Datasheet LT1222 Datasheet (Linear Technology)

Page 1
LT1222
500MHz, 3nV/Hz, AV 10
Operational Amplifier
EATU
F
Gain-Bandwidth: 500MHz
Gain of 10 Stable Uncompensated
Slew Rate: 200V/µs
Input Noise Voltage: 3nV/Hz
C-LoadTM Op Amp Drives Capacitive Loads
External Compensation Pin
Maximum Input Offset Voltage: 300µV
Maximum Input Bias Current: 300nA
Maximum Input Offset Current: 300nA
Minimum Output Swing Into 500: ±12V
Minimum DC Gain: 100V/mV, RL = 500
Settling Time to 0.1%: 75ns, 10V Step
Settling Time to 0.01%: 120ns, 10V Step
Differential Gain: 0.4%, AV = 2, RL = 150
Differential Phase: 0.1°, AV = 2, RL = 150
PPLICATI
A
Wideband Amplifiers
Buffers
Active Filters
Video and RF Amplification
Cable Drivers
8-, 10-, 12-Bit Data Acquisition Systems
RE
S
O
U S
DUESCRIPTIO
The LT1222 is a low noise, very high speed operational amplifier with superior DC performance. The LT1222 is stable in a noise gain of 10 or greater without compensa­tion, or the part can be externally compensated for lower closed-loop gain at the expense of lower bandwidth and slew rate. It features reduced input offset voltage, lower input bias currents, lower noise and higher DC gain than devices with comparable bandwidth and slew rate. The circuit is a single gain stage that includes proprietary DC gain enhancement circuitry to obtain precision with high speed. The high gain and fast settling time make the circuit an ideal choice for data acquisition systems. The circuit is also capable of driving capacitive loads which makes it useful in buffer or cable driver applications. The compen­sation node can also be used to clamp the output swing.
The LT1222 is a member of a family of fast, high perfor­mance amplifiers that employ Linear Technology Corporation’s advanced complementary bipolar process­ing. For unity-gain stable applications the LT1220 can be used, and for gains of 4 or greater the LT1221 can be used.
and LTC are registered trademarks and LT is a trademark of Linear Technology Corporation.
C-Load is a trademark of Linear Technology Cortporation.
TYPICAL APPLICATION
AV = 10 with Output Clamping AV = –1, CC = 30pF Pulse Response
15V
1N5711 1N5711
3
V
IN
2
100Ω
+
LT1222
909
5
6
 ≤ 0.5V
V
OUT
U
3k
1N4148 0.1µF
LT1222 • TA01
RF = RG = 1k V
= ±15V
S
VIN = 100mV f = 5MHz
LT1222 • TA02
1
Page 2
LT1222
A
W
O
LUTEXI T
S
A
WUW
ARB
U G
I
S
Total Supply Voltage (V+ to V–) ............................. 36V
Differential Input Voltage ........................................ ±6V
Input Voltage .......................................................... ±V
Output Short-Circuit Duration (Note 1)........... Indefinite
Specified Temperature Range
LT1222C (Note 2)................................... 0°C to 70°C
LT1222M ......................................... –55°C to 125°C
WU
/
TOP VIEW
1
2
3
H PACKAGE
= 175°C, θ
O
RDER I FOR ATIO
ORDER PART
NULL
8
4
V
5
= 150°C/W
JA
+
V
7
6
V
OUT
NC
CONSULT FACTORY
NUMBER SPECIAL
ORDER
PACKAGE
NULL
–IN
+IN
8-LEAD TO-5 METAL CAN
T
JMAX
Operating Temperature Range
LT1222C........................................... –40°C TO 85°C
S
LT1222M ......................................... –55°C to 125°C
Maximum Junction Temperature (See Below)
Plastic Package ............................................... 150°C
Ceramic Package ............................................. 175°C
Storage Temperature Range ................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
U
TOP VIEW
NULL
1
–IN
2
+IN
3
V
4
J8 PACKAGE
8-LEAD CERAMIC DIP
S8 PACKAGE
8-LEAD PLASTIC SOIC
T
= 175°C, θ
JMAX
= 150°C, θ
T
JMAX
= 150°C, θ
T
JMAX
NULL
8
+
V
7
V
6
OUT
NC
5
N8 PACKAGE
8-LEAD PLASTIC DIP
= 100°C/W (J)
JA
= 130°C/W (N)
JA
= 190°C/W (S)
JA
ORDER PART
NUMBER
LT1222CN8 LT1222MJ8 LT1222CS8
S8 PART MARKING
1222
Consult factory for Industrial grade parts.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
e
n
i
n
R
IN
C
IN
CMRR Common-Mode Rejection Ratio VCM = ±12V 100 120 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 98 110 dB A
VOL
V
OUT
I
OUT
SR Slew Rate (Note 4) 150 200 V/µs
GBW Gain-Bandwidth f = 1MHz 500 MHz
Input Offset Voltage (Note 3) 100 300 µV Input Offset Current 100 300 nA Input Bias Current 100 300 nA Input Noise Voltage f = 10kHz 3 nV/Hz Input Noise Current f = 10kHz 2 pA/Hz Input Resistance VCM = ±12V 20 45 M
Inut Capacitance 2pF Input Voltage Range (Positive) 12 14 V
Input Voltage Range (Negative) –13 – 12 V
Large-Signal Voltage Gain V Output Swing RL = 500 12 13 ±V Output Current V
Full Power Bandwidth 10V Peak (Note 5) 3.2 MHz
VS = ±15V, TA = 25°C, VCM = 0V, unless otherwise specified.
Differential 12 k
= ±10V, RL = 500 100 200 V/mV
OUT
= ±12V 24 26 mA
OUT
2
Page 3
LT1222
ELECTRICAL CHARACTERISTICS
VS = ±15V, TA = 25°C, VCM = 0V, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tr, t
f
Rise Time, Fall Time AV = 10, 10% to 90%, 0.1V 2.4 ns Overshoot AV = 10, 0.1V 45 % Propagation Delay AV = 10, 50% VIN to 50% V
t
s
Settling Time 10V Step, 0.1% 75 ns
, 0.1V 5.2 ns
OUT
10V Step, 0.01% 120 ns
Differential Gain AV = 2, CC = 50pF, f = 3.58MHz, RL = 150 (Note 6) 0.40 %
A
= 10, CC = 0pF, f = 3.58MHz, RL = 1k (Note 6) 0.15 %
V
Differential Phase AV = 2, CC = 50pF, f = 3.58MHz, RL = 150 (Note 6) 0.10 DEG
AV = 10, CC = 0pF, f = 3.58MHz, RL = 1k (Note 6) 0.01 DEG
R
O
I
S
V
= ±15V, 0°C TA 70°C, VCM = 0V, unless otherwise specified.
S
Output Resistance AV = 10, f = 1MHz 0.1 Supply Current 8 10.5 mA
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
Input Offset Voltage (Note 3) 100 600 µV Input VOS Drift 5 µV/°C
I
OS
I
B
Input Offset Current 100 400 nA Input Bias Current 100 400 nA
CMRR Common-Mode Rejection Ratio VCM = ±12V 100 120 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 98 110 dB A V I
OUT
VOL OUT
Large-Signal Voltage Gain V
= ±10V, RL = 500 100 200 V/mV
OUT
Output Swing RL = 500 12 13 ±V Output Current V
= ±12V 24 26 mA
OUT
SR Slew Rate (Note 4) 150 200 V/µs I
S
Supply Current 811 mA
V
= ±15V, –55°C TA 125°C, VCM = 0V, unless otherwise specified.
S
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
Input Offset Voltage (Note 3) 100 600 µV Input VOS Drift 5 µV/°C
I
OS
I
B
Input Offset Current 100 800 nA Input Bias Current 100 1000 nA
CMRR Common-Mode Rejection Ratio VCM = ±12V 98 120 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 98 110 dB A
VOL
V
OUT
Large-Signal Voltage Gain V
= ±10V, RL = 500 50 200 V/mV
OUT
Output Swing RL = 500 10 13 ±V
RL = 1k 12 13 ±V
I
OUT
Output Current V
= ±10V 20 26 mA
OUT
V
= ±12V 12 13 mA
OUT
SR Slew Rate (Note 4) 110 200 V/µs I
S
The denotes specifications which apply over the full temperature range.
Note 1: A heat sink may be required when the output is shorted indefinitely. Note 2: Commercial parts are designed to operate over –40°C to 85°C, but
are not tested nor guaranteed beyond 0°C to 70°C. Industrial grade parts specified and tested over –40°C to 85°C are available on special request.
Supply Current 811 mA
Note 3: Input offset voltage is pulse tested and is exclusive of warm-up drift. Note 4: Slew rate is measured between ±10V on an output swing of ±12V. Note 5: FPBW = SR/2πV
.
P
Note 6: Differential Gain and Phase are tested with five amps in series. Attenuators of 1/Gain are used as loads.
Consult factory.
3
Page 4
LT1222
0
0
MAGNITUDE OF OUTPUT VOLATGE (V)
5
10
15
20
5101520
LT1222 • TPC03
+V
SW
–V
SW
SUPPLY VOLTAGE (±V)
TA = 25°C R
L
= 500
V
OS
= 30mV
LOAD RESISTANCE ()
10
70
OPEN-LOOP GAIN (dB)
80
100
110
120
100 1k 10k
LT1222 • TPC06
90
VS = ±5V
VS = ±15V
TA = 25°C
FREQUENCY (Hz)
100
0
POWER SUPPLY REJECTION RATIO (dB)
20
40
60
80
100
120
1k 100k 10M 100M
LT1222 • TPC09
10k 1M
VS = ±15V T
A
= 25°C
–PSRR
+PSRR
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
Input Common-Mode Range vs Supply Voltage
20
TA = 25°C
= 0.5mV
V
OS
15
10
5
MAGNITUDE OF INPUT VOLTAGE (V)
0
0
5101520
SUPPLY VOLTAGE (±V)
+V
–V
Output Voltage Swing vs Resistive Load
30
TA = 25°C V
= 30mV
)
P-P
OUTPUT VOLTAGE SWING (V
OS
25
20
15
10
5
0
10
100 1k 10k
LOAD RESISTANCE ()
±15V SUPPLIES
±5V SUPPLIES
CM
CM
LT1222 • TPC01
LT1222 • TPC04
Supply Current vs Supply Voltage and Temperature
11
10
T = 125°C
9
8
7
SUPPLY CURRENT (mA)
6
5
0
5101520
SUPPLY VOLTAGE (±V)
T = 25°C
T = –55°C
Input Bias Current vs Input Common-Mode Voltage
500
VS = ±15V
400
T
= 25°C
A
300 200 100
0
–100
–200
INPUT BIAS CURRENT (nA)
–300 –400 –500
–15
–10 –5 10
INPUT COMMON-MODE VOLTAGE (V)
+
I
B
I
B
05 15
Output Voltage Swing vs Supply Voltage
LT1222 • TPC02
Open-Loop Gain vs Resistive Load
LT1222 • TPC05
Output Short-Circuit Current vs Temperature
50
VS = ±5V 
45
40
35
30
OUTPUT SHORT-CIRCUIT CURRENT (mA)
4
25
20
–50
–25 50 100 125
025 75
TEMPERATURE (°C)
LT1222 • TPC07
Input Noise Spectral Density
1000
100
10
INPUT VOLTAGE NOISE (nV/Hz)
1
10 1k 10k 100k
100
i
n
e
n
FREQUENCY (Hz)
VS = ±15V T A R
= 25°C
A
= 101
V
= 100k
S
LT1222 • TPC08
Power Supply Rejection Ratio vs Frequency
100
INPUT CURRENT NOISE (pA/Hz)
10
1
0.1
Page 5
W
SETTLING TIME (ns)
0
OUTPUT SWING (V)
2
6
10
100
LT1222 • TPC12
–2
–6
0
4
8
–4
–8
–10
25
50
75
125
10mV
10mV
1mV
1mV
VS = ±15V T
A
= 25°C
FREQUENCY (Hz)
0.01
OUTPUT IMPEDANCE ()
0.1
1
10
10k 1M 10M 100M
LT1222 • TPC15
0.001 100k
VS = ±15V T
A
= 25°C
A
V
= 10
U
TYPICAL PERFORMANCE CHARACTERISTICS
LT1222
Common-Mode Rejection Ratio vs Frequency
120
100
80
60
40
20
COMMON-MODE REJECTION RATIO (dB)
0
1k
10k
FREQUENCY (Hz)
1M
100k 10M 100M
Voltage Gain and Phase vs Frequency
120
100
80
60
40
VOLTAGE GAIN (dB)
20
TA = 25°C
0
100
1k
VS = ±15V
VS = ±5V
10k 1M 100M
FREQUENCY (Hz)
VS = ±5V
100k
VS = ±15V
= 25°C
T
A
LT1222 • TPC10
VS = ±15V
10M
LT1222 • TPC13
10
8 6 4
2 0
–2
OUTPUT SWING (V)
–4 –6 –8
–10
100
80
PHASE MARGIN (DEG)
60
40
20
0
–20
VOLTAGE MAGNITUDE (dB)
Output Swing and Error vs Settling Time (Noninverting)
VS = ±15V
= 25°C
T
A
10mV
10mV
25
0
SETTLING TIME (ns)
1mV
1mV
75
50
100
LT1222 • TPC11
Frequency Response vs Capacitive Load
30
VS = ±15V
28
= 25°C
T
A
= –10
A
V
26 24
22 20
18 16 14 12 10
1
C = 500pF
C = 1000pF
10
FREQUENCY (MHz)
C = 100pF
C = 50pF
LT1222 • TPC14
Output Swing and Error vs Settling Time (Inverting)
125
Closed-Loop Output Impedance vs Frequency
C = 0
100
Gain-Bandwidth vs Temperature
550
VS = ±15V
525
500
475
450
GAIN-BANDWIDTH (MHz)
425
400
–25 75
–50
0
25 50 100
TEMPERATURE (°C)
LT1222 • TPC16
125
SLEW RATE (V/µs)
275
VS = ±15V
= –10
A
V
250
= 0
C
C
+
) + (SR–)
(SR
SR =
225
200
175
150
125
–50
–25 75
2
0
25 50 100
TEMPERATURE (°C)
LT1222 • TPC17
Total Harmonic Distortion vs FrequencySlew Rate vs Temperature
0.01 VS = ±15V V
= 3V
O
RMS
= 500
R
L
0.001 AV = ±10
0.0001
TOTAL HARMONIC DISTORTION AND NOISE (%)
125
10 100
FREQUENCY (Hz)
1k 10k 100k
LT1222 • TPC18
5
Page 6
LT1222
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
Small Signal, AV = 10
Large Signal, AV = 10
Large Signal, AV = 10, CL = 10,000pF
RF = 909 R
= 100
G
V
S
V
IN
f = 5MHz V
= 20mV
= ±15V
Small Signal, AV = –10
V
RF = 1k R
= 100 (75)
G
= ±15V
S
V
IN
= 20mV
LT1222 • TPC19 LT1222 • TPC20
RF = 909 R
= 100
G
= ±15V
S
V
IN
= 2V
Large Signal, AV = –10
LT1222 • TPC22 LT1222 • TPC23 LT1222 • TPC24
f = 5MHz
U
R
= 1k
F
= 100 (75)
R
G
VS = ±15V V
= 2V
IN
WUU
APPLICATIONS INFORMATION
The LT1222 is stable in noise gains of 10 or greater and may be inserted directly into HA2520/2/5, HA2541/2/4, AD817, AD847, EL2020, EL2044 and LM6361 applica­tions, provided that the nulling circuitry is removed and the amplifier configuration has a high enough noise gain. The suggested nulling circuit for the LT1222 is shown in the following figure.
Offset Nulling
+
V
5k
1
3
2
+
LT1222
8
7
4
V
0.1µF
6
0.1µF
LT1222 • AI01
f = 2MHz
RF = 909 R
= 100
G
VS = ±15V
= 2V
V
IN
f = 20kHz
LT1222 • TPC21
Small Signal, AV = –10, CL = 1,000pF
f = 2MHz
R
= 1k
F
R
= 100 (75)
G
V
= ±15V
S
V
IN
= 15mV
f = 500kHz
Layout and Passive Components
The LT1222 amplifier is easy to apply and tolerant of less than ideal layouts. For maximum performance (for ex­ample, fast settling time) use a ground plane, short lead lengths and RF-quality bypass capacitors (0.01µF to 0.1µF). For high drive current applications use low ESR bypass capacitors (1µF to 10µF tantalum). Sockets should be avoided when maximum frequency performance is re­quired. For more details see Design Note 50. Feedback resistors greater than 5k are not recommended because a pole is formed with the input capacitance which can cause peaking or oscillations. Stray capacitance on pin 5 should be minimized. Bias current cancellation circuitry is em­ployed on the inputs of the LT1222 so the input bias current and input offset current have identical specifications. For this reason, matching the impedance on the inputs to reduce bias current errors is not necessary.
6
Page 7
LT1222
U
WUU
APPLICATIONS INFORMATION
Output Clamping
Access to the internal compensation node at pin 5 allows the output swing of the LT1222 to be clamped. An example is shown on the first page of this data sheet. The compen­sation node is approximately one diode drop above the output and can source or sink 1.2mA. Back-to-back Schot­tky diodes clamp pin 5 to a diode drop above ground so the output is clamped to ± 0.5V (the drop of the Schottkys at
1.2mA). The diode reference is bypassed for good AC response. This circuit is useful for amplifying the voltage at false sum nodes used in settling time measurements.
Capacitive Loading
The LT1222 is stable with capacitive loads. This is accom­plished by sensing the load induced output pole and adding compensation at the amplifier gain node. As the capacitive load increases, both the bandwidth and phase margin decrease. There will be peaking in the frequency domain as shown in the curve of Frequency Response vs Capacitive Load. The small-signal transient response will have more overshoot as shown in the photo of the small-signal response with 1000pF load. The large-signal response with a 10,000pF load shows the output slew rate being limited to 4V/µ s by the short-circuit current. The LT1222 can drive coaxial cable directly, but for best pulse fidelity a resistor of value equal to the characteristic impedance of the cable (i.e., 75) should be placed in series with the output. The other end of the cable should be terminated with the same value resistor to ground.
Compensation
The LT1222 has a typical gain-bandwidth product of 500MHz which allows it to have wide bandwidth in high gain configurations (i.e., in a gain of 100, it will have a bandwidth of about 5MHz). For added flexibility the ampli­fier frequency response may be adjusted by adding capaci­tance from pin 5 to ground. The compensation capacitor
may be used to reduce overshoot, to allow the amplifier to be used in lower noise gains, or simply to reduce band­width. Table 1 shows gain and compensation capacitor vresus – 3dB bandwidth, maximum frequency peaking and small-signal overshoot.
Table 1
A
CC (pF) f
V
–1 30 99 4.2 36 –1 50 70 0.9 13 –1 82 32 0 0 –1 150 13 0 0 5 10 140 3.8 35 5 20 100 0 5 530 34 0 1 550 15 0 0 10 0 150 9.5 45 10 5 111 0.2 10 10 10 40 0 2 10 20 17 0 0 20 0 82 0.1 10 20 5 24 0 0 20 10 14 0 0
(MHz) Max Peaking (dB) Overshoot (%)
–3dB
For frequencies < 10MHz the frequency response of the amplifier is approximately:
f = 1/[2π × 53 × (CC + 6pF) × (Noise Gain)]
The slew rate is affected as follows:
SR = 1.2mA/(CC + 6pF)
An example would be a gain of –10 (noise gain of 11) and CC = 20pF which has 10.5MHz bandwidth and 46V/µ s slew rate. It should be noted that the LT1222 is not stable in AV = 1 unless CC = 50pF and a 1k resistor is used as the feedback resistor. The 1k and input capacitance increase the noise gain at frequency to aid stability.
7
Page 8
LT1222
+
+
LT1220
GAIN = [R4/R3][1 + (1/2)(R2/R1 + R3/R4) + (R2 + R3)/R5] = 102 TRIM R5 FOR GAIN TRIM R1 FOR COMMON-MODE REJECTION BW = 3MHz
V
IN
V
OUT
+
LT1222
LT1222 • TA04
R3 1k
R5
220
R4
10k
R2
1k
R1
10k
U
TYPICAL APPLICATIONS N
VOS Null Loop
150k
V
IN
1
+
LT1222
10k
10k
100pF
150k
8
25k
25
100pF
LT1097
LT1222 • TA03
+
WW
SI PLIFIED SCHE ATIC
+
7V
NULL
18
BIAS 1
V
OUT
AV = 1001
COMP
Two Op Amp Instrumemtation Amplifier
BIAS 2
5
+IN 3
V
4
8
6 OUT
–IN
2
LT1222 • SS
Page 9
PACKAGE DESCRIPTION
0.335 – 0.370
(8.509 – 9.398)
DIA
0.305 – 0.335
(7.747 – 8.509)
0.016 – 0.021
(0.406 – 0.533)
(1.270)
SEATING
PLANE
0.010 – 0.045
(0.254 – 1.143)
0.040
(1.016)
MAX
U
Dimensions in inches (millimeters) unless otherwise noted.
H8 Package
8-Lead TO-5 Metal Can
45°TYP
0.050
MAX
GAUGE PLANE
NOTE: LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND SEATING PLANE.
0.165 – 0.185
(4.191 – 4.699)
0.500 – 0.750
(12.700 – 19.050)
REFERENCE PLANE
0.027 – 0.034
(0.686 – 0.864)
0.110 – 0.160
(2.794 – 4.064)
INSULATING
STANDOFF
LT1222
0.027 – 0.045
(0.686 – 1.143)
0.200 – 0.230
(5.080 – 5.842)
BSC
H8(5) 0592
J8 Package
8-Lead Ceramic Dip
CORNER LEADS OPTION 
(4 PLCS)
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.300 BSC
(0.762 BSC)
0.008 – 0.018
(0.203 – 0.457)
0.385 ± 0.025
(9.779 ± 0.635)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS.
0° – 15°
OPTION
0.005
(0.127)
MIN
0.025
(0.635)
RAD TYP
0.045 – 0.068
(1.143 – 1.727)
0.014 – 0.026
(0.360 – 0.660)
0.405
(10.287)
MAX
87
12
65
3
4
0.220 – 0.310
(5.588 – 7.874)
0.015 – 0.060
(0.381 – 1.524)
0.100 ± 0.010
(2.540 ± 0.254)
0.200
(5.080)
MAX
0.125
3.175 MIN
J8 0694
9
Page 10
LT1222
PACKAGE DESCRIPTION
U
Dimensions in inches (millimeters) unless otherwise noted.
N8 Package
8-Lead Plastic Dip
0.400* (10.160)
MAX
0.255 ± 0.015* (6.477 ± 0.381)
876
5
12
0.300 – 0.325
(7.620 – 8.255)
0.065
(1.651)
0.009 – 0.015
(0.229 – 0.381)
+0.025
0.325
–0.015
+0.635
8.255
()
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTURSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm).
TYP
0.045 ± 0.015
(1.143 ± 0.381)
(2.540 ± 0.254)
0.045 – 0.065
(1.143 – 1.651)
0.100 ± 0.010
3
4
0.130 ± 0.005
(3.302 ± 0.127)
0.125
(3.175)
MIN
0.018 ± 0.003
(0.457 ± 0.076)
0.015
(0.380)
MIN
N8 0694
10
Page 11
PACKAGE DESCRIPTION
U
Dimensions in inches (millimeters) unless otherwise noted.
S8 Package
8-Lead Plastic SOIC
0.189 – 0.197* (4.801 – 5.004)
7
8
5
6
LT1222
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm).
0.010 – 0.020
0.016 – 0.050
0.406 – 1.270
× 45°
0°– 8° TYP
0.228 – 0.244
(5.791 – 6.197)
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
0.150 – 0.157* (3.810 – 3.988)
1
3
2
4
(1.270)
0.004 – 0.010
(0.101 – 0.254)
0.050
BSC
SO8 0294
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
Page 12
LT1222
U.S. Area Sales Offices
NORTHEAST REGION Linear Technology Corporation
3220 Tillman Drive, Suite 120 Bensalem, PA 19020 Phone: (215) 638-9667 FAX: (215) 638-9764
Linear Technology Corporation
266 Lowell St., Suite B-8 Wilmington, MA 01887 Phone: (508) 658-3881 FAX: (508) 658-2701
FRANCE Linear Technology S.A.R.L.
Immeuble "Le Quartz" 58 Chemin de la Justice 92290 Chatenay Malabry France Phone: 33-1-41079555 FAX: 33-1-46314613
GERMANY Linear Techonolgy GmbH
Untere Hauptstr. 9 D-85386 Eching Germany Phone: 49-89-3197410 FAX: 49-89-3194821
SOUTHEAST REGION Linear Technology Corporation
17060 Dallas Parkway Suite 208 Dallas, TX 75248 Phone: (214) 733-3071 FAX: (214) 380-5138
CENTRAL REGION Linear Technology Corporation
Chesapeake Square 229 Mitchell Court, Suite A-25 Addison, IL 60101 Phone: (708) 620-6910 FAX: (708) 620-6977
International Sales Offices
KOREA Linear Technology Korea Branch
Namsong Building, #505 Itaewon-Dong 260-199 Yongsan-Ku, Seoul Korea Phone: 82-2-792-1617 FAX: 82-2-792-1619
SINGAPORE Linear Technology Pte. Ltd.
507 Yishun Industrial Park A Singapore 2776 Phone: 65-753-2692 FAX: 65-754-4113
SOUTHWEST REGION Linear Technology Corporation
22141 Ventura Blvd. Suite 206 Woodland Hills, CA 91364 Phone: (818) 703-0835 FAX: (818) 703-0517
NORTHWEST REGION Linear Technology Corporation
782 Sycamore Dr. Milpitas, CA 95035 Phone: (408) 428-2050 FAX: (408) 432-6331
TAIWAN Linear Technology Corporation
Rm. 801, No. 46, Sec. 2 Chung Shan N. Rd. Taipei, Taiwan, R.O.C. Phone: 886-2-521-7575 FAX: 886-2-562-2285
UNITED KINGDOM Linear Technology (UK) Ltd.
The Coliseum, Riverside Way Camberley, Surrey GU15 3YL United Kingdom Phone: 44-276-677676 FAX: 44-276-64851
JAPAN Linear Technology KK
5F YZ Bldg. 4-4-12 Iidabashi, Chiyoda-Ku Tokyo, 102 Japan Phone: 81-3-3237-7891 FAX: 81-3-3237-8010
Linear Technology Corporation
12
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900
FAX
: (408) 434-0507
TELEX
World Headquarters
Linear Technology Corporation
1630 McCarthy Blvd. Milpitas, CA 95035-7487 Phone: (408) 432-1900 FAX: (408) 434-0507
: 499-3977
0794
LT/GP 0894 5K REV A • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1992
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