Datasheet LYA679-CO, LSA679-CO, LGA679-CO Datasheet (Siemens)

LC SIDELED

®

LS A679, LY A679, LG A679

Low Current LED

Besondere Merkmale

● Gehäusefarbe: weiß

● als optischer Indikator einsetzbar

● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung

● für alle SMT-Bestück- und Reflow-Löttechniken geeignet

● gegurtet (12-mm-Filmgurt)

Features

● color of package: white

● for use as optical indicator

● for backlighting, optical coupling into light pipes and lenses

● suitable for all SMT assembly and reflow soldering methods

● available taped on reel (12 mm tape)

VPL06880

Typ

Emissionsfarbe

Farbe der Lichtaustritts-

Lichtstärke

fläche

Type

Color of Emission

Color of the Light Emitting Area

Luminous Intensity

I

= 2 mA

F

I

(mcd)

V

LS A679-CO super-red colorless clear ≥ 0.25

(1.0 typ.)

LY A679-CO yellow colorless clear ≥ 0.25

(1.0 typ.)

LG A679-CO green colorless clear ≥ 0.25

(1.0 typ.)

Streuung der Lichtstärke in einer Verpackungseinheit I Luminous intensity ratio in one packaging unit I

V max

/ I

V max

V min

Lichtstrom

Luminous

Bestellnummer

Ordering Code

Flux

I

= 2 mA

F

ΦV(mlm)

3.0 (typ.) Q62703-Q2551

3.0 (typ.) Q62703-Q2554

3.0 (typ.) Q62703-Q2545

/ I

V min

≤ 2.0.

Semiconductor Group 1 1998-11-12

Grenzwerte Maximum Ratings

LS A679, LY A679, LG A679

Bezeichnung Parameter

Betriebstemperatur Operating temperature range

Lagertemperatur Storage temperature range

Sperrschichttemperatur Junction temperature

Durchlaßstrom Forward current

Stoßstrom Surge current

t ≤ 10 µs, D = 0.005

Sperrspannung Reverse voltage

Verlustleistung Power dissipation

Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-Board (Padgröße ≥ 16 mm 2) mounted on PC board (pad size ≥ 16 mm 2)

Symbol Symbol

T

op

T

stg

T

j

I

F

I

FM

V

R

P

tot

R

th JA

Werte Values

Einheit Unit

– 55 ... + 100 ˚C

+ 100 ˚C

7.5 mA

0.15 A

5V

20 mW

500 K/W

Semiconductor Group 2 1998-11-12

Kennwerte (TA = 25 °C) Characteristics

LS A679, LY A679, LG A679

Bezeichnung Parameter

Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.)

I

= 7.5 mA

F

Dominantwellenlänge (typ.) Dominant wavelength (typ.)

I

= 7.5 mA

F

Spektrale Bandbreite bei 50 % I Spectral bandwidth at 50 % I

I

= 7.5 mA

F

rel max

(typ.)

Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % I

V

Durchlaßspannung (typ.) Forward voltage (max.)

I

= 2 mA

F

Sperrstrom (typ.) Reverse current (max.)

V

= 5 V

R

Kapazität (typ.) Capacitance

V

= 0 V, f = 1 MHz

R

Schaltzeiten: Switching times:

I

from 10 % to 90 % (typ.)

V

I

from 90 % to 10 % (typ.)

V

I

= 100 mA, tp = 10 µs, RL = 50 Ω

F

Symbol Symbol

Werte

Values

Einheit Unit

LS LY LG

λ

peak

dom

635 586 565 nm

628 590 570 nm

∆λ 45 45 25 nm

2ϕ 120 120 120 Grad

deg.

V V

I I

C

t t

F F

R R

0

r f

1.8

2.6

0.01 10

2.0

2.7

0.01 10

1.9

2.6

0.01 10

V V

µA µA

3315pF

200 150

450 200

ns ns

Semiconductor Group 3 1998-11-12

LS A679, LY A679, LG A679

Relative spektrale Emission I

= f (λ), TA = 25 ˚C, IF= 7.5 mA

rel

Relative spectral emission

V (λ) = spektrale Augenempfindlichkeit

Standard eye response curve

100

%

Ι

rel

80

60

40

blue

20

OHL01698

V

λ

red

orange

green

yellow

pure-green

super-red

hyper-red

0

400 450 500 550 600 650 700

Abstrahlcharakteristik I Radiation characteristic

50˚

60˚

70˚

80˚

= f (ϕ)

rel

nm

λ

0˚10˚20˚40˚ 30˚

ϕ

1.0

OHL01660

0.8

0.6

0.4

0.2

90˚

0

100˚

1.0 0.8 0.6 0.4

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Semiconductor Group 4 1998-11-12

LS A679, LY A679, LG A679

Durchlaßstrom IF = f (VF) Forward current

T

= 25 ˚C

A

2

10

Ι

F

mA

1

10

5

10

5

10

super-red

green

0

-1

1.0 1.4 1.8 2.2 2.6 3.0 3.4

yellow

OHL01208

V

F

Relative Lichtstärke IV / I

V(2 mA)

Relative luminous intensity

T

= 25 ˚C

A

1

10

Ι

V

Ι

(2mA)

V

0

10

5

-1

10

5

-2

5

-3

10

-1 0

green yellow super-red

55

10 10

= f (IF)

OHL01207

12

mA

10

Ι

F

Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability

Duty cycle D = parameter, TA = 25 ˚C

3

10

t

Ι

F

mA

10

2

D

=

D

=

0.005

0.01

0.02

t

P

T

0.05

5

0.1

0.2

0.5

1

10

DC

5

0

10

OHL01278

t

p

Ι

F

s10-510-410-310-210-110010

Maximal zulässiger Durchlaßstrom IF = f (TA) Max. permissible forward current

8

Ι

F

mA

6

5

4

3

2

1

0

0 20 40 60 80 100

OHL01193

˚C

T

A

Semiconductor Group 5 1998-11-12

LS A679, LY A679, LG A679

Wellenlänge der Stahlung λ

peak

Wavelength at peak emission

I

= 7.5 mA

F

690

λ

peak

nm

650

super-red

630

610

590

570

550

0 20 40 60 80 100

yellow

green

= f (TA)

OHL01672

˚C

T

Dominantwellenlänge λ

= f (TA)

dom

Dominant wavelength

I

= 7.5 mA

F

690

λ

dom

nm

650

super-red

630

610

590

yellow

green

570

550

0 20 40 60 80 100

A

OHL01673

˚C

T

A

Durchlaßspannung VF = f (TA) Forward voltage

I

= 2 mA

F

2.4

V

F

V

2.2

2.0 yellow

green

1.8

super-red

1.6

1.4

0 20 40 60 80 100

OHL01750

˚C

T

A

Relative Lichtstärke IV / I

V(25 ˚C)

Relative luminous intensity

I

= 2 mA

F

2.0

Ι

V

Ι

V

(25 ˚C)

1.6

1.2

0.8

super-red

0.4

0.0 0 20 40 60 80 100

= f (TA)

yellow green

OHL01675

˚C

T

A

Semiconductor Group 6 1998-11-12

LS A679, LY A679, LG A679

Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified)

(2.4)

4.2

3.8

2.8

2.4

0.7

2.54

Cathode

Cathode marking

(2.9)

spacing

(1.4)

(R1)

4.2

3.8

Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge

1.1

0.9

Anode

(0.3)

3.8

(2.85)

3.4

GPL06880

Semiconductor Group 7 1998-11-12