Datasheet LT1226 Datasheet (Linear Technology)

Page 1
LT1226
Low Noise Very High Speed
Operational Amplifier
EATU
F
Gain of 25 Stable
1GHz Gain Bandwidth
400V/µs Slew Rate
2.6nV/Hz Input Noise Voltage
50V/mV Minimum DC Gain, RL = 500
1mV Maximum Input Offset Voltage
±12V Minimum Output Swing into 500
Wide Supply Range ±2.5V to ±15V
7mA Supply Current
100ns Settling Time to 0.1%, 10V Step
Drives All Capacitive Loads
PPLICATI
A
Wideband Amplifiers
Buffers
Active Filters
Video and RF Amplification
Cable Drivers
Data Acquisition Systems
RE
S
O
U S
DUESCRIPTIO
The LT1226 is a low noise, very high speed operational amplifier with excellent DC performance. The LT1226 features low input offset voltage and high DC gain. The circuit is a single gain stage with outstanding settling characteristics. The fast settling time makes the circuit an ideal choice for data acquisition systems. The output is capable of driving a 500 load to ±12V with ± 15V supplies and a 150 load to ±3V on ±5V supplies. The circuit is also capable of driving large capacitive loads which makes it useful in buffer or cable driver applications.
The LT1226 is a member of a family of fast, high per­formance amplifiers that employ Linear Technology Corporation’s advanced bipolar complementary processing.
U
O
A
PPLICATITYPICAL
Photodiode Preamplifier, AV = 5.1k, BW = 15MHz Gain of +25 Pulse Response
+
V
+
51
51
LT1226
5.1k
LT1226 TA01
LT1226 TA02
1
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LT1226
WU
U
PACKAGE
/
O
RDER I FOR ATIO
W
O
A
LUTEXI T
S
Total Supply Voltage (V+ to V–) ............................... 36V
Differential Input Voltage .........................................±6V
Input Voltage ............................................................±V
Output Short Circuit Duration (Note 1) ............Indefinite
Operating Temperature Range
LT1226C................................................ 0°C to 70°C
Maximum Junction Temperature
Plastic Package .............................................. 150°C
Storage Temperature Range ................. – 65°C to 150°C
A
WUW
ARB
U G
I
S
S
TOP VIEW
1
NULL
2
–IN
3
+IN
4
V
N8 PACKAGE
8-LEAD PLASTIC DIP
8
NULL
+
V
7
OUT
6
NC
5
S8 PACKAGE
8-LEAD PLASTIC SOIC
LT1226 PO01
ORDER PART
NUMBER
LT1226CN8 LT1226CS8
S8 PART MARKING
1226
Lead Temperature (Soldering, 10 sec.)................. 300°C
LECTRICAL C CHARA TERIST
E
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
e
n
i
n
R
IN
C
IN
CMRR Common-Mode Rejection Ratio VCM = ±12V 94 103 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 94 110 dB A
VOL
V
OUT
I
OUT
SR Slew Rate (Note 3) 250 400 V/µs
GBW Gain Bandwidth f = 1MHz 1 GHz tr, t
f
t
s
R
O
I
S
Input Offset Voltage (Note 2) 0.3 1.0 mV Input Offset Current 100 400 nA Input Bias Current 48 µA Input Noise Voltage f = 10kHz 2.6 nV/Hz Input Noise Current f = 10kHz 1.5 pA/Hz Input Resistance VCM = ±12V 24 40 M
Input Capacitance 2pF Input Voltage Range + 12 14 V Input Voltage Range – –13 –12 V
Large Signal Voltage Gain V Output Swing RL = 500 12.0 13.3 ±V Output Current V
Full Power Bandwidth 10V Peak, (Note 4) 6.4 MHz
Rise Time, Fall Time A Overshoot A Propagation Delay 50% VIN to 50% V Settling Time 10V Step, 0.1%, AV = –25 100 ns Differential Gain f = 3.58MHz, AV = +25, RL = 150 0.7 % Differential Phase f = 3.58MHz, AV = +25, RL = 150 0.6 Deg Output Resistance A Supply Current 79 mA
ICS
VS = ±15V, TA = 25°C, VCM = 0V unless otherwise noted.
Differential 15 k
= ±10V, RL = 500 50 150 V/mV
OUT
= ±12V 24 40 mA
OUT
= +25,10% to 90%, 0.1V 5.5 ns
VCL
= +25, 0.1V 35 %
VCL
OUT
= +25, f = 1MHz 3.1
VCL
5.5 ns
2
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LT1226
LECTRICAL C CHARA TERIST
E
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
CMRR Common-Mode Rejection Ratio VCM = ±2.5V 94 103 dB A
VOL
V
OUT
I
OUT
SR Slew Rate (Note 3) 250 V/µs
GBW Gain Bandwidth f = 1MHz 700 MHz tr, t
f
t
s
I
S
Input Offset Voltage (Note 2) 1.0 1.4 mV Input Offset Current 100 400 nA Input Bias Current 48 µA Input Voltage Range + 2.5 4 V Input Voltage Range – –3 – 2.5 V
Large Signal Voltage Gain V
Output Voltage RL = 500 3.0 3.7 ±V
Output Current V
Full Power Bandwidth 3V Peak, (Note 4) 13.3 MHz
Rise Time, Fall Time A Overshoot A Propagation Delay 50% VIN to 50% V Settling Time –2.5V to 2.5V, 0.1%, AV = –24 60 ns Supply Current 79 mA
ICS
VS = ±5V, TA = 25°C, VCM = 0V unless otherwise noted.
= ±2.5V, RL = 500 50 100 V/mV
OUT
= ±2.5V, RL = 150 75 V/mV
V
OUT
= 150 3.0 3.3 ±V
R
L
= ±3V 20 40 mA
OUT
= +25, 10% to 90%, 0.1V 8 ns
VCL
= +25, 0.1V 25 %
VCL
OUT
8ns
LECTRICAL C CHARA TERIST
E
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
CMRR Common-Mode Rejection Ratio VS = ±15V, VCM = ±12V and VS = ±5V, VCM = ±2.5V 92 103 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 92 110 dB A
VOL
V
OUT
I
OUT
SR Slew Rate VS = ±15V, (Note 3) 250 400 V/µs I
S
Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted indefinitely.
Note 2: Input offset voltage is tested with automated test equipment in <1 second.
Input Offset Voltage VS = ±15V, (Note 2) 0.3 1.3 mV
= ± 5V, (Note 2) 1.0 1.8 mV
V
S
Input V Input Offset Current VS = ±15V and VS = ±5V 100 600 nA Input Bias Current VS = ±15V and VS = ±5V 4 9 µA
Large Signal Voltage Gain VS = ±15V, V
Output Swing VS = ±15V, RL = 500 12.0 13.3 ±V
Output Current VS = ±15V, V
Supply Current VS = ±15V and VS = ±5V 7 10.5 mA
Drift 6 µ V/°C
OS
= ±5V, V
V
S
= ±5V, RL = 500 or 150 3.0 3.3 ±V
V
S
= ±5V, V
V
S
0°C TA 70°C, VCM = 0V unless otherwise noted.
ICS
= ±10V, RL = 500 35 150 V/mV
OUT
= ±2.5V, RL = 500 35 100 V/mV
OUT
= ±12V 24 40 mA
OUT
= ±3V 20 40 mA
OUT
Note 3: Slew rate is measured between ±10V on an output swing of ±12V on ±15V supplies, and ±2V on an output swing of ±3.5V on ±5V supplies.
Note 4: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2πVp.
3
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LT1226
SUPPLY VOLTAGE (±V)
0
0
OUTPUT VOLTAGE SWING (V)
5
10
15
20
5101520
LT1226 TPC03
TA = 25°C R
L
= 500
V
OS
= 30mV
+V
SW
–V
SW
UW
Y
PICA
20
15
LPER
F
O
R
AT
CCHARA TERIST
E
C
ICS
Input Common Mode Range vs Output Voltage Swing vs Supply Voltage Supply Current vs Supply Voltage Supply Voltage
8.0
TA = 25°C
< 1mV
V
OS
TA = 25°C
7.5
10
5
MAGNITUDE OF INPUT VOLTAGE (V)
0
0
+V
CM
–V
5101520
SUPPLY VOLTAGE (±V)
CM
LT1226 TPC01
7.0
SUPPLY CURRENT (mA)
6.5
6.0 0
5101520
SUPPLY VOLTAGE (±V)
LT1226 TPC02
Output Voltage Swing vs Input Bias Current vs Input Open Loop Gain vs Resistive Load Common Mode Voltage Resistive Load
30
TA = 25°C
= 30mV
V
25
20
15
10
OUTPUT VOLTAGE SWING (Vp-p)
OS
5
0
10
100 1k 10k
LOAD RESISTANCE ()
VS = ±15V
VS = ±5V
LT1226 TPC04
5.0
VS = ±15V
= 25°C
T
A
+ I
I
B+
IB =
4.5
4.0
3.5
INPUT BIAS CURRENT (µA)
3.0
–15
INPUT COMMON MODE VOLTAGE (V)
B–
2
–10 0 10 15
–5 5
LT1226 TPC05
120
TA = 25°C
110
100
90
OPEN LOOP GAIN (dB)
80
70
10
VS = ±15V
VS = ±5V
100 1k 10k
LOAD RESISTANCE ()
LT1226 TPC06
Supply Current vs Temperature Input Bias Current vs Temperature Temperature
10
VS = ±15V
9
8
7
6
SUPPLY CURRENT (mA)
5
4
–25 25 75 125
–50
4
TEMPERATURE (°C)
100500
LT1226 TPC07
INPUT BIAS CURRENT (µA)
5.0
4.75
4.5
4.25
4.0
3.75
3.5
–25 25 75 125
–50
TEMPERATURE (°C)
VS = ±15V
+ I
I
B+
B–
IB =
2
100500
LT1226 TPC08
Output Short Circuit Current vs
55
50
45
40
35
30
OUTPUT SHORT CIRCUIT CURRENT (mA)
25
–50
SOURCE
–25 25 75 125
TEMPERATURE (°C)
SINK
VS = ±5V
100500
LT1226 TPC09
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UW
FREQUENCY (Hz)
1k
0
COMMON MODE REJECTION RATIO (dB)
20
40
60
80
100
120
10k 100k 1M 10M
LT1226 TPC12
100M
VS = ±15V T
A
= 25°C
FREQUENCY (HZ)
1M
18
VOLTAGE MAGNITUDE (dB)
22
26
30
34
38
10M 100M
C = 100pF
C = 0pF
C = 50pF
LT1226 TPC15
20
24
28
32
36
VS = ±15V T
A
= 25°C
A
V
= –25
C = 1000pF 
C = 500pF
Y
PICA
1000
100
10
LPER
F
O
R
AT
CCHARA TERIST
E
C
ICS
Power Supply Rejection Ratio vs Common Mode Rejection Ratio vs
Input Noise Spectral Density Frequency Frequency
VS = ±15V
= 25°C
T
A
= +101
A
V
i
n
= 100k
R
S
10
1.0
0.1
INPUT VOLTAGE NOISE (nV/Hz)
120
100
VS = ±15V
= 25°C
T
A
80
+PSRR–PSRR
60
LT1226
INPUT VOLTAGE NOISE (nV/Hz)
1
10 1k 10k 100k
100
e
n
FREQUENCY (Hz)
0.01
LT1226 TPC10
40
POWER SUPPLY REJECTION RATIO (dB)
0
100
10k 100k 1M
1k
FREQUENCY (Hz)
10M 100M
LT1226 TPC11
Voltage Gain and Phase vs Frequency Response vs Frequency Output Swing vs Settling Time Capacitive Load
110
90
70
50
VOLTAGE GAIN (dB)
30
TA = 25°C
10
100
1k
VS = ±5V
V
= ±5V
S
10k 100k 1M
FREQUENCY (Hz)
VS = ±15V
VS = ±15V
10M 100M
LT1226 TPC13
100
80
60
40
20
0
10
8
PHASE MARGIN (DEGREES)
6 4
2 0
–2
OUTPUT SWING (V)
–4 –6 –8
–10
0
VS = ±15
= 25°C
T
A
10mV SETTLING
AV = –25
20
40
SETTLING TIME (ns)
A
= +25
V
60
AV = +25
AV = –25
80
100
LTC1226 TPC14
120
Closed Loop Output Impedance vs Frequency Gain Bandwidth vs Temperature Slew Rate vs Temperature
100
VS = ±15V T
= 25°C
A
= +25
A
V
10
1
0.1
OUTPUT IMPEDANCE ()
0.01 10k
100k
FREQUENCY (Hz)
1M
10M
LT1226 TPC16
100M
1.15 VS = ±15V
1.10
1.05
1.0
0.95
GAIN BANDWIDTH (MHz)
0.90
0.85
–50
–25 0
TEMPERATURE (˚C)
50 100 125
25 75
LT1226 TPC17
500
VS = ±15V
= –25
A
V
450
400
350
300
SLEW RATE (V/µs)
250
200
–50
–25 0
–SR
+SR
50 100 125
25 75
TEMPERATURE (˚C)
LT1226 TPC18
5
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LT1226
PPLICATI
A
U
O
S
I FOR ATIO
WU
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The LT1226 may be inserted directly into HA2541, HA2544, AD847, EL2020 and LM6361 applications, provided that the amplifier configuration is a noise gain of 25 or greater, and the nulling circuitry is removed. The suggested nulling circuit for the LT1226 is shown below.
Offset Nulling
+
V
5k
1
+
LT1226
8
7
4
V
3
2
0.1µF
6
0.1µF
LT1226 AI01
Layout and Passive Components
As with any high speed operational amplifier, care must be taken in board layout in order to obtain maximum perfor­mance. Key layout issues include: use of a ground plane, minimization of stray capacitance at the input pins, short lead lengths, RF-quality bypass capacitors located close to the device (typically 0.01µF to 0.1µF), and use of low ESR bypass capacitors for high drive current applications (typically 1µF to 10µF tantalum). Sockets should be avoided when maximum frequency performance is required, although low profile sockets can provide reasonable performance up to 50MHz. For more details see Design Note 50. Feedback resistors greater than 5k are not recommended because a pole is formed with the input capacitance which can cause peaking. If feedback resistors greater than 5k are used, a parallel capacitor of 5pF to 10pF should be used to cancel the input pole and optimize dynamic performance.
Transient Response
Small Signal, AV = +25 Small Signal, AV = –25
LT1226 AI02
The large signal response in both inverting and noninvert­ing gain shows symmetrical slewing characteristics. Nor­mally the noninverting response has a much faster rising edge due to the rapid change in input common mode voltage which affects the tail current of the input differen­tial pair. Slew enhancement circuitry has been added to the LT1226 so that the falling edge slew rate is enhanced which balances the noninverting slew rate response.
Large Signal, AV = +25 Large Signal, AV = –25
LT1226 AI03
Input Considerations
Resistors in series with the inputs are recommended for the LT1226 in applications where the differential input voltage exceeds ±6V continuously or on a transient basis. An example would be in noninverting configurations with high input slew rates or when driving heavy capacitive loads. The use of balanced source resistance at each input is recommended for applications where DC accuracy must be maximized.
The LT1226 gain bandwidth is 1GHz when measured at 1MHz. The actual frequency response in a gain of +25 is considerably higher than 40MHz due to peaking caused by a second pole beyond the gain of 25 crossover point. This is reflected in the small signal transient response. Higher noise gain configurations exhibit less overshoot as seen in the inverting gain of 25 response.
6
Capacitive Loading
The LT1226 is stable with all capacitive loads. This is accomplished by sensing the load induced output pole and adding compensation at the amplifier gain node. As the capacitive load increases, both the bandwidth and phase margin decrease so there will be peaking in the
Page 7
LT1226
V
IN
V
OUT
LT1226 TA06
+
LT1226
300k 300k
1
8
10k 10k
25k
25
100pF
100pF
LT1097
+
AV = 1001
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
frequency domain and in the transient response. The photo of the small signal response with 1000pF load shows 55% peaking. The large signal response with a 10,000pF load shows the output slew rate being limited by the short circuit current.
AV = –25, CL = 1000pF AV = +25, CL = 10,000pF
LT1226 AI04
The LT1226 can drive coaxial cable directly, but for best pulse fidelity the cable should be doubly terminated with a resistor in series with the output.
Compensation
configurations (i.e., in a gain of 1000 it will have a bandwidth of about 1MHz). The amplifier is stable in a noise gain of 25 so the ratio of the output signal to the inverting input must be 1/25 or less. Straightforward gain configurations of +25 or –24 are stable, but there are a few configurations that allow the amplifier to be stable for lower signal gains (the noise gain, however, remains 25 or more). One example is the inverting amplifier shown in the typical applications sections below. The input signal has a gain of –RF/RIN to the output, but it is easily seen that this configuration is equivalent to a gain of –24 as far as the amplifier is concerned. Lag compensation can also be used to give a low frequency gain less than 25 with a high frequency gain of 25 or greater. The example below has a DC gain of 6, but an AC gain of +31. The break frequency of the RC combination across the amplifier inputs should be at least a factor of 10 less than the gain bandwidth of the amplifier divided by the high frequency gain (in this case 1/10 of 1GHz/31 or 3MHz).
The LT1226 has a typical gain bandwidth product of 1GHz which allows it to have wide bandwidth in high gain
U
O
CA
PPLICATITYPI
L
Lag Compensation
V
IN
200
330pF
1k
+
LT1226
AV = +6, f < 2MHz
Compensation for Lower Closed-Loop Gains
R
F
R
V
IN
IN
R
C
LT1226
+
SA
+
V
IN
LT1226
V
OUT
R2 50
5k
LT1226 TA03
V
OUT
R1
1.2k
Cable Driving
R3
75
VOS Null Loop
75 CABLE
R4 75
LT1226 TA04
V
OUT
AV = –
RF 
; R
24 × (RIN || RC)
F
R
IN
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of circuits as described herein will not infringe on existing patent rights.
LT1226 TA05
7
Page 8
LT1226
E
W
A
NULL
1 8
W
SPL
I
IIFED S
CH
+
7V
3
4V
PACKAGEDESCRIPTI
TI
O
C
BIAS 1
–IN+IN
2
BIAS 2
U
Dimensions in inches (millimeters) unless otherwise noted.
6 OUT
LT1226 SS
0°– 8° TYP
0.300 – 0.320
(7.620 – 8.128)
0.009 - 0.015
(0.229 - 0.381)
+0.025
0.325
–0.015
+0.635
8.255
()
–0.381
0.010 – 0.020
(0.254 – 0.508)
0.016 – 0.050
0.406 – 1.270
× 45°
0.008 – 0.010
(0.203 – 0.254)
0.045 – 0.065
(1.143 – 1.651)
0.065
(1.651)
TYP
0.045 ± 0.015
(1.143 ± 0.381)
0.100 ± 0.010
(2.540 ± 0.254)
0.053 – 0.069
(1.346 – 1.753)
0.014 – 0.019
(0.356 – 0.483)
N8 Package
8-Lead Plastic DIP
0.130 ± 0.005
(3.302 ± 0.127)
T
J MAX
150°C 130°C/W
θ
JA
S8 Package
8-Lead Plastic SOIC
0.050
(1.270)
BSC
0.125
(3.175)
MIN
(0.508)
0.018 ± 0.003
(0.457 ± 0.076)
0.004 – 0.010
(0.102 – 0.254)
0.020
MIN
8
1234
0.228 – 0.244
(5.791 – 6.198)
0.400
(10.160)
MAX
76
0.189 – 0.197
(4.801 – 5.004)
7
8
5
6
0.250 ± 0.010
(6.350 ± 0.254)
N8 1291
5
0.150 – 0.157
(3.810 – 3.988)
8
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900
FAX
: (408) 434-0507
TELEX
: 499-3977
T
J MAX
150°C 220°C/W
θ
JA
1
LINEAR TECHNOLOGY CORPORATION 1992
3
2
4
LT/GP 0692 10K REV 0
S8 1291
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