Datasheet LT1189 Datasheet (Linear Technology)

Page 1
LT1189
Low Power
Video Difference Amplifier
EATU
F
Differential or Single-Ended Gain Block (Adjustable)
–3dB Bandwidth, AV = ±10 35MHz
Slew Rate 220V/µs
Low Supply Current 13mA
Output Current ±20mA
CMRR at 10MHz 48dB
LT1193 Pin Out
Low Cost
Single 5V Operation
Drives Cables Directly
Output Shutdown
PPLICATI
A
Line Receivers
Video Signal Processing
Cable Drivers
Tape and Disc Drive Systems
RE
S
O
U
S
DUESCRIPTIO
The LT1189 is a difference amplifier optimized for opera­tion on ± 5V, or a single 5V supply, and gain 10. This versatile amplifier features uncommitted high input im­pedance (+) and (–) inputs, and can be used in differential or single-ended configurations. Additionally, a second set of inputs give gain adjustment and DC control to the difference amplifier.
The LT1189’s high slew rate, 220V/µs, wide bandwidth, 35MHz, and ±20mA output current require only 13mA of supply current. The shutdown feature reduces the power dissipation to a mere 15mW, and allows multiple amplifi­ers to drive the same cable.
The LT1189 is a low power, gain of 10 stable version of the popular LT1193, and is available in 8-pin miniDIPs and SO packages. For lower gain applications see the LT1187 data sheet.
CABLE
U
O
A
PPLICATITYPICAL
Closed-Loop Gain vs FrequencyCable Sense Amplifier for Loop Through Connections
with DC Adjust
V
IN
5V
3
+ –
LT1189
+ –
–5V
7
4
909
6
V
OUT
LT1189 • TA01
2
V
1
DC
8
100
50
40
30
20
10
0
0.1 10 100
1
FREQUENCY (MHz)
VS = ±5V
= 1k
R
L
LT1189 • TA02
1
Page 2
LT1189
WU
U
PACKAGE
/
O
RDER I FOR ATIO
W
O
A
LUTEXI T
S
Total Supply Voltage (V+ to V–) ............................. 18V
Differential Input Voltage ........................................ ±6V
Input Voltage .......................................................... ±V
Output Short Circuit Duration (Note 1) ........ Continuous
Operating Temperature Range
LT1189M..................................... – 55°C to 150°C
LT1189C............................................. 0°C to 70°C
Junction Temperature (Note 2)
Plastic Package (CN8,CS8) ......................... 150°C
Ceramic Package (CJ8,MJ8) ....................... 175°C
Storage Temperature Range ................ – 65°C to 150°C
A
WUW
ARB
U G
I
S
S
TOP VIEW
1+/REF 2
–IN +IN
3
V
J8 PACKAGE
8-LEAD HERMETIC DIP
S8 PACKAGE
8-LEAD PLASTIC SOIC
T
= 175°C, θJA = 100°C/W (J8)
JMAX
T
= 150°C, θJA = 100°C/W (N8)
JMAX
T
= 150°C, θJA = 150°C/W (S8)
JMAX
–/FB
8
+
7
V
6
OUT
54
S/D
N8 PACKAGE
8-LEAD PLASTIC DIP
LT1189 • POI01
ORDER PART
NUMBER
LT1189MJ8 LT1189CJ8 LT1189CN8 LT1189CS8
S8 PART MARKING
1189
Lead Temperature (Soldering, 10 sec.)................ 300°C
+
5V
VS = ±5V, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
e
n
i
n
R
IN
C
IN
VIN
LIM
CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 80 105 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±8V 75 90 dB V
OUT
G
E
SR Slew Rate (Note 6, 10) 150 220 V/µs FPBW Full Power Bandwidth VO = 2V BW Small Signal Bandwidth AV = 10 35 MHz tr, t
f
t
PD
t
s
Diff A Diff Ph Differential Phase RL = 1k, AV = 10, (Note 9) 0.75 DEG I
S
LECTRICAL C CHARA TERIST
E
= 0V, R
REF
Input Offset Voltage Either Input, (Note 4) 1.0 3.0 mV
Input Offset Current Either Input 0.2 1.0 µA Input Bias Current Either Input ±0.5 ±2.0 µA Input Noise Voltage fO = 10kHz 30 nV/Hz Input Noise Current fO = 10kHz 1.25 pA/Hz Input Resistance Differential 30 k Input Capacitance Either Input 2.0 pF Input Voltage Limit (Note 5) ±170 mV Input Voltage Range –2.5 3.5 V
Output Voltage Swing VS = ±5V, RL = 1k, AV = 50 ±3.8 ±4.0 V
Gain Error VO = ±1.0V, AV = 10 1.0 3.5 %
Rise Time, Fall Time AV = 50, VO = ±1.5V, 20% to 80% (Note 10) 35 50 75 ns Propagation Delay RL= 1k, VO = ±125mV, 50% to 50% 12 ns Overshoot VO = ±50mV 10 % Settling Time 3V Step, 0.1%, (Note 8) 1 µs
V
Differential Gain RL = 1k, AV = 10, (Note 9) 0.6 %
Supply Current 13 16 mA Shutdown Supply Current Pin 5 at V
= 900 from pins 6 to 8, R
FB1
ICS
= 100 from pin 8 to ground, RL = R
FB2
SOIC Package 1.0 4.0 mV
VS = ±8V, RL = 1k, AV = 50 ±6.7 ±7.0 VS = ±8V, RL = 300, AV = 50, (Note 3) ±6.4 ±6.8
P-P
TA = 25°C, (Note 3)
+ R
FB1
, (Note 7) 35 MHz
= 1k, CL 10pF, pin 5 open.
FB2
LT1189M/C
0.8 1.5 mA
P-P
2
Page 3
LT1189
+
5V
V
= ±5V, V
S
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
S/D
t
on
t
off
LECTRICAL C CHARA TERIST
E
= 0V, R
REF
Shutdown Pin Current Pin 5 at V Turn On Time Pin 5 from V– to Ground, RL = 1k 500 ns Turn Off Time Pin 5 from Ground to V–, RL = 1k 600 ns
= 900 from pins 6 to 8, R
FB1
ICS
= 100 from pin 8 to ground, RL = R
FB2
TA = 25°C, (Note 3)
FB1
+ R
= 1k, CL 10pF, pin 5 open.
FB2
LT1189M/C
525 µA
5V
V
LECTRICAL C CHARA TERIST
E
+
= 5V, V
S
= 0V, V
S
= 2.5V, R
REF
= 900 from pins 6 to 8, R
FB1
ICS
open.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
CMRR Common-Mode Rejection Ratio VCM = 2.0V to 3.5V 80 100 dB V
OUT
SR Slew Rate VO = 1.5V to 3.5V 175 V/µs BW Small-Signal Bandwidth AV = 10 30 MHz I
S
I
S/D
+
5V
VS = ±5V, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
VOS/T Input V I
OS
I
B
CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 80 105 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±8V 65 90 dB V
OUT
G
E
I
S
I
S/D
Input Offset Voltage Either Input, (Note 4) 1.0 3.0 mV
SOIC Package 1.0 5.0 mV
Input Offset Current Either Input 0.2 1.0 µA Input Bias Current Either Input ±0.5 ±2.0 µA Input Voltage Range 2.0 3.5 V
Output Voltage Swing RL = 300 to Ground V
(Note 3)
Supply Current 12 15 mA Shutdown Supply Current Pin 5 at V Shutdown Pin Current Pin 5 at V
LECTRICAL C CHARA TERIST
E
= 0V, R
REF
Input Offset Voltage Either Input, (Note 4) 1.0 7.5 mV
Input Offset Current Either Input 0.2 1.5 µA Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range –2.5 3.5 V
Output Voltage Swing VS = ±5V, RL = 1k, AV = 50 ±3.7 ±4.0 V
Gain Error VO = ±1V, AV = 10, RL = 1k 1.0 6.0 % Supply Current 13 17 mA Shutdown Supply Current Pin 5 at V–, (Note 11) 0.8 1.5 mA Shutdown Pin Current Pin 5 at V
= 900 from pins 6 to 8, R
FB1
Drift 10 µV/°C
OS
= 100 from pin 8 to ground, RL = R
FB2
VS = ±8V, RL = 1k, AV = 50 ±6.6 ±7.0 VS = ±8V, RL = 300, AV = 50, (Note 3) ±6.4 ±6.6
TA = 25°C, (Note 3)
= 100 from pin 8 to V
FB2
–55°C TA ≤ 125°C, (Note 3)
ICS
, RL = R
REF
High 3.6 4.0 V
OUT
V
Low 0.15 0.4
OUT
FB1
+ R
= 1k, CL 10pF, pin 5
FB2
LT1189M/C
0.8 1.5 mA
525 µA
= 1k, CL 10pF, pin 5 open.
LT1189M
525 µA
+ R
FB1
FB2
3
Page 4
LT1189
+
5V
V
= ±5V, V
S
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
VOS/T Input V I
OS
I
B
CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 80 105 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±8V 70 90 dB V
OUT
G
E
I
S
I
S/D
5V
+
V
= +5V, V
S
open.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
VOS/T Input V I
OS
I
B
CMRR Common-Mode Rejection Ratio VCM = 2.0V to 3.5V 80 100 dB V
OUT
I
S
I
S/D
Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted continuously.
Note 2: T
according to the following formulas:
P
D
Note 3: When R
= 300 is specified, then an additional 430 is added to the output such
R
L
that (R Note 4: V
pair, and is input referred. Note 5: V
pin 3) for which the output can respond.
LECTRICAL C CHARA TERIST
E
= 0V, R
REF
Input Offset Voltage Either Input 1.0 3.0 mV (Note 4) SOIC Package 1.0 6.0 mV
Input Offset Current Either Input 0.2 1.5 µA Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range –2.5 3.5 V
Output Voltage Swing VS = ±5V, RL = 1k, AV = 50 ±3.7 ±4.0 V
Gain Error VO = ±1V, AV = 10, RL = 1k 1.0 3.5 % Supply Current 13 17 mA Shutdown Supply Current Pin 5 at V–, (Note 11) 0.8 1.5 mA Shutdown Pin Current Pin 5 at V
LECTRICAL C CHARA TERIST
E
= 0V, V
S
Input Offset Voltage, (Note 4) Either Input 1.0 3.0 mV
Input Offset Current Either Input 0.2 1.5 µA Input Bias Current Either Input ±0.5 ±3.5 µA Input Voltage Range 2.0 3.5 V
Output Voltage Swing RL = 300 to Ground V
Supply Current 12 16 mA Shutdown Supply Current Pin 5 at V, (Note 11) 0.8 1.5 mA Shutdown Pin Current Pin 5 at V
is calculated from the ambient temperature TA and power dissipation
J
LT1189MJ8, LT1189CJ8: T LT1189CN8: T LT1189CS8: T
= 1k is specified, the load resistor is R
L
+ R
FB1
) in parallel with 430 is RL = 300.
FB2
measured at the output (pin 6) is the contribution from both input
OS
is the maximum voltage between –VIN and +VIN (pin 2 and
IN LIM
= 900 from pins 6 to 8, R
FB1
Drift 5.0 µV/°C
OS
= 2.5V, R
REF
Drift 5.0 µV/°C
OS
= TA + (PD × 100°C/W)
J
= TA + (PD × 100°C/W)
J
= TA + (PD × 150°C/W)
J
= 900 from pins 6 to 8, R
FB1
FB2
VS = ±8V, RL = 1k, AV = 50 ±6.6 ±7.0 VS = ±8V, RL = 300, AV = 50, (Note 3) ±6.4 ±6.6
(Note 3) V
+ R
FB1
, but when
FB2
ICS
0°C TA ≤ 70°C, (Note 3)
= 100 from pin 8 to ground, RL = R
ICS
0°C TA ≤ 70°C, (Note 3)
= 100 from pin 8 to V
FB2
Note 6: Slew rate is measured between ±1V on the output, with a V ±0.5V, A
V
Note 7: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2πVp.
Note 8: Settling time measurement techniques are shown in “Take the Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985.
Note 9: NTSC (3.58MHz). Note 10: AC parameters are 100% tested on the ceramic and plastic DIP
packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO packaged parts (S8 suffix).
Note 11: See Application section for shutdown at elevated temperatures. Do not operate shutdown above T
REF
High 3.5 4.0 V
OUT
Low 0.15 0.4
OUT
= 10 and RL = 1k.
+ R
FB1
, RL = R
> 125°C.
J
= 1k, CL 10pF, pin 5 open.
FB2
LT1189C
525 µA
+ R
FB1
= 1k, CL 10pF, pin 5
FB2
LT1189C
525 µA
IN
step of
4
Page 5
LT1189
UW
Y
PICA
3.0
2.5
µ
2.0
1.5
1.0
0.5
INPUT BIAS CURRENT ( A)
0
–0.5
–5
200
180 160
140 120 100
80 60 40 20
EQUIVALENT INPUT NOISE VOLTAGE (nV/ Hz)
0
LPER
F
O
R
AT
CCHARA TERIST
E
C
ICS
Input Bias Current vs Common-Mode Voltage vs Common-Mode Voltage Input Bias Current vs Temperature Temperature
+
VS = ±5V
–55°C
25°C
125°C
–3 0 2 4
–4 –2 1 3
–1 5
COMMON-MODE VOLTAGE (V)
LT1189 • TPC01
100
VS = ±5V
0
–100
I
–200
INPUT BIAS CURRENT (nA)
–300
–400
–50
OS
0 25 75 125
–25 50 100
TEMPERATURE (°C)
+I
B
–I
B
LT1189 • TPC02
V
–0.5
–1.0 –1.5 –2.0
2.0
1.5
COMMON-MODE RANGE (V)
1.0
0.5
V
–50 25 75 125
–25 50 100
V+ = 1.8V TO 9V
V+ = –1.8V TO –9V
0
TEMPERATURE (°C)
Equivalent Input Noise Voltage vs Equivalent Input Noise Current vs Frequency Frequency Supply Current vs Supply Voltage
V = ±5V
S
T = 25°C
A
R = 0
S
10 1k 10k 100k
100
FREQUENCY (Hz)
LT1189 • TPC04
12
10
8
6
4
2
EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)
0
10 1k 10k 100k
100
FREQUENCY (Hz)
VS = ±5V
= 25°C
T
A
= 100k
R
S
LT1189 • TPC05
16
14
12
SUPPLY CURRENT (mA)
10
8
246 10
0
±SUPPLY VOLTAGE (V)
–55°C
25°C
125°C
LT1189 • TPC03
8
LT1189 • TPC06
Shutdown Supply Current vs Temperature Gain Error vs Temperature Open-Loop Gain vs Temperature
6.0 V = ±5V
S
5.0
V
= –V
+ 0.6V
S/D
4.0
3.0
2.0
1.0
SHUTDOWN SUPPLY CURRENT (mA)
0
–50
EE
V
S/D
V
= –V
EE
+ 0.2V
S/D
0 25 75 125
–25 50 100
TEMPERATURE (°C)
= –V
V
S/D
+ 0.4V
EE
= –V
EE
LT1189 • TPC07
–1.2
VS = ±5V
= ±1V
V
OUT
–1.4
= 10
A
V
= 1k
R
L
–1.6
–1.8
–2.0
GAIN ERROR (%)
–2.2
–2.4
–50
–25 25 75
0 50 100 125
TEMPERATURE (°C)
LT1189 • TPC08
16
VS = ±5V
14
= ±3V
V
O
12
10
8
6
4
OPEN-LOOP GAIN (kV/V)
2
0
–25 25 75
–50 0 50 100 125
TEMPERATURE (°C)
RL = 1k
RL = 500
LT1189 • TPC09
5
Page 6
LT1189
FREQUENCY (Hz)
COMMON-MODE REJECTION RATIO (dB)
50
60
70
80
100k 10M 100M
LT1189 • TPC15
30
1M
40
90
VS = ±5V T
A
= 25°C
R
L
= 1k
±SUPPLY VOLTAGE (V)
0
100
GAIN BANDWIDTH PRODUCT (MHz)
150
200
250
24 810
LT1189 • TPC12
6
TA = 25°C
TA = 125°C
TA = –55°C
AV = 20dB
±SUPPLY VOLTAGE (V)
OUTPUT SATURATION VOLTAGE (V)
V
+
LT1189 • TPC18
V
0.3
–0.8
–0.7
0.2
0246 108
–0.9
–1.0
0.4
0.5
0.1
–1.1
–55°C
125°C
25°C
–55°C
125°C
25°C
RL = 1k ±1.8V V
S
±9V
UW
Y
PICA
100
80
60
40
LPER
F
O
R
AT
CCHARA TERIST
E
C
ICS
Open-Loop Voltage Gain vs Gain Bandwidth Product vs
Gain, Phase vs Frequency Load Resistance Supply Voltage
PHASE
GAIN
VS = ±5V
= 25°C
T
A
= 1k
R
L
100
80
60
40
30
VS = ±5V V
O
T
PHASE MARGIN (DEG)
A
20
= ±3V = 25°C
20
0
–20
100k
1M 10M 100M
FREQUENCY (Hz)
LT1189 • TPC11
20
0
–20
10
OPEN-LOOP VOLTAGE GAIN (kV/V)
0
100
1k 10k
LOAD RESISTANCE ()
LT1189• TPC10
Gain Bandwidth Product and Common-Mode Rejection Ratio Phase Margin vs Temperature Output Impedance vs Frequency vs Frequency
250
200
GAIN BANDWIDTH 
PRODUCT
150
GAIN BANDWIDTH PRODUCT (MHz)
100
–25 25 75
–50
PHASE MARGIN
0 50 100 125
TEMPERATURE (°C)
V = ±5V
S
R = 1k
L
= 20dB
A
V
LT1189 • TPC13
85
75
65
55
100
VS = ±5V
= 25°C
T
A
A
= 10
PHASE MARGIN (DEG)
V
10
1
OUTPUT IMPEDANCE ( )
0.1 1k
10k 100k 1M 10M 100M
FREQUENCY (Hz)
LT1189 • TPC14
Power Supply Rejection Ratio vs Output Short Circuit Current vs Frequency Temperature ± Output Swing vs Supply Voltage
80
60
40
20
0
POWER SUPPLY REJECTION RATIO (dB)
–20
1k 100k 10M 100M
6
+PSRR –PSRR
10k 1M
FREQUENCY (Hz)
VS = ±5V
= 25°C
T
A
V
RIPPLE
 
= ±300mV
LT1189 • TPC16
36
35
34
33
32
31
OUTPUT SHORT CIRCUIT CURRENT (mA)
30
–50
–25 50 100
0 25 75 125
TEMPERATURE (°C)
VS = ±5V
LT1189 • TPC17
Page 7
Y
PICA
LPER
F
O
R
AT
UW
CCHARA TERIST
E
C
LT1189
ICS
Output Voltage Swing vs Load Resistance
5
VS = ±5V
3
1
–1
–3
OUTPUT VOLTAGE SWING (V)
–5
TA = –55°C
TA = 25°C
TA = –55°C
TA = 25°C
10
LOAD RESISTANCE ()
Output Voltage Step vs Settling Time, AV = 10
4
VS = ±5V
= 25°C
T
A
= 1k
R
L
2
0
–2
OUTPUT VOLTAGE STEP (V)
10mV
TA = 25°C
TA = 25°C
100 1000
LT1189 • TPC19
10mV
Slew Rate vs Temperature
300
–SLEW RATE
µ
250
SLEW RATE (V/ s)
VS = ±5V
= 1k
R
L
= ±2V
V
O
= 10
A
V
200
–50
–25 0 50 7525 100 125
TEMPERATURE (°C)
Harmonic Distortion vs Output Level
0
VS = ±5V
= 25°C
T
A
–10
= 1k
R
L
f = 10MHz
= 10
A
V
–20
–30
–40
DISTORTION (dBc)
–50
+SLEW RATE
LT1189 • TPC20
HD
HD
3
2
–4
100
180 220 260 300
140 340
SETTLING TIME (ns)
Large-Signal Transient Reponse
AV = 10, RL = 1k, +SR = 223V/µs, –SR = 232V/µs
LT1189 • TPC21
LT1189 • TPC23
–60
0
12
OUTPUT VOLTAGE (V
P-P
Small-Signal Transient Reponse
AV = 10, RL = 1k, tr = 9.40ns
3
)
LT1189 • TPC22
4
LT1189 • TPC24
7
Page 8
LT1189
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
The primary use of the LT1189 is in converting high speed differential signals to a single-ended output. The LT1189 video difference amplifier has two uncommitted high input impedance (+) and (–) inputs. The amplifier has another set of inputs which can be used for reference and feed­back. Additionally, this set of inputs give gain adjust, and DC control to the differential amplifier. The voltage gain of the LT1189 is set like a conventional operational amplifier. Feedback is applied to pin 8, and it is optimized for gains of 10 or greater. The amplifier can be operated single­ended by connecting either the (+) or (–) inputs to the +/REF (pin 1). The voltage gain is set by the resistors: (RFB + RG)/RG.
Like the single-ended case, the differential voltage gain is set by the external resistors: (RFB + RG)/RG. The maximum input differential signal for which the output will respond is approximately ±170mV.
S/D
+
V
5
3
V
IN
2 1
8
+ –
+/REF
–/FB
LT1189
V R
7
6
V
OUT
4
FB
V
S/D
+
V
5
3 2
IN
1 8
+ –
+/REF
–/FB
LT1189
V R
7
6
V
OUT
4
FB
Power Supply Bypassing
The LT1189 is quite tolerant of power supply bypassing. In some applications a 0.1µF ceramic disc capacitor placed 1/2 inch from the amplifier is all that is required. In applications requiring good settling time, it is important to use multiple bypass capacitors. A 0.1µF ceramic disc in parallel with a 4.7µF tantalum is recommended.
Calculating the Output Offset Voltage
Both input stages contribute to the output offset voltage at pin 6. The feedback correction forces balance in the input stages by introducing an Input VOS at pin 8. The complete expression for the output offset voltage is:
V
= ( VOS + IOS(RS) + IB(R
OUT
)) × (RFB + RG)/RG + IB(RFB)
REF
RS represents the input source resistance, typically 75, and R DC reference voltage, for V
represents finite source impedance from the
REF
grounded, R
REF
= 0 the
REF
IOS is normally a small contributor and the expression simplifies to:
V
= VOS(RFB + RG)/RG + IB(RFB)
OUT
If RFB is limited to 1k, the last term of the equation contributes only 2mV since IB is less than 2µA.
V
IN DIFF
8
+
R
R
G
FB
AV= +
R
G
S/D
5
3
+
2
LT1189
1
V
+/REF
IN
8
–/FB
VO= (V
R
G
R
G
+
V
7
6
V
OUT
4
V R
FB
+ VIN)
IN DIFF
V
V
IN
+
R
R
G
FB
R
G
IN DIFF
R
G
VO=
R
AV= –
G
S/D
5
3
+
2
LT1189
1
+/REF
8
–/FB
+
R
R
G
FB
(
R
G
V
V R
V
(
+
7
4
FB
IN DIFF
+
R
R
G
FB
R
G
6
R
FB
(
R
G
LT1189 • AI01
2
R
S
Q1 Q2
RE
300
345µA
+
V
OUT
3
+
R
S
V
IN
(
1
REF
R
REF
Q3 Q4
RE
300
350µA
7V
8
4V
+
R
R
G
LT1189 • AI02
6
FB
Figure 1. Simplified Input Stage Schematic
Page 9
LT1189
PPLICATI
A
U
O
S
I FOR ATIO
WU
U
Instrumentation Amplifier Rejects High Voltage
Instrumentation amplifiers are often used to process slowly varying outputs from transducers. With the LT1189 it is easy to make an instrumentation amplifier that can respond to rapidly varying signals. Attenuation resistors in front of the LT1189 allow very large common-mode signals to be rejected while maintaining good frequency response. The input common-mode and differential-mode signals are reduced by 100:1, while the closed-loop gain is set to be 100, thereby maintaining unity-gain input to output. The unique topology allows for frequency re­sponse boost by adding 150pF to pin 8 as shown.
3.5MHz Instrumentation Amplifier Rejects 120V
10k*
V
IN
V
CM
120V
P-P
* 0.1% RESISTORS WORST CASE CMRR = 48dB
Output of Instrumentation Amplifier with 1MHz Square Wave
10k*
Riding on 120V
100*
100*
150pF
100
at the Input
P-P
5V
2
+
1
REF
LT1189
3
8
FB
–5V
10k
P-P
7
6
4
LT1189 • AI03
High Voltage Instrumentation Amplifier Response
20
DIFFERENTIAL-MODE RESPONSE
0
–20
VOLTAGE GAIN (dB)
–40
–60
COMMON-MODE RESPONSE
FREQUENCY (Hz)
LT1189 • AI05
100M10M1M100k
Operating with Low Closed-Loop Gain
The LT1189 has been optimized for closed-loop gains of 10 or greater. The amplifier can be operated at much lower closed-loop gains with the aid of a capacitor CFB across the feedback resistor, (feedback zero). This capacitor lowers the closed-loop 3dB bandwidth. The bandwidth cannot be made arbitrarily low because CFB is a short at high frequency and the amplifier will appear configured unity-gain. As an approximate guideline, make BW × A
VCL
= 200MHz. This expression expands to:
A
VCL
2
π
RC
()()
FB FB
200
=
MHz
or:
A
C
=
FB
200 2π
()()()
VCL
MHz R
FB
LT1189 • AI04
The effect of the feedback zero on the transient and frequency response is shown for AV = 4.
9
Page 10
LT1189
PPLICATI
A
U
O
S
I FOR ATIO
WU
Closed-Loop Voltage Gain vs Frequency
30
20
10
0
VS = ±5V
= 25°C
T
A
= 4
A
–10
V
= 900
R
CLOSED-LOOP VOLTAGE GAIN (dB)
–20
FB
R
G
= 300
FREQUENCY (Hz)
CFB = 0pF
CFB = 5pF
100M10M1M100k
LT1189 • AI06
Small-Signal Transient Response
U
Reducing the Closed-Loop Bandwidth
Although it is possible to reduce the closed-loop band­width by using a feedback zero, instability can occur if the bandwidth is made too low. An alternate technique is to do differential filtering at the input of the amplifier. This technique filters the differential input signal, and the differential noise, but does not filter common-mode noise. Common-mode noise is rejected by the LT1189’s CMRR.
10MHz Bandwidth Limited Amplifier
R1
110
SIG
eN
D
eN
CM
C1
68pF
R2
110
3 2
1 8
100
+ –
REF FB
5V
7
LT1189
4
–5V
909
6
A
f
V
V
–3dB
OUT
= 10
V
OUT
1
=
2π(R1 + R2)C1
SIG + eN
=
FILTER
D
eN
CM
+
CMR
LT1189 • AI09
AV = 4, RFB = 910, RG = 300
Small-Signal Transient Response
AV = 4, RFB = 910, RG = 300, CFB = 5pF
LT1189 • AI07
LT1189 • AI08
Using the Shutdown Feature
The LT1189 has a unique feature that allows the amplifier to be shutdown for conserving power, or for multiplexing several amplifiers onto a common cable. The amplifier will shutdown by taking pin 5 to V–. In shutdown, the amplifier dissipates 15mW while maintaining a true high impedance output state of about 20k in parallel with the feedback resistors. For MUX applications, the amplifiers may be configured inverting, non-inverting, or differential. When the output is loaded with as little as 1k from the amplifier’s feedback resistors, the amplifier shuts off in 600ns. This shutoff can be under the control of HC CMOS operating between 0V and –5V.
10
Page 11
LT1189
PPLICATI
A
1MHz Sine Wave Gated Off with Shutdown Pin
SHUTDOWN
V
OUT
AV = 10, RFB = 900, RG = 100
A
U
O
S
I FOR ATIO
WU
U
The ability to maintain shutoff is shown on the curve Shut down Supply Current vs Temperature in the Typical Per­formance Characteristics section. At very high elevated temperature it is important to hold the shutdown pin close to the negative supply to keep the supply current from increasing.
LT1189 • AI10
U
O
PPLICATITYPICAL
Differential Receiver MUX for Power Down Applications
CABLE 1
CABLE 2
15k
15k
1.5k
CMOS IN
CHANNEL SELECT
1k
15k
1.5k
15k
1.5k
1.5k
3
+
2
1
V
REF
DC
8
FB
1k
100
74HC04 74HC04
1k
3
+
2
1
V
REF
DC
8
FB
100
LT1189
5
5
LT1189
1k
5V
–5V
5V
–5V
7
6
4
V
OUT
–5V
7
6
4
1% RESISTORS WORST CASE CMRR = 28dB TYPICALLY 35dB 
LT1189 • TA03
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
Page 12
LT1189
+
OUT
V
BIAS
V
LT1189 • SS
BIAS
V
M
C
FF
C
+V+V
3
2
5
1
+/REF
S/D
6
*
V
7
+
V
4
* SUBSTRATE DIODE, DO NOT FORWARD BIAS
8
–/FB
E
W
A
W
SPL
I
IIFED S
CH
PACKAGEDESCRIPTI
0.290 – 0.320
(7.366 – 8.128)
J8 Package
8-Lead Hermetic DIP
0.008 – 0.018
(0.203 – 0.460)
0.385 ± 0.025
(9.779 ± 0.635)
0.300 – 0.320
(7.620 – 8.128)
TI
O
C
U
Dimensions in inches (millimeters) unless otherwise noted.
0.200
0.015 – 0.060
0.100 ± 0.010
(5.080)
MAX
0.125
3.175 MIN
0° – 15°
CORNER LEADS OPTION 
(4 PLCS)
0.023 – 0.045 (0.58 – 1.14)
HALF LEAD
OPTION
0.045 – 0.065 (1.14 – 1.65)
FULL LEAD
OPTION
0.045 – 0.065 (1.14 – 1.65)
0.014 – 0.026
(0.360 – 0.660)
0.045 – 0.065
(1.143 – 1.651)
(0.381 – 1.524)
(2.540 ± 0.254)
0.130 ± 0.005
(3.302 ± 0.127)
0.005
(0.127)
MIN
0.025
(0.635)
RAD TYP
0.405
(10.287)
MAX
0.400
(10.160)
MAX
65
3
87
12
876
4
5
0.220 – 0.310
(5.588 – 7.874)
× 45°
0.008 – 0.010
(0.203 – 0.254)
0.065
(1.651)
TYP
0.045 ± 0.015
(1.143 ± 0.381)
0.100 ± 0.010
(2.540 ± 0.254)
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
0.125
(3.175)
MIN
0.018 ± 0.003
(0.457 ± 0.076)
(1.270)
0.004 – 0.010
(0.101 – 0.254)
0.050
BSC
0.020
(0.508)
MIN
0.228 – 0.244
(5.791 – 6.197)
1234
0.189 – 0.197
(4.801 – 5.004)
7
8
1
2
5
6
3
4
0.250 ± 0.010
(6.350 ± 0.254)
0.150 – 0.157
(3.810 – 3.988)
N8 Package
8-Lead Plastic DIP
S8 Package
8-Lead Plastic SOIC
0.009 – 0.015
(0.229 – 0.381)
+0.025
0.325 –0.015
+0.635
8.255
()
–0.381
0.010 – 0.020
(0.254 – 0.508)
0°– 8° TYP
0.016 – 0.050
0.406 – 1.270
Linear Technology Corporation
12
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900
FAX
: (408) 434-0507
TELEX
: 499-3977
LINEAR TECHNOLOGY CORPORATION 1993
BA/LT/GP 0293 10K REV 0
Loading...