Datasheet LYA670-L, LYA670-K, LYA670-JM, LYA670-J, LYA670-HK Datasheet (Siemens)

SIDELED

®

Besondere Merkmale

● Gehäusefarbe: weiß

● als optischer Indikator einsetzbar

● zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung

● für alle SMT-Bestück- und Reflow-Löttechniken geeignet

● gegurtet (12-mm-Filmgurt)

● Störimpulsfest nach DIN 40839

Features

LS A670, LO A670, LY A670

LG A670, LP A670

● color of package: white

● for use as optical indicator

● for backlighting, optical coupling into light pipes and lenses

● suitable for all SMT assembly and reflow soldering methods

● available taped on reel (12 mm tape)

● load dump resistant acc. to DIN 40839

VPL06880

Semiconductor Group 1 1998-11-12

LS A670, LO A670, LY A670

LG A670, LP A670

Typ

Type

LS A670-HL LS A670-J LS A670-K LS A670-L LS A670-JM

LO A670-HK LO A670-J LO A670-K LO A670-L LO A670-JM

LY A670-HK LY A670-J LY A670-K LY A670-L LY A670-JM

Emissionsfarbe

Farbe der Lichtaustritts-

Lichtstärke

fläche Color of Emission

Color of the

Light Emitting

Area

Luminous Intensity

I

= 10 mA

F

I

(mcd)

V

super-red colorless clear 2.5 ... 20.0

4.0 ... 8.0

6.3 ... 12.5

10.0 ... 20.0

4.0 ... 32.0

orange colorless clear 2.5 ... 12.5

4.0 ... 8.0

6.3 ... 12.5

10.0 ... 20.0

4.0 ... 32.0

yellow colorless clear 2.5 ... 12.5

4.0 ... 8.0

6.3 ... 12.5

10.0 ... 20.0

4.0 ... 32.0

Lichtstrom

Luminous Flux

I

= 10 mA

F

ΦV (mlm)

18 (typ.) 30 (typ.) 45 (typ.)

-

18 (typ.) 30 (typ.) 45 (typ.)

-

18 (typ.) 30 (typ.) 45 (typ.)

-

Bestellnummer

Ordering Code

Q62703-Q3908 Q62703-Q2833 Q62703-Q2834 Q62703-Q3840 Q62703-Q2835

Q62703-Q2547 Q62703-Q2837 Q62703-Q3204 Q62703-Q2836 Q62703-Q2838

Q62703-Q2552 Q62703-Q2839 Q62703-Q2840 Q62703-Q3920 Q62703-Q2841

LG A670-HK LG A670-J LG A670-K LG A670-L LG A670-JM

LP A670-FJ LP A670-G LP A670-H LP A670-J LP A670-GK

green colorless clear 2.5 ... 12.5

4.0 ... 8.0

6.3 ... 12.5

10.0 ... 20.0

4.0 ... 32.0

pure green colorless clear 1.0 ... 8.0

1.6 ... 3.2

2.5 ... 5.0

4.0 ... 8.0

1.6 ... 12.5

Streuung der Lichtstärke in einer Verpackungseinheit I Luminous intensity ratio in one packaging unit I

V max

/ I

V min

/ I

V min

≤ 2.0.

18 (typ.) 30 (typ.) 45 (typ.)

-

8 (typ.) 12 (typ.) 18 (typ.)

-

≤ 2.0.

Q62703-Q2543 Q62703-Q2842 Q62703-Q2843 Q62703-Q3192 Q62703-Q2844

Q62703-Q2549 Q62703-Q2845 Q62703-Q2846 Q62703-Q3214 Q62703-Q2847

Semiconductor Group 2 1998-11-12

Grenzwerte Maximum Ratings

LS A670, LO A670, LY A670

LG A670, LP A670

Bezeichnung Parameter

Betriebstemperatur Operating temperature range

Lagertemperatur Storage temperature range

Sperrschichttemperatur Junction temperature

Durchlaßstrom Forward current

Stoßstrom Surge current

t ≤ 10 µs, D = 0.005

Sperrspannung Reverse voltage

Verlustleistung Power dissipation

Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgröße je ≥ 16 mm2) mounted on PC board*) (pad size ≥ 16 mm2each)

Symbol Symbol

T

op

T

stg

T

j

I

F

I

FM

V

R

P

tot

R

th JA

Werte Values

Einheit Unit

– 55 ... + 100 ˚C

+ 100 ˚C

30 mA

0.5 A

5V

100 mW

430 K/W

)

*

PC-board: FR4

Semiconductor Group 3 1998-11-12

Kennwerte (TA = 25 ˚C) Characteristics

LS A670, LO A670, LY A670

LG A670, LP A670

Bezeichnung Parameter

Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.)

I

= 10 mA

F

Dominantwellenlänge (typ.) Dominant wavelength (typ.)

I

= 10 mA

F

Spektrale Bandbreite bei 50 % I Spectral bandwidth at 50 % I

I

= 10 mA

F

rel max

(typ.) (typ.)

Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % I

v

Durchlaßspannung (typ.) Forward voltage (max.)

I

= 10 mA

F

Sperrstrom (typ.) Reverse current (max.)

V

= 5 V

R

Kapazität (typ.) Capacitance

V

= 0 V, f = 1 MHz

R

Schaltzeiten: Switching times:

I

from 10 % to 90 % (typ.)

V

I

from 90 % to 10 % (typ.)

V

I

= 100 mA, tp = 10 µs, RL= 50 Ω

F

Symbol Symbol

Werte

Values

Einheit Unit

LS LO LY LG LP

λ

peak

dom

635 610 586 565 557 nm

628 605 590 570 560 nm

∆λ 45 40 45 25 22 nm

2ϕ 120 120 120 120 120 Grad

deg.

V V

I I

C

t t

F F

R R

0

r f

2.0

2.6

2.0

2.6

2.0

2.6

2.0

2.6

2.0

2.6VV

0.01100.01100.01100.01100.0110µA µA

128 101515pF

300 150

450 200

450 200nsns

Semiconductor Group 4 1998-11-12

LS A670, LO A670, LY A670

LG A670, LP A670

Relative spektrale Emission I

= f (λ), TA= 25 ˚C, IF= 10 mA

rel

Relative spectral emission

V(λ) = spektrale Augenempfindlichkeit

Standard eye response curve

100

%

Ι

rel

80

60

40

blue

20

OHL01698

V

λ

red

orange

green

yellow

pure-green

super-red

hyper-red

0

400 450 500 550 600 650 700

Abstrahlcharakteristik I Radiation characteristic

50˚

60˚

70˚

80˚

= f (ϕ)

rel

nm

λ

0˚10˚20˚40˚ 30˚

ϕ

1.0

OHL01660

0.8

0.6

0.4

0.2

90˚

0

100˚

1.0 0.8 0.6 0.4

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Semiconductor Group 5 1998-11-12

LS A670, LO A670, LY A670

LG A670, LP A670

Durchlaßstrom IF = f (VF) Forward current

T

= 25 ˚C

A

2

10

Ι

F

mA

1

10

5

0

10

5

-1

10

1.0 1.4 1.8 2.2 2.6 3.0 3.4

pure-green

super-red orange/yellow green

OHL02145

V

Relative Lichtstärke IV/I

V(10 mA)

Relative luminous intensity

T

= 25 ˚C

A

1

10

Ι

V

Ι

(10 mA)

V

0

10 5

-1

10

5

10

-2

5

-3

10

-1 0

green red yellow super-red orange pure-green

10 10

55

= f (IF)

OHL02146

12

mA

10

V

F

Zulässige ImpulsbelastbarkeitIF = f (tp) Permissible pulse handling capability

Duty cycle D = parameter, TA = 25 ˚C

3

10

Ι

F

D

=

mA

t

T

D

P

=

t

P

0.005

0.01

0.02

0.05

0.1

2

0.2

10

5

0.5

DC

OHL01686

T

Ι

F

Maximal zulässiger Durchlaßstrom Max. permissible forward current

I

= f (TA)

F

60

mA

Ι

F

OHL01661

50

40

30

20

10

1

10

t

s10-510-410-310-210-110010

p

1

0

100604020

800

˚C

T

A

Semiconductor Group 6 1998-11-12

LS A670, LO A670, LY A670

LG A670, LP A670

Wellenlänge der Strahlung λ Wavelength at peak emission

I

= 10 mA

F

690

λ

peak

nm

650

super-red

630

610

590

570

550

0 20 40 60 80 100

orange

yellow

green pure-green

peak

= f (TA)

OHL02104

˚C

Dominantwellenlänge λ Dominant wavelength

I

= 10 mA

F

690

λ

dom

nm

650

630

610

590

570

550

0 20 40 60 80 100

super-red

orange

yellow

green

pure-green

dom

= f (TA)

OHL02105

˚C

Durchlaßspannung VF = f (TA) Forward voltage

I

= 10 mA

F

2.4

V

F

V

2.2

2.0

super-red

1.8

1.6

orange yellow

T

A

OHL02106

green

pure-green

Relative Lichtstärke IV/ I

V(25 ˚C )

Relative luminous intensity

I

= 10 mA

F

2.0

Ι

V

Ι

(25 ˚C)

V

1.6

1.2

0.8

0.4

orange super-red

pure-green

= f (TA)

yellow green

T

A

OHL02150

1.4 0 20 40 60 80 100

˚C

T

A

0.0 020406080100

T

˚C

A

Semiconductor Group 7 1998-11-12

LS A670, LO A670, LY A670

Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified)

(2.4)

4.2

3.8

2.8

2.4

0.7

LG A670, LP A670

2.54

Cathode

Cathode marking

(2.9)

spacing

(1.4)

(R1)

4.2

3.8

Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge

1.1

0.9

Anode

(0.3)

3.8

(2.85)

3.4

GPL06880

Semiconductor Group 8 1998-11-12