Datasheet LS5912C, LS5912, LS5911 Datasheet (Linear Integrated System Linear Systems)

Linear Integrated Systems

FEATURES

HIGH TRANSCONDUCTANCE
THROUGH 100MHz gfs>4000µmho

LOW INPUT CAPACITANCE C
SECOND SOURCE ALTERNATIVE TO INTERSIL, NATIONAL, SILICONIX

DIRECT PLUG IN REPLACEMENT

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature -65° to +150°C
Operating Junction Temperature +150°C

Maximum Voltage and Current for Each Transistor NOTE 1

-V

-V

-I

GSS
DSO

G(f)

Gate Voltage to Drain or Source 35V
Drain to Source Voltage 30V
Gate Forward Current 50mA

Maximum Power Dissipation

Device Dissipation @ Free Air - Total 500mW @ +125°C

=5pf max.

ISS

LS5911 LS5912 LS5912C

WIDEBAND HIGH GAIN

MONOLITHIC DUAL

D1

G1 S1

S2 G2

24 X 27 MILS

N-CHANNEL JFET

G1 S2

35

2 6

D1 D2

1 7

S1 G2

D2

BOTTOM VIEW

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS5911 LS5912 LS5912C UNITS CONDITIONS

∆|V

GS1-VGS2|

/∆T Drift vs. Temperature 20 40 40 MAX. µV/°CVDG= 10V ID= 5mA

TA= -55°C to +125°C

|V

GS1-VGS2

| Offset Voltage 10 15 40 MAX. mV VDG= 10V ID= 5mA

SYMBOL CHARACTERISTICS MIN. MAX. UNITS CONDITIONS

BV

g
g

|g

GSS

fs
fs

| Transconductance Ratio 0.95 1 % f=1kHz NOTE 2

fs1/gfs2

Gate-Source Breakdown Voltage 25 -- V IG= -1µAVDS= 0

TRANSCONDUCTANCE

Common-Source Forward 4000 10,000 µmho VDG= 10V ID= 5mA f= 1kHz
Common-Source Forward 4000 10,000 µmho f= 100MHz

DRAIN CURRENT

I

DSS

|I

DSS1/IDSS2

Saturation Drain Current 7 40 mA VDS= 10V VGS= 0 V

| Saturation Drain Current Ratio 0.95 1 % NOTE 2

GATE VOLTAGE

V

(off) or VPPinchoff Voltage 1 5 V VDS= 10V ID= 1nA

GS

V

GS

Gate-Source Voltage 0.3 4 V VDG= 10V ID= 5mA

GATE CURRENT

-I

-I
|I

-I

-I

G
G

| Differential Gate Current -- 20 nA

G1-IG2

GSS
GSS

Operating -- 50 pA VDG= 10V ID= 5mA
High Temperature -- 50 nA VDG= 10V ID= 5mA TA= +125°C

At Full Conduction -- 50 pA VDG= 15V VDS= 0
High Temperature -- 200 nA TA= +125°C

Linear Integrated Systems

4042 Clipper Court, Fremont, CA 94538 • TEL: [phone] • FAX: [phone]

SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS

S1 1

2
3
45

6

7

8

D1
SS
G1

S2

G2
SS

D2

P-DIP

A

OUTPUT CONDUCTANCE

Common-Source Output Conductance -- -- 100 µmho VDG= 10V ID= 5mA f= 1kHz

G

OS

G

OS

Common-Source Output Conductance -- -- 150 µmho f= 100MHz

NOISE

NF Figure -- -- 1 dB V

e

n

Voltage -- -- 20 nV/√Hz VDG= 10V ID= 5mA f= 10KHz

= 10V ID= 5mA RG= 100kΩ

DG

f= 10kHz

CAPACITANCE

C
C

ISS
RSS

Input -- -- 5 pF VDG= 10V ID= 5mA f= 1MHz
Reverse Transfer -- -- 1.2 pF

0.195

0.175

6 LEADS

0.019

0.016

45°

0.046

0.036

TO-71

Six Lead

DIA.

0.030
MAX.

DIA.

0.100

TO-78

0.230

DIA.

0.209

0.150

0.115

0.500 MIN.

0.050

3

2

4

5

1

8

6

7

0.048

0.028

S1

D1
SS
G1

0.016

0.019
DIM. A

0.016

0.021
DIM. B

0.029

0.045

45°

1
2
3
45

A

G2

8

SS

7
6

D2
S2

0.305

0.335

0.200

3

2

1

8

7

0.028

0.034

SOIC

0.335

0.370

4

5

6

MAX.

0.040

MIN. 0.500

SEATING

PLANE

0.100

0.100

0.188

0.197

0.165

0.185

0.150

0.158

(4.78)
(5.00)

0.320

0.290

0.405

(10.29)

MAX

(3.81)
(4.01)

S1 1

2

D1
G1

3

B

45

N/C

(5.79)

0.228

(6.20)

0.244

(8.13)
(7.37)

S1 1
D1

G1

N/C

8

N/C
G2

7

D2

6

S2

N/C

8

2

B

3
45

G2

7
6

D2
S2

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.

2. Assumes smaller value in numerator.

Linear Integrated Systems

4042 Clipper Court, Fremont, CA 94538 • TEL: [phone] • FAX: [phone]