3.302 ± 0.127)
0.125
(3.175)
MIN
0.005
(0.125)
MIN
S Package
14-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
13
14
2
31
0.045 – 0.065
(1.143 – 1.651)
0.100
(2.54)
BSC
0.337 – 0.344* (8.560 – 8.738)
12
6
9
7
0.065
(1.651)
TYP
0.018 ± 0.003
(0.457 ± 0.076)
N14 1098
8
5
4
11
10
0.228 – 0.244
(5.791 – 6.197)
0.010 – 0.020
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
*
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
× 45°
0° – 8° TYP
0.016 – 0.050
(0.406 – 1.270)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
TYP
0.150 – 0.157** (3.810 – 3.988)
1
3
2
4
0.050
(1.270)
BSC
5
7
6
0.004 – 0.010
(0.101 – 0.254)
S14 1298
15
Page 16
LT1684
TYPICAL APPLICATIO
V
IN
PWM
INPUT
5V
+
C1
100pF
C3 100pF
C4 20pF
C2
100pF
R4
10k
IN B
COMP1
COMP2
LIM
V
GATE
AT
REF
LT1684
IN A
BG
OUT
AMPIN
GATE
LIM
OUT
R2
10k
R3 5k
+
FB1
+
V
D1
1N4001
+
1µF
U
5V Input Nonisolated 5 REN Ring Generator
100V
D2
MURS160T3
C11
IRF610
+
0.47µF 160V
+
C10
0.47µF 160V
D3
MURS160T3
M1
MBRS1100
DZ1 60V MMSZ5264BT1
R10
100k
R8
100
C8
300k
R1 2k
C5
R5
4700pF
R6 3k
C7
6.8nF 160V
C6
6.8nF 160V
T1 COILTRONICS CTX 14468-X1
12
10
9
7
DS1
4, 5
1, 2
4
1
R11 470
SW
V
C
C9
0.1µF
+
U1
LT1271
GND
C12 220µF 35V
5
V
IN
R12 5k
2
FB
3
R7 100
DS2 D1N5817
FB1: FERRONICS FMB1601 (716) 388-1020
M2 IRF9610
R9 100k
C13 0.1µF
–100V
R16
1M
R15
12k
RING TONE OUT
D4
D1N4148
LT1211
1
OUT A –IN A
V
EE
V
OUT B
–IN B+IN A +IN B
27 36 4
D5
8
CC
D1N4148
5
1684 TA02
R14 1M
R13 12k
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LT1082 1A High Voltage Switching Regulator VIN = 3V to 75V, SW Voltage = 100V LT1166 Power Output Stage Automatic Bias System Sets Class AB Bias Currents, Eliminates Adjustments
and Thermal Runaway LTC1177-5/LTC1177-12 Isolated MOSFET Drivers 2500V LT1270 8A Power Switching Regulator VIN = 3.5V to 30V, IQ = 7mA LT1271 4A Power Switching Regulator VIN = 3.5V to 30V, IQ = 7mA LT1339 High Power Synchronous DC/DC Controller Operation Up to 60V, Output Current Up to 50A LT1676 Wide Input Range, High Efficiency, Step-Down Switching Regulator Operation Up to 60V, 100kHz, Up to 500mA Output
Isolation, UL Recognized
RMS
16
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
www.linear-tech.com
1684f LT/TP 0300 4K • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1999
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