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TOPLED® RG LS T770, LO T770, LY T770
LG T770, LP T770
Besondere Merkmale
● Gehäusefarbe: weiß
● als optischer Indikator einsetzbar
● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
● für alle SMT-Bestück- und Löttechniken geeignet
● gegurtet (12-mm-Filmgurt)
● Störimpulsfest nach DIN 40839
Features
● color of package: white
● for use as optical indicator
● for backlighting, optical coupling into light pipes and lenses
● suitable for all SMT assembly and soldering methods
● available taped on reel (12 mm tape)
● load dump resistant acc. to DIN 40839
VPL06899
Semiconductor Group 1 11.96
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LS T770, LO T770, LY T770
LG T770, LP T770
Typ
Type
LS T770-HK
LS T770-J
LS T770-K
LS T770-JL
LO T770-HK
LO T770-J
LO T770-K
LO T770-JL
LY T770-HL
LY T770-J
LY T770-K
LY T770-L
LY T770-JM
Emissionsfarbe
Farbe der
Lichtaustritts-
Lichtstärke
fläche
Color of
Emission
Color of the
Light Emitting
Area
Luminous
Intensity
I
= 10 mA
F
I
(mcd)
V
super-red colorless clear 2.5 ... 12.5
4.0 ... 8.0
6.3 ... 12.5
4.0 ... 20.0
orange colorless clear 2.5 ... 12.5
4.0 ... 8.0
6.3 ... 12.5
4.0 ... 20.0
yellow colorless clear 2.5 ... 20.0
4.0 ... 8.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
Lichtstrom
Luminous
Flux
I
= 10 mA
F
ΦV (mlm)
18 (typ.)
30 (typ.)
-
18 (typ.)
30 (typ.)
-
18 (typ.)
30 (typ.)
45 (typ.)
-
Bestellnummer
Ordering Code
Q62703-Q2726
Q62703-Q2727
Q62703-Q2728
Q62703-Q2729
Q62703-Q2730
Q62703-Q2731
Q62703-Q2732
Q62703-Q2733
Q62703-Q2734
Q62703-Q2736
Q62703-Q3241
Q62703-Q3906
Q62703-Q2737
LG T770-HL
LG T770-J
LG T770-K
LG T770-L
LG T770-JM
LP T770-FJ
LP T770-G
LP T770-H
LP T770-GK
green colorless clear 2.5 ... 20.0
4.0 ... 8.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
pure green colorless clear 1.0 ... 8.0
1.6 ... 3.2
2.5 ... 5.0
1.6 ... 12.5
Streuung der Lichtstärke in einer Verpackungseinheit I
Luminous intensity ratio in one packaging unit I
V max
/ I
V max
V min
/ I
V min
≤ 2.0.
18 (typ.)
30 (typ.)
45 (typ.)
-
8 (typ.)
12 (typ.)
-
≤ 2.0.
Q62703-Q2738
Q62703-Q2739
Q62703-Q2740
Q62703-Q3100
Q62703-Q2741
Q62703-Q2742
Q62703-Q2743
Q62703-Q2744
Q62703-Q2745
Semiconductor Group 2
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Grenzwerte
Maximum Ratings
LS T770, LO T770, LY T770
LG T770, LP T770
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
Sperrspanung
Reverse voltage
Verlustleistung
Power dissipation
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
)
*
Montage auf PC-board
mounted on PC board*)(pad size ≥ 16 mm2 each)
(Padgröße je ≥ 16 mm2)
Symbol
Symbol
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
Werte
Values
Einheit
Unit
– 55 ... + 100 ˚C
– 55 ... + 100 ˚C
+ 100 ˚C
30 mA
0.5 A
5V
100 mW
400 K/W
*)PC-board: FR4
Semiconductor Group 3
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Kennwerte (TA = 25 ˚C)
Characteristics
LS T770, LO T770, LY T770
LG T770, LP T770
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
I
= 10 mA
F
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
I
= 10 mA
F
Spektrale Bandbreite bei 50 %
Spectral bandwidth at 50 % I
I
= 10 mA
F
Abstrahlwinkel bei 50 %
Viewing angle at 50 % I
I
v
I
rel max
rel max
(Vollwinkel)
v
(typ.)
(typ.)
Durchlaßspannung (typ.)
Forward voltage (max.)
I
= 10 mA
F
Sperrstrom (typ.)
Reverse current (max.)
V
= 5 V
R
Kapazität (typ.)
Capacitance
V
= 0 V, f = 1 MHz
R
Schaltzeiten:
Switching times:
I
from 10 % to 90 % (typ.)
V
I
from 90 % to 10 % (typ.)
V
I
= 100 mA, tp = 10 µs, RL= 50 Ω
F
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LO LY LG LP
λ
λ
peak
dom
635 610 586 565 557 nm
628 605 590 570 560 nm
∆λ 45 40 45 25 22 nm
2ϕ 120 120 120 120 120 Grad
deg.
V
V
I
I
C
t
t
F
F
R
R
0
r
f
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6VV
0.01100.01100.01100.01100.0110µA
µA
128 101515pF
300
150
300
150
300
150
450
200
450
200nsns
Semiconductor Group 4
Page 5
LS T770, LO T770, LY T770
LG T770, LP T770
Relative spektrale Emission I
= f (λ), TA= 25 ˚C, IF= 10 mA
rel
Relative spectral emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik I
Radiation characteristic
= f (ϕ)
rel
Semiconductor Group 5
Page 6
LS T770, LO T770, LY T770
LG T770, LP T770
Durchlaßstrom IF = f (VF)
Forward current
T
= 25 ˚C
A
Relative Lichtstärke IV/I
V(10 mA)
Relative luminous intensity
T
= 25 ˚C
A
= f (IF)
Zulässige Impulsbelastbarkeit
I
= f (tp)
F
Permissible pulse handling capability
Duty cycle D = parameter, TA = 25 ˚C
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
= f (TA)
F
Semiconductor Group 6
Page 7
LS T770, LO T770, LY T770
LG T770, LP T770
Wellenlänge der Strahlung λ
Wavelength at peak emission
I
= 10 mA
F
peak
= f (TA)
Dominantwellenlänge λ
Dominant wavelength
I
= 10 mA
F
dom
= f (TA)
Durchlaßspannung
Forward voltage
I
= 10 mA
F
V
= f (TA)
F
Relative Lichtstärke
I
/ I
V
V(25 ˚C )
Relative luminous intensity
I
= 10 mA
F
= f (TA)
Semiconductor Group 7
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LS T770, LO T770, LY T770
Maßzeichnung (Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
LG T770, LP T770
Kathodenkennung: abgeschrägte Ecke
Cathode mark: bevelled edge
GPL06899
Semiconductor Group 8
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