Datasheet LYS260-DO, LSS260-DO, LGS260-DO Datasheet (Siemens) [de, en]

Page 1
SOT-23 LED, Diffused LS S260, LY S260, LG S260
Besondere Merkmale
● eingefärbtes, diffuses Gehäuse
● extrem weitwinklig
● als optischer Indikator einsetzbar
● für alle SMT-Bestück- und Löttechniken geeignet
● gegurtet (8-mm-Filmgurt)
● Störimpulsfest nach DIN 40839
Features
● colored, diffused package
● extreme wide-angle LED
● for use as optical indicator
● suitable for all SMT assembly and soldering methods
● available taped on reel (8 mm tape)
● load dump resistant acc. to DIN 40839
VSO06723
Typ Type
Emissionsfarbe Color of Emission
Gehäusefarbe Color of Package
Lichtstärke Luminous Intensity
I
= 10 mA
F
I
(mcd)
V
Bestellnummer Ordering Code
LS S260-DO super-red red diffused ≥ 0.4 Q62703-Q1640 LY S260-DO yellow yellow diffused ≥ 0.4 Q62703-Q1657 LG S260-DO green green diffused ≥ 0.4 Q62703-Q1608
Streuung der Lichtstärke in einer Verpackungseinheit I Luminous intensity ratio in one packaging unit I
V max
V max
V min
/ I
V min
≤ 2.0.
≤ 2.0.
Semiconductor Group 1 1998-04-07
Page 2
Grenzwerte Maximum Ratings
LS S260, LY S260, LG S260
Bezeichnung Parameter
Betriebstemperatur Operating temperature range
Lagertemperatur Storage temperature range
Sperrschichttemperatur Junction temperature
Durchlaßstrom Forward current
Stoßstrom Surge current
t ≤ 10 µs, D = 0.005
Sperrspannung Reverse voltage
Verlustleistung Power dissipation
T
≤ 25 ˚C
A
Wärmewiderstand Thermal resistance Sperrschicht / Luft Junction / air
1)
Symbol Symbol
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
Werte Values
Einheit Unit
– 55 … + 100 ˚C
– 55 … + 100 ˚C
+ 100 ˚C
30 mA
0.5 A
5V
100 mW
750 K/W
1)
Auf Platine gelötet: Lötfläche 16 cm
1)
Soldered on PC board: pad size ≥ 16 cm
2
2
Semiconductor Group 2 1998-04-07
Page 3
Kennwerte (TA = 25 ˚C) Characteristics
LS S260, LY S260, LG S260
Bezeichnung Parameter
Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.)
I
= 20 mA
F
Dominantwellenlänge (typ.) Dominant wavelength (typ.)
I
= 20 mA
F
Spektrale Bandbreite bei 50 % I Spectral bandwidth at 50 % I
I
= 20 mA
F
rel max
rel max
(typ.) (typ.)
Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % I
V
Durchlaßspannung (typ.) Forward voltage (max.)
I
= 10 mA
F
Sperrstrom (typ.) Reverse current (max.)
V
= 5 V
R
Kapazität (typ.) Capacitance
V
= 0 V, f = 1 MHz
R
Schaltzeiten: Switching times:
I
from 10 % to 90 % (typ.)
V
I
from 90 % to 10 % (typ.)
V
I
= 100 mA, tP = 10 µs, RL = 50 Ω
F
Symbol Symbol
Werte
Values
Einheit Unit
LS LY LG
λ
peak
λ
dom
635 586 565 nm
628 590 570 nm
∆λ 45 45 25 nm
2ϕ 140 140 140 Grad
deg.
V V
I I
C
t t
F F
R R
0
r f
2.0
2.6
0.01 10
2.0
2.6
0.01 10
2.0
2.6
0.01 10
V V
µA µA
12 10 15 pF
300 150
300 150
450 200
ns ns
Semiconductor Group 3 1998-04-07
Page 4
LS S260, LY S260, LG S260
Relative spektrale Emission I
= f (λ), TA= 25 ˚C, IF= 20 mA
rel
Relative spectral emission
V (λ) = spektrale Augenempfindlichkeit
Standard eye response curve
100
%
Ι
rel
80
V
λ
60
40
blue
20
green
yellow
pure-green
orange
super-red
OHL01698
red
hyper-red
0
400 450 500 550 600 650 700
λ
Abstrahlcharakteristik I
= f (ϕ)
rel
Radiation characteristic
0102040 30
ϕ
1.0
50
60
70
80
0.8
0.6
0.4
0.2
nm
OHL01693
90
0
100
1.0 0.8 0.6 0.4
02040 60 80 100 120
Semiconductor Group 4 1998-04-07
Page 5
LS S260, LY S260, LG S260
Durchlaßstrom IF= f (VF) Forward current
T
= 25 ˚C
A
2
10
Ι
mA
F
1
10
5
0
10
5
-1
10
1.0 1.4 1.8 2.2 2.6 3.0 3.4
OHL01263
V
V
F
Relative Lichtstärke IV/I
V(10 mA)
Relative luminous intensity
T
= 25 ˚C
A
1
10
Ι
V
Ι
V
(10mA)
0
10
5
-1
10
5
green yellow super-red
55
10 10
10
10
-2
5
-3
10
-1 0
= f (IF)
OHL01632
12
mA
10
Ι
F
Zulässige Impulsbelastbarkeit IF= f (tP) Permissible pulse handling capability
Duty cycle D = parameter, TA= 25 ˚C
3
10
Ι
F
D
=
mA
t
D
P
T
=
0.005
t
P
0.01
0.02
0.05
0.1
2
0.2
10
5
0.5
DC
1
10
OHL01686
Ι
F
T
s10-510-410-310-210-110010
t
p
Maximal zulässiger Durchlaßstrom Max. permissible forward current
I
= f (TA)
F
80
Ι
F
mA
60
50
40
30
20
10
1
0
0 20 40 60 80 100
OHL01692
˚C
T
A
Semiconductor Group 5 1998-04-07
Page 6
LS S260, LY S260, LG S260
Wellenlänge der Strahlung Wavelength at peak emission
λ
= f (TA), IF= 20 mA
peak
690
λ
peak
nm
650
super-red
630
610
590
570
550
0 20 40 60 80 100
yellow
green
OHL01672
˚C
T
A
Dominantwellenlänge Dominant wavelength
λ
= f (TA), IF= 20 mA
dom
690
λ
dom
nm
650
630
610
590
570
550
0 20 40 60 80 100
super-red
yellow
green
OHL01673
˚C
T
A
Durchlaßspannung VF= f (TA) Forward voltage
I
= 10 mA
F
2.4
V
F
V
2.2
2.0
super-red, yellow
1.8
1.6
1.4 0 20 40 60 80 100
green
OHL01674
˚C
T
A
Relative Lichtstärke IV/I
V(25 °C)
Relative luminous intensity
I
= 10 mA
F
2.0
Ι
V
Ι
V
(25 ˚C)
1.6
1.2
0.8
super-red
0.4
0.0 0 20 40 60 80 100
= f (TA)
yellow green
OHL01675
˚C
T
A
Semiconductor Group 6 1998-04-07
Page 7
LS S260, LY S260, LG S260
Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified)
3.0
2.8
1.9
0.95
12
3
0.5
0.35
0.25
M
Approx. weight 0.01 g
Pin configuration LS, LY, LG
12
3
Cathode
B
C
Anode
B
C
A
0.15
0.08
2.6 max
2˚...30˚
A M
0.2
10˚ max
10˚ max
0.1 max
1.1 max
GSO06723
1.4
1.2
Anschlußbelegung: (Draufsicht) Pin configuration: (top view)
GSO06723
Semiconductor Group 7 1998-04-07
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